TWM545140U - 用於在cvd或pvd反應器之製程室中固持基板之裝置 - Google Patents

用於在cvd或pvd反應器之製程室中固持基板之裝置 Download PDF

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TWM545140U
TWM545140U TW105209612U TW105209612U TWM545140U TW M545140 U TWM545140 U TW M545140U TW 105209612 U TW105209612 U TW 105209612U TW 105209612 U TW105209612 U TW 105209612U TW M545140 U TWM545140 U TW M545140U
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recess
groove
carrier
section
support
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詹姆士 奧多德
丹尼爾 克拉森斯
奧利維爾 費隆
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愛思強歐洲公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
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Description

用於在CVD或PVD反應器之製程室中固持基板之裝置
本創作係有關於一種用於在CVD(Chemical Vapor Deposition)或PVD(Physical Vapor Deposition)反應器之製程室中固持至少一基板之裝置，在該裝置之扁平頂面上設有至少一由至少一定位側面界定之載槽以容置該至少一基板，其中該載槽具有載槽底部，一承凸在鄰近該載槽底部之鄰接該至少一定位側面的邊緣處凸出於該載槽底部，該承凸形成一被側壁包圍之支承面/支承區，該支承面/支承區位於一支承平面內，該支承平面到包圍該承凸之槽之底部的垂直方向距離大於該支承平面到該載槽底部之垂直方向距離。
US 2003/0209326 A1描述一種基座，其具有若干個用於容置一基板之載槽。每個載槽皆具有載槽底部。該底部延伸至定義載槽邊緣之定位側面。在鄰近定位側面處之載槽底部的不同周圍方向位置上設有凹陷，承凸凸出於該等凹陷，該等承凸以端面形成支承面，基板之底面貼靠在該等支承面上，使得基板懸空位於載槽中。
由US 2014/0287142 A1已知一種基座，其中平行於 邊緣延伸之肋條凸出於載槽底部，基板邊緣貼靠在該等肋條上。
由US 5,645,647已知一種基座，其中基板載位由定位側面界定。
DE 10 2012 108 986 A1描述一種CVD裝置之基板架，該基板架由具有頂面與底面之扁平盤體形成。頂面具有槽狀結構。該等結構中之每一者皆各形成一用於一圓形基板之載位。頂面之支座的邊緣區段形成定位側面，該等定位側面分別用於定位數個佈置於基板架的頂面之基板中的一者。基板邊緣支承在若干鄰接定位側面之單體式承凸上。承凸具有伸入載位之載區的區段，該區段被一溝槽包圍。支座具有三角形輪廓，彼此隔開且能將基板定位成六邊形陣列。
DE 20 2015 118 215描述一種基座，其中設有沿支座之定位側面延伸的溝槽，一承凸凸出於該溝槽。該案亦描述一種被環形槽包圍之承凸，其中該環形槽具有一橫截面經倒圓之弧部，該弧部在形成側壁之情況下與用於支承基板之支承面平滑銜接。
同類型基座主要應用於CVD反應器中，於該處形成製程室底部。基座例如以熱輻射方式自下方被加熱。輻射熱透過熱傳導而到達基座頂面，基板嵌設在形成於該處之載槽中。基座頂面上方設有製程室，該製程室之頂部由進氣機構形成。進氣機構之指向基座的排氣面具有一溫度，此溫度不同於基座之表面溫度。排氣面與基座頂面間之溫差可達數百攝氏度，因此，存在於基座與進氣機構間之溫度梯度導致有極大熱流自基座流向進氣機構。此熱流使得基座內部及載槽區域皆形成垂直方向溫度梯度。供基板懸空位於載槽底部上方之區域內的熱流不同於供基板貼靠在承凸之承面上 之區域內的熱流。另外更存在自定位側面到基板之垂直方向傳熱。
本創作之目的在於提供若干措施以最小化待塗佈之基板表面的水平溫度梯度，進而使橫向溫度分佈變均勻。
該目的透過請求項所給予之本創作而達成。各附屬項不僅為獨立項所給予之本創作的有益改良方案。各附屬項亦構成用以達成該目的之獨立改良方案。
請求項所給予之技術特徵以及下文所說明之技術特徵有助於改良基板表面之溫度均勻性。較之先前技術，下文中所提出之措施能減小在基板表面所測得的最低溫度與在同一基板表面所測得的最高溫度之差。首先且主要提出：該承凸凸出於該槽，該槽自身又設於一凹部中。該凹部在低於載區之底部、但高於該槽之底部的垂直方向水平上延伸，故該凹部之垂直方向水平係位於該槽之底部與載槽底部間。載槽底部大致扁平地在一平面內延伸。為提高基板表面之溫度均勻性，本創作進一步提出：載槽底部具有垂直方向結構，例如相對於載槽水平上升之區域以及相對於載槽水平下陷之區域。特定言之，承凸與定位側面隔開一距離。此外，包圍承凸之槽與定位側面隔開一距離。該凹部可具有第一凹部區段，該第一凹部區段佔據該槽與定位側面間之間隙。由此，凹部鄰接定位側面，使得定位側面在第一凹部區段之邊緣上延伸。第一凹部區段可與第二凹部區段相接。較佳有兩個第二凹部區段沿載位邊界之周圍方向與第一凹部區段相接，該等第二凹部區段分別鄰接定位側面。可設置(以承凸為參照)位於第一凹部區段對面之第三凹部區段。第一、第二及第三凹部區段較佳經佈置而完全包圍該槽，該槽包圍承 凸。由此，承凸連同包圍承凸之槽一起作為島狀物而位於一相對於載區水平下陷之平面內，該平面形成凹部底部。承凸特定言之與定位側面隔開，使得承凸被基板邊緣完全覆蓋。如此一來，基板底面之朝基板中心方向與基板邊緣隔開的表面區段貼靠在承凸之支承區上。該支承區為一大致呈點狀之面。此面較佳具有最大0.7mm、0.5mm或最大0.3mm之直徑。支承區之中心點與定位側面較佳隔開至少4mm。支承區可與承凸之橫截面經倒圓的側壁平滑銜接。該側壁可在一彎曲面上延伸，該面之橫截面在一圓弧線上延伸。該槽之橫截面亦可在一圓弧線上延伸。該槽形成一包圍承凸之環形溝槽。此二圓弧線以相反方向彎曲且在橫截面拐點區域彼此銜接。該槽之底部在該槽所形成之溝槽的頂點線上延伸。該槽之徑向外緣可在經倒圓或形成一斜面之情況下與凹部底部銜接。凹部底部較佳在一平面上延伸，該平面平行於載區水平且平行於支承平面。凹部底部終止於凹部邊緣，該凹部邊緣較佳由一梯形形成。凹部邊緣在形成此梯形之情況下與載槽底部區域銜接。載槽較佳被至少六個較佳彼此隔開之支座包圍，該等支座分別形成一定位側面。該等定位側面可分佈於同一條圓弧線上。但每個定位側面亦可特別在其中部具有呈直線延伸之區段。定位側面較佳在其鄰接凹部之處呈直線延伸。較佳設有六個各具有一支承面之承凸，該等承凸在載槽之較佳呈圓形的定界邊緣以內在周圍方向上以均勻的角分佈沿一圓弧線佈置。該等承凸之所有支承面皆位於支承平面內。支承平面到載槽底部之垂直方向距離較佳為400μm。該距離可介於300μm與500μm之間。槽底到支承平面之垂直方向距離可介於500μm與900μm之間。支承平面到凹部底部之垂直方向距離較佳為500μm，使得凹 部與載槽底部間之梯形約為100μm。此距離可介於300μm與700μm之間，使得該梯形既可小於100μm，但亦可大於100μm。
1‧‧‧基座
2‧‧‧載槽、載位
3‧‧‧定位側面
4‧‧‧載槽底部
5‧‧‧槽
6‧‧‧槽底
7‧‧‧槽緣
8‧‧‧承凸
9‧‧‧支承區
10‧‧‧側壁
11‧‧‧凹部
12‧‧‧凹部底部
13‧‧‧凹部邊緣
14‧‧‧拐點
15‧‧‧斜面
16‧‧‧凹部區段
17‧‧‧凹部區段
18‧‧‧凹部區段
19‧‧‧支座
20‧‧‧基板
E‧‧‧支承平面
D1‧‧‧距離
D2‧‧‧距離
D3‧‧‧距離
R1‧‧‧半徑
R2‧‧‧半徑
下面結合所附圖式闡述本創作之實施例。其中：圖1為基座1之頂面俯視圖；圖2為圖1中II部分之放大圖；圖3為圖2中III部分之放大圖；圖4為沿圖3中IV-IV線截取之剖面圖；及圖5為對應圖4之視圖，但基板20貼靠在承凸8上。
圖1示出由石墨、鉬、石英或其他合適材料構成之圓形扁平基座1。基座1具有大致扁平之頂面及大致扁平之底面。在該頂面上設有垂直方向結構，藉由該等垂直方向結構形成若干個用於一基板20之載位2。在該底面上亦可設置用於影響熱傳導之垂直方向結構。基座1應用於CVD反應器中。具有向外氣密封閉之殼體的CVD反應器披露於DE 10 2011 055 061 A1。在該殼體內部之較低高度水平上設有加熱器，其可為電阻加熱器、輻射加熱器或感應加熱器。藉由此加熱器產生熱，該熱主要以熱輻射方式被傳遞至設於加熱器上方之基座1。基座頂面上方設有製程室，透過進氣機構將製程氣體送入該製程室。該進氣機構形成製程室之上邊界且具有排氣孔，製程氣體可經由該等排氣孔流入製程室。進氣機構之指向製程室的排氣面較佳經冷卻，與此排氣面相對設置且承載基板20之基座頂面則被加熱至一溫度，此溫度比進氣機構之表面溫度高數百攝氏度。為維持此溫度梯度，需要有極大熱流自基座1流向進氣 機構。此熱流致使基座1內部形成垂直方向溫度梯度。
在基座1之頂面上設有數個分別用於承載一圓盤形基板20之載位2。每個載位2皆被總共六個大致呈三角形且彼此隔開之支座19包圍。每個載槽底部4皆具有三個定位側面3，該等定位側面沿載位2之定界邊緣的周圍方向均勻分佈。
圖2示出具有六個定位側面3之載位，該等定位側面沿周圍方向彼此隔開。每個定位側面3皆朝向圓形載槽2之中心。朝該中心方向設有直接鄰接定位側面3之凹部11。定位側面3為一垂直方向面，該垂直方向面具有外側彎曲區域以及大致呈直線延伸之中間區域。凹部11之第一凹部區段16沿定位側面3之呈直線延伸的區域延伸。第一凹部區段16位於兩第二凹部區段17之間，該等第二凹部區段與第一凹部區段16一樣直接鄰接定位側面3。
凹部11之凹部底部12在一平面上延伸，在該凹部內部設有環形槽5。如圖4中之橫截面圖所示，槽5形成具有倒圓橫截面之溝槽。該溝槽為環形溝槽，其橫截面輪廓取決於半徑R1。槽5的最深區域形成槽底6，該槽底與支承平面E隔開距離D3。槽5圍繞一中心點呈圓弧形延伸且具有徑向外側槽緣7，槽5在該槽緣處在形成一倒圓部或斜面15之情況下與凹部底部12銜接。凹部底部12平行於支承平面E延伸且與支承平面E隔開距離D2。
橫截面沿半徑R1延伸之槽5之徑向朝內的壁在拐點14處與承凸8銜接，該拐點以俯視角度觀之係描述一圍繞槽5之中心的圓弧線。承凸8具有環形側壁10，該側壁之橫截面在一具有半徑R2之弧線上延伸。側壁10與支承區9銜接，該支承區形成承凸8之中心且在支承平面E內延伸。
由此，承凸8形成凹部11之穹頂形凸起，該凸起被槽5包圍。
槽5完全被凹部11之凹部底部12環繞包圍。第三凹部區段18位於第一凹部區段16對面。以載槽2之中心點為參照，第三凹部區段18位於承凸8之徑向內側，並且第一凹部區段16位於承凸8之徑向外側。
支承區9之直徑為0.2mm。支承區9大致為一在支承平面E內延伸之平直面。
第三凹部區段18在形成繞承凸8之中心延伸之圓形凹部邊緣13的情況下鄰接大致平直之載槽底部4。載槽底部4與支承平面E隔開距離D1。該等距離較佳具有以下各值：D1=400μm；D2=500μm且D3=700μm。
圖5示出如圖4之橫截面，但符號20係用以標示貼靠在承凸8上之基板。基板20上總共有六個點各貼靠在一個承凸8上。基板20之中心區域以距離D1懸空位於載槽底部4上方。在此情況下，基板20之底面位於支承平面E內。
前述實施方案係用於說明本申請整體所包含之創作，該等創作至少透過以下特徵組合分別獨立構成相對於先前技術之進一步方案：
一種裝置，其特徵在於，該槽5在凹部11中延伸，該凹部之垂直方向水平位於該槽5之槽底6與該載槽底部4之間。
一種裝置，其特徵在於，該承凸8及/或該包圍該承凸8之槽5與該定位側面3隔開一水平距離。
一種裝置，其特徵在於，該槽5與該定位側面3間之 該水平距離被該凹部11之第一凹部區段16佔據。
一種裝置，其特徵在於該凹部11之第二凹部區段17，該等第二凹部區段與該第一凹部區段16相接且鄰接該定位側面3。
一種裝置，其特徵在於，該第一凹部區段16及該等第二凹部區段17共同與位於該第一凹部區段16對面的第三凹部區段18一起不間斷地包圍該槽5。
一種裝置，其特徵在於，該承凸8被該基板20之邊緣完全覆蓋。
一種裝置，其特徵在於，該支承區9之中心點與該定位側面3隔開至少4mm。
一種裝置，其特徵在於，該支承區9為一直徑為最大0.7mm或最大0.5mm，較佳最大0.3mm之支承平面E。
一種裝置，其特徵在於，該橫截面經倒圓之側壁10與該支承區9平滑銜接，以及/或者，該橫截面經倒圓之側壁10自該支承區9平滑延伸至該槽5之槽底6，以及/或者，該槽底6由一倒圓溝槽之頂點形成，該溝槽在形成斜面15或倒圓部之情況下與該凹部底部12銜接。
一種裝置，其特徵在於，該凹部底部12為一平行於該支承區9延伸之平面。
一種裝置，其特徵在於，該載槽2具有至少六個特定言之沿周圍方向等距分佈於一圓弧線上之承凸8。
一種裝置，其特徵在於，該支承區9與該載槽底部4間之垂直方向距離D1約為400μm，該支承區9與該凹部底部12 間之垂直方向距離D2約為500μm，並且該支承平面E與該槽底6間之垂直方向距離D3約為700μm。
所有已揭露特徵(作為單項特徵或特徵組合)皆為創作本質所在。故本申請之揭露內容亦包含相關/所附優先權檔案(在先申請副本)所揭露之全部內容，該等檔案所述特徵亦一併納入本申請之請求項。附屬項以其特徵對本創作針對先前技術之改良方案的特徵予以說明，其目的主要在於在該等請求項基礎上進行分案申請。
1‧‧‧基座
3‧‧‧定位側面
5‧‧‧槽
8‧‧‧承凸
11‧‧‧凹部
20‧‧‧基板

Claims (14)

  1. 一種用於在CVD或PVD反應器之製程室中固持至少一基板(20)之裝置，在該裝置之扁平頂面上設有至少一由至少一定位側面(3)界定之載槽(2)以容置該至少一基板(20)，其中該載槽(2)具有載槽底部(4)，一承凸(8)在鄰近該定位側面(3)處凸出於該載槽底部，該承凸(8)形成一被側壁(10)包圍之支承區(9)，該支承區(9)位於一支承平面(E)內，該支承平面(E)到包圍該承凸(8)之槽(5)之槽底(6)的垂直方向距離大於該支承平面(E)到該載槽底部(4)之垂直方向距離，其特徵在於：該槽(5)在凹部(11)中延伸，該凹部(11)之垂直方向水平位於該槽(5)之槽底(6)與該載槽底部(4)之間。
  2. 如請求項1之裝置，其中，該承凸(8)及/或該包圍該承凸(8)之槽(5)與該定位側面(3)隔開一水平距離。
  3. 如請求項2之裝置，其中，該槽(5)與該定位側面(3)間之該水平距離被該凹部(11)所具有之第一凹部區段(16)佔據。
  4. 如請求項3之裝置，其中，該凹部(11)所具有之第二凹部區段(17)與該第一凹部區段(16)相接且鄰接該定位側面(3)。
  5. 如請求項4之裝置，其中，該第一凹部區段(16)及該等第二凹部區段(17)共同與位於該第一凹部區段(16)對面的第三凹部區段(18)一起不間斷地包圍該槽(5)。
  6. 如請求項1之裝置，其中，該承凸(8)被該基板(20)之邊緣完全覆蓋。
  7. 如請求項1之裝置，其中，該支承區(9)之中心點與該定位側面(3)隔開至少4mm。
  8. 如請求項1之裝置，其中，該支承區(9)為一直徑為最大0.7mm或最大0.5mm，較佳最大0.3mm之支承平面(E)。
  9. 如請求項1之裝置，其中，為橫截面經倒圓之該側壁(10)與該支承區(9)平滑銜接。
  10. 如請求項1之裝置，其中，為橫截面經倒圓之該側壁(10)自該支承區(9)平滑延伸至該槽(5)之槽底(6)。
  11. 如請求項1之裝置，其中，該槽底(6)由一倒圓溝槽之頂點形成，該溝槽在形成斜面(15)或倒圓部之情況下與凹部底部(12)銜接。
  12. 如請求項11之裝置，其中，該凹部底部(12)為一平行於該支承區(9)延伸之平面。
  13. 如請求項1之裝置，其中，該載槽(2)具有至少六個特定言之沿周圍方向等距分佈於一圓弧線上之承凸(8)。
  14. 如請求項11之裝置，其中，該支承區(9)與該載槽底部(4)間之垂直方向距離(D1)約為400μm，該支承區(9)與該凹部底部(12)間之垂直方向距離(D2)約為500μm，並且該支承平面(E)與該槽底(6)間之垂直方向距離(D3)約為700μm。
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