CN113808921A - Manufacturing method of flexible electronic device with characteristic dimension in submicron order - Google Patents
Manufacturing method of flexible electronic device with characteristic dimension in submicron order Download PDFInfo
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- CN113808921A CN113808921A CN202110841027.3A CN202110841027A CN113808921A CN 113808921 A CN113808921 A CN 113808921A CN 202110841027 A CN202110841027 A CN 202110841027A CN 113808921 A CN113808921 A CN 113808921A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 238000001259 photo etching Methods 0.000 claims abstract description 10
- 238000001883 metal evaporation Methods 0.000 claims abstract description 8
- 238000010894 electron beam technology Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 19
- 239000010931 gold Substances 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 238000009987 spinning Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 238000009210 therapy by ultrasound Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000004642 Polyimide Substances 0.000 abstract 2
- 229920001721 polyimide Polymers 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 229920005570 flexible polymer Polymers 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Abstract
The invention belongs to the technical field of semiconductors, and particularly relates to manufacturing of a flexible electronic device with a characteristic dimension in a submicron order. The method is characterized in that: the manufacturing method of the flexible micro-nano device is realized by utilizing traditional photoetching process equipment, and specifically comprises a flexible polymer such as Polyimide (PI) as a base material, wherein a flexible substrate is prepared by depositing a metal electrode on the base material through a photoetching process, the flexible substrate is used as a carrier of the micro-nano electronic device, and the micro-nano electronic device is used for preparing the metal electrode as the input of a source electrode and a drain electrode through an electron beam exposure process and a metal evaporation process. The invention has the advantages that the flexible micro-nano device substrate can be produced in batch, meanwhile, the flexibility in constructing the electrode pattern is higher, the high convenience is provided for the construction of the complex electrical structure of the device, and the application range is wider.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to manufacturing of a flexible electronic device with a characteristic dimension in a submicron order.
Background
In recent years, the microelectronic technology is rapidly developed, novel flexible electronic materials and devices with the characteristics of simple manufacturing process, low cost, portability, flexibility and the like are developed, the limitations of traditional rigid microelectronic devices can be effectively made up, and the functional diversity development of modern electronic products is promoted.
The common manufacturing method of the flexible micro-nano electronic device at present comprises the following steps:
the functional material is directly printed on the substrate to form a pattern by an ink-jet technology, but the technology of improving the controllability of the jet printing process by utilizing multi-field regulation is not mature enough, so that the stability of the jet printing process is poor, and meanwhile, the technology has higher production cost.
Rigid substrate electronics are transferred together onto flexible substrates by transfer printing techniques, but this method has significant technical bottlenecks in high concurrency and large-scale integration mass production, and has yet to be developed.
The metal evaporation is directly carried out on the flexible substrate through a mask, but the method is difficult to manufacture smaller-sized electrodes due to the diffraction phenomenon, and the complexity of manufactured electronic devices is limited and is not suitable for the introduction of complex circuit structures.
Disclosure of Invention
The invention aims to avoid the defects caused by the manufacturing methods of the devices, provide a brand new manufacturing process of the flexible micro-nano electronic device based on the two-dimensional material, realize the design and the manufacture of the chip-level flexible micro-nano electronic device, provide a new solution for the mass production of the flexible micro-nano electronic device and have high reference value.
The technical scheme of the invention is as follows:
the manufacture of flexible electronic devices with characteristic dimensions in the submicron order is characterized in that: the flexible substrate is used as a carrier of a micro-nano electronic device, and the micro-nano electronic device is used for preparing a metal electrode as the input of a source electrode and a drain electrode through an electron beam exposure process and a metal evaporation process.
The method of claim 1, wherein the PI film is fixed to a hard substrate to facilitate spin coating of the photoresist, and wherein a negative photoresist 202 is also spin coated between the PI film and the substrate to allow the PI film to be adhered to the hard substrate.
The method of claim 1, wherein the pre-e-beam exposure substrate is spin coated with a layer of conductive resist (AR-PC5090.02) after being spin coated with photoresist, because the PI base insulation causes charging effects under e-beam exposure, which results in shifting the exposure image.
A method of manufacturing a flexible substrate, characterized by: the method comprises the following steps:
(1) and drawing a metal electrode and a cross mark pattern on the flexible substrate, reserving a blank area of 100um multiplied by 100um in the middle of the electrode, and manufacturing a mask.
(2) The flexible PI film is fixed on the hard substrate, and in order to improve the subsequent photoetching forming effect, a layer of photoresist is coated between the PI film and the hard substrate in a spinning mode, so that the PI film can be flatly attached to the hard substrate.
(3) Negative glue 202 is spin-coated on the PI film, and is exposed by a photolithography machine after being heated and dried.
(4) Depositing Cr and Au by using a metal evaporation process, and putting the substrate into acetone for ultrasonic treatment to strip metal.
(5) A layer of gold film is deposited on the back of the flexible substrate, so that accumulated charges in the insulating substrate are prevented from generating point discharge at the tail end of the electrode to burn the device.
The method as claimed in claim 4, wherein the photolithography process parameters in the step (3): spin-coating negative glue 202 by using a spin coater, pre-rotating for 30s at 600rpm, main rotating for 80s at 5000rpm, pre-baking for 300s at 90 ℃ by using a hot plate, post-baking for 180s at 90 ℃ by using a hot plate after exposure by using a photoetching machine, and developing for 75s by using a developing solution.
The method as claimed in claim 4, wherein in the step (4), the thickness of the adhesion layer Cr is 30nm, the thickness of the Au electrode is 200nm, and the ultrasonic time is 15 min.
The method of claim 4, wherein in step (5), the substrate back side gold thin film has a thickness of 100 nm.
The invention has the advantages and positive effects that:
1. the manufacture of flexible electronic devices with feature sizes in the submicron order is successfully realized by using the traditional photoetching process equipment, and the process has high reference value for the development of flexible chips.
2. The invention can realize the batch manufacture of flexible micro-nano device substrates, the minimum size of the device is only limited by the equipment precision in the manufacturing process, and the invention is beneficial to realizing the rapid mass production of nano-scale flexible devices.
3. The terminal electrode pattern constructed by the invention has higher flexibility, provides higher convenience for constructing a complex electrical structure of a device, has wider application range, and simultaneously has simpler preparation process and lower cost compared with other flexible device preparation processes.
4. The flexible micro-nano electronic device prepared by the invention has good stability, the deposited Cr/Au electrode can well meet various electrical tests, and meanwhile, the flexible micro-nano electronic device has strong strain bearing capacity and can bear stable photoelectric tests under the condition of 20% strain.
Drawings
FIG. 1 test electrodes on a flexible substrate
FIG. 2 Flexible substrate after backside metallization
FIG. 3 illustrates an enlarged image of a flexible photodetector device
FIG. 4 shows the bending effect of the flexible photoelectric detector
FIG. 5 photo-response effect of flexible photo-detector device
Detailed description of the invention
The technical scheme of the invention is further described in detail by combining the accompanying drawings 1, 2, 3, 4 and 5 and specific embodiments:
the manufacture of flexible electronic devices with characteristic dimensions in the submicron order is characterized in that: the flexible substrate is used as a carrier of a micro-nano electronic device, and the micro-nano electronic device is used for preparing a metal electrode as the input of a source electrode and a drain electrode through an electron beam exposure process and a metal evaporation process.
The flexible substrate prepared by the invention is shown in figure 1, and the preparation process comprises the following steps:
(1) and drawing a mask with 12 electrode patterns, reserving a blank area of 100um multiplied by 100um in the middle of the test electrode, and using the blank area as a material transfer area.
(2) The flexible PI film is fixed on the hard substrate, and in order to improve the subsequent photoetching forming effect, a layer of photoresist is coated between the PI film and the hard substrate in a spinning mode, so that the PI film can be flatly attached to the hard substrate.
(3) Spin-coating negative glue 202 by using a spin coater, pre-rotating for 30s at 600rpm, main rotating for 80s at 5000rpm, pre-baking for 300s at 90 ℃ by using a hot plate, post-baking for 180s at 90 ℃ by using a hot plate after exposure by using a photoetching machine, and developing for 75s by using a developing solution.
(4) After obtaining a test electrode pattern by photoetching, carrying out evaporation plating of a test electrode in an electron beam evaporation table, wherein the thicknesses of Cr and Au are respectively 30nm and 200nm, then carrying out metal stripping treatment, soaking a substrate downwards into acetone, and carrying out ultrasonic cleaning for 15min in an ultrasonic groove.
In order to prevent accumulated charges in the insulating material from burning out the device by point discharge at both ends of the electrode, a layer of gold thin film is deposited on the back surface of the substrate, as shown in fig. 2, and the thickness of the gold thin film is 100 nm.
The two-dimensional material is obtained by a mechanical stripping method and then transferred to the blank area of the substrate by dry transfer.
The end electrode of the flexible photoelectric detector manufactured by the invention is shown in figure 3, and the minimum width of the electrode is 2 um. The preparation process comprises the following steps:
(1) spin-coat electron beam resist PMMA (950A6) using spin coater, pre-spin for 30s at 600rpm, main spin for 60s at 2000rpm, and bake using hot plate at 180 ℃ for 90 s.
(2) Spin-coating conductive adhesive (AR-PC5090.02) by using a spin coater, wherein the time duration of pre-rotation is 30s at 600rpm, the time duration of main rotation is 60s at 2000rpm, and the time duration of drying at 90 ℃ is 120s by using a hot plate.
(3) Drawing an end electrode pattern by using an electron beam Exposure (EBL) technology, and developing by using a developing solution after exposure: and 75 s.
(4) Depositing metal of 30nm Cr and 200nmAu by using a metal evaporation table, soaking the substrate in acetone for 15 minutes, carrying out metal stripping treatment, and blow-drying by using a nitrogen gun to obtain the flexible micro-nano photoelectric device.
The bending test of the prepared flexible micro-nano photoelectric detector is shown in fig. 4.
The photoelectric test result of the flexible micro-nano photoelectric detector is shown in fig. 5, and the flexible micro-nano photoelectric detector has good photoelectric response to the illumination of the device with the wavelengths of 500nm, 600nm and 700nm, and basically meets the expectation of photoelectric detection equipment.
Although an embodiment of the present invention has been described in detail, the description is only a preferred embodiment of the present invention, and should not be construed as limiting the invention, and all equivalent changes and modifications made within the scope of the present invention should be covered by the claims.
Claims (7)
1. The manufacture of flexible electronic devices with characteristic dimensions in the submicron order is characterized in that: the flexible substrate is used as a carrier of a micro-nano electronic device, and the micro-nano electronic device is used for preparing a metal electrode as the input of a source electrode and a drain electrode through an electron beam exposure process and a metal evaporation process.
2. The method of claim 1, wherein the PI film is fixed to a hard substrate to facilitate spin coating of the photoresist, and wherein a negative photoresist 202 is also spin coated between the PI film and the substrate to allow the PI film to be adhered to the hard substrate.
3. The method of claim 1, wherein the pre-e-beam exposure substrate is spin coated with a layer of conductive resist (AR-PC5090.02) after being spin coated with photoresist, because the PI base insulation causes charging effects under e-beam exposure, which results in shifting the exposure image.
4. A method of manufacturing a flexible substrate, characterized by: the method comprises the following steps:
(1) drawing metal electrodes and cross mark patterns on a flexible substrate, wherein the middle of the electrodes is reserved
And manufacturing a mask plate in the blank area.
(2) The flexible PI film is fixed on the hard substrate, and in order to improve the subsequent photoetching forming effect, a layer of photoresist is coated between the PI film and the hard substrate in a spinning mode, so that the PI film can be flatly attached to the hard substrate.
(3) Negative glue 202 is spin-coated on the PI film, and is exposed by a photolithography machine after being heated and dried.
(4) Depositing Cr and Au by using a metal evaporation process, and putting the substrate into acetone for ultrasonic treatment to strip metal.
(5) A layer of gold film is deposited on the back of the flexible substrate, so that accumulated charges in the insulating substrate are prevented from generating point discharge at the tail end of the electrode to burn the device.
5. The method as claimed in claim 4, wherein the photolithography process parameters in the step (3): spin-coating negative glue 202 by using a spin coater, pre-rotating for 30s at 600rpm, main rotating for 80s at 5000rpm, pre-baking for 300s at 90 ℃ by using a hot plate, post-baking for 180s at 90 ℃ by using a hot plate after exposure by using a photoetching machine, and developing for 75s by using a developing solution.
6. The method as claimed in claim 4, wherein in the step (4), the thickness of the adhesion layer Cr is 30nm, the thickness of the Au electrode is 200nm, and the ultrasonic time is 15 min.
7. The method of claim 4, wherein in step (5), the substrate back side gold thin film has a thickness of 100 nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110841027.3A CN113808921A (en) | 2021-07-26 | 2021-07-26 | Manufacturing method of flexible electronic device with characteristic dimension in submicron order |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110841027.3A CN113808921A (en) | 2021-07-26 | 2021-07-26 | Manufacturing method of flexible electronic device with characteristic dimension in submicron order |
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| CN113808921A true CN113808921A (en) | 2021-12-17 |
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| CN202110841027.3A Pending CN113808921A (en) | 2021-07-26 | 2021-07-26 | Manufacturing method of flexible electronic device with characteristic dimension in submicron order |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117012541A (en) * | 2023-09-28 | 2023-11-07 | 中北大学 | Controllable stripping preparation method of high-density flexible micro-nano coil |
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| CN103943513A (en) * | 2014-05-07 | 2014-07-23 | 中国科学院上海微***与信息技术研究所 | Method for preparing graphene device on flexible substrate |
| CN104934329A (en) * | 2015-04-28 | 2015-09-23 | 吉林建筑大学 | Preparation method for ZnO-Thin Film Transistor (ZnO-TFT) based on flexible substrate material |
| CN109580553A (en) * | 2018-11-22 | 2019-04-05 | 复旦大学 | A kind of preparation method of the gas of based single crystal silicon nano thin-film photoelectric device and chemical substance sensor-based system |
| CN110224030A (en) * | 2019-04-30 | 2019-09-10 | 中山大学 | A kind of production method of the thin film transistor (TFT) and transistor of sub-micron heterojunction structure |
| CN110367978A (en) * | 2019-06-26 | 2019-10-25 | 上海交通大学 | A kind of three-dimensional buckling structure flexibility nerve electrode and its preparation process |
-
2021
- 2021-07-26 CN CN202110841027.3A patent/CN113808921A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103943513A (en) * | 2014-05-07 | 2014-07-23 | 中国科学院上海微***与信息技术研究所 | Method for preparing graphene device on flexible substrate |
| CN104934329A (en) * | 2015-04-28 | 2015-09-23 | 吉林建筑大学 | Preparation method for ZnO-Thin Film Transistor (ZnO-TFT) based on flexible substrate material |
| CN109580553A (en) * | 2018-11-22 | 2019-04-05 | 复旦大学 | A kind of preparation method of the gas of based single crystal silicon nano thin-film photoelectric device and chemical substance sensor-based system |
| CN110224030A (en) * | 2019-04-30 | 2019-09-10 | 中山大学 | A kind of production method of the thin film transistor (TFT) and transistor of sub-micron heterojunction structure |
| CN110367978A (en) * | 2019-06-26 | 2019-10-25 | 上海交通大学 | A kind of three-dimensional buckling structure flexibility nerve electrode and its preparation process |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117012541A (en) * | 2023-09-28 | 2023-11-07 | 中北大学 | Controllable stripping preparation method of high-density flexible micro-nano coil |
| CN117012541B (en) * | 2023-09-28 | 2023-12-15 | 中北大学 | Controllable stripping preparation method of high-density flexible micro-nano coil |
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