CN113820789B - All-optical diode and preparation method and application thereof - Google Patents

All-optical diode and preparation method and application thereof Download PDF

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CN113820789B
CN113820789B CN202010556916.0A CN202010556916A CN113820789B CN 113820789 B CN113820789 B CN 113820789B CN 202010556916 A CN202010556916 A CN 202010556916A CN 113820789 B CN113820789 B CN 113820789B
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zinc oxide
layered material
optical
dimensional layered
nano zinc
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CN113820789A (en
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王迎威
王一多
肖思
何军
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Central South University
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/27—Optical coupling means with polarisation selective and adjusting means
    • G02B6/2746—Optical coupling means with polarisation selective and adjusting means comprising non-reciprocal devices, e.g. isolators, FRM, circulators, quasi-isolators
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3501—Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3523—Non-linear absorption changing by light, e.g. bleaching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12123—Diode
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12157—Isolator

Abstract

The invention relates to an all-optical diode and a preparation method and application thereof. The all-optical diode comprises a two-dimensional layered material Mxenes layer, a nano zinc oxide layer and a substrate; the nano zinc oxide layer is attached to the substrate, and the two-dimensional layered material Mxenes layer is attached to the nano zinc oxide layer. The transmittance of the all-optical diode designed by the invention is changed by 32% when light enters from the forward direction and the reverse direction of the diode, and the effect of realizing nonreciprocal transmission of the light in the transmission direction, namely, achieving forward conduction and reverse cut-off of the input light is realized. The invention realizes the preparation of the all-optical diode by a coating method. The all-optical diode designed and prepared by the invention has the advantages of high unidirectional transmittance, high optical damage threshold, low requirement on working environment, very good non-reciprocal propagation characteristic of light, adjustable working waveband and the like. Meanwhile, the obtained all-optical diode has good stability and has wide application prospect in photonic chips and all-optical network communication.

Description

All-optical diode and preparation method and application thereof
Technical Field
The invention relates to the field of all-optical network communication, in particular to an all-optical diode based on a two-dimensional layered material Mxenes and a nano zinc oxide composite film, and a preparation method and application thereof.
Background
The development of new generation information technology is an important component for constructing a modern industrial technology system with international competitiveness. Among them, optoelectronic devices and integration, nanomaterials and devices, advanced functional materials, etc. are the key fields of future information technology development. Conventional silicon-based filters, amplifiers, wavelength converters, electrical diodes, etc. are basic optoelectronic application components. However, the continuous demands for faster speed, ultrahigh integration density and extremely low power consumption of silicon-based optoelectronic devices gradually approach the physical limit of the devices. Aiming at the core technical bottlenecks of the information technology in the aspects of speed, energy consumption and the like, the development of an all-optical device based on the basic principle of nanophotonics and a new nano material is a very potential strategy for replacing a silicon-based photoelectric device. Based on physical nature analysis, the ultra-fast response speed of photons is close to 10 -12 Or even 10 -15 s is much greater than the electron response speed 10 -9 s, thus, photons as information carriersThe body is expected to greatly improve the response speed of the next generation photoelectronic device of the device.
Optical diodes, also known as optical isolators (OA), are a class of spatially non-reciprocal passive devices. Similar to the electrical diode, which can realize unidirectional propagation of electrical signals, the optical diode breaks time reversal symmetry in the light propagation direction, thereby effectively realizing unidirectional propagation of optical signals. Therefore, the optical diode has great application potential in the fields of optical isolators, optical storage, optical amplifiers, optical filters and the like. At present, the realization of the optical diode mainly realizes the nonreciprocal transmission of light in the transmission direction by constructing a novel nano structure or an optical effect through nano engineering, such as photonic crystal, second harmonic generation, magneto-optical effect, liquid crystal effect, photoacoustic effect, thermo-optical effect and the like. These concepts for realizing the photodiode still face disadvantages of high cost, poor stability, and being not conducive to system miniaturization and integration. In recent years, scientists have proposed the use of nonlinear optical effects induced by optical kerr media to implement optical diode applications. The nonlinear absorption response of the dielectric material mainly comprises a nonlinear saturated absorption process and a nonlinear reverse saturated absorption process. Based on the basic optical principle, the composite material film constructed by the nano materials with different nonlinear optical responses meets the requirement of an optical nonreciprocal propagation process, and the method is an effective way for realizing the optical diode. Two-dimensional materials represented by graphene, graphene-like materials (such as grapyne) and transition metal chalcogenide have the characteristics of ultrathin thickness, easiness in preparation and the like, have excellent nonlinear optical response characteristics, and are fully researched for nonlinear optical absorption and nonlinear refraction characteristics. Therefore, the nonlinear optical response process of the novel two-dimensional material is fully researched, and an optical nonreciprocal propagation system based on a two-dimensional material system is constructed, so that a new direction is opened for the application research of the novel optical diode device.
Disclosure of Invention
In view of this, the invention first tries an all-optical diode based on a two-dimensional layered material mxexens and a nano zinc oxide composite film, and the all-optical diode has many advantages of high one-way transmittance, high optical damage threshold, low requirement on working environment, very good non-reciprocal propagation characteristic of light, adjustable working waveband, and the like. Meanwhile, the all-optical diode designed by the invention has good stability and has wide application prospect in photonic chips and all-optical network communication.
The invention relates to an all-optical diode based on a two-dimensional layered material Mxenes and a nano zinc oxide composite film, which comprises a two-dimensional layered material Mxenes layer, a nano zinc oxide layer and a substrate; the nano zinc oxide layer is attached to the substrate, and the two-dimensional layered material Mxenes layer is attached to the nano zinc oxide layer;
the full-light diode utilizes the saturable absorption characteristic of a two-dimensional layered material Mxenes and the reverse saturable absorption characteristic of nano zinc oxide, the transmittance of light is changed by 32% when the light is incident from the forward direction and the reverse direction of the film, and the forward direction conduction and reverse direction cut-off effects of the input light are realized. In the present invention, incidence from the side of the mxeenes layer of the two-dimensional layered material is defined as forward incidence, and incidence from the side of the substrate is defined as reverse incidence.
The invention relates to a full-light diode based on a two-dimensional layered material Mxenes and a nano zinc oxide composite film, wherein the transverse dimension of the two-dimensional layered material Mxenes is more than 100nm, the thickness of the two-dimensional layered material Mxenes is 5-15nm, and the particle size of the nano zinc oxide is 30 +/-10 nm.
The invention relates to an all-optical diode based on a two-dimensional layered material Mxenes and a nano zinc oxide composite film.
The invention relates to a full-optical diode based on a two-dimensional layered material Mxenes and a nano zinc oxide composite film, wherein the number of layers of the two-dimensional layered material Mxenes is 1-10.
The invention relates to an all-optical diode based on a two-dimensional layered material Mxenes and a nano zinc oxide composite film. The two-dimensional layered material Mxenes layer is also attached on the nano zinc oxide layer through Van der Waals force. As a preferred embodiment; the total thickness of the two-dimensional layered material Mxenes is 50-100 nm; the thickness of the nano zinc oxide layer is 50-100 nm.
The invention relates to an all-optical diode based on a two-dimensional layered material Mxenes and a nano zinc oxide composite film.
On the other hand, the invention provides a preparation method of a full-light diode based on a two-dimensional layered material Mxenes and a nano zinc oxide composite film, which comprises the following steps:
respectively mixing nano zinc oxide and two-dimensional layered material Mxenes with a solvent, and stirring and ultrasonically dispersing to obtain a film spin-coating solution for an all-optical diode, wherein the mass concentrations of the nano zinc oxide and the two-dimensional layered material Mxenes in the film spin-coating solution are both 1 mg/ml.
Setting spin coating parameters, spin coating the nano zinc oxide solution on a substrate and heating and curing for 20min, and then spin coating the two-dimensional layered material Mxenes solution on the zinc oxide film and heating and curing for 20min, wherein the spin coating and heating parameters are consistent.
Wherein the two-dimensional layered material Mxenes has a chemical general formula of M n+1 X n (n is an integer of 1 to 3), M represents a transition metal, and X represents carbon or nitrogen. Further, the two-dimensional layered material mxexenes is at least one of a titanium carbide nanosheet, a niobium carbide nanosheet, a vanadium carbide nanosheet and a molybdenum carbide nanosheet. Furthermore, the two-dimensional layered material Mxenes can be obtained by common wet etching, and specifically, can be obtained by directly etching a metal element in a precursor MAX phase ceramic material by using an acid.
Optionally, a solvent in the film spin-coating solution is ethyl lactate containing a stabilizer, and the mass ratio of the stabilizer to the ethyl lactate is (0.03-0.06): 1. further, the stabilizer is at least one of polyvinyl alcohol, polymethyl methacrylate and polystyrene.
The preparation method designed by the invention is simple, the process flow is short, the controllability is strong, and the prepared composite film has strong stability and small pollution, and is expected to be used for large-scale batch production.
Meanwhile, the invention also provides an experimental method of the all-optical diode based on the double-probe open-hole Z-scan test system, and the experimental device comprises the following steps:
the laser device is sequentially provided with a beam splitter, a first focusing lens, an electric displacement control system, a sample control console to be detected, a second focusing lens and a first optical power detector along the propagation direction of a main optical axis of laser generated by the laser device. The mirror surface of the beam splitter and the transmission direction of the main optical axis of the laser form an included angle of 45 degrees, and a second optical power detector is arranged in the reflection direction of the beam splitter. The first optical power detector is connected with the first optical power meter gauge head, the second optical power detector is connected with the second optical power meter gauge head, and the first optical power meter gauge head, the second optical power meter gauge head and the electric displacement control system are all connected with the PC.
The laser is a pulse laser and is at least one of a nanosecond pulse laser, a picosecond pulse laser and a femtosecond pulse laser.
The laser generated by the pulse laser is a Gaussian laser pulse.
The first optical power detector and the second optical power detector are identical detectors.
The first focusing lens and the second focusing lens are congruent lenses.
When a sample to be detected is controlled by an electric displacement system to be from-Z to + Z in the Z-axis direction, the Z-scan curve collected by the first optical power meter probe is a valley-shaped curve symmetrical about Z being 0, and the nonlinear absorption coefficient of the sample to be detected is greater than 0 and is expressed as reverse saturated absorption; the obtained Z-Scan curve is a peak shape curve symmetric with respect to Z equal to 0, and the nonlinear absorption coefficient of the sample to be measured is less than 0, which indicates a saturated absorption.
Furthermore, data collected by the first optical power meter probe is divided by data obtained by synchronizing the second optical power meter probe, so that the data can be optimized, and influences caused by output laser power changes are eliminated.
The all-optical diode designed and prepared by the invention can be used in the fields of all-optical communication, optical fiber photonics, all-optical signal processing and the like.
The invention tries the all-optical diode composed of a two-dimensional layered material Mxenes layer, a nano zinc oxide layer and a substrate for the first time; compared with other types of photonic diodes, the photonic diode has the advantages of simple manufacture, easy miniaturization, adjustable and predictable characteristics, capability of being extended to other wavelengths, and the like.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly described below. The specific embodiments described herein are merely illustrative of the invention and do not delimit the invention.
FIG. 1 is a scanning electron microscope image and a transmission electron microscope image of a two-dimensional layered material Mxenes provided in example 1 of the present invention;
FIG. 2 is a schematic diagram of a dual probe open-hole Z-scan test system provided by an embodiment of the present invention;
fig. 3 is an exploded schematic view of a full optical diode spin-coated on a transparent glass substrate according to an embodiment of the present invention;
fig. 4 is a graph showing the result of the nonlinear absorption test of the film spin-coated on the transparent glass substrate according to example 3 of the present invention, wherein (a) in fig. 4 is the result of the test of the two-dimensional layered material mxeenes film, (b) in fig. 4 is the result of the test of the nano zinc oxide film, and (c) in fig. 4 is the result of the test of the blank sample film.
Fig. 5 is a graph illustrating test results of a composite film spin-coated on a transparent glass substrate according to an embodiment of the present invention, wherein the test results include a forward test result and a reverse test result of the composite film.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Other embodiments, which can be devised by those skilled in the art without departing from the principles of the invention, are within the scope of the invention.
Example 1
Two-dimensional layered Nb 2 A process for the preparation of C Mxenes materials, comprising
(1) Mixing 10g of Nb 2 Adding AlC ceramic powder into 80ml of 40 wt% HF solution, and stirring at high speed for two days at room temperature to obtain multiple layers of Nb 2 C, HF solution. Centrifuging to remove the lower layer precipitate, adding deionized water, and repeating the process until the pH of the aqueous solution is close to 5 to obtain multiple layers of Nb 2 C, water solution.
(2) Cleaning the multilayer Nb 2 Adding C into tetrapropylammonium hydroxide (TPAOH) solution, and stirring at high speed for three days at room temperature to promote multi-layer Nb 2 C, stirring, and then carrying out ultrasonic treatment on the multi-layer tetrapropylammonium hydroxide (TPAOH) solution for 6 hours by using a low-temperature water bath ultrasonic machine to obtain few-layer Nb 2 C tetrapropylammonium hydroxide (TPAOH). Then the solution is subjected to freeze drying treatment to obtain few-layer Nb 2 And C, powder.
Multilayer Nb obtained in this example 2 The scanning electron micrograph of C shows a typical "accordion" structure as shown in fig. 1 (a); few layer Nb 2 The transmission electron micrograph of C shows that the transparency is high and the number of layers is small, as shown in FIG. 1 (b).
Example 2
A method for preparing an all-optical diode based on a two-dimensional layered material Mxenes and a nano zinc oxide composite film comprises the following steps
Adding polymethyl methacrylate (PMMA) particles into an ethyl lactate solution, and stirring at a high speed for 2 days to obtain a PMMA ethyl lactate solution with the mass fraction of 4%; a small number of Nb layers obtained in example 1 2 And respectively adding the powder C and the nano zinc oxide powder into the PMMA ethyl lactate solution to respectively obtain a 5mg/mL Mxenes solution and a 5mg/mL nano zinc oxide solution.
Adding four quartz glass sheets of 5mm × 20mm × 20mm into acetone solution, performing ultrasonic treatment for 15min, taking out, air drying, adding into alcohol solution, performing ultrasonic treatment for 15min, air drying, adding into deionized water solution, and performing ultrasonic treatment for 15 min; then, placing the cleaned quartz glass sheet on a sample table of a spin coating instrument, and setting spin coating parameters of 1 section 800rpm/6s and 2 sections 1200/10 s; dropping 2 drops of the Mxenes solution on a first glass sheet, starting spin coating, and curing on a constant temperature table at 130 ℃ for 15min after the spin coating is finished to obtain a sample 2; dripping 2 drops of the zinc oxide solution on the second glass sheet and the third glass sheet respectively, starting spin coating, and curing on a constant temperature table at 130 ℃ for 15min after the spin coating is finished to obtain two samples 3; then 2 drops of the Mxenes solution are dropped on a sample 3 and spin coating is started, and after the spin coating is finished, the sample 4 is placed on a constant temperature table at 130 ℃ for solidification for 15 min; and finally, dripping two 4% PMMA ethyl lactate solution drops onto a fourth glass sheet, starting spin coating, and curing on a constant temperature table at 130 ℃ for 15min after the spin coating is finished to obtain a sample 1 as a blank sample.
Fig. 3 is a schematic view of the structure of sample 4, and incidence from the Nb2C side is defined as normal incidence, and incidence from the glass substrate side is defined as reverse incidence.
Example 3
Nonlinear absorption test of two-dimensional layered material Mxenes and nano zinc oxide film
A double-probe open-hole Z-scan test system is constructed, and the structure of the double-probe open-hole Z-scan test system is shown in fig. 2, and the double-probe open-hole Z-scan test system comprises a laser source 101, a beam splitter 102, a first focusing lens 103, a sample to be tested 104, a second focusing lens 105, a first optical power detector 106, and a second optical power detector 107 on a reflection light path of the beam splitter. Specifically, in this embodiment, the laser source is a femtosecond pulse laser, and the center wavelength, the pulse width, and the repetition frequency are 800nm, 35fs, and 2kHz, respectively; the first and second focusing lenses are identical lenses, and the focal length is 150 mm; the sample to be detected gradually moves from-Z to + Z under the control of the stepping motor, the laser penetrating through the sample to be detected is collected by the first optical power detector after being collected by the second focusing lens, and the collected optical power is changed along with the position of the sample, namely a nonlinear absorption signal of the sample to be detected; further, the nonlinear absorption signal can be optimized by dividing by the synchronous optical power signal collected by the second optical power detector.
The sample 1 prepared in example 2 was placed at the position of the sample to be measured, and the surface of the sample 4 was ensured to be perpendicular to the optical path direction, and then the dual-probe open-cell Z-scan system was started to obtain a straight curve as shown in fig. 4(a), which indicates that the blank sample did not have a significant nonlinear absorption signal, and the influence of the substrate and the PMMA film could be excluded in the following experiments.
The sample 2 prepared in example 2 was placed at the position of the sample to be measured, the surface of the sample 1 was ensured to be perpendicular to the optical path direction, and then the dual-probe open-cell Z-scan system was started to obtain a peak shape curve symmetrical about Z ═ 0 as shown in fig. 4(b), which indicates that the two-dimensional layered material Mxenes is a saturated absorbing material.
The sample 3 prepared in example 2 was placed at the position of the sample to be measured, the surface of the sample 2 was ensured to be perpendicular to the optical path direction, and then the dual-probe open-cell Z-scan system was started to obtain a valley shape curve symmetric about Z ═ 0 as shown in fig. 4(c), which indicates that the nano zinc oxide is a reverse saturable absorption material.
Effect example 1
Placing the sample 4 prepared in the embodiment 2 at the position of the sample to be tested of the open-pore Z-scan test system in the forward direction, starting the test system, calculating the optical power density of each point on the Z axis at each point to obtain a curve shown as the upper half part of a graph 5, and showing that the forward transmittance of the sample is gradually increased along with the increase of the light intensity; the sample 4 prepared in example 2 was placed in the opposite direction at the position of the sample to be tested in the open-cell Z-scan test system, the test system was started, and the optical power density at each point on the Z-axis was calculated to obtain the curve shown in the lower half of fig. 5, which shows that the reverse transmittance of the sample gradually decreased with the increase of the light intensity.
The forward test and the reverse test are combined and compared, and the forward test and the reverse test are carried out at the optical power density of Gw/cm 2 The transmittance was changed by 32%, so that it can be concluded that: under the condition of the same light irradiation, the transmitted light intensity of the sample 4 under the normal incidence and reverse incidence conditions is changed to 32%, and the effects of normal conduction and reverse cut-off are achieved. The feasibility of the invention in the aspect of application of the photodiode can be demonstrated by combining the above embodiments, and the invention has wide application prospect in the field of all-optical networks.
In view of the foregoing description of the preferred embodiments of the present invention, it should be noted that various modifications and adaptations of the invention may occur to those skilled in the art without departing from the spirit of the invention and should be considered within the scope of the invention.
Comparative example 1
The concentration of the solution used in spin coating in example 2 was changed to 1mg/mL, and other conditions were kept the same as in example 2, and the resulting photonic diodes were tested in a Z-scan system.
(1) Preparation of 1mg/mLNb 2 C and the nano ZnO solution are subjected to operations of spin coating, curing, spin coating and curing to obtain a photonic diode film;
(2) carrying out forward and reverse tests on the prepared photonic diode in a Z-scan system, and converting the obtained curve into a T-I relation curve; (3) the difference between the forward and reverse transmittances of the thus-prepared photonic diode was calculated to be only 10%.
(4) The result obtained in the step (3) shows that the performance of the photon diode is deteriorated due to the fact that the concentration of the solution is too low during preparation.
Comparative example 2
The time in the spin coating parameters in the example 2 is changed, namely the thickness of the photonic diode film is changed, other conditions are kept consistent with those in the example 2, and the prepared photonic diode is tested in a Z-scan system.
(1) Preparation of 5mg/mLNb 2 C, changing spin coating parameters to 1 section of 800rpm/3s and 2 sections of 1200/5s, and obtaining the photonic diode film through the operations of spin coating, curing, spin coating and curing;
(2) carrying out forward and reverse tests on the prepared photonic diode in a Z-scan system, and converting the obtained curve into a T-I relation curve;
(3) the difference value of the positive transmittance and the reverse transmittance of the prepared photon diode is 30 percent through calculation;
(4) the result obtained in step (3) is similar to that obtained in effect example 1, but the optical transmittance is only 40% due to the thickness, and the absorption of light is large, which is not favorable for practical use.

Claims (10)

1. An all-optical diode, characterized by: the all-optical diode comprises a two-dimensional layered material Mxenes layer, a nano zinc oxide layer and a substrate; the nano zinc oxide layer is attached to the substrate, and the two-dimensional layered material Mxenes layer is attached to the nano zinc oxide layer; the all-optical diode is based on a two-dimensional layered material Mxenes and a nano zinc oxide composite film;
the full-light diode utilizes the saturation absorption characteristic of the two-dimensional layered material Mxenes and the reverse saturation absorption characteristic of the nano zinc oxide, the transmittance of light is changed by 32% when the light enters from the positive direction and the reverse direction of the film, and the positive direction conduction and reverse direction cut-off effects of input light are realized.
2. The all-optical diode of claim 1, wherein: the transverse size of the two-dimensional layered material Mxenes is larger than 100nm, the thickness of the two-dimensional layered material Mxenes is 5-15nm, and the particle size of the nano zinc oxide is 30 +/-10 nm.
3. The all-optical diode of claim 2, wherein: the two-dimensional layered material Mxenes comprises at least one of titanium carbide nanosheets, niobium carbide nanosheets, vanadium carbide nanosheets and molybdenum carbide nanosheets.
4. The all-optical diode of claim 1, wherein: the number of layers of the two-dimensional layered material Mxenes is 1-10; the total thickness of the two-dimensional layered material Mxenes is 50-100 nm; the thickness of the nano zinc oxide layer is 50-100 nm.
5. The all-optical diode of claim 1, wherein: the nano zinc oxide layer is attached to the surface of the substrate through van der waals force; the two-dimensional layered material mxeenes layer is attached to the nano zinc oxide layer by van der waals forces.
6. The all-optical diode of claim 5, wherein: the substrate comprises at least one of an optical fiber end face, double-sided polished sapphire, a flexible transparent substrate and transparent glass.
7. A method for producing the all-optical diode according to any one of claims 1 to 6, comprising:
respectively mixing nano zinc oxide and a two-dimensional layered material Mxenes with a solvent, stirring and ultrasonically dispersing to obtain a film spin coating solution for an all-optical diode, wherein the chemical general formula of the two-dimensional layered material Mxenes is M n+1 X n The n is 1-3, the M represents transition metal, the X represents carbon or nitrogen, and the mass concentrations of the nano zinc oxide and the two-dimensional layered material Mxenes in the film spin-coating solution are both 4.5-5.5 mg/mL.
8. The method of claim 7, wherein: the solvent in the film spin coating solution is ethyl lactate containing a stabilizer, and the mass ratio of the stabilizer to the ethyl lactate is (0.03-0.06): 1.
9. the method of claim 8, wherein the stabilizer is at least one of polyvinyl alcohol, polymethyl methacrylate, and polystyrene.
10. Use of the all-optical diode according to any one of claims 1 to 6, characterized in that: the applications include its use in at least one of the fields of all-optical communications, fiber optics, and all-optical signal processing.
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Citations (1)

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Publication number Priority date Publication date Assignee Title
CN107001051A (en) * 2014-09-25 2017-08-01 德雷塞尔大学 Show the physical form of the MXene materials of new electrical and optical properties

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US10804674B2 (en) * 2016-10-06 2020-10-13 Korea Institute Of Science And Technology Saturable-absorber-based laser system

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Publication number Priority date Publication date Assignee Title
CN107001051A (en) * 2014-09-25 2017-08-01 德雷塞尔大学 Show the physical form of the MXene materials of new electrical and optical properties

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Saturable Absorption in 2D Ti3C2 MXene Thin Films for Passive Photonic Diodes;Yongchang Dong et al.;《ADVANCED MATERIALS》;20180308;1705714 *

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