TW200307182A

TW200307182A - Exposing method, exposing device and manufacturing method for device

Info

Publication number: TW200307182A
Application number: TW092108905A
Authority: TW
Inventors: Kei Nara
Original assignee: Nikon Corp
Priority date: 2002-05-22
Filing date: 2003-04-17
Publication date: 2003-12-01
Also published as: CN1459671A; TWI278722B; KR100979454B1; CN100524024C; KR20030091055A

Abstract

An exposing method, exposing device and manufacturing method for devices that can keep precision with a decreased processing time and can improve throughput are provided. The exposing device is provided with alignment systems, laser interferometers and a control device. The alignment systems detect alignment marks arranged on a sensitization substrate. There are at least 3 alignment systems juxtaposed in a non-scanning direction (i.e. Y direction). The laser interferometers is juxtaposed in X direction and can detect the position of the sensitization substrate in Y direction. The alignment systems align the sensitization substrate with respect to the mask. The control device switches the laser interferometer according to the position of the sensitization substrate and chooses one of the laser interferometers corresponding to the pattern region that to be exposed on the sensitization substrate, and then the alignment systems align the substrate according to the detecting position of the laser interferometer.

Description

200307182 五、發明說明（1) [發明所屬之技術領域] 本發明關於一種曝光方法，一面將光罩和基板作同光於基板上。 [先前技術] 液晶顯示元件和半導體圖案轉印於感光基板上，即造。該微影法工程中所使用基板作2維移動之基板載物維移動之光罩載物台，將光動光罩載物台及基板載物台於感光基板上。作為曝光装體同時轉印於感光基板上^ 光罩載物台和基板載物台同續地轉印於感光基板上之掃製造液晶顯示元件時，由於掃描型曝光裝置被主要應用掃描型曝光裝置有配置投影區域在掃描方向上進行域的各個末端（接合部）在覆’即所謂多透鏡方式的掃型曝光裝置）。多透鏡方式維持良好的成像特性一面並曝光區域（圖案形成區域）法、曝光裝置及元件製造方步移動一面將光罩的圖案曝元件藉由將在光罩上形成之所謂的微影法之手法而被製的曝光裝置，具有載置感光台、載置有圖案之光罩作2 罩上形成之圖案一面逐次移一面通過投影光學系統轉印置，主要有將光罩的圖案全一次型曝光裝置，和一面將步掃描一面將光覃的圖案連描型曝光裝置2種。其中在顯示區域的大型化的要求，〇多個投影光學系統以使鄰接所定量位移且使鄰接投影區與掃描方向直交之方向上重描型曝光裝置（多透鏡掃描的掃描型曝光裝置能夠一面不使裝置大型化而得到大的。位於該掃描型曝光裝置之200307182 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to an exposure method in which a photomask and a substrate are made to co-expose on a substrate. [Prior art] A liquid crystal display element and a semiconductor pattern are transferred onto a photosensitive substrate, that is, manufactured. In this lithography process, the substrate is used as a two-dimensionally moved substrate stage. The dimensionally moved mask stage is a photomask stage and a substrate stage on a photosensitive substrate. Simultaneous transfer as an exposure device on a photosensitive substrate ^ Photomask stage and substrate stage are transferred onto a photosensitive substrate simultaneously. When manufacturing a liquid crystal display element, a scanning exposure device is mainly used for scanning exposure. The apparatus includes a so-called multi-lens scanning-type exposure apparatus in which the projection region is covered with each end (junction) of the field in the scanning direction. The multi-lens method maintains good imaging characteristics while exposing the area (pattern formation area) method, the exposure device, and the device manufacturing steps while moving the pattern exposure device of the photomask through the so-called lithography method that will be formed on the photomask. The exposure device made by the method has a photosensitive stage and a patterned mask on the mask. The pattern formed on the 2 masks is transferred one by one by the projection optical system, and the pattern of the mask is all-once. There are two types of exposure devices, and a continuous pattern exposure device that scans light patterns while scanning step by step. Among them, in order to increase the size of the display area, a plurality of projection optical systems are required to shift the adjacent quantitative displacements and make the adjacent projection areas perpendicular to the scanning direction. A re-exposure type exposure device (a multi-lens scanning type scanning exposure device can be It is large without increasing the size of the device. It is located in the scanning exposure device.

11246pif.ptd 第6頁11246pif.ptd Page 6

200307182 五、發明說明（2) 各投影光學系統的視野光闌，可為例如梯形，掃描方向的視野光闌之孔徑寬的合計通常被設定為相等。因此，鄰接之投影光學系統的接合部被重覆曝光，所以該掃描型曝光裝置具有使投影光學系統的光學像差和曝光照度平滑變化之優點。圖21所示為原來的多透鏡掃描型曝光裝置的一例〇如圖2 1所示，曝光裝置EXJ具備有支援光罩Μ 之光罩載物台MS Τ、支援感光基板之基板載物台P S T、將光罩載物台MST所支援的光罩Μ藉由曝光光E L進行照明之照明光學系統I L 、將藉由曝光光E L照明之光罩Μ的圖案的像投影於基板載物台P S Τ所支援的感光基板Ρ上之多個投影光學系統P L a〜P L g。投影曝光系統P L a 、P L c 、P L d、P L g和投影光學系統P L b 、P L d 、P L f成2列交錯狀排列，投影光學系統P L a〜P L g中的鄰接之投影光學系統彼此（例如投影光學系統P L a和P L b 、P L b和P L c )在X軸方向上被所定量移位元配置。而且，分別與投影光學系統P L a〜P L g對應之梯形投影區域的接合部在感光基板P上重覆。在光罩載物台MS T的上方，設有進行光罩Μ和感光基板Ρ之調正（alignment)的調正光學系統5 0 0 Α、 500B 。調正光學系統500A、500B可藉由不圖示的驅動機構在Y軸方向移動，在調正處理時進入照200307182 V. Description of the invention (2) The field diaphragm of each projection optical system can be, for example, trapezoidal. The total aperture width of the field diaphragm in the scanning direction is usually set to be equal. Therefore, the joints of adjacent projection optical systems are repeatedly exposed, so this scanning type exposure device has the advantage of smoothly changing the optical aberrations and exposure illuminance of the projection optical system. FIG. 21 shows an example of a conventional multi-lens scanning type exposure apparatus. As shown in FIG. 21, the exposure apparatus EXJ is provided with a mask stage MS T supporting a mask M and a substrate stage PST supporting a photosensitive substrate. 2. The illumination optical system IL that illuminates the photomask M supported by the photomask stage MST with the exposure light EL, and projects the image of the pattern of the photomask M illuminated by the light exposure EL on the substrate stage PST A plurality of projection optical systems PL a to PL g on the supported photosensitive substrate P. The projection exposure systems PL a, PL c, PL d, and PL g and the projection optical systems PL b, PL d, and PL f are arranged in a staggered pattern in two columns. The adjacent projection optical systems in the projection optical systems PL a to PL g are ( For example, the projection optical systems PL a and PL b, PL b and PL c) are arranged by the quantitative shift elements in the X-axis direction. Further, the bonding portions of the trapezoidal projection areas corresponding to the projection optical systems P L a to P L g are respectively overlapped on the photosensitive substrate P. Above the photomask stage MS T, there are provided alignment optical systems 5 0 A, 500B for performing alignment of the photomask M and the photosensitive substrate P. The alignment optical systems 500A and 500B can be moved in the Y-axis direction by a drive mechanism (not shown), and enter the photo during the alignment process.

11246pif.ptd 第7頁 200307182 五、發明說明（3) 明光學系統I L和光罩Μ之間，同時在掃描曝光時又從照明區域退避。調正光學系統5 0 0 A、5 0 0 Β檢測形成於光罩Μ之光罩調正標誌，同時將形成於感光基板 Ρ之基板調正標誌通過投影光學系統P L a及P L g檢測。另外，在基板載物台P S T上之一X側的末端設有在Y軸方向延伸之移動鏡5 0 2 a ，在一 Y側的末端設有在X軸方向延伸之移動鏡5 0 2 b ，在與這些移動鏡 5 0 2 a 、5 0 2 b分別對向之位置，分別設有藉由向移動鏡5 0 2 a 、5 0 2 b照射鐳射光，可檢測在基板載物台P S T的X軸方向及Y軸方向之位置的鐘射干涉儀 501a、501b。圖2 2A、B、C、D〜圖2 4A、B、C、D是用於說明使用曝光裝置E X J的調正處理程式及曝光處理程式之 if示。這裏是關於在感光基板P上形成4個元件（圖案形成區域）PA 1〜PA4之場合進行說明。如圖2 2A、B、C、D所示，在感光基板P上的圖案形成區域PA 1〜PA4之每一個的4角上形成有調正標諸。曝光裝置EXJ首先如圖2 2A所示，將感光基板P 上的第1圖案形成區域PA 1之一X側的2個基板調正標誌、m 1 、m 2 ，藉由調正光學系統5 0 0 A、5 0 0 B通過投影光學系統P L a及P L g而檢測。調正光學系統5 0 0 A、5 0 0 B同時也檢測與基板調正標諸m 1、m2對應光罩調正標誌（圖22A中不圖示）。接著11246pif.ptd Page 7 200307182 V. Description of the invention (3) Between the optical system IL and the mask M, and at the same time retreating from the illuminated area during scanning exposure. The alignment optical systems 500 A, 500 B detect the mask alignment marks formed on the mask M, and simultaneously detect the substrate alignment marks formed on the photosensitive substrate P through the projection optical systems P L a and P L g. In addition, a moving mirror 5 0 2 a extending in the Y-axis direction is provided at one end on the X side on the substrate stage PST, and a moving mirror 5 0 2 b extending in the X-axis direction is provided at the end on the Y side. At positions opposite to these moving mirrors 5 0 2 a and 50 2 b, respectively, laser light is irradiated to the moving mirrors 5 0 2 a and 50 2 b to detect the PST on the substrate stage. Clock radio interferometers 501a, 501b at positions in the X-axis direction and the Y-axis direction. Fig. 2 2A, B, C, D to Fig. 2 4A, B, C, and D are illustrations for explaining the adjustment processing program and exposure processing program using the exposure device E X J. Here, a case where four elements (pattern forming regions) PA 1 to PA 4 are formed on the photosensitive substrate P will be described. As shown in FIGS. 2A, 2B, C, and D, the calibration marks are formed on the four corners of each of the pattern forming areas PA1 to PA4 on the photosensitive substrate P. As shown in FIG. 2A, the exposure device EXJ firstly adjusts the two substrates on the X side of one of the first pattern forming areas PA 1 on the photosensitive substrate P by m1, m2, and adjusts the optical system 50. 0 A, 5 0 0 B are detected by the projection optical systems PL a and PL g. The alignment optical systems 5 0 A and 5 0 B also detect the mask alignment marks corresponding to the substrate alignment marks m 1 and m 2 (not shown in Figure 22A). then

11246pif.ptd 第8頁 200307182 五、發明說明（4) 如圖2 2B所示，感光基板P藉由基板載物台PST在一 X側移動，調正光學系統5 0 0 A、5 0 0 B將圖案形成區域P A 1的+ X側之2個基板調正標諸m 3、m 4 通過投影光學系統P L a及P L g檢測。此時，光罩Μ 也藉由光罩基板MS Τ進行移動，感光基板Ρ的基板調正標誌m 3、m 4所對應之光罩調正標誌和基板調正標諸m 3 、m 4 —起被檢測。接著如圖2 2 C所示，感光基板P藉由基板載物台P S T在一X側移動，調正光學系統5 0 0 A、5 0 0 B檢測感光基板P的第2圖案形成區域P A 2之基板調正標諸m 1 、m 2及與此對應之光罩調正標誌。接著如圖2 2 D所示，感光基板P在一 X側移動，調正光學系統5 0 0 A、5 0 0 B檢測圖案形成區域P A 2的基板調正標誌m 3、m 4及與此對應之光罩> 調正標誌。接著如圖2 3A所示，感光基板P藉由基板載物台P S T在一Y側步進移動，調正光學系統5 0 0 A、5 0 0 B檢測第3圖案形成區域P A 3之基板調正標諸m 3、m 4及與此對應之光罩調正標誌。接著如圖2 3 (b )所示，感光基板P在+ X側移動，調正光學系統 5 0 0 A、5 0 0 B檢測形成區域P A 3的基板調正標誌m 1 、m 2及與此對應之光罩調正標誌。接著如圖2 3 ( c )所示，感光基板P在+ X側移動，調正光學系統5 0 0 A、5 0 0 B檢測第4圖案形成區域P A 4的基板調正標誌m 3、m 4及與此對應之光罩調正標誌。11246pif.ptd Page 8 200307182 V. Description of the invention (4) As shown in Figure 2 2B, the photosensitive substrate P is moved on the X side by the substrate stage PST, and the optical system is adjusted 5 0 0 A, 5 0 0 B The two substrates on the + X side of the pattern forming area PA 1 are adjusted to m 3 and m 4 by the projection optical systems PL a and PL g. At this time, the reticle M is also moved by the reticle substrate MS T, and the reticle adjustment marks m 3 and m 4 corresponding to the reticle adjustment marks m 3 and m 4 of the photosensitive substrate P are m 3 and m 4 — From being detected. Next, as shown in FIG. 2C, the photosensitive substrate P is moved on the X side by the substrate stage PST, and the optical systems 5 0 A and 5 0 B are adjusted to detect the second pattern forming area PA 2 of the photosensitive substrate P The substrate adjustment marks m 1 and m 2 and corresponding mask adjustment marks. Next, as shown in FIG. 2D, the photosensitive substrate P is moved on the X side, and the substrate alignment marks m 3, m 4 of the detection pattern formation area PA 2 of the optical system 5 0 A, 5 0 B are adjusted, and the same Corresponding mask > Correction mark. Next, as shown in FIG. 2A, the photosensitive substrate P is moved stepwise on the Y side by the substrate stage PST, and the optical system 5 0 A, 5 0 B detects the substrate adjustment of the third pattern forming area PA 3 Positive markings m 3, m 4 and corresponding mask adjustment marks. Next, as shown in FIG. 2 (b), the photosensitive substrate P moves on the + X side, and the optical system 5 0 A, 5 0 B detects the substrate alignment marks m 1, m 2 and PA of the formation area PA 3. This corresponds to the mask adjustment mark. Next, as shown in FIG. 2 (c), the photosensitive substrate P moves on the + X side, and the optical system 5 0 A, 5 0 B detects the substrate alignment marks m 3, 4 of the fourth pattern forming area PA 4 4 and the corresponding mask adjustment mark.

11246pif.ptd 第9頁 200307182 五、發明說明（5) 接著如圖2 3D所示，感光基板P在+ X側移動，調正光學系統5 0 0 A 、5 0 0 B檢測圖案形成區域P A 4的基板調正標誌m 1 、m 2及與此對應之光罩調正標誌。如上所述，一面進行光罩Μ和感光基板P的步進移動，一面由2個調正光學系統5 0 0 A、5 0 0 Β檢測各圖案形成區域P A 1〜P A 4之各個基板調正標誌m 1〜m 4的位置資訊及光罩調正標誌的位置資訊。然後曝光裝置EXJ基於調正光學系統500A、500B 的檢測結果，求每個圖案形成區域的光罩Μ和感光基板 Ρ的位置誤差及位移、旋轉、定標（s c a 1 i n g )等像特性，從求得之誤差資訊算出修正值，並基於該修正值進行曝光處理。在進行曝光處理時，首先如圖2 4 A所示，使對最後進行調正處理之圖案形成區域P A 4的曝光處理被 ‘行。即，一面將支援感光基板P的基板載物台P S T 和支援光罩Μ的光罩載物台MST (圖2 4A中不圖示）在一 X方向作同步移動’一面藉由利用曝光光照明光罩 Μ，進行對感光基板Ρ的圖案形成區域ΡΑ4之曝光處理。當對圖案形成區域ΡΑ4之曝光處理結束後，如圖 2 4Β所示，為了進行對圖案形成區域ΡΑ 3之掃描曝光處理，設定光罩Μ和感光基板Ρ的位置。即，感光基板 Ρ在一X方向移動，同時光罩Μ (圖2 4Β中不圖不）為返回初始位置在+ X方向進行大的移動。然後，進行對圖案形成區域ΡΑ 3之掃描曝光處理。當對圖案形成區域Ρ A 3之掃描曝光處理結束後，如圖2 4 C所示，為了11246pif.ptd Page 9 200307182 V. Description of the invention (5) Next, as shown in FIG. 2 3D, the photosensitive substrate P is moved on the + X side, and the optical system 5 0 0 A and 5 0 0 B are detected to form a pattern PA 4 The substrate adjustment marks m 1 and m 2 and the mask adjustment marks corresponding thereto. As described above, the substrate M and the photosensitive substrate P are moved step by step, and the two substrates of the pattern forming areas PA 1 to PA 4 are detected by the two alignment optical systems 5 0 A and 5 0 B. Position information of the signs m 1 to m 4 and position information of the mask correction mark. Then, based on the detection results of the correction optical systems 500A and 500B, the exposure device EXJ finds image characteristics such as the position error and displacement, rotation, and calibration (sca 1 ing) of the photomask M and the photosensitive substrate P in each pattern forming area. A correction value is calculated from the obtained error information, and exposure processing is performed based on the correction value. When the exposure process is performed, first, as shown in FIG. 2A, the exposure process for the pattern forming area P A4 which is finally subjected to the correction process is performed. That is, the substrate stage PST supporting the photosensitive substrate P and the mask stage MST supporting the mask M (not shown in FIG. 24A) are moved synchronously in the X direction while using the exposure light to illuminate the light. The cover M performs an exposure process on the pattern formation area PA4 of the photosensitive substrate P. After the exposure processing to the pattern forming area PA4 is completed, as shown in FIG. 24B, the positions of the photomask M and the photosensitive substrate P are set in order to perform the scanning exposure processing on the pattern forming area PA3. That is, the photosensitive substrate P moves in the X direction, and at the same time, the photomask M (not shown in FIG. 24B) moves back to the initial position and moves in the + X direction. Then, a scanning exposure process is performed on the pattern formation area PA3. When the scanning exposure process for the pattern forming area P A 3 is completed, as shown in FIG. 2 4 C, in order to

11246pif.ptd 第10頁 200307182 五、發明說明（6) 進行對圖案形成區域P A 1之掃描曝光處理，設定光罩 Μ和感光基板P的位置。即，感光基板P藉由基板載物台P S Τ在+Χ方向進行大的移動的同時也在+ Υ方向移動，光罩Μ為返回初始位置在+ Χ側進行大的移動。然後，進行對圖案形成區域P A 1之掃描曝光處理。當對圖案形成區域P A 1之曝光處理結束後，如圖2 4 D所示，為了進行對圖案形成區域PA2之掃描曝光處理，設定光罩Μ和感光基板P的位置。即，感光基板P在一 X方向移動，同時光罩Μ為了返回初始位置在+ Χ方向進行大的移動。然後，進行對圖案形成區域P A 2之掃描曝光處理。這樣即分別完成對各圖案形成區域P A 1 〜PA4的曝光處理。而且曝光裝置EX J —面藉由鐳射干涉儀5 0 1 a' 5 0 1 b檢測感光基板P的位置一面藉由調正光學系統5 0 0 A、5 0 0 B依次檢測設于圖案形成區域P A1〜PA4的每一個之四角的調正標諸ml〜m4。具體地說，曝光裝置EXJ將基板載物台PST配置於所定位置，並將感光基板上的第1圖案形成區域PA 1 的一X側之2個基板調正標諸m 1 、m 2及與此對應之不圖示的光罩調正標誌，藉由調正光學系統5 0 0 A、 5 0 Ο B通過投影光學系統P L a及P L g檢測。接著，曝光裝置EXJ移動基板載物台P ST，並藉由調正光學系統500A、500B將圖案形成區域PA1 之+ X側的2個基板調正標誌m 4、m 3通過投影光學11246pif.ptd Page 10 200307182 V. Description of the invention (6) Scanning and exposure processing is performed on the pattern forming area P A 1, and the positions of the mask M and the photosensitive substrate P are set. That is, the photosensitive substrate P is moved in the + X direction at the same time as the substrate stage P S T is moved in the + X direction, and the photomask M is moved in the + X side to return to the initial position. Then, a scanning exposure process is performed on the pattern formation area P A 1. After the exposure processing to the pattern forming area PA1 is completed, as shown in FIG. 24D, the positions of the photomask M and the photosensitive substrate P are set in order to perform the scanning exposure processing on the pattern forming area PA2. That is, the photosensitive substrate P is moved in an X direction, and the photomask M is moved largely in the + X direction in order to return to the initial position. Then, a scanning exposure process is performed on the pattern formation area P A 2. This completes the exposure processing for each of the pattern forming regions P A 1 to PA4. Moreover, the exposure device EX J detects the position of the photosensitive substrate P by a laser interferometer 5 0 1 a '5 0 1 b, and sequentially adjusts the optical systems 5 0 0 A and 50 0 B to detect the position of the photosensitive substrate P. The calibration of the four corners of each of P A1 ~ PA4 is ml ~ m4. Specifically, the exposure device EXJ arranges the substrate stage PST at a predetermined position, and adjusts the two substrates on the X side of the first pattern forming area PA 1 on the photosensitive substrate to m 1, m 2, and The corresponding mask adjustment marks (not shown) are detected by the projection optical systems PL a and PL g by the adjustment optical systems 500 A and 50 B. Next, the exposure device EXJ moves the substrate stage P ST and adjusts the two substrate alignment marks m 4 and m 3 on the + X side of the pattern forming area PA1 by the alignment optical systems 500A and 500B through the projection optics.

11246pif.ptd 第11頁 200307182 五、發明說明（7) 系統P L a及P L g檢測。在進行標諸檢測中，鑛射干涉儀檢測基板載物台P S T (感光基板P )的位置。當檢測第1圖案形成區域P A 1的調正標誌m 1〜m 4 後，曝光裝置EXJ與第1圖案形成區域PA1的調正標諸、m 1〜m 4的檢測動作同樣，移動基板載物台P S T ，藉由調正光學系統5 0 0 A、5 0 0 B檢測第2圖案形成區域P A 2的基板調正標誌m 1 、m 2及與此對應之光罩調正標誌，接著檢測基板調正標誌m 3、m 4。此時鐳射干涉儀也檢測感光基板P的位置。以下，曝光裝置E X J同樣地依次檢測第3 、第4圖案形成區域PA3、PA4的基板調正標諸ml〜m4。如上所述，曝光裝置EX J —面反復進行光罩Μ和感光基板Ρ的步進移動，一面藉由鐳射干涉儀檢測感光基&板Ρ及光罩Μ的位置並檢測各圖案形成區域P A 1〜 P A 4的各個調正標諸m 1〜m 4。然後，曝光裝置E X J基於調正光學系統5 0 0 A、5 0 0 B的檢測結果，求每個圖案形成區域的光罩Μ和感光基板P的位置誤差及位移、旋轉、定標等像特性，從該求得之誤差資訊算出修正值，並基於該修正值進行曝光處理。在進行曝光處理時，對最後進行調正處理之圖案形成區域P A 4的曝光處理被進行。即，一面將支援感光基板P的基板載物台P S T和支援光罩Μ的光罩載物台MS T在X 軸方向作同步移動，一面藉由利用曝光光照明光罩Μ，進行對感光基板Ρ的圖案形成區域ΡΑ4之曝光處理。11246pif.ptd Page 11 200307182 V. Description of the invention (7) System P L a and P L g detection. In the standard detection, the mine shot interferometer detects the position of the substrate stage P S T (photosensitive substrate P). When the adjustment marks m 1 to m 4 of the first pattern formation area PA 1 are detected, the exposure device EXJ performs the same detection operation as the adjustment marks m 1 to m 4 of the first pattern formation area PA 1 to move the substrate carrier. The stage PST detects the substrate alignment marks m 1 and m 2 of the second pattern forming area PA 2 by the alignment optical systems 5 0 A and 5 0 0 B, and then detects the substrate alignment marks, and then detects the substrate. Adjust the marks m 3 and m 4. At this time, the laser interferometer also detects the position of the photosensitive substrate P. Hereinafter, the exposure apparatus E X J similarly sequentially detects the substrate alignment marks ml to m4 of the third and fourth pattern forming areas PA3 and PA4. As described above, the exposure device EX J repeats the stepwise movement of the mask M and the photosensitive substrate P, and detects the positions of the photosensitive substrate & plate P and the mask M by a laser interferometer, and detects each pattern formation area PA. Each adjustment of 1 to PA 4 is m 1 to m 4. Then, based on the detection results of the correction optical systems 5 0 A and 5 0 B, the exposure device EXJ finds image characteristics such as the position error, displacement, rotation, and calibration of the mask M and the photosensitive substrate P in each pattern formation area. , Calculate a correction value from the obtained error information, and perform exposure processing based on the correction value. When the exposure processing is performed, the exposure processing is performed on the pattern formation area P A 4 which is finally subjected to the correction processing. In other words, the substrate stage PST supporting the photosensitive substrate P and the mask stage MS T supporting the mask M are moved in the X-axis direction simultaneously, and the photosensitive substrate P is illuminated by exposing the mask M with exposure light. Exposure processing of the pattern forming area PA4.

11246pif.ptd 第12頁 200307182 五、發明說明（8) 但是，上述之原來的曝光裝置及曝光方法會產生以上所述的問題。上述之原來的方法為了曝光處理4個圖案形成區域 (元件）PA1〜PA4 ，需要一面將光罩Μ和感光基板Ρ做同步移動一面進行8次調正標誌檢測動作，調正處理所需時間長。要得到更多的從1片感光基板Ρ開始製造的元件，調正處理時間變得更長。當調正處理時間變長時，曝光裝置整體的生產性就低下。另一方面，為了縮短調正處理時間，考慮過要減少檢測之調正標誌的數量，也考慮過要將藉由1個圖案形成區域檢測之調正標誌的數目從上述的4個減至2個進行調正處理，但是當減少檢測之調正標誌的數目後，定標、旋轉或正交度等像特性不能精度良好地被檢測，會招&致調正精度的低下。調正精度一旦低下，製造的元件之圖案精度就低下。而且，為一種藉由错射干涉儀一面檢測感光基板Ρ (圖案形成區域P A 1〜Ρ A 4 )的位置一面檢測與各圖案形成區域PA 1〜PA4對應之調正標誌、ml〜m 4後，再對各個圖案形成區域PA 1〜PA4進行曝光處理之構成。當使感光基板P大型化時，為了進行藉由鐳射干涉儀之各圖案形成區域PA 1〜PA4的位置檢測，有必要伴隨感光基板P的大型化而使移動鏡也大型化，即長大化。但是使移動鏡長大化會產生移動鏡的反射面撓曲等加工精度上的問題。也有考慮過使短移動鏡11246pif.ptd Page 12 200307182 V. Description of the Invention (8) However, the above-mentioned original exposure device and exposure method may cause the problems described above. The original method described above requires 8 photo-alignment mark detection operations while simultaneously moving the photomask M and the photosensitive substrate P in order to expose and process the four pattern-formed areas (elements) PA1 to PA4. The time required for the process is long. . To obtain more elements manufactured from one photosensitive substrate P, the alignment processing time becomes longer. As the correction processing time becomes longer, the productivity of the entire exposure apparatus is lowered. On the other hand, in order to shorten the adjustment processing time, it has been considered to reduce the number of detected correction marks, and it has also been considered to reduce the number of correction marks detected by one pattern formation area from the above four to two. Each of them performs the correction processing, but after reducing the number of detected correction marks, image characteristics such as calibration, rotation, or orthogonality cannot be detected with high accuracy, which will cause a decrease in the correction accuracy. Once the adjustment accuracy is lowered, the pattern accuracy of the manufactured component is lowered. In addition, it is a type of interferometer that detects the position of the photosensitive substrate P (pattern forming areas PA 1 to P A 4) while detecting the alignment marks corresponding to each of the pattern forming areas PA 1 to PA 4. Then, an exposure process is performed on each of the pattern forming regions PA 1 to PA 4. In order to increase the size of the photosensitive substrate P, in order to detect the positions of the pattern forming areas PA 1 to PA 4 by the laser interferometer, it is necessary to increase the size of the movable mirror along with the increase in the size of the photosensitive substrate P, that is, to grow it. However, growing the moving mirror causes problems in processing accuracy such as the deflection of the reflecting surface of the moving mirror. Also considered making short moving mirrors

11246pif.ptd 第13頁 200307182 五、發明說明（9) 與各個圖案形成區域對應多個設置，同時對應這些移動鏡設置多個鐳射干涉儀，一面替換這些多個鐳射干涉儀中用於感光基板P (圖案形成區域）的位置檢測之鐳射干涉儀一面進行位置檢測，但是有時會發生替換誤差，不能進行精度良好的位置檢測。 [發明内容] 本發明之目的是提供一種鑒於這種情況形成的，一面維持精度一面縮短調正處理時間，並使生產性提高之曝光方法、曝光裝置及元件製造方法。為了解決上述課題，本發明採用與實施例所示的圖 1〜圖2 0對應之以下構成。本發明的曝光方法是一種一面將光罩（Μ )和基板 (Ρ)在第1方向（X)上同步移動一面對基板（Ρ) ¥光光罩（Μ )的圖案之曝光方法，其特徵是：分別與設於基板（Ρ )上的多個調正標誌（m 1〜m 6 )對向、同時在與第1方向（X)交叉的第2方向（Y)上至少有3個並列配置之多個調正系統（A L 1〜A L 6 )檢測多個調正標誌（m 1〜m 6 )，並基於該檢測結果使光罩（Μ )和基板（P )位置吻合。另外，本發明的曝光裝置（ΕΧ)是一種一面將光罩（Μ)和基板（Ρ)在第1方向（X)上同步移動一面對基板（Ρ)曝光光罩（Μ)的圖案之曝光裝置，具有分別檢測設於基板（Ρ )上的多個位置之調正標誌 (ml〜m6)的多個調正系統（AL1〜AL6)，11246pif.ptd Page 13 200307182 V. Description of the invention (9) There are multiple settings corresponding to each pattern forming area, and multiple laser interferometers are set corresponding to these moving mirrors. One side replaces these multiple laser interferometers for the photosensitive substrate P (Pattern forming area) The position detection is performed by the laser interferometer. However, a replacement error may occur, and the position detection with high accuracy cannot be performed. [Disclosure of the Invention] An object of the present invention is to provide an exposure method, an exposure apparatus, and a device manufacturing method which are formed in view of this situation, while shortening a correction processing time while maintaining accuracy and improving productivity. In order to solve the above problems, the present invention adopts the following configurations corresponding to FIGS. 1 to 20 shown in the embodiment. The exposure method of the present invention is an exposure method in which the photomask (M) and the substrate (P) are simultaneously moved in the first direction (X) while the pattern of the photomask (M) is faced to the substrate (P). It is characterized in that it is opposed to a plurality of adjustment marks (m 1 to m 6) provided on the substrate (P), and at least three in the second direction (Y) crossing the first direction (X) at the same time. A plurality of alignment systems (AL 1 to AL 6) arranged in parallel detects a plurality of alignment marks (m 1 to m 6), and based on the detection results, the positions of the photomask (M) and the substrate (P) match. In addition, the exposure device (EX) of the present invention is a pattern that simultaneously moves the photomask (M) and the substrate (P) in the first direction (X) while exposing the pattern facing the substrate (P) exposure mask (M). The exposure device has a plurality of adjustment systems (AL1 to AL6) that detect adjustment marks (ml to m6) at a plurality of positions provided on the substrate (P),

11246pif.ptd 第14頁 200307182 五、發明說明（ίο) 其特徵是：調正系統（AL 1〜AL6)在與第1方向 (X)交叉的第2方向（Y)至少並列配置有3個。如利用本發明，在對光罩和基板的掃描方向即第1 方向交叉之非掃描方向即第2方向上，至少並列配置3 個調正系統，所以無需減少應檢測之調正標誌的數目，就能與原來相比減少調正標誌的檢測動作次數。因此可一面維持調正精度一面縮短調正處理時間。本發明的元件製造方法的特徵是：包括使用上述說明的曝光方法或上述說明的曝光裝置（E X )，將描繪於光罩（M)的元件圖案曝光於基板（P)之工程（2 0 4)、將該曝光基板（P )顯像之工程（2 0 4 )。如利用本發明，藉由以高精度進行調正處理後再進行曝光處理，可提高製造的元件圖案精度。另外，調正處理時間被縮短，所以能夠提高元件製造時的生產性。本發明的曝光方法是一種將光罩（M)和基板（P )在第1方向（X)做同步移動，對基板（P)曝光光罩（Μ )的圖案之曝光方法，其特徵是：將基板（P ) 分割為多個曝光區域（ΡΑ1〜ΡΑ9)的分區（BR 1〜BR3)，在多個曝光區域（ΡΑ1〜ΡΑ9)的每個分區（BR1〜BR3)上使光罩（Μ)和基板 (Ρ )位置吻合之後，將光罩（Μ)的圖案在基板（Ρ )上曝光。如利用本發明，為一種將在基板上曝光之曝光區域 (圖案形成區域）分割為多個分區，並在每分區上依次11246pif.ptd Page 14 200307182 V. Description of the invention (ίο) It is characterized in that at least three alignment systems (AL 1 to AL6) are arranged side by side in the second direction (Y) crossing the first direction (X). According to the present invention, at least three adjustment systems are arranged in parallel in a non-scanning direction, that is, a second direction, in which the scanning direction of the photomask and the substrate is the first direction, so there is no need to reduce the number of adjustment marks to be detected. It is possible to reduce the number of detection operations of the correction mark compared to the original. Therefore, the adjustment processing time can be shortened while maintaining the adjustment accuracy. The element manufacturing method of the present invention is characterized by including a process of exposing an element pattern drawn on a photomask (M) to a substrate (P) using the above-explained exposure method or the above-mentioned exposure apparatus (EX) (2 0 4 ), A process (2 0 4) of developing the exposed substrate (P). According to the present invention, it is possible to improve the accuracy of a pattern of a manufactured element by performing an exposure process after performing a correction process with high accuracy. In addition, since the adjustment processing time is shortened, productivity at the time of component manufacturing can be improved. The exposure method of the present invention is an exposure method in which the photomask (M) and the substrate (P) are moved synchronously in the first direction (X) to expose the pattern of the photomask (M) on the substrate (P), and is characterized by: The substrate (P) is divided into partitions (BR 1 to BR 3) of a plurality of exposure areas (PA1 to PA9), and a photomask (M) ) And the substrate (P) match, the pattern of the photomask (M) is exposed on the substrate (P). According to the present invention, an exposure area (pattern forming area) exposed on a substrate is divided into a plurality of partitions, and each partition is sequentially

11246pif.ptd 第15頁 200307182 五、發明說明（11) 進行調正（使位置吻合）處理及曝光處理之構成，所以即使基板大型化，也可將基板分割為多個分區而分別進行處理，可在各個分區的每一個上進行精度良好地調正處理及曝光處理。而且，對各分區之上述處理（調正處理及曝光處理）的位置檢測動作可不切換多個位置檢測裝置，藉由1個位置檢測裝置即可進行，所以在對1個分區之處理（調正處理及曝光處理）中不產生裝置的切換誤差。本發明的曝光裝置（EX)是一種將光罩（M)和基板（P)在第1方向（X)同步移動，對基板（P) 曝光光罩（M)的圖案之曝光裝置，其特徵是：包括在第1方向（X )上並列配置，可檢測在與基板（P )的第1方向（X)交叉之第2方向（Y)上的位置之多個位^置檢測裝置（P y 1〜P y 3 )、對光罩（Μ )調正基板（Ρ )之調正部（A L )、按照基板（Ρ )的位置，控制切換多個位置檢測裝置（P y 1〜P y 3 )，同時對應在基板（P)曝光之曝光區域（PA 1〜PA 9 )，選擇多個位置檢測裝置（P y 1〜P y 3 )中的 1個，基於該位置檢測裝置的檢測位置藉由調正部（A L )調正曝光之控制裝置（C〇N T )。如利用本發明，將位置檢測裝置在掃描方向即第1 方向上多個並列配置，並按照基板的位置切換控制多個位置檢測裝置，所以即使移動鏡短，也可藉由按照基板的位置切換位置檢測中所用的位置檢測裝置，在多個曝11246pif.ptd Page 15 200307182 V. Description of the invention (11) The structure of the adjustment (matching the position) and the exposure process, so even if the substrate is large, the substrate can be divided into multiple partitions and processed separately. Correction processing and exposure processing with good accuracy are performed on each of the divisions. In addition, the position detection operation of the above-mentioned processing (correction processing and exposure processing) of each zone can be performed without switching multiple position detection devices, and can be performed by one position detection device. Therefore, the processing (adjustment of one zone) is performed. Processing and exposure processing), no device switching error occurs. The exposure device (EX) of the present invention is an exposure device that synchronously moves the photomask (M) and the substrate (P) in the first direction (X) to expose the pattern of the photomask (M) to the substrate (P). Yes: A plurality of position detection devices (P) including a parallel arrangement in the first direction (X) and capable of detecting a position in the second direction (Y) crossing the first direction (X) of the substrate (P) y 1 ~ P y 3), the adjustment unit (AL) for adjusting the substrate (P) to the photomask (M), and control and switch multiple position detection devices (P y 1 ~ P y) according to the position of the substrate (P) 3), corresponding to the exposure area (PA 1 ~ PA 9) exposed on the substrate (P) at the same time, selecting one of a plurality of position detection devices (P y 1 to P y 3), based on the detection position of the position detection device A control device (CONT) for correcting the exposure by an adjusting section (AL). According to the present invention, a plurality of position detection devices are arranged in parallel in the scanning direction, that is, the first direction, and a plurality of position detection devices are controlled according to the position of the substrate. Therefore, even if the moving mirror is short, the position detection device can be switched according to the position of the substrate. The position detection device used in position detection

11246pif.ptd 第16頁 200307182 五、發明說明（12) 光區域的每一個進行位置檢測。然後藉由在曝光多個曝光區域中的第1曝光區域時，基於第1位置檢測裝置的檢測結果由調正部進行調正處理之後而曝光，並在曝光第2曝光區域時，基於第2位置檢測裝置的檢測結果由調正部進行調正處理後而曝光，可在對1個曝光區域 (圖案形成區域）的處理時不進行多個位置檢測裝置的切換動作，由1個位置檢測裝置即可位置檢測，所以關於各個曝光區域可不含有位置檢測裝置的切換誤差，精度良好地進行位置檢測及曝光處理。本發明的元件製造方法的特徵是：包括使用上述說明的曝光方法或上述說明的曝光裝置（E X )，將描繪於光罩（M)的元件圖案曝光於基板（P)之工程（2 0 4)、將該曝光基板（P )顯像之工程（2 0 4 )。 ^ 如利用本發明，可在多個曝光區域的每個分區進行高精度的調正處理及曝光處理，所以能夠提高所製造的元件圖案精度。為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳細說明如下： [實施方式] 以下關於本發明的曝光裝置，參照圖1〜圖7進行說明。圖1是表示本發明的曝光裝置之一實施例的概略斜視圖，圖2是概略構成圖。11246pif.ptd Page 16 200307182 V. Description of the invention (12) Each of the light areas is subjected to position detection. Then, when the first exposure area of the plurality of exposure areas is exposed, the exposure is performed based on the detection result of the first position detection device after the correction processing is performed by the adjustment unit, and when the second exposure area is exposed, the exposure is based on the second The detection result of the position detection device is exposed after being subjected to the correction processing by the adjustment unit. The processing of one exposure area (pattern formation area) can be performed without switching between multiple position detection devices, and can be performed by one position detection device. That is, the position detection can be performed, so that each of the exposed areas may not include the switching error of the position detection device, and perform the position detection and exposure processing with high accuracy. The element manufacturing method of the present invention is characterized by including a process of exposing an element pattern drawn on a photomask (M) to a substrate (P) using the above-explained exposure method or the above-mentioned exposure apparatus (EX) (2 0 4 ), A process (2 0 4) of developing the exposed substrate (P). ^ According to the present invention, it is possible to perform high-precision alignment processing and exposure processing in each of a plurality of exposed regions, so that the accuracy of the pattern of the manufactured device can be improved. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is described below in detail with the accompanying drawings as follows: [Embodiment] The following is about the present invention. The exposure apparatus will be described with reference to FIGS. 1 to 7. Fig. 1 is a schematic perspective view showing an embodiment of an exposure apparatus according to the present invention, and Fig. 2 is a schematic configuration diagram.

11246pif.ptd 第17頁 200307182 五、發明說明（13) 在圖1及圖2中，曝光裝置EX具備有支援形成有圖案之光罩Μ的光罩載物台MST、支援感光基板P的基板載物台P S Τ、藉由曝光光E L照明被光罩載物台 M S Τ支援的光罩Μ之照明光學系統I L 、將藉由曝光光E L照明之光罩Μ的圖案的像投影於基板載物台P S Τ所支援的感光基板Ρ上之投影光學系統P L、檢測設於感光基板Ρ上的調正標誌之調正系統A L。具備有檢測支援光罩Μ的光罩載物台M S T在X軸方向之位置的多個鐳射干涉儀（位置檢測裝置）Μ X 1 ，Μ X 2 、檢測光罩載物台M S Τ在Υ軸方向之位置的鐳射干涉儀 (位置檢測裝置）M y 1 、檢測支援感光基板Ρ的基板11246pif.ptd Page 17 200307182 V. Description of the invention (13) In FIGS. 1 and 2, the exposure device EX is provided with a photomask stage MST supporting a patterned mask M, and a substrate carrier supporting a photosensitive substrate P The stage PS, the illumination optical system IL of the mask M supported by the mask stage MS T by the exposure light EL, and the image of the pattern of the mask M illuminated by the exposure light EL is projected on the substrate carrier. The projection optical system PL on the photosensitive substrate P supported by the station PS T and the calibration system AL that detects a calibration mark provided on the photosensitive substrate P. A plurality of laser interferometers (position detection devices) M X 1 and M X 2 provided with a mask stage MST for detecting the support mask M in the X-axis direction are provided on the Z axis Laser interferometer (position detection device) M y 1 at the position in the direction, detects the substrate supporting the photosensitive substrate P

載物台P S T在X軸方向之位置的多個鐳射干涉儀（位置檢測裝置）Ρ X 1 ，Ρ X 2、檢測基板載物台P S T ¥ Y軸方向之位置的多個鐳射干涉儀（位置檢測裝置） Pyl ，Py2 ，Py3 。被光罩載物台MS 丁支援的光罩Μ和被基板載物台PST支援的感光基板P ，通過投影光學系統P L以共軛之位置關係配置。照明光學系統I L有多個，本實施例為7個照明系統模組I Μ ( I M a〜I M g )。另外投影光學系統P L也有與照明系統模組I Μ的數目對應的，本實施例為7個投影光學系統P L a〜P L g。各個投影光學系統P L a〜P L g 與各個照明系統模組I M a〜I M g對應配置。感光基板P是在玻璃板（玻璃基板）上塗敷感光劑（光阻）。Multiple laser interferometers (position detection devices) P X 1, P X 2 at the position of the stage PST in the X axis direction. Multiple laser interferometers (position detection) at the position of the substrate stage PST ¥ Y axis direction. Device) Pyl, Py2, Py3. The photomask M supported by the mask stage MS D and the photosensitive substrate P supported by the substrate stage PST are arranged in a conjugated positional relationship through the projection optical system PL. There are multiple illumination optical systems I L, and in this embodiment, there are seven illumination system modules I M (I M a-I M g). In addition, the projection optical system P L also corresponds to the number of the illumination system modules I M. In this embodiment, there are 7 projection optical systems P L a to P L g. Each of the projection optical systems P L a to P L g is arranged corresponding to each of the lighting system modules I M a to I M g. The photosensitive substrate P is coated with a photosensitive agent (photoresist) on a glass plate (glass substrate).

有關本實施例之曝光裝置EX，為一面對曝光光EThe exposure device EX of this embodiment is one-side exposure light E

11246pif.ptd 第18頁 200307182 五、發明說明（14) L同步移動光罩Μ和感光基板P —面進行掃描曝光之掃描型曝光裝置，在以下的說明中，以投影光學系統P L 的光軸方向為Ζ軸方向，以Ζ軸方向的垂直方向即光罩 Μ及感光基板Ρ的同步移動方向為X軸方向（第1方向’掃描方向）’以Ζ轴方向及X轴方向（掃描方向）的直交方向為Υ軸方向（第2方向，非掃描方向）。另外，以X軸周圍、Υ軸周圍、Ζ軸周圍的各個方向為<9 X方向、0Υ方向、0Ζ方向。如圖2所示，照明光學系統I L具備有超高壓水銀燈等構成之光源1 、將從光源1射出的光束進行集光之橢圓鏡1 a 、將藉由該橢圓鏡1 a集光的光束之中曝光所需要的波長的光束反射，並使其他波長的光束透過之分色鏡2 、在藉由分色鏡2反射的光束之中，再只使曝毛所需之波長（通常為g、h、i線中的至少1個波段 )通過的波長選擇濾光器3、將來自波長選擇濾光器3 的光束分支為多條，本實施例為7條，通過反射鏡5被入射各照明系統模組I M a〜I M g的光導向設備4。照明系統模組I Μ設有多個，在本實施例中設有I M a〜I M g 7個（但在圖2中，出於方便只對與照明系統模組I M g對應的加以標示），各個照明光學系統 I M a〜I M g在X軸方向和Y軸方向保持一定的間隔配置。然後，從這些多個照明系統模組I M a〜I M g 的每一個射出之曝光光E L ，分別照明光罩Μ上的不同小區域（照明光學系統的照明區域）。11246pif.ptd Page 18, 200307182 V. Description of the invention (14) L is a scanning exposure device that synchronously moves the photomask M and the photosensitive substrate P to perform scanning exposure. In the following description, the optical axis direction of the projection optical system PL is used. Is the Z-axis direction, the vertical direction of the Z-axis direction, that is, the synchronous movement direction of the mask M and the photosensitive substrate P is the X-axis direction (the first direction 'scanning direction') The orthogonal direction is the Z axis direction (second direction, non-scanning direction). In addition, the directions around the X axis, the Z axis, and the Z axis are the < 9 X direction, 0 、 direction, and 0Z direction. As shown in FIG. 2, the illumination optical system IL includes a light source 1 including an ultra-high pressure mercury lamp, an elliptical mirror 1 a for collecting light beams emitted from the light source 1, and a light beam for collecting light by the elliptical mirror 1 a. The dichroic mirror 2 that reflects the light beam of the wavelength required for medium exposure and transmits the light beams of other wavelengths. Among the light beams reflected by the dichroic mirror 2, only the wavelength required for exposure (usually g, at least one band in the h and i lines) passed through the wavelength selection filter 3, and the light beam from the wavelength selection filter 3 is branched into a plurality of beams. In this embodiment, there are seven beams. Light guiding device 4 of system modules IM a to IM g. There are a plurality of lighting system modules IM. In this embodiment, there are seven IM a to IM g (but in FIG. 2, for convenience, only those corresponding to the lighting system module IM g are labeled), Each of the illumination optical systems IM a to IM g is arranged at a constant interval in the X-axis direction and the Y-axis direction. Then, the exposure light E L emitted from each of the plurality of illumination system modules I M a to I M g illuminates different small areas (illumination areas of the illumination optical system) on the mask M, respectively.

11246pi f.ptd 第19頁 200307182 五、發明說明（15) 各個照明系統模組I M a〜I M g具備有照明快門 6 、中繼透鏡7 、作為光學積分儀的複眼透鏡8、聚光鏡9 。照明快門6在光導向設備4的光程下游側，對光程進退自如配置。照明快門6遮蔽光程時將來自該光程的光束遮光，當解放光程時解除對光束的遮光。照明快門6接續有使該照明快門6對光束的光程進退移動之快門驅動郭窖慠C快門驅動部6 a藉由控制裝置C〇N T被控制。另外，在各個照明系統模組I M a〜I M g上設有光量調整機構1 0。該光量調整機構1 0是藉由對每光程設定光束的照度來調整各光程的曝光量的，具備有半透明反射鏡（half - mirror) 1 1 、檢測器（detector) 1 2 、濾光器1 3 、濾光器驅動部1 4。半透明反射鏡1 f配置於濾光器1 3和中繼透鏡7之間的光程中，將透過濾光器1 3之光束的一部分入射檢測器1 2 。各檢測器1 2持續獨立檢測入射之光束的照度，將檢測的照度信號輸出到控制裝置C〇N T。如圖3所示，濾光器1 3是在玻璃板1 3 a上藉由 C r等以編帶狀圖案形成的，以使透過率在沿X軸方向之範圍内呈線形逐漸變化而形成，配置于各光程中的照明快門6和半透明半反射鏡1 1之間。這些半透明半反射鏡1 1 、檢測器1 2及濾光器1 3在多個光程的每一個上分別配備設置。濾光器驅動部 1 4基於控制裝置C〇NT的指示，在X軸方向上移動11246pi f.ptd Page 19 200307182 V. Description of the invention (15) Each lighting system module I M a to I M g is provided with an illumination shutter 6, a relay lens 7, a fly-eye lens 8 as an optical integrator, and a condenser 9. The illumination shutter 6 is arranged on the downstream side of the optical path of the light guide device 4 and can move forward and backward freely. The illumination shutter 6 blocks the light beam from the optical path when it blocks the optical path, and releases the light blocking of the light beam when the optical path is released. The lighting shutter 6 is followed by a shutter driving Guo Jiao C shutter driving unit 6 a that moves the lighting shutter 6 forward and backward with respect to the optical path of the light beam, and is controlled by the control device CNT. In addition, each of the lighting system modules I M a to I M g is provided with a light amount adjustment mechanism 10. The light amount adjustment mechanism 10 adjusts the exposure amount of each optical path by setting the illuminance of the light beam for each optical path, and is provided with a half-mirror 1 1, a detector 1 2, and a filter. Optical filter 1 3 and filter driving section 1 4. The semi-transparent mirror 1 f is arranged in the optical path between the filter 13 and the relay lens 7, and a part of the light beam passing through the filter 13 is incident on the detector 12. Each detector 12 continuously and independently detects the illuminance of the incident light beam, and outputs the detected illuminance signal to the control unit CONT. As shown in FIG. 3, the filter 13 is formed on the glass plate 1 3 a by a tape pattern such as C r so that the transmittance gradually changes linearly in a range along the X-axis direction. , Arranged between the illumination shutter 6 and the translucent half mirror 11 in each optical path. These translucent and semi-reflective mirrors 1 1, detectors 12, and filters 13 are provided for each of a plurality of optical paths. The filter drive unit 14 moves in the X-axis direction based on an instruction from the control unit CONT.

11246pif.ptd 第20頁 200307182 五、發明說明（16) 濾光器1 3 。然後，藉由利用濾光器驅動部1 4移動濾光器1 3 ，調整各個光程的光量。透過光量調整機構1 0的光束通過中繼透鏡7到達複眼透鏡8。複眼透鏡8在射出面側形成二次光源，通過聚光鏡9可藉由均勻的照度照射光罩Μ的照明區域。然後，通過聚光鏡9之曝光光在照明系統模組中，通過具備有直角棱鏡1 6 、透鏡系統1 7、凹面鏡1 8之反射折射型光學系統後，藉由所定的照明區域照明光罩 Μ。光罩Μ藉由透過照明系統模組I M a〜I M g的各曝光光E L ，以分別照明不同的照明區域。支援光罩Μ的光罩載物台MS T具有在應進行一維掃描曝光之X軸方向上的長行程（stroke)、在與掃描方向直交之Y軸方向上所定距離的行程。如圖2所示，光東載物台MS T具備有使該光罩載物台MS T在X軸方向及Y軸方向移動之光罩載物台驅動部MSTD。光罩載物台驅動部M S T D藉由控制裝置C〇N T被控制。如圖1所示，在光罩載物台MST上的X軸方向及 Υ軸方向的各個末端邊緣，在直交之方向上分別設有移動鏡32a 、32b 。在移動鏡32a上有多個，本實施例為2個鐳射干涉儀Μ X 1 、Μ X 2對向配置。另外在移動鏡3 2 b上對向配置有鐳射干涉儀M y 1 。鐳射干涉儀Μ X 1 、Μ X 2分別對移動鏡3 2 a照射鐳射光，檢測與移動鏡3 2 a的距離。鐳射干涉儀Μ X 1 、 Μ X 2的檢測結果被輸出到控制裝置C〇Ν Τ ，控制裝11246pif.ptd Page 20 200307182 V. Description of the invention (16) Filter 1 3. Then, the filter 1 3 is moved by the filter driving section 14 to adjust the light amount of each optical path. The light beam transmitted through the light amount adjusting mechanism 10 reaches the fly-eye lens 8 through the relay lens 7. The fly-eye lens 8 forms a secondary light source on the exit surface side, and the condenser lens 9 can illuminate the illumination area of the mask M with uniform illumination. Then, the exposure light that has passed through the condenser lens 9 passes through a retroreflective optical system including a right-angle prism 16, a lens system 17, and a concave mirror 18 in the illumination system module, and then illuminates the mask M in a predetermined illumination area. The photomask M illuminates different illumination areas by passing each of the exposure lights E L of the illumination system modules I M a to I M g. The photomask stage MS T supporting the photomask M has a long stroke in the X-axis direction in which one-dimensional scanning exposure should be performed, and a predetermined distance in the Y-axis direction orthogonal to the scanning direction. As shown in FIG. 2, the light east stage MST is provided with a mask stage driving unit MSTD that moves the mask stage MST in the X-axis direction and the Y-axis direction. The photomask stage driving section MS T D is controlled by a control device CONT. As shown in Fig. 1, moving mirrors 32a, 32b are provided at the respective end edges of the X-axis direction and the Z-axis direction on the photomask stage MST in the orthogonal direction. There are a plurality of moving mirrors 32a. In this embodiment, two laser interferometers MX 1 and MX 2 are arranged to face each other. In addition, a laser interferometer M y 1 is arranged opposite to the moving mirror 3 2 b. The laser interferometers MX 1 and MX 2 respectively irradiate the moving mirror 3 2 a with laser light, and detect the distance from the moving mirror 3 2 a. The detection results of the laser interferometers MX 1 and MX 2 are output to the control device CON T, and the control device

11246pif.ptd 第21頁 200307182 五、發明說明（17) 置C〇N T基於鐳射干涉儀Μ X 1 、Μ X 2的檢測結果，求光罩載物台MST在X軸方向的位置及Ζ軸周圍的旋轉量。另外，。鐳射干涉儀My 1對移動鏡3 2b 照射鐳射光，檢測與移動鏡3 2 b的距離。鐳射干涉儀 M y 1的檢測結果被輸出到控制裝置C〇N T ，控制裝置C〇N T基於鐳射干涉儀M y 1的檢測結果，求光罩載物台M S T在Y轴方向的位置。然後，控制裝置C〇 NT藉由從鐳射干涉儀Mxl 、Μχ2及Myl的輸出監控光罩載物台MST的位置（姿勢），並控制光罩載物台驅動部M S T D，而將光罩載物台M S T設定於所希望的位置（姿勢）。透過光罩Μ的曝光光E L入射各個投影光學系統Ρ La〜PLg。投影光學系統PLa〜PLg是將存在於> 光罩Μ的照明區域之圖案像在感光基板P上成像，並在感光基板的特定區域（投影區域）投影曝光圖案像的，與各照明系統模組I M a〜I M g對應設置。如圖1所示，多個投影光學系統P L a〜P L g之中，投影光學系統P L a 、P L c 、P L e 、P L g和投影光學系統P L b 、P L d、P L f呈2列交錯狀排列。即，呈交錯狀配置的各投影光學系統P L a〜P L g使鄰接之投影光學系統彼此（例如投影光學系統P L a和PLb 、PLb和PLc)在Y軸方向上所定量移位元配置。這些各投影光學系統P L a〜P L g使從照明系統模組I M a〜I M g射出且透過光罩Μ之多個曝11246pif.ptd Page 21, 200307182 V. Description of the invention (17) Set CONT based on the detection results of the laser interferometers M X 1 and M X 2 to find the position of the photomask stage MST in the X axis direction and around the Z axis The amount of rotation. Also, ... The laser interferometer My 1 irradiates the moving mirror 3 2b with laser light, and detects the distance from the moving mirror 3 2 b. The detection result of the laser interferometer M y 1 is output to the control device CONT, and the control device C ONT determines the position of the photomask stage MS T in the Y-axis direction based on the detection result of the laser interferometer M y 1. Then, the control unit CONT monitors the position (orientation) of the photomask stage MST from the outputs of the laser interferometers Mxl, Mx2, and Myl, and controls the photomask stage driving unit MSTD to load the photomask on the photomask. The station MST is set at a desired position (posture). The exposure light E L transmitted through the mask M is incident on each of the projection optical systems P La to PLg. The projection optical systems PLa to PLg form a pattern image existing in the illumination area of the mask M on the photosensitive substrate P, and project an exposure pattern image on a specific area (projection area) of the photosensitive substrate. Groups IM a to IM g are set correspondingly. As shown in FIG. 1, among a plurality of projection optical systems PL a to PL g, the projection optical systems PL a, PL c, PL e, and PL g and the projection optical systems PL b, PL d, and PL f are staggered in two columns. arrangement. That is, each of the projection optical systems P L a to P L g arranged in a zigzag manner shifts adjacent projection optical systems (for example, the projection optical systems P L a and PLb, PLb, and PLc) in a quantitative shift arrangement in the Y-axis direction. Each of these projection optical systems P L a to P L g causes a plurality of exposures emitted from the illumination system modules I M a to I M g and transmitted through the photomask M.

11246pif.ptd 第22頁 200307182 五、發明說明（18) 光光E L透過，在基板載物台P ST所載置的感光基板 P上投影光罩Μ的圖案像。即，透過各投影光學系統P La〜PLg的曝光光EL ，在感光基板Ρ上的不同投影區域，將對應光罩Μ的照明區域之圖案像以所定的成像特性進行成像。如圖2所示，各投影光學系統P L a〜P L g分別具備有像位移裝置1 9 、2組反射折射型光學系統2 1 ，2 2 、視野光闌2 0、倍率調整裝置2 3 。像位移裝置1 9藉由例如2片平行平面玻璃板分別在X軸周圍或Y軸周圍旋轉，將光罩Μ的圖案像在Y軸方向或X軸方向位移。透過光罩Μ的曝光光E L透過像位移裝置1 9後，入射第1組反射折射型光學系統2 1 。反射折射型光學系統2 1是形成光罩Μ的圖案之中 #像的，具備有直角棱鏡2 4、透鏡系統2 5 、凹面鏡 26 。直角棱鏡24在Ζ軸周圍可旋轉自如，可使光罩 Μ的圖案像旋轉。在該中間像位置配置有視野光闌2 0 。視野光闌2 0是設定在感光基板Ρ上的投影區域的，在投影光學系統P L中對光罩Μ和感光基板Ρ配置於大致共軛之位置。透過視野光闌2 0的光束入射第2組反射折射型光學系統2 2 。反射折射型光學系統2 2和反射折射型光學系統2 1同樣，具備有直角棱鏡2 7 、透鏡系統2 8、凹面鏡29 。直角棱鏡27也可在Ζ軸周圍旋轉自如，可使光罩Μ的圖案像旋轉。11246pif.ptd Page 22 200307182 V. Description of the invention (18) The light E L is transmitted, and the pattern image of the photomask M is projected on the photosensitive substrate P placed on the substrate stage P ST. In other words, through the exposure light EL of each of the projection optical systems PLa to PLg, a pattern image corresponding to the illumination region of the mask M is imaged with predetermined imaging characteristics on different projection areas on the photosensitive substrate P. As shown in FIG. 2, each of the projection optical systems P L a to P L g is provided with an image displacement device 19 and two sets of reflective refractive optical systems 2 1, 2 2, a field diaphragm 20, and a magnification adjustment device 2 3. The image displacement device 19 rotates, for example, two parallel flat glass plates around the X-axis or the Y-axis, respectively, to shift the pattern image of the mask M in the Y-axis direction or the X-axis direction. After the exposure light E L that has passed through the mask M passes through the image shifting device 19, it enters the first group of reflective and refractive optical systems 2 1. The reflection-refraction optical system 21 is formed in the pattern of the mask M, and includes a right-angle prism 24, a lens system 25, and a concave mirror 26. The right-angle prism 24 is rotatable around the Z axis, and the pattern image of the mask M can be rotated. A field diaphragm 20 is arranged at this intermediate image position. The field diaphragm 20 is set in a projection area on the photosensitive substrate P, and in the projection optical system PL, the mask M and the photosensitive substrate P are arranged at substantially conjugate positions. The light beam that has passed through the field diaphragm 20 enters the second group of reflection-refractive optical systems 2 2. The refracting optical system 2 2 is similar to the refracting optical system 2 1 and includes a right-angle prism 2 7, a lens system 28, and a concave mirror 29. The right-angle prism 27 is also rotatable around the Z axis, and the pattern image of the mask M can be rotated.

11246pif.ptd 第23頁 200307182 五、發明說明（19) 從反射折射型光學系統2 2射出的曝光光E L通過倍率調整裝置2 3 ，並在感光基板P上將光罩Μ的圖案像以正像等倍成像。倍率調整裝置2 3由例如平凸透鏡、兩凸透鏡、平凸透鏡之3片透鏡構成’藉由使位於平凸透鏡和平凹透鏡之間的兩凸透鏡在Ζ方向移動使相對位置變化，而使光罩Μ的圖案像的倍率變化。支援感光基板Ρ的基板載物台P ST有基板架，通過基板架保持感光基板Ρ。基板載物台P S Τ和光罩載物台M S Τ同樣，具有在應進行一維掃描曝光之X軸方向上的長行程、用於在與掃描方向直交之Υ軸方向上步進移動的長行程，如圖2所示，具備有將該基板載物台 P S Τ在X軸方向及Υ軸方向移動之基板載物台驅動部 P STD。基板載物台驅動部P STD藉由控制裝置C cTnt被控制。另外，基板載物台PST也可在Ζ軸方向及0X、0Y、0Z方向移動。如圖1所示，在基板載物台P ST上的X軸方向及 Y轴方向的各個末端邊緣，在直交的方向上分別設置移動鏡（位置檢測裝置）3 4 a 、3 4 b 。在沿Y軸方向延伸之移動鏡3 4 a上對向配置有多個，本實施例為2 個鐳射干涉儀Ρ X 1 、Ρ X 2 。另外，在沿X軸方向延伸之移動鏡3 4 b上對向配置有多個，本實施例為3個 i雷射干涉儀Pyl 、Py2 、Py3 。這裏的多個错射干涉儀P y 1 、P y 2 、P y 3分別沿X軸方向等間隔11246pif.ptd Page 23 200307182 V. Description of the invention (19) The exposure light EL emitted from the reflective optical system 2 2 passes through the magnification adjustment device 2 3, and the pattern image of the photomask M is positively imaged on the photosensitive substrate P Isometric imaging. The magnification adjusting device 23 is composed of, for example, three lenses of a plano-convex lens, a biconvex lens, and a plano-convex lens. 'The relative position of the two convex lenses located between the plano-convex lens and the plano-concave lens is changed in the Z direction to change the pattern of the mask M. The magnification of the image changes. The substrate stage P ST supporting the photosensitive substrate P has a substrate holder, and the photosensitive substrate P is held by the substrate holder. The substrate stage PS T and the photomask stage MS T have a long stroke in the X-axis direction in which one-dimensional scanning exposure should be performed, and a long stroke for stepwise movement in the Z-axis direction orthogonal to the scanning direction. As shown in FIG. 2, the substrate stage driving unit P STD is provided with the substrate stage PS T moving in the X-axis direction and the Y-axis direction. The substrate stage driving unit P STD is controlled by a control device C cTnt. The substrate stage PST can also be moved in the Z-axis direction and the 0X, 0Y, and 0Z directions. As shown in FIG. 1, moving mirrors (position detection devices) 3 4 a and 3 4 b are respectively provided on the end edges of the X-axis direction and the Y-axis direction on the substrate stage P ST in orthogonal directions. A plurality of moving mirrors 3 4 a extending in the Y-axis direction are arranged opposite to each other. In this embodiment, there are two laser interferometers P X 1 and P X 2. In addition, a plurality of moving mirrors 3 4 b extending in the X-axis direction are arranged opposite to each other. In this embodiment, three i laser interferometers Pyl, Py2, and Py3 are arranged. Here, a plurality of stray interferometers P y 1, P y 2, and P y 3 are equally spaced along the X-axis direction, respectively.

並列設置。藉由移動鏡3 4 a和镭射干涉儀Ρ X 1 、PSet side by side. With the moving mirror 3 4 a and the laser interferometers P X 1, P

11246pif.ptd 第24頁 200307182 五、發明說明（20) χ2構成可檢測感光基板P在X軸方向（第1方向）的位置之位置檢測裝置。藉由移動鏡3 4 b和鐳射干涉儀 P y 1 、P y 2、P y 3構成可檢測感光基板P在Y軸方向（第2方向）的位置之位置檢測裝置。鐳射干涉儀 P X 1 、P X 2分別向移動鏡3 4 a照射鐳射光，檢測和移動鏡34a的距離。错射干涉儀Pxl、Px2的檢測結果被輸出到控制裝置C〇N T ，控制裝置C〇N T基於4雷射干涉儀P X 1 、P X 2的檢測結果，求基板載物台P ST在X軸方向的位置及Z軸周圍的旋轉量。另外，鐳射干涉儀P y 1〜P y 3向移動鏡3 4 b照射鐳射光，檢測和移動鏡3 4 b的距離。鐳射干涉儀P y 1〜P y 3的檢測結果被輸出到控制裝置C〇N T，控制裝置C〇N T基於鐳射干涉儀P y 1〜P y 3的檢測結> 果，求基板載物台P S T在Y軸方向的位置。然後，控制裝置CONT藉由從鐳射干涉儀Pxl 、Px2及 Py1〜Py3的輸出監控基板載物台PST的位置 (姿勢），並控制基板載物台驅動部PSTD，而將基板載物台PST設定於所希望的位置（姿勢）。這裏，控制裝置C〇N T在檢測基板載物台P S T 在Y轴方向的位置時，按照基板載物台P S T的移動，即按照支援感光基板P的基板載物台P S T在X軸方向之位置，切換多個錯射干涉儀P y 1〜P y 3中用於位置檢測的錯射干涉儀。11246pif.ptd Page 24 200307182 V. Description of the invention (20) χ2 constitutes a position detection device that can detect the position of the photosensitive substrate P in the X-axis direction (first direction). The moving mirror 3 4 b and the laser interferometers P y 1, P y 2, and P y 3 constitute a position detection device that can detect the position of the photosensitive substrate P in the Y-axis direction (second direction). The laser interferometers P X 1 and P X 2 irradiate laser light to the moving mirror 3 4 a, respectively, and detect and move the distance of the mirror 34 a. The detection results of the stray interferometers Pxl and Px2 are output to the control device CONT, which is based on the detection results of the 4 laser interferometers PX1 and PX2, and finds the substrate stage P ST in the X-axis direction Position and the amount of rotation around the Z axis. In addition, the laser interferometers P y 1 to P y 3 radiate laser light to the moving mirror 3 4 b to detect and move the distance of the mirror 3 4 b. The detection results of the laser interferometers P y 1 to P y 3 are output to the control device CONT. The control device CONT is based on the detection results of the laser interferometers Py 1 to Py 3 > Position of the PST in the Y-axis direction. Then, the control device CONT monitors the position (posture) of the substrate stage PST from the outputs of the laser interferometers Pxl, Px2, and Py1 to Py3, and controls the substrate stage driving unit PSTD to set the substrate stage PST At the desired position (posture). Here, when the control unit CONT detects the position of the substrate stage PST in the Y-axis direction, it follows the movement of the substrate stage PST, that is, the position of the substrate stage PST supporting the photosensitive substrate P in the X-axis direction. The misinterferometers for position detection are switched among a plurality of misinterferometers P y 1 to P y 3.

光罩載物台驅動部MS TD及基板載物台驅動部PPhotomask stage driving section MS TD and substrate stage driving section P

11246pif.ptd 第25頁 200307182 五、發明說明（21) S T D藉由控制裝置C〇N 丁被分別獨立控制，光罩載物台MST及基板載物台P ST在光罩載物台驅動部Μ S T D及基板載物台驅動部P S TD各個的驅動之基礎上，可分別獨立移動。然後，控制裝置C〇Ν Τ藉由一面監控光罩載物台MST及基板載物台P ST的位置一面控制兩驅動部P S T D、M S T D，可使光罩Μ和感光基板Ρ對投影光學系統P L ，以任意的掃描速度（同步移動速度）在X軸方向上同步移動。在感光基板Ρ上投影光學系統P L a〜P L g的投影區域5 0 a〜5 0 g分別被設定為所定形狀，本例中為梯形形狀。如圖1所示，投影區域5 0 a 、5 0 c 、 50e 、50g和投影區域50b 、50d、5〇f在 X軸方向上對向配置。另外，投影區域5 0 a〜50g 以6使鄰接投影區域的末端（交界部、接合部）彼此在Y 軸方向上重合而並列配置。然後，藉由以使投影區域5 0 a〜5 0 g的交界部彼此在Y軸方向上重合而並列配置，X軸方向的投影區域之寬度的總計被設定得大致相專。精此在X轴方向掃描曝光時的曝光量變得相等。這樣，藉由設置使利用投影光學系統P L a〜P L g的投影區域5 0 a〜5 0 g分別重合的重覆區域（接合部 )，可使接合部之光學像差的變化和照度變化平滑進行。接著，關於調正系統A L進行說明。調正系統A L是檢測設於感光基板P上之調正標誌11246pif.ptd Page 25, 200307182 V. Description of the invention (21) The STD is independently controlled by the control device CON. The photomask stage MST and the substrate stage P ST are in the photomask stage driving section Μ. The STD and the substrate stage drive section PS TD can be independently moved based on their respective driving. Then, the control device CONT controls the two driving sections PSTD and MSTD by monitoring the positions of the mask stage MST and the substrate stage P ST, so that the mask M and the photosensitive substrate P can be aligned with the projection optical system PL. , Synchronous movement in the X-axis direction at an arbitrary scanning speed (synchronous movement speed). The projection areas 50 a to 50 g of the projection optical systems P L a to P L g on the photosensitive substrate P are each set to a predetermined shape, which is a trapezoidal shape in this example. As shown in FIG. 1, the projection areas 50a, 50c, 50e, and 50g and the projection areas 50b, 50d, and 50f are oppositely arranged in the X-axis direction. In addition, the projection areas 50a to 50g are arranged in parallel so that the ends (junctions, joints) of adjacent projection areas overlap each other in the Y-axis direction. Then, the boundary portions of the projection areas 50 a to 50 g are arranged side by side in the Y-axis direction, and the total width of the projection areas in the X-axis direction is set to be approximately specific. Therefore, the exposure amounts when scanning exposure in the X-axis direction become equal. In this way, by providing overlapping areas (joint portions) in which the projection areas 50 a to 50 g of the projection optical systems PL a to PL g are overlapped, the change in optical aberration and change in illuminance at the joint portion can be smoothed get on. Next, the adjustment system A L will be described. The adjustment system A L detects the adjustment mark provided on the photosensitive substrate P

11246pif.ptd 第26頁 200307182 配和列g 2 L 呈p 在、， θ 示L 所p 2 > 圖 c 及L 1 p 圖、如a ，L 的p }統諸系標學 g正光爿調影奶板投發基的、C置五11246pif.ptd Page 26 200307182 The matching column g 2 L is p,, θ shows L, p 2 > Figures c and L 1 p, such as a, L p} Systematic standards g positive light tone Shadow milk board release base, C set five

板多基光向感方與2 間第之C f 向 L方 P轴、Y d在 L L p A 、統 b系 L正 P調統。系置學設光向影對投P 標L 正P 調、板a 基L 個P 多統的系上學 P光板影基投光的感置於配設列測2 檢呈，在置，配外列另並。個誌The board multi-base light direction sense side and the 2nd C f direction L side P axis, Y d is in L L p A, and system b is the L positive P system. The system sets the light to the shadow to cast the P standard L positive P tone, the plate a base L multiple P system of the school P light board shadow base cast light feeling placed in the configuration test 2 check, in place, outside Listed separately. Individual

、板 d基 L光 P感、該 b測 L檢 P且統對系相學P 光板影基投光和感 g與 L有 P設、 %, e間 L之 p f 、L CP F軸 A z c在統Μ 系罩測光檢該焦測調檢動且自對側相板Μ 基罩的光置與位、之ο 向6 方} 軸統 Ζ系在測 Ρ檢, Board d-based L light P sense, the b test L test P and the system phase P light board shadow light projection and sense g and L have P set,%, e p between L, L CP F axis A zc In the system M, the photometric inspection of the focus measurement is performed and the light position and position from the opposite side of the phase plate M base cover, which is ο to 6 directions.

側軸板Υ 基在各也 ο ο 0 7 7統統系系測測檢檢F 焦A 調側動罩自光側及罩ο 光6 的統置系位測之檢向F 方A 板所基一—I 、圖 L如 A ο 統7 系統正系調測個檢多F ，A 裏罩這光。及置ο 配6 列統並系個測多檢上F 向A 方t側被A 將統，系中正明調說及的ο 下7 以、在ο ο 6 化統元系單測而檢援F 支A 所的 Η援架支支所為Η ，架示支圖視斜的 U 。元 η 口元-正單J 周 E 言 I"疋同丨 4 為圖稱宜The side shaft plate Υ base is located at each side. Ο 0 7 7 All systems are measured and inspected F Focus A The side-moving hood is located from the light side and the cover ο Light 6 is aligned with the F-direction A side. I—I and the picture L are shown in A. System 7 The system is commissioning a multi-detector F, and A covers this light. And set ο configure 6 rows of systems and test multiple inspections on the side of F to A side t by A will be the system, which is referred to by Zhong Zhengming ο down 7 to, ο ο 6 huayuan system is a single test and inspection The support branch of the F branch of the A branch is Η. Yuan η Mouth Yuan-Zheng J Zhou E Yan I " 疋 Same as 丨 4

說於用是 C L ο A 7 統統系系正測調檢的F 中A U側元罩單光正及調ο 明6 統Ρ 系板測基檢光、F感 Β Α及 V Μ 5板罩圖基光It is said that CL ο A 7 is a system that is being tested and inspected in the F AU side element cover. Single light is positive and adjusted. Ming 6 System P system is based on light detection, F sensor Β Α and V Μ 5 plate cover. Light

側元罩單光正和調 Μ的罩4 光圖為是示所圖 A 5 ，圖係 ’ 關裏置這位。的示ο 圖7 的統係系關測置檢位F 之A Β 5 側上從是圖面平的丁 S P C 5厶口圖物，β -V3· 圖板面基斷之視Ρ 剖板 Α基 -光 A感的援 U支The side element cover single light positive and the cover 4 light photo is shown in the picture A 5, the picture system is placed in this position. Figure ο The system in Figure 7 is the A and B 5 side of the inspection position F. The drawing is flat from the SPC 5 gate, and β-V3. Aid-U support

側 Z 5 圖察中觀Side Z 5 Figure

11

11246pi f.ptd 第27頁 200307182 五、發明說明（23) 所示的光罩側A F檢測系統7 0相當於圖4的B — B斷面剖視圖。如圖4及圖5 B所示，調正系統A L ( A L 1〜A L 6 )在非掃描方向即Y軸方向並列配置有多條，本實施例中為6條。調正系統A L 1〜A L 6在呈2列配置的投影光學系統P L a 、P L c 、P L e 、P L g和投影光學系統P L b 、P L d 、P L f之間，沿該投影光學系統P L a〜P L g之投影區域5 0 a〜5 0 g的並列方向配置。如圖5 B所示，在Y軸方向多個並列之調正系統A L 1〜 AL6中，Y軸方向中央的調正系統AL2〜AL5設於投影光學系統P L ( P L a〜P L g )的内側，Y軸方向兩側的調正系統A L 1 、A L 6設於投影光學系統 P1 L的外側。這裏，如圖5 B及5 C所示，多個調正系統A L 1〜A L 6中，外側2個調正系統A L 1和A L 6的間隔被設定得與感光基板P在Y軸方向的長度大致相等。另外，如圖5 A及5 B所示，外側2個調正系統A L 1 和A L 6的間隔被設定得比光罩Μ在Y轴方向的長度要長（在光罩Μ的Υ軸方向的長度以上）。另一方面，在感光基板Ρ上如圖5C所示，設有用於調正處理的多個調正標誌（基板調正標誌）m 1〜m 6 。在本實施例中，在感光基板P上沿Y軸方向並列有 6個的調正標誌m 1〜m 6 ，隔有間隔形成於X軸方向的6處位置，全部共形成有3 6個調正標誌。另外，圖11246pi f.ptd Page 27 200307182 V. Photomask side A F detection system 70 shown in the description of the invention (23) is equivalent to the B-B sectional view in FIG. 4. As shown in FIG. 4 and FIG. 5B, a plurality of alignment systems A L (A L 1 to A L 6) are arranged side by side in the non-scanning direction, that is, in the Y-axis direction. In this embodiment, there are six. The adjustment systems AL 1 to AL 6 are arranged between the projection optical systems PL a, PL c, PL e, and PL g and the projection optical systems PL b, PL d, and PL f arranged in two rows, along the projection optical system PL a The projection areas of ~ PL g are arranged in a parallel direction of 50 a to 50 g. As shown in FIG. 5B, among a plurality of side-by-side adjustment systems AL 1 to AL 6 in the Y-axis direction, the center adjustment systems AL 2 to AL 5 in the Y-axis direction are provided inside the projection optical system PL (PL a to PL g). The adjustment systems AL 1 and AL 6 on both sides in the Y-axis direction are provided outside the projection optical system P1 L. Here, as shown in FIGS. 5B and 5C, among the plurality of adjustment systems AL1 to AL6, the interval between the two outer adjustment systems AL1 and AL6 is set to the length of the photosensitive substrate P in the Y-axis direction. Roughly equal. In addition, as shown in FIGS. 5A and 5B, the interval between the two outer adjustment systems AL1 and AL6 is set to be longer than the length of the reticle M in the Y-axis direction (in the y-axis direction of the reticle M). Over length). On the other hand, as shown in FIG. 5C, a plurality of alignment marks (substrate alignment marks) m 1 to m 6 are provided on the photosensitive substrate P for alignment processing. In this embodiment, six adjustment marks m 1 to m 6 are juxtaposed along the Y-axis direction on the photosensitive substrate P, and are formed at six positions in the X-axis direction at intervals. A total of 36 adjustment marks are formed. Positive sign. In addition, the figure

11246pif.ptd 第28頁 200307182 五、發明說明（24) 中調正標誌以π參f’表示，但也可用十字形n + π或箱形標誌，1 □’，。本實施例在感光基板Ρ上，對應在Υ軸方向6個並列之調正標諸m 1〜m 6設有調正系統A L 1〜A L 6 。然後，使這6個調正系統A L 1〜A L 6的每一個和調正標誌m 1〜m 6的每一個成對向設定，調正系統 AL1〜AL6以與調正標諸ml〜m6的每一個對向之狀態，可同時檢測這些調正標誌m 1〜m 6的每一個。即，本實施例基於在感光基板P上形成的調正標誌 m 1〜m 6的配置（間隔），設定調正系統A L 1〜A L 6的配置（間隔）。如圖4及圖5B所示，在調正系統AL 1〜AL 6的 X軸方向兩側設有多個基板側A F檢測系統6 0 ( 6 0 ak〜6 0 g )。在本實施例中，基板侧A F檢測系統設有7個6 0 a〜6 0 g。基板側A F檢測系統6 0 a〜 6 0 g設於與基板載物台P ST所支援的感光基板P對向之位置，分別檢測感光基板P在曝光面的直交方向，即在Z軸方向的位置。多個基板側A F檢測系統6 0 a 〜6 0 g中，A F檢測系統6 0 a 、6 0 b 、6 0 d 、 6 0 f 、6 0 g在Y軸方向並列配置，同時A F檢測系11246pif.ptd Page 28 200307182 5. In the description of the invention (24), the correction mark is represented by π reference f ′, but it can also be a cross-shaped n + π or box mark, 1 □ ’. In this embodiment, a correction system A L 1 to A L 6 is provided on the photosensitive substrate P, corresponding to six parallel calibration standards m 1 to m 6 in the z-axis direction. Then, each of the six adjustment systems AL 1 to AL 6 and each of the adjustment marks m 1 to m 6 are set in pairs, and the adjustment systems AL 1 to AL 6 are set to match the adjustment standards ml to m 6. For each of the facing states, each of these adjustment marks m 1 to m 6 can be detected simultaneously. That is, this embodiment sets the arrangement (interval) of the adjustment systems A L 1 to A L 6 based on the arrangement (interval) of the adjustment marks m 1 to m 6 formed on the photosensitive substrate P. As shown in FIGS. 4 and 5B, a plurality of substrate-side A F detection systems 60 (60 0 ak to 60 g) are provided on both sides in the X-axis direction of the adjustment systems AL 1 to AL 6. In this embodiment, the substrate-side A F detection system is provided with seven 60 a to 60 g. The substrate-side AF detection system 60 a to 60 g is provided at a position facing the photosensitive substrate P supported by the substrate stage P ST, and detects the orthogonal direction of the photosensitive substrate P on the exposure surface, that is, in the Z-axis direction. position. Among multiple substrate-side A F detection systems 60 a to 60 g, the A F detection systems 60 a, 60 b, 60 d, 60 f, and 60 g are arranged side by side in the Y-axis direction, and the A F detection system

統6 0 c 、6 0 e在Y軸方向並列配置。而且這2列A F 檢測系統 6 0 a 、6 0 b、6 0 d、6 0 f 、6 0 gThe systems 60 c and 60 e are arranged side by side in the Y-axis direction. And these two columns of A F detection systems 6 0 a, 6 0 b, 6 0 d, 6 0 f, 6 0 g

和A F檢測系統6 0 c 、6 0 e將調正系統A L ( A L 1〜A L 6 )挾持配置。And A F detection systems 60 c and 60 e will hold the adjustment system A L (A L 1 ~ A L 6) in a supported configuration.

11246pif.ptd 第29頁 200307182 五、發明說明（25) 多個基板側A F檢測系統6 0 a〜6 0 g中，Y軸方向中央的基板側A F檢測系統6 0 b〜6 0 f設於投影光學系統P L ( P L a〜P L g )的内側，Y軸方向兩側的基板A F檢測系統6 0 a 、6 0 g設於投影光學11246pif.ptd Page 29, 200307182 V. Description of the invention (25) Multiple substrate-side AF detection systems 6 0 a to 6 0 g, the substrate-side AF detection system 6 in the center of the Y axis direction 6 0 b to 6 0 f Inside of the optical system PL (PL a ~ PL g), the substrate AF detection systems 60 a and 60 g on both sides in the Y-axis direction are provided in the projection optics

系統P L ( P L a〜P L g )的外側。這裏，外側的基板側A F檢測系統6 0 a 、6 0 g的每一個，與多個調正系統A L 1〜A L 6中外側2個調正系統A L 1 、A L 6的每一個鄰接配置。外側2個基板側A F檢測系統 6 0 a 、6 0 g的間隔也被設定得與感光基板P的Y軸方向的長度大致相等。另外，設於投影光學系統P L的内側之基板側A F檢測系統6 0 b〜6 0 f呈2列交錯狀排列，在Y軸方向大致等間隔設置。基板側A F檢測系統6 0 a〜6 0 g的各個檢測結束被輸出到控制裝置C〇N T，控制裝置C〇N T基於基板側A F檢測系統6 0 a〜6 0 g的檢測結果，求感光基板P在Z軸方向的位置。另外，基板側A F檢測系統6 0 a〜6 0 g分別2維配置於X軸方向及Y軸方向，所以控制裝置C〇N T基於多個基板側A F檢測系統6 0 a〜6 0 g的檢測結果，可求感光基板P在X軸周圍方向及Y軸周圍方向的姿勢。控制裝置C〇NT基於求得的在Z軸方向之位置及在X軸、Y軸周圍方向之姿勢，驅動基板載物台驅動部P STD，並進行感光基板P在Z軸方向之位置的調正及在X軸、Y軸周圍方向之姿勢的調正，即校平調正。The outside of the system PL (PLa to PLg). Here, each of the outer substrate side A F detection systems 60 a and 60 g is disposed adjacent to each of the two outer adjustment systems A L 1 and A L 6 of the plurality of adjustment systems A L 1 to A L 6. The interval between the two outer substrate side A F detection systems 60 a and 60 g is also set to be approximately equal to the length in the Y-axis direction of the photosensitive substrate P. In addition, the substrate-side A F detection systems 6 0 b to 6 0 f provided inside the projection optical system PL are arranged in two rows in a staggered manner, and are arranged at approximately equal intervals in the Y-axis direction. The end of each detection of the substrate-side AF detection system 60 a to 60 g is output to the control device CONT, and the control device CONT determines the photosensitive substrate based on the detection result of the substrate-side AF detection system 60a to 60g. Position of P in the Z-axis direction. In addition, the substrate-side AF detection systems 60 a to 60 g are arranged two-dimensionally in the X-axis direction and the Y-axis direction, respectively. Therefore, the control device COONT detects based on a plurality of substrate-side AF detection systems 60 a to 60 g. As a result, the posture of the photosensitive substrate P in the X-axis peripheral direction and the Y-axis peripheral direction can be determined. The controller CONT drives the substrate stage driving unit P STD based on the obtained positions in the Z-axis direction and the positions in the directions around the X-axis and Y-axis, and adjusts the position of the photosensitive substrate P in the Z-axis direction. The adjustment of the postures that are positive and in the directions around the X axis and the Y axis, that is, to level and adjust.

11246pif.ptd 第30頁 200307182 側罩光個多有設上 U 元單正同示所 A 5 圖及 \ly 264 /|\ 圖明說如明發光例。施d 實ο 本7 在~ oa )ο d 7 ο統 7系 ~測 3檢 OF 7 A Γ\ 側 ο罩 7光統個系4 測有檢設 F Α中11246pif.ptd Page 30 200307182 The side mask light is usually set with a U-unit single positive display unit A 5 picture and \ ly 264 / | \ picture shows an example of light emission. Implement d implementation ο this 7 in ~ oa) d 7 ο system 7 series ~ test 3 inspection OF 7 A Γ \ side ο cover 7 light system unit 4 test inspection facility F Α

S的Μ Μ 厶口罩物光載與罩測光檢於別設分 d ， ο置 7位 ~之 a向 ο對 7的統Μ 系罩測光檢的 F援 Α支側所罩T 向ο 方7 之統交系直測面檢成F 形A 案側圖罩即光向個方多軸〇 Y 置在位個的一向每方的軸d ζ ο 在7 學 5光圖影如投裏於這設〇 d 置ο 配7 列~ 並a 隔ο 間7 等統上系測檢 F A 側罩光示所 a L P Γ\ L p 統系 a大 ο度 7長統的系向測方檢軸 F Y A在側Μ 罩罩光光個與 2得側定外設，被側隔内間的的 )dg ο L 7 p ~ 他同其相， IX 外L 另A 。統圖成正構調略與概為的也 16 L L A A 統~ 系2 正L 調A 是統。CO系等圖正目同才 P 致的用測檢出射由有備具 1 L A 統系正調示所 6 〇圖成如構之 8向半源導明光光透從的半將成的由構側、纖游 1光下 8之程源3光光8之用鏡3 正透8 調繼鏡的中透成向繼構導中燈光於素測設鹵檢、之的2 光出00 射備檢1設 4 ( 8 P鏡板射基反光半明透半於設 IX m 諸標正調感明即透件半物過測通檢將和， 4間 8之鏡} 射 CO 反m 產射 8 }反鏡誌轉物標偏的正之上調向 p C導板P被基板4 光基8 感光鏡於感射射在反照使半光射明測照透檢的半之光過 4測通 8檢光鏡由射射藉反反、之半5生S Μ Μ 厶 mask light load and mask photometry are separately set d, ο set 7th ~ a to ο 7 pairs of the system of the Μ system mask photometry F side A cover T direction ο square 7 The direct measurement surface of the system was detected as F-shaped. A case-side picture cover is a light-oriented multi-axis. Y is located in each direction of each axis. D ζ ο In 7 studies, 5 light images are cast like this. Let 〇d set ο arrange 7 rows ~ parallel a partition ο 7 and other systems to measure the FA side cover light display a LP Γ \ L p system a large ο degree 7 long system of the system to measure the axis FYA On the side M, there are two light sources (dg ο L 7 p), which are externally fixed, and are in the side compartment. Dg ο L 7 p ~ he is the same, IX, L and A. The system plan is normal and approximate. The 16 L L A A system ~ System 2 is the L system. The CO system and other maps are the same as the original P. The detection and emission are provided by the equipment. 1 The LA system is the correct display. The map is as the structure. The 8-direction semi-source guides the light through the semi-general structure. Side, fiber travel, 1 light source, 8 light source, 3 light source, 8 light mirror, 3 normal transmission, 8 relay lens, intermediate transmission, and relay structure. Inspection 1 set 4 (8 P mirror plate shot base reflective half transparent half set at IX m, the standard adjustment is clear, that is, the transparent half of the object passes the test and will pass through the test, 4 8 mirrors} shot CO counter m production shot 8} The mirror turns the object just above the standard deviation, and the PC guide plate P is placed on the substrate 4 light base 8. The light sensor is reflected in the reflection so that the half light is bright and the half light is transparent. Mirror by She She Borrowed, Half of Life

11246pi f.ptd 第31頁 200307182 五、發明說明（27) 鏡8 6 、將來自偏轉反射鏡8 6的反射光進行分支之分光鏡（分支裝置）87 、藉由分光鏡87被分支的2支光束其中的一支光束入射之低倍率調正受光系統8 8 、另一支光束入射之高倍率調正受光系統8 9 。低倍率調正受光系統8 8具有低倍率透鏡系統8 8 A和低倍用攝像元件（C C D ) 8 8 B ，可以所定的精度計測感光基板P上的大範圍區域。高倍率調正受光系統8 9具有高倍用透鏡系統8 9 A和高倍用攝像元件（C C D ) 8 9 B ，可以高精度計測感光基板P的狹窄區域。這些低倍率調正受光系統8 8 A和高倍率調正受光系統8 8 B在同軸配置。而且，藉由調正用檢測光對感光基板P (基板調正標誌）的照射而產生的光（反射光），被低倍率調正受光系統8 8和高倍率調正受光系統8 9分別受光.。低倍率調正受光系統8 8基於來自藉由調正用檢測光被照射之感光基板P的大範圍區域的光資訊，進行以粗精度檢測調正標諸m 1 ( m 2〜m 6 )的位置資訊之探測調正處理。另一方面，高倍率調正受光系統8 9基於來自藉由調正用檢測光被照射之感光基板P的狹窄區域的光資訊，進行以高精度檢測調正標諸m 1 ( m 2〜 m 6 )的位置資訊之精密調正處理。低倍率調正受光系統8 8及高倍率調正受光系統8 9分別向控制裝置C〇 N T輸出受光信號，控制裝置C〇N T基於調正受光系統8 8 、8 9各個的受光信號進行圖像處理，求標誌位11246pi f.ptd Page 31 200307182 V. Description of the invention (27) Mirror 86, branching beam splitter (branch device) 87 that branches off the reflected light from the deflection mirror 86, 2 branched by the beam splitter 87 One of the light beams is incident on the low-magnitude-corrected light receiving system 8 8, and the other light beam is incident on the high-magnitude-corrected light-receiving system 8 9. Low magnification correction light receiving system 8 8 has a low magnification lens system 8 8 A and a low magnification imaging element (C C D) 8 8 B. It can measure a large area on the photosensitive substrate P with a predetermined accuracy. The high magnification correction light receiving system 8 9 has a high magnification lens system 8 9 A and a high magnification imaging element (C C D) 8 9 B, and can measure a narrow area of the photosensitive substrate P with high accuracy. These low magnification light receiving systems 8 8 A and high magnification light receiving systems 8 8 B are coaxially configured. In addition, light (reflected light) generated by irradiation of the detection light for the photosensitive substrate P (substrate adjustment mark) with the correction light is received by the low-magnitude correction light receiving system 88 and the high-magnitude correction light receiving system 88 respectively. .. The low magnification correction light receiving system 88 performs detection of the correction standards m 1 (m 2 to m 6) with coarse accuracy based on light information from a large area of the photosensitive substrate P that is irradiated with the detection light for correction. Detection and correction of location information. On the other hand, the high-magnification correction light receiving system 89 performs detection with high accuracy based on light information from a narrow area of the photosensitive substrate P irradiated with the detection light for adjustment. M 1 (m 2 to m 6) Precise adjustment of position information. The low-magnitude-corrected light-receiving system 88 and the high-magnitude-corrected light-receiving system 889 each output a light-receiving signal to the control device CONT, and the control device CON performs an image based on the light-receiving signals of the light-correction light-receiving system 8 8 and 8 9 Processing, seeking flag

11246pif.ptd 第32頁 200307182 五、發明說明（28) 置資訊。這裏，控制裝置C〇N 丁參照藉由低倍率調正受光系統8 8的探測調正處理結果，進行藉由高倍率調正受光系統8 9的精密調正處理。當藉由調正系統A L求標諸位置資訊時，可藉由圖像處理從標誌的邊緣資訊求標誌位置。另外，作為求標諸、位置的方法也可使用圖形比對（m a t c h i n g )法。即，控制裝置C〇N T接續有記憶樣板圖像的記憶裝置（不圖示），藉由圖形比對求與樣板（template) —致之圖案的座標（在載物台的移動坐標系統的位置）。控制裝置C 〇N T用該座標值求接合曝光時和重合曝光時所生成的偏離量，在下次以後的曝光時藉由給基板載物台驅動部 P S TD以修正參數，而提高位置吻合精度。在上述調正系統AL1(AL2〜AL6)中，光源‘ 8 1 、光導向設備8 2及中繼透鏡系統8 3構成調正系統的送光系統，分光鏡8 7、低倍率調正受光系統8 8及高倍率調正受光系統8 9構成調正系統的受光系統。另外，光源8 1可為設於多個調正系統A L 1〜A L 6的每一個之構成，也可為將從1個光源8 1射出的光藉由多個光導向設備（光纖）8 2分支、並將該分支的多支光向調正系統A L 1〜A L 6分別供給之構成。調正用檢測光對感光基板P的光阻為非感光性最為理想，可為在光源8 1和感光基板P之間的光程上，設置切除由鹵素燈構成的光源81射出的光（白色光）中特定波長的光之濾、光器的構成。11246pif.ptd Page 32 200307182 V. Description of the invention (28) Information. Here, the control device CON refers to the detection and adjustment processing result of the light receiving system 88 by the low magnification correction, and performs the precise adjustment processing of the light receiving system 88 by the high magnification correction. When the position information is sought by the alignment system A L, the mark position can be obtained from the edge information of the mark by image processing. In addition, as a method for finding the positions and positions of the marks, a graphic comparison (m a t c h i n g) method may be used. That is, the control device CONT is connected to a memory device (not shown) that stores a template image, and compares the coordinates of the pattern with the template (the position on the moving coordinate system of the stage) by graphic comparison. ). The controller C ONT uses this coordinate value to calculate the amount of deviation generated during the joint exposure and the superimposed exposure. The next stage of the exposure is to correct the parameters by feeding the substrate stage driving unit PSTD to improve the position matching accuracy. In the above-mentioned adjustment system AL1 (AL2 to AL6), the light source '8 1, the light guide device 8 2, and the relay lens system 8 3 constitute a light transmission system of the adjustment system, a beam splitter 87, and a low magnification adjustment light receiving system. 8 8 and the high-magnitude correction light receiving system 8 9 constitute the light receiving system of the adjustment system. In addition, the light source 8 1 may be configured in each of a plurality of adjustment systems AL 1 to AL 6, or may be a light emitted from one light source 8 1 through a plurality of light guide devices (optical fibers) 8 2. It is configured to branch and supply the plurality of branches of light to the adjustment systems AL 1 to AL 6 respectively. The photoresist of the detection light used for the adjustment to the photosensitive substrate P is most preferably non-photosensitive. The light path between the light source 81 and the photosensitive substrate P may be provided by cutting off the light emitted by the light source 81 composed of a halogen lamp (white Filter of light of a specific wavelength and the structure of an optical device.

11246pif.ptd 第33頁 200307182 五、發明說明（29) 圖7是表示基板側A F檢測系統6 0 a的概略構成圖。另外，其他的基板側A F檢測系統6 0 b〜6 0 g 及光罩側A F檢測系統7 0 a〜7 0 d也和A F檢測系統6 0 a為同樣的構成。如圖7所示，A F檢測系統6 0 a具備有由射出A F用檢測光之L E D構成的A F用光源6 1 、使從光源 6 1射出的檢測光入射之送光透鏡系統6 2 、將通過送光透鏡系統6 2的光從傾斜方向導向檢測物件即感光基板（或光罩M)之反射鏡6 3、基於通過反射鏡6 3所照射的檢測光，將感光基板P (或光罩Μ )所產生的反射光導向受光系統6 5之反射鏡6 4 、將通過受光系統 6 5的光進行受光之攝像元件（CCD) 66。送光透鏡系統6 2將檢測光整形為例如縫隙狀後照射感光基板 Ρ。這裏，如圖7所示，檢測物件即感光基板Ρ在Ζ轴方向的位置進行△ Ζ移位後，從傾斜方向所照射的縫隙狀的檢測光，使在攝像元件6 6之X軸方向的成像位置進行△ X移位。攝像元件6 6的攝像信號被輸出到控制裝置C〇NT，控制裝置C〇NT基於對藉由攝像元件 6 6之攝像位置的基準位置的移位量ΔΧ，求感光基板 P在Z軸方向的移位量△ Z。這裏，當從受光透鏡系統 6 5的入射面向射出面側的倍率被設定為N倍（例如1 0倍）時，攝像元件6 6對感光基板P的移位△ Z可以 N倍（1 0倍）的感度檢測。在上述A F檢測系統6 0 a ( 6 0 b〜6 0 g、711246pif.ptd Page 33 200307182 V. Description of the invention (29) Fig. 7 is a diagram showing a schematic configuration of a substrate-side AF detection system 60a. In addition, the other substrate-side A F detection systems 6 0 b to 6 0 g and the photomask-side A F detection systems 7 0 a to 7 0 d have the same configuration as the A F detection system 6 0 a. As shown in FIG. 7, the AF detection system 60 a includes an AF light source 6 1 composed of an LED that emits AF detection light, and a light transmitting lens system 6 2 that makes detection light emitted from the light source 61 1 incident. The light from the light transmitting lens system 62 is directed from the oblique direction to the reflecting mirror 6 of the photosensitive substrate (or the mask M) that is the detection object. 3. Based on the detection light irradiated by the reflecting mirror 63, the photosensitive substrate P (or the mask M) The generated reflected light is guided to the reflecting mirror 6 4 of the light receiving system 65, and an imaging element (CCD) 66 that receives the light passing through the light receiving system 65. The light transmitting lens system 62 shapes the detection light into, for example, a slit shape, and irradiates the photosensitive substrate P. Here, as shown in FIG. 7, after the position of the photosensitive substrate P, which is a detection object, is shifted by ΔZ in the Z axis direction, the slit-shaped detection light irradiated from the oblique direction makes the X-axis direction of the imaging element 66 The imaging position is shifted by ΔX. The imaging signal of the imaging element 66 is output to the control device CONT, and the control device CONT determines the position of the photosensitive substrate P in the Z-axis direction based on the shift amount ΔX from the reference position of the imaging position of the imaging element 66. Shift amount △ Z. Here, when the magnification from the incident surface of the light-receiving lens system 65 to the exit surface side is set to N times (for example, 10 times), the displacement ΔZ of the imaging element 66 to the photosensitive substrate P may be N times (10 times) ) Sensitivity detection. In the above A F detection system 6 0 a (6 0 b to 6 0 g, 7

11246pif.ptd 第34頁 200307182 五、發明說明（30) 〇a〜70d)中，光源61 、送光透鏡系統62及反射鏡6 3構成AF檢測系統的送光系統，反射鏡6 4、受光透鏡系統6 5及攝像元件6 6構成A F檢測系統的受光系統。另外，光源6 1可為設於多個A F檢測統6 〇a〜60g (70a〜70d)的每一個之構成，也可為將從1個光源6 1射出的光藉由多個光導向設備 (光纖）分支、並將該分支的多支光向多個A F系統供給之構成。A F用檢測光也是對感光基板P的光阻為非感光性最為理想，可為在光源6 1和感光基板P之間的光程上，設置切除光源6 1射出的光中特定波長的光之濾光器的構成。然而，本實施例中的調正系統A L為偏離中心線方式，在進行調正處理時，光罩Μ和基板調正系統A L的相‘對位置即基線量被計測。以下，關於基線計測方法進行說明。如圖1 、圖2及圖5A、B、C所示，光罩Μ上設有基線計測用的標誌（光罩側A I S標誌）9 0 ，基板載物台P S T上設有具備基線計測用的標誌（基板側A I S 標誌）9 1之基準構件9 2。基板側A I S標誌9 1在 Z軸方向的形成位置（高度）被設定得與感光基板P的表面（曝光面）略一致。另外光罩側A I S標誌9 0以對光罩Μ的特定位置（例如中心位置）之所定的位置關係而被設置。光罩側A I S標誌9 0和基板側A I S標諸、9 1相對應’分別在Y轴方向多個並列設置。如圖211246pif.ptd Page 34 200307182 5. In the description of the invention (30) 〇a ~ 70d), the light source 61, the light transmitting lens system 62 and the reflecting mirror 6 3 constitute the light transmitting system of the AF detection system, the reflecting mirror 6 4. The system 65 and the imaging element 66 constitute a light receiving system of the AF detection system. In addition, the light source 61 may have a configuration provided in each of a plurality of AF detection systems 60a to 60g (70a to 70d), or it may have a plurality of light guide devices for light emitted from one light source 61. (Fiber) A configuration that branches and supplies multiple branches of the branched light to multiple AF systems. The detection light for AF is also ideal for making the photoresist of the photosensitive substrate P non-photosensitive. For the optical path between the light source 61 and the photosensitive substrate P, a light of a specific wavelength from the light emitted from the light source 61 is cut off. The composition of the filter. However, in this embodiment, the adjustment system A L is off-center line. When the adjustment process is performed, the relative position of the mask M and the substrate adjustment system A L, that is, the baseline amount is measured. The following describes the baseline measurement method. As shown in Figs. 1 and 2 and Figs. 5A, B, and C, the mask M is provided with a baseline measurement mark (AIS mark on the photomask side) 90, and the substrate stage PST is provided with a baseline measurement. Mark (substrate-side AIS mark) 9 1 reference member 9 2. The formation position (height) of the substrate-side A I S mark 9 1 in the Z-axis direction is set to be slightly coincident with the surface (exposed surface) of the photosensitive substrate P. In addition, the mask side A I S mark 90 is provided in a predetermined positional relationship with respect to a specific position (for example, the center position) of the mask M. The mask side A I S mark 90 and the substrate side A I S mark 9 and 9 1 correspond to each other and are provided in parallel in the Y-axis direction. Figure 2

11246pif.ptd 第35頁 200307182 五、發明說明（31) 所示，在基準構件9 2的下方，可將通過基準構件9 2 的光受光之A I S受光系統9 4埋設於基板載物台P S T中。A I S受光系統9 4具備有透鏡系統9 5 、將通過透鏡系統9 5的光受光之攝像元件（CCD) 9 6 。接著，一面參照圖8 A、B、C 一面說明基線計測程式。如圖8 A所示，基板側A F檢測系統6 0檢測與具有設於基板載物台P S T之基板側A I S標誌9 1的基準構件9 2之間的距離，同時光罩側A F檢測系統7 0檢測與具有光罩側A I S標誌9 0的光罩Μ之間的距離。控制裝置C〇Ν Τ基於基板側A F檢測系統6 0及光罩側A F檢測系統7 0各個的檢測結果，求光罩Μ和基準構件9 2的距離（步驟S A 1 )。 ^ 此時，支援光罩Μ之光罩載物台MS 丁的位置藉由鐳射干涉儀Μ X 1 、Μ X 2、M y 1被檢測，基板載物台PST的位置藉由鐳射干涉儀Pxl 、Px2 、Py 1被檢測。也就是說，光罩Μ (光罩載物台M S Τ )藉由鐳射干涉儀M y 1 ，基板載物台P S Τ藉由鐳射干涉儀P y 1 、P y 2 、P y 3的任一個都可檢測Υ軸方向座標。接著，如圖8B所示，控制裝置C〇NT藉由所謂的自動調光顯示（Τ T L )方式，以攝像元件9 6檢測光罩Μ的AI S標誌90和基板載物台PST上的AI S 標誌9 1 ，並基於該檢測結果求光罩Μ和基板載物台Ρ11246pif.ptd Page 35 200307182 5. According to the description of the invention (31), below the reference member 92, an A I S light receiving system 94 that receives light from the reference member 9 2 can be buried in the substrate stage P S T. The A I S light receiving system 9 4 includes a lens system 9 5 and an imaging element (CCD) 9 6 that receives light passing through the lens system 95. Next, the baseline measurement method will be described with reference to Figs. 8A, B, and C. Figs. As shown in FIG. 8A, the substrate-side AF detection system 60 detects the distance from the reference member 9 2 having the substrate-side AIS mark 9 1 provided on the substrate stage PST, and the mask-side AF detection system 7 0 The distance from the photomask M having the photomask-side AIS mark 90 is detected. The control device CONT determines the distance between the mask M and the reference member 92 based on the detection results of each of the substrate-side A F detection system 60 and the mask-side A F detection system 70 (step S A 1). ^ At this time, the position of the mask stage MS D supporting the mask M is detected by the laser interferometers MX 1, MX 2, and M y 1, and the position of the substrate stage PST is by the laser interferometer Pxl , Px2, Py 1 are detected. In other words, the photomask M (photomask stage MS T) uses a laser interferometer M y 1, and the substrate stage PS T uses any of the laser interferometers P y 1, P y 2, and P y 3. Both can detect the y-axis coordinate. Next, as shown in FIG. 8B, the control unit CONT detects the AI S mark 90 of the photomask M and the AI on the substrate stage PST by the camera element 96 using a so-called automatic dimming display (TT TL) method. S mark 9 1, and obtain the photomask M and the substrate stage P based on the detection result

11246pif.ptd 第36頁 200307182 五、發明說明（32) S T的相對位置（步驟S A 2 )。11246pif.ptd Page 36 200307182 V. Description of the invention (32) The relative position of S T (step S A 2).

具體來說，控制裝置C〇NT移動光罩載物台MS T及基板載物台P S T以藉由攝像元件9 6使光罩側A 1 S標誌9 0的像和基板側A I S標誌9 1的像一致，並藉由照明光學系統I L照明光罩Μ的光罩側A I S標誌9 0 。通過光罩Μ的照明光（曝光光）在通過投影光學系統P L的同時通過基板側A I S標誌9 1 ，並被導向攝像元件9 6 。這裏，控制裝置CONT基於藉由步驟S A 1所求得的光罩Μ和基準構件9 2的距離，調整基板載物台P S Τ在Ζ軸方向的位置和投影光學系統Ρ L的像特性，並使光罩側A I S標誌9 0及基板側A I S標誌9 1各個的像藉由攝像元件9 6而成像（聚焦 )。此時，支援光罩Μ之光罩載物台MST的位置藉由 ί雷射干涉儀Μ X 1 、Μ X 2、M y 1被檢測，基板載物台P ST的位置藉由鐳射干涉儀Pxl 、Px2 、Py 1被檢測。另外，使用曝光光藉由攝像元件9 6將A I S標誌9 0、9 1攝像時，為了在攝像元件9 6上得到最適的光量（照度），可驅動例如照明光學系統I L内的濾光器1 3 。Specifically, the controller CONT moves the photomask stage MS T and the substrate stage PST so that the image of the photomask side A 1 S mark 90 and the image of the substrate side AIS mark 9 1 by the imaging element 96. The image is consistent, and the mask-side AIS mark 90 of the mask M is illuminated by the illumination optical system IL. The illumination light (exposure light) passing through the mask M passes through the projection optical system P L while passing through the substrate-side A IS mark 9 1 and is guided to the imaging element 9 6. Here, the control device CONT adjusts the position of the substrate stage PS T in the Z-axis direction and the image characteristics of the projection optical system PL based on the distance between the mask M and the reference member 92 obtained in step SA1, and The image of each of the mask-side AIS mark 90 and the substrate-side AIS mark 91 is imaged (focused) by the imaging element 96. At this time, the position of the mask stage MST supporting the mask M is detected by the laser interferometers M X 1, M X 2, and M y 1, and the position of the substrate stage P ST is the laser interferometer. Pxl, Px2, and Py 1 are detected. In addition, when the AIS marks 90 and 91 are captured by the imaging element 96 using the exposure light, in order to obtain the optimum light amount (illumination) on the imaging element 96, for example, the filter 1 in the illumination optical system IL can be driven 3.

接著，如圖8C所示，控制裝置C〇NT移動基板載物台P S T，並使基板載物台P S T的A I S標誌9 1 和調正系統A L的計測區域中心（具體地說是設于計測區域的指標標誌）一致，藉由鐳射干涉儀Ρ X 1 、Ρ X 2 、P y 1檢測此時的基板載物台P S T的位置（步驟Next, as shown in FIG. 8C, the control unit CONT moves the substrate stage PST, and sets the AIS mark 9 1 of the substrate stage PST and the measurement area center of the adjustment system AL (specifically, it is located in the measurement area). Index indicators) are consistent, and the position of the substrate stage PST at this time is detected by the laser interferometers P X 1, P X 2, and P y 1 (steps

11246pif.ptd 第37頁 200307182 射統的正 t設9統整，標鐳系線置調，先、系調7定用正基載C 亍預ο學率2 、利調之所合 W每9光倍、移之和得上吻 W及誌影、4位得Μ求T置^0}標投92的求罩所S位 g等S動1鏡個所光於PM U天I驅置棱各 3求基台罩』每A面裝角g 處 A可，物光光、述一移直L S，後載對曝時上，位的P 驟果然板L 每小將像像置~ 步結。基A 在ο面攝的裝a 及測量使統可1 一行}整L 2檢線T系 t每可進g調P A置基N正tt>如。6L轉統 S位即〇調 ^例行9P旋系。驟台置C由進件~為學性步物位置藉，間數元a作光特 33)。由載對裝P 外時批像L及影像藉的相制板 Η定定攝P3投等明另說3從儀的控基所所由C2整轉 ΙΑ 涉L，光。隔的藉L置調旋、S 干Α量感} 每定1 P裝並及五11246pif.ptd Page 37 200307182 The positive system of the radio system is set to 9 systems, the standard radium system line is set to adjust, the first system system is set to 7 with a positive base load C, the pre-learning rate 2, and the power of the system is adjusted to 9 light. The fold, the sum of the shifts can be kissed and Zhiying, the 4th position can be obtained, and the T position can be set to ^ 0} The standard position 92 can be set to the S position, the g position, the S position, the S position, the 1 position, the light position, and the PM position. Seek the abutment cover ”A can be installed at the corner g of each A surface. The light and light can be shifted to LS, and when the rear load is exposed, the position P suddenly turns out that the image of the plate L is set at every step. The installation and measurement of the base A on the surface can be performed in one row} the entire L 2 inspection line T system t can be adjusted into g A and the base N is set to tt > such as. The 6L conversion system S position is the 0-adjustment routine 9P rotation system. Step C is borrowed from the input part for the learning step position, and the number a is used as the light feature 33). From the installation and installation of the external image L and the borrowed phase of the image control board, the fixed photo P3 cast, etc. It is also said that the control unit of the 3 slave instrument is converted by C2 ΙΑ involves light and light. I ’m using L to set the spin, S to dry the volume.

11246pif.ptd 第38頁 200307182 4 ， 3 ^(定列明說設明彳發？、並五並個 3 圖向方軸 Y 在 9 A P 7 A P 域區成形案圖 A p 域區 ο 成《設形11246pif.ptd Page 38 200307182 4, 3 ^ (Determining that the designation is clearly issued ?, and merge the 3 graphs to the 3rd axis Y in the 9 AP 7 AP domain area forming a map A p domain area. shape

方軸 X 在個 1 每的 9 A P Y諸 1 在標m ，正誌且調標而，正。中調向6使方m以軸了 YT—| 定於m設大諸先得標預定正被設調隔被個間小多的大的個的列各向並6 上向方轴 ΠΊ配 ~ 2 1 m m 、諸A 、標 P 1—_ 正、A 調5 P ，A域 9 P區 A 、成 P 2形、A案 6 P圖 A域于 P區置、成配 3形6 A 案m P圖、域于5 區置m 成配誌形4標案m正圖、調于3 ，置m 8 ~圖配 1在角 m,四諸置的標配個正隔一調間每的的之列定9 並設A 上先P 向預、方有6 軸隔A Y上P 在向、。方3 7軸A A X P P在域、由區 4藉成 A 6形 p m案 A ，四 P 4的、]11個 2 、一 A 3每 pm之域誌9 區標A 成正P 形調、案置4 圖配A 在角P ，四、 2的1 m個 A 、-P 1每域 m之區諸8成標A形正P案調、圖置5在的列並向方 ιά γ 在將情酌 ο 5 CO -0- m明、說 5的 m下誌以標在正，調裏置這配角 R 2 B R 區B 分區V1分為稱為 3稱 A 6 PA ~ p 1 ~ A 4 PA 域p 區域成區形成案形圖案圖案將圖，將 3 R B 區分The square axis X is 1 and each of the 9 A P Y 1s is at the standard m. The middle direction 6 makes the square m axis YT— | It is set at m and the first bids are scheduled to be set. The columns are spaced from each other and are aligned in 6 directions. 2 1 mm, various A, standard P 1 — _ positive, A tone 5 P, A domain 9 P area A, form P 2 shape, A case 6 P picture A domain is placed in P area, form 3 shape 6 A case m P picture, set m in area 5 to form a plan with a plan of 4 m, adjust it to 3, set m 8 ~ map with 1 at angle m, and the four different standards are equipped with a positive compartment Set 9 and set P to A in advance, and there will be 6 on the axis AY and P in to,. Square 3 7-axis AAXPP in the domain, borrowed from area 4 into A 6 shape pm case A, four P 4,] 11 2, one A 3 domain mark 9 per pm area mark A into positive P shape, set 4 Figure with A at the corner P, four, two 1 m A, -P 1 in each zone m 8 into a standard A shape P case, set the column in 5 and to the side ο 5 CO -0- m Ming, say 5 m is marked with the positive, the supporting role R 2 BR zone B zone V1 is divided into three called A 6 PA ~ p 1 ~ A 4 PA domain p The area is divided into areas to form a case pattern. The pattern will be divided into 3 RBs.

光、儀感^~~^涉此R干因B射。區鐳分的個列 3並的向割方 ,分軸為向X 稱方在 9軸， AX且 P於而 ~關。 7為3 A定R P設B 域被、區P 2 成板R 形基BLight and instrumentation ^ ~~ ^ Involve this R interference due to B radiation. The radium subdivisions are divided into 3 parallel secant directions, the partial axis is the X direction, the square is on the 9 axis, and AX and P are closed. 7 is 3 A fixed R P set B domain quilt, area P 2 into a plate R-shaped base B

隔R 間B C區置分配個的多 3的 y列 P並 ~向 1方 y轴 PXThe R and B C areas are divided into 3 more y columns P and 1 to the 1 y axis PX

在應與對上3 p R 板B 基、光2 感R 在B 11246pif.ptd 第39頁 200307182 五、發明說明（35) 設定。即，鐳射干涉儀P y 1〜P y 3的間隔按照圖案形成區域PA1 、PA4、PA7在X軸方向的長度被設定。另外，感光基板P為大型基板，移動鏡3 4b在 X轴方向的長度比感光基板P在X轴方向的長度短，移動鏡3 4 b以高加工精度被製造。以下一面參照圖1 〇A、B、C、D〜圖1 5A、B、C、 D及圖1 6 、圖1 7的流程圖一面關於調正處理程式及曝光處理程式進行說明。如利用圖8 A、B、C所述地進行基線計測後，如圖1 0A所示，控制裝置CONT移動基板載物台P ST，並使設於感光基板P的從一X側開始之第1列的調正標誌 ml〜m6的每一個和調正系統AL 1〜AL 6的每一個相對向。如上所述，本實施例基於在感光基板P形成的6調正標誌m 1〜m 6的配置（間隔），設定調正系統 A L 1〜A L 6的配置（間隔）。然後，控制裝置C〇 NT將此時的基板載物台P ST在X軸方向及0 Z方向的位置利用鐳射干涉儀P X 1 、P X 2進行檢測，同時選擇多個鐳射干涉儀P y 1〜P y 3中與圖案形成區域 P A 1〜P A 3 (分區B R 1 )對應之1個鐳射干涉儀 P y 1 ，並將基板載物台P ST在Y軸方向的位置用鐳射干涉儀P y 1進行檢測。此時，鐳射干涉儀P y 2、 P y 3不和移動鏡3 4 b對向。然後，控制裝置C〇N T 一面藉由4雷射干涉儀檢測基板載物台P S T的位置，一面以使調正系統A L 1〜A L 6和從-X側開始的第1In the corresponding pair 3 p R board B base, light 2 sense R in B 11246pif.ptd page 39 200307182 V. Description of invention (35). That is, the interval of the laser interferometers P y 1 to P y 3 is set in accordance with the length in the X-axis direction of the pattern formation areas PA1, PA4, and PA7. In addition, the photosensitive substrate P is a large substrate, and the length of the moving mirror 3 4b in the X-axis direction is shorter than the length of the photosensitive substrate P in the X-axis direction. The moving mirror 3 4 b is manufactured with high processing accuracy. The following describes the adjustment processing program and the exposure processing program with reference to the flowcharts of FIG. 10A, B, C, and D to FIG. 15A, B, C, D, and FIG. 16 and FIG. 17. After the baseline measurement is performed as described in FIGS. 8A, B, and C, as shown in FIG. 10A, the control device CONT moves the substrate stage PST, and sets the first position from the X side of the photosensitive substrate P. Each of the alignment marks ml to m6 in one column is opposite to each of the alignment systems AL 1 to AL 6. As described above, this embodiment sets the arrangement (interval) of the adjustment systems A L 1 to A L 6 based on the arrangement (interval) of the six adjustment marks m 1 to m 6 formed on the photosensitive substrate P. Then, the controller CONT detects the positions of the substrate stage P ST at this time in the X-axis direction and the 0 Z direction by using laser interferometers PX 1 and PX 2, and simultaneously selects a plurality of laser interferometers P y 1 ~ One laser interferometer P y 1 corresponding to the pattern forming areas PA 1 to PA 3 (area BR 1) in P y 3, and the position of the substrate stage P ST in the Y-axis direction with the laser interferometer P y 1 Check it out. At this time, the laser interferometers P y 2 and P y 3 are not opposed to the moving mirror 3 4 b. Then, the control device CONT detects the position of the substrate stage P S T with a 4 laser interferometer, while adjusting the alignment system A L 1 to A L 6 and the first from the -X side.

11246pif.ptd 第40頁 200307182 五、發明說明（36)11246pif.ptd Page 40 200307182 V. Description of the Invention (36)

列調正標誌m 1〜m 6對向之狀態，同時檢測與在Y軸方向多個並列之圖案形成區域（曝光區域）PA1〜P A 3的每一個相對應的調正標諸m 1〜m 6 (步驟S B 1 ) ° 此時，在圖案形成區域P A 1上配置有2個調正標誌m 5 、m 6 ，在圖案形成區域P A 2上配置有2個調正標誌m3 、m4 ，在圖案形成區域PA3上配置有2 個調正標誌m 5 、m 6 ，與這些調正標誌相對應，對圖The alignment marks m 1 to m 6 face each other and simultaneously detect alignment marks m 1 to m corresponding to each of a plurality of parallel pattern formation areas (exposure areas) PA1 to PA 3 in the Y-axis direction. 6 (Step SB 1) ° At this time, two adjustment marks m 5 and m 6 are arranged on the pattern forming area PA 1, and two adjustment marks m 3 and m 4 are arranged on the pattern forming area PA 2. The formation area PA3 is provided with two adjustment marks m 5 and m 6 corresponding to these adjustment marks.

案形成區域P A 1配置有2個調正系統A L 5 、A LThe plan formation area P A 1 is configured with two adjustment systems A L 5 and A L

6 ，對圖案形成區域P A 2配置有2個調正系統A L 3 、A L 4 ，對圖案形成區域P A 3配置有2個調正系統A L 1 、A L 2 。即，多個調正系統A L 1〜A L 6 為與在Y軸方向並列之圖案形成區域（曝光區域）PA ]/〜PA3 (PA4 〜PA6 、PA7 〜PA9)的每一個對應各配置2個之構成。接著，如圖1 0B所示，控制裝置C〇NT將基板載物台P ST在一 X方向移動，並使設於感光基板P的從一 X側開始之第2列的調正標諸m 1〜m 6的每一個和調正系統A L 1〜A L 6的每一個相對向，在藉由鐳射干涉儀P y 1檢測基板載物台P S T在Y軸方向之位置的同時，藉由鐳射干涉儀P X 1 、P X 2檢測基板載物台P S T在X軸及0 Z方向之位置，並同時檢測各個調正標諸ml〜m6 (步驟SB2)。控制裝置CONT對圖案形成區域PA 1〜PA36. Two adjustment systems A L 3 and A L 4 are arranged in the pattern forming area P A 2, and two adjustment systems A L 1 and A L 2 are arranged in the pattern forming area P A 3. That is, each of the plurality of adjustment systems AL 1 to AL 6 is arranged corresponding to each of the pattern formation areas (exposure areas) PA] / ~ PA3 (PA4 to PA6, PA7 to PA9) in the Y-axis direction. Make up. Next, as shown in FIG. 10B, the control unit CONT moves the substrate stage P ST in an X direction, and causes the second calibration column m provided on the photosensitive substrate P from the X side to be aligned. Each of 1 to m 6 and each of the adjustment systems AL 1 to AL 6 are opposed to each other, and a laser interferometer P y 1 is used to detect the position of the substrate stage PST in the Y-axis direction while laser interference The instruments PX 1 and PX 2 detect the position of the substrate stage PST in the X-axis and 0 Z directions, and simultaneously detect each of the calibration standards ml to m6 (step SB2). The control device CONT controls the pattern formation areas PA 1 to PA 3

11246pif.ptd 第41頁 200307182 五、發明說明（37) 的每一個，在X軸方向上間隔所定距離的2個位置，進行第1列的調正標誌及第2列的調正標誌的位置檢測，基於這些檢測結果，求修正關於各圖案形成區域P A 1 〜P A 3的位移、定標及旋轉等像特性之修正參數（步驟 S B 3 )。這裏，第1列的調正標誌檢測後，為了檢測第2列的調正標誌，感光基板P要對調正單元U進行掃描，但是，此時調正單元U中在Y軸方向並列之多個基板檢測系統6 0 a〜6 0 g的每一個，在X軸方向以所定距離間隔檢測感光基板P的表面高度位置。即，感光基板P 的表面高度位置在棋盤格狀的多個位置被檢測，這些基板A F檢測系統6 0 a〜6 0 g各個的檢測結果被輸出到控制裝置C〇N T，控制裝置C〇N T基於基板A F 檢'測系統6 0 a〜6 0 g的檢測結果，求感光基板P的圖案形成區域PA1〜PA3各個的表面形狀（步驟S B 4 )。然而，如上所述，在多個調正系統A L 1〜A L 6 中的外側2個調正系統系統A L 1及A L 6上，基板A F檢測系統6 0 a及6 0 g鄰接設置。因此，藉由一面利用基板A F檢測系統6 0 a及6 0 g監控感光基板P 在Z軸方向之位置資訊，一面利用調正系統進行調正處理，在調正處理時，能夠抑制以感光基板P從投影光學系統的成像面向Z軸方向有大的偏離之狀態進行調正處理的不良情況。11246pif.ptd Page 41 200307182 V. Each of the description of the invention (37), two positions spaced apart by a predetermined distance in the X-axis direction, the position detection of the alignment mark in the first column and the alignment mark in the second column Based on these detection results, correction parameters for correcting image characteristics such as the displacement, scaling, and rotation of each of the pattern forming regions PA 1 to PA 3 are obtained (step SB 3). Here, after the detection of the alignment marks in the first column, in order to detect the alignment marks in the second column, the photosensitive substrate P needs to scan the alignment unit U. However, at this time, a plurality of the alignment units U are juxtaposed in the Y-axis direction. Each of the substrate detection systems 60 a to 60 g detects the surface height position of the photosensitive substrate P at a predetermined distance in the X-axis direction. That is, the surface height position of the photosensitive substrate P is detected at a plurality of positions in a checkerboard shape, and the detection results of each of the substrate AF detection systems 60 a to 60 g are output to the control device CONT and the control device CONT. Based on the detection results of the substrate AF inspection system 60 a to 60 g, the surface shape of each of the pattern forming regions PA1 to PA3 of the photosensitive substrate P is obtained (step SB 4). However, as described above, the substrate A F detection systems 60 a and 60 g are disposed adjacently to the two outer adjustment systems A L 1 and A L 6 among the plurality of adjustment systems A L 1 to A L 6. Therefore, by using the substrate AF detection systems 60 a and 60 g to monitor the position information of the photosensitive substrate P in the Z-axis direction, and using the calibration system to perform the calibration process, it is possible to suppress the use of the photosensitive substrate during the calibration process. P has the disadvantage of performing a correction process with a large deviation from the imaging surface of the projection optical system in the Z-axis direction.

11246pif.ptd 第42頁 200307182 五、發明說明（38) 而且，在調正系統AL 1〜AL6上如利用圖6所述，設有探測用的低倍率調正受光系統8 8和精密調正用的高倍率調正受光系統8 9 。因此，例如當不能進行使用高倍率調正受光系統8 9之調正標誌檢測時，藉由切換為低倍率調正受光系統8 8進行調正標誌檢測，使調正標認檢測成為可能。這樣，藉由切換低倍率及高倍率調正受光系統進行調正標誌檢測，可順利地進行調正處理。另外，低倍率及高倍率調正受光系統沒必要設於所有的調正系統A L 1〜A L 6 ，可至少設於外側2個調正系統A L 1及A L 6 。當然即使在所有的調正系統 AL 1〜AL 6上進行設置也並無不可。接著，控制裝置C〇NT基於藉由步驟SB 3求得之修正參數修正像特性後，一面藉由鐳射干涉儀P y 1 及P X 1 、P X 2進行基板載物台P S T的位置檢測，11246pif.ptd Page 42 200307182 V. Description of the invention (38) Furthermore, as described in FIG. 6, the correction systems AL 1 to AL6 are provided with a low-magnitude correction light-receiving system for detection 8 8 and precision adjustment The high magnification is adjusted by the light receiving system 8 9. Therefore, for example, when the detection of the alignment mark using the high-magnitude correction light receiving system 88 can not be performed, the detection of the alignment mark can be performed by switching to the low-magnification correction light receiving system 88. In this way, by switching the low-magnification and high-magnitude correction light receiving systems for detection of the correction mark, the correction processing can be performed smoothly. In addition, the low and high magnification correction light receiving systems do not need to be provided in all the adjustment systems A L 1 to A L 6, and may be provided in at least two outer adjustment systems A L 1 and A L 6. Of course, it is not necessary to set it on all the adjustment systems AL 1 to AL 6. Next, the control unit CONT corrects the image characteristics based on the correction parameters obtained in step SB 3, and then detects the position of the substrate stage P S T by the laser interferometers P y 1 and P X 1 and P X 2.

一面進行對圖案形成區域PA 1的曝光處理（步驟S B 5 ) ° 即，如圖1 0C所示，控制裝置C〇NT移動基板載物台P S T以使投影光學系統P L和圖案形成區域P A 1的+ X側末端對向。同時，控制裝置C〇N T也將圖 1 0C中不圖示的支援光罩Μ之光罩載物台MS T在一X 側移動，並使光罩Μ對感光基板P位置吻合。然後，藉由一面使光罩Μ和感光基板Ρ對投影光學系統P L在+ X方向上同步移動，一面以曝光光E L照明光罩Μ，對圖案形成區域PA 1進行曝光處理。圖1 0D所示為對圖One side is exposed to the patterning area PA 1 (step SB 5) ° That is, as shown in FIG. 10C, the control device CONT moves the substrate stage PST so that the projection optical system PL and the patterning area PA 1 + The X side ends are opposite. At the same time, the control device CONT also moves the mask stage MS T supporting the mask M, which is not shown in FIG. 10C, on the X side, and makes the mask M coincide with the position of the photosensitive substrate P. Then, the mask M and the photosensitive substrate P are moved synchronously in the + X direction to the projection optical system PL while the mask M is illuminated with the exposure light EL to expose the pattern formation area PA1. Figure 1 0D shows the pair diagram

11246pif.ptd 第43頁 200307182 五、發明說明（39) 案形成區域P A 1之掃描曝光結束後的狀態。這裏，基於藉由步驟SB 4求得之感光基板P (圖案形成區域P A 1 )的表面形狀資料，為了使投影光學系統的成像面和感光基板P的表面一致’一面使基板載物台P ST在 Z軸方向或0X、0Y方向上移動，控制感光基板P的姿式，一面進行掃描曝光。另外，多個投影光學系統P L a〜P L g中，不使用的投影光學系統（例如從圖案形成區域P A 1超出之投影光學系統P L a 、P L g等 )藉由照明快門6遮蔽其光程。接著，控制裝置C〇N T基於修正參數修正像特性後，一面藉由鐳射干涉儀Pyl及Ρχΐ 、Ρχ2進行基板載物台P S T的位置檢測，一面進行對圖案形成區域PA1的曝光處理（步驟SB6)。 ^ 即，如圖1 1A所示，控制裝置CONT在一Y方向步進移動基板載物台P S T以使投影光學系統P L和圖案形成區域P A 2的一 X側末端對向。此時，光罩載物台M S T為了使光罩Μ和感光基板P的位置吻合只進行微動，可基本不移動。然後，藉由一面使光罩Μ和感光基板Ρ對投影光學系統P L在一X方向上同步移動，一面以曝光光E L照明光罩Μ，對圖案形成區域P A 2進行曝光處理。圖1 1B所示為對圖案形成區域PA 2之掃描曝光結束後的狀態。即使在對圖案形成區域P A 2之掃描曝光時，基於藉由步驟S B 4求得之圖案形成區域 P A 2的表面形狀資料，可一面進行感光基板P在Z軸11246pif.ptd Page 43 200307182 V. Description of the invention (39) The state after the scanning exposure of the area P A 1 is completed. Here, based on the surface shape data of the photosensitive substrate P (pattern forming area PA 1) obtained in step SB 4, the substrate stage P ST is made to match the imaging surface of the projection optical system with the surface of the photosensitive substrate P. Move in the Z-axis direction or in the 0X and 0Y directions to control the posture of the photosensitive substrate P, and perform scanning exposure on one side. In addition, among the plurality of projection optical systems P L a to P L g, projection optical systems that are not used (for example, projection optical systems P L a, P L g, etc., which extend beyond the pattern forming area P A 1) are shielded from the optical path by the illumination shutter 6. Next, after the control device CONT corrects the image characteristics based on the correction parameters, the position detection of the substrate stage PST is performed by the laser interferometers Pyl and Pχΐ, Pχ2, and the exposure processing of the pattern formation area PA1 is performed (step SB6) . That is, as shown in FIG. 1A, the control device CONT moves the substrate stage P S T stepwise in a Y direction so that the projection optical system PL and an X-side end of the pattern forming area P A 2 face each other. At this time, the reticle stage M S T is moved only slightly in order to match the positions of the reticle M and the photosensitive substrate P, and may not be moved substantially. Then, the mask M and the photosensitive substrate P are moved in synchronization with the projection optical system PL in the X direction while the mask M is illuminated with the exposure light EL to expose the pattern formation area P A 2. Fig. 11B shows a state after the scanning exposure of the pattern forming area PA 2 is completed. Even during scanning exposure of the pattern forming area P A 2, based on the surface shape data of the pattern forming area P A 2 obtained in step S B 4, the photosensitive substrate P can be performed on the Z axis in one side.

11246pif.ptd 第44頁 20030718211246pif.ptd Page 44 200307182

Jl 處。光光曝曝描描掃掃的行1 進A 面P 一域制區控成平形調案及圖制對控在 40置， {位裏明說的這發向 2.'方五At Jl. Light Exposure Exposure Scanning Scanning Line 1 Enter A surface P One domain control area is flat and the plan and control are set at 40. {Wang Liming said this direction 2. 'Fang Wu

P感域，區時成理形處案光圖曝對描在掃，的描2 掃A 向P 方域 X區 +成在形 P案板圖基之光接感鄰 ·/ ΊΧ 時A 並軸向向X方方之軸軸應Y Y對沿沿個在與一由在每藉用的，採3後，A諸即P標。-正描1調掃A測向P檢方域置 X區位 I 成處在形2 P案的板圖上基的向光列方的裝向光逆曝此高彼提上可 2此 A藉 ρ 〇、成 1構 A之 p P 域板區基成光形感案光圖曝個而多動的移接步鄰同曝處的光域曝區的成域形區案成圖形個案 1X 1111 對一來下原對，行即進〇 ^ 力為能，產後生束的結體理整處置光狀結幅始理大初處需回光無返曝時以的理動域處移區光幅成曝大形行上案進向圖域方個區描1成掃對形在在案 Μ例圖罩施一光實下使本對須是在必但，，，後理態‘束動形移案的圖罩，光中該例少施減實夠本能在以且所而 1 Ο }力台能物產載生罩高光提 C而罩從光，動間移時動轴向移Υ 方幅在描大Ρ 掃上板比向基小方光大描感的掃使 }在，向罩示方光所軸使A Y與1 IX C以向所方，歹 D 描小ο 掃} 1 非向圖在方如域軸，區X比成{相圖性特像正修。數的參效正有修是於離基距T 動N 移〇短C 縮置對裝動制移控進，步著上接向方行區進成 2形 X案 P圖、對 1行 X進。 P 面及一 7 1 ， B y測 S P檢驟儀置步涉位彳干的理射T處鐳S光由P曝藉台的面物3 一載A ，板P 後基域P sense zone, the time zone is in the physical shape, the case light is exposed to the scan, and the scan 2 scans A to the P square field X area + the light in the shape of the P case board is touched by the neighbor. / × A parallel axis The axis of the X direction is to be borrowed by the YY pair along the one and one by one. After taking 3, A is the P mark. -Forward drawing 1 A scanning direction finding P detection area X area I into the shape of the 2 P case on the board of the light column side of the installation of the light to the reverse exposure of this high can be raised 2 this A borrow ρ 〇, the structure of the p P domain of the structure A of the structure of the light is exposed to the light shape, and the moving image of the moving area is adjacent to the light exposure area of the same exposure area. As soon as the original pair is in place, you can move forward. The force is the power. The post-partum knots are organized and processed. The light-shaped knots are treated at the beginning of the university. Expose the large form to the front of the case and draw a pair of scans in the picture area. In the case of the case, a pair of photos must be applied to make the pair must be in a necessary state. In the photo cover, this example of light reduction is enough to be instinctual. Therefore, the energy-saving cover of the platform can lift the high light and lift the C, and the cover moves from the light to the light. Ρ Sweeping the upper plate is larger than that of Xiang Jifang, and the sweeping sensation is in the direction, showing the axis of Fang Guang's axis to make AY and 1 IX C to the side, 歹 D is smaller ο scan} 1 As the temporal-axis direction in FIG, into region X from the phase diagram of {Laid Zhengxiu image. The positive effect of the number is to move from the base distance T to move N. Short C. Condensation to move to the movement control system. Step up to the square line to form a 2-shaped X case. P picture, and 1 line X. Advance. P surface and a 7 1, B y measurement SP detector stepped on the position of the target T radium S light exposed by P exposed on the surface of the loaner 3 A, the base area after the plate P

11246pi f.ptd 第45頁 200307182 五、發明說明（41) 即，如圖1 1C所示，控制裝置C〇NT在一Y方向步進移動基板載物台P S T以使投影光學系統P L和圖案形成區域P A 3的+ X側末端對向。此時，光罩載物台MS T為了使光罩Μ和感光基板P的位置吻合也只進行微動，可基本不移動。然後，藉由一面使光罩Μ和感光基板Ρ對投影光學系統P L在+ X方向上同步移動，一面以曝光光E L照明光罩Μ，對圖案形成區域P A 3進行曝光處理。圖1 1D所示為對圖案形成區域PA3之掃描曝光結束後的狀態。即使在對圖案形成區域P A 3之掃描曝光時，基於藉由步驟S B 4求得之圖案形成區域 P A 2的表面形狀資料，可一面進行感光基板P在Z軸方向的位置控制及調平控制一面進行掃描曝光。在這種情況下，也採用對圖案形成區域P A 3的曝光處理時的掃‘描方向，被設定成對鄰接之圖案形成區域P A 2的曝光處理時的掃描方向之逆方向的構成。上述步驟SB 1〜SB 7之基板載物台P ST在X 軸方向的位置檢測，即對多個圖案形成區域P A 1〜P A3 (分區BR1)之調正處理及曝光處理中X軸方向的位置檢測，如圖1 0A、B、C、D及圖1 1A、B、C、D 所示，藉由錯射干涉儀P x 1 、P x 2進行，在Y軸方向的位置檢測藉由4雷射干涉儀P y 1進行。即，在X轴方向多個並列之鐳射干涉儀P y 1〜P y 3中用於位置檢測的鐳射干涉儀為1個P y 1 。然後，藉由該1個鐳11246pi f.ptd Page 45 200307182 V. Description of the invention (41) That is, as shown in FIG. 1C, the control device CONT moves the substrate stage PST in a Y-direction step to form the projection optical system PL and the pattern. The + X side ends of the area PA 3 face each other. At this time, in order to match the positions of the photomask M and the photosensitive substrate P, the photomask stage MS T may be moved only slightly, and may not be moved substantially. Then, the mask M and the photosensitive substrate P are simultaneously moved in the + X direction to the projection optical system PL while the mask M is illuminated with the exposure light EL to expose the pattern formation area P A 3. FIG. 1D shows a state after the scanning exposure of the pattern forming area PA3 is completed. Even during the scanning exposure of the pattern forming area PA 3, based on the surface shape data of the pattern forming area PA 2 obtained in step SB 4, the position control and leveling control of the photosensitive substrate P in the Z axis direction can be performed Make a scan exposure. In this case, the scanning direction during the exposure processing of the patterned area P A 3 is also set to be the reverse direction of the scanning direction during the exposure processing of the adjacent patterned area P A 2. In the above steps SB1 to SB7, the position of the substrate stage P ST in the X-axis direction is detected, that is, the X-axis direction in the alignment processing and exposure processing of a plurality of pattern forming areas PA 1 to P A3 (zone BR1) Position detection, as shown in Figures 10A, B, C, and D, and Figures 1A, B, C, and D, are performed by stray interferometers P x 1 and P x 2, and position detection in the Y-axis direction is performed by 4 Laser interferometer P y 1 is performed. That is, one laser interferometer for position detection among a plurality of parallel laser interferometers P y 1 to P y 3 in the X-axis direction is one P y 1. Then, with the 1 radium

射干涉儀P y 1進行位置檢測，並基於該鐳射干涉儀PThe radio interferometer P y 1 performs position detection and is based on the laser interferometer P

11246pif.ptd 第46頁 200307182 2 4 明說明發 i> 感形和案 Μ圖罩于光光行曝進被且案測圖檢的誌Μ 標罩正光調，行後進理值處測正檢調置的位Ρ 的板 1基 y光並續個連多次向依方被軸個 Y 一在每裏的這3，A 且P 而- ο IX 3 A A ρ Ρ域 ~區 Τ—I成 A形 P案域圖區之成9 ~ 1檢 1R置 yB 位 P區於儀分用涉C被干3可射A成鐳P形個~ 1 1—Hy ，A P 中P儀光域涉曝區干續成射連形鐳該案的在圖定時與特同中之，3應光y對曝P } 移面一 T N 〇 C 置裝制控示所 A 2 IX 圖如 ο ? 成著構接之測11246pif.ptd Page 46 200307182 2 4 It is stated that the sensory shape and the image mask are exposed to light and light, and the image mask is checked for positive light tone. The set plate P has 1 base of y light and has been connected to each other several times in a row. The Y, the 3, A and P in each mile, and-ο IX 3 AA ρ P domain ~ area T-I into A The shape of the P area map area is 9 ~ 1. 1R is set to yB. The P area is located in the instrument. It is used for C. The 3 can be shot into A radium P shape ~ 1 1—Hy. The exposure area of the P instrument light area in the AP. In the case of continuous and continuous radium radium, the timing and characteristics of the case are as follows: 3 should be exposed to light y P} Move the surface a TN 〇C installation control institute A 2 IX The picture is as follows: Test

側統N X系〇 I 正C 從調置之與裝 P個制板一控基每，光的後感6然於m。設~向使1對面m個一誌一，標每 T正的 S調6 P的L 台列A 物3 ~ 載第1 板始L 基開A 區涉成干形射案鐳圖個與1 中之 3應 y對 ρ 12 τ—- R yB P區儀分涉C 干6 射Α 鐳Ρ 個~ 多4 擇A 選P T ‘域The side system N X system 〇 I positive C from the adjustment and installation of P control board and a control unit, the light after 6 is m. Suppose that there are 1 counters, 1 counter, 1 counter, and 6 counters for each positive T. The target A is set to 3 and contains the first board. The base area of the base and the base is in the A area. 3 of the y pairs should be ρ 12 τ—- R yB P zone instrumentation involves C stem 6 shots Α radium P ~ more 4 choose A choose PT 'domain

在Y T在 s T p S 厶口 P 物台載物板載基板隨基伴於丁用 N將〇， C動置移裝的制置控位。之 2向 y方 P軸儀X y〇 rH ρ Λν X 儀8 ρ 涉Β儀干S涉射驟干鐳步射從彳鐳，2用儀y利涉 PT 干儀N 射涉ο 鐳干C 之射置測鐳裝檢的制置擇控位選，的該後向為然方換軸切 Z物藉 0載面及板一向基T 方測N 軸檢ο X 2 C 在y置 T P裝 S儀制 P涉控厶口干。物射置載鐳位板用的基利向的時方時同軸此，Y 測置在檢位T 2的S X向 P P方厶口使正以調面的一列，3 置第位始的開 T側 S X P I 台從物和載6 板L 基A 測~ 檢1 儀L 涉A 干統射系鐳正由調 11246pif.ptd 第47頁 200307182At Y T at s T p S 厶口 P stage Carrier On-board substrate With the base Ding N, 〇, C move the installation control position. The 2-axis Y-axis P-axis instrument X y〇rH ρ Λν X instrument 8 ρ She B Yigan S She shoots the sudden dry laser step from the radium, 2 uses the instrument y Lishe PT dry instrument N shoot She ο radium dry C The position setting of the laser installation inspection is controlled by the position selection. The rearward direction is changed. The axis is cut. The Z object is borrowed from the 0 surface and the plate is based on the T side. The N axis is inspected. X 2 C is set at y. S instrument system P involves controlling dry mouth. The target orientation of the target position for the radium position plate is coaxial. The Y position of the SX at the position T 2 and the PP side of the PP position are aligned in a row. Side SXPI platform from the object and carrier 6 board L base A measurement ~ inspection 1 instrument L related A main radio system is being adjusted by 11246pif.ptd page 47 200307182

五、發明說明（43) 標諸 m 1 m 6 的每一個對向之狀態 5 同時檢測與在 Y 軸方向多個並列之圖案形成區域 ( 曝光區域 ) P A 4 P A 6 的每一個對應之調正誌* m 1 m 6 ( 步驟 S B 9 ) 〇在將鐳射干涉儀從P y ： 1_切換為】 D y \ 2時，鐳射干涉儀 P y 1 的位置檢測結果被用於鐳射干涉儀 P y 2 的位置檢測〇具體來說控制裝置 C 〇 N T 在從鐳射干涉儀 P y 1 切換為鐳射干涉儀 Ρ y 2 時例如在進行所定次數的藉由鐳射干涉儀 P y 1 之基板載物台 P S T 的位置檢測動作的同時，也進行所定次數的藉由鐳射干涉儀 P y 2 之基板載物台 P S T 的位置檢測動作 5 並求這些檢測結果的平均值的差〇 Pk 後，以該求得的差為修正值並基於該修正值進行藉由鐳射干涉儀 P y 2 之基板物台 P S T 的位置檢測動作〇這樣在關於分區 B R 2 ( 圖案形成區域 P A 4 Ρ A 6 ) 之調正處理的一部分即鐘射干涉儀 P y 2 的位置檢測動作中 J 用到了在 X 軸方向鄰接之分區 B R 1 ( 圖案形成域 P A 1 P A 3 ) 的調正結果的部分即鐳射干涉儀 P y 1 的位置檢測結果〇此時使鐳射干涉儀 Ρ y 2 動作計測錯射干涉儀 P y 1 和 P y 2 的差分作為偏移 1 記憶〇以後 5 基板載物台 P S T 的 Y 座標可藉由鐳射干涉儀 P y 2 的計測值和偏移 1 而求得〇接著，如[ 圖: 1 2B 所示控制裝置 C 〇 N T 在 XV. Description of the invention (43) The state of each of m 1 m 6 facing each other 5 Simultaneous detection and correction corresponding to each of a plurality of parallel pattern formation areas (exposed areas) PA 4 PA 6 in the Y-axis direction * * M 1 m 6 (step SB 9) 〇 When the laser interferometer is switched from P y: 1_ to D y \ 2, the position detection result of the laser interferometer P y 1 is used for the laser interferometer P y 2 position detection. Specifically, when the control device C 〇NT is switched from the laser interferometer P y 1 to the laser interferometer P y 2, for example, the substrate stage PST by the laser interferometer P y 1 is performed a predetermined number of times. At the same time as the position detection operation, the position detection operation 5 of the substrate stage PST by the laser interferometer P y 2 is also performed a predetermined number of times, and the difference between the average values of these detection results is calculated. Difference for correction Based on the correction value, the position detection operation of the substrate stage PST by the laser interferometer P y 2 is performed. In this way, a part of the adjustment processing for the partition BR 2 (pattern forming area PA 4 ρ A 6) is a bell shot. In the position detection operation of the interferometer P y 2 J, the position of the laser interferometer P y 1, which is the part of the adjustment result of the partition BR 1 (pattern formation domain PA 1 PA 3) adjacent to the X axis direction, is used. The laser interferometer P y 2 is operated to measure the difference between the misinterferometer P y 1 and P y 2 as the offset 1 and memorized. 5 The Y coordinate of the substrate stage PST can be measured by the laser interferometer P y 2 Value and offset 1 to obtain 〇 Then, as shown in [Figure: 1 2B control device C 〇NT at X

11246pif.ptd 第48頁 200307182 五、發明說明（44)11246pif.ptd Page 48 200307182 V. Description of the Invention (44)

方向移動基板載物台P S T ’並使設於感光基板P之從 —X側開始第4列的調正標誌m 1〜m 6的每一個與調正系統A L 1〜A L 6的每一個對向，在藉由鐳射干涉儀P y 2檢測基板載物台P S T在Y軸方向之位置的同時，藉由错射干涉儀P X 1 、P X 2檢測基板載物台P S T在X軸方向及0 Z方向之位置，並同時檢測這些調正標誌ml〜m6的每一個（步驟SB 10)。控制裝置CONT對圖案形成區域PA4〜PA6 的每一個，在X軸方向上間隔所定距離的2處位置，進行第1列的調正標誌及第2列的調正標誌的位置檢測，基於這些檢測結果，求修正關於各圖案形成區域P A 4 〜P A 6之移位、定標及旋轉等像特性的修正參數（步驟 S B 1 1 )。 ‘ 這裏，在第3列的調正標誌檢測後，為了檢測第4 列的調正標誌，感光基板P要對調正單元U進行掃描，此時調正單元U中的在Y軸方向並列之多個基板A F檢測系統6 0 a〜6 0 g的每一個，在X軸方向上以所定距離間隔檢測感光基板P之表面的高度位置。這些基板 A F檢測系統6 0 a〜6 0 g的各個檢測結果被輸出到控制裝置C〇N T，控制裝置C〇N T基於基板檢測系統6 0 a〜6 0 g的檢測結果，求感光基板P的圖案形成區域PA4〜PA6各個的表面形狀（步驟SB 1 2 )° 接著，控制裝置C〇NT基於藉由步驟SB 1 1求The substrate stage PST 'is moved in the direction, and each of the alignment marks m 1 to m 6 in the fourth column from the -X side on the photosensitive substrate P is opposed to each of the alignment systems AL 1 to AL 6 While detecting the position of the substrate stage PST in the Y axis direction by the laser interferometer P y 2, the substrate stage PST is detected in the X axis direction and the 0 Z direction by the stray interferometers PX 1 and PX 2. And simultaneously detect each of these adjustment marks ml to m6 (step SB 10). The control device CONT detects the position of the alignment mark of the first column and the alignment mark of the second column for each of the pattern forming areas PA4 to PA6 at two positions spaced apart by a predetermined distance in the X-axis direction. Based on these detections, As a result, correction parameters for correcting image characteristics such as shift, scaling, and rotation of each of the pattern forming regions PA 4 to PA 6 are obtained (step SB 1 1). 'Here, after the detection of the alignment mark in the third column, in order to detect the alignment mark in the fourth column, the photosensitive substrate P needs to scan the alignment unit U. At this time, the alignment unit U is aligned side by side in the Y-axis direction. Each of the substrate AF detection systems 60 a to 60 g detects the height position of the surface of the photosensitive substrate P at a predetermined distance in the X-axis direction. The respective detection results of the substrate AF detection systems 60 a to 60 g are output to the control device CONT. Based on the detection results of the substrate detection system 60a to 60g, the control device CONT obtains the The surface shape of each of the pattern forming areas PA4 to PA6 (step SB 1 2) ° Next, the control device CONT is determined based on the step SB 1 1

11246pif.ptd 第49頁 200307182 五、發明說明（45) 得的修正參數修正像特性後，一面藉由鐳射干涉儀P y 2及P X 1 、p X 2檢測基板載物台P S T的位置，一面進行對圖案形成區域PA4的曝光處理（步驟SB 1 3 ) 〇即，如圖1 2 C所示，控制裝置C〇N T移動基板載物台P S T以使投影光學系統P L和圖案形成區域P A 4的+ X側末端對向。然後，藉由一面使光罩Μ和感光基板Ρ對投影光學系統P L在+ X方向同步移動一面以曝光光E L照明光罩Μ，對圖案形成區域P A 4進行曝光處理。圖1 2D所示為對圖案形成區域PA4之掃描曝光結束後的狀態。這裏，基於藉由步驟S B 1 2求得之感光基板P (圖案形成區域PA4)的表面形狀資料，為了使投影光學系統的成像面和感光基板P的表面一致，一面使基板載物台P ST在Z轴方向或0X、0Y 方向上移動而控制感光基板P的姿式，一面進行掃描曝光。接著，控制裝置C〇N T基於修正參數修正像特性後，一面藉由i雷射干涉儀P y 2及Ρ X 1 、Ρ X 2檢測基板載物台P S T的位置，一面進行對圖案形成區域P A5的曝光處理（步驟SB14)。即，如圖1 3A所示，控制裝置CONT在一Y方向步進移動基板載物台P S T以使投影光學系統P L和圖案形成區域P A 5的一 X側末端對向。此時，光罩載物台M S T為了使光罩Μ和感光基板P的位置吻合只進行11246pif.ptd Page 49 200307182 V. The correction parameters obtained in the description of the invention (45) After correcting the image characteristics, the position of the substrate stage PST is detected by the laser interferometer P y 2 and PX 1 and p X 2 Exposure processing to the pattern forming area PA4 (step SB 1 3). That is, as shown in FIG. 12C, the control device CONT moves the substrate stage PST so that the projection optical system PL and the pattern forming area PA 4+ The X-side ends are opposite. Then, the mask M and the photosensitive substrate P are moved synchronously with the projection optical system P L in the + X direction to illuminate the mask M with the exposure light EL to expose the pattern formation area P A 4. Fig. 12D shows a state after the scanning exposure of the pattern forming area PA4 is completed. Here, based on the surface shape data of the photosensitive substrate P (pattern forming area PA4) obtained in step SB 1 2, in order to make the imaging surface of the projection optical system and the surface of the photosensitive substrate P coincide, the substrate stage P ST Scanning exposure is performed while moving the Z-axis direction or the 0X and 0Y directions to control the posture of the photosensitive substrate P. Next, the control device CONT corrects the image characteristics based on the correction parameters, and detects the position of the substrate stage PST with the i laser interferometer P y 2 and P X 1 and P X 2, and performs the pattern forming area P A5 exposure processing (step SB14). That is, as shown in FIG. 13A, the control device CONT moves the substrate stage P S T in a Y direction so that the projection optical system PL and an X-side end of the pattern forming area PA 5 face each other. At this time, the photomask stage M S T is only used to match the positions of the photomask M and the photosensitive substrate P.

11246pif.ptd 第50頁 200307182 五、發明說明（46) 微動，可基本不移動。然後，藉由一面使光罩Μ和感光基板Ρ對投影光學系統P L在一 X方向上同步移動，一面以曝光光E L照明光罩Μ，對圖案形成區域P A 5進行曝光處理。圖1 3B所示為對圖案形成區域PA 5之掃描曝光結束後的狀態。接著，控制裝置C〇N T基於修正參數修正像特性後，一面藉由4雷射干涉儀P y 2及Ρ X 1 、Ρ X 2檢測基板載物台P S T的位置，一面進行對圖案形成區域P A6的曝光處理（步驟SB15)。即，如圖1 3C所示，控制裝置CONT在一Y方向步進移動基板載物台P S T以使投影光學系統P L和圖案形成區域P A 6的+ X側末端對向。此時，光罩載物台MS T為了使光罩Μ和感光基板P的位置吻合也只進行微動，可基本不移動。然後，藉由一面使光罩Μ和感光基板Ρ對投影光學系統P L在+ X方向上同步移動，一面以曝光光E L照明光罩Μ，對圖案形成區域P A 6 進行曝光處理。圖1 3D所示為對圖案形成區域PA6之掃描曝光結束後的狀態。上述步驟SB9〜SB 1 5之基板載物台PST在 X軸方向的位置檢測藉由鐳射干涉儀Ρ X 1 、Ρ X 2進行，在Y軸方向的位置檢測藉由鐳射干涉儀P y 1進行。即，在X軸方向多個並列之I雷射干涉儀P y 1〜P y 3中用於位置檢測的鐳射干涉儀為1個P y 2 。然後，藉由該1個鐳射干涉儀P y 2進行位置檢測，並基11246pif.ptd Page 50 200307182 V. Description of the invention (46) Micro-movement, can basically not move. Then, the mask M and the photosensitive substrate P are moved in synchronization with the projection optical system PL in the X direction while the mask M is illuminated with the exposure light EL to expose the pattern formation area PA5. Fig. 1B shows the state after the scanning exposure of the pattern forming area PA 5 is completed. Next, the control unit CONT corrects the image characteristics based on the correction parameters, and detects the position of the substrate stage PST with the 4 laser interferometers P y 2 and P X 1 and P X 2, and performs the pattern forming area P A6 exposure processing (step SB15). That is, as shown in FIG. 1C, the control device CONT moves the substrate stage P S T stepwise in a Y direction so that the projection optical system PL and the + X side end of the pattern forming area PA 6 face each other. At this time, in order to match the positions of the photomask M and the photosensitive substrate P, the photomask stage MS T may be moved only slightly, and may not be moved substantially. Then, the mask M and the photosensitive substrate P are moved synchronously in the + X direction to the projection optical system P L while the mask M is illuminated with the exposure light EL to expose the pattern formation area P A 6. Fig. 1 3D shows a state after the scanning exposure of the pattern forming area PA6 is completed. The position detection of the substrate stage PST in the X-axis direction in the above steps SB9 to SB 1 5 is performed by the laser interferometers P X 1 and P X 2, and the position detection in the Y-axis direction is performed by the laser interferometer P y 1 . That is, one laser interferometer for position detection among a plurality of parallel I laser interferometers P y 1 to P y 3 in the X-axis direction is one P y 2. Then, position detection is performed by the one laser interferometer P y 2, and

11246pif.ptd 第51頁11246pif.ptd Page 51

200307182 五、發明說明（47) 於該鐳射干涉儀P y 2的位置檢測值進行調正標誌檢測且進行光罩Μ和感光基板P的調正處理後，光罩Μ的圖案被曝光于圖案形成區域ΡΑ4〜ΡΑ6 。而且，這裏也是在Υ軸方向多個並列之圖案形成區域ΡΑ4〜ΡΑ 6的每一個被依次連續曝光，同時在該連續曝光中，多個鐳射干涉儀P y 1〜P y 3中與圖案形成區域ΡΑ4 〜P A 6 (分區B R 2 )對應之特定的鐳射干涉儀P y 2形成可被用於位置檢測之構成。然後，控制裝置C〇N T將使用的鐳射干涉儀從P y2切換為Py3 (步驟SB16)。接著，如圖1 4A所示，控制裝置C〇NT —面移動基板載物台P S T ’ 一面使設於感光基板P之從一 X側開始第5列的調正標誌m 1〜m 6的每一個與調正系統 L 1〜A L 6的每一個對向。然後，控制裝置C〇N T選擇多個鐳射干涉儀Py 1〜Py 3中與圖案形成區域P A 7〜P A 9 (分區B R 3 )對應之1個鐳射干涉儀P y 3 。控制裝置CONT伴隨基板載物台P ST在 X軸方向之位置的移動，將用於基板載物台P S T在Y 軸方向的位置檢測之鐳射干涉儀，從鐳射干涉儀P y 2 切換為該選擇的鐳射干涉儀P y 3 (步驟S B 1 6 )。然後，控制裝置C〇N T利用鐳射干涉儀P X 1 、 P X 2檢測此時的基板載物台P S 丁在X軸方向及0 Z 方向的位置，同時利用鐳射干涉儀P y 3檢測基板載物台P ST在Y軸方向的位置。控制裝置CONT —面藉200307182 V. Description of the invention (47) After the position detection value of the laser interferometer P y 2 is used to perform the correction mark detection and the photomask M and the photosensitive substrate P are adjusted, the pattern of the photomask M is exposed to the pattern formation Areas PA4 to PA6. In addition, here, each of a plurality of parallel pattern formation areas PA4 to PA6 is sequentially and sequentially exposed in the z-axis direction, and in this continuous exposure, a plurality of laser interferometers P y 1 to P y 3 are patterned. The specific laser interferometer P y 2 corresponding to the areas PA4 to PA 6 (area BR 2) is configured to be used for position detection. Then, the controller COONT switches the laser interferometer used from P y2 to Py3 (step SB16). Next, as shown in FIG. 14A, the control device COON—moves the substrate stage PST ′, and adjusts each of the adjustment marks m 1 to m 6 provided on the photosensitive substrate P in the fifth column from the X side. One is opposed to each of the adjustment systems L 1 to AL 6. Then, the control unit CNT selects one of the plurality of laser interferometers Py 1 to Py 3 corresponding to the pattern forming area P A 7 to P A 9 (area B R 3). The control device CONT switches the laser interferometer for detecting the position of the substrate stage PST in the Y-axis direction along with the movement of the substrate stage P ST in the X-axis direction, and switches from the laser interferometer P y 2 to this selection. Laser interferometer P y 3 (step SB 1 6). Then, the control unit CONT uses the laser interferometers PX 1 and PX 2 to detect the position of the substrate stage PS D in the X-axis direction and the 0 Z direction, and simultaneously detects the substrate stage using the laser interferometer P y 3. Position of P ST in the Y-axis direction. Control device CONT — borrow

11246pif.ptd 第52頁 200307182 五、發明說明（48) 由鐳射干涉儀檢測基板載物台P S T的位置，一面以使調正系統A L 1〜A L 6和從一X側開始第5列的調正標諸m 1〜m 6的每一個對向之狀態，同時檢測與在Y 軸方向多個並列之圖案形成區域（曝光區域）P A 7〜 P A 9的每一個對應之調正標誌m 1〜m 6 (步驟S B 17)。此時，使鐳射干涉儀P y 3動作，將鐳射干涉儀P y 2和P y 3的差分作為偏移2記憶。以後，基板載物台P S T座標可藉由鐳射干涉儀P y 3的計測值、偏移 1 、偏移2而求得。這裏，在將錯射干涉儀從P y 2切換為P y 3時，鐳射干涉儀P y 2的位置檢測結果也被用於鐳射干涉儀 P y 3的位置檢測。即，在關於分區B R 3 (圖案形成區‘域P A 7〜P A 9 )之調正處理的一部分即鐳射干涉儀P y 3的位置檢測動作中，用到了在X軸方向鄰接之分區BR2 (圖案形成區域PA4〜PA6)的調正結果的一部分即鐳射干涉儀P y 2的位置檢測結果。接著如圖1 4B所示，控制裝置C〇NT在一X方向移動基板載物台P ST ’並使設於感光基板P之從一X 側開始第6列的調正標誌m 1〜m 6的每一個與調正系統A L 1〜A L 6的每一個對向，在藉由鐳射干涉儀P y 3檢測基板載物台P S T在Y軸方向之位置的同時，藉由鐳射干涉儀P X 1 、P X 2檢測基板載物台P S T 在X軸方向及<9 Z方向之位置，並同時檢測這些調正標11246pif.ptd Page 52, 200307182 V. Description of the invention (48) The position of the substrate stage PST is detected by a laser interferometer, so that the adjustment system AL 1 ~ AL 6 and the 5th column from the X side are adjusted. Mark each of the m 1 to m 6 facing states, and simultaneously detect alignment marks m 1 to m corresponding to each of a plurality of parallel pattern formation areas (exposure areas) PA 7 to PA 9 in the Y-axis direction. 6 (step SB 17). At this time, the laser interferometer P y 3 is operated, and the difference between the laser interferometer P y 2 and P y 3 is stored as the offset 2. Thereafter, the coordinates of the substrate stage P S T can be obtained from the measured values of the laser interferometer P y 3, the offset 1, and the offset 2. Here, when the misinterferometer is switched from P y 2 to P y 3, the position detection result of the laser interferometer P y 2 is also used for the position detection of the laser interferometer P y 3. That is, in the position detection operation of the laser interferometer P y 3, which is a part of the adjustment processing of the partition BR 3 (pattern formation region PA 7 to PA 9), the partition BR 2 (pattern adjacent to the X-axis direction) is used. A part of the adjustment result of the formation areas PA4 to PA6) is the position detection result of the laser interferometer P y 2. Next, as shown in FIG. 14B, the control device CONT moves the substrate stage P ST ′ in the X direction and sets the adjustment marks m 1 to m 6 in the sixth column from the X side on the photosensitive substrate P. Each of them is opposed to each of the adjustment systems AL 1 to AL 6, and the position of the substrate stage PST in the Y-axis direction is detected by the laser interferometer P y 3, and the laser interferometer PX 1, PX 2 detects the position of the substrate stage PST in the X-axis direction and the < 9 Z-direction, and simultaneously detects these calibration standards

11246pi f.ptd 第53頁 200307182 五、發明說明（49) 言志ml〜m6的每一個（步驟SB 18)。控制裝置CONT對圖案形成區域PA7〜PA9 的每一個，在X軸方向上間隔所定距離的2處位置，進行第5列的調正標誌及第6列的調正標誌的位置檢測，基於這些檢測結果，求修正關於各圖案形成區域P A 7 〜P A 9之移位、定標及旋轉等像特性的修正參數（步驟 S B 1 9 )。這裏，在第5列的調正標誌檢測後，為了檢測第6 列的調正標誌，在感光基板P對調正單元U進行掃描時，在Y軸方向並列之多個基板A F檢測系統6 0 a〜 6 0 g的每一個，在X軸方向上以所定距離間隔檢測感光基板P之表面的高度位置。這些基板A F檢測系統6 0 a〜6 0 g的各個檢測結果被輸出到控制裝置C〇N Τ‘，控制裝置C〇N T基於基板檢測系統6 0 a〜6 0 g的檢測結果，求感光基板P的圖案形成區域P A 7〜 PA9各個的表面形狀（步驟SB20)。接著，控制裝置C〇NT基於藉由步驟S B 1 8求得的修正參數修正像特性後，一面藉由鐳射干涉儀P y 3及P X 1 、P X 2檢測基板載物台P S T的位置，一面進行對圖案形成區域PA7的曝光處理（步驟SB 2 1 ) ° 即，如圖1 4 C所示，控制裝置C〇N T移動基板載物台P S T以使投影光學系統P L和圖案形成區域P A 7的+ X側末端對向。然後，藉由一面使光罩Μ和感光11246pi f.ptd Page 53 200307182 V. Description of the invention (49) Each of the words ml ~ m6 (step SB 18). The control device CONT detects the position of the alignment mark in the fifth column and the alignment mark in the sixth column for each of the pattern forming areas PA7 to PA9 at two positions spaced apart by a predetermined distance in the X-axis direction. Based on these detections As a result, correction parameters for correcting image characteristics such as shift, scaling, and rotation of each of the pattern forming regions PA 7 to PA 9 are obtained (step SB 1 9). Here, in order to detect the correction mark in the sixth column after the detection of the correction mark in the sixth column, when the correction unit U is scanned by the photosensitive substrate P, a plurality of substrate AF detection systems juxtaposed in the Y-axis direction 60 a For each of ~ 60 g, the height position of the surface of the photosensitive substrate P is detected at predetermined distance intervals in the X-axis direction. The respective detection results of the substrate AF detection systems 60 a to 60 g are output to the control device CONT ′, and the control device CONT determines the photosensitive substrate based on the detection results of the substrate detection system 60 a to 60 g. The surface shape of each of the pattern forming areas PA 7 to PA 9 of P (step SB20). Next, the control unit CONT corrects the image characteristics based on the correction parameters obtained in step SB 1 8 and performs the detection of the position of the substrate stage PST with the laser interferometers P y 3 and PX 1 and PX 2. Exposure processing to the pattern forming area PA7 (step SB 2 1) ° That is, as shown in FIG. 14C, the control device CONT moves the substrate stage PST so that the projection optical system PL and the pattern forming area PA 7+ The X-side ends are opposite. Then, the photomask M and the photoreceptor are exposed by one side.

11246pif.ptd 第54頁 200307182 五、發明說明（50) 基板P對投影光學系統P L在+X方向同步移動一面以曝光光E L照明光罩Μ，對圖案形成區域P A 7進行曝光處理。圖1 4 D所示為對圖案形成區域P A 7之掃描曝光結束後的狀態。這裏，基於藉由步驟S B 1 9求得之感光基板P (圖案形成區域P A 7 )的表面形狀資料，為了使投影光學系統的成像面和感光基板P的表面一致，一面使基板載物台PST在Z軸方向或、0Y 方向上移動而控制感光基板P的姿式，一面進行掃描曝光。接著，控制裝置C〇N T基於修正參數修正像特性後，一面藉由错射干涉儀P y 3及P X 1 、P X 2檢測基板載物台P S T的位置，一面進行對圖案形成區域P A8的曝光處理（步驟SB22)。 ‘ gp ，如圖1 5A所示，控制裝置CONT在一 Y方向步進移動基板載物台P S T以使投影光學系統P L和圖案形成區域P A 8的一X側末端對向。此時，光罩載物台M S 丁為了使光罩Μ和感光基板P的位置吻合只進行微動，可基本不移動。然後，藉由一面使光罩Μ和感光基板Ρ對投影光學系統P L在一X方向上同步移動，一面以曝光光E L照明光罩Μ，對圖案形成區域P A 8進行曝光處理。圖1 5B所示為對圖案形成區域PA8之掃描曝光結束後的狀態。接著，控制裝置C〇N T基於修正參數修正像特性後，一面藉由鐳射干涉儀P y 3及Ρ X 1 、Ρ X 2檢測11246pif.ptd Page 54 200307182 V. Description of the invention (50) The substrate P moves the projection optical system P L synchronously in the + X direction to expose the light E L to illuminate the mask M, and the pattern forming area P A 7 is exposed. Fig. 14D shows a state after the scanning exposure to the pattern forming area P A 7 is completed. Here, based on the surface shape data of the photosensitive substrate P (pattern forming area PA 7) obtained in step SB 19, in order to make the imaging surface of the projection optical system and the surface of the photosensitive substrate P coincide, the substrate stage PST is made Scanning exposure is performed while moving in the Z-axis direction or the 0Y direction to control the posture of the photosensitive substrate P. Next, the control unit CONT corrects the image characteristics based on the correction parameters, and while the position of the substrate stage PST is detected by the misfire interferometers P y 3 and PX 1 and PX 2, the pattern formation area P A8 is exposed. Processing (step SB22). ‘Gp, as shown in FIG. 15A, the control device CONT moves the substrate stage P S T in a Y-direction stepwise so that the projection optical system PL and an X-side end of the pattern forming area PA 8 are opposed to each other. At this time, the photomask stage MS can only move slightly in order to match the positions of the photomask M and the photosensitive substrate P, and can be basically not moved. Then, the mask M and the photosensitive substrate P are moved synchronously in the X direction with respect to the projection optical system PL while the mask M is illuminated with the exposure light EL to expose the pattern formation area PA8. 15B shows a state after the scanning exposure of the pattern forming area PA8 is completed. Next, the control device COONT corrects the image characteristics based on the correction parameters, and detects them with a laser interferometer P y 3 and P X 1 and P X 2

11246pif.ptd 第55頁 200307182 五、發明說明（51) 基板載物台P ST的位置，一面進行對圖案形成區域P A9的曝光處理（步驟SB23)。即，如圖1 5C所示，控制裝置C〇NT在一 Y方向步進移動基板載物台P S T以使投影光學系統P L和圖案形成區域P A 9的+ X側末端對向。此時’光罩載物台MS T為了使光罩Μ和感光基板P的位置吻合也只進行微動，可基本不移動。然後，藉由一面使光罩Μ和感光基板Ρ對投影光學系統P L在+ X方向上同步移動，一面以曝光光E L照明光罩Μ，對圖案形成區域P A 9 進行曝光處理。圖1 5D所示為對圖案形成區域PA9之掃描曝光結束後的狀態。上述步驟SB 1 7〜SB2 3之基板載物台P ST 在X軸方向的位置檢測，即對多個圖案形成區域P A 7 〜PA9 (分區BR3)之調正處理及曝光處理中X軸方向的位置檢測，如圖1 4A、B、C、D及圖1 5A、B、 C、D所示，藉由鐳射干涉儀Pxl、Px2進行，在Y 軸方向的位置檢測藉由鐳射干涉儀P y 3進行。即，在 X軸方向多個並列之鐳射干涉儀Py 1〜Py3中用於位置檢測的鐳射干涉儀為1個P y 3 。然後，藉由該1 個鐳射干涉儀P y 3進行位置檢測，並基於該鐳射干涉儀P y 3的位置檢測值進行調正標誌檢測且進行光罩Μ 和感光基板Ρ的調正處理後，光罩Μ的圖案被曝光于圖案形成區域ΡΑ7〜ΡΑ9 。而且，這裏也是在Υ軸方向多個並列之圖案形成區域ΡΑ7〜ΡΑ9的每一個被11246pif.ptd Page 55 200307182 V. Description of the invention (51) The position of the substrate stage P ST is exposed to the pattern forming area P A9 (step SB23). That is, as shown in FIG. 15C, the control device CONT moves the substrate stage P S T in a Y direction so that the projection optical system PL and the + X side end of the pattern forming area PA 9 face each other. At this time, the photomask stage MS T is moved only slightly in order to match the positions of the photomask M and the photosensitive substrate P, and may not be moved substantially. Then, the mask M and the photosensitive substrate P are moved synchronously in the + X direction to the projection optical system PL while the mask M is illuminated with the exposure light EL to expose the pattern formation area P A 9. Fig. 15D shows a state after the scanning exposure of the pattern forming area PA9 is completed. In the above steps SB 1 7 to SB2 3, the position of the substrate stage P ST in the X-axis direction is detected, that is, the X-axis direction in the alignment processing and exposure processing of the plurality of pattern forming regions PA 7 to PA9 (zone BR3). Position detection, as shown in Figures 14A, B, C, and D, and Figures 5A, B, C, and D, are performed by laser interferometers Pxl and Px2. Position detection in the Y-axis direction is performed by laser interferometer P y 3 proceed. That is, one laser interferometer for position detection among a plurality of parallel laser interferometers Py 1 to Py3 in the X-axis direction is one P y 3. Then, the position detection is performed by the one laser interferometer P y 3, and the correction mark detection is performed based on the position detection value of the laser interferometer P y 3, and the photomask M and the photosensitive substrate P are adjusted. The pattern of the photomask M is exposed to the pattern forming areas PA7 to PA9. In addition, here, each of a plurality of parallel pattern forming regions PA7 to PA9 in the direction of the Z axis is also

11246pif.ptd 第56頁 200307182 五、發明說明（52) 依次連續曝光，同時在該連續曝光中，多個鐳射干涉儀 Pyl〜Py3中與圖案形成區域PA7〜PA9 (分區B R 3 )對應之特定的鐳射干涉儀P y 3形成可被用於位置檢測之構成。如以上說明，在對光罩Μ和感光基板P的掃描方向即Υ軸方向之交叉的非掃描方向即X軸方向上，並列配置有6個調正系統A L ，所以可不減少應檢測之調正標言忘m 1〜m 6的數目，與原來相比就能降低調正標誌、m 1〜m 6的檢測動作次數。因此，可一面維持調正精度一面縮短調正處理時間。另外，在本實施例中，調正系統為A L 1〜A L 6 共6個，但是也可在Y軸方向上至少並列配置3個，藉此減少調正標誌的數目，可降低調正標誌的檢測動作次數‘。而且，使用這些多個並列之調正系統，可同時計測多個圖案形成區域各個的調正標誌，所以能夠提高生產能力。本實施例中的調正系統A L為偏離中心線方向的調正系統。因此，與通過投影光學系統P L同時計測光罩調正標誌和基板調正標誌之T T L方向的調正系統相比，為一種不直接檢測光罩調正標誌的構成，所以可將調正系統A L 1〜A L 6中外側2個調正系統A L 1 、 AL 6的間隔設定得大於光罩Μ的寬度（在Y軸方向的長度）。因此，調正系統AL1〜AL6的配置可與光罩Μ的寬度無關而自由設定。11246pif.ptd Page 56 200307182 V. Description of the invention (52) In this continuous exposure, at the same time, among the multiple laser interferometers Pyl ~ Py3, the specific ones corresponding to the pattern forming areas PA7 ~ PA9 (zone BR 3) The laser interferometer P y 3 forms a structure that can be used for position detection. As described above, the six alignment systems AL are arranged side by side in the non-scanning direction, that is, the X-axis direction, where the scanning direction of the photomask M and the photosensitive substrate P is the non-scanning direction. The number of m1 to m6 in the banner can reduce the number of detection operations of the correction flag and m1 to m6 compared with the original. Therefore, it is possible to shorten the adjustment processing time while maintaining the adjustment accuracy. In addition, in this embodiment, there are a total of six correction systems, AL 1 to AL 6, but it is also possible to arrange at least three in parallel in the Y-axis direction, thereby reducing the number of adjustment marks and reducing the number of adjustment marks. Detect the number of actions'. In addition, by using these multiple parallel adjustment systems, it is possible to measure the adjustment marks of each of the plurality of pattern formation areas at the same time, so that the productivity can be improved. The adjustment system A L in this embodiment is an adjustment system that is off-center. Therefore, compared with a TTL-direction adjustment system that simultaneously measures the mask alignment mark and the substrate alignment mark by the projection optical system PL, the configuration does not directly detect the mask alignment mark. Therefore, the alignment system AL can be adjusted. The interval between the two outer adjustment systems AL 1 and AL 6 in 1 to AL 6 is set to be larger than the width (length in the Y-axis direction) of the mask M. Therefore, the arrangement of the adjustment systems AL1 to AL6 can be freely set regardless of the width of the mask M.

11246pi f.ptd 第57頁 200307182 五、發明說明（53) 調正光罩的檢測為對1個圖案形成區域，在X軸方向上隔有所定距離的2處位置進行之構成，所以基於這些光罩檢測結果，可精度良好地進行調正處理。另外，調正標誌檢測既可以在X軸方向上隔有所定距離的至少 2處位置進行，也可在3處以上的任意的多個位置進行。藉由多設置調正光罩檢測的檢測位置，可提高檢測精度。當掃描曝光在Y軸方向鄰接之圖案形成區域的每一個時，藉由利用彼此逆方向的同步移動而進行掃描曝光處理，可在對第1圖案形成區域的曝光處理結束後，進行對第2圖案形成區域的曝光處理時也無需大幅移動光罩（光罩載物台），所以能夠降低該光罩的移動時間，從而提高生產能力。 k 另外，本實施例與調正同步進行P y 1 P y 2、 P y 2 — P y 3的干涉儀切換，但是只要是2個干涉儀可動作的位置在哪里都可以，也可為曝光中途和曝光結束點。這樣一來，即使是無需調正的第1層的曝光，也能成為排列精度佳的曝光。偏移的計測可藉由反復進行多次計測並平均化以提高精度。另外，平均化在進行0 · 1〜0 · 2 S e C以上時效果大。然而，如上所述，對1個圖案形成區域，調正標誌設於例如4角為較佳。藉由對1個圖案形成區域設置4 個調正標誌，可精度良好地求位移、定標、旋轉及正交11246pi f.ptd Page 57 200307182 V. Description of the invention (53) The detection of the correction mask is based on the formation of two patterns at a certain distance in the X-axis direction. Detection results can be accurately adjusted. In addition, the correction mark detection may be performed at at least two positions at a predetermined distance in the X-axis direction, or may be performed at an arbitrary plurality of positions at three or more positions. By setting multiple detection positions for the correction mask detection, the detection accuracy can be improved. When scanning and exposing each of the pattern formation areas adjacent to each other in the Y-axis direction, the scan exposure processing is performed by using synchronous movements in opposite directions to each other. After the exposure processing for the first pattern formation area is completed, the second There is also no need to move the mask (mask stage) significantly during the exposure process of the pattern formation area, so the moving time of the mask can be reduced, thereby increasing the productivity. k In addition, in this embodiment, interferometer switching of P y 1 P y 2, P y 2 — P y 3 is performed in synchronization with the adjustment, but as long as the two interferometers can be operated in any position, exposure can also be performed. Halfway and end of exposure. In this way, even the exposure of the first layer that does not need to be adjusted can be an exposure with good alignment accuracy. The offset measurement can be performed repeatedly and averaged to improve accuracy. In addition, averaging has a large effect when it is equal to or greater than 0 · 1 to 0 · 2 S e C. However, as described above, for one pattern formation area, it is preferable to set the correction mark at, for example, four corners. By setting 4 alignment marks on a pattern formation area, displacement, calibration, rotation and orthogonality can be calculated with high accuracy.

11246pif.ptd 第58頁 200307182 五夠能了為且而〇 ίι 處正同行進地度精高 54)性 V 說像 I等度個軸 2 Y 的在列統並系向正方調軸， Y個在一中每諸的標域正區調成之形角案 4圖於對設，測諸計標時正同調 P被板件基元光造感製在據為根因目，數而及然小。大佳的較域為區個成 2形置案配圖少的至定上設向所方上圖以正個由調 1藉使在，而生是數產但參會。為，況} 置情度配之長的統的統系向系正方正調軸調個Y 由2 C 藉置度以配寬所不的，域P 化區板變成基當形光適案感變目數。及統小系大正的調域個區2 成置形配案域圖區使成即形，案化圖佳個最1 隔對間能的也統，系化個足 6滿共以 6置 L配 A的 ~ 6 1 L L A A ~ 為1 L L A A 統統系系正正周周當定，設如由例藉時 VII 隔間的 2 L A 和 IX L A 統系正同 X X)/ 7\ 211246pif.ptd Page 58 200307182 Five is enough, and the position is straight forward and the degree is high. 54) Sex V says that I like the same degree of axis 2 Y and the system is aligned and aligned to the square, Y The figure 4 of the positive and negative angles adjusted in the positive area of each target field is opposite. When measuring the target values, the P is adjusted by the light element of the plate element. . The better domains are in the form of two districts, and the plans are few. The top plan is set to the top. The top plan is adjusted by one. If it is a digital product, it is in attendance. For the situation} The system of long-term sentiment is adjusted to the square of the system. Y is borrowed by 2 C to match the width. The P-zone of the domain becomes a basic shape. Head count. And the small area of Dazheng's tune area 2 is formed into a configuration area map area, which is shaped, and the plan map is the best for every other pair of energy. A ~ 6 1 LLAA ~ is 1 LLAA system is determined week by week, suppose the 2 LA and IX LA systems in the VII compartment are the same as XX) / 7 \ 2

L a a 3)5 L 2 L A ( A 統.統系.系正·正同周.L .L a a 3) 5 L 2 L A

VII 隔間的 4 L A4 L A in VII compartment

X 5\ IXX 5 \ IX

X Nlly 7\ 2 <| 隔間的 6 L A L VII 隔間的 6 L A 和 )^—_ 3 L (A •統 •系 •正同 L · 也化變目數。及統小系大正的調域個區2 成置形配案域圖區使成即形，案件圖條個 } 之1 4 對 ( 能此於關況情 2 A 8 11 8 。 1—I 明圖說照行參進面面圖及X Nlly 7 \ 2 < | 6 LAL in the compartment VII 6 LA in the compartment) ^ __ 3 L (A • Tong • Department • Zheng Tong L • Also changes the number of meshes. And Tong Xiao Department Taisho Tune Fields and areas 2 are placed in the shape of the case, and the field map area is ready to form, and the case map is 1 of 4 pairs (can be based on the situation 2 A 8 11 8). and

11246pif.ptd 第59頁 200307182 五、發明說明（55) 圖1 8 A 1所示為將Y軸方向的寬L的感光基板P沿 Y軸方向一分為二，沿X軸方向一分為二，設定共計4 個圖案形成區域，並在這4個圖案形成區域的每一個上形成畫面（圖案）之場合。這裏，圖1 8A2所示的光罩 Μ被用於曝光處理。光罩Μ上形成有π No · 1Π圖案。圖1 8 A 1中，白圈π〇π表示被使用的調正系統，該例中對圖案形成區域p A 2使用調正系統A L 1 、A L 3 ，對圖案形成區域P A 1使用調正系統A L 4 、A L 6 。這裏，在感光基板P上形成有與調正系統AL 1〜AL 6對應之調正標誌。調正系統A L 1〜A L 6以滿足上述（1 )〜（4 )式為目的進行配置，所以對1個圖案形成區域至少配置有2個，圖1 8 A1的例為3個調正系統。這裏，各圖案形成區域在Y轴方向的寬度相同。 k 圖1 8 B1所示為將寬L的感光基板P沿Y軸方向一分為三，沿X軸方向一分為二，設定共計6個圖案形成區域，並在這6個圖案形成區域的每一個上形成畫面 (圖案）之場合。這裏，圖1 8B2所示的光罩Μ被用於曝光處理。光罩Μ上形成有”Νο · 1”圖案。圖18Β111246pif.ptd Page 59 200307182 V. Description of the invention (55) Figure 1 8 A 1 shows the photosensitive substrate P with a width L in the Y-axis direction divided into two along the Y-axis direction and divided into two along the X-axis direction When setting a total of 4 pattern formation areas and forming a screen (pattern) on each of the 4 pattern formation areas. Here, a photomask M shown in FIG. 18A2 is used for the exposure processing. The photomask M is formed with a π No · 1Π pattern. In Fig. 18 A1, the white circle π〇π indicates the adjustment system used. In this example, the adjustment systems AL 1 and AL 3 are used for the pattern forming area p A 2, and the adjustment system is used for the pattern forming area PA 1. AL 4 and AL 6. Here, alignment marks corresponding to the alignment systems AL 1 to AL 6 are formed on the photosensitive substrate P. The adjustment systems A L 1 to A L 6 are arranged for the purpose of satisfying the expressions (1) to (4) above. Therefore, at least two pattern formation areas are arranged. The example of A1 in FIG. 18 is three adjustment systems. Here, the widths of the pattern forming regions in the Y-axis direction are the same. k Fig. 1 8 B1 shows the width L of the photosensitive substrate P is divided into three along the Y-axis direction, and divided into two along the X-axis direction. A total of six pattern formation regions are set, When a screen (pattern) is formed on each one. Here, the photomask M shown in Fig. 18B2 is used for the exposure processing. The photomask M is formed with a "No. 1" pattern. Figure 18B1

所示例中，對圖案形成區域P A 3使用調正系統A L 1 、A L 2 ，對圖案形成區域P A 2使用調正系統A LIn the illustrated example, the adjustment systems A L 1 and A L 2 are used for the pattern forming area P A 3 and the adjustment system A L is used for the pattern forming area P A 2

3 、A L 4 ，對圖案形成區域P A 1使用調正系統A L 5 、A L 6 。在這種情況下，調正系統A L 1〜A L 6 也以滿足上述（1 )〜（4 )式為目的進行配置，所以對1個圖案形成區域配置2個調正系統。這裏，各圖案3. A L 4, and use the adjustment systems A L 5 and A L 6 for the pattern forming area P A 1. In this case, the adjustment systems A L 1 to A L 6 are also arranged to satisfy the above-mentioned expressions (1) to (4), so two adjustment systems are arranged for one pattern forming area. Here, each pattern

11246pif.ptd 第60頁 200307182 五、發明說明（56) 形成區域在Y軸方向的寬度相同。圖1 8 C 1所示為將寬L的感光基板P沿Y軸方向一分為三，沿X軸方向一分為二，設定共計6個圖案形成區域之場合。這裏，圖1 8C2所示的光罩Μ被用於曝光處理。光罩Μ上形成有π Ν ο · 1 π圖案和π Ν 〇 · 2 π圖案。然後，對圖案形成區域P A 1〜P A 6的每一個將π Ν ο · 1 ”圖案和π Ν ο · 2 π圖案的各個適當轉印，並在 Υ軸方向上5個，在X軸方向上2個，形成共計1 0個畫面（圖案）。在圖1 8 C1所示的例中，對圖案形成區域P A 3 ，π Ν ο · 1 π圖案和π Ν 〇 · 2 π圖案被同時形成，此時使用調正系統A L 1 、A L 2 。然後對圖案形成區域P A 2形成π Ν ο · 1 ”圖案，此時使用調正系統 AL3 、AL4 。另外，在圖案形成區域ΡΑ2上形成π β ο · 1 ’’圖案時，藉由設於照明光學系統I L之遮簾 (照明區域設定裝置）等，對’’ Ν 〇 · 2 π圖案之曝光光的照明被遮斷，在圖案形成區域P A 3上只形成光罩Μ 的’· Ν ο · 1 η圖案。這裏，調正系統A L 3和A L 4的間隔如上述（2 )式被設定，所以可使這2個調正系統 A L 3 、A L 4對圖案形成區域P A 2配置。然後，對圖案形成區域P A 1 ，" Ν ο · 1 ”圖案和” Ν 〇 · 2 ”圖案被同時形成，此時使用調正系統A L 5 、A L 6 。在這種情況下，調正系統A L 1〜A L 6也以滿足上述 (1 )〜（4 )式為目的進行配置，所以對1個圖案形成區域配置2個調正系統。11246pif.ptd Page 60 200307182 V. Description of the invention (56) The width of the formation area in the Y-axis direction is the same. Fig. 18C1 shows a case where a wide L photosensitive substrate P is divided into three along the Y-axis direction and divided into two along the X-axis direction, and a total of six pattern formation regions are set. Here, the photomask M shown in Fig. 18C2 is used for the exposure process. The photomask M is formed with a π Ν · · 1 π pattern and a π Ν · · 2 π pattern. Then, each of the pattern forming areas PA 1 to PA 6 is appropriately transferred to each of the π Ν ο · 1 ″ pattern and the π Ν ο · 2 π pattern, and five in the Υ-axis direction and in the X-axis direction 2 to form a total of 10 screens (patterns). In the example shown in FIG. 1 C1, for the pattern formation area PA 3, a π Ν · · 1 π pattern and a π Ν 〇 2 π pattern are formed simultaneously, At this time, the correction systems AL 1 and AL 2 are used. Then, a pattern of π Ν ο · 1 ″ is formed in the pattern forming area PA 2. At this time, the correction systems AL 3 and AL 4 are used. In addition, when a pattern of π β ο · 1 '' is formed on the pattern formation area PA2, the exposure light of the pattern "N 〇 · 2 π" is exposed by a curtain (lighting area setting device) or the like provided in the illumination optical system IL. The illumination is blocked, and only the '· Ν · · 1 η pattern of the photomask M is formed on the pattern forming area PA 3. Here, the interval between the adjustment systems A L 3 and A L 4 is set as described in the above formula (2), so that the two adjustment systems A L 3 and A L 4 can be arranged to the pattern forming area P A 2. Then, for the pattern forming area PA 1, the “N ο · 1” pattern and the “Ν 〇 2” pattern are formed at the same time, and the adjustment systems AL 5 and AL 6 are used at this time. In this case, the adjustment system AL 1 to AL 6 are also arranged for the purpose of satisfying the above-mentioned expressions (1) to (4). Therefore, two adjustment systems are arranged in one pattern forming area.

11246pif.ptd 第61頁 200307182 五、發明說明（57) 圖1 8 D 1所示為將寬L的感光基板P沿Y軸方向一分為三，沿X軸方向一分為二，設定共計6個圖案形成區域之場合。這裏，圖1 8D2所示的光罩Μ被用於曝光處理。光罩Μ上形成有"Ν ο · 1 π圖案、"Ν 〇 · 2 ’’圖案、’’ Ν 〇 · 3 ’’圖案。然後，對圖案形成區域P A 1〜 P A 6的每一個將π Ν ο · 1 π圖案、π N 〇 · 2 π圖案、π11246pif.ptd Page 61 200307182 V. Description of the invention (57) Figure 1 8 D 1 shows the width L of the photosensitive substrate P is divided into three along the Y axis direction, and divided into two along the X axis direction. Occasions where a pattern is formed. Here, the photomask M shown in Fig. 18D2 is used for the exposure process. The photomask M is formed with a " N ο · 1 π pattern, a " N 〇 · 2 'pattern, and a' 'Ν 〇 · 3' pattern. Then, for each of the pattern forming regions P A 1 to P A 6, a π Ν ο · 1 π pattern, a π N 〇 · 2 π pattern, and a π

No · 3Π圖案的各個適當轉印，並在Υ軸方向上7個，在X軸方向上2個，形成共計14個晝面（圖案）。在圖1 8 D1所示的例中，對圖案形成區域P A 3 ，π Ν 〇 · 2 ”圖案和’’ Ν ο · 3 ”圖案被同時形成，此時使用調正系Each of the No. 3Π patterns was appropriately transferred, and seven in the z-axis direction and two in the x-axis direction formed a total of 14 daylight surfaces (patterns). In the example shown in FIG. 18 D1, for the pattern forming area P A 3, a π Ν 〇 · 2 ″ pattern and a ‘’ Ν ο · 3 ”pattern are formed at the same time. In this case, a correction system is used.

統AL1 、AL2 。另外，在圖案形成區域ΡΑ3上形成” Ν 〇 · 2 ’’ 、π Ν 〇 · 3 ”圖案時，藉由遮簾等對’’ N ο · 1 π圖案之曝光光的照明被遮斷，在圖案形成區域Ρ Α‘ 3上只形成光罩Μ的’1 Ν 〇 · 2 π 、π Ν 〇 · 3 ’’圖案。然後，對圖案形成區域P A 2 ，" Ν ο · 1 ’’圖案、π Ν 〇 · 2 ”圖案、π Ν 〇 · 3 π圖案被同時形成，此時使用調正系統A L 3 、A L 4 。然後，對圖案形成區域P A 1 ，’’ Ν ο · 1 π圖案和π Ν 〇 · 2 π圖案被同時形成，此時使用調正系統A L 5 、A L 6 。另外，在圖案形成區域P A 1上形成π Ν ο · 1 π 、π Ν 〇 · 2 π圖案時，藉由遮簾等對π Ν ο · 3 π圖案之曝光光的照明被遮斷。在這種情況下，調正系統A L 1〜A L 6也以滿足上述（1 )〜（4 )式為目的進行配置，所以對1個圖案形成區域配置2個調正系統。System AL1, AL2. In addition, when a pattern of "N 〇 · 2" and π Ν〇 · 3 "is formed on the pattern forming area PA3, the illumination of the exposure light of the" N ο · 1 π pattern "is blocked by a curtain or the like. Only the pattern '1 N 〇 2 2π, π N 〇3' of the photomask M is formed on the pattern forming area PAA'3. Then, for the pattern forming area PA 2, the “N ο · 1” pattern, the π Ν 〇 2 ”pattern, and the π Ν 〇 3 π pattern are simultaneously formed. At this time, the adjustment systems AL 3 and AL 4 are used. Then, for the pattern forming area PA 1, ″ ο · 1 π pattern and π Ν 〇 2 π pattern are formed at the same time. At this time, the adjustment systems AL 5 and AL 6 are used. In addition, on the pattern forming area PA 1 When the π Ν ο · 1 π and π Ν 〇 2 π patterns are formed, the illumination of the exposure light of the π Ν ο · 3 π pattern is blocked by a curtain or the like. In this case, the correction system AL 1 ~ AL 6 is also arranged to satisfy the above-mentioned expressions (1) to (4), so two adjustment systems are arranged for one pattern forming area.

11246pif.ptd 第62頁 200307182 五、發明說明（58) 在上述實施例中，調正標誌m 1〜m 6為在X軸方向上每所定間隔配置之構成，但也可如圖1 9所示，將附隨于圖案形成區域P A 1之調正標誌m 3 1 、m 4 1 和附隨于圖案形成區域P A 3之調正標誌m 3 3 、m 4 3在Y軸方向上並列配置。同樣，也可將附隨于圖案形成區域P A 2之調正標誌m 1 2 、m 2 2和附隨于圖案形成區域P A 4之調正標誌m 1 4、m 2 4在Y軸方向上並列配置，或將附隨于圖案形成區域P A 3之調正標諸m 3 3 、m 4 3和附隨于圖案形成區域P A 5之調正標諸m 3 5 、m 4 5在Y軸方向上並列配置，或將附隨于圖案形成區域P A 4之調正標諸、m 1 4、m 2 4和附隨于圖案形成區域PA6之調正標誌ml 6 、m2 6在 Y軸方向上並列配置。然後，可將這些在Y軸方向並列之‘多個調正標誌中鄰接的2個調正標誌，藉由1個調正系統A L 1〜A L 4分別同時檢測。即，調正系統A L 1在其計測區域同時檢測調正標誌m 1 2和m 1 4，調正系統A L 2在其計測區域同時檢測調正標誌m 2 2和 m 2 4 ，調正系統A L 3在其計測區域同時檢測調正標諸m 3 1和m 3 3 ，調正系統A L 4在其計測區域同時檢測調正標誌m 4 1和m 4 3。藉此，可降低調正標誌檢測動作的次數，提高生產能力。另外這種場合也可進行設定以縮小圖案形成區域的寬度。然後，在進行曝光處理時，控制裝置C〇N T首先在將從一X側開始第1列之調正標誌的每一個藉由調正11246pif.ptd Page 62 200307182 V. Description of the invention (58) In the above embodiment, the adjustment marks m 1 to m 6 are arranged at predetermined intervals in the X-axis direction, but can also be shown in FIG. 19 The alignment marks m 3 1 and m 4 1 attached to the pattern forming area PA 1 and the alignment marks m 3 3 and m 4 3 attached to the pattern forming area PA 3 are arranged side by side in the Y-axis direction. Similarly, the adjustment marks m 1 2 and m 2 2 attached to the pattern formation area PA 2 and the adjustment marks m 1 4 and m 2 4 attached to the pattern formation area PA 4 may be juxtaposed in the Y-axis direction. Arrange or adjust the calibration marks m 3 3 and m 4 3 attached to the patterned area PA 3 and the calibration marks m 3 5 and m 4 5 attached to the patterned area PA 5 in the Y-axis direction Arranged in parallel, or the alignment marks m 1 4 and m 2 4 attached to the patterned area PA 4 and the alignment marks ml 6 and m 2 6 attached to the patterned area PA 6 are arranged side by side in the Y-axis direction . Then, two adjustment marks adjacent to each other among the plurality of adjustment marks juxtaposed in the Y-axis direction can be detected simultaneously by one adjustment system A L 1 to A L 4. That is, the calibration system AL 1 simultaneously detects the calibration marks m 1 2 and m 1 4 in its measurement area, and the calibration system AL 2 simultaneously detects the calibration marks m 2 2 and m 2 4 in its measurement area, and the calibration system AL 3 Simultaneously detect the calibration marks m 3 1 and m 3 3 in its measurement area, and the calibration system AL 4 simultaneously detects the calibration marks m 4 1 and m 4 3 in its measurement area. This can reduce the number of times of corrective mark detection and improve productivity. In this case, it is also possible to set to reduce the width of the pattern forming area. Then, when performing the exposure processing, the control device CONT first adjusts each of the alignment marks in the first column from an X side by adjusting

11246pif.ptd 第63頁 200307182 五、發明說明（59) 系統A L 1〜A L 4進行檢測後，將第2列之調正標誌的每一個藉由調正系統A L 1〜A L 4進行檢測。然後，控制裝置C〇NT —面在+X方向掃描感光基板P 一面進行對圖案形成區域PA 1的曝光處理，接著，一面在一 X方向掃描感光基板P —面進行對圖案形成區域 P A 2的曝光處理。以下同樣，控制裝置C〇N T在檢測第3列及第4列的調正標誌後，一面在+ X方向掃描感光基板P —面進行對圖案形成區域PA 3的曝光處理，接著，一面在一 X方向掃描感光基板P —面進行對圖案形成區域PA4的曝光處理。另外，控制裝置c〇 N T在檢測第5列及第6列的調正標誌後，一面在+ X 方向掃描感光基板P —面進行對圖案形成區域PA 5的曝光處理，接著，一面在一 X方向掃描感光基板P —面進‘行對圖案形成區域P A 6的曝光處理。另外，形成於感光基板P的調正標誌m 1〜m 6的間隔是根據調正系統A L 1〜A L 6的配置（間隔）而被設定，但也可將調正系統設定為可在Y軸方向移動，變更調正系統彼此的間隔。而且，如以上說明，將在感光基板P上曝光之圖案形成區域PA 1〜PA9分割為多個分區BR 1〜BR 3 ，在每分區進行調正處理及曝光處理，並關於多個分區B R 1〜B R 3的每一個依次進行該處理，所以即使感光基板P大型化，藉由將感光基板P分割為多個分區並設置與各分區對應之鐳射干涉儀P y 1〜P y 3 ，無11246pif.ptd Page 63 200307182 V. Description of the invention (59) After the system A L 1 ~ A L 4 is tested, each of the alignment marks in the second column is tested by the system A L 1 ~ A L 4. Then, the control device CONT scans the photosensitive substrate P in the + X direction to perform the exposure processing on the pattern forming area PA1, and then scans the photosensitive substrate P in the X direction to perform the pattern forming area PA2. Exposure processing. In the same manner below, the control device CONT detects the alignment marks in the third and fourth rows, and scans the photosensitive substrate P in the + X direction to perform exposure processing on the pattern forming area PA 3, and then, The photosensitive substrate P-plane is scanned in the X direction to perform exposure processing on the pattern formation area PA4. In addition, the control device cONT detects the alignment marks in the 5th and 6th columns, scans the photosensitive substrate P in the + X direction, and performs exposure processing on the pattern forming area PA 5. The photosensitive substrate P is scanned in the direction to perform the exposure processing on the pattern forming area PA 6. In addition, the intervals of the adjustment marks m 1 to m 6 formed on the photosensitive substrate P are set according to the arrangement (interval) of the adjustment systems AL 1 to AL 6. However, the adjustment system may be set so that it can be positioned on the Y axis. Move in the direction to change the interval between the adjustment systems. Further, as described above, the pattern formation areas PA 1 to PA 9 exposed on the photosensitive substrate P are divided into a plurality of divisions BR 1 to BR 3, and correction processing and exposure processing are performed in each division, and a plurality of divisions BR 1 are performed. This process is sequentially performed for each of ~ BR 3, so even if the photosensitive substrate P becomes large, the laser interferometer P y 1 to P y 3 corresponding to each partition is provided by dividing the photosensitive substrate P into a plurality of partitions.

11246pif.ptd 第64頁 200307182 五、發明說明（60) 需對1個分區切換鐳射干涉儀，也可在每個分區進行精度良好的調正處理及曝光處理。在本實施例中，調正系統為A L 1〜A L 6共6 個，但是也可在Y軸方向至少並列配置3個，藉此無需減少調正標誌的數目，就能降低調正標誌的檢測動作次數。而且，使用這些多個並列的調正系統，可同時計測多個圖案形成區域之每一個的調正標誌，從而可提高生產能力。如上所述，鐳射干涉儀P y 1〜P y 3的間隔（配置）與在X軸方向並列之圖案形成區域（分區）的每一個對應設定，當圖案形成區域各個彼此鄰接時，鐳射干涉儀P y 1〜P y 3的配置根據圖案形成區域在X軸方向的長度（大小）被設定。另一方面，當在X軸方向並疴之圖案形成區域彼此分隔設定時，多個鐳射干涉儀P y 1〜P y 3的配置根據圖案形成區域的大小及彼此的間隔被設定。在上述實施例中，移動鏡3 4 b為1個移動鏡，但是也可採用在基板載物台P S T上配置與在X軸方向上並列之多個分區B R 1〜B R 3的每一個對應分割的多個（3個）移動鏡之構成。在上述實施例中的曝光裝置E X是具有彼此鄰接之多個投影光學系統，所謂的多透鏡掃描型曝光裝置，但是關於投影光學系統為1個之掃描型曝光裝置，也可適用本發明。11246pif.ptd Page 64 200307182 V. Description of the invention (60) It is necessary to switch the laser interferometer to one zone, and it is also possible to perform fine adjustment and exposure processing in each zone. In this embodiment, there are 6 correction systems AL 1 to AL 6, but it is also possible to arrange at least 3 in parallel in the Y-axis direction, thereby reducing the detection of correction marks without reducing the number of adjustment marks. Number of actions. Furthermore, by using these multiple parallel adjustment systems, the adjustment marks of each of the plurality of pattern formation areas can be measured at the same time, thereby improving the productivity. As described above, the interval (arrangement) of the laser interferometers P y 1 to P y 3 is set correspondingly to each of the pattern forming regions (zones) juxtaposed in the X-axis direction. When the pattern forming regions are adjacent to each other, the laser interferometer The arrangement of P y 1 to P y 3 is set according to the length (size) of the pattern forming area in the X-axis direction. On the other hand, when the pattern forming areas in the X-axis direction are set apart from each other, the arrangement of the plurality of laser interferometers P y 1 to P y 3 is set according to the size of the pattern forming areas and the interval between them. In the above embodiment, the moving mirror 3 4 b is a single moving mirror. However, it is also possible to use a division on the substrate stage PST corresponding to each of the plurality of partitions BR 1 to BR 3 arranged in the X-axis direction. Composition of multiple (3) moving mirrors. The exposure device E X in the above embodiment is a so-called multi-lens scanning type exposure device having a plurality of projection optical systems adjacent to each other, but the present invention is also applicable to a scanning type exposure device having one projection optical system.

11246pif.ptd 第65頁 200307182 五、發明說明（61) 作為曝光裝置EX的用途，並不限定於在角型的玻璃板上曝光液晶顯示元件圖案之液晶用的曝光裝置，也可適用於例如半導體製造用的曝光裝置和用於製造薄膜磁頭的曝光裝置。本實施例的曝光裝置E X的光源，不只是g線（4 3 6 n m ) 、h^it(405nm) 、土線（36511111 )，也可使用K r F激態複合物鐳射（2 4 8 n m )、 A r F激態複合物鐳射（1 9 3 n m ) 、F 2鐳射（1 5 7 n m ) 〇投影光學系統P L的倍率不只是等倍系統，也可為縮小系統及擴大系統的任一個。作為投影光學系統P L ，當使用激態複合物鐳射等遠紫外線時，使用石英和螢石等透過遠紫外線的材料作為‘玻璃材料，當使用F 2鐳射時為反射折射系統或折射系統的光學系統。當在基板載物台P ST和光罩載物台MST使用線性電動機時，可使用利用空氣軸承之空氣上浮型及利用勞倫兹力或電抗力之磁上浮型的任一個。另外，載物台既可為沿導執移動的類型，也可為不設導執之無導執型。當使用平面電動機作為載物台的驅動裝置時，可將磁石單元和電樞單元的任一方與載物台接續，並將磁石單元和電樞單元的另一方設於載物台的移動面側（基座11246pif.ptd Page 65 200307182 V. Description of the Invention (61) The use of the exposure device EX is not limited to an exposure device for liquid crystals that exposes a pattern of a liquid crystal display element on a corner glass plate. It can also be applied to semiconductors, for example. An exposure device for manufacturing and an exposure device for manufacturing a thin film magnetic head. The light source of the exposure device EX of this embodiment is not only the g-line (4 3 6 nm), h ^ it (405 nm), earth line (36511111), but also a K r F exciplex laser (2 4 8 nm) ), A r F exciplex laser (193 nm), F 2 laser (157 nm) 〇 The magnification of the projection optical system PL is not only a constant magnification system, but also any of a reduction system and an expansion system . As the projection optical system PL, when far-ultraviolet rays such as an excimer complex laser are used, materials that transmit far-ultraviolet rays such as quartz and fluorite are used as a 'glass material. When F 2 laser is used, the optical system is a refracting or refracting system . When a linear motor is used for the substrate stage P ST and the photomask stage MST, either an air floating type using an air bearing or a magnetic floating type using a Lorentz force or a reactive force can be used. In addition, the stage can be either a guide type or a non-guide type without a guide. When a planar motor is used as the drive device of the stage, either one of the magnet unit and the armature unit can be connected to the stage, and the other one of the magnet unit and the armature unit can be provided on the moving surface side of the stage. (Base

11246pif.ptd 第66頁 200307182 五、發明說明（62) 藉由基板載物台PST而產生的反作用力，如日本專利早期公開之特開平8 — 1 6 6 4 7 5號公報所述，可使用框架構件機械地向地板（大地）釋放。本發明在具備有這種構造的曝光裝置中也可適用。藉由光罩載物台MST而產生的反作用力，如日本專利早期公開之特開平8 — 3 3 0 2 2 4號公報所述，可使用框架構件機械地向地板（大地）釋放。本發明在具備有這種構造的曝光裝置中也可適用。如上所述，本申請實施例的曝光裝置，是將包含本申請專利權利要求所列舉的各構成要素之各種子系統，以保持所定的機械精度、電氣精度、光學精度為目的而組裝製造的。為了確保這些各種精度，在該組裝的前後關於各種光學系統進行為了達成光學精度的調整，關於 ‘種機構系統進行為了達成機構精度的調整，關於各種電氣系統進行為了達成電氣精度的調整。從各種子系統到曝光裝置的組裝工程包含各種子系統相互的機械的接續、電氣電路的配線接續、氣壓電路的管道接續等。在從各種子系統到曝光裝置的組裝工程之前，當然有各子系統各自的組裝工程。在各種子系統到曝光裝置的組裝工程結束後，進行綜合調整，確保作為曝光裝置整體的各種精度。另外，曝光裝置的製造在溫度及清潔度等被管理之淨室中進行最為理想。半導體元件如圖2 0所示，經過進行元件的機能· 性能設計之步驟2 0 1 、製作基於該設計步驟的光罩11246pif.ptd Page 66 200307182 V. Description of the invention (62) The reaction force generated by the substrate stage PST can be used as described in Japanese Patent Application Laid-Open No. 8-1 6 6 4 7 The frame members are mechanically released to the floor (earth). The present invention is also applicable to an exposure apparatus having such a structure. The reaction force generated by the reticle stage MST can be mechanically released to the floor (earth) using a frame member, as described in Japanese Patent Laid-Open No. 8-3320 22.4. The present invention is also applicable to an exposure apparatus having such a structure. As described above, the exposure apparatus according to the embodiment of the present application is assembled and manufactured with various sub-systems including the constituent elements listed in the claims of the present application to maintain predetermined mechanical, electrical, and optical accuracy. In order to ensure these various precisions, before and after the assembly, various optical systems are adjusted to achieve optical accuracy, various types of mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are adjusted to achieve electrical accuracy. The assembly process from various subsystems to the exposure device includes the mechanical connection of various subsystems, the wiring connection of electrical circuits, and the pipe connection of pneumatic circuits. Before the assembly process from the various subsystems to the exposure device, of course, there are individual assembly processes for each subsystem. After the assembly of various subsystems to the exposure device is completed, comprehensive adjustments are performed to ensure various accuracy as a whole exposure device. In addition, the manufacturing of the exposure apparatus is ideally performed in a clean room where temperature and cleanliness are managed. As shown in FIG. 20, the semiconductor device undergoes the step 2 1 of designing the function and performance of the device, and manufactures a photomask based on the design step.

11246pif.ptd 第67頁 200307182 五、發明說明（63) (光罩原版）之步驟2 0 2 、製造元件的基材即基板 (圓片、玻璃板）之步驟2 0 3 、藉由上述之實施例的曝光裝置將光罩原版的圖案曝光於基板，並將該曝光的基板顯像之基板處理步驟2 0 4、元件組裝步驟（包括切割工程、焊接工程、包裝工程）2 0 5 、檢查步驟2 0 6等而被製造。如以上說明，對在所定方向掃描之光罩和基板，在非掃描方向上至少並列配置3個調正系統，所以不減少應檢測的調正標誌的數目，就能降低調正標誌的檢測動作次數。因此，能夠一面維持調正精度一面縮短調正處理時間，提高曝光處理的生產能力。而且，將基板上進行曝光的曝光區域分割為多個分區，在每分區進行調正處理及曝光處理，並將該處理關於‘多個分區的每一個依次進行，所以即使基板大型化，也可藉由將基板分割為多個分區並設置與各分區對應的位置檢測裝置，無需對1個分區切換位置檢測裝置，就能在每個分區進行精度良好的調正處理及曝光處理。雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍内，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。11246pif.ptd Page 67 200307182 Fifth, the description of the invention (63) (the original version of the mask) step 02, the manufacturing of the base material of the element is the substrate (wafer, glass plate) step 203, the implementation of the above The exposure device of the example exposes the pattern of the original photomask to the substrate, and develops the substrate processing step of the exposed substrate 2 0 4. Component assembly steps (including cutting process, welding process, packaging process) 2 0 5, inspection steps 2 0 6 and so on. As described above, for the mask and substrate scanned in a predetermined direction, at least three adjustment systems are arranged in parallel in the non-scanning direction, so the detection action of the adjustment mark can be reduced without reducing the number of adjustment marks to be detected. frequency. Therefore, it is possible to shorten the adjustment processing time while maintaining the adjustment accuracy, and to increase the throughput of the exposure processing. In addition, since the exposure area exposed on the substrate is divided into a plurality of partitions, the correction processing and the exposure processing are performed in each partition, and this processing is performed sequentially for each of the plurality of partitions, so that even if the substrate is large, it is possible to By dividing the substrate into a plurality of partitions and providing a position detection device corresponding to each partition, it is possible to perform accurate adjustment processing and exposure processing in each partition without switching the position detection device to one partition. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and retouching without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall be determined by the scope of the attached patent application.

11246pif.ptd 第68頁 200307182 圖式簡單說明 [圖式簡單說明] 圖1是表示本發明的曝光裝置之一實施例的概略斜視圖。圖2是圖1的概略構成圖。圖3所示為濾光器。圖4是表示具備調正系統之調正單元的概略斜視圖。圖5 A 、5 B、5 C是用於說明調正系統及A F檢測系統的圖示。圖6是調正系統的概略構成圖。圖7是A F檢測系統的概略構成圖。圖8 A、8 B、8 C是用於說明基線（b a s e 1 i n e )計測程式的圖示。圖9是用於說明本發明的曝光方法的圖示。 iil OA、10B、10C、10D是用於說明本發明的曝光方法的圖示。圖1 1 A、1 1 B、1 1 C、1 1 D是用於說明本發明的曝光方法的圖示。圖1 2A、12B、12C、12D是用於說明本發明的曝光方法的圖示。圖1 3A、13B、13C、13D是用於說明本發明的曝光方法的圖示。圖1 4A、14B、14C、14D是用於說明本發明的曝光方法的圖示。圖1 5A、15B、15C、15D是用於說明本發明的曝光方法11246pif.ptd Page 68 200307182 Brief Description of Drawings [Simplified Description of Drawings] Fig. 1 is a schematic perspective view showing an embodiment of an exposure apparatus of the present invention. FIG. 2 is a schematic configuration diagram of FIG. 1. Figure 3 shows the filter. Fig. 4 is a schematic perspective view showing an adjustment unit including an adjustment system. Figures 5 A, 5 B, and 5 C are diagrams for explaining the adjustment system and the A F detection system. FIG. 6 is a schematic configuration diagram of an adjustment system. FIG. 7 is a schematic configuration diagram of an A F detection system. 8A, 8B, and 8C are diagrams for explaining a baseline (b a s e 1 i n e) measurement program. FIG. 9 is a diagram for explaining an exposure method of the present invention. iil OA, 10B, 10C, and 10D are diagrams for explaining the exposure method of the present invention. 11A, 1B, 1C, and 1D are diagrams for explaining the exposure method of the present invention. Figs. 12A, 12B, 12C, and 12D are diagrams for explaining the exposure method of the present invention. 13A, 13B, 13C, and 13D are diagrams for explaining the exposure method of the present invention. 14A, 14B, 14C, and 14D are diagrams for explaining the exposure method of the present invention. Figures 5A, 15B, 15C, and 15D illustrate the exposure method of the present invention.

11246pif.ptd 第69頁 200307182 圖式簡單說明的圖示。圖1 6是用於說明本發明的曝光方法的流程圖。圖1 7是用於說明本發明的曝光方法的流程圖。圖 1 8A1 、18B1 、18C1 、18D1 、18A2 、18B2 、18C2 、 1 8 D 2所示為調正系統的配置例。圖1 9所示為本發明的曝光方法的其他實施例。圖2 0是表示半導體元件的製造工程之一例的流程圖。圖2 1是表示原來的曝光裝置的斜視圖。圖2 2A、22B、22C、22D是用於說明原來的曝光方法的圖示。圖2 3A、23B、23C、23D是用於說明原來的曝光方法的圖示。圖2 4A、24B、24C、24D是用於說明原來的曝光方法的圖示。 [圖式標示說明] 2 0 :視野光闌， 3 2 a 3 2 b :移動鏡 ( 位置檢測裝置 )， 3 4 a % 3 4 b :移動鏡 ( 位置檢測裝置 )， 5 0 a 5 0 g :投影區域 6 0 ( 6 0 a 6 0 g ) \ 基板側 A F 檢測系統， 7 0 ( 7 0 a 7 0 d ) : 光罩側 A F 檢測系統， 9 0 9 1 :基線計測用的標諸 9 2 :基準構件 A L ( A L 1 A L 6 ) \ 調正 (a 1 i gnme n t) 系統 B R 1 B R 3 :分區’ C 〇 N T :控制裝置 j11246pif.ptd Page 69 200307182 A simple illustration of the diagram. FIG. 16 is a flowchart for explaining the exposure method of the present invention. FIG. 17 is a flowchart for explaining the exposure method of the present invention. Figure 1 8A1, 18B1, 18C1, 18D1, 18A2, 18B2, 18C2, and 1 8 D 2 show configuration examples of the adjustment system. FIG. 19 shows another embodiment of the exposure method of the present invention. FIG. 20 is a flowchart showing an example of a manufacturing process of a semiconductor element. FIG. 21 is a perspective view showing a conventional exposure apparatus. Figures 2A, 22B, 22C, and 22D are diagrams for explaining the conventional exposure method. Figures 2A, 23B, 23C, and 23D are diagrams for explaining the conventional exposure method. Figures 2A, 24B, 24C, and 24D are diagrams for explaining the original exposure method. [Illustration of diagrammatic symbols] 2 0: field diaphragm, 3 2 a 3 2 b: moving mirror (position detection device), 3 4 a% 3 4 b: moving mirror (position detection device), 5 0 a 5 0 g : Projection area 6 0 (6 0 a 6 0 g) \ Substrate-side AF detection system, 7 0 (7 0 a 7 0 d): Mask-side AF detection system, 9 0 9 1: Standard 9 for baseline measurement 2: Reference component AL (AL 1 AL 6) \ Adjustment (a 1 i gnme nt) System BR 1 BR 3: Division 'C 〇NT: Control device j

11246pif.ptd 第70頁 200307182 圖式簡單說明 EL·.曝光光，EX:曝光裝置，Μ:光罩， Η :支架，I L :照明光學系統， m 1〜m 6 :調正標誌、，M S Τ :光罩載物台， Μ X 1 、Μ X 2 、M y 1 : 4雷射干涉儀（位置檢測裝置 )， P :感光基板（基板）， PA1〜PA9:圖案形成區域（曝光區域）， P L ( P L a〜P L g ):投影光學系統， P S T:基板載物台， P X 1 、P X 2 :鐳射干涉儀（位置檢測裝置）， P y 1〜P y 3:鐳射干涉儀（位置檢測裝置）， U :調正單元。11246pif.ptd Page 70 200307182 Schematic description of EL ·. Exposure light, EX: exposure device, M: photomask, Η: bracket, IL: illumination optical system, m 1 ~ m 6: adjustment mark, MS Τ : Photomask stage, MX 1, MX 2, My 1: 4 laser interferometer (position detection device), P: photosensitive substrate (substrate), PA1 to PA9: pattern formation area (exposure area), PL (PL a ~ PL g): projection optical system, PST: substrate stage, PX 1, PX 2: laser interferometer (position detection device), P y 1 ~ P y 3: laser interferometer (position detection device ), U: Correction unit.

11246pif.ptd 第71頁11246pif.ptd Page 71

Claims

200307182 六、申請專利範圍 1 · 一種曝光方法，適用於一面將光罩和基板在第 1方向同步移動一面對該基板曝光該光罩的圖案，其特徵是包括：檢測複數個調正系統之複數個標誌，其中該些調正系統是分別與設於該基板上的多個調正標誌呈對向，同時在與該第1方向交叉的第2方向上並列配置有3個或 3個以上；以及基於該檢測結果使該光罩和該基板的位置吻合。 2 ·如申請專利範圍第1項所述的曝光方法，其特徵是：該基板的位置吻合是對該進行曝光之曝光區域，在該第1方向上離開所定距離之2處位置或2處位置以上進行該檢測。 3 ·如申請專利範圍第1項或第2項所述的曝光方法‘，其特徵是：進行該基板的曝光之曝光區域在該第2 方向上多個並排，且該基板的位置吻合同時檢測與該多個曝光區域對應之各個調正標誌。 4 ·如申請專利範圍第1項或第2項所述的曝光方法，其特徵是：進行該基板的曝光之曝光區域在該第2 方向上多個並排，在對應該曝光區域的該第1方向的2 處位置或2處位置以上檢測該多個調正標誌後，藉由鄰接之多個曝光區域的彼此逆方向的同步移動而曝光該基板。 5 ·如申請專利範圍第3項所述的曝光方法，其特徵是：進行該基板的曝光之曝光區域在該第2方向上多200307182 6. Application Patent Scope 1. An exposure method, which is suitable for simultaneously moving a photomask and a substrate in a first direction, and exposing the photomask pattern to the substrate, which is characterized by: detecting a plurality of correction systems A plurality of marks, wherein the adjustment systems are respectively opposed to a plurality of adjustment marks provided on the substrate, and 3 or more are arranged side by side in a second direction crossing the first direction And matching the positions of the photomask and the substrate based on the detection result. 2 · The exposure method according to item 1 of the scope of patent application, characterized in that: the position of the substrate coincides with the exposure area for which the exposure is performed, and two positions or two positions away from a predetermined distance in the first direction This detection is performed as described above. 3. The exposure method according to item 1 or item 2 of the scope of patent application, characterized in that: the exposure areas for the exposure of the substrate are side by side in the second direction, and the position of the substrate is detected when the contract is contracted Each of the adjustment marks corresponding to the plurality of exposure areas. 4 · The exposure method according to item 1 or item 2 of the patent application scope, characterized in that: the exposure areas for which the substrate is exposed are side-by-side in the second direction, and in the first area corresponding to the exposed area, After detecting the plurality of adjustment marks at two or more positions in the direction, the substrate is exposed by synchronously moving the adjacent exposure areas in opposite directions to each other. 5 · The exposure method according to item 3 of the scope of patent application, characterized in that: the exposure area for exposing the substrate is more in the second direction

11246pif.ptd 第72頁 200307182 六、申請專利範圍個並為卜，在對應該曝光區域的該第1方向的2處位置或 2處位置以上檢測該多個調正標誌後，藉由鄰接之多個曝光區域的彼此逆方向的同步移動而曝光該基板。 6 · —種曝光裝置，適用於一面將光罩和基板在第 1方向同步移動一面對該基板曝光該光罩的圖案，其特徵是：具備有分別檢測設於該基板上的多個位置之調正標誌之複數個調正系統，且該調正系統在與該第1方向交叉之第2方向上並列配置有3個或3個以上。 7 ·如申請專利範圍第6項所述的曝光裝置，其特徵是：該多個調正系統的外側2個間隔，與該基板的該第2方向的長度大致相等。 ^ 8 ·如申請專利範圍第6項或第7項所述的曝光裝置，其特徵是：該多個調正系統的外側2個間隔，長於該光罩的該第2方向的長度。 9 ·如申請專利範圍第6項或第7項所述的曝光裝置，其特徵是：在該多個調正系統的外側2個上，分別鄰接設置著檢測與該基板的曝光面直交之方向的位置的 A F檢測系統。 1 0 ·如申請專利範圍第8項所述的曝光裝置，其特徵是：在該多個調正系統的外側2個上，分別鄰接設置著檢測與該基板的曝光面直交之方向的位置的A F檢測系統。11246pif.ptd Page 72 200307182 6. The scope of the patent application is different. After detecting the multiple alignment marks at two or more positions in the first direction corresponding to the exposure area, the number of adjacent signs is increased. The substrates are exposed by moving the exposed areas in synchronization with each other in opposite directions. 6 · An exposure device suitable for simultaneously moving a photomask and a substrate in a first direction and exposing the photomask to the substrate, and is characterized in that: it is provided with a plurality of positions respectively detected on the substrate There are a plurality of adjustment systems of the adjustment mark, and the adjustment system is arranged in parallel with three or more in a second direction crossing the first direction. 7 · The exposure device according to item 6 of the scope of patent application, wherein the two outer spaces of the plurality of adjustment systems are approximately equal to the length of the substrate in the second direction. ^ 8 The exposure device according to item 6 or item 7 of the patent application scope, characterized in that the two outer sides of the plurality of adjustment systems are longer than the length of the photomask in the second direction. 9 · The exposure device according to item 6 or item 7 of the scope of patent application, characterized in that: the two outer sides of the plurality of adjustment systems are respectively adjacent to each other to detect directions orthogonal to the exposure surface of the substrate Position of the AF detection system. 1 · The exposure device according to item 8 of the scope of patent application, characterized in that: two positions on the outer side of the plurality of correction systems are respectively adjacent to each other to detect positions perpendicular to the exposure surface of the substrate; AF detection system.

11246pif.ptd 第73頁 200307182 六、申請專利範圍 1 1 ·如申請專利範圍第6項或第7項所述的曝光裝置，其特徵是：該多個調正系統是並列配置在進行該基板的曝光之曝光區域的該第2方向上，且該多個調正系統是分別對應該多個曝光區域配置2個或2個以上。 1 2 ·如申請專利範圍第8項所述的曝光裝置，其特徵是：該多個調正系統是並列配置在進行該基板的曝光之曝光區域的該第2方向上，且該多個調正系統是分別對應該多個曝光區域配置2個或2個以上。 1 3 ·如申請專利範圍第9項所述的曝光裝置，其特徵是··該多個調正系統是並列配置在進行該基板的曝光之曝光區域的該第2方向上，且該多個調正系統是分別對應該多個曝光區域配置2個或2個以上。 1 4 ·如申請專利範圍第1 0項所述的曝光裝置，其4特徵是：該多個調正系統是並列配置在進行該基板的曝光之曝光區域的該第2方向上，且該多個調正系統是分別對應該多個曝光區域配置2個或2個以上。 1 5 ·如申請專利範圍第6項或第7項所述的曝光裝置，其特徵是：與該多個調正系統不同，具備有將光罩的圖案投影於該基板上之多個投影光學系統，且該多個調正系統的1個或多個配置於該多個投影光學系統的彼此之間。 1 6 ·如申請專利範圍第6項所述的曝光裝置，其特徵是：該多個調正系統之相鄰間隔為該基板的該第2 方向之長度的2/7以下長度。11246pif.ptd Page 73 200307182 VI. Patent Application Range 1 1 · The exposure device described in item 6 or 7 of the patent application range is characterized in that the multiple adjustment systems are arranged side by side on the substrate. In the second direction of the exposed area of the exposure, the plurality of adjustment systems are respectively arranged in two or more corresponding to the plurality of exposed areas. 1 2 · The exposure apparatus according to item 8 of the scope of patent application, wherein the plurality of adjustment systems are arranged side by side in the second direction of the exposure area for exposing the substrate, and the plurality of adjustment systems In the positive system, two or more than two exposure areas are arranged respectively. 1 3 The exposure device according to item 9 of the scope of patent application, characterized in that the plurality of correction systems are arranged side by side in the second direction of the exposure area where the exposure of the substrate is performed, and the plurality of correction systems The adjustment system is to arrange two or more corresponding exposure areas. 1 4 · The exposure device described in item 10 of the scope of patent application, wherein the plurality of correction systems are arranged in parallel in the second direction of the exposure area where the exposure of the substrate is performed, and the multiple Each correction system is provided with two or more corresponding exposure areas. 1 5 · The exposure device according to item 6 or 7 of the scope of patent application, characterized in that, unlike the plurality of adjustment systems, the exposure device is provided with a plurality of projection optics for projecting a pattern of a photomask onto the substrate. System, and one or more of the plurality of adjustment systems are disposed between each of the plurality of projection optical systems. 16 · The exposure apparatus according to item 6 of the scope of patent application, wherein the adjacent intervals of the plurality of adjustment systems are equal to or less than 2/7 of the length of the substrate in the second direction.

11246pi f.ptd 第74頁 200307182 六、申請專利範圍 1 7 · —種曝光方法，適用於將光罩和基板在第1 方向同步移動並對該基板曝光該光罩的圖案，其特徵是包括：將該基板分割為多個曝光區域的分區，以及在該多個曝光區域的每個分區使該光罩和該基板位置吻合後，將該光罩的圖案曝光於該基板。 1 8 ·如申請專利範圍第1 7項所述的曝光方法，其特徵是：該位置吻合是利用鄰接之該分區的位置吻合結果的一部分。 1 9 ·如申請專利範圍第1 7項所述的曝光方法，其特徵是：在該第1方向上設置多個檢測該基板的位置之位置檢測裝置，同時對應該多個曝光區域的分區設定該多個位置檢測裝置的配置。 ^ 2 0 ·如申請專利範圍第1 9項所述的曝光方法，其特徵是：該多個位置檢測裝置由多個鐳射干涉儀構成，並對應該基板的位置以切換使用的鐳射光而檢測該基板的位置。 2 1 · —種曝光裝置，適用於一面將光罩和基板在第1方向同步移動一面對該基板曝光該光罩的圖案，其特徵是包括：多個位置檢測裝置，並列配置在該第1方向上，可檢測該基板在與該第1方向交叉的第2方向之位置；對該光罩調正該基板之調正部；以及一控制裝置，在根據該基板的位置切換控制該多個11246pi f.ptd Page 74 200307182 VI. Patent application scope 17 • An exposure method suitable for synchronously moving a photomask and a substrate in a first direction and exposing the photomask pattern to the substrate, which features include: The substrate is divided into partitions of a plurality of exposed areas, and after the photomask and the substrate position are matched in each partition of the plurality of exposed areas, the pattern of the photomask is exposed on the substrate. 18 · The exposure method as described in item 17 of the scope of patent application, wherein the positional matching is a part of the positional matching result using the adjacent partitions. 19 · The exposure method according to item 17 of the scope of patent application, characterized in that: a plurality of position detection devices for detecting the position of the substrate are provided in the first direction, and the partition settings corresponding to the plurality of exposure areas are set at the same time Configuration of the plurality of position detection devices. ^ 2 0 · The exposure method according to item 19 of the scope of patent application, characterized in that the plurality of position detection devices are constituted by a plurality of laser interferometers, and the position of the substrate is detected by switching the used laser light. The location of the substrate. 2 1 · An exposure device suitable for simultaneously moving a photomask and a substrate in a first direction and exposing the photomask pattern to the substrate, which is characterized in that it includes: a plurality of position detection devices arranged side by side in the first In one direction, a position of the substrate in a second direction crossing the first direction can be detected; a correction section for correcting the mask to the substrate; and a control device that switches and controls the plurality of positions according to the position of the substrate Each

11246pif.ptd 第75頁 200307182 六、申請專利範圍位置檢測裝置的同時，對應在該基板上曝光的曝光區域選擇該多個位置檢測裝置中的1個，並根據該位置檢測裝置的檢測位置，藉由該調正部進行調正曝光。 2 2 ·如申請專利範圍第2 1項所述的曝光裝置，其特徵是包括：設於可移動支援該基板之基板載物臺上的移動鏡；以及藉由向該移動鏡照射鐳射光而檢測該基板載物台在該第2方向的位置之鐳射干涉儀，其中該控制裝置根據該基板載物台的移動而切換該多個鐳射干涉儀。 2 3 ·如申請專利範圍第2 1項所述的曝光裝置，其特徵是：該基板在該第1方向上被分割為多個曝光區域‘的分區，且該控制裝置對應該曝光區域的分區選擇該多個位置檢測裝置中的1個，同時在該曝光區域的每個分區切換該多個位置檢測裝置。 2 4 ·如申請專利範圍第2 1項所述的曝光裝置，其特徵是：該多個位置檢測裝置的間隔，是對應於該曝光區域的分區之該第1方向的間隔而設定。 2 5 · —種元件製造方法，其特徵是包括：使用如申請專利範圍第1項、或第2項、或第1 7項、或第1 8項、或第1 9項或第2 0項所述的曝光方法，將該光罩上所描繪之元件圖案在該基板上曝光之工程；以及11246pif.ptd Page 75 200307182 6. When applying for a patent range position detection device, select one of the plurality of position detection devices corresponding to the exposure area exposed on the substrate, and borrow according to the detection position of the position detection device. The exposure is adjusted by this adjustment section. 2 2 · The exposure device according to item 21 of the scope of patent application, comprising: a moving mirror provided on a substrate stage that can move and support the substrate; and irradiating the moving mirror with laser light to A laser interferometer that detects the position of the substrate stage in the second direction, wherein the control device switches the plurality of laser interferometers according to the movement of the substrate stage. 2 3 · The exposure device according to item 21 of the scope of patent application, wherein the substrate is divided into a plurality of exposure regions in the first direction, and the control device corresponds to the exposure regions. One of the plurality of position detection devices is selected, and the plurality of position detection devices are switched in each partition of the exposure area at the same time. 24. The exposure device according to item 21 of the scope of patent application, wherein the interval between the plurality of position detection devices is set in accordance with the interval in the first direction corresponding to the partition of the exposure area. 2 5 · —A method for manufacturing a component, characterized in that it includes: using, for example, the scope of patent application for item 1 or 2 or item 17 or item 18 or item 19 or item 20 The exposure method, a process of exposing the element pattern drawn on the photomask on the substrate; and

11246pif.ptd 第76頁 200307182 六、申請專利範圍將該曝光的基板顯像之工程。 ιικαι 第77頁 11246pif.ptd11246pif.ptd Page 76 200307182 6. Scope of Patent Application The project of developing the exposed substrate. ιικαι Page 77 11246pif.ptd