CN113741102A - 阵列基板、显示面板及制备方法 - Google Patents

阵列基板、显示面板及制备方法 Download PDF

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CN113741102A
CN113741102A CN202010468533.8A CN202010468533A CN113741102A CN 113741102 A CN113741102 A CN 113741102A CN 202010468533 A CN202010468533 A CN 202010468533A CN 113741102 A CN113741102 A CN 113741102A
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array substrate
pixel electrodes
signal line
conductive structure
substrate
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季雨
钱国平
冯磊
陈皖青
曾玲玲
黄先纯
周超
甘由鹏
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to PCT/CN2021/096237 priority patent/WO2021239033A1/zh
Priority to US17/764,256 priority patent/US20220375803A1/en
Publication of CN113741102A publication Critical patent/CN113741102A/zh
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134336—Matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
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    • G09G2300/00—Aspects of the constitution of display devices
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Abstract

本发明提供一种阵列基板、显示面板及制备方法，属于显示技术领域，其可解决现有的阵列基板的信号线与像素电极短接造成的点不良不易被发现的问题。本发明的阵列基板的制备方法，包括：通过构图工艺在基底上形成多个像素电极；部分所述像素电极通过导电结构连接；通过构图工艺在基底上形成信号线；所述信号线与所述像素电极同层设置。

Description

阵列基板、显示面板及制备方法
技术领域
本发明属于显示技术领域，具体涉及一种阵列基板、显示面板及制备方法。
背景技术
液晶显示面板为显示领域重要的组成部分，其显示技术按照显示原理可分为TN模式、IPS模式和VA模式，IPS技术又逐渐衍生出超维场转换技术(Advanced Super DimensionSwichl；ADS技术)。近年来，高级超维场转换技术(High Aperturen Advanced SuperDimensional Switching；HADS)产品由于具有高开口率、宽可视角优点而受到欢迎。
发明人发现现有的HADS显示产品中，如图1所示，像素电极与栅线同层设置，二者之间没有绝缘结构，在制备过程中，可能会因为材料残留而导致像素电极容易与栅线短路，出现像素点不良现象。但是在进行检测时，单个的像素点不良不容易被检测出来，而且即使在后续的AT(Array Test)检测时被检测出来，由于二者上方还有多层其它层结构，维修时可能会造成其他的显示不良现象。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提供一种能够提高阵列基板产品良率的阵列基板的制备方法。
解决本发明技术问题所采用的技术方案是一种阵列基板的制备方法，包括：
通过构图工艺在基底上形成多个像素电极和导电结构；沿第一方向排列的多个所述像素电极通过所述导电结构连接；
通过构图工艺在基底上形成信号线；
所述信号线与所述像素电极同层设置。
可选的，所述导电结构与所述像素电极同层设置且材料相同。
可选的，所述第一方向与所述信号线的延伸方向相同。
可选的，多个所述像素电极呈阵列排布；相同行的所述像素电极通过导电结构连接；
所述信号线沿所述阵列的行方向延伸。
可选的，所述阵列基板的制备方法还包括：对所述阵列基板进行信号线短接检测。
进一步可选的，在对所述阵列基板进行检测之后，还包括：
通过刻蚀工艺去除所述导电结构，以使不同所述像素电极之间绝缘断开。
进一步可选的，在对所述阵列基板进行检测之后，还包括：
在所述基底上形成绝缘层；
对所述绝缘层进行刻蚀，以使所述导电结构裸露；
在所述基底上形成公共电极层；
对形成有所述公共电极层的基底进行刻蚀，形成公共电极，并去除所述导电结构。
可选的，在去除所述导电结构之后，在对应所述导电结构的位置形成绝缘材料，以使相邻所述像素电极之间绝缘。
解决本发明技术问题所采用的技术方案是一种显示面板的制备方法，包括上述任意一种阵列基板的制备方法。
解决本发明技术问题所采用的技术方案是一种阵列基板，包括：基底，设置在所述基底上的多个像素电极和信号线；所述像素电极与所述信号线同层设置；像素电极所在层中，沿第一方向排列的多个相邻所述像素电极之间设置有过孔；
所述过孔将相邻的所述像素电极隔开，所述过孔中填充有绝缘材料。
本发明提供的阵列基板的制备方法中，在不仅形成像素电极，还形成导电结构，通过导电结构将多个像素电极连为一体。如此一来，在阵列基板的制备过程中，若信号线与某个像素电极发生由于材料残留而出现短接，在Gate OS测试时，使原本的单个像素电极与信号线短接所出现的点不良现象会变为线不良现象，从而实现对阵列基板的短接点不良现象的放大，以便于在Gate OS测试阶段即可测试出阵列基板的由于像素电极与信号线短接所导致的点不良现象的检测，实现阵列基板信号线短接不良的快速检测，提高阵列基板的制备效率和产品良率。
附图说明
图1为现有的阵列基板的制备方法中形成的阵列基板的示意图；
图2和图3为本发明的实施例的阵列基板的制备方法中对阵列基板进行检测时的阵列基板的示意图；
图4为本发明的实施例的阵列基板的制备方法所形成的阵列基板的示意图；
图5为本发明的实施例的阵列基板的制备方法中去除导电结构的步骤示意图；
图6为本发明的实施例的阵列基板的制备方法中去除导电结构的另一种步骤示意图；
其中，附图标记为：1、像素电极；2、信号线；3、导电结构；4、绝缘层(刻蚀阻挡层)；5、薄膜晶体管；6、公共电极；61、公共电极层；7、绝缘材料。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
实施例1：
如图2-6所示，本实施例提供一种阵列基板的制备方法，可适用于阵列基板，特别适用于HADS显示产品的阵列基板的制备。本实施例提供的制备方法所制备的阵列基板，能够快速发现阵列基板中像素电极1与信号线2的连接短路问题。本实施例提供的制备方法可包括以下步骤：
S11、通过构图工艺在基底上形成多个像素电极1和导电结构3；沿第一方向排列的多个像素电极1通过导电结构3连接。
其中，像素电极1的材料可包括ITO(Indium tin oxide；氧化铟锡)。
具体的，本步骤中，可通过沉积工艺在基底上形成导电材料层，并通过光刻、刻蚀等构图工艺形成图案化的像素电极1层，也即形成多个像素电极1。像素电极1可呈一定规则排布，例如阵列排布，或者环形排布等。
如图1所示，现有的阵列基板中，信号线2与像素电极1通常同层设置的，二者之间仅是简单的物理隔开，没有绝缘结构。基于一些现实制备工艺等因素的影响，在信号线2及像素电极1的制备过程中可能会存在材料残留，导致像素电极1与信号线2之间可能会出现短接，导致出现点不良现象。其中，现有技术中，在信号线2制备完成后虽然会进行Gate OS(open-short；开短路测试)测试步骤，但是由于像素电极1为单个独立的导电图形，当其与信号线2短接时出现点不良现象，Gate OS检测时并不易发现。这种点不良显示现象只能在后续的AT(Array Test)检测时被检测出来，也即在阵列基板上的多层其它结构制备完成后检测出来，但是由于此时已经有多层其它层结构位于像素电极1、信号线2所在层上方，维修时极易造成其他的显示不良现象。
如图2和图3所示，阵列基板中的像素电极1通常为规则排布。本实施例提供的制备方法中，不仅形成像素电极1，还形成导电结构3，通过导电结构3将多个像素电极1连为一体，具体可沿第一方向将排列的多个像素电极1通过导电结构3实现电连接。如此一来，如图3所示，在阵列基板的制备过程中，若信号线2与某个像素电极1发生由于材料残留(信号线材料残留或者像素电极材料残留)而出现短接，由于本实施例中多个像素电极1是通过导电结构3连接的，在Gate OS测试时，使原本的单个像素电极1与信号线2短接所出现的点不良现象会变为线不良现象，从而实现对阵列基板的短接点不良现象的放大，以便于阵列基板的由于像素电极1与信号线2短接所导致的点不良现象的检测。
其中，第一方向可为阵列的行方向或者列方向，或者环形排布的周向等。
优选的，本实施例中，导电结构3与像素电极1同层设置且材料相同。也就是说，为了简化阵列基板的制备工艺，可令导电结构3与像素电极1通过一次构图工艺形成。进一步的，如图3所示，由于导电结构3用于连接像素电极1，故可直接将像素电极1与导电结构3设计为一体结构。当然，可以理解的是，导电结构3也可以相对像素电极1单独制备，本实施例中对此不做具体限制。
在此需要说明的是，本实施例中，导电结构3仅是用于在阵列基板的制备阶段将像素电极1连接，在后续过程中需要将像素电极1断开。为了在后续步骤中，便于导电结构3的刻蚀，本实施中，导电结构3的尺寸优选不要太大，只要能够将像素电极1连接即可。
优选的，多个像素电极1呈阵列排布；相同行的像素电极1通过导电结构3连接。如图2所示，阵列基板中，多个独立的像素电极1多呈阵列分布，本实施例中，优选可将相同行的像素电极1通过导电结构3连接，从而将单个像素电极1与信号线2的短接所导致的点不良现象转换成一行像素电极1与信号线2短接造成的线不良现象。
S12、通过构图工艺在基底上形成信号线2；信号线2与像素电极1同层设置。
其中，信号线2可包括栅线(Gate line)。优选的，信号线2的材料可包括铜、银等导电性能较好的导电金属。具体的，本步骤中，可通过沉积、溅射等工艺在基底上形成导电材料层，再通过刻蚀工艺形成所需的信号线2的图形。在此需要说明的是，根据阵列基板的实际应用情况，信号线也可能是其它信号线，例如触控线等，本实施例中不做特别限制。
优选的，本实施例中，第一方向与信号线2的延伸方向相同。具体的，当像素电极1呈阵列排布时，信号线2的延伸方向可为像素电极1阵列的行方向或者列方向延伸。如图2所示，多条信号线2可沿像素电极1阵列的行方向延伸，列方向排布。此时，优选将相同行的像素电极1通过导电结构3连接。从而，当信号线2与像素电极1发生短接时，便于快速识别发生短接的像素电极1所在位置的大概范围，有利于不良点的快速排查。
现有技术中，特别是HADS显示产品中，栅线与像素电极1同层设置，二者之间不设置绝缘结构，而是通过空间上的分隔避免二者的连接。在此需要说明的是，本实施例中，像素电极1与信号线2同层设置是指二者在基底上物理意义上(或者说空间结构上)的同层，并非指制备工艺中的通过一次构图工艺制备。
可以理解的是，本实施例中，像素电极1的制备与信号线2的制备是独立分开的，且二者是同层设置，无需限制二者的制备先后顺序。因此，本实施例中，可先执行步骤S11、再执行步骤S12，或者可以先进行步骤S12，再执行步骤S11。
在阵列基本的制备过程中，基于不可控因素，信号线2与像素电极1可能会发生短接。基于本实施例提供的阵列基板的制备方法，能够在Gate OS阶段对阵列基板进行检测，快速通过所发现的线不良现象确定阵列基板是否存在信号线2与像素电极1的短接，实现阵列基板信号线短接不良的快速检测，提高阵列基板的制备效率和产品良率。
优选的，本实施例的阵列基板的制备方法还包括：S21、对阵列基板进行信号线2短接检测。
本步骤中，通过对阵列基板上的各信号线2进行信号线2短接检测，检测信号线2与像素电极1是否发生短接。具体的，本步骤中，在对阵列基板进行信号线2短接检测时，可向信号线2的第一端输入测试信号，并在信号线2的另一端接收测试信号。正常情况下，测试信号经单条信号线2传输后，其信号强度、幅值等并不会发生较大变化。如图2所示，本实施例提供的制备方法中，在进行信号线2短接检测时，多个像素电极1是通过导电结构3连接的状态，若信号线2与某一像素电极1发生短接，相当于与多个像素电极1同时发生短接，信号线2传输电阻变大，会导致测试信号在传输过程中发生较大幅度的衰减，也即相对没有与像素电极1发生短接的正常信号线2，发生短接的信号线2输出的检测信号异常现象较为明显，从而可根据接收端所接收检测到的测试信号强度检测出阵列基板的信号线2短接现象。
可以理解的是，在对阵列基板进行信号线2短接检测之后，可根据检测结构对阵列基板进行修复或者下一步的制备。可选的，本实施例中，在对阵列基板进行信号线2短接检测后，还包括对对不良进行修复的步骤。具体的，实施例中，可通过刻蚀工艺去除信号线2与像素电极1短接处的导电材料，从而使像素电极1与信号线2断开。本实施例中，在Gate OS检测阶段即可测试出信号线2与像素电极1的短接不良，在对存在不良的阵列基板进行修复时，过孔穿透的层结构较少，能够有效避免在修复过程中带来的其它不良问题。
同时，如图2所示，截至信号线2短接检测之时，阵列基板上的多个像素电极1是通过导电结构3连接的状态。可以理解的是，如图4所示，在检测结束之后，还需要将各像素电极1之间断开，以保证阵列基板的正常使用。本实施例中，可通过刻蚀工艺将导电结构3刻蚀去除，从而将相连的像素电极1断开。
可选的，如图5所示，本实施例中，可通过以下方式将像素电极1断开：
S221、在基底上形成刻蚀阻挡层4。
S222、通过刻蚀工艺在刻蚀阻挡层4上形成过孔，以使导电结构3裸露出来。
本步骤中，可通过光刻等工艺将对应导电结构3位置的绝缘层4材料除去，形成过孔，从而将导电结构3裸露出来。其中，过孔形状、大小、数量不受限制，只要能将导电结构3裸露出来，且在裸露的导电结构3去除后能将其所连接的像素电极1之间断开即可。
S223、通过刻蚀工艺去除对应过孔位置的导电结构3，以使不同像素电极1之间绝缘断开。
本步骤中，可通过湿法刻蚀等工艺将过孔处裸露的导电结构3去除，从而将先前通过导电结构3连接的像素电极1之间断开。
可以理解的是，本实施例中，阵列基板应当不仅仅包括像素电极1、信号线2，还可包括薄膜晶体管5、公共电极6等结构。其中，薄膜晶体管5可在像素电极1断开连接之后形成。其中，具体的，薄膜晶体管5、公共电极6等可在去除刻蚀阻挡层4后，在基底上继续制备形成。
作为一种优选实施方式，可选的，如图6所示，本实施例中，公共电极6的材料可与导电结构3采用同种材料形成，可在形成公共电极6的同时去除导电结构3。具体的，可包括以下步骤：
S231、在形成有信号线2的基底上形成绝缘层4。
本实施例中，可利用绝缘层4结构将信号线2、像素电极1等隔开。本步骤中，可在形成有信号线2的基底上形成绝缘层4，以便于后续在基底上继续制备其它器件结构，同时，该绝缘层4可作为后续刻蚀导电结构3时的刻蚀阻挡层4。
S232、在绝缘层4上形成薄膜晶体管5、数据线等结构。
S233、对绝缘层4进行刻蚀，形成过孔，以使导电结构3裸露出来。
其中，薄膜晶体管5及数据线(图中未示出)等结构与导电结构3在基底上的正投影优选不重叠，以便与导电结构3的去除。可以理解的是，薄膜晶体管5的各结构以及数据线等均为图案化的图形，本实施例中，当与导电结构3在基底上的正投影不重叠时，步骤S23与步骤S24可无先后顺序的限制，只要在形成公共电基层之前刻蚀掉部分绝缘层4，使导电结构3裸露即可。
S234、在基底上形成公共电极层61。
优选的，本实施例中，公共电极6的材料可与导电结构3的材料相同。具体的公共电极6的材料可包括ITO。
S235、通过一次刻蚀工艺对公共电极层61及过孔位置处的导电结构3进行刻蚀，以形成公共电极6，同时去除裸露的导电结构3。
本实施方式中，通过令公共电极6与导电结构3的材料相同，能够在形成公共电极6图案时，一次刻蚀去除连接像素电极1的导电结构3，从而简化阵列基板的制备工艺。
可以理解的是，形成薄膜晶体管5、公共电极6等结构的具体工艺，以及刻蚀工艺为本领域比较成熟的技术，具体可参考相关资料，本实施例中不再详述。
优选的，本实施例的制备方法包括：在将导电结构3去除之后，对应过孔位置形成绝缘材料7。也就是说，在去除导电结构3后，在原设置导电结构3的位置形成绝缘材料7，以保证像素电极1之间的绝缘状态，避免后续过程中有其它材料落入过孔中，造成像素电极1之间的短接。
实施例2：
本实施例提供一种显示面板的制备方法，包括实施例1提供的任意一种阵列基板的制备方法。
由于本实施例提供的制备方法包括实施例2提供的阵列基板的制备方法，故可在显示面板的制备过程中，快速通过所发现的线不良现象确定阵列基板是否存在信号线与像素电极的短接，实现阵列基板的快速检测，提高显示面板的制备效率和产品良率。
实施例3：
本实施例提供一种阵列基板，包括：基底，设置在基底上的多个像素电极1和信号线2；像素电极1与信号线2同层设置；像素电极1所在层中，沿第一方向排列的多个像素电极1之间设置有过孔；过孔中填充有绝缘材料7，将相邻的像素电极1隔开。
本实施例提供的阵列基板可由实施例1中提供的任意一种制备方法制备形成。故其中的过孔穿过的层数较少，由信号线2与像素电极1不良修复所带来的其它不良现象较少，产品良率较高。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

1.一种阵列基板的制备方法，其特征在于，包括：
通过构图工艺在基底上形成多个像素电极和导电结构；沿第一方向排列的多个所述像素电极通过所述导电结构连接；
通过构图工艺在基底上形成信号线；
所述信号线与所述像素电极同层设置。
2.根据权利要求1所述的阵列基板的制备方法，其特征在于，所述导电结构与所述像素电极同层设置且材料相同。
3.根据权利要求1所述的阵列基板的制备方法，其特征在于，所述第一方向与所述信号线的延伸方向相同。
4.根据权利要求1所述的阵列基板的制备方法，其特征在于，多个所述像素电极呈阵列排布；相同行的所述像素电极通过导电结构连接；
所述信号线沿所述阵列的行方向延伸。
5.根据权利要求1所述的阵列基板的制备方法，其特征在于，还包括：对所述阵列基板进行信号线短接检测。
6.根据权利要求5所述的阵列基板的制备方法，其特征在于，在对所述阵列基板进行检测之后，还包括：
通过刻蚀工艺去除所述导电结构，以使不同所述像素电极之间绝缘断开。
7.根据权利要求5所述的阵列基板的制备方法，其特征在于，在对所述阵列基板进行检测之后，还包括：
在所述基底上形成绝缘层；
对所述绝缘层进行刻蚀，以使所述导电结构裸露；
在所述基底上形成公共电极层；
对形成有所述公共电极层的基底进行刻蚀，形成公共电极，并去除所述导电结构。
8.根据权利要求6或7所述的阵列基板的制备方法，其特征在于，在去除所述导电结构之后，在对应所述导电结构的位置形成绝缘材料，以使相邻所述像素电极之间绝缘。
9.一种显示面板的制备方法，其特征在于，包括权利要求1至8中任意一项所述的阵列基板的制备方法。
10.一种阵列基板，包括：基底，设置在所述基底上的多个像素电极和信号线；所述像素电极与所述信号线同层设置；其特征在于，像素电极所在层中，沿第一方向排列的多个相邻所述像素电极之间设置有过孔；
所述过孔将相邻的所述像素电极隔开，所述过孔中填充有绝缘材料。
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