CN113752146B - Chuck cleaning device, chuck bearing surface detection method and bonding equipment - Google Patents
Chuck cleaning device, chuck bearing surface detection method and bonding equipment Download PDFInfo
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- CN113752146B CN113752146B CN202111052071.2A CN202111052071A CN113752146B CN 113752146 B CN113752146 B CN 113752146B CN 202111052071 A CN202111052071 A CN 202111052071A CN 113752146 B CN113752146 B CN 113752146B
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- 238000004140 cleaning Methods 0.000 title claims abstract description 50
- 238000001514 detection method Methods 0.000 title abstract description 8
- 230000007547 defect Effects 0.000 claims abstract description 39
- 239000002245 particle Substances 0.000 claims abstract description 32
- 238000001179 sorption measurement Methods 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims description 37
- 238000005498 polishing Methods 0.000 claims description 14
- 238000012423 maintenance Methods 0.000 abstract description 10
- 235000012431 wafers Nutrition 0.000 description 110
- 239000011800 void material Substances 0.000 description 7
- 230000002159 abnormal effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/033—Other grinding machines or devices for grinding a surface for cleaning purposes, e.g. for descaling or for grinding off flaws in the surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a chuck cleaning device, a chuck bearing surface detection method and bonding equipment, wherein the chuck cleaning device comprises: a mechanical arm; the grinding disc is arranged on the mechanical arm and used for grinding the bearing surface of a chuck; an adsorption part provided to the robot arm, the adsorption part for adsorbing particles on the chuck; and the driving part is used for driving the mechanical arm to move so as to move the grinding disc and the adsorption part to the position to be cleaned of the chuck. The technical scheme of the invention can improve the defects generated in the wafer bonding structure and simultaneously reduce the maintenance load and risk.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing equipment, in particular to a chuck cleaning device, a chuck bearing surface detection method and bonding equipment.
Background
In semiconductor manufacturing technology, bonding at least two wafers together by a bonding process to increase the number of devices per unit area has been widely used.
In the wafer bonding process, if the surface of a chuck (chuck) for sucking a wafer is uneven, the bonded wafer may have an abnormal bonding structure. For example, particles on the back side of the wafer and particles formed by various parts (such as a tank chain) in motion on the bonding equipment may fall on the chuck, so that voids are generated at the same position in a bonded structure of multiple wafers after bonding; moreover, the particles on the chuck and the uneven top surface of the chuck itself may cause the local twist of the wafer bonding structure to be abnormal, thereby affecting the alignment accuracy of the subsequent photolithography process.
Taking the generation of voids in the wafer bonding structure as an example, referring to fig. 1 a-1 c and fig. 2 a-2 c, it can be seen from fig. 1a that the particle P1 is located on the top surface of the support pin 10 on the chuck, resulting in the formation of a void D1 at the bonding interface between the lower wafer 11 and the upper wafer 12 close to the particle P1, and the position of the detected void D1 is shown in fig. 2 a; as shown in fig. 1b, as the bonding frequency increases, the particles P1 move to the corners of the top surfaces of the support pins 10 under the driving force of the wafer or the suction force on the chuck, which also causes the voids D2 to be formed at the bonding interface between the lower wafer 11 and the upper wafer 12 close to the particles P1, but the voids D2 are smaller than the voids D1, as shown in fig. 2 b; as can be seen from fig. 1c, as the number of times of bonding continues to increase, the particles P1 move into the gap between the two adjacent support pins 10, and no void is formed at the bonding interface between the lower wafer 11 and the upper wafer 12, as shown in fig. 2 c. Therefore, during the wafer bonding, there may be voids at the same positions in the wafer bonding structure formed by several times of bonding, and the voids in the wafer bonding structure formed by the following several times of bonding gradually decrease until the voids disappear, thereby indicating that the voids are caused by particles on the top surface of the support pin 10 and the top surface of the support pin 10 needs to be cleaned.
At present, for the unevenness of the particles on the chuck and the top surface of the chuck, which cause the cavity and the torsion degree to be abnormal, the top surface of the chuck needs to be stopped and manually ground, and the manual operation can move the precise devices on the machine table, the force is difficult to control, the failure rate is high, and the load and the risk of maintenance are increased.
Therefore, there is a need to optimize existing methods of cleaning chucks to quickly and efficiently clean the chuck surface, reducing maintenance loads and risks.
Disclosure of Invention
The invention aims to provide a chuck cleaning device, a chuck bearing surface detection method and bonding equipment, which can improve defects generated in a wafer bonding structure and reduce maintenance load and risk.
To achieve the above object, the present invention provides a chuck cleaning device, including:
a mechanical arm;
the grinding disc is arranged on the mechanical arm and used for grinding the bearing surface of a chuck;
an adsorption part provided to the robot arm, the adsorption part for adsorbing particles on the chuck;
and the driving part is used for driving the mechanical arm to move so as to move the grinding disc and the adsorption part to the position to be cleaned of the chuck.
Optionally, the suction component comprises a vacuum line passing through the abrasive disk to align the carrying surface of the chuck.
Optionally, the chuck cleaning device further comprises a force application component, the force application component is arranged on the mechanical arm and connected with the grinding disc, and the force application component controls the grinding disc to apply the grinding force to the bearing surface of the chuck.
Optionally, the chuck cleaning device further comprises a first lifting driving part disposed on the mechanical arm, and the first lifting driving part is used for driving the grinding disc to lift.
Optionally, the chuck cleaning device further comprises a support base, a guide rail and a moving part, wherein the guide rail is arranged on the support base, and the moving part moves along the guide rail.
Optionally, the driving part includes a second lifting driving part, the second lifting driving part is disposed on the support seat and connected to the moving part, and the second lifting driving part is configured to drive the moving part to move along the guide rail, so as to drive the mechanical arm to lift.
Optionally, the driving part further includes a rotation driving part, the rotation driving part is disposed on the moving part and connected to the mechanical arm, and the rotation driving part is configured to drive the mechanical arm to rotate.
Optionally, the driving component further includes a telescopic driving component, the telescopic driving component is disposed on the mechanical arm, and the telescopic driving component is configured to drive the mechanical arm to extend and retract.
Optionally, the chuck includes a chuck body and a plurality of support pins spaced apart from each other in the chuck body and having support surfaces forming the bearing surface.
The invention also provides a method for detecting the bearing surface of the chuck, which comprises the following steps:
placing a wafer on a chuck, and performing a wafer bonding process to form a wafer bonding structure;
detecting defects in the formed first wafer bonding structure;
judging whether the defects in the first wafer bonding structure exceed a set specification, and if so, detecting the defects in the formed second wafer bonding structure;
and judging whether the defects in the second wafer bonding structure exceed a set specification or not, judging whether the positions of the defects in the second wafer bonding structure and the first wafer bonding structure are the same or not, and if so, cleaning the chuck by using the chuck cleaning device.
Optionally, the defect comprises a degree of twist and/or a void.
Optionally, the defect is a twist degree, and the method for detecting the twist degree of the first wafer bonding structure and the second wafer bonding structure includes:
measuring the bonding offset of the first wafer bonding structure and the second wafer bonding structure;
and calculating the torsion according to the bonding offset.
The present invention also provides a bonding apparatus, comprising: the chuck cleaning device is used for cleaning the chuck.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
1. the chuck cleaning device comprises a mechanical arm; the grinding disc is arranged on the mechanical arm and used for grinding the bearing surface of a chuck; an adsorption part disposed on the robot arm, the adsorption part for adsorbing particles on the chuck; and a driving part for driving the robot arm to move the abrasive disk and the suction part to a position to be cleaned of the chuck, so that defects generated in the wafer bonding structure can be improved while reducing maintenance load and risk.
2. According to the method for detecting the bearing surface of the chuck, the defects in the first wafer bonding structure and the second wafer bonding structure formed by the wafer bonding process are detected, and the chuck is cleaned by the chuck cleaning device when the defects are judged to exceed the set specification and the positions of the defects in the second wafer bonding structure and the first wafer bonding structure are the same, so that whether the chuck needs to be cleaned or not can be timely confirmed, the bearing surface of the chuck can be quickly and effectively cleaned when the chuck needs to be cleaned, the defects generated in the wafer bonding structure produced in the follow-up production process are improved, and the maintenance load and the risks are reduced.
3. The bonding equipment comprises the chuck cleaning device provided by the invention, so that the chuck can be cleaned quickly and effectively, the bonding process can be carried out normally, the defects generated in a wafer bonding structure are reduced, and the maintenance load and risk are reduced.
Drawings
FIGS. 1 a-1 c are schematic diagrams illustrating the effect of particles on wafer bonding at different positions on a chuck;
FIGS. 2 a-2 c are diagrams of void variation detection in the corresponding wafer bonding structures of FIGS. 1 a-1 c;
FIG. 3 is a schematic view of a chuck cleaning device according to an embodiment of the present invention;
FIG. 4 is a flowchart illustrating a method for inspecting the bearing surface of a chuck according to an embodiment of the present invention.
Wherein the reference numerals of figures 1a to 4 are as follows:
10-support pins; 11-lower layer wafer; 12-upper wafer; 21-a mechanical arm; 211-a fixation section; 212-a telescoping section; 22-a grinding disc; 23-an adsorption component; 241-a second elevation drive component; 242-a rotary drive member; 243-telescopic driving member; 25-a force applying member; 26-a first elevation drive component; 27-a support base; 271-a guide rail; 272-a moving part; 30-a chuck body; 31-support pin.
Detailed Description
To make the objects, advantages and features of the present invention more apparent, the chuck cleaning device, the method for inspecting the bearing surface of the chuck, and the bonding apparatus according to the present invention will be described in further detail. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is provided for the purpose of facilitating and clearly illustrating embodiments of the present invention.
An embodiment of the present invention provides a chuck cleaning device, including a robot arm; the grinding disc is arranged on the mechanical arm and used for grinding the bearing surface of a chuck; an adsorption part provided to the robot arm, the adsorption part for adsorbing particles on the chuck; and the driving part is used for driving the mechanical arm to move so as to move the grinding disc and the adsorption part to the position to be cleaned of the chuck.
The chuck cleaning device is described in detail below with reference to fig. 3.
In the wafer bonding process, when a wafer is placed on the chuck, particles on the back surface of the wafer or particles formed by various parts (such as a tank chain) on a bonding device in motion can fall on the chuck, so that the carrying surface of the chuck is uneven; also, the bearing surface of the chuck itself may be uneven after extended use. Since the unevenness of the bearing surface of the chuck may cause defects in a bonded structure of a wafer formed by bonding, a cleaning device for the chuck is required to clean the bearing surface of the chuck so as to make the bearing surface of the chuck flat.
The grinding disc 22 is disposed on the mechanical arm 21, and the grinding disc 22 is used for grinding the bearing surface of the chuck to remove particles on the bearing surface and the relatively protruding portion of the bearing surface itself, so as to flatten the bearing surface of the chuck. In this embodiment, the carrying surface is a surface for supporting a wafer. The following description will be made by taking as an example a case where the chuck is provided to include an upper chuck and a lower chuck which are oppositely provided in the vertical direction, and the bearing surface may be a top surface of the lower chuck or a bottom surface of the upper chuck.
The adsorption part 23 is provided to the robot arm 21, and the adsorption part 23 is used to adsorb particles on the chuck. Since particles are generated when grinding the portion of the chuck where the carrying surface is relatively protruded, the suction member 23 sucks and removes the particles together with the particles falling on the chuck.
The chuck may include a chuck body 30 and a plurality of support pins 31, the plurality of support pins 31 are spaced apart from each other on the chuck body 30, and the wafer is placed on a support surface of the plurality of support pins 31, that is, the support surface forms the bearing surface. The grinding disk 22 is used for grinding the supporting surfaces of the supporting pins 31 so as to grind the supporting surface of each supporting pin 31 to be flush and remove particles on the supporting surface of the supporting pin 31; the adsorption member 23 can adsorb and remove particles on the support surfaces of the support pins 31 and particles in the gaps between the adjacent support pins 31.
The grinding disk 22 has a hardness greater than that of the support pin 31 so that the grinding disk 22 can grind away the support surface of the support pin 31.
The chuck cleaning device further comprises a first lifting driving part 26 arranged on the mechanical arm 21, the first lifting driving part 26 is connected with the grinding disc 22, so that the first lifting driving part 26 is used for driving the grinding disc 22 to lift, and further the distance between the grinding disc 22 and the bearing surface of the chuck can be automatically finely adjusted, and the bearing surface of the chuck are attached during grinding and are kept away after the grinding is finished.
Chuck cleaning device still includes application of force part 25, set up in on the arm 21 and with abrasive disc 22 is connected, application of force part 25 control abrasive disc 22 is right the grinding power size that the loading end of chuck was applyed makes it is right the grinding power that the loading end of chuck was applyed realizes controllably, avoids leading to grinding inadequately or grind excessively, has improved the grinding precision. In the following chuck, for example, when the polishing disk 22 is lowered to contact with the support surface of the support pin 31, the urging member 25 urges the polishing disk 22 downward so that the polishing disk 22 urges the support pin 31 for polishing. Also, during the grinding process, the grinding disk 22 is continuously rotated.
The suction member 23 includes a vacuum line that can pass through the polishing disk 22 to align with the carrying surface of the chuck, so that the polished particles can be directly sucked and removed by the vacuum line after the polishing disk 22 polishes the position to be cleaned of the carrying surface of the chuck without moving the vacuum line, thereby increasing the speed of cleaning the chuck.
In other embodiments, the vacuum line may be disposed at the periphery of the polishing disc 22, and the vacuum line performs suction operation along the polishing path of the polishing disc 22 on the carrying surface of the chuck.
The chuck cleaning device further comprises a support seat 27, a guide rail 271 and a moving part 272, wherein the guide rail 271 is arranged on the support seat 27, the guide rail 271 extends in a direction perpendicular to the support seat 27, and the moving part 272 can move up and down along the guide rail 271.
The driving part is used for driving the mechanical arm 21 to move so as to move the grinding disc 22 and the adsorption part 23 to the position to be cleaned of the chuck.
The driving part includes a second lifting driving part 241, the second lifting driving part 241 is disposed on the supporting seat 27 and connected to the moving part 272, and the second lifting driving part 241 is used for driving the moving part 272 to move up and down along the guide rail 271, so as to drive the mechanical arm 21 to lift and lower, so that the grinding disc 22 and the adsorption part 23 are far away from or close to the bearing surface of the chuck.
The driving part further includes a rotation driving part 242 disposed on the moving part 272 and connected to the robot arm 21, and the rotation driving part 242 is configured to drive the robot arm 21 to rotate.
The moving member 272 may be directly connected to the robot arm 21, or the moving member 272 may be connected to the robot arm 21 through the rotation driving member 242, so that the robot arm 21 is lifted and lowered by the up and down movement of the moving member 272 along the guide 271.
The driving means further includes a telescopic driving means 243 disposed on the robot arm 21, and the telescopic driving means 243 is configured to drive the robot arm 21 to extend and retract. The robot arm 21 may include a fixing portion 211 and an expansion portion 212, and the expansion driving member 243 may be disposed in the fixing portion 211 and connected to the expansion portion 212 to drive the expansion portion 212 to expand and contract.
The polishing platen 22, the suction member 23, the biasing member 25, and the first elevation driving member 26 may be provided on the expansion and contraction part 212, and the rotation driving member 242 may be provided on the fixing part 211.
The second lifting drive part 241, the rotation drive part 242 and the telescopic drive part 243 are matched with each other, so that the grinding disc 22 and the adsorption part 23 can be automatically moved to the position of the chuck to be cleaned.
In summary, the present invention provides a chuck cleaning device, including: a mechanical arm; the grinding disc is arranged on the mechanical arm and used for grinding the bearing surface of a chuck; an adsorption part provided to the robot arm, the adsorption part for adsorbing particles on the chuck; and the driving part is used for driving the mechanical arm to move so as to move the grinding disc and the adsorption part to the position to be cleaned of the chuck. The chuck cleaning device provided by the invention can enable the bearing surface of the cleaned chuck to be flat, reduce the defects generated in the wafer bonding structure, and meanwhile, can quickly and effectively clean the bearing surface of the chuck, thereby reducing the maintenance load and risk.
An embodiment of the present invention provides a method for detecting a bearing surface of a chuck, referring to fig. 4, the method for detecting a bearing surface of a chuck includes:
step S1, a wafer is placed on a chuck, and a wafer bonding process is executed to form a wafer bonding structure. The upper chuck and the lower chuck are arranged oppositely from top to bottom, the upper chuck adsorbs an upper wafer, the lower chuck adsorbs a lower wafer, and the upper wafer and the lower wafer are bonded to form a wafer bonding structure.
And S2, detecting defects in the formed first wafer bonding structure.
S3, judging whether the defects in the first wafer bonding structure exceed a set specification, if not, indicating that the bearing surface of the chuck is not abnormal and does not need to be cleaned, and continuing to execute the wafer bonding process; if so, further confirmation is required, the wafer bonding process can be suspended, and defects in the formed second wafer bonding structure can be detected.
S4, judging whether the defect in the second wafer bonding structure exceeds a set specification or not, judging whether the positions of the defects in the second wafer bonding structure and the first wafer bonding structure are the same or not, if not, indicating that the defect in the first wafer bonding structure is a single event, and continuing to execute the wafer bonding process; if so, judging that the bearing surface of the chuck is abnormal, stopping executing the wafer bonding process, cleaning the chuck by using the chuck cleaning device, and continuing executing the wafer bonding process after cleaning is finished.
According to different frequencies of detecting defects, the first wafer bonding structure refers to a first wafer or a certain wafer in a certain batch, and the second wafer bonding structure refers to a first wafer after the first wafer bonding structure or any other wafer after the first wafer bonding structure. If the carrying surface of the chuck is abnormal to be a particle, the position of the particle may cause a defect in the second wafer bonding structure when forming any other wafer (for example, in the embodiment shown in fig. 3, the particle is located on the supporting surface of the supporting pin 31, not in the gap between the adjacent supporting pins 31).
The defects in the first wafer bonding structure and the second wafer bonding structure may include twist and/or voids.
If the defect is a void, in the step S2 and the step S3, an ultrasonic detection technique of a C-SAM (ultrasonic detection) machine may be adopted to detect the void in the first wafer bonding structure and the second wafer bonding structure; in the step S3 and the step S4, it is determined whether or not the size, the number, and the like of the cavities exceed a set specification (for example, the set specification of the cavity diameter is 100 μm).
If the defect is a twist degree, in the step S2 and the step S3, the method for detecting the twist degree of the first wafer bonding structure and the second wafer bonding structure may include: firstly, measuring bonding offset of a first wafer bonding structure and a second wafer bonding structure, wherein the bonding offset of a plurality of coordinate position points on the first wafer bonding structure and the second wafer bonding structure can be measured by taking the circle centers of the first wafer bonding structure and the second wafer bonding structure as coordinate origin points; then, the degree of torsion is calculated from the bonding offset.
Measuring bonding offset delta at coordinate position point (x, y) on the first wafer bonding structure x And Δ y For example, the step of calculating the degree of torsion according to the bonding offset includes: for the bonding offset delta x And Δ y Performing modeling processing to obtain the following formula (1) and formula (2), and e in the formula (1) and formula (2) x And e y I.e. the degree of torsion.
Δ x ＝T x +M*x-R*y+e x (1)
Δ y ＝T y +M*y+R*x+e y (2)
Wherein, delta x Is the bonding offset, Δ, in the x-direction of the abscissa y Is the amount of bonding offset in the y-direction of the ordinate, T x And T y Respectively, the mean values of bonding offset values of all coordinate position points on the first wafer bonding structure in the x direction and the y direction, M is the expansion degree of the first wafer bonding structure, R is a rotation angle, e x And e y The twisting degrees of the coordinate position point (x, y) on the first wafer bonding structure in the x direction and the y direction are respectively. And the bonding offset, the expansion degree, the rotation angle and the torsion degree respectively refer to the bonding offset, the expansion degree and the torsion degree of the upper wafer relative to the lower wafer in the first wafer bonding structure.
In step S3 and step S4, if the degree of torsion of a certain position point or a plurality of position points on the first wafer bonding structure and the second wafer bonding structure exceeds a standard deviation σ that is N times the degree of torsion of a surrounding position (i.e., N × σ, for example, N is 3 or 6), it is determined that the degree of torsion in the first wafer bonding structure and the second wafer bonding structure exceeds a set specification.
In addition, referring to fig. 3, taking the cleaning of the lower chuck by the chuck cleaning device as an example, the cleaning step may include: first, the robot arm 21 moves the abrasive disk 22 and the suction member 23 to the position to be cleaned of the lower chuck by cooperation of the second elevation driving part 241, the rotation driving part 242, and the extension driving part 243; then, the grinding disk 22 is driven by the first lifting drive member 26 to descend to be attached to the bearing surface, that is, to be attached to the supporting surface of the supporting pin 31; next, the grinding disk 22 is urged by the urging member 25 against the support surface of the support pin 31, the grinding disk 22 is rotated to grind the position to be cleaned of the support pin 31, after grinding for a certain period of time, the grinding disk 22 is driven to ascend by the first elevation driving member 26, particles on the support surface of the support pin 31 and in the gap between adjacent support pins 31 are adsorbed by the adsorption member 23, and after adsorption for a certain period of time, the grinding disk 22 and the adsorption member 23 are moved away from the position of the lower chuck by the robot arm 21 by cooperation of the second elevation driving member 241, the rotation driving member 242, and the expansion driving member 243.
And, the chuck cleaning device is connected with a control end, the control end sets up the corresponding parameter (for example lift distance, rotation angle, application of force size etc.) of each part in the chuck cleaning device to realize to the self-cleaning of chuck has avoided the problem that moves the precision device on the board and the difficult control of dynamics that manual cleaning leads to, thereby has reduced the load and the risk of maintenance.
After the above cleaning step for the chuck is completed, the steps S1 to S4 may be repeatedly performed to determine whether the chuck is cleaned.
In summary, according to the method for detecting the bearing surface of the chuck provided by the invention, the defects in the first wafer bonding structure and the second wafer bonding structure formed by the wafer bonding process are detected, and the chuck is cleaned by using the chuck cleaning device when the defects are judged to exceed the set specification and the positions of the defects in the second wafer bonding structure and the first wafer bonding structure are the same, so that whether the chuck needs to be cleaned can be timely determined, the bearing surface of the chuck can be quickly and effectively cleaned when the chuck needs to be cleaned, the defects generated in the subsequently produced wafer bonding structure are reduced, and the maintenance load and the risks are reduced.
An embodiment of the present invention provides a bonding apparatus, including: the chuck cleaning device is used for cleaning the chuck. Wherein, if the chuck divide into relative upper chuck and the lower chuck that sets up from top to bottom, then chuck cleaning device can be used for the cleanness go up the chuck with lower chuck.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (11)
1. A method for detecting a bearing surface of a chuck is characterized by comprising the following steps:
placing a wafer on a chuck, and executing a wafer bonding process to form a wafer bonding structure;
detecting defects in the formed first wafer bonding structure;
judging whether the defects in the first wafer bonding structure exceed a set specification, and if so, detecting the defects in the formed second wafer bonding structure;
judging whether the defects in the second wafer bonding structure exceed set specifications or not, judging whether the positions of the defects in the second wafer bonding structure and the first wafer bonding structure are the same or not, if so, cleaning the chuck by using a chuck cleaning device, wherein the chuck cleaning device comprises:
a mechanical arm;
the grinding disc is arranged on the mechanical arm and used for grinding the bearing surface of a chuck;
an adsorption part disposed on the robot arm, the adsorption part configured to adsorb the particles on the chuck;
and the driving part is used for driving the mechanical arm to move so as to move the grinding disc and the adsorption part to the position to be cleaned of the chuck.
2. The method of inspecting the bearing surface of a chuck of claim 1, wherein said defects comprise twist and/or voids.
3. The method of claim 2, wherein the defect is a degree of twist, and the step of detecting the degree of twist of the first wafer bond structure and the second wafer bond structure comprises:
measuring the bonding offset of the first wafer bonding structure and the second wafer bonding structure;
and calculating the torsion according to the bonding offset.
4. The method of claim 1 wherein the suction device comprises a vacuum line extending through the abrasive disk to align the bearing surface of the chuck.
5. The method of claim 1 wherein the chuck cleaning device further comprises a force applying member disposed on the robot arm and coupled to the polishing disk, the force applying member controlling the amount of polishing force applied by the polishing disk to the load-bearing surface of the chuck.
6. The method of claim 1, wherein the chuck cleaning device further comprises a first elevation driving unit disposed on the robot arm, the first elevation driving unit being configured to drive the polishing disc to elevate.
7. The method of inspecting the bearing surface of a chuck as claimed in claim 1, wherein said chuck cleaning device further comprises a support base, a guide rail and a moving member, said guide rail being disposed on said support base, said moving member moving along said guide rail.
8. The method of claim 7, wherein the driving member comprises a second lifting driving member, the second lifting driving member is disposed on the supporting base and connected to the moving member, and the second lifting driving member is configured to drive the moving member to move along the guiding rail to lift the robot.
9. The method of inspecting the bearing surface of a chuck of claim 7 wherein said drive assembly further comprises a rotational drive assembly disposed on said motion assembly and coupled to said robot arm, said rotational drive assembly configured to rotate said robot arm.
10. The method of claim 1, wherein the drive assembly further comprises a telescoping drive assembly disposed on the robot arm, the telescoping drive assembly configured to drive the robot arm to telescope.
11. The method of inspecting the bearing surface of the chuck as claimed in any one of claims 1 to 10, wherein the chuck comprises a chuck body and a plurality of support pins spaced apart from each other on the chuck body and having support surfaces forming the bearing surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111052071.2A CN113752146B (en) | 2021-09-08 | 2021-09-08 | Chuck cleaning device, chuck bearing surface detection method and bonding equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111052071.2A CN113752146B (en) | 2021-09-08 | 2021-09-08 | Chuck cleaning device, chuck bearing surface detection method and bonding equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113752146A CN113752146A (en) | 2021-12-07 |
| CN113752146B true CN113752146B (en) | 2022-11-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111052071.2A Active CN113752146B (en) | 2021-09-08 | 2021-09-08 | Chuck cleaning device, chuck bearing surface detection method and bonding equipment |
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| JP4387557B2 (en) * | 2000-05-16 | 2009-12-16 | 株式会社ディスコ | Method and apparatus for cleaning a chuck table in a grinding apparatus |
| CN102983144B (en) * | 2012-11-30 | 2015-02-11 | 格科微电子（上海）有限公司 | Wafer level packaging method of image sensor |
| CN203973387U (en) * | 2014-07-15 | 2014-12-03 | 中芯国际集成电路制造(北京)有限公司 | A kind of grinding pad cleaning device |
| CN108336002A (en) * | 2018-03-16 | 2018-07-27 | 德淮半导体有限公司 | The method of clearing apparatus and cleaning wafer, mechanical arm |
| CN208806242U (en) * | 2018-09-17 | 2019-04-30 | 武汉新芯集成电路制造有限公司 | A kind of fixed structure improving wafer bonding cavity |
| CN109461670B (en) * | 2018-11-08 | 2021-01-22 | 德淮半导体有限公司 | Method and apparatus for detecting wafer bonding defects |
| CN110289222B (en) * | 2019-05-08 | 2021-11-16 | 武汉新芯集成电路制造有限公司 | Bonding equipment, and bonding wave detection method and system |
| CN112276784A (en) * | 2019-07-24 | 2021-01-29 | 中芯国际集成电路制造(上海)有限公司 | Wafer chuck cleaning device |
| CN110620104B (en) * | 2019-09-20 | 2021-10-26 | 武汉新芯集成电路制造有限公司 | Test piece, manufacturing method thereof and detection method of wafer bonding defects |
| CN112820629A (en) * | 2020-12-31 | 2021-05-18 | 上海新昇半导体科技有限公司 | Wafer grinding method |
| CN113299544B (en) * | 2021-05-25 | 2024-02-27 | 武汉新芯集成电路制造有限公司 | Wafer bonding method and wafer bonding equipment |
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Address after: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee after: Wuhan Xinxin Integrated Circuit Co.,Ltd. Country or region after: China Address before: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee before: Wuhan Xinxin Semiconductor Manufacturing Co.,Ltd. Country or region before: China |