CN113938121A - IGBT drive circuit - Google Patents
IGBT drive circuit Download PDFInfo
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- CN113938121A CN113938121A CN202111269096.8A CN202111269096A CN113938121A CN 113938121 A CN113938121 A CN 113938121A CN 202111269096 A CN202111269096 A CN 202111269096A CN 113938121 A CN113938121 A CN 113938121A
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- igbt
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- gate driving
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- 239000003990 capacitor Substances 0.000 claims description 9
- 230000001052 transient effect Effects 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 8
- 238000011161 development Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000001629 suppression Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/0406—Modifications for accelerating switching in composite switches
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Abstract
The application discloses IGBT drive circuit for drive turn-on and turn-off of IGBT. The IGBT driving circuit comprises a gate driving unit, a gate driving resistor and a driving control unit, wherein one end of the gate driving resistor is electrically connected with the gate of the IGBT, the other end of the gate driving resistor is electrically connected with the gate driving unit, and the driving control unit is connected to two ends of the gate driving resistor in parallel and used for controlling the turn-on and turn-off speed of the IGBT. The application has the advantages of simple structure, obvious effect and easiness in implementation, thereby reducing the development cost.
Description
Technical Field
The application relates to an IGBT drive circuit.
Background
With the wide application of the IGBT driver in the hot door industries such as photovoltaic, wind power generation, frequency conversion, electric vehicles, etc., the multilevel driving technology becomes one of the important research and development directions of the industry, and some technical difficulties are inevitably encountered in the research and development process, for example, the problem that the stress of the three-level inner tube is large is reduced by increasing the gate resistance, but the switching delay is increased at the same time, so that the dead time is increased by the controller to avoid the direct connection.
In the prior art, the switch delay can be prevented from being increased under the condition of reducing stress through the multi-stage turn-off circuit design; however, this method makes the structure of the driving circuit complicated and increases the design cost.
Disclosure of Invention
Therefore, it is desirable to provide an IGBT driving circuit that can reduce stress and switching delay, and has a simple circuit structure and low development cost.
The technical scheme proposed by the application for achieving the purpose is as follows:
the IGBT driving circuit comprises a gate driving unit, a gate driving resistor and a driving control unit, wherein one end of the gate driving resistor is electrically connected with a gate of the IGBT, the other end of the gate driving resistor is electrically connected with the gate driving unit, and the driving control unit is connected with two ends of the gate driving resistor in parallel and used for controlling the turn-on and turn-off speed of the IGBT.
Further, the driving control unit is a capacitor or a transient voltage suppression diode.
According to the IGBT driving circuit, the driving control units such as the capacitance or the transient voltage suppression diode are connected to the two ends of the gate resistor in parallel, so that the effect of accelerating on or accelerating off is achieved when the IGBT is turned on or turned off, the switching time delay and the electrical stress are reduced through the simplest circuit structure, and the function of multi-stage switching is achieved.
Drawings
Fig. 1 is a block diagram of a preferred embodiment of an IGBT driver circuit provided in the present application.
Fig. 2 is a circuit diagram of embodiment 1 of the IGBT driver circuit provided in the present application.
Fig. 3 is a schematic diagram of a test effect according to an embodiment of the present disclosure.
Fig. 4 is a circuit diagram of embodiment 2 of the IGBT drive circuit provided in the present application.
Description of the main elements
Gate resistance RG
Triode Q1, Q2
Capacitor C
Transient voltage suppression diode D
The following detailed description will further illustrate the present application in conjunction with the above-described figures.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
Referring to fig. 1, the present application provides an IGBT driving circuit for driving an IGBT to turn on and off. IGBT drive circuit includes gate drive unit (1), gate Resistance (RG) and drive control unit (2), the one end of gate Resistance (RG) is connected with IGBT's gate pole electricity, the other end of gate Resistance (RG) with gate drive unit (1) electricity is connected, drive control unit (2) parallel connection in the both ends of gate Resistance (RG) for the speed of opening and shutting down of control IGBT.
Example 1
Referring to fig. 2, fig. 2 is a circuit diagram of an embodiment of the present application. The gate driving unit (1) comprises a triode (Q1) and a triode (Q2). The triode (Q1) and the triode (Q2) form a push-pull amplifying circuit which is used for amplifying the driving signal. The base electrode of the triode (Q1) is electrically connected with the base electrode of the triode (Q2) and is used for receiving a driving signal input by a superior circuit. And the emitter of the triode (Q1) is electrically connected with the emitter of the triode (Q2) and is used for outputting a push-pull amplified driving signal, and the driving signal is transmitted to the grid of the IGBT through a gate Resistor (RG) so as to drive the IGBT to be switched on or switched off. The drive control unit (2) comprises a capacitor (C), wherein the capacitor (C) is connected to two ends of the gate Resistor (RG) in parallel and is used for playing an acceleration role when a drive signal changes from high to low (a turn-off process) or changes from low to high (a turn-on process). The collector of the triode (Q1) is connected with a power supply (V1), and the collector of the triode (Q2) is grounded.
Specifically, because the voltage at two ends of the capacitor cannot be suddenly changed, the potential at two ends of the capacitor (C) is zero at the moment of switching the switch of the driving circuit, two ends of the gate Resistance (RG) are equivalent to short circuit, the gate driving unit (1) drives the IGBT by the minimum gate resistance (IGBT internal resistance), the gate of the IGBT is quickly pulled down or pulled up, the effect of accelerating the switching speed of the IGBT is achieved, and then the gate resistance with the size of the gate Resistance (RG) is slowly recovered to drive the IGBT. In the whole process, the gate resistance is switched from the small resistance to the large resistance, the switch time delay and the electric stress are reduced by the simplest circuit structure, and the function of multi-stage switching is realized.
In this embodiment, the size of the capacitor (C) can be adjusted to the optimal time when the IGBT enters the miller platform, specifically, the gate Resistance (RG) and the IGBT gate capacitance are combined.
Referring to fig. 3, fig. 3 is a schematic diagram illustrating a test effect according to an embodiment of the present application. As shown, t2 is the time when the IGBT enters the miller stage without the driving control unit (2), and generally, the larger the gate resistance, the larger the t2 time, and the larger the turn-off delay. However, after the driving control unit (2) is added, the time for the IGBT to enter the Miller platform is accelerated, the time for the IGBT to enter the Miller platform can be shortened to t1, and the turn-off delay can be greatly shortened.
Example 2
Referring to fig. 4, embodiment 2 is different from embodiment 1 in that: the drive control unit (2) is a Transient Voltage Suppressor (TVS). At the switch switching moment, because TVS diode (D) both ends voltage surpasss TVS's clamping voltage, TVS diode (D) switches on for the electric potential at TVS diode (D) both ends is clamped, the both ends of gate Resistance (RG) are equivalent to the short circuit, gate drive unit (1) will be with minimum gate resistance drive IGBT, make the IGBT gate pole draw down fast or draw high, reach the effect of accelerating IGBT switching speed, resume when gate voltage and driving source pressure differential are less than TVS diode (D) clamping voltage for with gate Resistance (RG) size gate resistance drives IGBT.
According to the IGBT driving circuit, the driving control units (2), such as the capacitor or the TVS diode, are connected to the two ends of the gate Resistance (RG) in parallel, so that the IGBT driving circuit can control the on or off of the switching resistance when the IGBT is switched on or off, and can achieve the effect of accelerating the on or off, thereby reducing the switching delay and the electrical stress and realizing the multi-stage switching function. The application has the advantages of simple structure, obvious effect and easiness in implementation, thereby reducing the development cost.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (2)
1. The IGBT driving circuit is used for driving the IGBT to be switched on and switched off and is characterized by comprising a gate driving unit, a gate driving resistor and a driving control unit, wherein one end of the gate driving resistor is electrically connected with a gate of the IGBT, the other end of the gate driving resistor is electrically connected with the gate driving unit, and the driving control unit is connected with two ends of the gate driving resistor in parallel and used for controlling the switching-on and switching-off speeds of the IGBT.
2. The IGBT driver circuit according to claim 1, wherein the drive control unit is a capacitor or a transient voltage suppressor diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111269096.8A CN113938121A (en) | 2021-10-29 | 2021-10-29 | IGBT drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111269096.8A CN113938121A (en) | 2021-10-29 | 2021-10-29 | IGBT drive circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113938121A true CN113938121A (en) | 2022-01-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111269096.8A Pending CN113938121A (en) | 2021-10-29 | 2021-10-29 | IGBT drive circuit |
Country Status (1)
| Country | Link |
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| CN (1) | CN113938121A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111211762A (en) * | 2020-02-19 | 2020-05-29 | 湖南大学 | SiC MOSFET drive circuit with high turn-on performance |
| CN113098240A (en) * | 2021-03-31 | 2021-07-09 | 西北工业大学 | Drive circuit of Cascode type GaN power device |
| CN216774743U (en) * | 2021-10-29 | 2022-06-17 | 深圳青铜剑技术有限公司 | IGBT drive circuit |
-
2021
- 2021-10-29 CN CN202111269096.8A patent/CN113938121A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111211762A (en) * | 2020-02-19 | 2020-05-29 | 湖南大学 | SiC MOSFET drive circuit with high turn-on performance |
| CN113098240A (en) * | 2021-03-31 | 2021-07-09 | 西北工业大学 | Drive circuit of Cascode type GaN power device |
| CN216774743U (en) * | 2021-10-29 | 2022-06-17 | 深圳青铜剑技术有限公司 | IGBT drive circuit |
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