CN113659044B - Cleaner and method for improving conversion efficiency of heterojunction solar cell - Google Patents
Cleaner and method for improving conversion efficiency of heterojunction solar cell Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 32
- 238000004140 cleaning Methods 0.000 claims abstract description 72
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 23
- 239000002957 persistent organic pollutant Substances 0.000 claims abstract description 8
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A cleaner and a method for improving the conversion efficiency of a heterojunction solar cell belong to the field of solar cells. The method for improving the conversion efficiency of the heterojunction solar cell comprises the following organic matter removing operation after the monocrystalline silicon wafer of the heterojunction solar cell is textured and before the amorphous silicon layer is manufactured when the heterojunction solar cell is manufactured: and irradiating the monocrystalline silicon wafer subjected to texturing by using ultraviolet rays, wherein the cleaning solution and/or the cleaning tank is used for cleaning the monocrystalline silicon wafer subjected to texturing, and organic pollutants in the cleaning solution and/or the cleaning tank are correspondingly decomposed through photochemical reaction to be removed or reduced. The scheme can improve the conversion efficiency of the heterojunction solar cell.
Description
Technical Field
The application relates to the field of solar cells, in particular to a cleaner and a method for improving the conversion efficiency of a heterojunction solar cell.
Background
The power generation efficiency and the power generation cost are important propositions of the photovoltaic industry.
The power generation efficiency includes conversion efficiency and stability thereof. The conversion efficiency is related to the conversion efficiency of the individual battery cells and the packaging technology of the assembly. Among various heterojunction cells, a cell having relatively high conversion efficiency is, for example, a heterojunction.
How to optimize to further optimize the conversion efficiency of heterojunction cells is a challenge.
Disclosure of Invention
The present application provides a cleaner and a method of improving the conversion efficiency of a heterojunction solar cell, which can partially or wholly improve, or even solve the problem of the conversion efficiency of the heterojunction solar cell in the related art.
The application is realized in such a way that:
in a first aspect, examples of the present application provide a method of improving the conversion efficiency of a heterojunction solar cell, wherein the heterojunction solar cell comprises a monocrystalline silicon layer and amorphous silicon layers on both sides thereof, respectively.
And, the method comprises, in fabricating the heterojunction solar cell, after texturing the monocrystalline silicon wafer and before fabricating the amorphous silicon layer, performing the following organic matter removal operation using ultraviolet rays:
and irradiating the monocrystalline silicon wafer subjected to texturing by using ultraviolet rays, wherein the cleaning solution and/or the cleaning tank is used for cleaning the monocrystalline silicon wafer subjected to texturing, and organic pollutants in the cleaning solution and/or the cleaning tank are correspondingly decomposed through photochemical reaction to be removed or reduced.
According to some examples of the present application, the organic removal operation is performed before the monocrystalline silicon piece after the texturing is entered into the cleaning tank; alternatively, the organic removal operation is performed before or during the entry of the cleaning liquid into the cleaning tank.
According to some examples of the present application, irradiating with ultraviolet light is performed as continuous irradiation; alternatively, the irradiation with ultraviolet light is performed intermittently.
According to some examples of the present application, the irradiation with ultraviolet light is performed intermittently at a fixed frequency.
According to some examples of the present application, the wavelength of ultraviolet light is 185nm.
According to some examples of the present application, the de-organing operation improves minority carrier lifetime in heterojunction solar cells.
In a second aspect, examples of the present application provide a washer for implementing the above-described method of improving heterojunction solar cell conversion efficiency.
The cleaner comprises:
the groove body is provided with a bottom wall and a side wall and jointly encloses a groove cavity defined with the depth direction;
the liquid inlet connector is arranged on the bottom wall or the side wall and is close to the bottom wall, and is configured to provide cleaning liquid for the groove cavity along the direction crisscrossed with the depth direction;
an ultraviolet generating mechanism is held in the tank body and configured to emit ultraviolet rays toward the inside of the tank cavity.
According to some examples of the present application, the slot cavity is open; alternatively, the tank cavity is closed, and the cleaner further comprises a cover body which is matched with the side wall of the tank body to close the tank cavity.
According to some examples of the application, the cover body is provided with an overflow joint for the cleaning liquid in the tank cavity to flow out of the tank cavity; or the cover body is detachably connected with the side wall; alternatively, the ultraviolet generating mechanism is fixed to the cover.
According to some examples of the present application, an ultraviolet generating mechanism is fixed to the bottom wall and/or the side wall;
alternatively, the washer further comprises a switch electrically connected to the ultraviolet generating mechanism for selectively switching on or off the connection of the ultraviolet generating mechanism to the power supply;
or, the device also comprises a switch and a frequency generation mechanism, wherein the switch is electrically connected with the ultraviolet generation mechanism through the frequency generation mechanism, and the frequency generation mechanism is used for generating an on-off signal with a set fixed frequency so as to enable the switch and the ultraviolet generation mechanism to be electrically connected on or off at the fixed frequency.
In the implementation process, the method and the device provided by the embodiment of the application provide the cleaning environment without organic pollutants or with less inorganic pollutants for the cleaning process of the monocrystalline silicon wafer after the texturing, so that the pollution or the pollution degree of the monocrystalline silicon wafer after the texturing by the organic pollutants is avoided or reduced, the quality (such as few defects, high interface quality and the like) of the amorphous silicon layer manufactured on the basis of the monocrystalline silicon wafer after the texturing and the clarity is improved, and the electrical performance of the battery such as conversion efficiency is improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below.
Fig. 1 is a schematic structural diagram of a silicon heterojunction solar cell fabricated in an embodiment of the present application;
FIG. 2 is a graph showing the change in resistivity and minority carrier lifetime of pure water for cleaning a silicon wafer irradiated with ultraviolet rays in the example of the present application;
fig. 3 shows a schematic structural diagram of a washer for implementing a method of improving the conversion efficiency of a heterojunction solar cell in the example of the present application.
Icon: 110—a surface silver electrode; 111-surface transparent conductive oxide; 112-surface n+ doped amorphous silicon; 113-surface intrinsic amorphous silicon; 114-back intrinsic amorphous silicon; 115-back p+ doped amorphous silicon; 116-back transparent conductive oxide; 117-backside silver electrode; 201-a groove body; 2011-sidewalls; 2012-a bottom wall; 202-ultraviolet generating mechanism.
Detailed Description
The general structure of heterojunction solar cells can be seen in fig. 1. The heterojunction solar cell shown in the figure is based on N-type monocrystalline silicon, and forms heterojunction by amorphous layers on both sides respectively with the heterojunction solar cell as a substrate, and forms a structure of a double-sided cell.
From the direction shown in fig. 1, there are, from above to below, a surface silver electrode 110, a surface transparent conductive oxide 111, a surface n+ doped amorphous silicon 112, a surface intrinsic amorphous silicon 113, an N doped monocrystalline silicon (i.e., N-type monocrystalline silicon), a back intrinsic amorphous silicon 114, a back p+ doped amorphous silicon 115, a back transparent conductive oxide 116, and a back silver electrode 117, respectively.
In the current process of fabricating heterojunction solar cells, for example, the following procedures are implemented: texturing, amorphous silicon, TCO, screen printed electrodes and testing.
The texturing process is, for example, approximately: the pre-cleaning, the damage removal, the SC1 (Standard Clean 1), the texturing, the SC1 (Standard Clean 1), the CP (Chemical Polish), the HF cleaning (using diluted hydrofluoric acid DHF), and the baking are sequentially performed.
More specifically, the texturing process is generally as follows: the pre-cleaning, water tank, damage removing, water tank, SC1, water tank, texturing, water tank, SC1, water tank, CP, water tank, HF tank, water tank and drying are sequentially carried out.
One of the main purposes of texturing is to remove dirt and damaged layers from the surface of a silicon wafer and to form a surface texture. As far as the inventor of the application knows, the current heterojunction solar cell generally adopts an N-type silicon wafer to form a pyramid on the surface of the silicon wafer in an alkali texturing mode, and organic matters on the surface, chemical polishing and the like are cleaned after texturing.
Among them, the cleaning step after the texturing is generally called "post-cleaning" and the first step of the post-cleaning step is generally SC1 cleaning. The practical inventor finds that the operation performed after the texturing, namely post-cleaning, can influence the conversion efficiency of the heterojunction solar cell prepared based on the method to a certain extent. As a result of the studies, the inventors considered that one possible cause thereof is that organic contamination occurs in the post-cleaning operation. For example, organic additives on the surface of the wafer, which are not cleaned or which are contaminated during subsequent cleaning. Then, when the amorphous silicon plating film is subsequently performed, organic contaminants on the surface of the silicon wafer will seriously affect the interface properties thereof, thereby forming defects and ultimately affecting (deteriorating) the conversion efficiency of the battery.
Therefore, in the texturing process of the heterojunction solar cell manufacturing process, after the SC1 and the subsequent process grooves, especially after the CP (chemical polishing groove), if the adhesion of the organic matters exists, the subsequent grooves will not have the capability of cleaning the organic matters.
In addition, when pure water used in the battery manufacturing process stands in a separate factory building, the pure water is required to be conveyed to the factory building by a pipeline in production, and the conveying pipeline is long (for example, 100-200 m), so that the pure water is difficult to be polluted by a small amount of organic matters in the conveying process. Even if a small amount of pollution is brought into the tank body in the post-cleaning step, organic pollution can be caused on the surface of the silicon wafer, so that the passivation of the amorphous silicon coating is influenced, and finally the conversion efficiency of the battery is influenced.
In view of such problems and analytical studies, the inventors have proposed a solution (at least capable of alleviating the above problems) and have verified that by eliminating or reducing organic contamination, amorphous minority carrier lifetime/reduced amorphous minority carrier lifetime fluctuations of heterojunction solar cells can be stabilized, and accordingly conversion efficiency of the cells can also be stabilized (improved or at least not degraded).
According to the above analysis, organic contamination may be mainly introduced because pure water is contaminated, and these contaminants may also adhere to the inside of various washing tanks. One indicator of the organic content of a measured amount of water is total organic carbon TOC (Total Organic Carbon); which characterizes the organic content of pure water. Therefore, irradiation of pure water or equipment tanks by ultraviolet lamps is selected in the examples of the present application. Since ultraviolet rays are high-energy rays, organic matters in pure water are decomposed into water and carbon dioxide after being irradiated by the ultraviolet rays, and carbon dioxide reduces the resistivity (improves the electric conductivity) of the pure water in water.
Then, if the resistivity of pure water is significantly lowered under irradiation with ultraviolet lamp, it means that the TOC content in pure water before irradiation is high. And at the same time, it is known that organic contaminants in pure water can be removed by ultraviolet irradiation.
The reason why ultraviolet lamp irradiation is used in the examples of the present application is that:
the heterojunction solar cell is very sensitive to the organic content in pure water in the post-cleaning step of cleaning and texturing. When the organic content in the pure water exceeds 20ppb, amorphous silicon minority carriers are adversely affected, thereby negatively affecting the final efficiency.
And the ultraviolet rays irradiate the pure water to decompose the organic matters in the pure water, so that the organic matter content in the pure water is reduced. Therefore, the organic pollution can be removed by the irradiation of ultraviolet rays, and the adverse effect on the battery is reduced. As shown in FIG. 2, the minority carrier lifetime after texturing is improved from 72 μs and 73 μs to 90 μs and 102 μs. And, after the subsequent fabrication of amorphous silicon, minority carrier lifetime can be increased from 1500 μs to 2000 μs to 1700 μs to 2200 μs.
Ultraviolet irradiation/cleaning mainly uses the photo-sensitive oxidation of organic compounds to achieve removal of these organic materials. For example, ultraviolet light may employ a UV light source that emits light waves having wavelengths of 185nm and 254 nm. The ultraviolet rays of the above wavelengths have high energy, and when these photons act on organic matters, most of hydrocarbon compounds have strong absorption energy for ultraviolet rays of 185nm wavelength therein, and decompose into ions, free atoms, excited molecules and neutrons after absorbing the energy of ultraviolet rays of 185nm wavelength, so that so-called photosensitization occurs. Therefore, the organic matters in the pure water are decomposed through the photosensitive effect, and the aim of reducing the impurity content of the organic matters in the pure water can be achieved. Also based on this, the ultraviolet irradiation removal of the organic contaminant can be selectively performed in the "water tank, CP, water tank, HF tank, water tank" cleaning step.
Briefly, referring to fig. 2, in the fabrication process of the heterojunction solar cell, when ultraviolet rays irradiate pure water, if the resistivity of the pure water is reduced, it is indicated that organic contaminants exist in the pure water. These ultraviolet radiation can remove organics and correspondingly increase minority carrier lifetime of the battery. Therefore, the ultraviolet irradiation of pure water can not only function to detect the presence or absence of organic impurities in pure water, but also decompose these impurities in the case where the presence of organic impurities is confirmed.
Based on the above knowledge, in the examples of the present disclosure, the inventors propose a method that can be used to improve the heterojunction solar cell conversion efficiency. The method is mainly implemented in a mode of reducing organic pollution of the heterojunction solar cell in the manufacturing process. In addition, based on the foregoing analysis, the inventors believe that removal of organic contamination may be primarily focused on post-cleaning operations after wafer texturing.
Thus, the solution in the example includes, when manufacturing a heterojunction solar cell (the heterojunction solar cell includes a monocrystalline silicon layer and amorphous silicon layers formed on both sides thereof, respectively), performing the following organic removal operation using ultraviolet rays after texturing the monocrystalline silicon wafer and before manufacturing the amorphous silicon layers: the cleaning solution and/or the cleaning tank for cleaning the monocrystalline silicon piece after texturing is irradiated by ultraviolet rays (for example, the wavelength is selected to be 185 nm), so that organic pollutants in the cleaning solution and/or the cleaning tank are correspondingly decomposed by photochemical reaction to be removed or reduced.
The organic matter removing operation by ultraviolet rays can be performed before the monocrystalline silicon piece after the wool is made enters the cleaning tank or before or during the cleaning liquid enters the cleaning tank according to the need or according to the difficulty of the equipment reconstruction or based on the factors such as cost. The present application is not particularly limited thereto.
In addition, there are various alternatives to the irradiation method of ultraviolet rays. For example, the ultraviolet rays may be irradiated to the water body or the tank relatively stationary, or the ultraviolet rays may be irradiated to the water body or the tank relatively movable. In these examples, the washer may be configured with a displacement mechanism for driving the ultraviolet generating mechanism in motion.
In other examples, when ultraviolet irradiation is used, ultraviolet irradiation may be performed by continuous irradiation or may be performed by intermittent irradiation. For example, the silicon wafer may be irradiated with ultraviolet rays throughout the step of the SC1 cleaning operation, or the irradiation may be suspended for a while after the irradiation for a while, and then the irradiation may be continued. Further, in the intermittent irradiation scheme, the ultraviolet irradiation may be performed by intermittent irradiation at a fixed frequency.
In order to implement the above-mentioned organic removal operation, a washer for implementing the method for improving the conversion efficiency of the heterojunction solar cell is also provided in the example, and the structure thereof is shown in fig. 3.
The cleaner includes a tank 201, a liquid inlet connector (not shown), and an ultraviolet generating mechanism 202. The tank 201 is a structure for receiving the cleaning liquid fed from the liquid feed connector and allowing the silicon wafer to be cleaned therein. The ultraviolet generating mechanism 202 is used for introducing ultraviolet rays into the tank 201 so as to remove organic pollutants from the tank 201, which may contact with the silicon wafer or adhere to the organic pollutants to pollute the inner wall of the silicon wafer and/or the cleaning solution in the tank.
The tank 201 has a bottom wall 2012 and a side wall 2011, and both enclose and form a tank cavity defining a depth direction. During the cleaning operation, the chamber contains cleaning fluid while the wafer is held in the chamber, possibly in contact with the bottom wall 2012 or the side wall 2011. The tank 201 may be an open tank structure or may have a closable tank structure. Thus, in examples where the tank 201 may be closed, the scrubber has a cover (not shown). The cover is capable of cooperating with the side walls 2011 of the tank 201 to close the tank cavity. In addition, the cover may be rotatably connected to the side wall 2011 of the tank 201, such as by a rotating shaft, or may be detachably (e.g., by a snap) connected to the side wall 2011 of the tank 201.
During cleaning, liquid (cleaning liquid) can be introduced from the bottom of the tank 201, and then the liquid can flow out from the opening at the top of the tank in an overflow manner. In this manner, by continuously introducing the cleaning solution, the silicon wafer in the tank 201 can be continuously contacted with the relatively cleaner cleaning solution during cleaning.
The liquid inlet joint is a member for injecting a cleaning liquid into the cavity of the tank 201. This may be accomplished by forming a through hole in the bottom wall 2012 of the tank 201 or by forming a through hole in the side wall 2011 near the bottom wall 2012. Further, in some examples, the liquid inlet joint may alternatively be implemented in a manner such as a metal joint that is attached (welded or screwed) to the tank 201. In such an arrangement, the conduit for providing the cleaning fluid may be connected to the metal fitting.
In addition, the arrangement and extension directions of the cleaning liquid conveying channels of the liquid inlet connector can be distributed along the direction criss-cross with the depth direction of the tank body. For example, the chambers of the tank 201 are vertically distributed, and the delivery channels of the liquid inlet connector are horizontally delivered. In this way, the cleaning liquid can be conveyed in a direction substantially parallel to the bottom of the tank 201, and at the same time, the liquid gradually accumulates in the tank chamber, and the water level gradually rises. As the water level increases, the cleaning fluid eventually overflows from the opening of the tank 201 (or, in some examples, an overflow joint may be provided in the sidewall 2011 or in the cover, and the cleaning fluid in the tank may be drained out of the tank through the overflow joint), thereby maintaining a continuous filling of the tank 201 with cleaning fluid and a continuous renewal.
The ultraviolet generating mechanism 202 is held by the tank 201, and is configured such that ultraviolet rays emitted therefrom are directed into the tank chamber. The ultraviolet generating mechanism 202 may be an optical system for guiding ultraviolet rays into the tank 201. That is, the ultraviolet ray may be an optical path system for guiding a path of the light, and does not generate the ultraviolet ray by itself.
Alternatively, in other examples, the ultraviolet light generating mechanism 202 may be a mechanism having a light source and an optical path guiding system. For example, the ultraviolet light generating mechanism 202 may include an ultraviolet light source and a fiber optic structure. Alternatively, the ultraviolet generating mechanism 202 may be an ultraviolet lamp having a linear structure. Which may be laid on the inner surface of bottom wall 2012 of tank 201 or the inner surface of side wall 2011. Alternatively, when the tank 201 is made of a transparent material, the ultraviolet lamp may be fixed to the outer arm of the tank Cao Caoti 201 or may be disposed outside the tank 201. Or the ultraviolet lamp may be suspended in the cavity of the tank 201. Alternatively, the ultraviolet generating mechanism 202 may be fixed to the cover.
The washer may further include a switch electrically connected to the ultraviolet generating means 202, based on the selection of the ultraviolet irradiation mode. The switch can be used to selectively switch on or off the connection of the ultraviolet generating mechanism 202 to the power source to activate the ultraviolet irradiation or to deactivate it as needed. In fig. 3, a row of ultraviolet lamps (6 groups, two groups) are installed at the bottom of the tank body, and when pure water enters the middle of the tank body from the bottom of the tank body, the pure water is irradiated by the ultraviolet lamps, so that organic matters in the pure water are effectively removed.
Alternatively, the washer may have a switch and frequency generation mechanism. The switch is electrically connected to the ultraviolet generating mechanism 202 through the frequency generating mechanism. In this way, the frequency generation mechanism can be used to generate an on-off signal having a set fixed frequency, so that the switch can be electrically connected to the ultraviolet generation mechanism 202 on or off at the fixed frequency. In other words, by the cooperation of the frequency generation mechanism and the switch, intermittent irradiation of ultraviolet irradiation at a set fixed frequency can be realized. For example, after 10 minutes of irradiation, irradiation is suspended for 2 minutes, irradiation is continued for another 10 minutes, and the steps are repeated. The frequency generation means may be a timer, for example.
Based on the above, the performance of the heterojunction solar cell can be optimized by implementing the above-mentioned organic matter removing operation by the above-mentioned device. In the mass production of the SHJ (silicon heterojunction), the conversion efficiency of the battery is improved, and the manufacturing cost of the battery can be reduced. For example, according to 0.03% conversion efficiency improvement measurement: the conversion efficiency of the SHJ battery is measured by 24% per watt of 1.2 yuan, so that the yield per GW can be increased by 1.2 yuan per year=1000000000 x 0.03%/24% =300 ten thousand yuan.
The embodiments of the present application are described in detail above in connection with the examples, but it will be understood by those skilled in the art that the above example examples are merely for illustrating the present application and should not be construed as limiting the scope of the present application. The specific conditions are not noted in the examples and are carried out according to conventional conditions or conditions recommended by the manufacturer. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
The present application is described in further detail below with reference to examples.
Example 1
The N-type monocrystalline silicon wafer is subjected to texturing by adopting a heterojunction conventional texturing process flow and a proportion in the following manner. The wool making process is as follows: pre-cleaning, water tank, damage removing, water tank, SC1, water tank, texturing, water tank, SC1, water tank, CP, water tank, HF tank, water tank and drying. Further, the steps of the water tank, the CP, the water tank, the HF tank and the water tank were all continuously performed with ultraviolet irradiation at 185nm.
Then, the silicon wafer after texturing is subjected to the following operations: and sequentially manufacturing amorphous silicon, TCO and screen printing electrodes, thereby obtaining the heterojunction solar cell.
The battery performance was tested.
Comparative example 1
This example was carried out according to the procedure of example 1 and differs from example 1 in that: in this example, ultraviolet irradiation was not performed.
The test performance of the batteries in example 1 and comparative example 1 is shown in table 1.
From table 1 above, it can be seen that the conversion efficiency of the battery is effectively improved by 0.03% after the ultraviolet lamp process is adopted, and the improvement of efficiency mainly derives from the improvement of Voc (Voc is improved by 0.8 mV).
Example 2
Texturing was performed in the same manner as in example 1, using an N-type monocrystalline silicon wafer, and following the procedure.
The silicon wafer is sequentially subjected to pre-cleaning, water tank, damage removing, water tank, SC1, water tank, texturing, water tank, SC1, water tank, CP, water tank, HF tank, water tank and drying. Further, in the final step of the water tank, the HF tank and the water tank, continuous ultraviolet irradiation at 185nm was performed.
Then, the silicon wafer after texturing is subjected to the following operations: and sequentially manufacturing amorphous silicon, TCO and screen printing electrodes, thereby obtaining the heterojunction solar cell.
The battery performance was tested.
Comparative example 2
This example was carried out according to the procedure of example 2 and differs from example 2 in that: in this example, ultraviolet irradiation was not performed.
The test performance of the batteries in example 2 and comparative example 2 is shown in table 2.
From table 2 above, it can be seen that the conversion efficiency of the cell is also effectively improved by 0.02% after the ultraviolet lamp process, and the efficiency improvement mainly derives from the Voc improvement (Voc improvement by 0.5 mV).
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims (10)
1. A method for improving the conversion efficiency of a heterojunction solar cell, wherein the heterojunction solar cell comprises a monocrystalline silicon layer and amorphous silicon layers respectively formed on two sides of the monocrystalline silicon layer, and the method is characterized in that the following organic matter removing operation by utilizing ultraviolet rays is carried out after texturing monocrystalline silicon wafers and before manufacturing the amorphous silicon layers when manufacturing the heterojunction solar cell:
and irradiating with ultraviolet rays to obtain a cleaning solution and/or a cleaning tank for cleaning the monocrystalline silicon wafer after texturing, wherein organic pollutants in the cleaning solution and/or the cleaning tank are decomposed through photochemical reaction to be removed or reduced.
2. The method of claim 1, wherein the removing organic matter is performed before the textured monocrystalline silicon piece enters the cleaning tank;
alternatively, the organic removal operation is performed before or during the entry of the cleaning liquid into the cleaning tank.
3. The method for improving the conversion efficiency of a heterojunction solar cell as claimed in claim 1 or 2, wherein said irradiation with ultraviolet rays is performed by continuous irradiation;
alternatively, the irradiation with ultraviolet rays is performed intermittently.
4. The method of improving the conversion efficiency of a heterojunction solar cell as claimed in claim 3, wherein said using ultraviolet irradiation is performed by intermittent irradiation at a fixed frequency.
5. The method of claim 1, wherein the ultraviolet light has a wavelength of 185nm.
6. The method of claim 1 or 5, wherein the de-organing operation increases minority carrier lifetime in the heterojunction solar cell.
7. A washer for implementing the method of improving the conversion efficiency of a heterojunction solar cell as claimed in any one of claims 1 to 6, characterized in that the washer comprises:
the groove body is provided with a bottom wall and a side wall and jointly encloses a groove cavity defined with the depth direction;
the liquid inlet connector is arranged on the bottom wall or the side wall and is close to the bottom wall, and is configured to provide cleaning liquid in the groove cavity along the direction crisscross with the depth direction;
an ultraviolet generating mechanism is held in the tank body and configured to emit ultraviolet rays toward the inside of the tank chamber.
8. The washer of claim 7, wherein the sump cavity is open; alternatively, the tank cavity is closed, and the cleaner further comprises a cover body which is matched with the side wall of the tank body to close the tank cavity.
9. The washer of claim 8, wherein said cover has an overflow joint for allowing the cleaning fluid in said sump cavity to flow out of said sump cavity;
or the cover body is detachably connected with the side wall;
alternatively, the ultraviolet generating mechanism is fixed to the cover.
10. A washer according to any one of claims 7 to 9, wherein said ultraviolet generating means is fixed to said bottom wall and/or said side wall;
alternatively, the washer further comprises a switch electrically connected to the ultraviolet generating mechanism for selectively switching on or off the connection of the ultraviolet generating mechanism to a power source;
or, the cleaner further comprises a switch and a frequency generation mechanism, wherein the switch is electrically connected with the ultraviolet generation mechanism through the frequency generation mechanism, and the frequency generation mechanism is used for generating an on-off signal with a set fixed frequency so as to enable the switch and the ultraviolet generation mechanism to be electrically connected with or disconnected from each other at the fixed frequency.
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