CN113741673A - Protection device applied to hot plug server - Google Patents

Protection device applied to hot plug server Download PDF

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Publication number
CN113741673A
CN113741673A CN202110997801.XA CN202110997801A CN113741673A CN 113741673 A CN113741673 A CN 113741673A CN 202110997801 A CN202110997801 A CN 202110997801A CN 113741673 A CN113741673 A CN 113741673A
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current
mosfet
hot
input
chip
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CN113741673B (en
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陈宥任
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Suzhou Inspur Intelligent Technology Co Ltd
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Suzhou Inspur Intelligent Technology Co Ltd
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/28—Supervision thereof, e.g. detecting power-supply failure by out of limits supervision
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/561—Voltage to current converters
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/30—Means for acting in the event of power-supply failure or interruption, e.g. power-supply fluctuations
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/30—Monitoring
    • G06F11/3058—Monitoring arrangements for monitoring environmental properties or parameters of the computing system or of the computing system component, e.g. monitoring of power, currents, temperature, humidity, position, vibrations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Quality & Reliability (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

The application discloses a protection device applied to a hot plug server, which comprises an IC chip, wherein a current detection module and an input current control module are arranged on the IC chip; the current detection module is used for monitoring the target current change rate of the MOSFET in the hot plug server; and the input current control module is used for controlling the input current of the IC chip according to the target current change rate and the SOA curve graph of the MOSFET so as to enable the MOSFET to work in a safe region when the operating current of the MOSFET is larger than the preset current. Obviously, compared with the prior art, the method can avoid the influence of the IC chip on the turn-off time of the MOSFET when the MOSFET encounters large current, so that the safety and the reliability of the MOSFET in the operation process can be further improved. Correspondingly, the hot plug server provided by the application also has the beneficial effects.

Description

Protection device applied to hot plug server
Technical Field
The invention relates to the technical field of servers, in particular to a protection device applied to a hot plug server and the hot plug server.
Background
In a server with a hot plug function, a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is usually selected as a conducting switch of a hot plug device. When the MOSFET encounters a large current, an IC Chip (microelectronic device) inside the server turns off the MOSFET, thereby achieving the purpose of protecting the MOSFET. However, this protection method is easily affected by the turn-off time of the MOSFET, and if the MOSFET is not turned off in time by the IC chip, the MOSFET will be burned out. At present, no effective solution exists for the technical problem.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a protection device applied to a hot-plug server and a hot-plug server, so as to further improve the safety and reliability of the MOSFET during the use process. The specific scheme is as follows:
a protection device applied to a hot plug server comprises an IC chip, wherein a current detection module and an input current control module are arranged on the IC chip;
the current detection module is used for monitoring the target current change rate of the MOSFET in the hot-plug server;
and the input current control module is used for controlling the input current of the IC chip according to the target current change rate and the SOA curve graph of the MOSFET so as to enable the MOSFET to work in a safe area when the operating current of the MOSFET is larger than the preset current.
Preferably, the method further comprises the following steps:
and the memory is connected with the input current control module and used for storing the SOA curve graph.
Preferably, the current detection module includes:
the current detection unit is used for monitoring the running state of the MOSFET in the hot plug server to obtain target running information;
a logic calculation unit for determining the target rate of change of the current of the MOSFET according to the target operation information.
Preferably, the IC chip includes: a precision resistor, a current monitor, a current controller and a gate switch controller;
wherein, the first end of the precision resistor is respectively connected with Vin, the first end of a first capacitor in the hot-plug server and the first input end of the current monitor, the second end of the first capacitor is grounded, the second end of the precision resistor is respectively connected with the drain electrode of the MOSFET and the second input end of the current monitor, the output end of the current monitor is connected with the input end of the current controller, the output end of the current controller is connected with the input end of a gate switch controller, the output end of the gate switch controller is respectively connected with the grid electrode of the MOSFET and the first end of a first resistor in the hot-plug server, the second end of the first resistor is connected with the first end of a second capacitor in the hot-plug server, the second end of the second capacitor is grounded, and the source electrode of the MOSFET is connected with the first end of a third capacitor in the hot-plug server, the second end of the third capacitor is grounded;
correspondingly, the source electrode of the MOSFET is the output end of the hot-plug server.
Preferably, the input current control module includes: the circuit comprises a first AND gate, a comparator and a switch control unit with a plurality of current output channels;
the output end of the comparator is connected with the output end of the current monitor, the first input end of the comparator is connected with the first input end of the first AND gate, the second input end of the comparator is connected with the first input end of the current controller, the second input end of the current controller is connected with the trigger end of the first AND gate, the second input end of the first AND gate is connected with Vin, the output end of the first AND gate is connected with the input end of the switch control unit, and the output end of the switch control unit is connected with the first end of the precision resistor;
correspondingly, the output signal of the current detection module is the reference signal of the comparator.
Preferably, the current output values of the current output channels are reduced step by step according to a preset rule; and the maximum current output value of the current output channels is less than or equal to a target current value, wherein the target current value is a limit current value which can enable the MOSFET to safely operate according to the SOA curve graph and the target current change rate.
Correspondingly, the invention also discloses a hot plug server, which comprises the protection device applied to the hot plug server.
Therefore, in the protection device provided by the invention, the current detection module and the input current control module are arranged on the IC chip, and the current detection module can detect the target current change rate of the MOSFET in the hot plug server, so that when the running current of the MOSFET is greater than the preset current, the input current control module can control the input current of the IC chip according to the target current change rate of the MOSFET and the SOA curve of the MOSFET, and the MOSFET works in a safe region. Obviously, compared with the prior art, the method can avoid the influence of the IC chip on the turn-off time of the MOSFET when the MOSFET encounters large current, so that the safety and the reliability of the MOSFET in the operation process can be further improved. Correspondingly, the hot-plug server provided by the invention also has the beneficial effects.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a structural diagram of a protection device applied to a hot-plug server according to an embodiment of the present invention;
fig. 2 is a structural diagram of a hot-plug server according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the operating parameters of a MOSFET when subjected to a high current surge;
FIG. 4 is a SOA graph of MOSFETs in the hot-swap server of FIG. 2;
fig. 5 is a structural diagram of another protection device applied to a hot-plug server according to an embodiment of the present invention;
fig. 6 is a graph of the SOA of the MOSFET in the protection device shown in fig. 5.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a structural diagram of a protection device applied to a hot-plug server according to an embodiment of the present invention, where the protection device includes an IC chip, and a current detection module 11 and an input current control module 12 are disposed on the IC chip;
the current detection module 11 is configured to monitor a target current change rate of an MOSFET in the hot-plug server;
and the input current control module 12 is configured to control the input current of the IC chip according to the target current change rate and the SOA curve graph of the MOSFET when the operating current of the MOSFET is greater than the preset current, so that the MOSFET operates in a safe region.
In this embodiment, a protection device applied to a hot-plug server is provided, by which the safety and reliability of the MOSFET during operation can be further improved. In this protection device, a current detection module 11 and an input current control module 12 are provided on an IC chip of a hot-swap server.
The current detection module 11 on the IC chip is configured to monitor a target current change rate of the MOSFET in the hot-swap server, and when the detection module monitors the target current change rate of the MOSFET in the hot-swap server, the target current change rate of the MOSFET is fed back to the input current control module 12 of the IC chip. If the input current control module 12 detects that the operating current of the MOSFET is greater than the preset current, at this time, the input current control module 12 controls the input current of the IC chip according to the target current change rate of the MOSFET and the SOA curve diagram of the MOSFET, so that the MOSFET operates in a safe region.
It can be understood that, because the input current control module 12 can control the input current of the IC chip according to the target current change rate of the MOSFET and the SOA graph of the MOSFET by using this method, in this case, the output current of the IC chip and the current input to the MOSFET are forcibly changed, so that the impact force when the MOSFET is subjected to a large current can be relatively reduced, and the safe operation of the MOSFET can be ensured.
It can be seen that, in the protection device provided in this embodiment, the current detection module and the input current control module are disposed on the IC chip, because the current detection module can detect the target current change rate of the MOSFET in the hot-plug server, when the operating current of the MOSFET is greater than the preset current, the input current control module can control the input current of the IC chip according to the target current change rate of the MOSFET and the SOA curve of the MOSFET, and make the MOSFET operate in the safe region. Obviously, compared with the prior art, the method can avoid the influence of the IC chip on the turn-off time of the MOSFET when the MOSFET encounters large current, so that the safety and the reliability of the MOSFET in the operation process can be further improved.
Based on the above embodiment, this embodiment further describes and optimizes the technical solution, and as a preferred implementation, the protection device further includes:
and the memory is connected with the input current control module and used for storing the SOA curve graph.
In the present embodiment, a memory for storing an SOA graph of a MOSFET may be further provided in the protection apparatus. When the SOA curve diagram of the MOSFET is stored in the memory, and the input current control module controls the input current of the IC chip, the SOA curve diagram of the MOSFET can be called from the memory directly, and the input current of the IC chip is controlled according to the SOA curve diagram of the MOSFET and the target current change rate of the MOSFET, so that a tedious step that the input current controller calls the SOA curve diagram of the MOSFET from a remote end can be avoided, and the execution efficiency of the input current control module can be improved relatively.
Based on the above embodiments, this embodiment further describes and optimizes the technical solution, and as a preferred implementation, the current detection module includes:
the current detection unit is used for monitoring the running state of the MOSFET in the hot-plug server to obtain target running information;
and the logic calculation unit is used for determining the target current change rate of the MOSFET according to the target operation information.
It is understood that the target current change rate of the MOSFET cannot be directly measured by the current sensor, and therefore, the current detection module provided in this embodiment is provided with a current detection unit and a logic calculation unit inside thereof. The current detection module is used for monitoring the running state of the MOSFET in the hot-plug server to obtain target running information of the MOSFET, and then the logic calculation unit is used for determining the target current change rate of the MOSFET according to the target running information of the MOSFET, namely, the current change rate of the MOSFET in unit time is determined according to the target running information of the MOSFET.
Obviously, by the technical scheme provided by the embodiment, the accuracy of the current detection module in determining the current change rate of the MOSFET can be relatively improved.
Based on the foregoing embodiments, the present embodiment further describes and optimizes the technical solution, please refer to fig. 2, and fig. 2 is a structural diagram of a hot plug server according to an embodiment of the present invention. As a preferred embodiment, the IC chip includes: a precision resistor Rr, a current monitor, a current controller and a gate switch controller;
the first end of a precision resistor Rr is respectively connected with Vin, the first end of a first capacitor C1 in the hot-plug server and the first input end of a current monitor, the second end of the first capacitor C1 is grounded, the second end of the precision resistor Rr is respectively connected with the drain electrode of an MOSFET and the second input end of the current monitor, the output end of the current monitor is connected with the input end of a current controller, the output end of the current controller is connected with the input end of a gate switch controller, the output end of the gate switch controller is respectively connected with the grid electrode of the MOSFET and the first end of a first resistor R1 in the hot-plug server, the second end of the first resistor R1 is connected with the first end of a second capacitor C2 in the hot-plug server, the second end of the second capacitor C2 is grounded, the source electrode of the MOSFET is connected with the first end of a third capacitor C3 in the hot-plug server, and the second end of the third capacitor C3 is grounded;
correspondingly, the source of the MOSFET is the output end of the hot-plug server.
In the IC chip provided in this embodiment, if the input voltage Vin of the hot-swap server is 12V, in a normal operation state of the hot-swap server, the drain voltage VD of the MOSFET is 12V, and the source voltage VS of the MOSFET is equal to 12V, in this case, the voltage difference between the drain and the source of the MOSFET is 0; at the moment of large current of a hot-swap server, the input voltage Vin is 12V, the drain voltage VD of the MOSFET is 12V, the source voltage VS of the MOSFET is 0 due to short circuit or other reasons, and the voltage difference between the drain and the source of the MOSFET is 12V under ideal conditions.
However, in practical applications, at the moment when a large current is generated in the hot swap server, the voltage difference between the drain and the source of the MOSFET may reach 13.32V. Referring to fig. 3, fig. 3 is a schematic diagram of operating parameters of a MOSFET when subjected to a large current surge. When the voltage difference between the drain and the source of the MOSFET reaches 13.32V, the instantaneous current value inside the MOSFET reaches 75.2A, in which case the MOSFET can withstand the instantaneous current value 75.2A for a duration Δ T of 120 us. Referring to fig. 4, fig. 4 is a graph of an SOA of a MOSFET in the hot-swap server shown in fig. 2, when a voltage difference VDS between a drain and a source of the MOSFET is 13.32V, and a transient Current is 75.2A, a duration of the MOSFET under a large Current impact does not exceed 5 ms.
From the above analysis, when the MOSFET is subjected to a large current surge, the MOSFET will be in a safe state for the first 120us, but if the IC chip does not turn off the MOSFET within 5ms, the MOSFET will be burned out. In addition, the IC chip is influenced by internal parameters and errors of the IC chip in the process of turning off the MOSFET, so that the time for turning off the MOSFET by the IC chip is more unstable, and the MOSFET has great potential safety hazard.
Referring to fig. 5, fig. 5 is a structural diagram of another protection device applied to a hot plug server according to an embodiment of the present invention. As a preferred embodiment, the input current control module comprises: the circuit comprises a first AND gate, a comparator N and a switch control unit with a plurality of current output channels;
the output end of the comparator N is connected with the output end of the current monitor, the first input end of the comparator N is connected with the first input end of the first AND gate, the second input end of the comparator N is connected with the first input end of the current controller, the second input end of the current controller is connected with the trigger end of the first AND gate, the second input end of the first AND gate is connected with Vin, the output end of the first AND gate is connected with the input end of the switch control unit, and the output end of the switch control unit is connected with the first end of the precision resistor Rr;
correspondingly, the output signal of the current detection module is the reference signal of the comparator.
In the protection device provided in this embodiment, the IC chip shown in fig. 2 is improved, so as to further improve the safety and reliability of the MOSFET during operation. In the IC chip provided in this embodiment, an input current control module is added to the IC chip, wherein the input current control module includes a first and gate, a comparator, and a switch control unit having a plurality of current output channels.
In the IC chip shown in fig. 5, the current detection module is used for monitoring a target current change rate of the MOSFET, and after the current detection module monitors the target current change rate of the MOSFET, the target current change rate of the MOSFET is fed back to the comparator. If the MOSFET is normally operated, the current controller controls the IC chip according to the control mode in the prior art; if the operating current of the MOSFET is larger than the preset current, it indicates that the MOSFET is suffering from a large current, and at this time, the switch control unit in the input current control module selects a suitable current output channel to control the input current of the IC chip.
As a preferred embodiment, the current output values of the plurality of current output channels are reduced step by step according to a preset rule; and the maximum current output value of the current output channels is less than or equal to a target current value, and the target current value is a limit current value which can enable the MOSFET to safely operate according to the SOA curve graph and the target current change rate.
Specifically, in this embodiment, the current output values of the current output channels in the switch control unit are gradually decreased according to a rule defined by a user, and the maximum current output value of the current output channel in the switch control unit is less than or equal to a target current value, where the target current value is a limit current value that is calculated according to an SOA graph of the MOSFET and a target current change rate of the MOSFET and enables the MOSFET to safely operate.
In this case, the details are explained by the examples described in the above embodiments. In the IC chip shown in fig. 2, when the voltage difference VDS between the drain and the source of the MOSFET is 13.32V, the instantaneous Current value Current inside the MOSFET is 75.2A, and the duration Δ T of the MOSFET capable of withstanding the instantaneous Current value 75.2A is 120 us. Assume that there are three current output channels in the switch control unit, wherein the current output value of the first current output channel is 40A, the current output value of the second current output channel is 20A, and the current output value of the third current output channel is 15A.
When the operating Current of the MOSFET is greater than the preset Current, the input Current control module switches the input Current value of the IC chip to 40A, and the instantaneous Current value of the MOSFET is equal to 40A. Referring to fig. 6, fig. 6 is a SOA diagram of a MOSFET in the protection device shown in fig. 5. According to the parameters shown in fig. 6, when the input current value of the IC chip is switched to 40A, the duration that the MOSFET can be subjected to 40A current surge is 90ms, and compared with the previous duration that the MOSFET can be subjected to large current surge for 5ms, the input current control module can have more switching time of the current output channel by this arrangement, which is equivalent to the first protection of the MOSFET.
Then, the input Current control module switches the input Current value of the IC chip to 20A, and at this time, the instantaneous Current value Current inside the MOSFET is 20A, and it can be known from the parameters shown in fig. 6 that when the input Current value of the IC chip is switched to 20A, the duration of time for which the MOSFET can suffer from the 20A Current surge is not limited. In this case, even if the MOSFET is always in an operating state, the MOSFET is not burned by a large current, which corresponds to a second protection of the MOSFET. Of course, in practical applications, the user may also switch the input current value of the IC chip to 15A according to the needs of actual situations, which is not described in detail herein.
Obviously, the technical scheme provided by the embodiment can further improve the safety and reliability of the MOSFET in the operation process.
Correspondingly, the invention also discloses a hot plug server, which comprises the protection device applied to the hot plug server.
The hot-plug server provided by the embodiment of the invention has the beneficial effects of the protection device applied to the hot-plug server disclosed in the foregoing.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The protection device applied to the hot plug server and the hot plug server provided by the invention are described in detail above, a specific example is applied in the text to explain the principle and the implementation of the invention, and the description of the above embodiment is only used to help understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.

Claims (7)

1. A protection device applied to a hot plug server comprises an IC chip, and is characterized in that a current detection module and an input current control module are arranged on the IC chip;
the current detection module is used for monitoring the target current change rate of the MOSFET in the hot-plug server;
and the input current control module is used for controlling the input current of the IC chip according to the target current change rate and the SOA curve graph of the MOSFET so as to enable the MOSFET to work in a safe area when the operating current of the MOSFET is larger than the preset current.
2. The protection device of claim 1, further comprising:
and the memory is connected with the input current control module and used for storing the SOA curve graph.
3. The protection device of claim 1, wherein the current detection module comprises:
the current detection unit is used for monitoring the running state of the MOSFET in the hot plug server to obtain target running information;
a logic calculation unit for determining the target rate of change of the current of the MOSFET according to the target operation information.
4. The protection device according to any one of claims 1 to 3, wherein the IC chip includes: a precision resistor, a current monitor, a current controller and a gate switch controller;
wherein, the first end of the precision resistor is respectively connected with Vin, the first end of a first capacitor in the hot-plug server and the first input end of the current monitor, the second end of the first capacitor is grounded, the second end of the precision resistor is respectively connected with the drain electrode of the MOSFET and the second input end of the current monitor, the output end of the current monitor is connected with the input end of the current controller, the output end of the current controller is connected with the input end of a gate switch controller, the output end of the gate switch controller is respectively connected with the grid electrode of the MOSFET and the first end of a first resistor in the hot-plug server, the second end of the first resistor is connected with the first end of a second capacitor in the hot-plug server, the second end of the second capacitor is grounded, and the source electrode of the MOSFET is connected with the first end of a third capacitor in the hot-plug server, the second end of the third capacitor is grounded;
correspondingly, the source electrode of the MOSFET is the output end of the hot-plug server.
5. The protection device of claim 4, wherein the input current control module comprises: the circuit comprises a first AND gate, a comparator and a switch control unit with a plurality of current output channels;
the output end of the comparator is connected with the output end of the current monitor, the first input end of the comparator is connected with the first input end of the first AND gate, the second input end of the comparator is connected with the first input end of the current controller, the second input end of the current controller is connected with the trigger end of the first AND gate, the second input end of the first AND gate is connected with Vin, the output end of the first AND gate is connected with the input end of the switch control unit, and the output end of the switch control unit is connected with the first end of the precision resistor;
correspondingly, the output signal of the current detection module is the reference signal of the comparator.
6. The protection device according to claim 5, wherein the current output values of the plurality of current output channels are decreased step by step according to a preset rule; and the maximum current output value of the current output channels is less than or equal to a target current value, wherein the target current value is a limit current value which can enable the MOSFET to safely operate according to the SOA curve graph and the target current change rate.
7. A hot-plug server, characterized in that, it comprises a protection device applied to the hot-plug server according to any claim 1 to 6.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114389247A (en) * 2022-01-17 2022-04-22 苏州联讯仪器有限公司 Hot plug protection device, method, equipment and medium
CN114530829A (en) * 2022-02-25 2022-05-24 苏州浪潮智能科技有限公司 Hot-plug protection device and method for forward-looking dynamic temperature monitoring
EP4390620A1 (en) * 2022-12-19 2024-06-26 GE Precision Healthcare LLC Electromechanical mechanism for a spark-free electrical connection in an elevated oxygen environment

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