CN113748530A - Improved top-emitting device with active organic film and method for processing substrate - Google Patents
Improved top-emitting device with active organic film and method for processing substrate Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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Abstract
A method of fabricating an organic layer stack on a substrate is described. The method includes depositing an organic layer stack of one or more organic layers over a substrate; exposing a substrate of an organic layer stack having one or more organic layers to a material that produces a protective member over the organic layer stack; and depositing a transparent conductive electrode over the organic layer stack with the protective member.
Description
Technical Field
Embodiments described herein relate generally to processes for fabricating electro-optic devices, and in particular top-emitting devices, having an active organic layer stack.
Background
The coated substrate can be used in several applications and in several technical fields. For example, the coated substrate may be used in the field of Organic Light Emitting Diode (OLED) devices. OLEDs may be used to manufacture television screens, computer displays, cell phones, other handheld devices, and the like for displaying information. An OLED device, such as an OLED display, may include one or more layers of organic material between two electrodes deposited on a substrate. The OLED device may comprise a stack of several organic materials, which are for example evaporated in a vacuum chamber of a processing apparatus.
Top-emitting OLED devices offer some advantages, such as the opportunity for a larger light emitting area. Therefore, the aperture ratio of the display can be increased. This may result in improved display brightness due to the enlarged emission surface. For top-emitting OLED devices, a transparent conductive layer is provided on top of the device. For example, a transparent cathode may be provided as a front contact. The transparent cathode may be a common electrode for the individual pixels. The transparent common electrode may be offset from the pixel active area between the transparent conductive electrode and the individual pixel electrodes.
Top-emitting OLED devices often suffer OLED damage when coated on top of the device, i.e. a conductive front contact over an organic layer or stack of organic layers. Therefore, it can be difficult to obtain a damage-free OLED device for mass production of top-emitting OLED devices.
Accordingly, there is a need for improved methods of manufacturing OLED devices and improved OLED devices.
Disclosure of Invention
In view of the above, a method of processing a substrate and a layer stack for an OLED device is provided. Other aspects, benefits and features of the present disclosure are apparent from the claims, description and drawings.
According to one embodiment, a method of fabricating an organic layer stack on a substrate is provided. The method includes depositing an organic layer stack of one or more organic layers over a substrate; exposing a substrate of an organic layer stack having one or more organic layers to a material that produces a protective member over the organic layer stack; and depositing a transparent conductive electrode over the organic layer stack with the protective member.
According to one embodiment, a method of fabricating a top-emitting OLED device on a large area substrate is provided. The method includes depositing a reflective layer over a large area substrate; depositing an organic layer stack of one or more organic layers over the reflective layer; exposing a substrate of an organic layer stack having one or more organic layers to a material that produces a protective member over the organic layer stack; and sputtering a transparent conductive oxide over the organic layer stack with the protective member.
According to one embodiment, a layer stack for an active organic light emitting device is provided. The layer stack comprises a substrate; an organic layer stack having one or more organic material layers; a protective member over the organic layer stack; and a transparent conductive electrode over the protective member.
Drawings
So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of scope, for the embodiments may admit to other equally effective embodiments.
Fig. 1 depicts a schematic cross-sectional view of an exemplary OLED device according to an embodiment of the present disclosure;
2A-2D depict schematic cross-sectional views of a workpiece processed according to an embodiment of the present disclosure;
3A-3D depict schematic cross-sectional views of a workpiece processed according to an embodiment of the present disclosure;
fig. 4 depicts a flow chart depicting a method of processing a substrate according to an embodiment of the present disclosure; and
fig. 5 depicts a flow chart depicting a method of processing a substrate according to an embodiment of the present disclosure.
To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
Detailed Description
Reference will now be made in detail to the various embodiments, one or more examples of which are illustrated in each figure. The examples are provided by way of illustration and are not intended as limitations. For example, features illustrated or described as part of one embodiment can be used on or in conjunction with any other embodiment to yield yet a further embodiment. The present disclosure is intended to embrace such modifications and variations. Many of the details, dimensions, angles and other features shown in the figures are merely illustrative of particular embodiments. Accordingly, other embodiments may have other details, components, and features without departing from the spirit or scope of the present disclosure. In addition, other embodiments of the disclosure may be practiced without several of the details described below.
In the following description of the drawings, the same reference numerals indicate the same or similar components. In general, only the differences with respect to the individual embodiments are described. Unless otherwise specified, descriptions of a part or aspect in one embodiment may also apply to a corresponding part or aspect in another embodiment.
Embodiments of the present disclosure provide a protective member for an organic film stack. The protective component may be deposited over or on the organic layer stack or a layer stack having some layers containing organic material, for example directly thereon. The protective member can reduce or prevent damage to one or more organic layers during subsequent deposition of the transparent conductive layer, for example, as a front contact of an OLED device. The transparent conductive layer or conductive layer may have a single layer absorbance of 30% or less, such as 10% or less. For example, a transparent cathode may be provided as a front contact. The conductive layer may be provided by a transparent conductive material, such as a Transparent Conductive Oxide (TCO), or by a thin conductive layer.
According to one embodiment, a method of processing a substrate is provided. The method includes depositing an organic layer stack of one or more organic layers over a substrate. A substrate of an organic layer stack having one or more organic layers is exposed to a material that produces a protective member over the organic layer stack. A transparent conductive electrode, such as a transparent conductive layer or a conductive layer, is deposited over the organic layer stack with the protective member.
According to embodiments of the present disclosure, which may be combined with embodiments described herein, one or more organic layers may be deposited by a vacuum deposition process, such as a PVD process, e.g. evaporation, or by other deposition techniques, such as printing, e.g. inkjet printing.
Fig. 1 depicts an exemplary apparatus 100. The device 100 may be, for example, an electro-optical device for emitting light. For example, the device may be a display. The device 100 includes one or more active organic material layers for photon emission.
Fig. 1 shows a substrate 102. A reflective layer 104 may be provided over the substrate. The reflective layer reflects light emitted by the OLED material. Thus, the emission to the top of the device (corresponding to the top in fig. 1) can be increased. Components for activating pixels of, for example, a display are schematically shown in fig. 1. Fig. 1 shows a gate 112 of a transistor, e.g. a TFT, and schematically other components 114. An electrode 116 for controlling the pixel is provided.
The one or more organic layers 130 form an organic layer stack. A transparent conductive electrode 118 is provided over the organic layer stack. Transparent conductive electrodes 118 may be provided for a plurality of pixels, such as for pixels of a display. As shown in fig. 1 and as further detailed with respect to fig. 2A-2D and 3A-3D, a protective member 120 is provided over the organic layer stack. According to some embodiments, which can be combined with other embodiments described herein, a protective member may be provided below the transparent conductive electrode 118, i.e. between the organic layer stack and the transparent conductive electrode.
According to embodiments of the present disclosure, the protective member may be a protective material, for example a thin layer that may not completely cover the organic layer stack, or the protective member may be a protective layer that completely covers the organic material. The protective material may also be referred to as a sacrificial oxide material or "sacrificial anode". In the following, the protective member may also be referred to as a protective layer, whether or not a complete coverage of the organic layer stack is provided, i.e. whether the protective layer or the protective member is thick enough to completely cover the organic layer stack.
According to some embodiments, which can be combined with other embodiments described herein, the protective layer can be a metal layer free of oxygen. The oxygen-free metal layer may comprise a metal or metal alloy. The oxygen-free metal layer or metal alloy layer may be oxidized in a subsequent process.
For a top-emitting OLED device, a transparent and electrically conductive layer, i.e. the active OLED material, is deposited over the organic layer stack, e.g. as a front contact. For mass production of displays, it is advantageous to deposit the layers for multiple displays on a large area substrate.
In the present disclosure, the "large area substrate" may have an area of 0.15m2Or more, especially 0.3m2Or a larger major surface. In some embodiments, the large area substrate may be a substrate corresponding to about 0.67m2GEN 4.5 of the substrate (0.73x0.92m) corresponds to about 1.4m2GEN 5 of the substrate (1.1m x 1.3.3 m), corresponding to about 4.29m2GEN 7.5 of the substrate (1.95m x 2.2.2 m), corresponding to about 5.7m2GEN 8.5 of the substrate (2.2m x 2.5.5 m), or even corresponding to about 8.7m2GEN 10 of the substrate (2.85m x 3.05.05 m). Even higher generations, such as GEN 11 and GEN 12, and corresponding substrate areas may be similarly implemented. For example, for OLED display manufacturing, half the size of the substrate described above, including GEN 4.5 half cut (half-cut), GEN 6, or GEN 6 half cut, may be coated by evaporation with an apparatus for evaporating materials. The algebraic half-size of the substrate may be due to certain processes being performed on the full substrate size, and subsequentThe process is performed on a previously processed half of the substrate.
Depositing a transparent conductive layer on a large area substrate may use a plasma process, which may cause damage to the OLED layers during coating. The completed OLED device may be damaged due to oxidation and/or energy input during layer growth of the transparent conductive electrode. Embodiments of the present disclosure having an additional protective layer, i.e., a protective member, may reduce or prevent organic material damage.
For example, the transparent conductive electrode may be a transparent conductive oxide. According to some embodiments, which can be combined with other embodiments described herein, the transparent conductive oxide may be selected from the group consisting of indium tin oxide, IZO (In-Zn-O), ZnO: x (where x may be Al, Ga, etc.), SnO: x (where x may be Sb, F, etc.). Indium Tin Oxide (ITO), in particular, may be suitable for providing a transparent conductive electrode, i.e. a transparent anode, for an OLED device for its manufacture.
According to some embodiments, which can be combined with other embodiments described herein, the transparent conductive electrode can be deposited with a PVD process, such as a sputtering process. For example, a magnetron sputtering process may be provided. A sputtering process may be provided on a large area substrate as described herein.
As shown in fig. 2A, a substrate 102 is provided. For example, the substrate may be made of a material selected from the group consisting of: glass (e.g., soda lime glass, borosilicate glass, etc.), metal, polymer, ceramic, composite, carbon fiber material, or any other material or combination of materials that can be coated by a deposition process.
The substrate 102 may be processed to have a plurality of elements 204, such as reflective layers to improve top emission, TFT backplanes, or other structures and layers for operating an OLED device.
In operation 402, as shown in fig. 4, an organic layer stack 130 is provided over a substrate 102 (see fig. 2B). The organic layer stack may include one or more organic layers. One or more of the organic layers includes an active organic material for emitting light. The active organic material emits light due to a voltage supplied between the pixel electrode 116 (see fig. 1) and the transparent conductive electrode 118.
In operation 404, the substrate having the organic layer stack is exposed to a material that creates a protective feature over the organic layer stack. Fig. 2C shows a protective component or layer as protective material 220 (i.e., a material that acts as a "sacrificial anode"). For example, the protective material may be chromium (Cr), chromium alloy, nickel chromium (NiCr), or nickel chromium alloy. According to yet another embodiment, the sacrificial anode material, i.e. the oxygen trapping layer (or "sacrificial layer"), may comprise: zr, Hf, Ti, In, Ag, Al, In, InSn, InZn, Ga, GaZn, Ti, Nb, Mn, alkali metals (Li, Na, K, Cs), alkaline earth metals (Mg, Ca, Sr, Ba), Sc, Y, La and lanthanides (Ce, Nd, Sm, Eu, Dy) and alloys of the above materials, low-stoichiometry oxides from the above materials, and low-stoichiometry fluorides or fluorides. According to some embodiments, the protective material may be deposited to have a material thickness of 5nm or less, in particular 2nm or less.
At operation 406, a transparent conductive electrode 118 is deposited over a protective member, such as protective material 220 shown in fig. 2C and 2D. According to some embodiments, which can be combined with other embodiments described herein, the deposition of the transparent conductive electrode is provided without breaking vacuum after the deposition of the protective member. The substrate is maintained under a vacuum atmosphere between the formation of the protective member and the deposition of the transparent conductive electrode.
In subsequent depositions, the protective material, e.g. nichrome, is oxidized to some extent (fully or partially), i.e. as a "sacrificial anode" that may be partially or fully oxidized during deposition of the TCO. The protective material may prevent or reduce oxidation of the organic material of the organic layer stack during subsequent deposition of the transparent conductive electrode, e.g., the transparent conductive oxide layer.
As shown, for example, in fig. 2C, the protective material may have a protective layer thickness of 2nm or less, e.g., about 1 nm. Thus, the material may not completely cover the organic layer stack. The organic material may still be exposed. 99% or less, for example 80% or less, of the area of the organic material may be covered. For example, due to material selection, the presence of oxygen atoms or oxygen-containing molecules during deposition of the transparent conductive electrode, the transparent conductive oxide layer reacts with the protective material. Oxidation of the organic material may be reduced or prevented.
According to some embodiments, which can be combined with other embodiments described herein, another transparent conductive electrode (not shown in fig. 2A to 2D) can be deposited over the organic layer stack. For example, a transparent conductive electrode, such as a transparent conductive electrode common to a plurality of pixels, may additionally include a thin metal layer. For example, the metal layer may comprise silver. According to additional or alternative modifications, the metal layer may have a thickness of 20nm or less, and for example 10nm or more, such as 15nm to 20 nm. According to some embodiments, which can be combined with other embodiments described herein, a metal layer, such as a silver layer, e.g. a thin silver layer, can be provided over the organic layer stack, a protective material can be provided over the metal layer, and a transparent conductive oxide can be deposited over the protective material. As described herein, a transparent conductive oxide can be a transparent conductive electrode and a metal layer can serve as another transparent conductive electrode.
Fig. 3A-3D depict yet another embodiment of the present disclosure. The substrate 102 may be processed to have a plurality of elements 204 and the organic layer stack 130 is provided over the substrate 102 (see, e.g., operation 402 in fig. 4). Operation 404 produces a protective layer 320 as shown in fig. 3C. According to some embodiments, which may be combined with other embodiments described herein, the protective layer forming the protective component may be a metal alloy. The metal alloy may be oxidized in a subsequent operation or during the operation 406 of depositing the transparent conductive electrode 118 (see fig. 3D).
According to some embodiments, which may be combined with other embodiments described herein, the protective layer comprising, for example, a metal alloy, may have a thickness of about 10nm or more, for example about 10nm to about 20 nm. The protective layer may completely cover the organic layer stack.
According to some embodiments, which may be combined with other embodiments described herein, the metal alloy may include indium, indium alloys, InSn alloys, zinc alloys, ZnAl alloys, InZn, Sn, and alloys of InZn and Sn. According to some embodiments, which can be combined with other embodiments described herein, the metal alloy of the protective layer comprises at least one element or at least one alloy provided for a transparent conductive electrode.
For example, if Indium Tin Oxide (ITO) is used as the transparent conductive oxide for the transparent conductive electrode, an InSn alloy may be provided as the protective layer. If ZnO Al is used as the transparent conductive oxide for the transparent conductive electrode, a ZnAl alloy may be used as the protective layer. Thus, the protective layer may comprise at least one first chemical element and the transparent conductive electrode comprises at least the same first chemical element. Specifically, the metal alloy of the protective layer and the transparent conductive oxide forming the transparent conductive electrode include the same element or elements.
The metal alloys of the protective layers described with respect to fig. 3A-3D may have potentially lower reactivity than the protective materials described herein. Therefore, the protective layer of the metal alloy may have a greater thickness than the protective member including the protective material described with respect to fig. 2A to 2D. A thicker protective layer may compensate for the lower reactivity. Furthermore, the thicker layer may advantageously be protected from the energy input of a subsequent plasma process, such as a sputtering process, in which the transparent conductive electrode is deposited.
According to some embodiments, which can be combined with other embodiments described herein, the metal alloy protective layer can be oxidized after depositing the protective component and before depositing the transparent conductive electrode. Additionally or alternatively, the metal alloy may be oxidized or further oxidized during coating of the transparent conductive electrode, e.g. a transparent conductive oxide.
Fig. 5 depicts a flow diagram of an exemplary method for processing a substrate, in particular for manufacturing an OLED device. In operation 502, a reflective layer is deposited over a substrate. For example, the reflective layer according to embodiments of the present disclosure may be a metal layer or a TCO/metal/TCO stack. For example, the reflective layer may be a reflective electrode. For example, the pixel electrode may act as a reflective layer having a high reflectivity to reflect photons generated by the active organic material to participate in top emission of the OLED device.
One or more organic layers are deposited over a substrate to form an organic layer stack. This is indicated by operation 402. A reflective layer is provided between the substrate and the organic layer stack. Similar to operation 404, which is depicted with respect to fig. 4, a protection component is formed. The protective member may be a protective material or a protective layer. At operation 504, the protection component may be oxidized, particularly partially oxidized or pre-oxidized, in an optional operation. According to some embodiments, the protective component, i.e. the protective material or the protective layer, may be produced during production of the protective component or over the organic layer stack, i.e. after deposition of the protective component, partially oxidized or pre-oxidized. In operation 506, a transparent conductive oxide is sputtered over the organic layer stack with the protective member.
According to some embodiments, which can be combined with other embodiments described herein, another transparent conductive electrode (not shown in fig. 3A to 3D) can be deposited over the organic layer stack. For example, a transparent conductive electrode, such as a transparent conductive electrode common to a plurality of pixels, may additionally include a thin metal layer. For example, the metal layer may comprise silver. According to an additional or alternative modification, the metal layer may have a layer thickness of 20nm or less. According to some embodiments, which can be combined with other embodiments described herein, a metal layer, such as a silver layer, e.g. a thin silver layer, can be provided over the organic layer stack, a protective material can be provided over the metal layer, and a transparent conductive oxide can be deposited over the protective material. As described herein, a transparent conductive oxide can be a transparent conductive electrode and a metal layer can serve as another transparent conductive electrode.
Embodiments of the present disclosure also refer to layer stacks for OLED devices, such as active organic light emitting devices fabricated according to any of the embodiments described herein. For example, exemplary layer stacks are shown in fig. 1, 2D, and 3D. The layer stack comprises a substrate, an organic layer stack having one or more organic material layers, a protective member over the organic layer stack, and a transparent conductive electrode over the protective member. Optionally, a further conductive electrode may be provided between the organic layer stack and the transparent conductive electrode.
In the case where another layer or the like may be optionally provided between the first layer and the second layer, the present disclosure refers to the term "over … …" with respect to the second layer or the like provided over the first layer or the like. Direct contact of the first layer with the second layer is described as the second layer being directly on the first layer.
Embodiments of the present disclosure protect the OLED stack and allow top-emitting OLED device production by using large area PVD equipment, such as example deposition systems utilizing sputtering on large area substrates.
While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (19)
1. A method of fabricating an organic layer stack on a substrate, comprising:
depositing an organic layer stack of one or more organic layers over the substrate;
exposing the substrate of the organic layer stack having the one or more organic layers to a material that produces a protective component over the organic layer stack; and
depositing a transparent conductive electrode over the organic layer stack with the protective member.
2. The method of claim 1, wherein the transparent conductive electrode comprises a transparent conductive oxide.
3. The method of claim 2, wherein the transparent conductive oxide is selected from the group consisting of indium tin oxide, IZO (In-Zn-O), ZnO: x, and SnO: x.
4. The method of claim 3, wherein the transparent conductive oxide is indium tin oxide.
5. Method according to one of claims 1 to 4, wherein the transparent conductive electrode is deposited with a PVD process, in particular sputtered, over the organic layer stack.
6. The method of any of claims 1-5, wherein the protective member is a protective material deposited over the organic layer stack.
7. The method of claim 6, wherein the protective material has a material thickness of 10nm or less, in particular 5nm or less, more in particular 2nm or less.
8. The method of any of claims 6-7, wherein the protective material does not completely cover an area of the organic layer stack.
9. The method of any one of claims 6 to 8, wherein the protective material is selected from the group consisting of: cr, Cr alloys, NiCr, Zr, Hf, Ti, In, Ag, Al, In, InSn, InZn, Ga, GaZn, Ti, Nb, Mn, alkali metals (Li, Na, K, Cs), alkaline earth metals (Mg, Ca, Sr, Ba), Sc, Y, La and lanthanides (Ce, Nd, Sm, Eu, Dy) and alloys of the above materials, low-stoichiometry oxides from the above materials, and low-stoichiometry fluorides or fluorides.
10. The method of claim 9, wherein the protective material is NiCr.
11. The method of any one of claims 1 to 5, wherein the protective component is a protective layer of a metal alloy.
12. The method of claim 11, wherein the protective layer is oxidized after deposition of the protective layer.
13. The method of any one of claims 11-12, wherein the protective layer has a layer thickness of 5nm or greater.
14. The method according to any one of claims 11 to 13, wherein the protective layer comprises at least one first chemical element and wherein the transparent conductive electrode comprises at least the first chemical element, in particular wherein the metal alloy of the protective layer comprises the same element as a transparent conductive oxide forming the transparent conductive electrode.
15. The method of any of claims 1 to 14, further comprising:
a reflective layer is deposited between the substrate and the organic layer stack.
16. The method of any of claims 1 to 15, further comprising:
depositing a further conductive electrode between the organic layer stack and the transparent conductive electrode.
17. A method of fabricating a top-emitting OLED device on a large area substrate, comprising:
depositing a reflective layer over the large area substrate;
depositing an organic layer stack of one or more organic layers over the reflective layer;
exposing the substrate of the organic layer stack having the one or more organic layers to a material that produces a protective component over the organic layer stack; and
sputtering a transparent conductive oxide over the organic layer stack with the protective member.
18. A layer stack for an active organic light emitting device, comprising:
a substrate;
an organic layer stack having one or more organic material layers;
a protective member over the organic layer stack; and
a transparent conductive electrode over the protective member.
19. The layer stack of claim 18, further comprising:
a further conductive electrode between the organic layer stack and the transparent conductive electrode.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2019/060903 WO2020221415A1 (en) | 2019-04-29 | 2019-04-29 | Improved top emission device with active organic film and method of processing a substrate |
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| CN113748530A true CN113748530A (en) | 2021-12-03 |
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