CN113591320B - Coupling simulation method for hot carrier effect and total dose effect - Google Patents
Coupling simulation method for hot carrier effect and total dose effect Download PDFInfo
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Abstract
The invention discloses a coupling simulation method of hot carrier effect and total dose effect, which mainly solves the problem that the prior art can not accurately obtain the change of the electrical characteristics of an NMOS field effect tube along with time, and the realization scheme is as follows: modeling by utilizing Sentaurus software of a TCAD tool to obtain an NMOS device structure; simulating the density of gate oxide charges and interface state trap charges extracted from the device by using the applied hot carrier stress to obtain the electrical characteristics of the device under the hot carrier stress; and then activating a Radiation model to perform coupling simulation of the total dose effect and the hot carrier effect to obtain the degradation characteristic of the device under the coupling stress. Compared with the prior art, the method for reinforcing fixed charges can reflect the influence of the total dose effect on the hot carrier effect more accurately, and can be used for obtaining the electrical characteristics of the NMOS field effect transistor.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a coupling simulation method for a hot carrier effect and a total dose effect, which can be used for obtaining the electrical characteristics of an NMOS field effect transistor.
Background
SOI technology on silicon is an emerging research hotspot in the field of integrated circuits since the end of the last century and, with the rapid development and gradual maturation of the applications of SOI technology, SOI devices are widely used in aerospace technology because of their advantages.
Compared with a bulk silicon device, the SOI device eliminates the latch-up effect, reduces the soft error rate, parasitic capacitance and leakage current, and is simpler in device isolation process and more convenient in shallow junction manufacturing. However, as the device size is continuously reduced, the SOI device also suffers from hot carrier effect damage, and because of the existence of the buried oxide layer, the research on the hot carrier damage is more complicated than that of the corresponding bulk silicon device, and the devices and devices which operate in space for a long time are also affected by the total dose of the space radiation effect, so that the service life of the device is reduced. For the research of the hot carrier effect and the total dose effect, both the simulation experiment of the device reliability and the space effect at home and abroad adopts a single-mechanism ground simulation mode. In the past, simulation based on the HCI effect is simulated by adding fixed charges in an oxide layer and adding trapped charges at an interface, but as bias voltage applied to a real device in a hot carrier experiment and the concentration of generated charges are gradually changed along with the increase of stress time, the reinforced fixed charges and the trapped charges cannot simulate the hot carrier effect under different stress bias voltages, and great uncertainty is generated. Therefore, research of a novel HCI simulation method based on TCAD is very necessary, and meanwhile, under the actual space radiation environment, the ionizing radiation effect of the device is very complicated. Since the TID effect and the HCI effect are cumulative effects in an actual irradiation environment, catastrophic damage to a circuit or a device is generally avoided, and the TID effect and the HCI effect mainly affect basic electrical characteristics of the device and cause the basic electrical characteristics to be degraded, which often takes a long time (tens of thousands of seconds). In space application, an NMOS field effect transistor is simultaneously influenced by a total dose effect and a self hot carrier effect, the influence of the total dose on the device is mainly to generate oxide trap charges and interface states in an STI region, and the positively charged oxide trap charges are key factors causing device leakage and threshold voltage drift. Meanwhile, the HCI effect is also the degradation of electrical parameters due to the increase of the channel electric field, and more importantly, the oxide trap charges and the interface states generated by the ionizing radiation have direct influence on the channel electric field and the hot carrier mobility of the device. The existing TID effect can cause the electrical characteristics of the device to be more degraded under the influence of the self HCI effect, namely the TID effect can aggravate the HCI effect, so that the HCI and TID coupling effect is substantially the influence of TID on the HCI effect. Due to the limitation of experimental environment, most of the coupling research can only be realized by simulation of TCAD.
The existing TCAD simulation method is to add fixed charges into a gate oxide layer of a device to simulate the damage of HCI effect and TID effect to the device, but the method cannot reflect the change relationship of trap charge concentration of the device along with time under different bias voltages, different stress time, different irradiation dose rates and different irradiation dose rates, and cannot accurately obtain the electrical characteristics of the device.
Disclosure of Invention
The invention aims to solve the defects of the prior art, and provides a hot carrier effect and total dose effect coupling simulation method, so that the change relation of the trap charge concentration of a device along with time is obtained under different bias voltages, different stress times, different irradiation dose rates and different irradiation doses, and the degradation of the electrical characteristics of the device is accurately obtained.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
1. a method for simulating the coupling of hot carrier effect and total dose effect includes:
carrying out three-dimensional structure modeling on an NMOS field effect transistor based on an SOI (silicon on insulator) process by utilizing Sentaurus software in a process and device simulation tool TCAD to obtain a three-dimensional device structure model for hot carrier effect research;
extracting the change relation between the trap charge concentration and the interface state concentration of the three-dimensional device structure along with time in a calculation model of Sentaurus software, and performing polynomial fitting on the change relation to obtain a fitted function model;
thirdly, the fitted function model is led into a calculation model of Sentaurus software to obtain a calculation model for simulating the hot carrier effect, the interface state of the three-dimensional device structure is added with positive polarity, trapped charges are added with negative polarity, then the hot carrier effect is simulated to obtain the electrical characteristic A of the hot carrier effect, and the electrical characteristic A is stored in the carrier effect simulation calculation model;
fourthly, adding an irradiation Radiation model into the hot carrier effect calculation model, setting irradiation time and irradiation dose, and performing coupling simulation on the hot carrier effect and the total dose effect to obtain coupling electrical characteristics B of the hot carrier effect and the total dose effect;
fifthly, comparing the electrical characteristic A of the hot carrier effect with the coupling electrical characteristic B of the hot carrier effect and the total dose effect to obtain whether the total dose effect aggravates the hot carrier effect degradation of the NMOS field effect:
if A is larger than B, the total dose effect aggravates the degradation of the hot carrier effect of the NMOS field effect transistor;
if A < B, the total dose effect does not aggravate the degradation of the hot carrier effect of the NMOS field effect transistor.
The invention has the following advantages:
the method adopts an imported dynamic interface state and trap charge concentration function model to simulate the hot carrier effect, so that the simulation result is more accurate;
the simulation of the total dose effect is more accurate compared with a method for reinforcing fixed charges due to the fact that the Radiation model after activation is adopted to simulate the total dose effect;
according to the invention, as the dynamic interface state and trap charge concentration function model and the irradiation Radiation model are simultaneously introduced into the software Sentaurus calculation model, the coupling simulation results of the hot carrier effect and the total dose effect are more perfect and accurate.
Drawings
FIG. 1 is a diagram showing the structure of the software Sentaurus used in the simulation of the present invention;
FIG. 2 is a flow chart of the overall implementation of the present invention;
FIG. 3 is a schematic diagram of a three-dimensional structure of an NMOS field effect transistor based on an SOI process according to the present invention, which is modeled by using Sentaurus software;
FIG. 4 is a sub-flow diagram of a novel simulation of the hot carrier effect of FIG. 3 in accordance with the present invention;
FIG. 5 is a graph of the results of the fitting of the present invention to the interface states and trap concentrations of the NMOS field effect transistor of FIG. 4;
FIG. 6 is a graph showing simulation results of the present invention for hot carrier effect of the NMOS field effect transistor of FIG. 4;
FIG. 7 is a sub-flow diagram of the hot carrier effect and total dose effect coupling simulation of FIG. 3 according to the present invention;
fig. 8 is a graph showing the comparison result of the hot carrier effect and total dose effect coupling simulation of the NMOS field effect transistor in fig. 3 according to the present invention.
Detailed Description
The invention is described in detail below with reference to the attached drawing
Referring to fig. 1, Sentaurus software used for simulation in the present invention mainly includes four tools: the device comprises SDE, Sdevice, Sentaurus Visual and aspect, wherein the SDE is used for constructing a device structure and setting doping information and grid information; sdevice is used for calculating grids and solving a semiconductor equation and comprises six parts, namely a File-definition input File and an output File, a Physics-definition simulation adopted physical model, Plot-storage of solved variable information, numerical calculation in Math-control simulation, Electrode-definition device structure Electrode, bias state setting and solution-solving Poisson equation; the Sentaurus Visual is used for viewing the structure and physical parameters of the simulated device; inspects were used to view the electrical properties of the devices after simulation.
Referring to fig. 2, the implementation steps of the present invention include the following:
SDE is used in Sentaurus software for constructing an NMOS field effect tube structure, setting doping information and grid information, and simulating an NMOS field effect tube model, wherein the structure of the NMOS field effect tube model comprises a substrate, a buried oxide layer and a body region from bottom to top, a source region, a channel and a drain region are respectively arranged above the body region, a grid electrode is arranged above the channel as shown in figure 3, wherein figure 3(a) is a three-dimensional device structure diagram, and figure 3(b) is a three-dimensional device structure grid distribution diagram.
And 2, simulating the hot carrier effect of the NMOS field effect transistor to obtain the electrical characteristic A of the hot carrier effect.
Referring to FIG. 4, this step is embodied as follows
2.1) adding the stress setting of the NMOS field effect tube into a calculation model of the Sentaurus software:
the temperature is 300K, and the grid voltage V gs Is 1.5V, the drain voltage V Ds Respectively taking 2.8V, 2.9V and 3V, and setting time nodes as 1s, 100s, 300s, 500s, 1000s, 3000s, 5000s and 10000 s.
2.2) calculating and extracting the change relation of the trap charge concentration of the three-dimensional device structure along with time as shown in FIG. 5(a) and the change relation of the interface state concentration along with time as shown in FIG. 5(b), and performing polynomial fitting on the two change relations to obtain a fitted function model general formula as follows:
Ax 6 +Bx 5 +Cx 4 +Dx 3 +Ex 2 +Fx+H
wherein A, B, C, D, E, F is a coefficient corresponding to each term in a polynomial fitted from a curve, H is an ordinate value of an intersection of the curve and the Y axis, and x is a logarithmic form log of time t 10 t；
2.3) applying the NMOS field effect transistor grid voltage V gs Take 1.5V, the drain voltage V Ds The time-dependent function of the trapped charges of the NMOS field effect transistor and the time-dependent function of the interface state are obtained by substituting 2.5V, 2.6V, 2.7V, 2.8V, 2.9V and 3V into the function model, as shown in FIG. 5(c), wherein t is time, and t1, t2, t3, t4, t5 and t6 respectively represent log 10 t、log 10 t 2 、log 10 t 3 、log 10 t 4 、log 10 t 5 And log 10 t 6 N5, n51, n4, n41, n3, n31, n2, n21, n1, n11, n0 and n01 respectively represent the drain voltage V of the NMOS field effect transistor Ds The method comprises the steps of respectively taking functions of time-varying trap charge concentration and time-varying interface state of the three-dimensional device structure, applying positive polarity to the interface state of the three-dimensional device structure, applying negative polarity to the trap charge, and performing hot carrier effect simulation to obtain the electrical characteristics A of the hot carrier effect, wherein the transfer characteristic curve of the NMOS field effect transistor is shown in figure 6(a), and the threshold voltage curve corresponding to different stress time nodes is shown in figure 6(b), the maximum transconductance curve is shown in figure 6(c), and the saturated drain current curve is shown in figure 6(d) are extracted from time nodes 1s, 100s, 300s, 500s, 1000s, 3000s, 5000s and 10000s of the transfer characteristic curve of the NMOS field effect transistor.
As can be seen from fig. 6, the electrical characteristic degradation degree of the NMOS fet gradually increases with the increase of the stress time, which is a dynamic result and is more practical. However, the electrical characteristics of the obtained NMOS field effect transistor, such as the threshold voltage, are a single value, and the degradation trend of the electrical characteristics cannot be accurately obtained, which is a major difference from the actual situation.
And 3, performing coupling simulation of hot carrier effect and total dose effect on the NMOS field effect transistor to obtain coupling electrical characteristics B of the NMOS field effect transistor.
Referring to FIG. 7, this step is embodied as follows
3.1) stress coupling hot carrier effect to total dose effect is set as:
total dose effect dose rate of 200rad (SiO) 2 ) The irradiation times were 500s, 1000s, 1500s and 2000s, respectively, i.e. corresponding to a total dose of 100krad (SiO) 2 )/s、200krad(SiO 2 )/s、300krad(SiO 2 ) S and 400krad (SiO) 2 ) And s. The hot carrier effect stress voltage is: gate voltage V gs Is 1.5V, the drain voltage V Ds 2.8V, 2.9V and 3V are respectively taken, and the time nodes are 1s, 100s, 300s, 500s, 1000s, 3000s, 5000s and 10000 s.
3.2) adding an irradiation Radiation model into the hot carrier effect calculation model, setting irradiation time and irradiation dose, and performing coupling simulation of the hot carrier effect and the total dose effect to obtain coupling electrical characteristics B of the hot carrier effect and the total dose effect, wherein fig. 8(a) is a transfer characteristic curve with the same total dose and different hot carrier effect stress times, fig. 8(B) is a transfer characteristic curve with the same hot carrier stress and different total doses, and threshold voltages corresponding to different stress time nodes, such as fig. 8(c), are extracted from time nodes 1s, 100s, 300s, 500s, 1000s, 3000s, 5000s and 10000s in fig. 8 (a).
And 4, comparing the hot carrier effect electrical characteristic A and the hot carrier effect with the total dose effect coupling electrical characteristic B to obtain a result whether the total dose effect aggravates the hot carrier effect degradation of the NMOS field effect transistor.
The comparison of the hot carrier effect electrical characteristic a with the hot carrier effect and total dose effect coupling electrical characteristic B includes the comparison of three curves of threshold voltage, maximum transconductance and saturation leakage current for both, and this example employs, but is not limited to, the hot carrier effect threshold voltage curve, such as fig. 6(B), and the hot carrier effect and total dose effect coupling threshold voltage curve, such as fig. 8(c), which are implemented as follows:
comparing the obtained hot carrier effect threshold voltage curve 6(b) with the hot carrier effect and total dose effect coupling threshold voltage curve 8(c), obtaining the result whether the total dose effect aggravates the hot carrier effect degradation of the NMOS field effect transistor:
if the threshold voltage curve in fig. 6(b) is located below the threshold voltage curve in fig. 8(c), the total dose effect aggravates the degradation of the hot carrier effect of the NMOS field effect transistor;
if the threshold voltage curve in fig. 6(b) is above the threshold voltage curve in fig. 8(c), the degradation of the hot carrier effect of the NMOS field effect is not exacerbated by the total dose effect.
Putting the threshold voltage curve of fig. 6(b) and the threshold voltage curve of fig. 8(c) in the same coordinate as fig. 8(d), it can be seen that for each point of the abscissa, the threshold voltage of fig. 6(b) is always below the threshold voltage of fig. 8(c), and therefore it can be concluded that: the total dose effect aggravates the degradation of the hot carrier effect of the NMOS field effect transistor.
Claims (5)
1. A method for simulating the coupling of hot carrier effect and total dose effect includes:
carrying out three-dimensional structure modeling on an NMOS field effect transistor based on an SOI (silicon on insulator) process by utilizing Sentaurus software in a process and device simulation tool TCAD to obtain a three-dimensional device structure model for hot carrier effect research;
extracting the change relation between the trap charge concentration and the interface state concentration of the three-dimensional device structure along with time in a calculation model of Sentaurus software, and performing polynomial fitting on the change relation to obtain a fitted function model;
thirdly, the fitted function model is led into a calculation model of Sentaurus software to obtain a calculation model for simulating the hot carrier effect, the interface state of the three-dimensional device structure is added with positive polarity, trapped charges are added with negative polarity, then the hot carrier effect is simulated to obtain the electrical characteristic A of the hot carrier effect, and the electrical characteristic A is stored in the carrier effect simulation calculation model;
fourthly, adding an irradiation Radiation model into the hot carrier effect calculation model, setting irradiation time and irradiation dose, and performing coupling simulation on the hot carrier effect and the total dose effect to obtain coupling electrical characteristics B of the hot carrier effect and the total dose effect;
comparing the electrical characteristic A of the obtained hot carrier effect with the coupling electrical characteristic B of the hot carrier effect and the total dose effect to obtain the result of whether the total dose effect aggravates the degradation of the hot carrier effect of the NMOS field effect transistor:
if A is larger than B, the total dose effect aggravates the degradation of the hot carrier effect of the NMOS field effect transistor;
if A < B, the total dose effect does not aggravate the degradation of the hot carrier effect of the NMOS field effect transistor.
2. The method of claim 1, wherein the step (2) of extracting the change relationship between the trap charge concentration and the interface state concentration of the three-dimensional device structure with time from the calculation model of the Sentaurus software is to add a trap charge concentration attenuation model, an ionization collision model, a carrier-carrier scattering model, a lucky hot carrier model and a stress voltage into the calculation model of the Sentaurus software, and then perform simulation to obtain a curve of the change relationship between the trap charge concentration and the interface state concentration of the NMOS field-effect transistor with time.
3. The method of claim 1, wherein in (2), a polynomial fitting is performed on the change relationship of the trap charge concentration and the interface state concentration of the three-dimensional device structure with time, and the obtained fitting function is represented as follows:
Ax 6 +Bx 5 +Cx 4 +Dx 3 +Ex 2 +Fx+H
wherein A, B, C, D, E and F are polynomial coefficients fitted from a curve, H is the ordinate value of the intersection of the curve with the Y axis, and x is the logarithmic form log of time t 10 t。
4. The method according to claim 1, wherein (3) obtaining the electrical characteristic A of the hot carrier effect is to perform parameter extraction on a transfer characteristic curve of the NMOS field effect transistor obtained by simulating the hot carrier effect in a software Sentaurus to obtain a threshold voltage, a maximum transconductance and a saturated drain current of the NMOS field effect transistor.
5. The method according to claim 1, wherein (4) obtaining the coupling electrical characteristics B of the hot carrier effect and the total dose effect is to perform parameter extraction on transfer characteristic curves of the NMOS field effect transistor obtained by the hot carrier effect and total dose effect coupling simulation in software Sentaurus to obtain the threshold voltage, the maximum transconductance and the saturated drain current of the NMOS field effect transistor.
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