CN113624050A - Efficient high-reliability flat heat pipe - Google Patents
Efficient high-reliability flat heat pipe Download PDFInfo
- Publication number
- CN113624050A CN113624050A CN202110953124.1A CN202110953124A CN113624050A CN 113624050 A CN113624050 A CN 113624050A CN 202110953124 A CN202110953124 A CN 202110953124A CN 113624050 A CN113624050 A CN 113624050A
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- China
- Prior art keywords
- flat
- heat pipe
- silicon carbide
- reliability
- heat
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- 230000017525 heat dissipation Effects 0.000 claims abstract description 23
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 23
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 22
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 claims description 4
- 239000012153 distilled water Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 230000002195 synergetic effect Effects 0.000 abstract description 2
- 239000011797 cavity material Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 239000011257 shell material Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 graphite alkene Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
- F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
- F28D15/04—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure
- F28D15/046—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure characterised by the material or the construction of the capillary structure
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A high-efficiency and high-reliability flat heat pipe relates to the technical field of flat heat pipes. The structure of the graphene micro-porous structure comprises a silicon carbide closed flat shell with the characteristics of high heat conductivity coefficient and high Young modulus, a heat dissipation working medium and a graphene interconnection array with a micro-porous structure and vertically grown. The graphene interconnection array with the vertically grown microporous structure is arranged inside the silicon carbide flat shell. The structure combines the advantages of high heat uniformity of the flat heat pipe, high heat conduction in the graphene layer surface and the advantages of high hardness and low thermal expansion coefficient of silicon carbide, and the synergistic effect of the advantages ensures that the flat heat pipe not only has good heat uniformity and heat conduction performance, but also has the characteristic of extremely small deformation under the high-temperature working condition, and is particularly suitable for heat dissipation of various high-power electronic devices.
Description
Technical Field
The invention relates to a high-efficiency and high-reliability flat heat pipe, and belongs to the technical field of heat dissipation.
Technical Field
The high heat flux density generated inside the power electronic device poses a great threat to the reliability of the device. The failure due to high temperature accounts for more than 50% of all electronic equipment failures, and the heat transfer problem even becomes a bottleneck in the development of devices toward miniaturization. In addition to the requirement of the highest temperature, the electronic component also requires uniformity of temperature. With the rapid development of microelectronic technology, the miniaturization of electronic devices has become a mainstream trend in the development of modern electronic devices. The ever-decreasing feature sizes of electronic devices, the ever-increasing integration levels of chips, packaging densities, and operating frequencies have led to a rapid increase in the heat flux density of chips. Therefore, the heat dissipation problem of the circuit and the chip thereof is particularly outstanding. The flat heat pipe has high thermal conductivity and good temperature uniformity, and becomes one of promising technologies for solving the problem of electronic heat dissipation.
The common flat heat pipe has a thicker overall structure and a larger volume, and is difficult to adapt to the heat dissipation requirement of a micro electronic structure. Meanwhile, the existing common heat pipe basically adopts metal as a sealed cavity, and the metal cavity is inevitably deformed, protruded and the like in the large heat conduction process during working, so that the heat resistance in the heat conduction process is increased, and the performance of a device is reduced. In addition, the metal material and the material of the semiconductor device have large thermal mismatch, which easily causes the flat heat pipe to be separated from the heating device, and the heat conduction and heat dissipation performance of the flat heat pipe are greatly reduced.
Disclosure of Invention
The invention aims to avoid the defects in the prior art and provides the high-efficiency high-reliability flat heat pipe which has the advantages of good heat homogenizing effect, high heat conductivity, good structural thermal stability and compatibility with the conventional semiconductor process and is particularly suitable for heat dissipation of various high-power electronic devices.
The purpose of the invention is realized by the following technical scheme:
the utility model provides a high-efficient high reliability flat plate heat pipe, includes carborundum sealed flat plate casing, arranges in carborundum flat plate casing inside and with carborundum sealed flat plate casing upper and lower internal surface form the vertically grown graphite alkene interconnection array of micropore structure of hot contact, still is provided with the working medium that dispels the heat in carborundum sealed flat plate casing.
In the technical scheme, the flat plate shell is made of single crystal silicon carbide with high thermal conductivity coefficient of 120-.
In the technical scheme, the closed flat plate shell made of the single crystal silicon carbide is a hollow structure formed by bonding two mirror-symmetrical silicon carbide wafers with grooves.
In the technical scheme, the thickness of the silicon carbide closed flat shell is 0.5mm-1 mm.
In the above technical scheme, the vertically grown graphene is of a single-layer single crystal structure.
In the technical scheme, the vertically grown graphene is transversely connected with each other to form a honeycomb-shaped microstructure, and the capillary force and the siphon force are good.
In the technical scheme, the thickness of the graphene interconnection array is 100-500 um.
In the technical scheme, the heat dissipation working medium is any one or a mixture of distilled water, ethanol, methanol and glycol.
In the technical scheme, the volume filled by the heat dissipation working medium accounts for 5-30% of the volume of the cavity inside the silicon carbide flat plate shell.
Due to the adoption of the technical scheme, the invention has the following beneficial effects:
firstly, after the flat heat pipe is locally heated, the heat dissipation working medium filled in the flat heat pipe can quickly absorb a large amount of heat through the phase change process, and meanwhile, the heat is quickly and uniformly distributed along the in-plane direction of the flat heat pipe, so that the temperature of a local hot spot can be greatly reduced, and the structural collapse of a heating element caused by overhigh local temperature is avoided.
Secondly, the heat dissipation working medium filled in the heat dissipation device can absorb heat from a liquid state to be converted into a gaseous state after being heated, can transfer mass to the other side of the flat heat pipe under the action of pressure gradient while absorbing a large amount of heat, and is combined with the heat sink outside the flat heat pipe to realize rapid heat dissipation.
The graphene interconnection array vertically grown in the flat heat pipe has extremely high thermal conductivity in the vertical direction of the flat heat pipe, and the flat heat pipe can realize extremely high thermal conductivity in the normal direction of the flat heat pipe by combining phase change heat dissipation of a heat dissipation working medium.
The graphene interconnection array vertically grown in the flat heat pipe has a honeycomb-shaped microstructure and has good capillary force and siphon force, so that the flat heat pipe can absorb the liquefied heat dissipation working medium to be close to a heat source without additionally adding an internal capillary structure.
The flat heat pipe is a closed shell prepared from silicon carbide materials, has the characteristics of high heat conductivity coefficient, high Young modulus and low thermal expansion coefficient, does not deform or bulge in the high heat transmission process, can ensure that the flat heat pipe has a large temperature range for stable work, and is suitable for heat dissipation of high-power devices. In addition, the preparation of the silicon carbide material is compatible with the existing semiconductor device process, and is very suitable for heat dissipation of the semiconductor device.
Drawings
The invention is further illustrated by means of the attached drawings, but the embodiments in the drawings do not constitute any limitation to the invention, and other drawings can be derived by those skilled in the art without inventive effort from the following drawings.
FIG. 1 is a schematic structural diagram of a high-efficiency and high-reliability flat heat pipe according to the present invention.
FIG. 2 is an exploded view of a high-efficiency and high-reliability flat heat pipe according to the present invention.
FIG. 3 is a photograph of the top of a cellular vertically grown graphene microstructure array inside a high-efficiency high-reliability flat heat pipe.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
In order to facilitate an understanding of the invention, the invention will be further explained below with reference to the accompanying drawings. The accompanying drawings illustrate an exemplary embodiment of the present invention. The invention may, however, be embodied in many different forms and is not limited to the embodiments. Rather, this embodiment is shown for the purpose of illustrating the disclosure of the present invention in more detail.
As shown in fig. 1-3, the present embodiment shows a high-efficiency and high-reliability flat heat pipe, which includes a closed cavity (shown in fig. 1) made of silicon carbide material, and a honeycomb-shaped vertically-grown graphene microstructure array inside the closed cavity.
The closed cavity is a hollow structure formed by bonding two mirror-symmetric silicon carbide wafers with grooves (such as an upper cover and a lower cover shown in fig. 2), and the external dimensions are as follows: the length is 10mm, the width is 10mm, and the height is 1 mm; the internal hollow size is: the length is 8mm, the width is 8mm, and the height is 0.4 mm.
The hollow structure in the closed cavity is filled with a honeycomb-shaped vertically-grown graphene microstructure array, the honeycomb-shaped vertically-grown graphene microstructure array is directly grown in a groove (a lower cover) of a silicon carbide wafer with the groove by using a plasma chemical vapor deposition method to form good thermal contact, the growth time is controlled, and the height of the honeycomb-shaped vertically-grown graphene microstructure array is controlled to be 400 micrometers so as to form good thermal contact with the concave surface in the upper cover. Meanwhile, the vertically grown graphene sheets are connected together in the transverse direction, so that good thermal conductivity in the transverse direction is ensured.
The closed cavity is filled with distilled water, and the filling amount is 10% of the volume of the closed cavity.
The manufacturing process of the flat heat pipe is different from that of the conventional metal heat pipe because the selected cavity material belongs to a semiconductor silicon carbide material. The upper cover and the lower cover with the grooves are respectively prepared by a chemical etching method. The upper cover and the lower cover are connected into a whole by a bonding method.
After the integral flat heat pipe is formed, the heat pipe has no upper and lower parts, and the using effect has mirror symmetry.
The high-efficiency high-reliability flat heat pipe shown in the embodiment has extremely high longitudinal thermal conductivity under the synergistic effect of the heat dissipation working medium and the graphene. The heat generated by the heating element in thermal contact with the graphene in the transverse direction is quickly homogenized by the flat heat pipe due to the interconnection effect of the graphene, and is transferred to the other side by utilizing the extremely high longitudinal heat conductivity of the flat heat pipe, and the other side of the flat heat pipe is generally connected with a heat sink, so that the heat transferred to the side is taken away by the heat sink, and the purpose of cooling the heating element is achieved.
Meanwhile, the flat heat pipe shell material shown in the embodiment is a silicon carbide material with a high young modulus, so that the flat heat pipe shell material can ensure that the flat heat pipe shell material cannot deform or dent due to high pressure generated after the internal heat dissipation working medium is transformed into a gaseous state through phase change, and the characteristic can ensure that the flat heat pipe is in good thermal contact with a heating element when in use, thereby ensuring high reliability.
Claims (9)
1. The utility model provides a dull and stereotyped heat pipe of high-efficient high reliability which characterized in that: the graphene interconnection array is arranged in the silicon carbide flat shell and vertically grows in a microporous structure in thermal contact with the upper inner surface and the lower inner surface of the silicon carbide closed flat shell, and a heat dissipation working medium is further arranged in the silicon carbide closed flat shell.
2. The flat heat pipe as claimed in claim 1, wherein the flat housing has a thermal conductivity of 120--6℃-1The point single crystal silicon carbide is formed into a closed flat shell.
3. A high-efficiency high-reliability flat heat pipe according to claim 2, wherein the closed flat shell made of single crystal silicon carbide is a hollow structure formed by bonding two mirror-symmetric silicon carbide wafers with grooves.
4. A high efficiency and high reliability flat heat pipe according to claim 2 wherein the silicon carbide closed flat shell has a thickness of 0.5mm to 1 mm.
5. A high-efficiency high-reliability flat-plate heat pipe according to claim 1, wherein the vertically grown graphene has a single-layer single crystal structure.
6. A high-efficiency high-reliability flat heat pipe according to claim 1, wherein the vertically grown graphene is connected with each other in the transverse direction to form a honeycomb-shaped microstructure, and has good capillary force and siphon force.
7. A high efficiency high reliability flat plate heat pipe according to claim 1 wherein the thickness of the graphene interconnection array is 100um-500 um.
8. A high-efficiency high-reliability flat heat pipe according to claim 1, wherein the heat-dissipating working medium is any one or a mixture of distilled water, ethanol, methanol and glycol.
9. A high-efficiency high-reliability flat heat pipe according to claim 8, characterized in that the volume of the filled heat dissipation working medium is 5-30% of the volume of the cavity inside the silicon carbide flat shell.
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CN202110953124.1A CN113624050B (en) | 2021-08-18 | 2021-08-18 | High-efficiency high-reliability flat heat pipe |
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CN202110953124.1A CN113624050B (en) | 2021-08-18 | 2021-08-18 | High-efficiency high-reliability flat heat pipe |
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CN113624050B CN113624050B (en) | 2024-04-26 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114657636A (en) * | 2022-04-06 | 2022-06-24 | 中国原子能科学研究院 | Metal organic chemical vapor deposition equipment |
WO2024092617A1 (en) * | 2022-11-03 | 2024-05-10 | Nokia Shanghai Bell Co., Ltd. | Heat exchange apparatus and manufacturing method thereof |
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US20170182474A1 (en) * | 2015-12-28 | 2017-06-29 | Aruna Zhamu | Integral 3D graphene-carbon hybrid foam and devices containing same |
CN111426226A (en) * | 2020-04-21 | 2020-07-17 | 福建永安市永清石墨烯研究院有限公司 | Graphene heat pipe and preparation method thereof |
CN111473671A (en) * | 2020-04-21 | 2020-07-31 | 福建永安市永清石墨烯研究院有限公司 | Graphene VC soaking plate and preparation method thereof |
US20200340756A1 (en) * | 2019-04-26 | 2020-10-29 | Nanotek Instruments, Inc. | Graphene-enhanced vapor-based heat transfer device |
US20200413565A1 (en) * | 2019-06-28 | 2020-12-31 | Ctron Advanced Material Co., Ltd. | Heat conducting structure, manufacturing method thereof, and mobile device |
-
2021
- 2021-08-18 CN CN202110953124.1A patent/CN113624050B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20170182474A1 (en) * | 2015-12-28 | 2017-06-29 | Aruna Zhamu | Integral 3D graphene-carbon hybrid foam and devices containing same |
US20200340756A1 (en) * | 2019-04-26 | 2020-10-29 | Nanotek Instruments, Inc. | Graphene-enhanced vapor-based heat transfer device |
US20200413565A1 (en) * | 2019-06-28 | 2020-12-31 | Ctron Advanced Material Co., Ltd. | Heat conducting structure, manufacturing method thereof, and mobile device |
CN111426226A (en) * | 2020-04-21 | 2020-07-17 | 福建永安市永清石墨烯研究院有限公司 | Graphene heat pipe and preparation method thereof |
CN111473671A (en) * | 2020-04-21 | 2020-07-31 | 福建永安市永清石墨烯研究院有限公司 | Graphene VC soaking plate and preparation method thereof |
Non-Patent Citations (1)
Title |
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SHICHEN XU, ADVANCED FUNCTIONAL MATERIALS * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114657636A (en) * | 2022-04-06 | 2022-06-24 | 中国原子能科学研究院 | Metal organic chemical vapor deposition equipment |
WO2024092617A1 (en) * | 2022-11-03 | 2024-05-10 | Nokia Shanghai Bell Co., Ltd. | Heat exchange apparatus and manufacturing method thereof |
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