CN113848685A

CN113848685A - Exposure device and adjusting device suitable for same

Info

Publication number: CN113848685A
Application number: CN202111129274.7A
Authority: CN
Inventors: 不公告发明人
Original assignee: Shanghai Duning Technology Co ltd
Current assignee: Shanghai Duning Technology Co ltd
Priority date: 2021-09-26
Filing date: 2021-09-26
Publication date: 2021-12-28

Abstract

The invention provides an exposure device and an adjusting device suitable for the exposure device. The exposure apparatus includes: mask version, at least a set of projection objective and sensitization base plate, projection objective includes: a first imaging lens and a second imaging lens; the exposure light beam can irradiate the pattern of the mask plate for imaging, an intermediate image surface is formed through the first imaging lens, and the exposure light beam is exposed on the photosensitive substrate through the second imaging lens; the first imaging lens and the second imaging lens are symmetrical relative to the middle image plane lens. The invention can improve the utilization rate of the lens field of view of the exposure device.

Description

Exposure device and adjusting device suitable for same

Technical Field

The invention relates to the technical field of exposure machines, in particular to an exposure device and an adjusting device suitable for the exposure device.

Background

Photolithography is a technique by which patterns can be made on substrates coated with light sensitive media, and is used in the manufacture of Integrated Circuits (ICs) and their packaging, Flat Panel Displays (FPDs), LED lighting, micro-electro-mechanical systems (MEMS), and other precision devices. An exposure apparatus used in photolithography is a tool that effects the transfer of a desired pattern onto a target area of a substrate. A related art exposure apparatus as shown in fig. 1 includes: a light source 1, a mask 2, an adjusting device 3, a Dyson optical system 10, a Dyson optical system 11, and a photosensitive substrate 12 (substrate means a silicon wafer, a glass plate, a PCB, a compound semiconductor substrate, etc.). The dyson optical system 10 comprises a right-angle reflector 4, a lens 5 and a concave reflector 6, the dyson optical system 11 comprises a right-angle reflector 7, a lens 8 and a concave reflector 9, the adjusting device 3 is arranged between the mask 2 and the right-angle reflector 4, the adjusting device 3 is an afocal optical system with two flat ends, and the adjusting device can be arranged at a plurality of positions, for example, the non-numbered dotted line boxes in fig. 1 are other positions where the adjusting device 3 can be arranged. The light source 1 irradiates the pattern image on the light 2, and the pattern image is projected and exposed on the photosensitive substrate 12 through the adjusting device and the Dyson

optical systems

10 and 11.

However, the exposure apparatus described above is configured by combining two sets of dyson optical systems, and the field stop sets the projection area on the photosensitive substrate 12. Due to the fact that the double-Dyson optical system is adopted, the field diaphragm is provided with the trapezoidal opening, the projection area on the photosensitive substrate 12 can be limited to be trapezoidal, hexagonal, rhombic or parallelogram only by means of the trapezoidal field diaphragm, the size of the usable lens field does not reach 50% of the actual lens field, the utilization rate of the lens field is low, the other defect of the double-Dyson optical system is that the requirement of a lens with a larger numerical aperture cannot be met, the complexity of the system is increased along with the increase of the numerical aperture NA, and the field of view is correspondingly reduced.

Disclosure of Invention

The technical problem to be solved by the technical scheme of the invention is as follows: on the premise of realizing the positive magnification, how to improve the utilization rate of the lens view field of the exposure device.

In order to solve the above technical problem, an exposure apparatus according to an aspect of the present invention includes: mask version, at least a set of projection objective and sensitization base plate, projection objective includes: a first imaging lens and a second imaging lens; the exposure light beam can irradiate the pattern of the mask plate for imaging, an intermediate image surface is formed through the first imaging lens, and the exposure light beam is exposed on the photosensitive substrate through the second imaging lens; the first imaging lens and the second imaging lens are symmetrical relative to the middle image plane lens.

Alternatively, the projection objectives are of only one set.

Optionally, the projection objective has 1 to N groups, and the exposure apparatus further includes: a light splitting system and 1 to N lighting units; the light splitting system is suitable for equally dividing a light source into 1 to N light source beams to correspondingly enter the 1 to N lighting units; the illumination unit is suitable for homogenizing and shaping the corresponding light source light beams to form 1 to N exposure light beams after corresponding light splitting, and the 1 to N exposure light beams after light splitting can irradiate corresponding patterns of the mask and are incident to 1 to N groups of corresponding projection objectives; n is a natural number greater than or equal to 2.

Optionally, the mask pattern may be configured to be projected by a projection objective exposure field, and the region to be exposed of the photosensitive substrate may be correspondingly configured to be a sub-exposure region projected by the projection objective exposure field; the exposure apparatus further includes: an exposure system, a motion stage and a mask stage; the exposure system is adapted to: when in exposure, the exposure light beam irradiates the current mask pattern of the exposure field of the projection objective, and the irradiated mask pattern is synchronously scanned and projected to the current sub-exposure area on the horizontal plane through the mask and the photosensitive substrate by the projection objective so as to form the current sub-exposure pattern; synchronously scanning and moving the mask and the photosensitive substrate on the horizontal plane according to an S-shaped track to continuously project the illuminated pattern of the mask to the next sub-exposure area so as to complete the splicing exposure of the sub-exposure area in the current exposure field, thereby realizing the exposure of the current exposure field; adjusting the moving table and the mask table to enable the mask and the photosensitive substrate to move relatively in the horizontal plane so as to continuously project the mask pattern to a sub-exposure area of the next exposure field to complete splicing exposure of the next exposure field; until all exposure fields needing exposure on the photosensitive substrate are exposed.

Optionally, the mask pattern is set as a sub-mask pattern that can be projected by a projection objective exposure field, and the region to be exposed of the photosensitive substrate can be correspondingly set as a sub-exposure region that is projected by the projection objective exposure field; the exposure apparatus further includes: an exposure system, a motion stage and a mask stage; the exposure system is adapted to: when in exposure, the exposure light beam irradiates the current sub-mask pattern of the exposure field of the projection objective, the mask pattern is projected to the current sub-exposure area through the projection objective, and the mask and the photosensitive substrate synchronously scan and move on the horizontal plane to form the current sub-exposure pattern; and adjusting the moving table and the mask table to enable the mask and the photosensitive substrate to synchronously scan and move on the horizontal plane according to the S-shaped track so as to continuously project the mask pattern to the next sub-exposure area to form the next sub-exposure pattern, so that the scanning splicing exposure of all the required exposure areas of the photosensitive substrate is realized.

Optionally, the mask pattern may be correspondingly set to be a 1 st to nth sub-mask patterns projected by 1 to N sets of projection objective exposure fields, respectively, the region to be exposed of the photosensitive substrate may be correspondingly set to be a sub-exposure region set projected by the 1 to N sets of projection objective exposure fields, and the sub-exposure region set is composed of 1 st to N sub-exposure regions formed by the 1 to N sets of projection objective exposure fields by simultaneous projection; the exposure apparatus further includes: an exposure system, a motion stage and a mask stage; the exposure system is adapted to: during exposure, the 1 to N split exposure beams respectively irradiate the 1 st to N th sub-mask patterns corresponding to the 1 to N groups of projection objective exposure fields, the 1 st to N th sub-mask patterns are projected to the current sub-exposure area group through the 1 to N groups of projection objectives, and the mask and the photosensitive substrate synchronously scan and move on the horizontal plane to form the current exposure field pattern; adjusting the moving table to enable the mask and the photosensitive substrate to move relatively in the horizontal plane so as to continuously project the mask pattern to the next exposure field area to complete exposure of the next exposure field; until all exposure fields needing exposure on the photosensitive substrate are exposed.

Optionally, the mask pattern may be correspondingly set as a sub-mask pattern set projected by 1 to N sets of projection objective exposure fields, the sub-mask pattern set is composed of 1 to N sub-mask patterns projected by the 1 to N sets of projection objective exposure fields at the same time, the area to be exposed of the first photosensitive substrate may be correspondingly set as a sub-exposure area set projected by the 1 to N sets of projection objective exposure fields, and the sub-exposure area set is composed of 1 to N sub-exposure areas projected by the 1 to N sets of projection objective exposure fields at the same time; the exposure apparatus further includes: an exposure system, a motion stage and a mask stage; the exposure system is adapted to: during exposure, 1 to N split exposure beams respectively irradiate the sub-mask pattern groups corresponding to the exposure fields of the 1 to N groups of projection objectives, the current sub-mask pattern group is projected to the current sub-exposure area group through the 1 to N groups of projection objectives, and the mask and the photosensitive substrate synchronously scan and move on the horizontal plane to form a current sub-exposure pattern; and adjusting the motion table and the mask table to enable the mask and the photosensitive substrate to synchronously scan and move on the horizontal plane according to the S-shaped track so as to continuously project the next sub-mask pattern group to the next sub-exposure area group to form the next sub-exposure pattern, thereby realizing the scanning splicing exposure of all the required exposure areas of the photosensitive substrate.

Optionally, the field of view of the projection objective exposure field is hexagonal, trapezoidal, triangular, parallelogram, or rhombus.

Optionally, the first imaging lens is composed of 1 to M first lenses, and the second imaging lens is composed of 1 to M second lenses; the 1 to M first lenses and the 1 to M second lenses are the same and are symmetrically arranged about the intermediate image plane lens, and M is a natural number greater than or equal to 2.

Optionally, the magnification of the projection objective is positive one time, and the object image side numerical apertures are the same; the magnification of the first imaging lens is minus one time, and the object image side numerical apertures are the same; the magnification of the second imaging lens is negative one time, and the object image side numerical apertures are the same.

In order to solve the above technical problem, an embodiment of the present invention further provides an adjusting apparatus suitable for the exposure apparatus, including: the adjusting element is at least arranged at a position where at least one exposure light beam passes between the projection objective and the mask plate, in the projection objective and between the projection objective and the photosensitive substrate; the adjustment system is adapted to adjust the adjustment element to perform optical path adjustment of the exposure beam.

Optionally, the adjusting system includes: a pair of magnification decoupling adjustment units, the adjustment element comprising: a pair magnification decoupling element; the symmetrical magnification decoupling element at least comprises a first symmetrical magnification decoupling element and a second symmetrical magnification decoupling element, the first symmetrical magnification decoupling element is arranged in the first imaging lens, and the second symmetrical magnification decoupling element is arranged in the second imaging lens; an air distance is reserved between the first symmetrical multiplying power decoupling element and the second symmetrical multiplying power decoupling element; the symmetrical multiplying power decoupling adjustment unit is suitable for adjusting the first symmetrical multiplying power decoupling element and the second symmetrical multiplying power decoupling element to translate along an optical axis, and the air distance is modulated to correct multiplying power errors of the projection objective.

Optionally, the adjusting system includes: a first wedge element control unit, the adjustment element comprising: a first wedge element set; the first wedge member set includes: a first wedge member having a first inclined surface and a first oblique angle and a second wedge member having a second inclined surface and the first oblique angle; the first wedge-shaped element is assembled between the projection objective and the mask, between the first imaging lens and the intermediate image plane, between the intermediate image plane and the second imaging lens or between the projection objective and the photosensitive substrate; the first wedge element control unit is suitable for controlling the relative motion between the first wedge element and the second wedge element along the inclined surface so as to adjust the difference of focal planes of the corresponding projection objectives.

Optionally, the adjusting system includes: a second wedge element control unit, the adjustment element comprising: a second wedge element set; the second wedge member set includes: a third wedge element having a third slope and a second bevel and a fourth wedge element having a fourth slope and the second bevel; the second wedge element is assembled between the projection objective and the mask, between the first imaging lens and the intermediate image plane, between the intermediate image plane and the second imaging lens or between the projection objective and the photosensitive substrate; the second wedge element control unit is adapted to control the second wedge element group to tilt to adjust an asymmetric magnification error of the corresponding projection objective.

Optionally, the adjusting system includes: a tablet control unit, the adjustment element comprising: a plate member; the flat plate element is arranged between the projection objective and the mask plate, between the first imaging lens and the intermediate image plane, between the intermediate image plane and the second imaging lens or between the projection objective and the photosensitive substrate; the flat panel control unit is suitable for controlling the flat panel element to rotate around an X axis relative to a Y axis and an optical axis plane or rotate around a Y axis direction relative to the X axis and the optical axis plane so as to adjust the image point to translate on the X axis or the Y axis.

The technical scheme of the invention at least comprises the following beneficial effects:

the exposure device adopts the double-lens projection objective lens which is symmetrical about the middle image surface lens, so that the projection objective lens has positive magnification and can utilize all fields of view of the lens at the same time.

In an alternative of the exposure apparatus according to the present invention, the projection objective may have a plurality of groups, and may further include a light splitting system and an illumination unit corresponding to the plurality of groups of projection lenses. The adoption of multiple groups of double-lens projection objectives which are symmetrical about the middle image plane lens can further improve the exposure efficiency and is suitable for the projection exposure of large-size masks.

Because the exposure device of the technical scheme of the invention adopts the double-lens projection objective lens which is symmetrical about the middle image surface lens: when exposing all patterns of the mask, the exposure system can control the motion platform to move the photosensitive substrate relative to the mask only according to the scanning mode of the exposure area; when partial pattern of the mask is exposed, the exposure system can control the motion platform system and the mask platform system to move the photosensitive substrate relative to the mask or synchronously move the photosensitive substrate and the mask according to the switching mode of the mask pattern and the scanning mode of the exposure area. Because the exposure device adopts the splicing exposure mode, the exposure cost can be further reduced, and the exposure efficiency is improved.

The exposure device of the technical scheme of the invention can further use a splicing exposure mode when a plurality of groups of double-lens projection objectives are adopted, and because the plurality of groups of double-lens projection objectives can increase the size of the mask pattern of single exposure projection, the exposure efficiency is further improved when the splicing exposure mode is adopted.

The adjusting device suitable for the exposure device provided by the technical scheme of the invention adopts the adjusting system and the plurality of adjusting elements, can adjust the light path of the exposure light beam of the exposure device, and can finely adjust parameters such as symmetric multiplying power, asymmetric multiplying power, focal plane height, image point position translation and the like, thereby realizing the fine adjustment function of the exposure device.

Drawings

Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:

FIG. 1 is a schematic structural diagram of an exposure apparatus in the prior art;

fig. 2 is a schematic structural diagram of an exposure apparatus according to an embodiment of the present invention;

fig. 3 is a schematic structural diagram of a symmetric dual-lens projection objective lens according to a technical solution of the present invention;

fig. 4 is a schematic structural diagram of another exposure apparatus provided in the technical solution of the present invention;

fig. 5 is a schematic view of a hexagonal lens exposure field configuration according to an embodiment of the present invention;

fig. 6 is a schematic view of a configuration shape of an exposure field of a trapezoidal lens according to an embodiment of the present invention;

fig. 7 is a schematic view of a triangular lens exposure field configuration shape according to an embodiment of the present invention;

fig. 8 is a schematic view of a configuration shape of a rhombic lens exposure field according to the present invention;

fig. 9 is a schematic view of a configuration shape of an exposure field of a lens in a parallelogram according to an embodiment of the present invention;

FIG. 10 is a schematic view illustrating the configuration characteristics of the lens exposure field applicable to the exposure apparatus of the present invention;

fig. 11 is a schematic diagram of a process of implementing splicing exposure by an exposure apparatus according to a technical solution of the present invention;

fig. 12 is a schematic structural view of another exposure apparatus according to an embodiment of the present invention;

FIG. 13 is a schematic structural diagram of an exposure apparatus including an adjustment device according to an embodiment of the present invention;

FIG. 14 is a schematic view of the placement of a wedge adjustment member according to the present invention;

FIG. 15 is a schematic view of another wedge adjustment element placement provided in accordance with aspects of the present invention;

FIGS. 16-18 are schematic views of the translational directions of the wedge adjustment member;

FIG. 19 is a schematic view of a placement position of a flat adjustment member according to an embodiment of the present invention;

FIG. 20 is a schematic view of the adjustment direction of the flat plate adjustment element;

FIG. 21 is a schematic structural diagram of an exposure apparatus including an adjustment device according to an embodiment of the present invention;

FIG. 22 is a schematic structural diagram of an exposure apparatus including a plurality of projection objectives according to an embodiment of the present invention;

FIG. 23 is a schematic structural diagram of another exposure apparatus with multiple projection objectives according to the present invention;

FIG. 24 is a schematic view of another exposure apparatus with multiple projection objectives according to the present invention, which is used to perform exposure on a spliced whole silicon wafer or a partial silicon wafer region;

FIG. 25 is a schematic structural diagram of another exposure apparatus with multiple projection objectives according to the present invention;

fig. 26 is a schematic diagram of a process of implementing exposure of a spliced whole silicon wafer or a partial silicon wafer region by using another exposure apparatus including a plurality of projection objectives according to the technical solution of the present invention;

fig. 27 is a schematic structural diagram of another exposure apparatus including a plurality of projection objectives and an adjustment element according to the present invention.

Detailed Description

In order to better and clearly show the technical scheme of the invention, the invention is further described with reference to the attached drawings.

An exposure apparatus a shown in fig. 2, comprising: a mask plate 10, a projection objective 11 and a photosensitive substrate 12. Wherein the projection objective 11 comprises: a first imaging lens 110 and a second imaging lens 111. The exposure light source 13 may form an exposure light beam through the illumination unit 14, the exposure light beam may irradiate the pattern of the mask 10 to form an image, and the image passes through the first imaging lens 110 to form an intermediate image plane 15, and then is exposed to the photosensitive substrate 12 through the second imaging lens 111. The lens structures of the first imaging lens 110 and the second imaging lens 111 are lens-symmetric about the intermediate image plane 15.

The exposure device a is configured by using a first imaging lens 110 and a second imaging lens 111 which are lens-symmetric with respect to the intermediate image plane 15. The first imaging lens 110 and the second imaging lens 111 can be formed by various lens structures, but the lens combination of the first imaging lens 110 and the second imaging lens 111 is mirror-symmetrical about the intermediate image plane 15. The intermediate image is a characteristic optical structure which, inside the optical system shown in fig. 2, has an image plane which divides the projection objective 11 into two parts: the first part comprises a first imaging lens 110, the object surface of which corresponds to the mask 10 and the image surface of which corresponds to the intermediate image surface; the second portion includes a second imaging lens 111 whose object plane is the image plane of the first imaging lens 110, and the image plane corresponds to the photosensitive substrate 12. In the present embodiment, the magnification of the first imaging lens 110 is minus one time, and the magnification of the second imaging lens 111 is minus one time, which makes the overall magnification of the projection objective 11 plus one time.

Different from the projection objective structure adopting a dyson optical system in the prior art, the lens combination of the first imaging lens 110 and the second imaging lens 111 adopted by the exposure device a takes the middle image plane 15 as mirror symmetry, so that the field utilization rate of the projection objective can be greatly improved.

Fig. 3 specifically illustrates a projection objective 11', which employs a first imaging lens 210 and a second imaging lens 211 that are symmetric about an intermediate image plane, and constitutes an effect that the exposure apparatus a shown in fig. 2 can achieve large-field projection exposure. Referring to fig. 3, the first imaging lens 210 includes: optical lenses g 1-g 8. The second imaging lens 211 includes: optical lenses g 9-g 16. The optical lenses g 1-g 8 and the optical lenses g 9-g 16 are respectively symmetrical about the middle image plane 15, namely: optical lens g1 and optical lens g16 are arranged symmetrically about intermediate image plane 15, optical lens g2 and optical lens g15 are arranged symmetrically, optical lens g3 and optical lens g14 are arranged symmetrically, … …, and optical lens g8 and optical lens g9 are arranged symmetrically.

With continued reference to fig. 3, the optical lenses g1 through g8 further include lens symmetry relationships, that is, the optical lenses g1 through g4 are lens symmetric with the optical lenses g5 through g8, wherein the optical lens g1 is matched with the curved surface of the optical lens g2, the optical lens g8 is also matched with the curved surface of the optical lens g7, the exposure light beam is imaged by a mask pattern, enters the mirror surface of the optical lens g1 from the object side, passes through the matched curved surface of the optical lens g1 and the optical lens g2, enters the optical lens g3, enters the optical lens g4, passes through the optical lens g5, the optical lens g6, the optical lens g7 and the optical lens g8 symmetrically arranged with the lenses g1 through g4, and forms an intermediate image surface 15 on the image side through the mirror surface of the optical lens g 8.

With continued reference to fig. 3, optical lenses g 9-g 16 also symmetrically further include lens symmetry relationships, i.e., optical lenses g 9-g 12 are symmetrical to optical lenses g 13-g 16, wherein optical lenses g9 and g10 are respectively arranged symmetrically to optical lenses g8 and g7, optical lenses g9 and g10 also have curved surface matching, and optical lenses g16 and g15 also have curved surface matching because of being arranged symmetrically to optical lenses g9 and g 10. After entering the mirror surface of the optical lens g9 at the object side, the exposure light beam passing through the intermediate image plane 15 passes through the matching curved surfaces of the optical lens g9 and the optical lens g10, enters the optical lens g11, enters the optical lens g12, sequentially passes through the optical lenses g 13-g 16 symmetrically arranged with the lenses g 9-g 12, and projects the exposure pattern on the photosensitive substrate through the mirror surface of the optical lens g 16.

The projection objective lens 11' shown in fig. 3 is a lens having a double symmetry, and has optical lenses combined and transmitted in a symmetrical manner inside the lens, so that the system has a symmetrical structure, balanced aberrations, and a high element repetition rate, and the utilization rate of the exposure field can be maximized.

Based on the exposure apparatus a shown in fig. 2, with continued reference to fig. 4, in order to achieve effective exposure of a large-sized silicon wafer (i.e., a photosensitive substrate) of the exposure apparatus, an exposure apparatus b further includes: an exposure system 20, a mask table (not shown), and a motion table 21. Wherein the mask stage can adjust the movement of the mask plate in the horizontal plane; the motion stage can adjust the motion of the photosensitive substrate 12 in the horizontal plane.

Based on the exposure device a, the exposure device can be combined with an exposure system configured by a computer system according to the corresponding relation between the mask plate, the exposure field of the objective lens and the size of the silicon wafer to realize exposure.

In one case, the mask size, the objective lens exposure field of view and the silicon wafer size are basically the same, and the objective lens exposure field of view is not smaller than the mask and the silicon wafer effective pattern area size. In one exposure, the mask plate pattern is directly exposed to the silicon wafer exposure area through the objective lens exposure field, and the current silicon wafer exposure is completed. After the current exposure is finished, the photoetching machine can control and switch the current mask and the silicon wafer through the exposure system, and expose the next mask pattern to the exposure area of the next silicon wafer through the objective lens exposure field.

In another case, the mask size is larger than the exposure field size of the objective lens, the silicon wafer size is larger than the mask size, and the mask pattern needs to be spliced and exposed. In an example of the exposure apparatus b shown in fig. 4, a current mask plate pattern may be set to be projectable by an exposure field of a projection objective, an area to be exposed of the photosensitive substrate may be correspondingly set to be a sub-exposure area projected by the exposure field of the projection objective, and the mask plate and the photosensitive substrate are synchronously moved in a scanning motion in a horizontal plane to form a current sub-exposure pattern; and synchronously scanning and moving the mask plate and the photosensitive substrate in the horizontal plane according to an S-shaped track to continuously project the illuminated pattern of the mask plate to the next sub-exposure area so as to complete the splicing exposure of the sub-exposure area in the current exposure field, thereby realizing the exposure of the current exposure field. The exposure light source of the exposure apparatus b may be LED, mercury lamp or laser illumination, providing i-line or gh-line or KrF or ArF exposure illumination. It should be noted that the present invention is not limited to the above-mentioned specific spectral line light source, and any exposure light source such as ultraviolet, deep ultraviolet, extreme ultraviolet, etc. is covered in the protection scope of the present patent. The light beam from the light source entering the illumination unit 14 is re-homogenized and shaped to form an exposure beam. The shaped exposure beam irradiates a pattern image on a mask plane (projection objective plane), and the pattern beam is projected and exposed on a silicon wafer plane (i.e. a photosensitive substrate, i.e. a projection objective plane) through the projection objective 11 (or the projection objective 11').

The projection objective exposure field may be configured as shown in fig. 5, with a circular dotted line being the objective field and the lens exposure field being hexagonal in the scanning exposure direction. The hexagonal shape may be arbitrary. The configuration shape of the exposure field is not limited to a hexagon, and in other embodiments, the configuration shape may also be a trapezoid or other patterns that are considered to be beneficial for implementation of stitching, for example, the shapes of the exposure field of the lens shown in fig. 6 to 9 are a trapezoid, a triangle, a diamond, and a parallelogram, respectively. In the splicing exposure process, the sub-exposure regions corresponding to the exposure fields need to be spliced and exposed in the scanning exposure direction through the exposure fields, so that the sub-exposure regions of the photosensitive substrates need to be spliced. With reference to fig. 10, the configuration shape of the exposure field may be a geometric shape having a feature of a stitching triangle structure, so that stitching of the sub-exposure regions is realized during the stitching exposure process. In the splicing exposure process, areas which do not need to be exposed (namely non-sub-exposure areas) can be shielded through chrome edges of the mask, and the sub-exposure areas which need to be exposed are spliced and exposed in a splicing exposure field mode.

Fig. 11 illustrates a process of splicing and exposing the sub-exposure area of the photosensitive substrate in the scanning exposure direction by the exposure device b based on the hexagonal lens exposure field. The reticle pattern is exposed to a silicon wafer (i.e., a photosensitive substrate) by an exposure device b. Wherein the hexagonal exposure field achieves the tiled exposure of the sub-exposure area by the feature of the tiled triangle structure (i.e., the hypotenuse area in fig. 11) in the hexagon.

With continued reference to fig. 4 in conjunction with fig. 11, if the exposure device b can control the motion stage via the exposure system 20, the lens exposure field performs a stitching scanning exposure on the sub-exposure area of the photosensitive substrate in a manner similar to an S-shaped scanning manner. The exposure system 20 may be adapted to perform a stitching exposure as follows:

when in exposure, the exposure light beam irradiates the current mask plate pattern of the exposure field of the projection objective, and the mask plate pattern is projected to the current sub-exposure area through the projection objective so as to form the current sub-exposure pattern;

and adjusting the motion table and the mask table to enable the photosensitive substrate to move along a preset scanning exposure direction so as to continuously project the mask pattern to the next sub-exposure area to complete splicing exposure of the current exposure field. The process is repeated to expose all exposure fields of the photosensitive substrate to be exposed.

In another case, the size of the mask pattern area is consistent with that of the silicon wafer pattern area and is larger than that of the objective lens exposure field, the objective lens exposure field can only project part of the mask pattern to part of the silicon wafer area, and the mask pattern needs to be projected in a splicing manner to realize splicing exposure. In an example of the exposure apparatus c shown in fig. 12, it is different from the exposure apparatus c shown in fig. 4 which is suitable for a large-sized silicon wafer but performs exposure of a reticle pattern all at once. In the exposure device c, the area to be exposed of the photosensitive substrate can be correspondingly set to be a sub-exposure area projected by the exposure field of the projection objective, the current mask plate pattern is a large-size mask plate and comprises a plurality of sub-mask plate patterns, and the sub-mask plate patterns are set to be capable of being projected to at least one corresponding sub-exposure area by the exposure field of the projection objective. In order to realize effective exposure of a large-size mask and a large-size silicon wafer (i.e., a photosensitive substrate), the exposure apparatus c of fig. 12 further includes: an exposure system 30, a motion stage 31, and a mask stage 32. Wherein the motion stage 31 can adjust the motion of the photosensitive substrate 12 in the horizontal plane, and the mask stage 32 can adjust the motion of the mask 10 in the horizontal plane.

The exposure beam of the exposure device c irradiates only a partial pattern on the mask surface (projection objective surface) to form an image in one scanning exposure, and the beam of the partial pattern is projected and exposed on the sub-exposure area corresponding to the silicon wafer surface (i.e. the photosensitive substrate, i.e. the projection objective image surface) through the projection objective 11 (or the projection objective 11').

The configuration shape of the projection objective exposure field can be hexagonal as shown in fig. 5, and the configuration shape of the hexagon has a splicing triangular structure characteristic, so that splicing of sub-exposure areas is realized in the splicing exposure process. In the splicing exposure process, the exposure field of the hexagonal lens of the exposure device c can expose the mask pattern to a silicon wafer (namely a photosensitive substrate) along the scanning exposure direction, and the splicing of the sub-exposure regions is realized through the hexagonal splicing triangular structural features of the exposure field. Because the exposure device c is also suitable for large-size mask plates and can splice and expose large-size photosensitive substrates, the exposure system 30 needs to control the mask table 32 to synchronously control the mask plates and the moving table during splicing and exposure so as to realize that sub-mask plate patterns of the mask plates are projected and exposed to corresponding sub-exposure areas in the scanning and exposure process. With continued reference to fig. 12, the exposure system 30 may be adapted to implement a stitching exposure in the following manner:

when in exposure, the exposure light beam irradiates the current sub-mask pattern of the exposure field of the projection objective, and the sub-mask pattern is projected to the current corresponding sub-exposure area through the projection objective;

adjusting the motion table and the mask table to enable the photosensitive substrate to move along a preset first scanning exposure direction corresponding to the current sub-mask pattern so as to continuously project the current sub-mask pattern to the corresponding sub-exposure area to complete splicing exposure of the current sub-mask pattern on the photosensitive substrate;

and adjusting the motion table and the mask table to enable the photosensitive substrate to move along a predetermined second scanning exposure direction corresponding to the next sub-mask pattern so as to continuously project the next sub-mask pattern to the corresponding sub-exposure area, so that the splicing exposure of the next sub-mask pattern on the photosensitive substrate is completed until the splicing exposure of all the required exposure areas of the photosensitive substrate is completed.

In other embodiments, the exposure system 30 may also be configured according to the execution flow of the exposure system 30 ', and the execution of the exposure system 30' implements the stitching exposure as follows:

adjusting the mask table to enable the exposure beam to irradiate a sub-mask pattern under the exposure field of the projection objective, and projecting the next sub-mask pattern to the corresponding sub-exposure area through the projection objective until all sub-mask patterns are projected to the corresponding sub-exposure area;

and adjusting the motion platform to enable the photosensitive substrate to move along the preset scanning exposure direction, and continuing to project all sub-mask patterns to the corresponding sub-exposure areas next time until all the sub-exposure areas are exposed, thereby completing the splicing exposure.

According to the control of different exposure systems on the motion table and/or the mask table, the silicon wafer and the mask plate need to move relatively or in the same direction in the splicing exposure process so as to realize scanning control. And because the positive one-time projection relation is realized on the object plane and the image plane of the projection objective, the intermediate image does not need to be scanned and controlled, and only the mask plate and the silicon wafer corresponding to the object plane and the image plane need to be directly subjected to displacement control through the mask table and the motion table.

An adjustment device a shown in fig. 13 is configured by using an afocal optical system in cooperation with an exposure device a based on the exposure device a. The adjustment device a includes: an adjustment system 40 and a plurality of adjustment elements (the positions at which the adjustment elements can be set are illustrated in phantom in the rectangle in fig. 13). The exposure apparatus a may be provided with at least one adjustment element, which is in principle arranged at a position through which the exposure beam passes, for example, at a position through which at least one exposure beam passes between the projection objective 11 and the reticle 10, within the projection objective 11 and between the projection objective 11 and the photosensitive substrate 12. The adjusting element can also be arranged inside the projection objective 11 between the first imaging lens 110 and the intermediate image plane 15 or between the intermediate image plane 15 and the second imaging lens 111. The adjusting system 40 can adjust the adjusting element according to the different configuration principles of the adjusting element to adjust the optical path of the exposure beam.

Depending on the function of the adjustment elements, with continued reference to fig. 13, the adjustment system 40 may further be comprised of a pair magnification decoupling adjustment unit 400, a first wedge element control unit 401, a second wedge element control unit 402, and a flat panel control unit 403.

Corresponding to the pair magnification decoupling adjustment unit 400, the adjustment element may include: a pair magnification decoupling element; the symmetrical magnification decoupling element at least comprises a first symmetrical magnification decoupling element and a second symmetrical magnification decoupling element, the first symmetrical magnification decoupling element is arranged in the first imaging lens, and the second symmetrical magnification decoupling element is arranged in the second imaging lens; the first symmetrical multiplying power decoupling element and the second symmetrical multiplying power decoupling element are symmetrically arranged around the middle image plane; the symmetrical multiplying power decoupling adjustment unit is suitable for adjusting the first symmetrical multiplying power decoupling element and the second symmetrical multiplying power decoupling element to translate along an optical axis, and changing the size of air space between lenses in the objective lens so as to correct multiplying power errors of the projection objective. Since any optical system can find an element with a comparatively decoupled magnification, and is not limited to a specific optical structure, a lens with a comparatively good performance of decoupling magnification in the first imaging lens or the second imaging lens can be selected as the symmetrical magnification decoupling element, and the magnification error of the projection objective is corrected by adjusting the symmetrical magnification decoupling element through the magnification decoupling adjustment unit 400.

Corresponding to the first wedge element control unit 401, the adjustment element may further comprise: a first wedge element set; the first wedge member set includes: a first wedge member having a first inclined surface and a first oblique angle and a second wedge member having a second inclined surface and the first oblique angle; the first wedge-shaped element is assembled between the projection objective and the mask, between the first imaging lens and the intermediate image plane, between the intermediate image plane and the second imaging lens or between the projection objective and the photosensitive substrate; the first wedge element control unit is suitable for controlling the relative motion between the first wedge element and the second wedge element along the inclined surface so as to adjust the difference of focal planes of the corresponding projection objectives. Fig. 14 and 15 show schematically the positions of the first wedge element group, and the wedge elements in fig. 14 and 15 are shown by dotted lines in the figure, and the exposure apparatus a can set the adjustment element at any dotted line element position in fig. 14 and 15, i.e. the first wedge element group at any position from x1 to x4 can be adopted. That is, the first wedge element group may be provided between the reticle 10 and the projection objective 11, between the projection objective 11 and the photosensitive substrate, between the first lens 110 and the intermediate image plane 15, or between the intermediate image plane 15 and the second lens 111 of the exposure apparatus a.

The first wedge-shaped element group consisting of the first wedge-shaped element and the second wedge-shaped element is equivalent to a wedge-shaped lens group, when one wedge-shaped lens moves along the direction of the inclined plane, the optical path actually irradiated to the first wedge-shaped element group is changed by increasing or decreasing the thickness between the wedge-shaped lenses, so that the focal plane can be changed, and the relative light beam position of the optical path where the first wedge-shaped element group is placed can be changed through the first wedge-shaped element control unit 401, so that the optimal positions of the mask plate and the photosensitive substrate are obtained. In the first wedge element group, the wedge lens can be used to adjust the difference between the focal planes of different projection objectives, the wedge plate can move along the inclined plane, and the schematic diagram of the translation of the movement of the wedge lens along the inclined plane direction can refer to fig. 16 and 18: FIG. 16 illustrates the direction of translation of the wedge lens along the bevel, FIG. 17 illustrates the wedge lens translating up the bevel with decreasing optical path and moving the focal plane generally upward, and FIG. 18 illustrates the wedge lens translating down the bevel with increasing optical path and moving the focal plane generally downward.

Corresponding to the second wedge element control unit 402, the adjustment element may further comprise: a second set of wedge elements. The second wedge element group can be doubled as the first wedge element group or have the same arrangement structure as the first wedge element group. The second wedge element control unit 402 is adapted to control the tilting of said second wedge element set to adjust the asymmetric magnification error of the corresponding projection objective. The second wedge-shaped element group can be regarded as a flat plate as a whole, and can rotate around the X axis of the horizontal plane to adjust the image surface to translate along the Y direction and rotate around the Y axis to adjust the image surface to translate along the X direction. The second wedge element group (or the first wedge element group) can be rotated to be changed by the second wedge element control unit 402 to obtain an accurate image point. The arrangement position of the second wedge member set can refer to fig. 14 and 15.

Corresponding to the tablet control unit 403, the adjustment element may further include: a plate member; the flat plate element is arranged between the projection objective and the mask plate, between the first imaging lens and the intermediate image plane, between the intermediate image plane and the second imaging lens or between the projection objective and the photosensitive substrate; the plate control unit 403 is adapted to control the plate element to rotate around the X-axis relative to the Y-axis and the optical axis plane or to rotate around the Y-axis direction relative to the X-axis and the optical axis plane to adjust the translation of the image point on the X-axis or the Y-axis. The adjustment mode of the flat plate element is similar to that of the second wedge-shaped element group, but the second wedge-shaped element group can be integrally regarded as the flat plate element, the two are capable of adjusting the translation of the image surface in the Y direction by rotating around the X axis, and the translation of the image surface in the X direction by rotating around the Y axis is realized by adopting different adjustment element structure modes. Referring to fig. 19, the schematic position diagram of the plate element based on the exposure apparatus a may be configured at any one of positions y1 to y4, that is, may be configured between the reticle 10 and the projection objective 11, between the projection objective 11 and the photosensitive substrate, between the first lens 110 and the intermediate image plane 15, or between the intermediate image plane 15 and the second lens 111 of the exposure apparatus a.

The schematic diagram of the image point translation adjusted by the plate tilt can refer to fig. 20, the image point translation can be adjusted by using the plate element tilt, and the plate rotates around the X axis in the plane of the Y axis and the optical axis, which causes the translation of the X image point on the X axis; if the plate is rotated about the Y-axis in the plane of the X-axis and the optical axis, a translation of the Y-image point in the Y-axis will result.

In other embodiments, the adjustment element may be adjusted manually, or the corresponding adjustment element may be fine-tuned by the adjustment system according to the system configuration, so as to implement the optical path modulation function of the adjustment element. The above-mentioned types of adjusting elements, that is, the magnification decoupling element, the first wedge element group, the second wedge element group, and the flat plate element, may be configured with one element or a plurality of elements as required on any exposure apparatus a to c. Taking the adjustment device a as an example, and referring to fig. 21, an exposure device a with an adjustment element added includes: the projection objective lens of a pair of magnification decoupling elements or a pair of magnification decoupling element groups (not shown in the figure) is configured, and only the preset optical lens which can be used as the pair of magnification decoupling elements or the pair of magnification decoupling element groups in the projection objective lens is manually adjusted in the space distance between the lenses, so that magnification compensation is realized; a first wedge element group 16 is arranged between the mask plate 10 and the projection objective 11, and the wedge elements can be controlled to translate along the inclined plane through manual operation or a first wedge element control unit 401 so as to realize focal plane adjustment; a flat element 17 is arranged between the projection objective 11 and the photosensitive substrate, and can be controlled to rotate around the X-axis or the Y-axis by a manual or flat control unit 403 to realize the image point calibration.

In other embodiments, the projection objective structure may also include a wedge element, and the wedge element may be tilted to adjust asymmetric magnification errors, so as to eliminate different magnification errors of a single lens in the X and Y directions.

An exposure apparatus d shown in fig. 22 includes: a mask 50, projection objectives 51 to 53, a photosensitive substrate 54, a light splitting system 55, and illumination units 56 to 58. The light splitting system 55 is adapted to equally divide the light source into light source light beams s1 to s3 to enter the lighting units 56 to 58, respectively; the illumination units 56 to 58 are adapted to homogenize and shape the corresponding light source beams to form corresponding split exposure beams b1 to b3, which split exposure beams b1 to b3 can illuminate the corresponding patterns of the reticle 50 and are incident on the corresponding projection objectives 51 to 53. In other embodiments, the projection objective may be configured with a number of 2, 4 or other multiples as desired. The configuration of the projection objectives 51 to 53 can be referred to the configuration of the projection objective 11 (or the projection objective 11') of the exposure device a.

The lens is projected by a plurality of projection objectives simultaneously, so that splicing exposure of large-size mask patterns and large-size silicon wafers (namely photosensitive substrates) can be realized, the lens manufacturing cost is greatly reduced, and the industrial cost of exposure production is reduced.

With continued reference to fig. 22, in an exposure apparatus including a plurality of projection objectives, the exposure beam projects a plurality of patterns of a reticle onto corresponding objectives, and the projection objectives have a plurality of intermediate image planes and can project a plurality of sub-exposure regions simultaneously. For example, in the exposure apparatus d, three sub-reticle patterns of the reticle 50 are projected onto the projection objectives 51 to 53 to form intermediate image planes z1 to z3, and since the three projection objectives can simultaneously perform exposure projection on the sub-exposure regions q1 to q3 of the respective exposure fields during exposure, a large sub-exposure region group (sub-exposure regions q1 to q3) can be formed on the photosensitive substrate 54 by one exposure.

Based on the exposure device d, the exposure device can be combined with an exposure system configured by a computer system according to the corresponding relation between the mask plate, the exposure field of the objective lens formed by splicing the mask plate and the silicon wafer, so as to realize exposure.

In one case, the size of the mask plate and the size of the splicing direction of the spliced objective exposure view field are consistent with the size of the silicon wafer, and the size of the splicing direction of the spliced objective exposure view field is not smaller than the sizes of the mask plate and the effective graphic area of the silicon wafer. In one exposure, the mask pattern is directly exposed to the silicon wafer exposure area through the spliced objective lens exposure field by one scanning, and the current silicon wafer exposure is completed. After the current exposure is finished, the photoetching machine can control and switch the current mask and the silicon wafer through the exposure system, and expose the next mask pattern to the exposure area of the next silicon wafer through the splicing objective lens exposure field.

In another case, the size of the mask and the size of the splicing direction of the exposure field of the objective lens are consistent, the size of the splicing direction of the exposure field of the spliced objective lens is not smaller than the size of the mask, but the size of the silicon wafer is larger than the size of the mask. With continued reference to fig. 23 based on the exposure apparatus d shown in fig. 22, in order to achieve effective exposure of a large-sized silicon wafer, an exposure apparatus e further comprises: an exposure system 60, a mask table and a motion table 61. Wherein the mask stage can adjust the movement of the mask plate in the horizontal plane; the moving stage 61 can adjust the movement of the photosensitive substrate 54 in the horizontal plane. Because the current mask plate pattern can be set as sub-mask plate patterns which can be respectively projected by the exposure fields of the projection objectives 51 to 53 (three sub-mask plate patterns are correspondingly configured to form the current mask plate pattern), the area to be exposed of the photosensitive substrate can be correspondingly set as sub-exposure areas projected by the exposure fields of the projection objectives 51 to 53, namely, the exposure field of the projection objective 51 corresponds to a plurality of sub-exposure areas, the exposure field of the projection objective 52 corresponds to a plurality of sub-exposure areas, and the exposure field of the projection objective 53 corresponds to a plurality of sub-exposure areas.

The exposure fields of the projection objectives 51 to 53 are configured in the same shape, and the exposure fields with the shapes and structural features as shown in fig. 5 to 9 can be used, and the hexagonal exposure field is taken as an example in the present embodiment. With reference to fig. 24, based on the exposure device d, the projection objectives 51 to 53 expose the fields of view to form sub-exposure region groups through projection exposure at the same time (in fig. 24, the silicon wafer is represented by a circle, the sub-exposure region groups formed during the exposure scanning process are represented by a square, the scanning tracks of the sub-exposure region groups are represented by line segments with arrows, and the three hexagonal spliced exposure fields of view are the sub-exposure region groups indicated by the square regions), and the sub-exposure region groups are formed by the projection objectives projecting the sub-reticle patterns to the sub-exposure regions through the exposure fields of view 51 to 53 at the same time. The exposure area in fig. 24 is not limited to the sub-exposure area and three hexagonal fields, and can be a plurality of fields, and the full field exposure of the whole silicon wafer is realized after splicing. In fig. 24, the exposure system 60 controls the motion stage 61 and the mask stage to move the silicon wafer or the photosensitive substrate and the reticle, so that the exposure fields of the projection objectives 51 to 53 are combined and the reticle pattern is exposed to the silicon wafer (i.e., the photosensitive substrate) along the scanning exposure direction, and the exposure scanning is performed according to the direction indicated by the arrow in the figure, thereby completing the stitching exposure process. The exposure system 60 may be adapted to perform the stitching exposure as follows:

during exposure, the split exposure light beam is irradiated to the current sub-mask pattern of the exposure field of the corresponding projection objective, and the corresponding sub-mask pattern is projected to the current sub-exposure area through the corresponding projection objective so as to scan and expose the current sub-exposure area group to complete the exposure pattern of the current exposure field;

and adjusting the motion platform to enable the photosensitive substrate to move to the next exposure field area to be exposed, and enabling the mask and the photosensitive substrate to move along the preset scanning exposure direction so as to continuously project the corresponding sub-mask pattern to the next sub-exposure area group to complete the exposure pattern of the next exposure field by scanning exposure of the next sub-exposure area group until all the exposure fields to be exposed of the photosensitive substrate are completed.

Under the other condition, the size of the mask pattern area is consistent with that of the silicon wafer pattern area, the size of the mask pattern area and that of the silicon wafer pattern area are both larger than the size of the splicing direction of the exposure field of the splicing objective, the exposure field of the splicing objective can only project part of mask patterns to part of areas of the silicon wafer, and the mask patterns need to be projected in a splicing mode to achieve splicing exposure. Based on the exposure apparatus d shown in fig. 22, with continued reference to fig. 25, in order to achieve effective exposure of the large-size silicon wafer and the large-size mask, an exposure apparatus f further includes: an exposure system 60', a motion stage 61, and a mask stage 62. The current mask plate pattern can be set as a sub-mask plate pattern group which can be respectively projected by the exposure field parts of the projection objectives 51 to 53 (three sub-mask plate pattern groups projected by the projection objectives 51 to 53 form the sub-mask plate pattern group, and the pattern configuration according to the large-size mask plate is formed by a plurality of sub-mask plate pattern groups), the area to be exposed of the photosensitive substrate can be correspondingly set as a sub-exposure area projected by the exposure field parts of the projection objectives 51 to 53, namely, the exposure field part of the projection objectives 51 corresponds to a plurality of sub-exposure areas, the exposure field part of the projection objectives 52 corresponds to a plurality of sub-exposure areas, the exposure field part of the projection objectives 53 corresponds to a plurality of sub-exposure areas, and the sub-exposure areas projected by the exposure field parts of the current projection objectives 51 to 53 form the current sub-exposure area group.

The exposure fields of the projection objectives 51 to 53 are arranged in the same shape, and the exposure fields having the shapes and structural features shown in fig. 5 to 9 may be used, and the hexagonal exposure field is taken as an example in the present embodiment. With reference to fig. 26, based on the exposure device f, the projection objectives 51 to 53 expose the field of view to simultaneously project and expose the current sub-reticle pattern set to form the current sub-exposure region set (in the exposure process of the exposure device f, the silicon wafer 54 is represented by a circle in fig. 26, the sub-exposure region set formed by projecting the sub-reticle pattern set in the exposure scanning process is represented by a square in the circle of the silicon wafer 54, the scanning track of the sub-exposure region set is represented by a line segment with an arrow in the circle of the silicon wafer 54, three hexagonal spliced exposure field of view are sub-exposure region sets indicated by square regions, the reticle 50 is represented by a circle, the sub-reticle pattern set in the exposure scanning process is represented by a square in the circle of the reticle 50, the projection track of the sub-reticle pattern set is represented by a line segment with an arrow in the circle of the reticle 50, and three hexagonal spliced exposure field of view l2 is an illustration of the sub-exposure region set, three hexagonal stitching exposure fields l1 are schematic diagrams of sub-reticle pattern sets), and a sub-exposure area set is formed by projecting the sub-reticle pattern set to a corresponding sub-exposure area through the exposure fields 51 to 53 by a projection objective. The exposure system 60' controls the motion stage 61 and the mask stage 62 to synchronously move the silicon wafer or the photosensitive substrate, so that the exposure field combinations of the projection objectives 51 to 53 synchronously expose a plurality of sub-mask pattern groups to the sub-exposure region groups of the corresponding silicon wafer (i.e. the photosensitive substrate) along the scanning exposure direction at the same time, and the exposure scanning is performed according to the direction indicated by the arrow in the figure, thereby completing the splicing exposure process. The exposure system 60' may be adapted to perform the stitching exposure as follows:

during exposure, the split exposure light beam is irradiated to the current sub-mask pattern group of the exposure field of the corresponding projection objective, the corresponding sub-mask pattern group is projected to the current sub-exposure area through the projection objective, and the photosensitive substrate and the mask are moved along the preset scanning exposure direction through the motion table and the mask table so as to complete exposure patterns on the current sub-exposure area group;

adjusting the motion table and the mask table to enable the photosensitive substrate and the mask to move along a preset scanning exposure direction so as to continuously project the corresponding sub-mask pattern group to the next sub-exposure area group and complete exposure patterns for the next sub-exposure area group; and then completing splicing exposure of all the required exposure areas of the photosensitive substrate by synchronous scanning motion.

The exposure devices d, e and f can be used together with the adjusting device to realize light path modulation. Based on the various types of adjusting elements described in the adjusting device, that is, the magnification decoupling element, the first wedge element group, the second wedge element group, and the flat plate element, one element or a plurality of elements may be configured on any exposure device d or e as required. Taking an exposure apparatus d as an example, and referring to fig. 27, an exposure apparatus g with an adjustment device added thereto includes: projection objectives 71 to 73 of a pair of magnification decoupling elements or a pair of magnification decoupling element groups (not shown in the figure) are configured, and magnification compensation of each objective is realized by manually adjusting the spatial distance between lenses of the magnification decoupling elements or the optical lenses of the magnification decoupling element groups; first wedge elements j1 to j3 are sequentially arranged between the mask plate 50 and the projection objectives 71 to 72, and the first wedge elements j1 to j3 can be controlled to translate along an inclined plane through a manual operation or a first wedge element control unit 401 so as to realize focal plane adjustment of each objective; the flat plate elements p1 to p3 are sequentially disposed between the projection objectives 71 to 73 and the photosensitive substrate, and the rotation of the flat plate elements p1 to p3 about the X axis or the Y axis, respectively, can be controlled by a manual or flat control unit 403 to achieve the dot alignment of the respective objectives.

In other embodiments, the projection objectives 71 to 72 may also include wedge elements, and the wedge elements may be tilted to adjust the asymmetric magnification error of the objective, so as to eliminate the different magnification errors of the single lens in the X and Y directions.

The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes and modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention.

Claims

1. An exposure apparatus, comprising: mask version, at least a set of projection objective and sensitization base plate, projection objective includes: a first imaging lens and a second imaging lens; the exposure light beam can irradiate the pattern of the mask plate for imaging, an intermediate image surface is formed through the first imaging lens, and the exposure light beam is exposed on the photosensitive substrate through the second imaging lens; the first imaging lens and the second imaging lens are symmetrical relative to the middle image plane lens.

2. The exposure apparatus according to claim 1, wherein the projection objective has only one group.

3. The exposure apparatus according to claim 1, wherein the projection objective has 1 to N groups, the exposure apparatus further comprising: a light splitting system and 1 to N lighting units; the light splitting system is suitable for equally dividing a light source into 1 to N light source beams to correspondingly enter the 1 to N lighting units; the illumination unit is suitable for homogenizing and shaping the corresponding light source light beams to form 1 to N exposure light beams after corresponding light splitting, and the 1 to N exposure light beams after light splitting can irradiate corresponding patterns of the mask and are incident to 1 to N groups of corresponding projection objectives; n is a natural number greater than or equal to 2.

4. The exposure apparatus according to claim 2, wherein the reticle pattern is disposed so as to be projectable by a projection objective exposure field, and the region to be exposed of the photosensitive substrate is correspondingly disposed as a sub-exposure region projected by the projection objective exposure field; the exposure apparatus further includes: an exposure system, a motion stage and a mask stage; the exposure system is adapted to: when in exposure, the exposure light beam irradiates the current mask pattern of the exposure field of the projection objective, and the irradiated mask pattern is synchronously scanned and projected to the current sub-exposure area on the horizontal plane through the mask and the photosensitive substrate by the projection objective so as to form the current sub-exposure pattern; synchronously scanning and moving the mask and the photosensitive substrate on the horizontal plane according to an S-shaped track to continuously project the illuminated pattern of the mask to the next sub-exposure area so as to complete the splicing exposure of the sub-exposure area in the current exposure field, thereby realizing the exposure of the current exposure field; adjusting the moving table and the mask table to enable the mask and the photosensitive substrate to move relatively in the horizontal plane so as to continuously project the mask pattern to a sub-exposure area of the next exposure field to complete splicing exposure of the next exposure field; until all exposure fields needing exposure on the photosensitive substrate are exposed.

5. The exposure apparatus according to claim 2, wherein the reticle pattern is provided as a sub-reticle pattern that is projectable by a projection objective exposure field, and the region to be exposed of the photosensitive substrate is correspondingly provided as a sub-exposure region that is projectable by the projection objective exposure field; the exposure apparatus further includes: an exposure system, a motion stage and a mask stage; the exposure system is adapted to: when in exposure, the exposure light beam irradiates the current sub-mask pattern of the exposure field of the projection objective, the mask pattern is projected to the current sub-exposure area through the projection objective, and the mask and the photosensitive substrate synchronously scan and move on the horizontal plane to form the current sub-exposure pattern; and adjusting the moving table and the mask table to enable the mask and the photosensitive substrate to synchronously scan and move on the horizontal plane according to the S-shaped track so as to continuously project the mask pattern to the next sub-exposure area to form the next sub-exposure pattern, so that the scanning splicing exposure of all the required exposure areas of the photosensitive substrate is realized.

6. The exposure apparatus according to claim 3, wherein the reticle pattern is correspondingly configured as a 1 st to an Nth sub-reticle pattern projected by 1 to N sets of projection objective exposure fields, respectively, the region to be exposed of the photosensitive substrate is correspondingly configured as a sub-exposure region set projected by the 1 to N sets of projection objective exposure fields, the sub-exposure region set being composed of 1 st to N sub-exposure regions projected by the 1 to N sets of projection objective exposure fields simultaneously; the exposure apparatus further includes: an exposure system, a motion stage and a mask stage; the exposure system is adapted to: during exposure, the 1 to N split exposure beams respectively irradiate the 1 st to N th sub-mask patterns corresponding to the 1 to N groups of projection objective exposure fields, the 1 st to N th sub-mask patterns are projected to the current sub-exposure area group through the 1 to N groups of projection objectives, and the mask and the photosensitive substrate synchronously scan and move on the horizontal plane to form the current exposure field pattern; adjusting the moving table to enable the mask and the photosensitive substrate to move relatively in the horizontal plane so as to continuously project the mask pattern to the next exposure field area to complete exposure of the next exposure field; until all exposure fields needing exposure on the photosensitive substrate are exposed.

7. The exposure apparatus according to claim 3, wherein the reticle patterns are correspondingly arranged as sub-reticle pattern sets projected by 1 to N sets of projection objective exposure fields respectively, the sub-reticle pattern sets are composed of 1 to N sub-reticle patterns projected by the 1 to N sets of projection objective exposure fields simultaneously, the region to be exposed of the first photosensitive substrate is correspondingly arranged as a sub-exposure region set projected by the 1 to N sets of projection objective exposure fields, the sub-exposure region set is composed of 1 to N sub-exposure regions projected by the 1 to N sets of projection objective exposure fields simultaneously; the exposure apparatus further includes: an exposure system, a motion stage and a mask stage; the exposure system is adapted to: during exposure, 1 to N split exposure beams respectively irradiate the sub-mask pattern groups corresponding to the exposure fields of the 1 to N groups of projection objectives, the current sub-mask pattern group is projected to the current sub-exposure area group through the 1 to N groups of projection objectives, and the mask and the photosensitive substrate synchronously scan and move on the horizontal plane to form a current sub-exposure pattern; and adjusting the motion table and the mask table to enable the mask and the photosensitive substrate to synchronously scan and move on the horizontal plane according to the S-shaped track so as to continuously project the next sub-mask pattern group to the next sub-exposure area group to form the next sub-exposure pattern, thereby realizing the scanning splicing exposure of all the required exposure areas of the photosensitive substrate.

8. The exposure apparatus according to any one of claims 4 to 7, wherein the projection objective has an exposure field of view with a hexagonal, trapezoidal, triangular, parallelogram or rhomboid shape.

9. The exposure apparatus according to claim 1, wherein the first imaging lens is composed of 1 to M first lenses, and the second imaging lens is composed of 1 to M second lenses; the 1 to M first lenses and the 1 to M second lenses are the same and are symmetrically arranged about the intermediate image plane lens, and M is a natural number greater than or equal to 2.

10. The exposure apparatus according to claim 1, wherein the projection objective has a magnification of plus one, and object-side numerical apertures are the same; the magnification of the first imaging lens is minus one time, and the object image side numerical apertures are the same; the magnification of the second imaging lens is negative one time, and the object image side numerical apertures are the same.

11. An adjusting apparatus suitable for the exposure apparatus according to claim 1, comprising: the adjusting element is at least arranged at a position where at least one exposure light beam passes between the projection objective and the mask plate, in the projection objective and between the projection objective and the photosensitive substrate; the adjustment system is adapted to adjust the adjustment element to perform optical path adjustment of the exposure beam.

12. The adjustment device of claim 11, wherein the adjustment system comprises: a pair of magnification decoupling adjustment units, the adjustment element comprising: a pair magnification decoupling element; the symmetrical magnification decoupling element at least comprises a first symmetrical magnification decoupling element and a second symmetrical magnification decoupling element, the first symmetrical magnification decoupling element is arranged in the first imaging lens, and the second symmetrical magnification decoupling element is arranged in the second imaging lens; an air distance is reserved between the first symmetrical multiplying power decoupling element and the second symmetrical multiplying power decoupling element; the symmetrical multiplying power decoupling adjustment unit is suitable for adjusting the first symmetrical multiplying power decoupling element and the second symmetrical multiplying power decoupling element to translate along an optical axis, and the air distance is modulated to correct multiplying power errors of the projection objective.

13. The adjustment device of claim 11, wherein the adjustment system comprises: a first wedge element control unit, the adjustment element comprising: a first wedge element set; the first wedge member set includes: a first wedge member having a first inclined surface and a first oblique angle and a second wedge member having a second inclined surface and the first oblique angle; the first wedge-shaped element is assembled between the projection objective and the mask, between the first imaging lens and the intermediate image plane, between the intermediate image plane and the second imaging lens or between the projection objective and the photosensitive substrate; the first wedge element control unit is suitable for controlling the relative motion between the first wedge element and the second wedge element along the inclined surface so as to adjust the difference of focal planes of the corresponding projection objectives.

14. The adjustment device of claim 11, wherein the adjustment system comprises: a second wedge element control unit, the adjustment element comprising: a second wedge element set; the second wedge member set includes: a third wedge element having a third slope and a second bevel and a fourth wedge element having a fourth slope and the second bevel; the second wedge element is assembled between the projection objective and the mask, between the first imaging lens and the intermediate image plane, between the intermediate image plane and the second imaging lens or between the projection objective and the photosensitive substrate; the second wedge element control unit is adapted to control the second wedge element group to tilt to adjust an asymmetric magnification error of the corresponding projection objective.

15. The adjustment device of claim 11, wherein the adjustment system comprises: a tablet control unit, the adjustment element comprising: a plate member; the flat plate element is arranged between the projection objective and the mask plate, between the first imaging lens and the intermediate image plane, between the intermediate image plane and the second imaging lens or between the projection objective and the photosensitive substrate; the flat panel control unit is suitable for controlling the flat panel element to rotate around an X axis relative to a Y axis and an optical axis plane or rotate around a Y axis direction relative to the X axis and the optical axis plane so as to adjust the image point to translate on the X axis or the Y axis.