CN113735589A - SiC-HfB2Preparation method of double-layer composite material - Google Patents
SiC-HfB2Preparation method of double-layer composite material Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims description 18
- 239000000843 powder Substances 0.000 claims abstract description 117
- 229910003862 HfB2 Inorganic materials 0.000 claims abstract description 44
- 238000002156 mixing Methods 0.000 claims abstract description 36
- 238000005245 sintering Methods 0.000 claims abstract description 36
- 238000002360 preparation method Methods 0.000 claims abstract description 33
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000003825 pressing Methods 0.000 claims abstract description 18
- 239000008367 deionised water Substances 0.000 claims abstract description 15
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000002002 slurry Substances 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- 238000000227 grinding Methods 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 7
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 238000004321 preservation Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000004381 surface treatment Methods 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 8
- 239000002245 particle Substances 0.000 abstract description 4
- 238000009826 distribution Methods 0.000 abstract description 3
- 230000002349 favourable effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 abstract 7
- 239000002355 dual-layer Substances 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 47
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 46
- 238000005554 pickling Methods 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000011819 refractory material Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 210000003000 inclusion body Anatomy 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000011215 ultra-high-temperature ceramic Substances 0.000 description 1
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Abstract
The invention provides a preparation method of a SiC-HfB2 double-layer composite material, which comprises the steps of mixing SiC powder and HfO2Powder B4Respectively ultrasonically cleaning and drying the C powder with absolute ethyl alcohol to obtain SiC powder and HfO2Powder and B4Mixing the C powder with a first sintering aid, and performing pre-pressing to obtain a SiC pre-pressing layer, HfO2Powder and B4Mixing the C powder with a second sintering aid, mixing the mixture with deionized water to form slurry, covering the surface of the SiC pre-pressing layer, and pre-pressingFormation of SiC-HfO2‑B4C pre-pressed composition of SiC-HfO2‑B4Sintering the C pre-pressed assembly to obtain SiC-HfB2Two-layer composite material preparation, SiC-HfB2After the surface of the double-layer composite material preparation is treated, SiC-HfB is obtained2A two-layer composite material. SiC-HfB prepared by the preparation method of the invention2The double-layer composite material is favorable for avoiding directly adding HfB2HfB due to its poor sinterability2The particle distribution is not uniform, and the relative content is low, so that the SiC-HfB2 dual-layer composite material has the characteristics of high bonding strength, high hardness and the like.
Description
Technical Field
The invention relates to the technical field of inorganic non-metallic materials, in particular to SiC-HfB2A preparation method of a double-layer composite material.
Background
Silicon carbide is a carbide accidentally found in a laboratory by amazon of America in 1891 years of an electric melting diamond experiment, namely carbo-silica and carborundum, is an inorganic substance with a chemical formula of SiC, and rare mineral, namely morganite, also exists in the silicon carbide in nature. Among the non-oxide high-tech refractory materials such as C, N, B, silicon carbide is the most widely used and economical one, and may be called as corundum or refractory sand. Silicon carbide has four major application areas, namely: functional ceramics, high-grade refractory materials, grinding materials and metallurgical raw materials.
And HfB2As an ultra-high temperature ceramic with high melting point (3523K), high thermal conductivity coefficient, high hardness and good oxidation resistance and thermal shock resistance, the service life of the SiC-based coating in an extreme oxidation environment can be effectively improved. In addition, the oxidation product HfO2Can be used as a pinning phase, further improve the viscosity of the SiO2 glass film formed after oxidation, inhibit the formation and the propagation of cracks in the oxidation process, and cut off the contact between external oxygen and a carbon/carbon composite material matrix, thereby improving the high-temperature oxidation resistance of the matrix.
However, the prior art has the defects of complex preparation process (SAPS method), high cost (CVD method), weak bonding strength (SD/P method), difficult control of coating thickness (PC method), serious substrate damage (PC method) and the like. In addition, the conventional PC method can produce coating with poor sintering capability due to HfB2, and HfB2 particles in the coating are not uniformly distributed and have low relative content. Therefore, the SiC-HfB 2-based coating prepared by the traditional method is easy to generate thermal stress concentration and generate cracks in the preparation and oxidation processes, and finally the coating can fail, so that the SiC-HfB2 double-layer composite material has weak bonding strength and low hardness.
Disclosure of Invention
In view of the above, the present invention is directed to a SiC-HfB2Preparation method of double-layer composite material to prepare SiC-HfB with high hardness and high bonding strength2A two-layer composite material.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
SiC-HfB2A method of preparing a two-layer composite, the method comprising:
s1, mixing SiC powder and HfO2Respectively carrying out ultrasonic cleaning on the powder and the B4C powder, and drying;
s2, uniformly mixing the dried SiC powder with a first sintering aid, and prepressing to obtain a SiC pre-pressing layer; subjecting the HfO to2Uniformly mixing the powder, the B4C powder and a second sintering aid, mixing the mixture with deionized water to prepare slurry, coating the slurry on the surface of the SiC pre-pressing layer, and pre-pressing to prepare SiC-HfO2-B4C, prepressing the assembly;
s3, mixing the SiC-HfO2-B4Sintering the C pre-pressed assembly after wrapping the inclusion, taking out and cooling after the reaction is finished, and taking out SiC-HfB prepared in the inclusion2Prefabricating a body;
s4, mixing the SiC-HfB2Performing surface treatment on the prefabricated body to prepare SiC-HfB2A two-layer composite material.
Further, the SiC powder, the HfO powder and the like in step S12Powder and the B4The mass ratio of the C powder is 2.5-3: 5-9: 0.5 to 1.5.
Further, in step S1, the grain size of the SiC powder is 5nm to 800 μm; the HfO2The grain diameter is 800-1000 μm.
Further, in step S1, silicon or graphite is used as the first sintering aid, and graphite is used as the second sintering aid.
Further, the mass ratio of the SiC powder to the first sintering aid in step S2 is 38 to 40: 1; the HfO2Powder and said B4The mass ratio of the total mass of the C powder to the mass of the second sintering aid to the mass of the deionized water is 25-30: 1: 5 to 8.
Further, the inclusion body is made of hafnium in step S3.
Further, in the step S3, the sintering pressure is 18-30 Gpa, the sintering temperature is 1800-2200 ℃, and the sintering heat preservation time is 5-6 hours.
Further, the SiC-HfB prepared in step S42The thickness of the double-layer composite material is 320-400 mu m.
Further, in step S1, the SiC powder and the HfO are treated with absolute ethanol2Powder and the B4And C, carrying out ultrasonic cleaning on the powder C, wherein the drying temperature after cleaning is 130-140 ℃.
Further, the SiC-HfB is performed in step S42And (3) grinding and polishing the surface of the preform, and then cleaning the surface of the preform by using an acid solution.
Compared with the prior art, the invention has the following advantages:
the invention adopts SiC powder and HfO2The powder and the B4C powder are used as raw materials and are subjected to in-situ reaction under the action of an auxiliary agent and high-temperature sintering to generate HfB2And CO2Is favorable for avoiding directly adding HfB2HfB due to its poor sinterability2Uneven particle distribution and low relative content, and CO2Good fluidity in high temperature environment, and plays a role in synergistically adjusting the overall compactness of the coating, thereby enabling SiCThe HfB2 double-layer composite material has the advantages of high bonding strength, high hardness and the like.
The invention uses the inclusion to mix SiC-HfO2-B4The C pre-pressing assembly wraps, can better protect the sample, and prevent the sample from being polluted or mixed with impurities at high temperature and high pressure, so that the forming effect is ensured.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate an embodiment of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 shows an example of an SiC-HfB device according to the present invention2A flow diagram of a method of preparing a two-layer composite;
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "back", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. In addition, unless otherwise specified, all terms and processes related to the present embodiment should be understood according to the conventional knowledge and conventional methods in the art.
The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
Example one
1. Mixing SiC powder and HfO2Powder B4Respectively ultrasonically cleaning the C powder with absolute ethyl alcohol, and drying at the temperature of 130 ℃, wherein the SiC powder and the HfO2Powder and B4The mass ratio of the C powder is 2.5: 5: 0.5, the grain size of the SiC powder is 5nm, HfO2The grain size of the powder was 800 μm.
2. Uniformly mixing the dried SiC powder with Si, wherein the mass ratio is 38: 1, carrying out prepressing forming to obtain a SiC prepressing layer; to mix HfO2Powder and B4Mixing the C powder and graphite uniformly, and mixing with deionized water to form slurry, wherein the HfO powder is2Powder and B4The mass ratio of the total mass of the C powder to the second sintering aid to the deionized water is 25: 1: 5, coating the mixture on the surface of the SiC prepressing layer, and prepressing and forming again to form SiC-HfO2-B4C, pre-pressing the assembly.
3. Using a hafnium metal shell with exhaust passages to convert the resulting SiC-HfO2-B4And (3) wrapping the C prepressing assembly, putting the wrapped C prepressing assembly into a cubic press, and fully reacting for 6 hours under the conditions that the pressure is 18Gpa and the sintering temperature is 1800 ℃. And taking out after the reaction is finished, removing the wrapping material wrapped outside the sample, and cooling to room temperature to obtain the SiC-HfB2 double-layer composite material preparation body.
4. Taking out the SiC-HfB2 double-layer composite material preparation body, and putting the preparation body on a grinding machine for grinding and polishing; and then, putting the polished sample into a pickling tank for pickling to obtain the SiC-HfB2 double-layer composite material. The thickness of the obtained SiC-HfB2 double-layer composite material is 320-400 mu m through detection.
Example two
1. Mixing SiC powder and HfO2Powder B4Respectively ultrasonically cleaning the C powder with absolute ethyl alcohol, and drying at 140 ℃, wherein the SiC powder and the HfO2Powder and B4The mass ratio of the C powder is 3: 9: 1.5, the grain size of SiC powder adopts 800 μm, HfO2The grain size of the powder was 1000. mu.m.
2. Uniformly mixing the dried SiC powder with Si, wherein the mass ratio is 38: 1, carrying out prepressing forming to obtain a SiC prepressing layer; to mix HfO2Powder and B4Mixing the C powder and graphite uniformly, and mixing with deionized water to form slurry, wherein the HfO powder is2Powder and B4The mass ratio of the total mass of the C powder to the second sintering aid to the deionized water is 30: 1: 8, coating the mixture on the surface of the SiC prepressing layer, and performing prepressing forming again to form SiC-HfO2-B4C, pre-pressing the assembly.
3. Using a hafnium metal shell with exhaust passages to convert the resulting SiC-HfO2-B4And C, wrapping the pre-pressing assembly, putting the wrapped assembly into a cubic press, and fully reacting for 5 hours under the conditions that the pressure is 18Gpa and the sintering temperature is 2200 ℃. And taking out after the reaction is finished, removing the wrapping material wrapped outside the sample, and cooling to room temperature to obtain the SiC-HfB2 double-layer composite material preparation body.
4. Taking out the SiC-HfB2 double-layer composite material preparation body, and putting the preparation body on a grinding machine for grinding and polishing; and then, putting the polished sample into a pickling tank for pickling to obtain the SiC-HfB2 double-layer composite material. The thickness of the obtained SiC-HfB2 double-layer composite material is 320-400 mu m through detection.
EXAMPLE III
1. Mixing SiC powder and HfO2Powder B4Respectively ultrasonically cleaning the C powder with absolute ethyl alcohol, and drying at the temperature of 130 ℃, wherein the SiC powder and the HfO2Powder and B4The mass ratio of the C powder is 2.8: 7: 1, the grain size of the SiC powder is 300 mu m, HfO2The grain size of the powder was 900 μm.
2. Uniformly mixing the dried SiC powder with Si, wherein the mass ratio is 39: 1, carrying out prepressing forming to obtain a SiC prepressing layer; to mix HfO2Powder and B4Mixing the C powder and graphite uniformly, and mixing with deionized water to form slurry, wherein the HfO powder is2Powder and B4The mass ratio of the total mass of the C powder to the second sintering aid to the deionized water is 26: 1: 6, coating the mixture on the surface of the SiC prepressing layer, and prepressing and forming again to form SiC-HfO2-B4C, pre-pressing the assembly.
3. Using a hafnium metal shell with exhaust passages to convert the resulting SiC-HfO2-B4And C, wrapping the pre-pressing assembly, putting the wrapped assembly into a cubic press, and fully reacting for 5 hours under the conditions that the pressure is 28Gpa and the sintering temperature is 1900 ℃. And taking out after the reaction is finished, removing the wrapping material wrapped outside the sample, and cooling to room temperature to obtain the SiC-HfB2 double-layer composite material preparation body.
4. Taking out the SiC-HfB2 double-layer composite material preparation body, and putting the preparation body on a grinding machine for grinding and polishing; and then, putting the polished sample into a pickling tank for pickling to obtain the SiC-HfB2 double-layer composite material. The thickness of the obtained SiC-HfB2 double-layer composite material is 320-400 mu m through detection.
Example four
1. Mixing SiC powder and HfO2Powder B4Respectively ultrasonically cleaning the C powder with absolute ethyl alcohol, and drying at 140 ℃, wherein the SiC powder and the HfO2Powder and B4The mass ratio of the C powder is 2.9: 8: 1.3, the grain size of the SiC powder adopts 600 mu m, HfO2The grain size of the powder was 950 μm.
2. Uniformly mixing the dried SiC powder with Si, wherein the mass ratio is 39: 1, carrying out prepressing forming to obtain a SiC prepressing layer; to mix HfO2Powder and B4Mixing the C powder and graphite uniformly, and mixing with deionized water to form slurry, wherein the HfO powder is2Powder and B4The mass ratio of the total mass of the C powder to the second sintering aid to the deionized water is 28: 1: 7, coating the mixture on the surface of the SiC prepressing layer, and performing prepressing forming again to form SiC-HfO2-B4C, pre-pressing the assembly.
3. Using a hafnium metal shell with exhaust passages to convert the resulting SiC-HfO2-B4And (3) wrapping the C prepressing assembly, putting the wrapped C prepressing assembly into a cubic press, and fully reacting for 5 hours under the conditions that the pressure is 30Gpa and the sintering temperature is 2100 ℃. And taking out after the reaction is finished, removing the wrapping material wrapped outside the sample, and cooling to room temperature to obtain the SiC-HfB2 double-layer composite material preparation body.
4. Taking out the SiC-HfB2 double-layer composite material preparation body, and putting the preparation body on a grinding machine for grinding and polishing; and then, putting the polished sample into a pickling tank for pickling to obtain the SiC-HfB2 double-layer composite material. The thickness of the obtained SiC-HfB2 double-layer composite material is 320-400 mu m through detection.
EXAMPLE five
1. Mixing SiC powder and HfO2Powder B4Ultrasonic cleaning the powder C with anhydrous ethanol respectively at 135 deg.CDrying under the condition of the workpiece, wherein SiC powder and HfO2Powder and B4The mass ratio of the C powder is 2.9: 9: 1.5, the grain size of SiC powder adopts 800 μm, HfO2The grain size of the powder was 900 μm.
2. Uniformly mixing the dried SiC powder with Si, wherein the mass ratio is 38.5: 1, carrying out prepressing forming to obtain a SiC prepressing layer; to mix HfO2Powder and B4Mixing the C powder and graphite uniformly, and mixing with deionized water to form slurry, wherein the HfO powder is2Powder and B4The mass ratio of the total mass of the C powder to the second sintering aid to the deionized water is 29: 1: 8, coating the mixture on the surface of the SiC prepressing layer, and performing prepressing forming again to form SiC-HfO2-B4C, pre-pressing the assembly.
3. Using a hafnium metal shell with exhaust passages to convert the resulting SiC-HfO2-B4And (3) wrapping the C prepressing assembly, putting the wrapped C prepressing assembly into a cubic press, and fully reacting for 6 hours under the conditions that the pressure is 25Gpa and the sintering temperature is 2000 ℃. And taking out after the reaction is finished, removing the wrapping material wrapped outside the sample, and cooling to room temperature to obtain the SiC-HfB2 double-layer composite material preparation body.
4. Taking out the SiC-HfB2 double-layer composite material preparation body, and putting the preparation body on a grinding machine for grinding and polishing; and then, putting the polished sample into a pickling tank for pickling to obtain the SiC-HfB2 double-layer composite material. The thickness of the obtained SiC-HfB2 double-layer composite material is 320-400 mu m through detection.
The invention adopts SiC powder and HfO2The powder and the B4C powder are used as raw materials and are subjected to in-situ reaction under the action of an auxiliary agent and high-temperature sintering to generate HfB2And CO2Is favorable for avoiding directly adding HfB2HfB due to its poor sinterability2Uneven particle distribution and low relative content, and CO2The coating has good fluidity in a high-temperature environment, and plays a role in synergistically adjusting the overall compactness of the coating. Use of inclusions to encapsulate SiC-HfO2-B4The C pre-pressing assembly wraps the sample, so that the sample can be well protected, the sample is prevented from being polluted or mixed with impurities at high temperature and high pressure, and the base is reduced by polishing and acid washingAnd (4) successfully preparing the SiC-HfB2 double-layer composite material with the thickness of 320-400 mu m by body damage. The method has simple process, and overcomes the problems of weak bonding strength and difficult control of coating thickness of the SiC-HfB2 double-layer composite material in the traditional process.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. SiC-HfB2The preparation method of the double-layer composite material is characterized by comprising the following steps:
s1, mixing SiC powder and HfO2Respectively carrying out ultrasonic cleaning on the powder and the B4C powder, and drying;
s2, uniformly mixing the dried SiC powder with a first sintering aid, and prepressing to obtain a SiC pre-pressing layer; subjecting the HfO to2Uniformly mixing the powder, the B4C powder and a second sintering aid, mixing the mixture with deionized water to prepare slurry, coating the slurry on the surface of the SiC pre-pressing layer, and pre-pressing to prepare SiC-HfO2-B4C, prepressing the assembly;
s3, mixing the SiC-HfO2-B4Sintering the C pre-pressed assembly after wrapping the inclusion, taking out and cooling after the reaction is finished, and taking out SiC-HfB prepared in the inclusion2Prefabricating a body;
s4, mixing the SiC-HfB2Performing surface treatment on the prefabricated body to prepare SiC-HfB2A two-layer composite material.
2. The SiC-HfB of claim 12The preparation method of the double-layer composite material is characterized by comprising the following steps: the SiC powder and the HfO in step S12Powder and the B4The mass ratio of the C powder is 2.5-3: 5-9: 0.5 to 1.5.
3. The SiC-HfB of claim 12Preparation method of double-layer composite materialThe method is characterized in that: in step S1, the grain diameter of the SiC powder is 5 nm-800 μm; the HfO2The grain diameter is 800-1000 μm.
4. The SiC-HfB of claim 12The preparation method of the double-layer composite material is characterized by comprising the following steps:
in step S1, the first sintering aid is silicon or graphite, and the second sintering aid is graphite.
5. The SiC-HfB of claim 42The preparation method of the double-layer composite material is characterized by comprising the following steps:
the mass ratio of the SiC powder to the first sintering aid in the step S2 is 38-40: 1; the HfO2Powder and said B4The mass ratio of the total mass of the C powder to the mass of the second sintering aid to the mass of the deionized water is 25-30: 1: 5 to 8.
6. The SiC-HfB of claim 12The preparation method of the double-layer composite material is characterized by comprising the following steps:
in step S3, the inclusion is made of hafnium.
7. The SiC-HfB of claim 12The preparation method of the double-layer composite material is characterized by comprising the following steps:
in the step S3, the sintering pressure is 18-30 Gpa, the sintering temperature is 1800-2200 ℃, and the sintering heat preservation time is 5-6 hours.
8. The SiC-HfB of claim 12The preparation method of the double-layer composite material is characterized by comprising the following steps:
the SiC-HfB prepared in step S42The thickness of the double-layer composite material is 320-400 mu m.
9. The SiC-HfB of claim 12The preparation method of the double-layer composite material is characterized by comprising the following steps:
in step S1, the SiC powder and the HfO are treated by absolute ethyl alcohol2Powder and the B4And C, carrying out ultrasonic cleaning on the powder C, wherein the drying temperature after cleaning is 130-140 ℃.
10. The SiC-HfB of any of claims 1 to 92The preparation method of the double-layer composite material is characterized by comprising the following steps:
SiC-HfB in step S42And (3) grinding and polishing the surface of the preform, and then cleaning the surface of the preform by using an acid solution.
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