CN1136221A - 半导体器件压触管壳 - Google Patents

半导体器件压触管壳 Download PDF

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CN1136221A
CN1136221A CN96101286A CN96101286A CN1136221A CN 1136221 A CN1136221 A CN 1136221A CN 96101286 A CN96101286 A CN 96101286A CN 96101286 A CN96101286 A CN 96101286A CN 1136221 A CN1136221 A CN 1136221A
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CN1073286C (zh
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F·波尔吉安尼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
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    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Thyristors (AREA)

Abstract

在一个半导体器件压触管壳中，控制极接触环4具有许多螺旋状空隙5。这些空隙可以消除在装配管壳时所产生的轴向移动而不致对材料施加负荷。因而在控制极与控制极接触环之间可获得一种良好的而又耐用的电接触。

Description

半导体器件压触管壳
本发明涉及功率电子器件领域，以半导体器件压触管壳为出发点。
在欧洲专利申请文献EP-A1-0 588 026中已叙述过一种这样的压触管壳。此文献中公开了一种可关断大功率半导体器件，尤其是一种GTO类型器件，该器件具有片状半导体衬底，该衬底安装在一个环状绝缘管壳中央，介于一个耐压力的片状阴极接触和一个同样耐压力的片状阳极接触之间，并且在阴极接触的外侧与一个形状为控制极接触环的门电极相接触。其中阴极接触经第一个盖与绝缘管壳的一端连接，而阳极接触经第二个盖与绝缘管壳的另一端连接。从而构成一个对外密封的器件，其中，门接触经一向外引出的门极引线可接通门电流。一种具有低连接电感的结构是这样实现的，即采用旋转对称的门极引线，此引线与阴极接触是同心安装的，而且门极引线与阴极接触用一个唯一的绝缘体实现电绝缘。
控制极接触环受压力实现接触时将沿轴向稍稍移动。如果此功率半导体器件是在实施结构中使用，那么就必定反复安装和卸下。因此引起的控制极接触环的移动能使门电极的电接触变坏或者由于材料疲劳而完全断开。
因此，本发明的目的是提出一种压触管壳，此种管壳保证实现与控制电极有耐用的、稳定的电接触。
所以本发明的核心是控制极接触环具有若干螺旋状空隙。这样，在安装功率半导体器件时所引起的轴向移动就可以借助螺旋状空隙的弯曲和由此导致的环内侧小的扭转加以消除。
在一个优选实施例中，螺旋状空隙用圆的渐伸线组成。就是说空隙的边缘沿圆的渐伸线延伸。为获得较简单的结构，可以用圆弧来近似渐伸线。
此外，提出了一种安装在本发明管壳中的功率半导体器件。
本发明结构的优点在于，在安装管壳时控制极接触环的轴向负荷由螺旋状空隙消除而不产生对材料的明显负荷。由于这种原因可以获得对控制电极的长期电接触。
下面借助实施例并结合附图进一步阐述本发明。
这些附图是：
图1本发明的一种控制极接触环俯视图；
图2本发明的一种管壳的侧截面图。
原则上在附图中相同的部分用相同的符号表示。
图2示出本发明一种压触管壳1的截面图。其结构基本上与专利EP-A1-0 588 026的结构相近。此处特别强调参阅该专利，并且在此对压触管壳结构的叙述仅涉及本发明所必须的部分。
图2表示半导体器件。该器件具有一个阳极和一个阴极。在图2中阳极在上方并且与相应的上部一个接触支柱3接触。阴极位于图2中的下方并且与下部一个接触支柱3接触。为了改善热接触，在接触支柱3与半导体器件2之间上下各安装一个钼片6。半导体器件上的控制电极用安放在弹簧7上的旋转对称控制极引线8接触，并经一个控制极接触环4向外引出。所有这些集成在一个绝缘管壳9内。
对于本发明特别有意义的主要是控制极接触环4。在把半导体器件2装入管壳1时接触支柱3受到压力，控制极接触环4就一起沿轴向有小的移动。此外，如从图2中可以清楚地看到，该环在某一部分被弯曲。为了得到尽可能持久的电接触，根据本发明控制极接触环4制成如图1所示结构。
在弯曲的区域内设置了螺旋状空隙5。这些空隙的优点是在装配时控制极接触环4可以毫无问题地消除轴向移动。此时，螺旋状空隙5被弯曲而且环的内侧同时有一小的转动。空隙5的边缘优先沿着圆的渐伸线延伸。为了简化制造工艺、例如对于数控机械也可以用圆弧来近似这种渐伸线。
此外，为了安装固定螺钉，可以在控制极接触环上打若干孔。
因为环状空隙5可以消除在装配管壳时形成的移动，所以控制极接触环只经受微小的材料负荷。因此，不会出现材料疲劳现象，这种材料疲劳现象能够由于断裂而导致电接触变坏甚至断开。

Claims (4)

1.用于半导体器件(2)的压触管壳(1)，该器件具有一个第一、一个第二主电极和一个控制电极，其中第一和第二主电极安装在两个接触支柱(3)之间，并且受到这些支柱的压力和其中控制极与一个引向管壳外的控制极接触环(4)连接，其特征在于，控制极接触环(4)具有若干螺旋状空隙(5)。
2.根据权利要求1所述的管壳，其特征在于，空隙(5)的边缘沿着一个圆的渐伸线延伸。
3.根据权利要求2所述的管壳，其特征在于，空隙边缘的渐伸线适于用圆弧近似。
4.功率半导体器件，其特征在于，该器件包括一种根据权利要求1至3之一所述的管壳。
CN96101286A 1995-02-17 1996-02-16 用于半导体器件的压触管壳 Expired - Fee Related CN1073286C (zh)

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DE19505387A DE19505387A1 (de) 1995-02-17 1995-02-17 Druckkontaktgehäuse für Halbleiterbauelemente
DE19505387.7 1995-02-17

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EP (1) EP0729179B1 (zh)
JP (1) JPH08241956A (zh)
KR (1) KR960032691A (zh)
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DE (2) DE19505387A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105210186A (zh) * 2013-05-13 2015-12-30 Abb技术有限公司 半导体开关器件的间隔器***

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JP3480901B2 (ja) * 1998-06-18 2003-12-22 株式会社東芝 圧接形半導体素子および電力変換装置
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EP1030355B1 (en) 1998-09-10 2007-12-19 Mitsubishi Denki Kabushiki Kaisha Press contact semiconductor device
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JP5338980B2 (ja) * 2011-09-13 2013-11-13 トヨタ自動車株式会社 半導体モジュール

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105210186A (zh) * 2013-05-13 2015-12-30 Abb技术有限公司 半导体开关器件的间隔器***
CN105210186B (zh) * 2013-05-13 2018-01-12 Abb 技术有限公司 半导体开关器件的间隔器***

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DE19505387A1 (de) 1996-08-22
EP0729179B1 (de) 2000-07-05
US5739556A (en) 1998-04-14
JPH08241956A (ja) 1996-09-17
KR960032691A (ko) 1996-09-17
DE59605529D1 (de) 2000-08-10
EP0729179A1 (de) 1996-08-28
CN1073286C (zh) 2001-10-17

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