CN113816755B - Two-dimensional silicon carbide/silicon carbide composite bar and preparation method of connecting piece - Google Patents
Two-dimensional silicon carbide/silicon carbide composite bar and preparation method of connecting piece Download PDFInfo
- Publication number
- CN113816755B CN113816755B CN202111198015.XA CN202111198015A CN113816755B CN 113816755 B CN113816755 B CN 113816755B CN 202111198015 A CN202111198015 A CN 202111198015A CN 113816755 B CN113816755 B CN 113816755B
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- deposition
- gas
- dimensional
- composite material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 332
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 326
- 239000002131 composite material Substances 0.000 title claims abstract description 108
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000010410 layer Substances 0.000 claims abstract description 66
- 239000011159 matrix material Substances 0.000 claims abstract description 54
- 239000002356 single layer Substances 0.000 claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 230000003647 oxidation Effects 0.000 claims abstract description 15
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims description 245
- 230000008021 deposition Effects 0.000 claims description 179
- 239000007789 gas Substances 0.000 claims description 121
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 84
- 229910052786 argon Inorganic materials 0.000 claims description 42
- 238000006243 chemical reaction Methods 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 36
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 30
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 28
- 239000004744 fabric Substances 0.000 claims description 26
- 239000001257 hydrogen Substances 0.000 claims description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims description 26
- DWAWYEUJUWLESO-UHFFFAOYSA-N trichloromethylsilane Chemical compound [SiH3]C(Cl)(Cl)Cl DWAWYEUJUWLESO-UHFFFAOYSA-N 0.000 claims description 25
- 230000003197 catalytic effect Effects 0.000 claims description 20
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 20
- 238000003754 machining Methods 0.000 claims description 17
- 238000009958 sewing Methods 0.000 claims description 16
- 238000010030 laminating Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 12
- 239000004917 carbon fiber Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 239000011153 ceramic matrix composite Substances 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 239000012159 carrier gas Substances 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 9
- 150000002431 hydrogen Chemical class 0.000 claims description 8
- 230000003064 anti-oxidating effect Effects 0.000 claims description 6
- 239000000969 carrier Substances 0.000 claims description 6
- 239000012495 reaction gas Substances 0.000 claims description 5
- 238000005137 deposition process Methods 0.000 abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052799 carbon Inorganic materials 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 19
- 239000002184 metal Substances 0.000 description 5
- 239000004745 nonwoven fabric Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 230000037303 wrinkles Effects 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009954 braiding Methods 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002296 pyrolytic carbon Substances 0.000 description 1
- 125000003866 trichloromethyl group Chemical group ClC(Cl)(Cl)* 0.000 description 1
- 238000007514 turning Methods 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/71—Ceramic products containing macroscopic reinforcing agents
- C04B35/78—Ceramic products containing macroscopic reinforcing agents containing non-metallic materials
- C04B35/80—Fibres, filaments, whiskers, platelets, or the like
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16B—DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS OR WEDGES; JOINTS OR JOINTING
- F16B19/00—Bolts without screw-thread; Pins, including deformable elements; Rivets
- F16B19/04—Rivets; Spigots or the like fastened by riveting
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16B—DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS OR WEDGES; JOINTS OR JOINTING
- F16B35/00—Screw-bolts; Stay-bolts; Screw-threaded studs; Screws; Set screws
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3817—Carbides
- C04B2235/3821—Boron carbides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/386—Boron nitrides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/52—Constituents or additives characterised by their shapes
- C04B2235/5208—Fibers
- C04B2235/5216—Inorganic
- C04B2235/524—Non-oxidic, e.g. borides, carbides, silicides or nitrides
- C04B2235/5244—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/52—Constituents or additives characterised by their shapes
- C04B2235/5208—Fibers
- C04B2235/5252—Fibers having a specific pre-form
- C04B2235/5256—Two-dimensional, e.g. woven structures
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/612—Machining
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/614—Gas infiltration of green bodies or pre-forms
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6567—Treatment time
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/94—Products characterised by their shape
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
Abstract
The invention relates to a preparation method of a composite material fastener, in particular to a preparation method of a two-dimensional silicon carbide/silicon carbide composite material bar and a connecting piece, which are mainly applied to connection assembly of ultra-high-temperature, high-strength and oxidation-resistant composite material products. The invention overcomes the defects of large performance difference and the like caused by long production period and uneven density of the existing three-dimensional needled carbon/silicon carbide composite bolt, the preform for processing the bar blank is formed by riveting a plurality of layers of two-dimensional silicon carbide/silicon carbide composite blank flat plates, and the thickness of a single-layer two-dimensional silicon carbide/silicon carbide composite blank flat plate is positioned in a range of 3-6 mm, so that the density of each part can be kept consistent when a SiC matrix is deposited, and meanwhile, the deposition process of the bar blank adopts SiC/B 4 The matrix C can further improve the density uniformity of the bar blank; compared with the existing preparation method of the carbon/silicon carbide composite bolt, the shear strength of the bolt is obviously improved to 240-320 Mpa after the preparation method of the silicon carbide/silicon carbide composite bolt is adopted.
Description
Technical Field
The invention relates to a preparation method of a composite material fastener, in particular to a preparation method of a two-dimensional silicon carbide/silicon carbide composite material bar and a connecting piece, which are mainly applied to connection assembly of ultra-high-temperature, high-strength and oxidation-resistant composite material products.
Background
The ceramic matrix composite is a novel thermal structure/function integrated strategic material with the performance advantages of metal materials, ceramic materials and carbon materials, has the characteristics of high temperature resistance, low density, high specific strength, high specific modulus, oxidation resistance, ablation resistance, insensitivity to cracks, no catastrophic damage and the like, and has wide application in the fields of aviation, aerospace, satellite aerospace, nuclear energy, photovoltaics and the like.
Because of the limitation of the existing composite material braiding and molding process technology, the ceramic matrix composite material is difficult to develop the integral preparation of large-size, precise and complex product components. Therefore, in order to meet the requirements of the aircraft in the aerospace field on higher service temperature and mechanical properties of the connector, developing the composite connector with high performance and low cost has important significance on composite materials, especially on ceramic matrix composite engineering application.
At present, a preparation method of a three-dimensional needled carbon/silicon carbide composite bolt is disclosed in an invention patent with an issued publication number of CN 102775176B. The three-dimensional needled carbon felt preform: the used 12K T700 carbon fiber is used for manufacturing a tire net, a single-layer 0-degree non-woven fabric, a single-layer tire net, a single-layer 90-degree non-woven fabric and a single-layer tire net are alternately and circularly overlapped to the designed thickness, and then the single-layer non-woven fabric, the single-layer tire net and the single-layer tire net are vertically penetrated between the non-woven fabrics along the thickness in a relay needling mode. And the bolt is processed into the required bolt size by assisting with a pyrolytic carbon interface layer and a silicon carbide matrix. The room temperature tensile strength of the bolt prepared by the method is about 180-200 MPa, and the shearing strength is about 80-100 MPa. However, the bolt density prepared by the preparation method is uneven, so that the bolt performance difference of the same batch is large, and meanwhile, the preparation method is complex in process, long in production period and not beneficial to industrial production.
Disclosure of Invention
In order to further improve the strength of the ceramic matrix composite connector, meet the requirements of a new generation of aircrafts in the future aerospace field on the performance of the connector in a harsher service environment, overcome the defects of large performance difference and the like caused by long production period and uneven density of the existing three-dimensional needled carbon/silicon carbide composite bolt, and provide the two-dimensional silicon carbide/silicon carbide composite bar and the preparation method of the connector.
The technical scheme of the invention is to provide a preparation method of a two-dimensional silicon carbide/silicon carbide composite material connecting piece, which is characterized in that the connecting piece is a pin and comprises the following steps:
step 1, preparing a two-dimensional silicon carbide/silicon carbide layering plate prefabricated body;
step 1.1, laminating a plurality of layers of silicon carbide cloth to the designed thickness, when the diameter of the pin is more than or equal to the designed thicknessThe design thickness is smaller than the pin diameter when the pin diameter is smaller than +.>When the design thickness is larger than the diameter xmm of the pin, the density uniformity of the final pin is improved;
step 1.2, puncturing and sewing the carbon fiber vertical to the laminated silicon carbide cloth;
Step 2, depositing BN interface layer;
placing the two-dimensional silicon carbide/silicon carbide paving plate prefabricated body prepared in the step 1 in an interface layer deposition furnace, and depositing a BN interface layer on the two-dimensional silicon carbide/silicon carbide paving plate prefabricated body to obtain a prefabricated body with the BN interface layer;
step 3, depositing a SiC matrix;
placing the preform with the BN interface layer prepared in the step 2 in a CVI deposition furnace, and depositing a silicon carbide matrix on the preform with the BN interface layer; forming a single-layer two-dimensional silicon carbide/silicon carbide composite material blank plate; the thickness of the single-layer two-dimensional silicon carbide/silicon carbide composite material blank plate is larger than 6mm;
step 4, riveting, combining and processing a blank;
step 4.1, when the diameter of the pin is smaller thanCutting the blank flat plate preform prepared in the single-layer step 3 into strips along the shape length or width direction, and then processing into a bar blank;
step 4.2, when the diameter of the pin is more than or equal toLaminating the blank flat plates prepared in the step 3 to the designed thickness, and riveting through pins of the two-dimensional silicon carbide/silicon carbide composite material with smaller specification to obtain a riveting preform; the design thickness after lamination is larger than the diameter of the pin, so that the bar blank can be conveniently processed;
step 4.3, cutting the riveting preform prepared in the step 4.2 into strips along the shape length or width direction, and then processing a bar blank;
Step 5, depositing SiC/B 4 A matrix C;
placing the bar blank prepared in the step 4 in a CVI deposition furnace, and depositing SiC/B on the bar blank 4 The matrix C can obviously prolong the thermal oxidation life of the ceramic matrix composite material;
step 6, finish machining;
finish machining the shape of the bar blank prepared in the step 5 to form a finished pin;
step 7, depositing a SiC coating;
and (3) placing the pin prepared in the step (6) in a CVI deposition furnace, and depositing a silicon carbide anti-oxidation coating on the appearance of the finished pin, wherein the deposition time is 35-40 h, the deposition temperature is 850-950 ℃, and the reaction gas is trichloromethylsilane, argon and hydrogen.
Further, in order to ensure the deposition efficiency and economy of single prefabricated plate or strip, the uniformity of the density of single plate or strip is improved, and the diameter of the pin in the step 1.1 is larger than or equal toWhen the two-dimensional silicon carbide/silicon carbide paving plate preform is in the process, the paving design thickness of the single two-dimensional silicon carbide/silicon carbide paving plate preform is more than or equal to one third of the diameter of the pin.
Further, in step 4.2, the two-dimensional silicon carbide/silicon carbide composite pin with smaller specification is prepared by a two-dimensional silicon carbide/silicon carbide composite pin preparation method in order to improve pin riveting and thermal adaptation performance.
Further, in order to enhance the high-temperature mechanical property of the pin and improve the microcrack bridging and plugging capability in a high-temperature service environment, siC/B is deposited in the step 5 4 The specific technological parameters of the matrix C are as follows: the vacuum degree of the furnace chamber before deposition is required to be less than 500Pa, the deposition temperature is 850-950 ℃, trichloromethylsilane, methane, boron trichloride gas and hydrogen are used as deposition gas and catalytic carrier, the gas flow is 0.1-0.6L/min, argon with the gas flow rate of 0.5-1L/min is used as reaction protection gas, and the deposition time is 60-80 h.
Furthermore, in order to meet the use requirements under the conditions of ultrahigh temperature and long service life, the high-temperature oxidation stress environment can be resisted for a long time, the deposition temperature is 900 ℃, the gas flow is 0.3L/min, 0.7L/min of argon is used as reaction protection gas, and the deposition time is 65h.
Further, the specific process parameters of the BN interface layer deposited in the step 2 are as follows: the vacuum degree of the furnace chamber before deposition is required to be less than 300Pa, the deposition temperature is 620-670 ℃, ammonia gas, boron trichloride gas and hydrogen gas are used as deposition gas and catalytic carrier, the gas flow is 0.1-0.6L/min, argon gas with the auxiliary concentration of 0.2-0.3L/min is used as reaction shielding gas, and the deposition time is 35-40 h.
Further, the specific process parameters of the step 3 of depositing the SiC matrix are as follows: the deposition temperature is 800-1000 ℃, the vacuum degree is required to be less than 1000Pa, 0.2L/min-0.5L/min argon is used as reaction shielding gas, and the flow rate is 0.15L/min-0.4L/min H 2 As carrier gas, the trichloromethyl silane is sent into a deposition furnace to react with hydrogen, and the deposition time is 40-60 h.
Further, in order to improve the deposition efficiency and economy and ensure the uniformity of the pin density, the diameter size of the pin of the smaller-specification two-dimensional silicon carbide/silicon carbide composite material for riveting is not larger than
Further, in order to achieve the mechanical property and deposition uniformity of the finished product pin, the pin positions of the small-specification two-dimensional silicon carbide/silicon carbide composite material for riveting are as follows: the pin holes are uniformly distributed along the length direction of the bar, and the distance between the pin holes is not less than 8mm.
Further, in the step 1.2, the T300-3K carbon fiber is used for puncture sewing perpendicular to the silicon carbide cloth, and metal tooling is used for assisting in flattening before sewing, so that the silicon carbide cloth is ensured to have no folds; in step 1.1 x is equal to 1.
The invention also provides a preparation method of the two-dimensional silicon carbide/silicon carbide composite material bar stock, which is characterized by comprising the following steps:
step 1, preparing a two-dimensional silicon carbide/silicon carbide layering plate prefabricated body;
Step 1.1, laminating a plurality of layers of silicon carbide cloth to a designed thickness, when the diameter of a bar is more than or equal to the design thicknessWhen the design thickness of the plate is smaller than the diameter of the bar stock; when the diameter of the bar is less than->When the thickness of the plate is larger than the diameter of the bar material by xmm, the density uniformity of the final bar material can be improved conveniently;
step 1.2, puncturing and sewing the carbon fiber vertical to the laminated silicon carbide cloth;
step 2, depositing BN interface layer;
placing the two-dimensional silicon carbide/silicon carbide paving plate prefabricated body prepared in the step 1 in an interface layer deposition furnace, and depositing a BN interface layer on the two-dimensional silicon carbide/silicon carbide paving plate prefabricated body to obtain a prefabricated body with the BN interface layer;
step 3, depositing a SiC matrix;
placing the preform with the BN interface layer prepared in the step 2 in a CVI deposition furnace, and depositing a silicon carbide matrix on the preform with the BN interface layer; forming a single-layer two-dimensional silicon carbide/silicon carbide composite material blank plate; the thickness of the single-layer two-dimensional silicon carbide/silicon carbide composite material blank plate is larger than 6mm;
step 4, riveting, combining and processing a blank;
step 4.1, when the diameter of the bar is smaller thanCutting the blank flat plate preform prepared in the single-layer step 3 along the shape length or width direction to prepare a strip material, and then preparing a bar blank;
Step 4.2, when the diameter of the bar is greater than or equal toLaminating the blank flat plates prepared in the step 3 to the designed thickness, and riveting through pins of a two-dimensional silicon carbide/silicon carbide composite material with smaller specification to obtain a riveting preform; the design thickness is larger than the diameter of the bar stock, so that the bar stock is convenient to process;
step 4.3, cutting the riveting preform prepared in the step 4.2 into strips along the shape length or width direction, and then processing a bar blank;
step 5, depositing SiC/B 4 C baseA body;
placing the bar blank prepared in the step 4 in a CVI deposition furnace, and depositing SiC/B on the bar blank 4 The matrix C can obviously prolong the thermal oxidation life of the ceramic matrix composite material;
step 6, finish machining;
and (5) finishing the shape of the bar blank prepared in the step (5) to form a target bar.
Further, in order to ensure the deposition efficiency and economy of single prefabricated plate or strip, the uniformity of the density of single plate or strip is improved, and the diameter of the bar is equal to or larger than that of the step 1.1When the thickness of the single preform lay-up design is more than or equal to one third of the diameter of the bar.
Further, in order to enhance the capability of plugging microcracks in a high-temperature service environment, the two-dimensional silicon carbide/silicon carbide composite pin with smaller specification is prepared by the same preparation method as that of the two-dimensional silicon carbide/silicon carbide composite bar.
Further, in order to meet the use requirements under the conditions of ultra-high temperature and long service life, the method can resist the high-temperature oxidation stress environment for a long time, and the step 5 is to deposit SiC/B 4 The specific technological parameters of the matrix C are as follows: the vacuum degree of the furnace chamber before deposition is required to be less than 500Pa, the deposition temperature is 850-950 ℃, trichloromethylsilane, methane, boron trichloride gas and hydrogen are used as deposition gas and catalytic carrier, the gas flow is 0.1-0.6L/min, argon with the gas flow rate of 0.5-1L/min is used as reaction protection gas, and the deposition time is 60-80 h.
Furthermore, in order to quickly react with the oxidation medium to generate a glass sealing phase when the oxidation medium invades, the multi-layer sealing and anti-line of the fiber, the interface and the matrix is realized, the long-life self-healing is better realized, the deposition temperature is 900 ℃, the gas flow is 0.3L/min, the argon gas of 0.7L/min is used as the reaction protective gas, and the deposition time is 65h.
Further, the specific process parameters of the BN interface layer deposited in the step 2 are as follows: the vacuum degree of the furnace chamber before deposition is required to be less than 300Pa, the deposition temperature is 620-670 ℃, ammonia gas, boron trichloride gas and hydrogen gas are used as deposition gas and catalytic carrier, the gas flow is 0.1-0.6L/min, argon gas with the auxiliary concentration of 0.2-0.3L/min is used as reaction shielding gas, and the deposition time is 35-40 h.
Further, the specific process parameters of the step 3 of depositing the SiC matrix are as follows: the deposition temperature is 800-1000 ℃, the vacuum degree is required to be less than 1000Pa, 0.2L/min-0.5L/min argon is used as reaction shielding gas, and the flow rate is 0.15L/min-0.4L/min H 2 As carrier gas, the trichloromethyl silane is sent into a deposition furnace to react with hydrogen, and the deposition time is 40-60 h.
Further, in order to improve the deposition efficiency and economy and ensure the density uniformity of the bar, the diameter size of the two-dimensional silicon carbide/silicon carbide composite material pin for riveting is not larger than
Further, in order to achieve the mechanical property and deposition uniformity of the finished bar, the two-dimensional silicon carbide/silicon carbide composite pin positions are as follows: the pin holes are uniformly distributed along the length direction of the bar, and the distance between the pin holes is not less than 8mm.
Further, in the step 1.2, the T300-3K carbon fiber is used for puncture sewing perpendicular to the silicon carbide cloth, and metal tooling is used for assisting in flattening before sewing, so that the silicon carbide cloth is ensured to have no folds; in step 1.1 x is equal to 1.
The invention also provides a preparation method of the two-dimensional silicon carbide/silicon carbide composite material connecting piece, which is characterized in that the connecting piece is a bolt and comprises the following steps:
step 1, preparing a two-dimensional silicon carbide/silicon carbide layering plate prefabricated body;
Step 1.1, laminating a plurality of layers of silicon carbide cloth to the designed thickness, when the diameter of the bolt is more than or equal to the designed thicknessWhen the thickness is designed to be smaller than the diameter of the bolt, the density uniformity of the final bar is convenient to improve, and when the diameter of the bolt is smaller than that of the bolt/>When the thickness is designed to be at least xmm larger than the diameter of the bolt;
step 1.2, puncturing and sewing the carbon fiber vertical to the laminated silicon carbide cloth;
step 2, depositing BN interface layer;
placing the two-dimensional silicon carbide/silicon carbide paving plate prefabricated body prepared in the step 1 in an interface layer deposition furnace, and depositing a BN interface layer on the two-dimensional silicon carbide/silicon carbide paving plate prefabricated body to obtain a prefabricated body with the BN interface layer;
step 3, depositing a SiC matrix;
placing the preform with the BN interface layer prepared in the step 2 in a CVI deposition furnace, and depositing a silicon carbide matrix on the preform with the BN interface layer; forming a single-layer two-dimensional silicon carbide/silicon carbide composite material blank plate; the thickness of the single-layer two-dimensional silicon carbide/silicon carbide composite material blank plate is larger than 6mm;
step 4, riveting, combining and processing a blank;
step 4.1, when the diameter of the bolt is smaller thanCutting the blank flat plate preform prepared in the single-layer step 3 along the shape length or width direction to prepare a strip material, and then preparing a bar blank;
Step 4.2, when the diameter of the bolt is larger than or equal toLaminating the blank flat plates prepared in the step 3 to the designed thickness, and riveting through pins of a two-dimensional silicon carbide/silicon carbide composite material with smaller specification to obtain a riveting preform; the design thickness is larger than the diameter of the bolt, so that bar stock can be conveniently processed;
step 4.3, cutting the preform prepared in the step 4.2 into strips along the shape length or width direction, and then processing a blank of the bar;
step 5, depositing SiC/B 4 A matrix C;
placing the bar blank prepared in the step 4 in a CVI deposition furnace, and depositing SiC/B on the bar blank 4 The matrix C can obviously prolong the thermal oxidation life of the ceramic matrix composite material;
step 6, finish machining;
finish machining the shape of the bar blank prepared in the step 5 to form a finished bolt;
step 7, depositing a SiC coating;
and (3) placing the finished bolt prepared in the step (6) in a CVI deposition furnace, and depositing a silicon carbide anti-oxidation coating on the appearance of the finished bolt after finish machining, wherein the deposition time is 35-40 h, the deposition temperature is 850-950 ℃, and the reaction gas is trichloromethylsilane, argon and hydrogen.
Further, in order to ensure the deposition efficiency and economy of single preform plates or strips, the uniformity of the density of single preform plates or strips is improved, and the diameter of the bolts in the step 1.1 is equal to or larger than that of the bolts When the thickness of the single prefabricated body paving plate is more than or equal to one third of the diameter of the bar.
Further, in order to improve the high-temperature mechanical property of the pin, the micro-crack bridging and blocking under the high-temperature oxidation environment is satisfied, namely self-healing is realized, and SiC/B is deposited in the step 5 4 The specific technological parameters of the matrix C are as follows: the vacuum degree of the furnace chamber before deposition is required to be less than 500Pa, the deposition temperature is 850-950 ℃, trichloromethylsilane, methane, boron trichloride gas and hydrogen are used as deposition gas and catalytic carrier, the gas flow is 0.1-0.6L/min, argon with the gas flow rate of 0.5-1L/min is used as reaction shielding gas, and the deposition time is 60-80 h.
Furthermore, in order to meet the use requirements under the conditions of ultrahigh temperature and long service life, the high-temperature oxidation stress environment can be resisted for a long time, the deposition temperature is 900 ℃, the gas flow is 0.3L/min, 0.7L/min of argon is used as reaction protection gas, and the deposition time is 65h.
Further, the specific process parameters of the BN interface layer deposited in the step 2 are as follows: the vacuum degree of the furnace chamber before deposition is required to be less than 300Pa, the deposition temperature is 620-670 ℃, ammonia gas, boron trichloride gas and hydrogen gas are used as deposition gas and catalytic carrier, the gas flow is 0.1-0.6L/min, argon gas with the auxiliary concentration of 0.2-0.3L/min is used as reaction shielding gas, and the deposition time is 35-40 h.
Further, the specific process parameters of the step 3 of depositing the SiC matrix are as follows: the deposition temperature is 800-1000 ℃, the vacuum degree is required to be less than 1000Pa, 0.2L/min-0.5L/min argon is used as reaction shielding gas, and the flow rate is 0.15L/min-0.4L/min H 2 As carrier gas, the trichloromethyl silane is sent into a deposition furnace to react with hydrogen, and the deposition time is 40-60 h.
Further, in order to improve the deposition efficiency and the economy and ensure the uniformity of the density of the bolts, the diameter size of the two-dimensional silicon carbide/silicon carbide composite pin is not more than
Further, in order to achieve the mechanical property and deposition uniformity of the finished bolt, the two-dimensional silicon carbide/silicon carbide composite material pin positions are as follows: the bolts are uniformly distributed along the length direction, the distance between the pin holes is not less than 8mm, and the riveting part can be close to or arranged at the position of the nut mounting stirrup when the performance of the bolts is further improved.
Further, in the step 1.2, the T300-3K carbon fiber is used for puncture sewing perpendicular to the silicon carbide cloth, and metal tooling is used for assisting in flattening before sewing, so that the silicon carbide cloth is ensured to have no folds.
The beneficial effects of the invention are as follows:
1. the blank of the bar stock has high density uniformity and high shearing strength of the bolt;
the preform of the processed bar blank is a single-layer two-dimensional silicon carbide/silicon carbide composite material blank flat plate or is formed by riveting a plurality of layers of two-dimensional silicon carbide/silicon carbide composite material blank flat plates, and the thickness of the single-layer two-dimensional silicon carbide/silicon carbide composite material blank flat plate is between 3 and 6mm, so that the density of each part can be kept consistent when a SiC matrix is deposited, and the obtained composite with uniform density can be finally ensured after riveting A composite blank plate; the composite material pins prepared by the same processing procedure are adopted to rivet a plurality of layers of two-dimensional silicon carbide/silicon carbide composite material blank plates with uniform density in a combined manner, compared with a three-dimensional needling blank, the density uniformity of the blank is improved, and no obvious density gradient exists along the radial direction of the bolt or the pin; meanwhile, the invention adopts SiC/B in the deposition process of the bar blank 4 The matrix C can further improve the density uniformity of the bar blank; compared with the existing preparation method of the carbon/silicon carbide composite bolt, the shear strength of the bolt is obviously improved to 240-320 Mpa after the preparation method of the silicon carbide/silicon carbide composite bolt is adopted.
2. The invention has short production period and is suitable for industrial production;
compared with the prior art, the single-layer two-dimensional silicon carbide/silicon carbide composite material blank plate has the advantages that the thickness of the blank plate is thin, when a silicon carbide matrix is deposited by utilizing a chemical vapor deposition method, the densification period is shortened, the blank plate is riveted in a combined way, the bolt blank deposition period is obviously shortened, the production cost is reduced, the technical difficulty of weaving the thick-size three-dimensional preform body by the silicon carbide fiber is solved, and the method is suitable for industrial application.
3. The silicon carbide/silicon carbide composite material pin adopted by the invention realizes the riveting of blank flat plates, and the size specification of the pin is less than or equal toThe riveting position can be adjusted according to the nut mounting position, so that the riveting position is close to or arranged at the nut mounting stirrup position, and the tensile strength of the bolt can be improved more specifically;
4. compared with the prior art of preparing ceramic matrix composite bolts by CVI, micropores are difficult to avoid in the deposition generating process of the material matrix prepared by adopting the conventional CVI, and the open porosity of the surface of the ceramic matrix composite prepared by adopting the conventional CVI is 10-15%, and the SiC/B adopted in the bolt deposition process is provided by the invention 4 The matrix C can obviously prolong the thermal oxidation life of the ceramic matrix composite material, mainly utilizes BC, siB, si-B-C and other self-healing components to react with corrosive oxidation medium in the environment rapidly,generation of B 2 O 3 、SiO 2 、B 2 O 3 +SiO 2 And the glass sealing phase and a small amount of high-viscosity liquid phase consume and invade the oxidizing medium on site to seal microcracks and holes of the material, prevent the corrosive oxidizing medium from entering the inside of the material, and realize long-life self-healing.
Drawings
FIG. 1 is a flow chart of a method of making the present invention;
FIG. 2 is a schematic diagram of a two-dimensional silicon carbide/silicon carbide blanket sheet preform structure;
FIG. 3 is a schematic illustration of a multi-layer two-dimensional silicon carbide/silicon carbide composite blank plate rivet joint;
FIG. 4 is a diagram of an M8 bolt embodiment prepared by the method of the present invention;
fig. 5 is an SEM photograph of the thread profile of an M8 bolt prepared by the method of the present invention.
Detailed Description
So that the manner in which the above recited objects, features and advantages of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments, some of which are illustrated in the appended drawings. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present invention is not limited to the specific embodiments disclosed below.
Further, reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic can be included in at least one implementation of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments.
Further, the present invention will be described in detail with reference to the drawings, which are only examples for convenience of illustration, and should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
Example 1
With reference to FIG. 1, this example prepares a two-dimensional silicon carbide/silicon carbide composite material by the following steps 1-6Bar stock with which various connectors, such as pins in this example and bolts in example 2, can be machined, although other connectors can be machined:
step 1, preparing a two-dimensional silicon carbide/silicon carbide layering plate prefabricated body;
the multi-layer silicon carbide cloth is laminated to the design thickness, as shown in fig. 2, the design thickness is equal to one third of the diameter of a bolt, a machining allowance of 1mm is reserved in the thickness, T300-3K carbon fibers are used for puncture sewing perpendicular to the silicon carbide cloth, and a metal flat plate tool is used for assisting flattening before sewing, so that the silicon carbide cloth is ensured to have no wrinkles. In this embodiment, the laying angle of each layer of silicon carbide cloth is not particularly limited, and may be, for example, 0 °/90 ° normal laying, or 0 ° or less than 90 ° oblique laying, or may be any of normal laying and oblique laying. In other embodiments, if a two-dimensional silicon carbide/silicon carbide composite is prepared The design thickness can be designed to be 6mm.
Step 2, depositing BN interface layer;
depositing a BN interface layer on the two-dimensional silicon carbide/silicon carbide paving plate preform by an interface layer deposition furnace, wherein the vacuum degree of a furnace chamber before deposition is 270Pa, the deposition temperature is 630 ℃, ammonia gas, boron trichloride gas and hydrogen gas are used as deposition gases and catalytic carriers, the gas flow is 0.25L/min, argon gas with the concentration of 0.25L/min is used as reaction shielding gas, and the deposition time is 35h, so that the plate-shaped or strip-shaped preform with the BN interface layer is obtained. In other embodiments, the deposition process parameters may satisfy the following conditions: the vacuum degree of the furnace chamber before deposition is required to be less than 300Pa, the deposition temperature is 620-670 ℃, ammonia gas, boron trichloride gas and hydrogen gas are used as deposition gas and catalytic carrier, the gas flow is 0.1-0.6L/min, argon gas with the auxiliary concentration of 0.2-0.3L/min is used as reaction shielding gas, and the deposition time is 35-40 h.
Step 3, depositing a SiC matrix;
depositing a silicon carbide matrix on the prefabricated body prepared in the step 2 by a CVI deposition furnace, wherein the deposition temperature is 850 ℃, the vacuum degree is less than 950Pa, 0.35L/min of argon is used as a reaction shielding gas, and the flow rate is 0.4L/min of H 2 As carrier gas, the trichloromethyl silane is sent into a deposition furnace to react with hydrogen for 40 hours, and a silicon carbide matrix is generated. In other embodiments, the deposition process parameters satisfy the following conditions: the deposition temperature is 800-1000 ℃, the vacuum degree is required to be less than 1000Pa, 0.2L/min-0.5L/min argon is used as reaction shielding gas, and the flow rate is 0.15L/min-0.4L/min H 2 As carrier gas, the trichloromethyl silane is sent into a deposition furnace to react with hydrogen, and the deposition time is 40-60 h.
Step 4, riveting, combining and processing a blank;
laminating the blank flat plates prepared in the step 3 to the designed thickness, and then riveting by using two-dimensional silicon carbide/silicon carbide composite material pins, wherein the diameter and the size of the pins are as shown in fig. 3The design thickness should be greater than the diameter of the product pin. And processing a bar blank on the prefabricated body plate or bar along the length or width direction of the profile. In other embodiments, if a two-dimensional silicon carbide/silicon carbide composite is prepared +.>The blank flat plate preform prepared in the single-layer step 3 is directly cut into strips along the length or width direction, and then is processed into a bar blank.
The two-dimensional silicon carbide/silicon carbide composite pin is preferably a pin prepared by the two-dimensional silicon carbide/silicon carbide composite pin preparation method, and the silicon carbide/silicon carbide composite pin prepared by other methods can be adopted in other embodiments.
Step 5, depositing SiC/B 4 A matrix C;
depositing SiC/B on a bar blank by a CVI deposition furnace 4 And C, the vacuum degree of a furnace chamber before deposition is less than 500Pa, the deposition temperature is 900 ℃, trichloromethylsilane, methane, boron trichloride gas and hydrogen are used as deposition gases and catalytic carriers, the gas flow is 0.3L/min, argon with the concentration of 0.7L/min is used as reaction shielding gas, and the deposition time is 65h. In other embodiments, the following process parameters may be satisfied: the vacuum degree of the furnace chamber before deposition is required to be less than 500Pa, the deposition temperature is 850-950 ℃, trichloromethylsilane, methane, boron trichloride gas and hydrogen are used as deposition gas and catalytic carrier, the gas flow is 0.1-0.6L/min, argon with the gas flow rate of 0.5-1L/min is used as reaction protection gas, and the deposition time is 60-80 h.
Step 6, finish machining;
and (3) finishing the bar blank through a numerical control lathe to form a target bar, and if the target product is a pin, finishing the bar blank through the numerical control lathe to form a target pin, and executing the step (7).
Step 7, depositing a SiC coating;
and (3) placing the pin prepared in the step (6) in a CVI deposition furnace, and depositing a silicon carbide anti-oxidation coating on the appearance of the finished pin, wherein the deposition time is 35-40 h, the deposition temperature is 850-950 ℃, and the reaction gas is trichloromethylsilane, argon and hydrogen.
The two-dimensional silicon carbide/silicon carbide composite material prepared in this examplePin, subjected to shear strength test at room temperature, +.>Pin shear Strength312.3MPa。
Example 2
With reference to FIG. 1, this example prepares a two-dimensional silicon carbide/silicon carbide composite material by the following stepsAnd (3) a bolt:
step 1, preparing a two-dimensional silicon carbide/silicon carbide layering plate prefabricated body;
the multi-layer silicon carbide cloth is laminated to the design thickness, as shown in fig. 2, the design thickness is equal to one third of the diameter of a bolt, a machining allowance of 1mm is reserved in the thickness, T300-3K carbon fibers are used for puncture sewing perpendicular to the silicon carbide cloth, and a metal flat plate tool is used for assisting flattening before sewing, so that the silicon carbide cloth is ensured to have no wrinkles. In this embodiment, the laying angle of each layer of silicon carbide cloth is not particularly limited, and may be, for example, 0 °/90 ° normal laying, or 0 ° or less than 90 ° oblique laying, or may be any of normal laying and oblique laying. In other embodiments, if a two-dimensional silicon carbide/silicon carbide composite is prepared The design thickness may be designed to be 7mm.
Step 2, depositing BN interface layer;
depositing a BN interface layer on the two-dimensional silicon carbide/silicon carbide paving plate preform by an interface layer deposition furnace, wherein the vacuum degree of a furnace chamber before deposition is 270Pa, the deposition temperature is 630 ℃, ammonia gas, boron trichloride gas and hydrogen gas are used as deposition gases and catalytic carriers, the gas flow is 0.25L/min, argon gas with the concentration of 0.25L/min is used as reaction shielding gas, and the deposition time is 35h, so that the plate-shaped or strip-shaped preform with the BN interface layer is obtained. In other embodiments, the deposition process parameters may satisfy the following conditions: the vacuum degree of the furnace chamber before deposition is required to be less than 300Pa, the deposition temperature is 620-670 ℃, ammonia gas, boron trichloride gas and hydrogen gas are used as deposition gas and catalytic carrier, the gas flow is 0.1-0.6L/min, argon gas with the auxiliary concentration of 0.2-0.3L/min is used as reaction shielding gas, and the deposition time is 35-40 h.
Step 3, depositing a SiC matrix;
depositing a silicon carbide matrix on the prefabricated body prepared in the step 2 by a CVI deposition furnace, wherein the deposition temperature is 850 ℃, the vacuum degree is less than 950Pa, 0.35L/min of argon is used as a reaction shielding gas, and the flow rate is 0.4L/min of H 2 As carrier gas, the trichloromethyl silane is sent into a deposition furnace to react with hydrogen for 40 hours, and a silicon carbide matrix is generated. In other embodiments, the deposition process parameters satisfy the following conditions: the deposition temperature is 800-1000 ℃, the vacuum degree is required to be less than 1000Pa, 0.2L/min-0.5L/min argon is used as reaction shielding gas, and the flow rate is 0.15L/min-0.4L/min H 2 As carrier gas, the trichloromethyl silane is sent into a deposition furnace to react with hydrogen, and the deposition time is 40-60 h.
Step 4, riveting, combining and processing a blank;
laminating the blank flat plates prepared in the step 3 to the designed thickness, and then riveting by using two-dimensional silicon carbide/silicon carbide composite material pins, wherein the diameter and the size of the pins are as shown in fig. 3The design thickness should be greater than the diameter of the product bolt. And processing a bar blank on the prefabricated body plate or bar along the length or width direction of the profile. In other embodiments, if a two-dimensional silicon carbide/silicon carbide composite is prepared +.>The blank flat plate preform prepared in the single-layer step 3 is directly cut into strips along the length or width direction, and then is processed into a bar blank.
The two-dimensional silicon carbide/silicon carbide composite pin is preferably a pin prepared in example 1, but in other examples a silicon carbide/silicon carbide composite pin prepared in other ways may be used.
Step 5, depositing SiC/B 4 A matrix C;
depositing SiC/B on a bar blank by a CVI deposition furnace 4 C matrix, wherein the vacuum degree of the furnace chamber before deposition is less than 500Pa, the deposition temperature is 900 ℃, and the matrix is prepared by trichloromethyl siliconAlkane, methane, boron trichloride gas and hydrogen are used as deposition gas and catalytic carrier, the gas flow is 0.3L/min, 0.7L/min of argon is used as reaction shielding gas, and the deposition time is 65h. In other embodiments, the following process parameters may be satisfied: the vacuum degree of the furnace chamber before deposition is required to be less than 500Pa, the deposition temperature is 850-950 ℃, trichloromethylsilane, methane, boron trichloride gas and hydrogen are used as deposition gas and catalytic carrier, the gas flow is 0.1-0.6L/min, argon with the gas flow rate of 0.5-1L/min is used as reaction protection gas, and the deposition time is 60-80 h.
Step 6, finish machining;
and (3) finishing the screw shape of the bar blank by a numerical control lathe and turning the screw by using a special diamond thread piece cutter.
Step 7, depositing a SiC coating;
and (3) depositing a silicon carbide anti-oxidation coating on the appearance of the finished bolt by using a CVI (chemical vapor deposition) furnace, wherein the deposition time is 40 hours, the deposition temperature is 920 ℃, and the reaction gases are trichloromethylsilane, argon and hydrogen. Finally, the two-dimensional silicon carbide/silicon carbide composite bolt is formed. In other embodiments, the following process parameters may be satisfied: the deposition time is 35-40 h, and the deposition temperature is 850-950 ℃.
As shown in fig. 4 and 5, the two-dimensional silicon carbide/silicon carbide composite bolt prepared in this example has a thread profile which is complete and meets the requirements when the thread profile is observed under a Scanning Electron Microscope (SEM), and the tensile strength of the M8 bolt is 196.4MPa after a tensile strength test at room temperature.
Claims (21)
1. The preparation method of the two-dimensional silicon carbide/silicon carbide composite material connecting piece is characterized in that the connecting piece is a pin and comprises the following steps:
step 1, preparing a two-dimensional silicon carbide/silicon carbide layering plate prefabricated body;
step 1.1, laminating a plurality of layers of silicon carbide cloth to a design thickness, wherein the diameter of a pin is larger than or equal to phi 6mm, and the design thickness is smaller than the diameter of the pin;
Step 1.2, puncturing and sewing the carbon fiber vertical to the laminated silicon carbide cloth;
step 2, depositing BN interface layer;
placing the two-dimensional silicon carbide/silicon carbide paving plate prefabricated body prepared in the step 1 in an interface layer deposition furnace, and depositing a BN interface layer on the two-dimensional silicon carbide/silicon carbide paving plate prefabricated body to obtain a prefabricated body with the BN interface layer;
step 3, depositing a SiC matrix;
placing the preform with the BN interface layer prepared in the step 2 in a CVI deposition furnace, and depositing a silicon carbide matrix on the preform with the BN interface layer; forming a single-layer two-dimensional silicon carbide/silicon carbide composite material blank plate; the thickness of the single-layer two-dimensional silicon carbide/silicon carbide composite material blank plate is larger than 6mm;
step 4, riveting, combining and processing a blank;
laminating the blank flat plates prepared in the step 3 to the designed thickness, and riveting through pins of a two-dimensional silicon carbide/silicon carbide composite material with smaller specification to obtain a riveting preform; the design thickness is larger than the diameter of the pin; the smaller-sized two-dimensional silicon carbide/silicon carbide composite pin is prepared by a two-dimensional silicon carbide/silicon carbide composite pin preparation method; cutting the riveting preform into strips along the shape length or width direction of the riveting preform, and then processing a bar blank;
Step 5, depositing SiC/B 4 A matrix C;
placing the bar blank prepared in the step 4 in a CVI deposition furnace, and depositing SiC/B on the bar blank 4 A matrix C;
step 6, finish machining;
finish machining the shape of the bar blank prepared in the step 5 to form a finished pin;
step 7, depositing a SiC coating;
and (3) placing the pin prepared in the step (6) in a CVI deposition furnace, and depositing a silicon carbide anti-oxidation coating on the appearance of the finished pin after finish machining, wherein the deposition time is 35-40 h, the deposition temperature is 850-950 ℃, and the reaction gas is trichloromethylsilane, argon and hydrogen.
2. The method for preparing a two-dimensional silicon carbide/silicon carbide composite material connector according to claim 1, wherein: in step 1.1, the design thickness is greater than or equal to one third of the pin diameter.
3. The method of producing a two-dimensional silicon carbide/silicon carbide composite material joint according to claim 1 or 2, wherein: step 5 deposition of SiC/B 4 The specific technological parameters of the matrix C are as follows: the vacuum degree of the furnace chamber before deposition is required to be less than 500Pa, the deposition temperature is 850-950 ℃, trichloromethylsilane, methane, boron trichloride gas and hydrogen are used as deposition gas and catalytic carrier, the gas flow is 0.1-0.6L/min, argon with the gas flow rate of 0.5-1L/min is used as reaction shielding gas, and the deposition time is 60-80 h.
4. A method of making a two-dimensional silicon carbide/silicon carbide composite material joint according to claim 3 wherein: the deposition temperature is 900 ℃, the gas flow is 0.3L/min, 0.7L/min of argon is used as reaction shielding gas, and the deposition time is 65h.
5. A method of making a two-dimensional silicon carbide/silicon carbide composite material joint according to claim 3 wherein: the specific technological parameters of the BN interface layer deposition in the step 2 are as follows: the vacuum degree of the furnace chamber before deposition is required to be less than 300Pa, the deposition temperature is 620-670 ℃, ammonia gas, boron trichloride gas and hydrogen gas are used as deposition gas and catalytic carriers, the gas flow is 0.1-0.6L/min, argon gas with the concentration of 0.2-0.3L/min is used as reaction shielding gas, and the deposition time is 35-40 h.
6. The method for preparing a two-dimensional silicon carbide/silicon carbide composite material connector according to claim 5, wherein: the specific process parameters of the step 3 of depositing the SiC matrix are as follows: the deposition temperature is 800-1000 ℃, the vacuum degree is required to be less than 1000Pa, 0.2L/min-0.5L/min argon is used as reaction shielding gas, and the flow rate of H is 0.15L/min-0.4L/min 2 As carrier gas, the trichloromethyl silane is sent into a deposition furnace to react with hydrogen, and the deposition time is 40-60 h.
7. The method of making a two-dimensional silicon carbide/silicon carbide composite material joint according to claim 6, wherein: the positions of the two-dimensional silicon carbide/silicon carbide composite material pins with smaller specification are uniformly distributed along the length direction of the bar, and the distance between riveting pin holes is not less than 8mm.
8. The preparation method of the two-dimensional silicon carbide/silicon carbide composite bar is characterized by comprising the following steps of:
step 1, preparing a two-dimensional silicon carbide/silicon carbide layering plate prefabricated body;
step 1.1, laminating a plurality of layers of silicon carbide cloth to a designed thickness, wherein the diameter of a bar is larger than 6mm, and the designed thickness is smaller than the diameter of the bar;
step 1.2, puncturing and sewing the carbon fiber vertical to the laminated silicon carbide cloth;
step 2, depositing BN interface layer;
placing the two-dimensional silicon carbide/silicon carbide paving plate prefabricated body prepared in the step 1 in an interface layer deposition furnace, and depositing a BN interface layer on the two-dimensional silicon carbide/silicon carbide paving plate prefabricated body to obtain a prefabricated body with the BN interface layer;
step 3, depositing a SiC matrix;
placing the preform with the BN interface layer prepared in the step 2 in a CVI deposition furnace, and depositing a silicon carbide matrix on the preform with the BN interface layer; forming a single-layer two-dimensional silicon carbide/silicon carbide composite material blank plate; the thickness of the single-layer two-dimensional silicon carbide/silicon carbide composite material blank plate is larger than 6mm;
Step 4, riveting, combining and processing a blank;
laminating the blank flat plates prepared in the step 3 to the designed thickness, and riveting through pins of a two-dimensional silicon carbide/silicon carbide composite material with smaller specification to obtain a riveting preform; the design thickness is larger than the diameter of the bar stock; the smaller gauge two-dimensional silicon carbide/silicon carbide composite pin made by the method of any one of claims 1 or 7; cutting the riveting preform into strips along the shape length or width direction of the riveting preform, and then processing a bar blank;
step 5, depositing SiC/B 4 A matrix C;
placing the bar blank prepared in the step 4 in a CVI deposition furnace, and depositing SiC/B on the bar blank 4 A matrix C;
step 6, finish machining;
and (5) finishing the shape of the bar blank prepared in the step (5) to form a target bar.
9. The method of preparing a two-dimensional silicon carbide/silicon carbide composite material ingot according to claim 8, wherein in step 1.1, the design thickness is equal to or greater than one third of the diameter of the ingot.
10. The method of preparing a two-dimensional silicon carbide/silicon carbide composite material rod according to claim 9 wherein step 5 deposits SiC/B 4 The specific technological parameters of the matrix C are as follows: the vacuum degree of the furnace chamber before deposition is required to be less than 500Pa, the deposition temperature is 850-950 ℃, trichloromethylsilane, methane, boron trichloride gas and hydrogen are used as deposition gas and catalytic carrier, the gas flow is 0.1-0.6L/min, argon with the gas flow rate of 0.5-1L/min is used as reaction shielding gas, and the deposition time is 60-80 h.
11. The method for preparing a two-dimensional silicon carbide/silicon carbide composite material bar according to claim 10, wherein: the deposition temperature is 900 ℃, the gas flow is 0.3L/min, 0.7L/min of argon is used as reaction shielding gas, and the deposition time is 65h.
12. The method for preparing a two-dimensional silicon carbide/silicon carbide composite material bar according to claim 11, wherein: the specific technological parameters of the BN interface layer deposition in the step 2 are as follows: the vacuum degree of the furnace chamber before deposition is required to be less than 300Pa, the deposition temperature is 620-670 ℃, ammonia gas, boron trichloride gas and hydrogen gas are used as deposition gas and catalytic carriers, the gas flow is 0.1-0.6L/min, argon gas with the concentration of 0.2-0.3L/min is used as reaction shielding gas, and the deposition time is 35-40 h.
13. According to the weightsThe method for preparing the two-dimensional silicon carbide/silicon carbide composite material bar according to claim 12, wherein the method comprises the following steps: the specific process parameters of the step 3 of depositing the SiC matrix are as follows: the deposition temperature is 800-1000 ℃, the vacuum degree is required to be less than 1000Pa, 0.2L/min-0.5L/min argon is used as reaction shielding gas, and the flow rate of H is 0.15L/min-0.4L/min 2 As carrier gas, the trichloromethyl silane is sent into a deposition furnace to react with hydrogen, and the deposition time is 40-60 h.
14. The method for preparing a two-dimensional silicon carbide/silicon carbide composite material rod according to claim 13, wherein: the two-dimensional silicon carbide/silicon carbide composite pin positions of the riveted silicon carbide/silicon carbide composite flat plate are: the pin holes are uniformly distributed along the length direction of the bar, and the distance between the pin holes is not less than 8mm.
15. The preparation method of the two-dimensional silicon carbide/silicon carbide composite material connecting piece is characterized in that the connecting piece is a bolt and comprises the following steps:
step 1, preparing a two-dimensional silicon carbide/silicon carbide layering plate prefabricated body;
step 1.1, laminating a plurality of layers of silicon carbide cloth to a design thickness: the diameter of the bolt is larger than or equal to phi 6mm, and the design thickness is smaller than the diameter of the bolt;
step 1.2, puncturing and sewing the carbon fiber vertical to the laminated silicon carbide cloth;
step 2, depositing BN interface layer;
placing the two-dimensional silicon carbide/silicon carbide paving plate prefabricated body prepared in the step 1 in an interface layer deposition furnace, and depositing a BN interface layer on the two-dimensional silicon carbide/silicon carbide paving plate prefabricated body to obtain a prefabricated body with the BN interface layer;
step 3, depositing a SiC matrix;
placing the preform with the BN interface layer prepared in the step 2 in a CVI deposition furnace, and depositing a silicon carbide matrix on the preform with the BN interface layer; forming a single-layer two-dimensional silicon carbide/silicon carbide composite material blank plate; the thickness of the single-layer two-dimensional silicon carbide/silicon carbide composite material blank plate is larger than 6mm;
Step 4, riveting, combining and processing a blank;
laminating the blank flat plates prepared in the step 3 to the designed thickness, and riveting through pins of a two-dimensional silicon carbide/silicon carbide composite material with smaller specification to obtain a riveting preform; the design thickness of the blank flat plate is larger than the diameter of the bolt; the smaller-sized two-dimensional silicon carbide/silicon carbide composite pin is prepared by a two-dimensional silicon carbide/silicon carbide composite pin preparation method; cutting the riveting preform into strips along the shape length or width direction of the riveting preform, and then processing a bar blank;
step 5, depositing SiC/B 4 A matrix C;
placing the bar blank prepared in the step 4 in a CVI deposition furnace, and depositing SiC/B on the bar blank 4 The matrix C improves the thermal oxidation life of the ceramic matrix composite material;
step 6, finish machining;
finish machining the shape of the bar blank prepared in the step 5 to form a finished bolt;
step 7, depositing a SiC coating;
and (3) placing the finished bolt prepared in the step (6) in a CVI deposition furnace, and depositing a silicon carbide anti-oxidation coating on the appearance of the finished bolt after finish machining, wherein the deposition time is 35-40 h, the deposition temperature is 850-950 ℃, and the reaction gas is trichloromethylsilane, argon and hydrogen.
16. The method of making a two-dimensional silicon carbide/silicon carbide composite material joint according to claim 15, wherein: in the step 1.1, the design thickness is more than or equal to one third of the diameter of the bolt.
17. The method of making a two-dimensional silicon carbide/silicon carbide composite material joint according to claim 16, wherein: step 5 deposition of SiC/B 4 The specific technological parameters of the matrix C are as follows: the vacuum degree of the furnace chamber before deposition is required to be less than 500Pa, the deposition temperature is 850-950 ℃, trichloromethylsilane, methane, boron trichloride gas and hydrogen are used as deposition gas and catalytic carrier, the gas flow is 0.1-0.6L/min, and argon with the gas flow rate of 0.5-1L/min is used as reaction shielding gasThe deposition time is 60-80 h.
18. The method of making a two-dimensional silicon carbide/silicon carbide composite material joint according to claim 17, wherein: the deposition temperature is 900 ℃, the gas flow is 0.3L/min, 0.7L/min of argon is used as reaction shielding gas, and the deposition time is 65h.
19. The method of making a two-dimensional silicon carbide/silicon carbide composite material joint according to claim 18, wherein: the specific technological parameters of the BN interface layer deposition in the step 2 are as follows: the vacuum degree of the furnace chamber before deposition is required to be less than 300Pa, the deposition temperature is 620-670 ℃, ammonia gas, boron trichloride gas and hydrogen gas are used as deposition gas and catalytic carriers, the gas flow is 0.1-0.6L/min, argon gas with the concentration of 0.2-0.3L/min is used as reaction shielding gas, and the deposition time is 35-40 h.
20. The method of making a two-dimensional silicon carbide/silicon carbide composite material joint according to claim 19, wherein: the specific process parameters of the step 3 of depositing the SiC matrix are as follows: the deposition temperature is 800-1000 ℃, the vacuum degree is required to be less than 1000Pa, 0.2L/min-0.5L/min argon is used as reaction shielding gas, and the flow rate of H is 0.15L/min-0.4L/min 2 As carrier gas, the trichloromethyl silane is sent into a deposition furnace to react with hydrogen, and the deposition time is 40-60 h.
21. The method of making a two-dimensional silicon carbide/silicon carbide composite material joint according to claim 20, wherein: the pin positions of the two-dimensional silicon carbide/silicon carbide composite materials with smaller specifications: the bolts are uniformly distributed along the length direction, the distance between the pin holes is not less than 8mm, and the riveting part is close to or arranged at the part of the nut mounting stirrup.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111198015.XA CN113816755B (en) | 2021-10-14 | 2021-10-14 | Two-dimensional silicon carbide/silicon carbide composite bar and preparation method of connecting piece |
| PCT/CN2022/096448 WO2023060907A1 (en) | 2021-10-14 | 2022-05-31 | Preparation method for two-dimensional silicon carbide/silicon carbide composite material bar and connecting piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111198015.XA CN113816755B (en) | 2021-10-14 | 2021-10-14 | Two-dimensional silicon carbide/silicon carbide composite bar and preparation method of connecting piece |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113816755A CN113816755A (en) | 2021-12-21 |
| CN113816755B true CN113816755B (en) | 2023-09-01 |
Family
ID=78916541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111198015.XA Active CN113816755B (en) | 2021-10-14 | 2021-10-14 | Two-dimensional silicon carbide/silicon carbide composite bar and preparation method of connecting piece |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113816755B (en) |
| WO (1) | WO2023060907A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113816755B (en) * | 2021-10-14 | 2023-09-01 | 西安鑫垚陶瓷复合材料有限公司 | Two-dimensional silicon carbide/silicon carbide composite bar and preparation method of connecting piece |
| CN115160005A (en) * | 2022-06-22 | 2022-10-11 | 西安鑫垚陶瓷复合材料有限公司 | Preparation method of two-dimensional silicon carbide/silicon carbide composite material nut |
| CN115369378B (en) * | 2022-08-17 | 2023-09-01 | 西安鑫垚陶瓷复合材料股份有限公司 | C/SiC composite material special-shaped shaft forming tool and forming method thereof |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1364745A (en) * | 2001-01-12 | 2002-08-21 | 北京科技大学 | Process for preparing silicon carbide/carbon and boron carbide/carbon functional gradient material |
| CN101153384A (en) * | 2006-09-28 | 2008-04-02 | 中南大学 | Method for manufacturing unit doublet carbide codeposition fibre-reinforced composite |
| CN101503305A (en) * | 2009-02-03 | 2009-08-12 | 西北工业大学 | Process for preparing self-sealing silicon carbide ceramic based composite material |
| CN102775176A (en) * | 2012-07-18 | 2012-11-14 | 西安鑫垚陶瓷复合材料有限公司 | Preparation method of three-dimensional needling carbon/carborundum composite material bolt |
| CN103936450A (en) * | 2014-03-26 | 2014-07-23 | 西北工业大学 | Preparation method for sharp leading edge |
| CN105646007A (en) * | 2014-12-02 | 2016-06-08 | 中国科学院金属研究所 | Preparation method of low-temperature long-time oxidation-resistant coating layer on carbon/carbon composite material surfaces |
| CN105835455A (en) * | 2015-12-15 | 2016-08-10 | 西安鑫垚陶瓷复合材料有限公司 | 2D carbon/silicon-silicon carbide composite material pin preparation method and preparation method and structure of 2D carbon/silicon-silicon carbide composite material pin preform |
| CN106478125A (en) * | 2016-09-28 | 2017-03-08 | 西北工业大学 | A kind of B4The preparation method of C modification C/C SiC brake material |
| CN108947552A (en) * | 2018-07-30 | 2018-12-07 | 西北工业大学 | A kind of suction wave mode SiC nanowire enhancing SiBCN composite ceramic coat and preparation method |
| CN111056855A (en) * | 2019-11-12 | 2020-04-24 | 山东道普安制动材料有限公司 | Preparation method of carbon-ceramic brake material with strong oxidation resistance |
| CN112430117A (en) * | 2020-11-25 | 2021-03-02 | 中航复合材料有限责任公司 | In-situ reaction connection method for silicon carbide-based composite material |
| CN112552065A (en) * | 2021-01-27 | 2021-03-26 | 巩义市泛锐熠辉复合材料有限公司 | Fiber-reinforced ceramic matrix composite bolt and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4166350B2 (en) * | 1998-06-26 | 2008-10-15 | 東洋炭素株式会社 | Oxidation-resistant boron carbide-silicon carbide composite carbon material, sintering crucible using the same, vacuum evaporation crucible, and high-temperature firing jig |
| US6979490B2 (en) * | 2001-01-16 | 2005-12-27 | Steffier Wayne S | Fiber-reinforced ceramic composite material comprising a matrix with a nanolayered microstructure |
| CN113816755B (en) * | 2021-10-14 | 2023-09-01 | 西安鑫垚陶瓷复合材料有限公司 | Two-dimensional silicon carbide/silicon carbide composite bar and preparation method of connecting piece |
-
2021
- 2021-10-14 CN CN202111198015.XA patent/CN113816755B/en active Active
-
2022
- 2022-05-31 WO PCT/CN2022/096448 patent/WO2023060907A1/en unknown
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1364745A (en) * | 2001-01-12 | 2002-08-21 | 北京科技大学 | Process for preparing silicon carbide/carbon and boron carbide/carbon functional gradient material |
| CN101153384A (en) * | 2006-09-28 | 2008-04-02 | 中南大学 | Method for manufacturing unit doublet carbide codeposition fibre-reinforced composite |
| CN101503305A (en) * | 2009-02-03 | 2009-08-12 | 西北工业大学 | Process for preparing self-sealing silicon carbide ceramic based composite material |
| CN102775176A (en) * | 2012-07-18 | 2012-11-14 | 西安鑫垚陶瓷复合材料有限公司 | Preparation method of three-dimensional needling carbon/carborundum composite material bolt |
| CN103936450A (en) * | 2014-03-26 | 2014-07-23 | 西北工业大学 | Preparation method for sharp leading edge |
| CN105646007A (en) * | 2014-12-02 | 2016-06-08 | 中国科学院金属研究所 | Preparation method of low-temperature long-time oxidation-resistant coating layer on carbon/carbon composite material surfaces |
| CN105835455A (en) * | 2015-12-15 | 2016-08-10 | 西安鑫垚陶瓷复合材料有限公司 | 2D carbon/silicon-silicon carbide composite material pin preparation method and preparation method and structure of 2D carbon/silicon-silicon carbide composite material pin preform |
| CN106478125A (en) * | 2016-09-28 | 2017-03-08 | 西北工业大学 | A kind of B4The preparation method of C modification C/C SiC brake material |
| CN108947552A (en) * | 2018-07-30 | 2018-12-07 | 西北工业大学 | A kind of suction wave mode SiC nanowire enhancing SiBCN composite ceramic coat and preparation method |
| CN111056855A (en) * | 2019-11-12 | 2020-04-24 | 山东道普安制动材料有限公司 | Preparation method of carbon-ceramic brake material with strong oxidation resistance |
| CN112430117A (en) * | 2020-11-25 | 2021-03-02 | 中航复合材料有限责任公司 | In-situ reaction connection method for silicon carbide-based composite material |
| CN112552065A (en) * | 2021-01-27 | 2021-03-26 | 巩义市泛锐熠辉复合材料有限公司 | Fiber-reinforced ceramic matrix composite bolt and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| CVI-2D C/SiC复合材料铆接单元的力学行为与失效机制;张毅;《万方 中国学位论文全文数据库》;20190118;第1-137页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113816755A (en) | 2021-12-21 |
| WO2023060907A1 (en) | 2023-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113816755B (en) | Two-dimensional silicon carbide/silicon carbide composite bar and preparation method of connecting piece | |
| CN108314458B (en) | Preparation method of high-thermal-conductivity carbon/carbon composite material | |
| US8309197B2 (en) | Integral abradable seals | |
| CN101830703B (en) | Carbon fiber reinforced boron carbide composite material and preparation method thereof | |
| CN108046819B (en) | C/C-SiC friction material with integrated structure and function and preparation method thereof | |
| CN107879758B (en) | C/C-SiC composite material with sandwich structure and preparation method thereof | |
| CN106007767B (en) | One specific admixture matrix heat structure C/C-MC composite material and preparation method | |
| US20200308066A1 (en) | Ceramic Matrix Composite Articles and Methods for Manufacturing the Same | |
| CN105835455A (en) | 2D carbon/silicon-silicon carbide composite material pin preparation method and preparation method and structure of 2D carbon/silicon-silicon carbide composite material pin preform | |
| CN109608218B (en) | Self-healing ceramic matrix composite and low-temperature rapid preparation method thereof | |
| CN109627032B (en) | Preparation method of high-thermal-conductivity and electric-conductivity ceramic matrix composite containing three-dimensional ordered graphene | |
| EP2774905A1 (en) | Ceramic matrix composite | |
| CN113233910B (en) | Method for improving densification density of thick carbon/carbon composite material plate | |
| CN113024269A (en) | Preparation method of high-performance super-large and super-thick carbon/carbon composite material | |
| CN114014680A (en) | Ceramic matrix composite material turbine outer ring and preparation method thereof | |
| CN109955551A (en) | A kind of preparation method of the compound oxidization fiber precast body of carbon fiber | |
| CN113603495A (en) | Method for preparing ceramic matrix composite bolt and pin based on long rod-shaped prefabricated body structure | |
| US20190359531A1 (en) | Method of making a fiber preform for ceramic matrix composite (cmc) fabrication | |
| CN103274714B (en) | Improved Z-pin method for two-dimensional ceramic matrix composite | |
| CN107445641A (en) | A kind of preparation method of carbon brake disc | |
| CN115160005A (en) | Preparation method of two-dimensional silicon carbide/silicon carbide composite material nut | |
| CN117024164A (en) | Ceramic modified carbon-carbon composite nose cone and preparation method thereof | |
| CN113929482B (en) | Ceramic matrix composite turbine guide vane and preparation method thereof | |
| US20050186878A1 (en) | Thermo-mechanical property enhancement plies for CVI/SiC ceramic matrix composite laminates | |
| CN113651630B (en) | Carbon/carbon honeycomb sandwich structure for high-temperature heat insulation and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 710117 West Section 912 of Biyuan Road, Xi'an High-tech Zone, Shaanxi Province Patentee after: Xi'an Xinyao Ceramic Composite Co.,Ltd. Guo jiahuodiqu after: Zhong Guo Address before: 710117 West Section 912 of Biyuan Road, Xi'an High-tech Zone, Shaanxi Province Patentee before: XI'AN GOLDEN MOUNTAIN CERAMIC COMPOSITES CO.,LTD. Guo jiahuodiqu before: Zhong Guo |