CN113589233A - S-band high-power double-balanced vector modulator based on PIN diode and control method thereof - Google Patents

S-band high-power double-balanced vector modulator based on PIN diode and control method thereof Download PDF

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CN113589233A
CN113589233A CN202110823211.5A CN202110823211A CN113589233A CN 113589233 A CN113589233 A CN 113589233A CN 202110823211 A CN202110823211 A CN 202110823211A CN 113589233 A CN113589233 A CN 113589233A
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coupler
port
input
signals
sub
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张宇
陈鹏
李东松
余旭涛
田玲
张雷
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Southeast University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00

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  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Digital Transmission Methods That Use Modulated Carrier Waves (AREA)

Abstract

The invention discloses an S-band high-power double-balanced vector modulator based on a PIN diode, which comprises: the device comprises an input coupler, a modulation module and a power combiner; the input coupler receives an input signal, generates two paths of orthogonal signals and outputs the signals through two output ports of the input coupler; the modulation module comprises two sub-modulation modules with symmetrical structures, the two sub-modulation modules are respectively connected with two output ports of the input coupler and receive signals transmitted by the input coupler, then the amplitude and the phase of the received signals are modulated, and finally the processed signals are transmitted to the power synthesizer; the power synthesizer is connected with the two sub-modulation modules and receives and synthesizes signals after modulation processing; the invention adopts a double-balance design structure, which is beneficial to eliminating parasitic parameters of the PIN diode.

Description

S-band high-power double-balanced vector modulator based on PIN diode and control method thereof
Technical Field
The invention relates to the technical field of radio frequency circuits, in particular to an S-band high-power double-balanced vector modulator based on a PIN diode and a control method thereof.
Background
In a system such as a conventional phased array radar, a phase shifter and an attenuator are usually cascaded to modulate the amplitude and phase of a signal, but the modulation method has two disadvantages:
1. the phase shifter and the attenuator are usually large in size, which is not beneficial to the miniaturization and integration of the system;
2. the modulation precision of the phase shifter and attenuator cascade mode can not meet the requirements of the modern phased array radar system.
The vector modulator can well solve the two problems, can simultaneously modulate the amplitude and the phase of a signal, can realize higher amplitude-phase modulation precision, and has the advantages of low cost, easy integration and the like. The microstrip circuit is a traditional transmission line structure in the microwave field, and has the characteristic of a planar structure, so that the microstrip circuit is widely applied to microwave and millimeter wave circuits. Due to the differentiation of circuit functions and the need for convenient migration and testing, microstrip circuits can be divided into different functional modules and individually designed and tested. When a complete circuit needs to be further built, the microstrip circuit usually needs to be connected by using a joint, and a double-balanced design structure is adopted to help eliminate parasitic parameters of the PIN diode.
Disclosure of Invention
In view of this, the present invention provides an S-band high-power double-balanced vector modulator based on a PIN diode and a control method thereof, so as to solve the problem that the conventional phased array radar system modulates the amplitude and phase of a signal in a manner of cascading a phase shifter and an attenuator, and the modulation system has a large volume, is not beneficial to system miniaturization and integration, and is high in cost. The 3dB directional coupler and the power synthesizer in the invention are designed by adopting microstrip line structures. The whole double-balance design structure is adopted, and parasitic parameters of the PIN diode can be eliminated.
In order to achieve the purpose, the invention adopts the following technical scheme:
a PIN diode based S-band high power double balanced vector modulator comprising: the device comprises an input coupler, a modulation module and a power combiner;
the input coupler receives an input signal, generates two paths of orthogonal signals and outputs the two paths of orthogonal signals through two output ports of the input coupler;
the modulation module comprises two sub-modulation modules with symmetrical structures, the two sub-modulation modules are respectively connected with two output ports of the input coupler and receive signals transmitted by the two sub-modulation modules, then the amplitude and the phase of the received signals are modulated, and finally the processed signals are transmitted to the power synthesizer;
the power synthesizer is connected with the two sub-modulation modules and receives and synthesizes signals after modulation processing;
the sub-modulation module comprises a first coupler, a second coupler, a third coupler, and a fourth coupler, wherein,
an input port of the first coupler is connected with an output port of one of the input couplers, an isolation port of the first coupler is grounded, a coupling port of the first coupler is connected with an input port of the second coupler, and a through port of the first coupler is connected with an input port of the fourth coupler;
the through port and the coupling port of the second coupler are both connected with PIN diodes, the positive electrodes of the PIN diodes are applied with first direct current bias voltage, and the isolation port of the second coupler is connected with the coupling port of the third coupler;
the through port and the coupling port of the fourth coupler are both connected with PIN diodes, second direct current bias voltage is applied to the positive electrode of each PIN diode, and the isolation port of the fourth coupler is connected with the through port of the third coupler;
and the third coupler receives and synthesizes signals transmitted by the second coupler and the fourth coupler, and finally outputs the signals to the power synthesizer.
Further, the input coupler, the first coupler, the second coupler, the third coupler and the fourth coupler are all 3dB directional couplers.
Furthermore, the 3dB directional coupler and the power synthesizer are designed by adopting microstrip line structures, and the power synthesizer adopts a design mode of a Wilkinson power divider.
A control method of an S-band high-power double-balanced vector modulator based on a PIN diode comprises the following steps:
acquiring the voltage value V of the direct current bias voltage applied by the PIN diode when the resistance value of the PIN diode is 50 ohms0；
Adjusting the sum of the first direct current bias voltage and the second direct current bias voltage in the two sub-modulation modules to be 2V0So that the phases of the reflection coefficients of the two sub-modulation modules are 0 and 180 degrees.
The invention has the beneficial effects that:
the S-band high-power double-balance vector modulator based on the PIN diode integrally adopts a double-balance design structure, is easy to integrate, and can realize the attenuation within the range of-50 dB to-12 dB at 360 degrees.
Drawings
Fig. 1 is a block diagram of a circuit configuration of a double balanced vector modulator provided in embodiment 1;
fig. 2 is a front view of a PCB design of a double balanced vector modulator provided in embodiment 2, in which 1 is a microstrip line metal patch and a circuit component layer, 2 is a Rogers4350 plate, and 3 is a metal ground plate;
fig. 3 is a schematic view of the vector gain characteristic of the double balanced vector modulator provided in embodiment 1;
FIG. 4 is a graph of the magnitude and phase results of the S-parameters of the microstrip 3dB directional coupler provided in example 1;
FIG. 5 is a graph of the magnitude and phase results of the S-parameters of the microstrip 3dB directional coupler provided in example 1;
fig. 6 is a graph of the results of the S-parameters of the power combiner provided in embodiment 1;
fig. 7 is a graph showing the results of the isolation between the two input ports of the power combiner provided in embodiment 1;
FIG. 8 shows that the I-path DC bias voltage is V0Route QDC bias voltage from 0 to 2V0Scanning the S parameter result;
FIG. 9 shows that the I-path DC bias voltage is less than V0The Q-path direct-current bias voltage is from 0 to 2V0Scanning the S parameter result;
FIG. 10 shows that the I-path DC bias voltage is greater than V0The Q-path direct-current bias voltage is from 0 to 2V0Scans the S parameter results.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Referring to fig. 1, 3-7, the present implementation provides a PIN diode based S-band high power double balanced vector modulator comprising: the device comprises an input coupler, a modulation module and a power combiner;
the input coupler receives an input signal, generates two paths of orthogonal signals and outputs the signals through two output ports of the input coupler;
the modulation module comprises two sub-modulation modules with symmetrical structures, the two sub-modulation modules are respectively connected with two output ports of the input coupler and receive signals transmitted by the input coupler, then the amplitude and the phase of the received signals are modulated, and finally the processed signals are transmitted to the power synthesizer;
the power synthesizer is connected with the two sub-modulation modules and receives and synthesizes signals after modulation processing;
the sub-modulation module comprises a first coupler, a second coupler, a third coupler, and a fourth coupler, wherein,
an input port of the first coupler is connected with an output port of one of the input couplers, an isolation port of the first coupler is grounded, a coupling port of the first coupler is connected with an input port of the second coupler, and a through port of the first coupler is connected with an input port of the fourth coupler;
the through port and the coupling port of the second coupler are both connected with PIN diodes, the positive pole of each PIN diode is applied with a first direct current bias voltage, and the isolation port of the second coupler is connected with the coupling port of the third coupler;
the through port and the coupling port of the fourth coupler are both connected with PIN diodes, second direct current bias voltage is applied to the positive pole of each PIN diode, and the isolation port of the fourth coupler is connected with the through port of the third coupler;
and the third coupler receives the signals transmitted by the second coupler and the fourth coupler, synthesizes the signals and finally outputs the synthesized signals to the power synthesizer.
Specifically, in the present embodiment, the input coupler, the first coupler, the second coupler, the third coupler, and the fourth coupler are all 3dB directional couplers.
Example 2
Referring to fig. 2, in fig. 2, 1 is a microstrip line metal patch and circuit component layer, and the thickness of the microstrip line metal patch is 0.035 mm; 2 is a Rogers4350B board with a dielectric constant of 3.66 and a thickness of 0.508 mm; 3, a metal grounding plate, wherein the thickness of the metal is 0.035 mm; in this embodiment, on the basis of embodiment 1, a method for manufacturing a high-power double balanced vector modulator is provided, including:
step 1, calculating parameters of a microstrip 3dB directional coupler capable of working in a frequency band of 1.75 GHz-2.10 GHz, specifically comprising the following steps:
calculating the length of a quarter-wavelength line according to the working frequency band; according to the characteristic impedance of the microstrip line, the width of the microstrip line and the thickness of the metal patch of the microstrip line are set, so that S parameters of a through port and a coupling port of the 3dB directional coupler are all-3 dB, the phase difference between the two ports is kept at 90 degrees, and the amplitudes are basically the same.
Step 2, designing parameters of the power synthesizer capable of working at the frequency band of 1.75 GHz-2.10 GHz, which specifically comprises the following steps:
the power synthesizer is designed by adopting a design method of a Wilkinson power divider, and the power divider can also be used as the synthesizer. Calculating the length of a quarter-wave line by adopting a microstrip line design; and setting the width of the microstrip line and the thickness of the metal patch of the microstrip line according to the characteristic impedance of the microstrip line. And a resistor is added between the two input ports to improve isolation.
Example 3
Referring to fig. 8 to fig. 10, this embodiment provides a control method of an S-band high-power double balanced vector modulator based on a PIN diode based on embodiment 1, and before describing specific steps, the working principle of the high-power double balanced vector modulator in embodiment 1 is specifically described, specifically:
the radio frequency signal is input from an input coupler (3dB directional coupler), two paths of orthogonal IQ signals are output, and the two paths of orthogonal IQ signals are respectively input into a sub-modulation module, specifically:
firstly, a first coupler in a sub-modulation module receives the I signal or the Q signal;
then, the I signal or the Q signal is processed by the first coupler and then transmitted into the second coupler and the fourth coupler, four paths of signals are shared at the moment, through ports and coupling ports of the second coupler and the fourth coupler are respectively connected with a PIN diode, direct current bias voltage is applied to the PIN diode, the signals are reflected after being input into the PIN diode, the two paths of signals are synthesized by the corresponding couplers and then output from an isolation port of the coupler and are respectively marked as I2、I3、Q2、Q3More specifically, the I-path synthesized signal has only two phases with a phase difference of 180 degrees, and the phase difference between the Q-path signal and the I-path signal is 90 degrees;
finally, I2And I3、Q2And Q3Synthesizing output through a third coupler, and respectively recording two paths of synthesized signals as I4、Q4，I4And Q4The outputs are combined by a power combiner.
I4And Q4Have a phase difference of 90 degrees between them when I4When the phase is 90 degrees, Q4Is 0 or 180 degrees; when Q is4When the phase is 0 degree, I4Is 90 or-90 degrees. I is4And Q4The phase and the amplitude of the output signal are determined by the reflected signal at the PIN diode, so that the amplitude and the phase of the final output signal can be changed by controlling the external direct current bias voltage, and 360-degree omnidirectional phase modulation is realized.
The control method provided in this embodiment includes the following steps:
acquiring the voltage value V of the direct current bias voltage applied by the PIN diode when the resistance value of the PIN diode is 50 ohms0；
Adjusting the sum of the first direct current bias voltage and the second direct current bias voltage in the two sub-modulation modules to be 2V0So that the phases of the reflection coefficients of the two sub-modulation modules are 0 and 180 degrees.
Specifically, for the I-path or Q-path sub-modulation module, the DC bias voltage control signal is VI+、VI-、VQ+、VQ-，VI+And VI-、VQ+And VQ-All of (2) are 2V0And the two paths of control voltages are complementary, so that the phases of the reflection coefficients at the two sub-modulation modules are 0 and 180 degrees.
In summary, in the S-band high-power double-balanced vector modulator based on the PIN diode provided by the invention, the 3dB directional coupler and the power combiner are designed by microstrip line structures, and the whole double-balanced design structure is adopted, which is beneficial to eliminating parasitic parameters of the PIN diode. The PIN diode has different resistance values under different external direct current bias voltages, and by utilizing the characteristic, when an input signal is input into the PIN diode, reflection occurs, and different amplitudes and phases are obtained.
The invention is not described in detail, but is well known to those skilled in the art.
The foregoing detailed description of the preferred embodiments of the invention has been presented. It should be understood that numerous modifications and variations could be devised by those skilled in the art in light of the present teachings without departing from the inventive concepts. Therefore, the technical solutions available to those skilled in the art through logic analysis, reasoning and limited experiments based on the prior art according to the concept of the present invention should be within the scope of protection defined by the claims.

Claims (4)

1. An S-band high-power double-balanced vector modulator based on PIN diodes, comprising: the device comprises an input coupler, a modulation module and a power combiner;
the input coupler receives an input signal, generates two paths of orthogonal signals and outputs the two paths of orthogonal signals through two output ports of the input coupler;
the modulation module comprises two sub-modulation modules with symmetrical structures, the two sub-modulation modules are respectively connected with two output ports of the input coupler and receive signals transmitted by the two sub-modulation modules, then the amplitude and the phase of the received signals are modulated, and finally the processed signals are transmitted to the power synthesizer;
the power synthesizer is connected with the two sub-modulation modules and receives and synthesizes signals after modulation processing;
the sub-modulation module comprises a first coupler, a second coupler, a third coupler, and a fourth coupler, wherein,
an input port of the first coupler is connected with an output port of one of the input couplers, an isolation port of the first coupler is grounded, a coupling port of the first coupler is connected with an input port of the second coupler, and a through port of the first coupler is connected with an input port of the fourth coupler;
the through port and the coupling port of the second coupler are both connected with PIN diodes, the positive electrodes of the PIN diodes are applied with first direct current bias voltage, and the isolation port of the second coupler is connected with the coupling port of the third coupler;
the through port and the coupling port of the fourth coupler are both connected with PIN diodes, second direct current bias voltage is applied to the positive electrode of each PIN diode, and the isolation port of the fourth coupler is connected with the through port of the third coupler;
and the third coupler receives and synthesizes signals transmitted by the second coupler and the fourth coupler, and finally outputs the signals to the power synthesizer.
2. The PIN diode-based S-band high-power double balanced vector modulator of claim 1, wherein the input coupler, the first coupler, the second coupler, the third coupler, and the fourth coupler are all 3dB directional couplers.
3. The PIN diode-based S-band high-power double-balanced vector modulator of claim 2, wherein the 3dB directional coupler and the power combiner are designed in a microstrip line structure, and the power combiner is designed in a Wilkinson power divider.
4. A control method of a PIN diode based S-band high power double balanced vector modulator according to any of claims 1-3, characterized by comprising the steps of:
acquiring the voltage value V of the direct current bias voltage applied by the PIN diode when the resistance value of the PIN diode is 50 ohms0；
Adjusting the sum of the first direct current bias voltage and the second direct current bias voltage in the two sub-modulation modules to be 2V0So that the phases of the reflection coefficients of the two sub-modulation modules are 0 and 180 degrees.
CN202110823211.5A 2021-07-21 2021-07-21 S-band high-power double-balanced vector modulator based on PIN diode and control method thereof Pending CN113589233A (en)

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