CN112975142A - Film material patterning processing method based on femtosecond laser controllable etching - Google Patents
Film material patterning processing method based on femtosecond laser controllable etching Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
Abstract
The invention relates to a femtosecond laser controllable etching-based high-precision rapid patterning processing method for a thin film material. The patterning processing method has high processing precision, and the dimension error of the pattern can reach within +/-3%; the process is simple, and the processing efficiency is high; the cold processing characteristic of the ultraviolet femtosecond laser is utilized to reduce the thermal damage to the film; the laser energy is accurately controlled, and the substrate material is not damaged; no toxic reagent is used, and the method is environment-friendly and safe.
Description
Technical Field
The invention belongs to the technical field of micro-nano processing, and particularly relates to a high-precision thin film material rapid patterning processing method based on femtosecond laser controllable etching.
Background
At present, the patterning of the thin film material mainly adopts a mask process or a photolithography process. The mask method is to closely attach a metal mask plate on a substrate, and materials can be directly deposited in a blank area of the mask plate in the film coating process and directly complete patterning. The method is simple, but the precision of film patterning is low due to the fluctuation of the mask.
The photoetching process is to obtain a patterned structure on a substrate by utilizing ultraviolet light to cure a photoresist, prepare a target coating by utilizing a coating process, and dissolve the photoresist by utilizing a photoresist removing solution to obtain the target coating structure consistent with the pattern. The general process flow comprises the following steps: (1) gluing, namely forming a photoresist film with uniform thickness, strong adhesiveness and no defects on a substrate; (2) prebaking, the photoresist film after spin coating still has a certain content of solvent, and the solvent can be removed by volatilization as low as possible through baking at a higher temperature; (3) exposure-the photoresist is illuminated, and the difference of solubility is generated between the illuminated part and the non-illuminated part; (4) developing and hardening, namely immersing the product in a developing solution, wherein an exposed area of the positive glue and a non-exposed area of the negative glue are dissolved in the developing solution; (5) etch-the material under the photoresist is etched. The greatest advantage of the photoetching process is that extremely high processing precision can be obtained, but the process is complex, the type and thickness of the photoresist, the coating mode and parameters of the target coating and the stripping process all affect the final processing effect and material performance, the preparation period is long, and a large amount of wastewater and toxic substances are generated at the same time.
In recent years, wearable equipment is rapidly developed, the life of people is greatly facilitated, and the market scale is rapidly increased. The goods output of Chinese market of wearable equipment in 2017 is about 6000 thousands of wearable equipment, which accounts for 50-60% of the global market, the goods output of Chinese market of 2018 is 7321 thousands of wearable equipment, which is increased by 28.5% on year-by-year basis, and the application of 5G enables the wearable equipment to be rapidly popularized and become an important entrance and application terminal of the Internet of things. At present, wearable equipment is developing towards miniaturization and intellectualization, which puts higher demands on the performance of key components, and thus, an efficient and high-precision thin film material patterning technology is urgently required to be developed, and the array density of devices is further improved. In addition to conventional masking and photolithography processes, new techniques based on laser thin film material patterning are also receiving much attention.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a high-precision thin film material rapid patterning processing method based on femtosecond laser controllable etching. The patterning processing method has high processing precision, and the dimension error of the pattern can reach within +/-3%; the process is simple, and the processing efficiency is high; the cold processing characteristic of ultraviolet femtosecond laser is utilized to reduce the thermal damage to the film; the laser energy is accurately controlled, and the substrate material is not damaged; no toxic reagent is used, and the method is environment-friendly and safe.
The technical scheme adopted by the invention is as follows:
a high-precision thin film material rapid patterning processing method based on femtosecond laser controllable etching comprises the following steps:
(1) preparing a film: depositing a layer of thin film material on a substrate;
(2) etching and patterning the thin film material in the step (1) by using femtosecond laser;
(3) and (3) placing the patterned material obtained in the step (2) in alcohol for ultrasonic cleaning, and drying to obtain the patterned thin film material.
In the step (1), a film material is prepared on the substrate by adopting a magnetron sputtering, evaporation plating or electroplating method.
In the step (1), the film material is a metal film or a non-metal film, and the thickness of the film material is 1-40 μm. The femtosecond laser controllable etching-based high-precision rapid patterning processing method for the thin film material can realize patterning processing of various thin film materials, including but not limited to various metal thin films, semiconductor thin films, oxide ceramic thin films, graphene and the like. Further, the patterning process method of the present invention can realize the processing of thin film materials grown on various types of substrates, including but not limited to SiO2/Si、AlN、Al2O3Polyimide (PI), and the like.
In the step (2), the femtosecond laser adopts a direct writing mode for etching.
In the step (2), the patterned shape is any one of a point array, a line array and a circle array or a combination of more than two of the above arrays.
The pulse width of the laser output by the femtosecond laser is set to 290fs-10ps, the repetition frequency is set to 50-100kHz, the single pulse energy is set to 7.5-37.5 muJ, and the laser energy density is 0-5000mJ/cm2。
In the step (2), when the pattern is etched, the etching area needs to be filled first, and the gap between the filled lines is 10-20 μm.
And (2) etching and patterning the thin film material by adopting a femtosecond laser processing system.
The structure of the femtosecond laser processing system comprises a femtosecond laser, an optical attenuation sheet with continuously adjustable optical density, an optical reflector, a galvanometer processing system, a processing control system and a displacement platform which are sequentially connected;
utilizing the femtosecond laser to emit ultraviolet laser to etch and process the thin film material;
the optical attenuation sheet is placed in a laser light path of the femtosecond laser and is vertical to the laser light path so as to accurately control the single pulse energy of the laser;
the optical reflection lenses are arranged in a plurality, and laser enters the mirror vibration processing system to realize focusing after being reflected by the optical reflection lenses;
the processing control system is used for importing a drawing for drawing a pattern and finishing pattern alignment;
the displacement platform is used for clamping, fixing and accurately moving the thin film material to be processed.
The wavelength of the ultraviolet laser emitted by the femtosecond laser is 343 nm.
The attenuation efficiency of the optical attenuation sheet is continuously adjustable from 17% to 99.85%;
the diameter of a laser spot of the laser focused by the vibrating mirror processing system is 10 mu m.
The invention has the beneficial effects that:
(1) the invention relates to a femtosecond laser controllable etching-based high-precision thin film material rapid patterning processing method, which comprises the steps of firstly depositing a layer of thin film material on a substrate, then etching and patterning the thin film material by using femtosecond laser, and finally placing the patterned material in alcohol for ultrasonic cleaning and drying to obtain the patterned thin film material. The patterning processing method has high processing precision, and the dimension error of the pattern can reach within +/-3%; the process is simple, and the processing efficiency is high; the cold processing characteristic of the ultraviolet femtosecond laser is utilized to reduce the thermal damage to the film; the laser energy is accurately controlled, and the substrate material is not damaged; no toxic reagent is used, and the method is environment-friendly and safe.
(2) The femtosecond laser processing system is used for accurately controlling laser energy by using the optical attenuation sheet with variable optical density, the laser energy is adjusted according to damage thresholds of different materials, the laser energy is modulated to be higher than the damage threshold of the thin film material and lower than the loss threshold of the substrate material, and processing is started after focusing is finished, so that selective processing of the thin film is realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without any creative effort.
Fig. 1 is a schematic structural diagram of a femtosecond laser processing system according to embodiment 1 of the present invention;
FIG. 2 is a structural representation of a patterned metal electrode film material according to example 1 of the present invention, wherein FIG. A is a schematic view of the overall structure of the patterned electrode, and FIG. B is a schematic view of the area encircled by FIG. A and its dimensions;
FIG. 3 is a structural representation of a patterned bismuth telluride thermoelectricity arm as described in example 3 of the present invention;
FIG. 4 is a structural representation of a patterned thin film thermistor according to example 4 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be described in detail below. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the examples given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
The embodiment provides a patterned electrode processing method of a thin film thermoelectric power generation device based on femtosecond laser controllable etching, which specifically comprises the following steps:
(1) film preparation
Depositing an electrode layer on an AlN substrate with the thickness of 380 mu m by adopting an electroplating method, wherein the electrode layer sequentially comprises a titanium bonding layer (50nm), a copper conducting layer (7.2 mu m), a nickel barrier layer (5.2 mu m) and a gold contact layer (100nm) from bottom to top;
the peripheral size of the electrodes is 16mm by 16mm, the number of electrode patterns is 324, the size of the patterns is 540 mu m by 260 mu m, and the intervals of the transverse direction and the longitudinal direction of the patterns are 60 mu m and 40 mu m respectively; before etching, filling the area to be etched in the processing drawing, wherein the space between every two filling lines is 16 microns;
(2) etching and patterning the thin film material in the step (1) by adopting a femtosecond laser processing system, wherein the patterned shape is a linear array structure; the femtosecond laser adopts a direct writing mode to etch;
the structure of the femtosecond laser processing system is shown in figure 1, and comprises a femtosecond laser, an optical attenuation sheet with continuously adjustable optical density, an optical reflection lens, a galvanometer processing system, a processing control system and a vacuum adsorption displacement platform which are sequentially connected; the femtosecond laser is used for emitting ultraviolet laser with the wavelength of 343nm to etch and process the thin film material; the optical attenuation sheet is placed in a laser light path of the femtosecond laser and is vertical to the laser light path so as to accurately control the single pulse energy of the laser; the attenuation efficiency of the optical attenuation sheet is continuously adjustable from 17% to 99.85%; the laser processing system comprises a plurality of optical reflection lenses, a vibrating mirror processing system and a laser processing system, wherein the optical reflection lenses are arranged in a plurality, laser enters the vibrating mirror processing system to realize focusing after being reflected by the optical reflection lenses, and the diameter of a laser spot of the laser after being focused by the vibrating mirror processing system is 10 micrometers; the processing control system is used for importing a drawing for drawing a pattern and finishing pattern alignment; the vacuum adsorption displacement platform is used for clamping and fixing the thin film material to be processed.
In this embodiment, a piece of electrode thin film material with a thickness of 20mm by 20mm is fixedly placed on a vacuum adsorption displacement platform, and then a drawing is guided into a processing control system to complete pattern alignment; the femtosecond laser pulse width was set to 290fs, the repetition frequency was set to 100kHz, the single pulse energy was set to 15 μ J, and the laser energy density was 668.79mJ/cm2(ii) a Adjusting the attenuation efficiency of the optical attenuation sheet to 96.5%; setting the processing times as 50 times, and starting to pattern the electrode film;
after the processing is finished, a peripheral frame drawing of the patterned electrode is led into a processing control system, an attenuation sheet in a laser light path is removed, the single-pulse energy of the laser is set to be 37.5 mu J, and the laser energy density is 47770.7mJ/cm2The number of processing times was set to 500, and cutting of the excess film and the base material was started. After the processing is finished, manually removing the redundant outer part of the frame;
(3) and (3) placing the processed material in an alcohol solution for ultrasonic treatment for 10min, cleaning the surface, and drying to obtain the patterned electrode film, as shown in figure 2.
Example 2
The embodiment provides a patterned electrode processing method of a thin film thermoelectric power generation device based on femtosecond laser controllable etching, which specifically comprises the following steps:
(1) film preparation
Depositing an electrode layer on an AlN substrate with the thickness of 380 mu m by adopting an electroplating method, wherein the electrode layer sequentially comprises a titanium bonding layer (100nm), a copper conducting layer (35 mu m), a nickel barrier layer (6 mu m) and a gold contact layer (200nm) from top to bottom;
the peripheral size of the electrodes is 16mm by 16mm, the number of electrode patterns is 324, the size of the patterns is 540 mu m by 260 mu m, and the intervals of the transverse direction and the longitudinal direction of the patterns are 60 mu m and 40 mu m respectively; before etching treatment, filling treatment is carried out on a region needing etching in a processing drawing, wherein the interval of the interval filling lines is 20 microns;
(2) etching and patterning the thin film material in the step (1) by adopting a femtosecond laser processing system, wherein the patterned shape is a linear array structure; the femtosecond laser adopts a direct writing mode to etch;
the structure of the femtosecond laser processing system is shown in figure 1, and comprises a femtosecond laser, an optical attenuation sheet with continuously adjustable optical density, an optical reflection lens, a galvanometer processing system, a processing control system and a vacuum adsorption displacement platform which are sequentially connected; the femtosecond laser is used for emitting ultraviolet laser with the wavelength of 343nm to etch and process the thin film material; the optical attenuation sheet is placed in a laser light path of the femtosecond laser and is vertical to the laser light path so as to accurately control the single pulse energy of the laser; the attenuation efficiency of the optical attenuation sheet is continuously adjustable from 17% to 99.85%; the laser processing system comprises a plurality of optical reflection lenses, a vibrating mirror processing system and a laser processing system, wherein the optical reflection lenses are arranged in a plurality, laser enters the vibrating mirror processing system to realize focusing after being reflected by the optical reflection lenses, and the diameter of a laser spot of the laser after being focused by the vibrating mirror processing system is 10 micrometers; the processing control system is used for importing a drawing for drawing a pattern and finishing pattern alignment; the vacuum adsorption displacement platform is used for clamping and fixing the thin film material to be processed.
In this embodiment, a piece of electrode thin film material with a thickness of 20mm by 20mm is fixedly placed on a vacuum adsorption displacement platform, and then a drawing is guided into a processing control system to complete pattern alignment; the femtosecond laser pulse width was set to 290fs, the repetition frequency was set to 100kHz, the single pulse energy was set to 17.5. mu.J, and the laser energy density was 780.26mJ/cm2(ii) a Adjusting the attenuation efficiency of the optical attenuation sheet to 96.5%; setting the processing times as 110 times, and starting to thin the counter electrodePatterning the film;
after the processing is finished, a peripheral frame drawing of the patterned electrode is led into a processing control system, an attenuation sheet in a laser light path is removed, the single-pulse energy of the laser is set to be 37.5 mu J, and the laser energy density is 47770.7mJ/cm2The number of processing times was set to 500, and cutting of the excess film and the base material was started. After the processing is finished, manually removing the redundant outer part of the frame;
(3) and (3) placing the processed material in an alcohol solution for ultrasonic treatment for 10min, cleaning the surface, and drying to obtain the patterned electrode film.
Example 3
The embodiment provides a method for processing an N-type bismuth telluride thermoelectric arm of a thin-film thermoelectric power generation device based on femtosecond laser controllable etching, which comprises the following specific steps:
(1) film preparation
Preparing a layer of N-type bismuth telluride thermoelectric film with the thickness of 4.8 mu m on the electrode film in the embodiment 1 by adopting a magnetron sputtering method;
the overall peripheral size of the thermoelectric arm layer is 10mm by 10mm, the number of the thermoelectric arms is 324, the size is 200 mu m by 200 mu m, and the interval between the transverse direction and the longitudinal direction of the thermoelectric arms is 100 mu m; before etching, filling the area to be etched in the processing drawing, wherein the space between every two filling lines is 16 microns;
(2) etching and patterning the thin film material in the step (1) by adopting a femtosecond laser processing system, wherein the patterned shape is a linear array structure;
the structure of the femtosecond laser processing system is shown in figure 1, and comprises a femtosecond laser, an optical attenuation sheet with continuously adjustable optical density, an optical reflection lens, a galvanometer processing system, a processing control system and a vacuum adsorption displacement platform which are sequentially connected; the femtosecond laser is used for emitting ultraviolet laser with the wavelength of 343nm to etch and process the thin film material; the optical attenuation sheet is placed in a laser light path of the femtosecond laser and is vertical to the laser light path so as to accurately control the single pulse energy of the laser; the attenuation efficiency of the optical attenuation sheet is continuously adjustable from 17% to 99.85%; the laser processing system comprises a plurality of optical reflection lenses, a vibrating mirror processing system and a laser processing system, wherein the optical reflection lenses are arranged in a plurality, laser enters the vibrating mirror processing system to realize focusing after being reflected by the optical reflection lenses, and the diameter of a laser spot of the laser after being focused by the vibrating mirror processing system is 10 micrometers; the processing control system is used for importing a drawing for drawing a pattern and finishing pattern alignment; the vacuum adsorption displacement platform is used for clamping and fixing the thin film material to be processed.
In this embodiment, a 20mm by 20mm film sample is fixedly placed on a vacuum adsorption displacement platform, and then a drawing is guided into a processing control system to complete pattern alignment; the femtosecond laser pulse width was set to 290fs, the repetition frequency was set to 100kHz, the single pulse energy was set to 7.5 muJ, and the laser energy density was 47.77mJ/cm2(ii) a Adjusting the attenuation efficiency of the optical attenuation sheet to 99.5%; setting the processing times to be 25, and starting to pattern the thermoelectric material film;
(3) and (3) placing the patterned material in an alcohol solution for ultrasonic treatment for 10min, cleaning the surface, and drying to obtain the patterned N-type bismuth telluride thermoelectric arm as shown in figure 3.
Example 4
The embodiment provides a method for processing a thin film thermistor based on femtosecond laser controllable etching, which comprises the following steps:
(1) film preparation
Depositing a Cu film on an AlN substrate with the thickness of 380 mu m by adopting a thermal evaporation method, wherein the thickness of the film is 1.2 mu m;
the overall peripheral size of the thermoelectric arm layer is 2.2mm by 2.2mm, and the electrode line width is 30 microns; before etching, filling the area to be etched in the processing drawing, wherein the interval between every two spaced filling lines is 10 microns;
(2) etching and patterning the thin film material in the step (1) by adopting a femtosecond laser processing system, wherein the patterned shape is a linear array and circular array composite structure;
the structure of the femtosecond laser processing system is shown in figure 1, and comprises a femtosecond laser, an optical attenuation sheet with continuously adjustable optical density, an optical reflection lens, a galvanometer processing system, a processing control system and a vacuum adsorption displacement platform which are sequentially connected; the femtosecond laser is used for emitting ultraviolet laser with the wavelength of 343nm to etch and process the thin film material; the optical attenuation sheet is placed in a laser light path of the femtosecond laser and is vertical to the laser light path so as to accurately control the single pulse energy of the laser; the attenuation efficiency of the optical attenuation sheet is continuously adjustable from 17% to 99.85%; the laser processing system comprises a plurality of optical reflection lenses, a vibrating mirror processing system and a laser processing system, wherein the optical reflection lenses are arranged in a plurality, laser enters the vibrating mirror processing system to realize focusing after being reflected by the optical reflection lenses, and the diameter of a laser spot of the laser after being focused by the vibrating mirror processing system is 10 micrometers; the processing control system is used for importing a drawing for drawing a pattern and finishing pattern alignment; the vacuum adsorption displacement platform is used for clamping and fixing the thin film material to be processed.
In this embodiment, a 10mm by 10mm film sample is fixedly placed on a vacuum adsorption displacement platform, and then a drawing is guided into a processing control system to complete pattern alignment; the femtosecond laser pulse width was set to 10ps, the repetition frequency was set to 100kHz, the single pulse energy was set to 15 muJ, and the laser energy density was 780.26mJ/cm2(ii) a Adjusting the attenuation efficiency of the optical attenuation sheet to 96.5%; setting the processing times to be 10 times, and starting to pattern the thermoelectric material film;
(3) and (3) placing the patterned material in an alcohol solution for ultrasonic treatment for 10min, cleaning the surface, and drying to obtain the patterned thin film thermistor, as shown in fig. 4.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A high-precision thin film material rapid patterning processing method based on femtosecond laser controllable etching is characterized by comprising the following steps:
(1) preparing a film: depositing a layer of thin film material on a substrate;
(2) etching and patterning the thin film material in the step (1) by using femtosecond laser;
(3) and (3) placing the patterned material obtained in the step (2) in alcohol for ultrasonic cleaning, and drying to obtain the patterned thin film material.
2. The femtosecond laser controlled etching-based high-precision thin film material rapid patterning processing method according to claim 1, wherein in the step (1), the thin film material is prepared on the substrate by adopting a magnetron sputtering, evaporation or electroplating method.
3. The femtosecond laser controlled etching-based high-precision thin film material rapid patterning processing method according to claim 1, wherein in the step (1), the thin film material is a metal thin film or a non-metal thin film, and the thickness of the thin film material is 1-40 μm.
4. The femtosecond laser controlled etching-based high-precision thin film material rapid patterning processing method according to claim 1, wherein in the step (2), the femtosecond laser adopts a direct writing mode for etching.
5. The femtosecond laser controlled etching-based high-precision thin film material rapid patterning processing method according to claim 1, wherein in the step (2), the patterned shape is any one of a point array, a linear array and a circular array or a combination of two or more of the above arrays.
6. The femtosecond laser controlled etching-based high-precision thin film material rapid patterning processing method according to claim 5, wherein the laser pulse width output by the femtosecond laser is set to 290fs-10ps, the repetition frequency is set to 50-100kHz, the single-pulse energy is set to 7.5-37.5 muJ, and the laser energy density is 0-5000mJ/cm2。
7. The femtosecond laser controllable etching-based high-precision thin film material rapid patterning processing method as claimed in claim 1, wherein in the step (2), when the pattern is etched, the etching region needs to be filled first, and the gap between the filled lines is 10-20 μm.
8. The femtosecond laser controlled etching-based high-precision thin film material rapid patterning processing method according to claim 1, wherein in the step (2), a femtosecond laser processing system is adopted to perform etching patterning on the thin film material.
9. The femtosecond laser controllable etching-based high-precision thin film material rapid patterning processing method according to claim 8, wherein the structure of the femtosecond laser processing system comprises a femtosecond laser, an optical attenuation sheet with continuously adjustable optical density, an optical reflection lens, a galvanometer processing system, a processing control system and a displacement platform which are sequentially connected and arranged;
utilizing the femtosecond laser to emit ultraviolet laser to etch and process the thin film material;
the optical attenuation sheet is placed in a laser light path of the femtosecond laser and is vertical to the laser light path so as to accurately control the single pulse energy of the laser;
the optical reflection lenses are arranged in a plurality, and laser enters the galvanometer processing system to realize focusing after being reflected by the optical reflection lenses;
the processing control system is used for importing a drawing for drawing a pattern and finishing pattern alignment;
the displacement platform is used for clamping, fixing and accurately moving the thin film material to be processed.
10. The femtosecond laser controlled etching-based high-precision thin film material rapid patterning processing method according to claim 9, wherein the wavelength of ultraviolet laser emitted by the femtosecond laser is 343 nm;
the attenuation efficiency of the optical attenuation sheet is continuously adjustable from 17% to 99.85%;
the diameter of a laser spot of the laser focused by the vibrating mirror processing system is 10 mu m.
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