CN113785389B - 一种晶片承载盘 - Google Patents

一种晶片承载盘 Download PDF

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CN113785389B
CN113785389B CN201980095894.8A CN201980095894A CN113785389B CN 113785389 B CN113785389 B CN 113785389B CN 201980095894 A CN201980095894 A CN 201980095894A CN 113785389 B CN113785389 B CN 113785389B
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刘凯
程凯
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Enkris Semiconductor Inc
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Abstract

一种晶片承载盘，包括多个凹槽；设于凹槽内的凸起结构，其中所述凸起结构是不对称的，凸起结构的凸起部分远离晶片承载盘的圆心。使得远离晶片承载盘圆心位置的衬底表面温度升高，即使得衬底凸起的位置温度与其他位置的温度分布基本相同，整个衬底表面受热更均匀，从而衬底上形成的外延晶片波长也更均匀，提高外延晶片质量。

Description

一种晶片承载盘
技术领域
本发明涉及半导体制备领域，具体而言，涉及一种晶片承载盘。
背景技术
外延晶片的一般制备过程主要包括：将外延晶片衬底放入晶片承载盘的凹槽，连同晶片承载盘一起放入MOCVD反应室，通过设置温度、通入气体等在外延晶片衬底上生长其它外延层。
在外延晶片的制备过程中，外延晶片衬底与晶片承载盘的凹槽底部直接接触，衬底的受热方式为接触式传热，导致衬底受热程度不均匀。
发明内容
在外延晶片制备的过程中，由于制备环境、制备材料等问题，外延晶片会出现翘曲情况，相对于晶片承载盘而言，衬底越凸的地方，衬底所受的温度越低，从而整个衬底表面温度不一致，导致衬底上的外延晶片波长不均匀。
有鉴于此，本申请的一实施例中提供了一种晶片承载盘，包括：
多个凹槽；
设于凹槽内的凸起结构，其中所述凸起结构是不对称的，且凸起结构的凸起部分远离晶片承载盘的圆心。
进一步的，所述凸起结构的截面形状包括弧形、三角形、梯形、矩形中的一种或多种的组合。
进一步的，所述凸起结构包括单层或者多层结构。
进一步的，凸起结构的高度为50μm-150μm。
进一步的，所述晶片承载盘还包括：设于所述凹槽边缘的台阶结构。
进一步的，凸起结构与台阶结构在水平方向上存在间距。
进一步的，台阶结构的高度为100μm-300μm。
进一步的，所述凸起结构的高度不大于所述凹槽台阶结构的高度。
进一步的，从凸起部分的最高点，朝向凹槽的边缘方向，凸起结构的高度越来越小。
进一步的，凸起部分的最高点位于相对于凹槽的中心远离晶片承载盘的圆心的位置。
本发明中，晶片承载盘在反应室中时，气流是从晶片承载盘的圆心向外吹扫，从而在衬底上形成其它外延层的，越远离晶片承载盘的圆心，衬底表面温度越低，MO源分布越高，外延晶片波长越大，因此在置放外延衬底的凹槽底部设置不对称的凸起结构，所述凸起结构偏离晶片承载盘的圆心，使得远离晶片承载盘圆心位置的衬底表面温度较高，整个衬底表面温度更均匀，从而衬底上形成的外延晶片波长也更均匀。
为使本发明的上述和其他目的、特征和优点能更明显易懂，下文特举较佳实施例，并配合附图，作详细说明如下。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。通过附图所示，本发明的上述及其它目的、特征和优势将更加清晰。在全部附图中相同的附图标记指示相同的部分。并未刻意按实际尺寸等比例缩放绘制附图，重点在于示出本发明的主旨。
图1为本发明晶片承载盘的俯视结构图；
图2为本发明晶片承载盘中单个凹槽的侧视结构图；
图3为本发明另一实施例中单个凹槽的侧视结构图；
图4为本发明另一实施例中单个凹槽的侧视结构图；
图5为本发明另一实施例中单个凹槽的侧视结构图；
图6为本发明另一实施例中单个凹槽的侧视结构图；
图7为本发明另一实施例中单个凹槽的侧视结构图；
图8为本发明另一实施例中单个凹槽的侧视结构图；
图9为本发明实施例中单个凹槽内不对称凸起结构的俯视图；
图标：1-晶片承载盘；2-凹槽；21-台阶结构；22-凸起结构；3-晶片。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整的描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。同时，在本发明的描述中，术语“第一”、“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。在本发明实施例的描述中，将理解的是：当层(或膜)、区域、图案或结构被称作在另一衬底、另一层(或膜)、另一区域、另一垫或另一图案“上”或“下”时，其可以“直接地”或“间接地”在另一衬底、层(或膜)、区域、垫或图案上，或者还可以存在一个或更多个中间层。已经参照附图描述了层的这种位置。出于方便或清楚的目的，附图中所示出的每个层的厚度和尺寸可能被放大、省略或示意性地绘制。此外，元件的尺寸不完全反映实际尺寸。
在外延晶片制备的过程中，由于制备环境、制备材料等问题，外延晶片会出现翘曲情况，相对于晶片承载盘而言，衬底越凸的地方，衬底所受的温度越低，从而整个衬底表面温度不一致，导致衬底上的外延晶片波长不均匀，影响外延晶片质量。
针对上述问题，本发明提供了一种晶片承载盘，包括：
多个凹槽2；
设于凹槽2内的凸起结构22，其中所述凸起结构22是不对称的，且凸起结构22的凸起部分远离晶片承载盘1的圆心。
进一步的，所述晶片承载盘还包括：设于所述凹槽2边缘的台阶结构21。
如图1所示晶片承载盘1的俯视图，图中O点为晶片承载盘1的圆心。本实施例中，所述晶片承载盘上设有3个凹槽2用来置放晶片3，其它实施例中，所述晶片承载盘上的凹槽2的个数，可根据晶片的尺寸大小来设置，本发明对晶片承载盘1上凹槽2的个数不做限制。
图2-7给出了晶片承载盘1内单个凹槽的截面结构图，凹槽2的边缘可设置台阶结构21，所述台阶结构21用来置放晶片3，使得晶片3与凹槽2的底部之间存在间距，晶片3与凹槽2之间是辐射导热而非接触导热，促进晶片3表面的温度均匀性。所述凹槽2的底部设有凸起结构22，所述凸起结构22是不对称的，凸起结构22的凸起部分并不置于晶片3的圆心，而是远离整个晶片承载盘1的圆心O。
进一步的，所述凸起结构22的截面形状包括弧形、三角形、梯形、矩形中的一种或多种的组合，其中所述凸起结构包括单层或者多层结构。具体的，所述凸起结构22是弧形的，如图2所示；可以是三角形的，如图3所示；可以是梯形的，如图4所示。进一步的，所述凸起结构22可以是矩形的，所述凸起结构22包括双层的矩形，如图5所示，也可以包括三层的矩形，如图6所示；可以理解的是，还可以包括其它层数，在此不做限制。
其它实施例中，所述凸起结构22还包括弧形与矩形的结合，如图7所示，也可以是其它形状组合，可以理解的是，只要保证凸起结构整体是不对称的，凸起结构的凸起部分远离晶片承载盘1的圆心O，使得在晶片3变凸的情况下，凸起结构22的凸起部分提高晶片3凸出部分的受热温度即可。
为避免赘述，图3-图7给出的都是凹槽AO的截面结构图。
本发明中，所述凸起结构22是不对称的，从AO截面来看，整个弧形结构的凸起部分远离整个晶片承载盘1的圆心O。上述图示给出了凸起结构的截面形状，为了便于对本案的理解，图9给出了所述凸起结构的俯视图，图9给出的是等高线图，图中O’处为凸起结构22的最高点。图9中，以O’为中心，向凹槽的边缘方向，凸起结构22的高度越来越小。应当理解的是，本案给出凸起结构的等高线图，目的在于本领域技术人员理解本案凸起结构22的三维立体形状，并不对凸起结构22的高度h的具体变化做限制。所述凸起结构的俯视图中的等高线还可以是椭圆形的，本案对所述凸起结构的俯视图不做限制，只要满足所述凸起结构的凸起部分远离晶片承载盘1的圆心即可。
进一步的，所述凸起结构22与所述台阶结构21在水平方向上可存在间距W，如图8所示，所述间距W大小可以根据制备环境温度分布的最优解来进行设置。
本实施例中，所述凸起结构22与晶片3之间存在间隙，如图8所示，即所述凸起结构22的高度h不大于所述凹槽台阶结构21的高度H，避免凸起结构22与晶片3之间的接触式传热，导致晶片3的受热不均匀。
进一步的，所述凸起结构22的高度h为50μm-150μm，所述台阶结构21的高度H为100μm-300μm。
通过本发明的改进，当衬底置于晶片承载盘台阶结构上，将整个晶片承载盘置于反应室中时，所述反应室中的气流通过晶片承载盘的圆心向周边吹入气流，从而在衬底上形成其它外延层，越远离晶片承载盘的圆心，MO源分布越高，衬底在远离晶片承载盘的圆心位置凸起，衬底凸起的地方温度较于其它位置较小，外延晶片波长较大。因此在置放外延衬底的凹槽底部设置不对称的凸起结构，所述凸起结构的凸起部分远离晶片承载盘的圆心，使得远离晶片承载盘圆心位置的衬底表面温度升高，即使得衬底凸起的位置温度与其他位置的温度分布基本相同，整个衬底表面受热更均匀，从而衬底上形成的外延晶片波长也更均匀，提高外延晶片质量。
还需要说明的是，在本发明的描述中，除非另有明确的规定和限定，术语“设置”、“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。
在本发明的描述中，需要说明的是，术语“圆心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，或者是该发明产品使用时惯常摆放的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”等仅用于区分描述，而不能理解为指示或暗示相对重要性。
以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (9)

1.一种晶片承载盘，其特征在于，包括：
多个凹槽，所述多个凹槽分布在晶片承载盘的圆心的周围，其中，在所述晶片承载盘位于反应室中的情况下，所述反应室中的气流通过所述晶片承载盘的圆心向周边吹入气流，位于所述凹槽中的衬底在远离所述晶片承载盘的圆心位置凸起；
设于所述凹槽内的凸起结构，其中所述凸起结构是不对称的，所述凸起结构的凸起部分远离所述晶片承载盘的圆心，从所述凸起部分的最高点，朝向所述凹槽的边缘方向，所述凸起结构的高度越来越小。
2.根据权利要求1所述的晶片承载盘，其特征在于，所述凸起结构的截面形状包括弧形、三角形、梯形、矩形中的一种或多种的组合。
3.根据权利要求1所述的晶片承载盘，其特征在于，所述凸起结构包括单层结构或多层结构。
4.根据权利要求1所述的晶片承载盘，其特征在于，所述凸起结构的高度为50μm-150μm。
5.根据权利要求1至4中任一项所述的晶片承载盘，其特征在于，所述晶片承载盘还包括：设于所述凹槽边缘的台阶结构。
6.根据权利要求5所述的晶片承载盘，其特征在于，所述凸起结构与所述台阶结构在水平方向上存在间距。
7.根据权利要求5所述的晶片承载盘，其特征在于，所述台阶结构的高度为100μm-300μm。
8.根据权利要求5所述的晶片承载盘，其特征在于，所述凸起结构的高度不大于所述台阶结构的高度。
9.根据权利要求1所述的晶片承载盘，其特征在于，所述凸起部分的最高点位于相对于所述凹槽的中心远离所述晶片承载盘的圆心的位置。
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