CN113748520A - Igbt器件 - Google Patents

Igbt器件 Download PDF

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Publication number
CN113748520A
CN113748520A CN201980091300.6A CN201980091300A CN113748520A CN 113748520 A CN113748520 A CN 113748520A CN 201980091300 A CN201980091300 A CN 201980091300A CN 113748520 A CN113748520 A CN 113748520A
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China
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type
region
gate
igbt device
grid
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CN201980091300.6A
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CN113748520B (zh
Inventor
龚轶
王睿
刘伟
袁愿林
王鑫
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Suzhou Dongwei Semiconductor Co ltd
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Suzhou Dongwei Semiconductor Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

本申请提供的一种IGBT器件，包括位于n型漂移区(21)顶部的p型体区(22)，位于所述p型体区(22)内的第一n型发射极区(23)；位于所述p型体区(22)之上的第一栅极结构，所述第一栅极结构包括第一栅介质层(24)以及位于所述第一栅介质层(24)之上的第一栅极(26)和n型浮栅(25)，且在横向上，所述n型浮栅(25)位于靠近所述n型漂移区(21)的一侧，所述第一栅极(26)位于靠近所述第一n型发射极区(23)的一侧并延伸至所述n型浮栅(25)之上，介于所述n型浮栅(25)和所述第一栅极(26)之间的绝缘介质层(27)；位于所述第一栅介质层(24)中的一个开口(28)，所述n型浮栅(25)通过所述开口(28)与所述p型体区(22)接触形成p‑n结二极管。

Description

PCT国内申请，说明书已公开。

Claims (7)

  1. PCT国内申请，权利要求书已公开。
CN201980091300.6A 2019-11-27 2019-11-27 Igbt器件 Active CN113748520B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/121349 WO2021102756A1 (zh) 2019-11-27 2019-11-27 Igbt器件

Publications (2)

Publication Number Publication Date
CN113748520A true CN113748520A (zh) 2021-12-03
CN113748520B CN113748520B (zh) 2022-05-31

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ID=76129833

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CN201980091300.6A Active CN113748520B (zh) 2019-11-27 2019-11-27 Igbt器件

Country Status (3)

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US (1) US11990538B2 (zh)
CN (1) CN113748520B (zh)
WO (1) WO2021102756A1 (zh)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020179968A1 (en) * 2001-05-30 2002-12-05 Frank Pfirsch Power semiconductor component, compensation component, power transistor, and method for producing power semiconductor components
JP2006344779A (ja) * 2005-06-09 2006-12-21 Toyota Motor Corp 半導体装置および半導体装置の制御方法
US20090026532A1 (en) * 2007-07-27 2009-01-29 Infineon Technologies Austria Ag Short circuit limiting in power semiconductor devices
US20130234201A1 (en) * 2012-03-12 2013-09-12 Shanghai Hua Hong Nec Electronics Co., Ltd. Field stop structure, reverse conducting igbt semiconductor device and methods for manufacturing the same
US9136381B1 (en) * 2014-11-18 2015-09-15 Texas Instruments Incorporated Super junction MOSFET with integrated channel diode
CN105355656A (zh) * 2015-11-23 2016-02-24 江苏物联网研究发展中心 能降低米勒电容的超结igbt器件

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5366521U (zh) 1976-11-08 1978-06-05
JP5366521B2 (ja) 2008-12-05 2013-12-11 三菱電機株式会社 炭化珪素半導体装置及びその製造方法
US8299494B2 (en) * 2009-06-12 2012-10-30 Alpha & Omega Semiconductor, Inc. Nanotube semiconductor devices
CN103247626A (zh) * 2013-05-02 2013-08-14 复旦大学 一种半浮栅器件及其制造方法
US10388650B2 (en) * 2014-08-17 2019-08-20 Fudan University Semi-floating-gate power device and manufacturing method therefor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020179968A1 (en) * 2001-05-30 2002-12-05 Frank Pfirsch Power semiconductor component, compensation component, power transistor, and method for producing power semiconductor components
JP2006344779A (ja) * 2005-06-09 2006-12-21 Toyota Motor Corp 半導体装置および半導体装置の制御方法
US20090026532A1 (en) * 2007-07-27 2009-01-29 Infineon Technologies Austria Ag Short circuit limiting in power semiconductor devices
US20130234201A1 (en) * 2012-03-12 2013-09-12 Shanghai Hua Hong Nec Electronics Co., Ltd. Field stop structure, reverse conducting igbt semiconductor device and methods for manufacturing the same
US9136381B1 (en) * 2014-11-18 2015-09-15 Texas Instruments Incorporated Super junction MOSFET with integrated channel diode
CN105355656A (zh) * 2015-11-23 2016-02-24 江苏物联网研究发展中心 能降低米勒电容的超结igbt器件

Also Published As

Publication number Publication date
WO2021102756A1 (zh) 2021-06-03
CN113748520B (zh) 2022-05-31
US20220285536A1 (en) 2022-09-08
US11990538B2 (en) 2024-05-21

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