CN100544529C - Organic electroluminescence display device and method of manufacturing same and manufacture method thereof - Google Patents

Organic electroluminescence display device and method of manufacturing same and manufacture method thereof Download PDF

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Publication number
CN100544529C
CN100544529C CNB2005100922880A CN200510092288A CN100544529C CN 100544529 C CN100544529 C CN 100544529C CN B2005100922880 A CNB2005100922880 A CN B2005100922880A CN 200510092288 A CN200510092288 A CN 200510092288A CN 100544529 C CN100544529 C CN 100544529C
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electrode
protective layer
desmachyme
layer
ion beam
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CN1756447A (en
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韩东垣
朴镇宇
权章赫
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Samsung Display Co Ltd
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Samsung Mobile Display Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

Organic electroluminescence display device and method of manufacturing same and manufacture method thereof are provided.This organic electroluminescence display device and method of manufacturing same can be included in first electrode that forms on the substrate.Can form second electrode, make it and first electrode insulation.Can form one or more organic layer between first electrode and second electrode, it comprises at least one luminescent layer.Form a protective layer, to cover second electrode.This protective layer can have the surface roughness (rms) of about 5  to about 50 .The benefit that comprises this organic electroluminescence display device and method of manufacturing same of a protective layer with low surface roughness is to have the characteristic in good useful life.

Description

Organic electroluminescence display device and method of manufacturing same and manufacture method thereof
Background of invention
The application requires to enjoy the korean patent application 10-2004-0042508 that submits to Korea S Department of Intellectual Property on June 10th, 2004 and the priority of the korean patent application 10-2004-0042509 that submits to Korea S Department of Intellectual Property on June 10th, 2004, here its whole disclosure is incorporated herein by reference.
Technical field
The present invention relates generally to panel display apparatus and manufacture method thereof, more specifically, relates to a kind of ORGANIC ELECTROLUMINESCENCE DISPLAYS (OLED) device with protective layer, and it has the ability of good protection against the tide and oxygen infiltration, and relates to the method for making it.
Correlation technique
Flat-panel monitor can be divided into emitter and non-emitter.The example of emitter is planar cathode ray tube (CRT), plasma display, el light emitting device and light-emitting diode.The example of non-emitter is LCD (LCD).In these display unit, el light emitting device is compared conventional CRT monitor and is had wideer visual angle, faster video response speed and lower power consumption.Compare with CRT, other advantages comprise that brightness strengthens, and weight saving improves and the operating temperature range expansion useful life.According to the material difference that forms the OLED emission layer, OLED can be divided into organic or inorganic.Owing to these and other reasons, OLED is considered to replace the display of future generation of CRT monitor.
An OLED device comprises that is clipped in a luminescent layer of being made up of organic compound between anode and the negative electrode.When applying voltage on anode and negative electrode the time, arrive luminescent layer through hole transport layer from the hole migration of anode.Electron transfer from negative electrode arrives luminescent layer through electron transport layer (ETL), produces exciton at luminescent layer electronics and hole-recombination.When these excitons when their excitation state transits to ground state, they make that the fluorescence molecule of luminescent layer is luminous.Form image by optionally the pattern of unit pixel area being switched between Kai Heguan.The full color OLED device has emission three coloured light promptly red (R), the pixel of one of green (G) or blue (B).
In order to ensure long working life, should make negative electrode and moisture shielding on luminescent layer and the luminescent layer, make it not oxidated, and the infiltration of shielding oxygen, make it can not peel off.Set forth the example of a shielding among the korean patent application 2001-0067868, it discloses: utilize vacuum system to form for example high density polyethylene (HDPE) of one deck insulation polymerizable compound on luminescent layer and metal electrode; On this polymerizable compound layer, form one deck inorganic metal; On this inorganic metal layer, form one deck insulation inorganic metal; And on this insulation inorganic metal layer, form one deck insulation polymerizable compound.Yet do not reach gratifying level the useful life of the OLED that this korean patent application 2001-0067868 is instructed, and poor light extraction efficiency (light extractionefficiency) is provided, and therefore needs to improve.
Summary of the invention
The invention provides ORGANIC ELECTROLUMINESCENCE DISPLAYS (OLED) device, it has protective layer, and this protective layer has outstanding resistance to moisture and oxygen infiltration, and the method for making it also is provided.In addition, OLED of the present invention can provide high light extraction efficiency.
One embodiment of the present of invention provide an organic electroluminescence display device and method of manufacturing same, and it has first electrode that forms on substrate.Can form second electrode with first electrode insulation.Can insert one or more organic layer between first and second electrodes, it can comprise a luminescent layer.Can form a protective layer that covers second electrode, wherein this protective layer has about 5
Figure C200510092288D0005105731QIETU
To 50
Figure C200510092288D0005105731QIETU
Surface roughness (rms).
This protective layer can comprise at least a material that is selected from metal oxide and metal nitride.
Another embodiment of the present invention provides a kind of organic electroluminescence display device and method of manufacturing same, and it has first electrode that forms on substrate.Can form second electrode with first electrode insulation.Can insert one or more organic layer between first and second electrodes, it can comprise at least one luminescent layer.Can form a protective layer that covers second electrode, and this protective layer insulating material that desmachyme forms agent forms by containing.
The present invention also provides a kind of method of making organic electroluminescence display device and method of manufacturing same.This method can be included in and form first electrode on the substrate; On first electrode, form one or more organic layer that comprises at least one luminescent layer; Form second electrode, to cover this organic layer; And the formation protective layer, to cover second electrode, wherein this protective layer is to adopt ion beam assisted depositing (IBAD) technology that comprises evaporation source and ion beam source to form.
The present invention also provides a kind of method of making organic electroluminescence display device and method of manufacturing same.This method can be included in and form first electrode on the substrate element; On first electrode, form one or more organic layer with at least one luminescent layer; Form second electrode to cover this organic layer; And form a protective layer to cover this second electrode, wherein this protective layer comprises the insulating material that contains desmachyme formation agent.
Infiltration has outstanding resistance thereby can improve reliability, particularly useful life and brightness aforesaid OLED device of the present invention because described protective layer is to moisture and oxygen, and has improved light extraction efficiency.
Description of drawings
Describe wherein exemplary in detail by the reference accompanying drawing, it is more clear that above and other features and advantages of the present invention will become.
Fig. 1 is the sectional view according to the described organic electroluminescence display device and method of manufacturing same of one embodiment of the invention.
Fig. 2 A schematically illustrates the arranging situation according to the atom of the formation protective layer of one embodiment of the invention; this protective layer provides to organic electroluminescence display device and method of manufacturing same, and the schematically illustrated arranging situation that constitutes the atom of conventional protective layer of Fig. 2 B.
The principle of the schematically illustrated ion beam assisted depositing of the present invention of Fig. 3 (IBAD).
Fig. 4 is the photograph that shows the endurance life characteristic of the device that has protective layer among the present invention.
Detailed Description Of The Invention
The active matrix OLED (OLED) of making according to principle of the present invention installs The redness that can comprise repetition, green and blue pixel. Each colored pixels can be set to have different Mosaic, dot matrix pattern and similar pattern. Can in the viewing area of organic electroluminescence display device and method of manufacturing same So that the image of a large amount of pixels to realize being scheduled to be set. Each pixel of this viewing area can comprise a choosing The drive circuit of selecting property, it has two kinds of thin film transistor (TFT)s (TFT), i.e. switching TFT and drive TFT. Each pixel can also comprise electric capacity and organic electroluminescence device. This optionally drive circuit TFT and The quantity of electric capacity is unrestricted, can become according to the design conditions of required device.
Fig. 1 is the sectional view according to an embodiment of the active matrix OLED device 10 of principle manufacturing of the present invention.With reference to Fig. 1, this active matrix OLED device 10 comprises substrate 81.This substrate 81 can for example glass or plastics be formed by transparent material.Can on the whole surface of substrate 81, form a resilient coating 82.
On this resilient coating 82, can form the active layer 44 that is provided with predetermined pattern.This active layer 44 can be embedded in the gate insulation layer 83.This active layer 44 can mix and constitute p type or n N-type semiconductor N.
On this gate insulation layer 83, can form the grid 42 of TFT40 corresponding to the zone of this active layer 44.This grid 42 can be embedded in the intermediate insulating layer 84.After forming this intermediate insulating layer 84, can pass through for example this gate insulation layer 83 and this intermediate insulating layer 84 of dry etching etching of etch process, to form contact hole 83a, 84a comes out the source region of this active layer 44 and the part in drain region thus.
By contact hole 83a, 84a is connected to this source region with source electrode 41, by contact hole 83a and 84a drain electrode is connected to this drain region.This source electrode 41 and this drain electrode 43 can be embedded in the protective layer 85.After forming this protective layer 85, come out by will a drain part of 43 of etch process.
This protective layer 85 is made up of insulator, and can be for example silica or silicon nitride of inorganic layer, perhaps for example acryloyl group or BCB of organic layer.On this protective layer 85, can further form an independent insulating barrier that makes these protective layer 85 planarizations.
Organnic electroluminescent device 60 sends ruddiness (R) according to the electric current that is applied, green glow (G) or blue light (B).When the light that sends combines with the light that sends, just can show predetermined image from this Organnic electroluminescent device from Organnic electroluminescent device 60.This Organnic electroluminescent device 60 can comprise the drain electrode 43 that is connected to drive TFT 40, as first electrode 61 of pixel electrode.It can also be included as cover fully whole pixel provide, as second electrode 62 of counterelectrode, and insert organic luminous layer 63 between first electrode 61 and second electrode 62.
First electrode 61 and second electrode 62 can be insulated from each other.For luminous, each electrode can apply the voltage of opposed polarity on this organic luminous layer 63.
Organic luminous layer 63 can be made of low-molecular-weight or high molecular weight material.When using the low-molecular-weight organic material, can be with hole injection layer (HIL), hole transport layer (HTL), luminescent layer (EML), electron transport layer (ETL), electron injecting layer (EIL) or the like is deposited as individual layer or sandwich construction.The example of adoptable organic material comprises copper phthalocyanine (CuPc), N, N '-two (naphthalene-1-yl)-N, N '-diphenyl-benzidine (NPB), three-oxine aluminium (Alq3) or the like.These low-molecular-weight organic material layers can form by vacuum evaporation technique.
When using high molecular weight material, luminescent layer 63 can comprise HTL and EML.Can use PEDOT as HTL.High molecular weight organic materials is for example poly--and phenylene vinylidene (PPV) compounds and polyfluorene compound can be used as EML.Can form the one deck or the multilayer of these materials with silk screen printing and ink jet printing.
It is described that organic luminous layer is not limited to top embodiment, can use different execution modes.First electrode 61 and second electrode 62 can constitute anode and negative electrode respectively, and can be with their function counter-rotating.First electrode, 61 patternings can be made it the zone corresponding to each pixel, can make second electrode 62 of formation cover whole pixel fully.
First electrode 61 can be fabricated to transparency electrode or reflecting electrode.When first electrode 61 was transparency electrode, it can be by ITO, IZO, ZnO, perhaps In 2O 3Constitute.When first electrode 61 during as reflecting electrode, it can be by at first forming by Ag, Mg, and Al, Pt, Pd, Au, Ni, Nd, Ir, the reflector that Cr or its combination are constituted forms then by ITO IZO, ZnO, perhaps In thereon 2O 3The transparent electrode layer that is constituted and forming.Simultaneously, also second electrode 62 can be fabricated to transparency electrode or reflecting electrode.When second electrode was used as transparency electrode, because it is a negative electrode, therefore can deposit the metal with low work function on organic luminous layer 63 also was Li, Ca, LiF/Ca, LiF/Al, Al, Ag, Mg or their combination.IZO, ZnO, perhaps In can be formed on this low workfunction metal by ITO 2O 3Auxiliary electrode layer or the bus electrode line formed.When second electrode 62 was reflecting electrode, it can be by depositing Li on the whole surface of organic luminous layer 63, Ca, LiF/Ca, LiF/Al, Al, Ag, Mg or their combination and form.
Can on second electrode 62, form protective layer 65.The surface roughness of protective layer 65 (rms) can be about 5
Figure C200510092288D0005105731QIETU
To about 50
Figure C200510092288D0005105731QIETU
In the scope.This low surface roughness is caused by the high density of the atom that constitutes protective layer 65.When the surface roughness of protective layer 65 than about 50
Figure C200510092288D0005105731QIETU
When wanting big, protective layer may be not can formed, thereby moisture and oxygen infiltration may be not can avoided effectively with tight structure.
Fig. 2 A is illustrated in the exemplary arrangement that constitutes the atom of protective layer 65 in the one embodiment of the invention.Fig. 2 B is illustrated in the typical arrangement of the atom in the conventional protective layer.
With reference to Fig. 1, Fig. 2 A and Fig. 2 B, above-mentioned atom with formation protective layer 65 of low surface roughness is tending towards tight arrangement.On the contrary, the atom that constitutes GPF (General Protection False layer 65B (Fig. 2 B) often comprises hole C and defective D, and they all are the fractures of atomic arrangement.Shown in Fig. 2 A, this hole and defective can not occur in the compact arranged protective layer 65 of the present invention basically.Because the surfaces A of having avoided oxygen and/or moisture to pass protective layer 65 is permeated into and is contacted with second electrode 62, thereby protective layer 65 has improved the useful life of OLED device 10.When the surface roughness of protective layer 65 greater than about 50
Figure C200510092288D0005105731QIETU
The time, among the present invention closely atomic structure can not realize, thereby may not prevent the infiltration of oxygen and/or moisture.
Protective layer 65 can comprise at least a material in metal oxide or the metal nitride.The example of metal oxide and metal nitride comprises SiO x, SiN x, (x 〉=1), MgO, TiO, TaO and CeO, but be not limited thereto.
Protective layer 65 can thick about 300
Figure C200510092288D0005105731QIETU
To about 3000
Figure C200510092288D0005105731QIETU
The thickness of protective layer 65 can be determined the opposing level of moisture and oxygen infiltration according to the protective layer of wanting.The thickness of protective layer 65 also can change according to production cost and process time.
Protective layer 65 can comprise insulating material, and this insulating material comprises desmachyme and forms agent material (for convenient not shown).
" desmachyme formation agent " is a kind of material, and its network by the other disconnection of the atom of bonding formation basis material has improved network between atom.This basis material can be a kind of insulating material, and it forms protective layer 65 and comprise desmachyme and forms agent.Thereby the protective layer 65 among the present invention does not have really interatomic hole C and the defective D as the fracture of atomic arrangement,, these illustrate to illustrative in Fig. 2 B.As a result, can avoid oxygen and moisture to pass the surfaces A of protective layer 65 towards 62 infiltrations of second electrode.
Protective layer 65 comprises insulating material that desmachyme forms agent and can have about 2.0 or bigger refractive index among the present invention.Have when being lower than 2.0 refractive index when comprising insulating material that this desmachyme forms agent, because the total reflection of the light that sends from organic layer etc., light extraction efficiency may reduce.
The insulating material that comprises desmachyme formation agent of protective layer 65 can have the optical band gap of about 3.0eV to about 6.0eV among the present invention.When the insulating material that comprises this desmachyme formation agent had the optical band gap that is lower than about 3.0eV, the purpose that aforesaid use desmachyme forms agent may not can realize, because there is not enough desmachyme to form agent.When comprising the about 6.0eV of optical band gap that insulating material that this desmachyme forms agent has, it is opaque that protective layer may become, and this has also reduced light extraction efficiency.
Constitute this desmachyme formation agent of protective layer 65 among the present invention and the insulating material of its inclosure and preferably satisfy top refractive index and optical band gap requirement, to improve light extraction efficiency.The example that desmachyme forms agent comprises Li, Na, and K, Ca, Sn, Rb, Cs, Ba, Pb, Be, Mg, Ce and Nb, but be not limited thereto.In these elements, preferred Sn.The example of insulating material comprises metal oxide and metal nitride, more specifically, SiO is arranged x, SiN x(x 〉=1), MgO, TiO, TaO, CeO or the like, but be not limited thereto.In these materials, preferred silica.
The example that constitutes the insulating material that comprises desmachyme formation agent of protective layer 65 among the present invention comprises metal oxide and the nitride that contains aforesaid desmachyme formation agent; more specifically; SiLiO; SiNaO, SiKO, SiCaO; SiSnO; SiRbO, SiCsO and SiBaO, but be not limited thereto.Preferred SiSnO in these materials.
As shown in Figure 3, protective layer 65 can adopt ion beam assisted depositing (IBAD) technology with evaporation source and ion beam source to form.
Fig. 3 illustrates the situation how an exemplary IBAD technology can operate.Evaporation source 97 emissions will deposit to the particle 92 on the surface of substrate 91.Ion beam source 95 emitting ions 93 are with the surface mobility that increases particle 92 and make particle 92 be deposited on densely on the substrate 91.
The particle 92 that emits from evaporation source 97 can comprise the material that forms protective layer 65.The example of suitable particle comprises metal oxide and metal nitride, more specifically is SiO x, SiN x(x 〉=1), MgO, TiO, TaO and CeO, but be not limited thereto.
Particle 92 can also comprise that desmachyme forms agent and its basis material.Can comprise for example Li of these materials from the particle of evaporation source 97 emissions, Na, K, Ca, Sn, Rb, Cs, Ba, Pb, Be, Mg, at least a atom among Ce and the Nb, and at least a material in metal oxide and the nitride, but be not limited thereto.The example of metal oxide and nitride comprises SiO x, SiN x(x 〉=1), MgO, TiO, TaO, CeO etc., but be not limited thereto.In these elements and material, preferred Sn and silica.
Evaporation source 97 can comprise one or more sedimentary origin.Sedimentary origin can provide similar or inhomogeneous deposition and atomic.For example, the main sedimentary origin of being located in the evaporation source 97 can comprise two secondary sedimentary origins of preparation separately.A secondary sedimentary origin can provide desmachyme to form agent.Another can provide insulating material.If necessary, can use two or more secondary sedimentary origins that comprise different desmachymes formation agent.By using desmachyme to form the sedimentary origin of agent and the sedimentary origin of insulating material simultaneously, can deposit netted texturizer and insulating material simultaneously, form independent protective layer 65.Be controlled in the predetermined scope by being applied to the energy source power that desmachyme forms on agent sedimentary origin and the insulating material sedimentary origin, can adjust the content ratio that desmachyme in this individual layer forms agent and insulating material.
In one embodiment, desmachyme forms agent-insulating material sedimentary origin and can be made of the unification compound, and it makes by using mechanical alloying method processing desmachyme formation agent powder and insulating material powder.Can adjust the content ratio that desmachyme forms agent and insulating material by the mixing ratio of when preparation desmachyme forms agent-insulating material sedimentary origin, controlling these powder.
The example that constitutes the desmachyme formation agent-insulating material of protective layer 65 can comprise SiLiO, SiNaO, SiKO, SiCaO, SiSnO, SiRbO, SiCsO and SiBaO.Preferred SiSnO in these materials.
The ion of launching from the ion beam source 95 of IBAD 93 should be not and the material of for example aforesaid formation second electrode 62 of material of the substrate that constitutes its formation protective layer and any particle reaction that sends from evaporation source.The example of this ion comprises the ion of inert gas.More specifically, can use Ar+, Kr+ or Xe+ ion.
The energy of ion beam source 95 can be preferably about 80eV to 150eV at about 50eV in about 200eV scope.If the energy of ion beam source 95 is lower than about 50eV, the energy of ions of sending from this ion beam source is too low and can not increase the surface mobility of the particle that sends from evaporation source so, thereby can not form and have high rigidity and highdensity tight protective layer.If the energy of ion beam source is greater than about 200eV, the energy of ions of sending from ion beam source may be too high so, so that the ion that sends from ion beam source 95 may corrode formed protective layer.Thereby 150eV preferably approximately.
When adopting the IBAD technology to form protective layer, from the population of evaporation source 97 emissions with respect to the ratio from the number of ions of ion beam source 95 emissions can be 1:1 to 0.9:1, preferred 0.9:1.If on this scope, then the ion from the ion beam source emission may corrode formed protective layer from the number of ions of ion beam source emission.If under this scope, then this number of ions may be too low and can not increase from the surface mobility of the particle of evaporation source emission from the number of ions of ion beam source emission, thereby may not can form and have high rigidity and highdensity tight protective layer.
Above ratio can be by adjusting ion beam source 95 electron flux or the be used for influx that produces the gas of ion control.For example; when using evaporation source 97 emission silicon oxide particles and using ion beam source 95 emission argon ions to form the protective layer that constitutes by silica 65; by the ionic flux of adjusting ion beam source 95 is that 50mA and the influx of adjusting argon gas are 5sccm, the population of silica can be controlled at 1:1 with respect to the ratio of argon ion number.Perhaps; when using evaporation source emission silicon oxide particle and Sn particle and use ion beam source emission argon ion to form the protective layer that constitutes by SiSnO; by the electron flux of adjusting ion beam source is that 50mA and the influx of adjusting argon gas are 5sccm, the quantity of silicon oxide particle and Sn particle and the ratio of argon ion quantity can be controlled at 1:1.
When using IBAD to form protective layer, can use thermal evaporation sources or electron beam evaporation source as the evaporator main source.The example of ion beam source comprises Kaufmann type ion gun, Endhall type ion gun, rf type ion gun or the like.Those of ordinary skills can easily select these sources according to purpose of the present invention.
Although describe as an example with the active matrix organic electroluminescence display unit according to described organic electroluminescence display device and method of manufacturing same of the embodiment of the invention and manufacture method thereof, the invention is not restricted to this.
Now with reference to following Example the present invention is described in more detail.
Embodiment 1
Deposition of thick successively on glass substrate
Figure C200510092288D00111
ITO, PEDOT, thick
Figure C200510092288D00112
PPV, thick
Figure C200510092288D00113
LiF and thick
Figure C200510092288D00114
Al, this substrate is as substrate that will silicon oxide layer deposited.Afterwards, prepare the silicon oxide powder of 1g as the silica sedimentary origin.Then, prepare a container of rotating shaft that comprises silica sedimentary origin, ion beam source, thermal evaporation sources, substrate holder, is used for the rotary plate support.As the silica sedimentary origin, as ion beam source, use Helisys (obtaining) with the silicon oxide powder that makes as mentioned above as thermal evaporation sources from ANS with EndHall type ion gun (obtaining) from Infrvion.Substrate is installed on the substrate holder, and the location substrate holder makes it in the face of the silica sedimentary origin.According to the described container of the listed conditional operation of table 1, thick then on substrate, to form
Figure C200510092288D00115
Silicon oxide layer.
Table 1
Figure C200510092288D00121
Prepared device with silicon oxide layer is called " sample 1 ".
Comparative example 1
Form silicon oxide layer in the mode identical, except the condition of work and ion beam source that do not adopt container described in the example 1 with example 1.Claim this device to be " sample A "
Assessment example 1: for the assessment of the configuration of surface of silicon oxide layer
Photograph to determine the surface roughness of the silicon oxide layer of sample 1 and sample A by SEM.As a result, the surface roughness of the silicon oxide layer of sample 1 (rns) is
Figure C200510092288D00122
And the surface roughness of the silicon oxide layer of sample A (rms) is
Figure C200510092288D00123
From this result obviously as can be known, has good surface roughness according to the silicon oxide layer of sample 1 of the present invention than the silicon oxide layer of sample A.
Embodiment 2
Deposition of thick successively on glass substrate ITO, PEDOT, thick PPV, thick LiF and thick
Figure C200510092288D00127
Mg:Ag, this substrate is as depositing the substrate of SiSnO layer.Afterwards, the silicon oxide powder of preparing 1g is as the silica sedimentary origin, and the Sn powder of 1g is as the Sn sedimentary origin.Then, prepare a container, it comprises ion beam source, this silica sedimentary origin, this Sn sedimentary origin, can handle thermal evaporation sources, the substrate holder of this silica sedimentary origin and this Sn sedimentary origin respectively, be used for the rotating shaft of rotary plate support.Those that have made with recited above as ion beam source, use Helisys (obtaining from ANS) as thermal evaporation sources with EndHall type ion gun (obtaining from Infrvion) as this silica sedimentary origin and this Sn sedimentary origin.Substrate is installed on the substrate holder, locatees this substrate holder and make it in the face of silica sedimentary origin and Sn sedimentary origin.According to the described container of the listed conditional operation of top table 1, thick then on substrate, to form
Figure C200510092288D00131
The SiSnO layer.This device with SiSnO layer is called " sample 2 ".
Assessment example 2: to the assessment of the configuration of surface of SiSnO layer
Photograph to determine the surface roughness of the SiSnO layer of sample 2 by SEM.As a result, the surface roughness (rms) of the SiSnO layer of sample 2 is
Figure C200510092288D00132
Assessment example 3: to the assessment of endurance life characteristic
Sample 2 is exposed in the air, operates with the preset time section then, to assess its endurance life characteristic.The results are shown among Fig. 4, therefrom as can be seen, reach 1028 hours, still can guarantee the useful life of the length of sample 2 although the size of dim spot is constantly grown.
Protective layer of the present invention has the atomic structure closely of low surface roughness.This protective layer can comprise and contain the insulating material that desmachyme forms agent, the optical band gap that it has high refractive index and suitable transparency can be provided for Organnic electroluminescent device.Thereby it has than the moisture resistance gas/oxygen in the flat-panel monitor of routine and has good moisture resistance gas and oxygen permeability and light extraction efficiency.This protective layer can utilize the ion beam assisted depositing method to form.The formation of protective layer and use can improve the OLED display among the present invention fail safe and useful life.
Carried out illustrating particularly and describing with reference to exemplary embodiment wherein though the present invention is special, but one of ordinary skill in the art will appreciate that, can carry out various forms of and variation details, as long as its spirit and scope of the invention that do not break away from following claim and limited.

Claims (13)

1. organic electroluminescence display device and method of manufacturing same comprises:
Be provided at first electrode on the substrate;
Form second electrode with first electrode insulation;
Between first and second electrodes and comprise one or more organic layer of at least one luminescent layer; With
Cover the protective layer that second electrode forms,
Wherein this protective layer has 5
Figure C200510092288C0002110422QIETU
To 50
Figure C200510092288C0002110422QIETU
Surface roughness;
Wherein form by insulating material that desmachyme forms agent by containing for this protective layer, and it is a kind of material that described desmachyme forms agent, and its network of other disconnection that constitutes the atom of basis material by bonding has improved network between atom;
It is at least a following atom: Li, Na, K, Ca, Sn, Rb, Cs, Ba, Pb, Be, Mg, Ce and the Nb of being selected from that wherein said desmachyme forms agent; And
The wherein said insulating material that contains desmachyme formation agent is the material of at least a SiLiO of being selected from, SiNaO, SiKO, SiCaO, SiSnO, SiRbO, SiCsO and SiBaO.
2. organic electroluminescence display device and method of manufacturing same as claimed in claim 1, wherein this protective layer is to adopt the ion beam assisted depositing method to form, this ion beam assisted depositing method has been used evaporation source and ion beam source.
3. organic electroluminescence display device and method of manufacturing same as claimed in claim 1 wherein contains this insulating material that this desmachyme forms agent and has 2.0 or higher refractive index.
4. organic electroluminescence display device and method of manufacturing same as claimed in claim 1, this insulating material that wherein contains this desmachyme formation agent has the optical band gap of 3.0eV to 6.0eV.
5. the method for preparing organic electroluminescence display device and method of manufacturing same, this method comprises:
On substrate, form first electrode;
On first electrode, form one or more organic layer that comprises at least one luminescent layer;
Form second electrode, to cover this organic layer; And
Form protective layer, covering second electrode,
Wherein this protective layer is to adopt the ion beam assisted depositing method to form, and this ion beam assisted depositing method has adopted evaporation source and ion beam source,
Wherein form by insulating material that desmachyme forms agent by containing for this protective layer, and it is a kind of material that described desmachyme forms agent, and its network of other disconnection that constitutes the atom of basis material by bonding has improved network between atom;
It is at least a following atom: Li, Na, K, Ca, Sn, Rb, Cs, Ba, Pb, Be, Mg, Ce and the Nb of being selected from that wherein said desmachyme forms agent; And
The wherein said insulating material that contains desmachyme formation agent is the material of at least a SiLiO of being selected from, SiNaO, SiKO, SiCaO, SiSnO, SiRbO, SiCsO and SiBaO.
6. method as claimed in claim 5, wherein the particle from this evaporation source emission comprises at least a material that is selected from metal oxide and metal nitride.
7. method as claimed in claim 6, wherein the particle from this evaporation source emission comprises SiOx, SiNx, MgO, TiO, TaO or CeO, wherein x 〉=1.
8. method as claimed in claim 5, wherein the ion from this ion beam source emission is the ion that is selected from least a atom of inert gas.
9. method as claimed in claim 5, wherein the energy of this ion beam source is in the scope of 50-200eV.
10. method as claimed in claim 5, wherein the ratio from this ion beam source amount of ions of launching and the number of particles of launching from this evaporation source is that 1:1 is to 0.9:1.
11. method as claimed in claim 5, wherein the surface roughness of this protective layer is 5
Figure C200510092288C0002110422QIETU
To 50
Figure C200510092288C0002110422QIETU
Scope in.
12. method as claimed in claim 5 wherein contains this insulating material that this desmachyme forms agent and has 2.0 or bigger refractive index.
13. method as claimed in claim 5, this insulating material that wherein contains this desmachyme formation agent has the optical band gap of 3.0eV to 6.0eV.
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