CN101888218A - Simulated reflection type I-Q vector modulation circuit based on GaAs (Generally accepted Auditing standards) HBT (Heterojunction Bipolar Transistor) device - Google Patents
Simulated reflection type I-Q vector modulation circuit based on GaAs (Generally accepted Auditing standards) HBT (Heterojunction Bipolar Transistor) device Download PDFInfo
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Abstract
The invention discloses a simulated reflection type I-Q vector modulation circuit based on a GaAs (Generally accepted Auditing standards) HBT (Heterojunction Bipolar Transistor) device, mainly solving the problems of large chip-occupied area ratio and high cost of the traditional modulation circuit and comprising a 3-dB Lange coupler (1), two simulated reflection type attenuators (6, 7) and a 3-dB Wilkinson power combiner (10), wherein the straight-through port of the 3-dB Lange coupler is outputted to one input end of the power combiner (10) after directly subjected to phase shift by the first attenuator (6), and the coupling port of the 3-dB Lange coupler is outputted to the other input end of the power combiner (10) after directly subjected to phase shift by the second attenuator (7), wherein the collector electrodes of a gallium arsenide hetero-junction bipolar transistor of each simulated reflection type attenuator are respectively connected with resistors R3 and R4 in parallel for reducing a reflection factor gamma when Vb is equal to 0, and the transmission electrodes of the gallium arsenide hetero-junction bipolar transistors are respectively connected with inductors L1 and L2 in series for offsetting a parasitic effect generated by the HNT device. The invention can be used for generating I-Q modulation signals or carrying out frequency conversion.
Description
Technical field
The invention belongs to technical field of integrated circuits, particularly a kind of reflection-type I-Q Vector Modulation circuit is used for digital communication, produces the I-Q modulation signal or carries out frequency inverted.
Background technology
Say that traditionally in microwave and Millimeter Wave Applications, vector modulator mainly contains two kinds of implementation structures.First kind is to utilize two quadrature biphase modulators to form by the 3-dB power combiner; Second kind is to utilize a variable attenuator and 360 ° of variable phase-shifter to form.Though in second kind of structure, it is very little to insert loss, needs attenuator to have fixing phase place and phase-shifter that fixing insertion loss is arranged, this makes circuit design difficulty very.Therefore, in microwave and Millimeter Wave Applications, first kind of structure being made up of the variable simulated reflections type of two-phase attenuator often is widely used.
The variable simulated reflections type of two-phase attenuator application is at first proposed by Devlin and Minnis in vector modulator.The reflection-type attenuator is made up of Lange coupler and two cold mould devices as quadrature hybrid, and cold mould device adopts high electron mobility transistor (HEMT) or heterojunction bipolar transistor HBT.The bias voltage that adopts cold mould HEMT device to bear is realized modulation function, and adopts cold mould HBT only to need positive bias just can realize.Cold mould HBT device has bigger parasitic parameter, can eliminate error by caused amplitude of ghost effect and phase place by balance or push-pull circuit structure.This structure can realize symmetric constellation figure preferably, but chip occupying area is bigger, and cost is than higher.
Summary of the invention
The objective of the invention is to overcome the deficiency of above-mentioned vector modulator, a kind of simulated reflections type I-Q Vector Modulation circuit based on the GaAsHBT device is provided,, improve chip performance to reduce chip area footprints and power consumption.
Technical scheme of the present invention is achieved in that
1. know-why
Based on the insertion loss of the simulated reflections type I-Q Vector Modulation circuit of GaAs HBT device mainly by the reflection coefficient Γ decision of the collector electrode of the variable resistor terminal GaAs HBT of attenuator, require the amplitude of reflection coefficient Γ when Vb=0 and Vb=Von two states to equate that phase difference is 180 °.When Vb=0, the impedance of variable resistor terminal GaAs HBT is far longer than 50 Ω, and reflection coefficient was very big when signal was transferred to variable resistor terminal GaAs HBT like this; When Vb=Von, owing to have dead resistance in the GaAs HBT device, the impedance of variable resistor terminal GaAs HBT reduces less than desirable state, and is little when making when signal is transferred to variable resistor terminal GaAs HBT reeflectance ratio Vb=0.By the reflection coefficient when GaAs HBT collector electrode suitable resistance in parallel can suitably reduce Vb=0 | Γ |, make the amplitude of reflection coefficient Γ when Vb=0 and Vb=Von two states of collector electrode of variable resistor terminal GaAs HBT of reflection-type attenuator equate.Because base stage, collector electrode and the emitter ghost effect that parasitic capacitance caused each other of GaAs HBT device, so reflection coefficient Γ when Vb=0 and Vb=Von two states phase difference away from 180 °, by offsetting this ghost effect, make that the phase difference of reflection coefficient Γ when Vb=0 and Vb=Von two states of collector electrode of variable resistor terminal GaAs HBT of reflection-type attenuator is 180 ° at inductance of GaAs HBT emitter series connection
2. modulation circuit structure
Of the present invention at modulation circuit, comprise: a 3-dB lange coupler, two simulated reflections type attenuators, with 1 3-dB wilkinson power combiner, the output of the straight-through port of this 3-dB lange coupler is directly by outputing to an input of power combiner after the first attenuator phase shift; The coupling port of this 3-dB lange coupler directly by outputing to another input of power combiner after the second attenuator phase shift, export from output the synthetic back of two signals of input by power combiner.
Described simulated reflections type attenuator, comprise a 3-dB lange coupler, two gallium arsenide hbt having Q1 and Q2, and two resistance R 3 and R4, the input port of this 3-dB lange coupler is as the input port of attenuator, and isolated port is as the output port of attenuator; The straight-through port of this 3-dB lange coupler links to each other with the collector electrode of Q1 and Q2 respectively with coupling port; The base stage of Q1 and Q2 links to each other with R3, R4 respectively, and the other end of resistance R 3 and R4 links together as the control port Vb of attenuator; Wherein the collector electrode of Q1 and Q2 is connected in parallel to resistance R 1 and R2 respectively, the reflection coefficient when reducing Vb=0 | Γ |; The emitter of Q1 and Q2 is connected in series with inductance L 1 and L2 respectively, in order to offset base stage, collector electrode and the emitter ghost effect that parasitic capacitance caused each other owing to the HBT device.
The present invention has following advantage:
(1) modulation circuit of the present invention only adopts two simulated reflections type attenuators, directly be connected the straight-through port and the coupling port of 3-dBlange coupler, and directly synthesize by 3-dB wilkinson power combiner, modulation circuit with respect in the past balance or push-pull circuit structure adopts four simulated reflections type attenuators and additional four couplers to realize function, under the prerequisite that does not influence circuit function, save a large amount of chip areas, thereby saved cost of manufacture.
(2) the present invention is because at the collector electrode of a GaAs HBT device Q1 and Q2 resistance R 1 and the R2 that resistance equates that has been connected in parallel respectively, reflection coefficient when making Vb=0 | Γ | reduce, thereby the amplitude of reflection coefficient Γ when Vb=0 and Vb=Von two states of collector electrode of the variable resistor terminal GaAs HBT of reflection-type attenuator equated, reduced the insertion loss of integrated circuit.
(3) the present invention is because at the emitter of a GaAs HBT device Q1 and Q2 inductance L 1 and the L2 that inductance value equates that has been connected in series respectively, thereby offset because base stage, collector electrode and the emitter ghost effect that parasitic capacitance caused each other of GaAs HBT device, make that the phase difference of reflection coefficient Γ when Vb=0 and Vb=Von two states of collector electrode of variable resistor terminal GaAs HBT of reflection-type attenuator is 180 °, in the insertion loss that reduces integrated circuit, improved the accuracy of phase modulated.
Description of drawings
Fig. 1 is existing simulated reflections type I-Q Vector Modulation circuit diagram based on GaAs HBT device;
Fig. 2 is existing simulated reflections type attenuator circuit figure;
Fig. 3 is the simulated reflections type I-Q Vector Modulation circuit diagram that the present invention is based on GaAs HBT device;
Fig. 4 is the simulated reflections type attenuator circuit figure among the present invention;
Fig. 5 is the ratio and the phase difference of the reflection coefficient amplitude of simulated reflections type attenuator of the present invention when Vb=0 and Vb=Von two states.
Embodiment
With reference to Fig. 1, existing simulated reflections type I-Q Vector Modulation circuit diagram based on GaAs HBT device, comprise five 3-dB lange couplers 1,2,3,4,5, four simulated reflections type attenuators 6,7,8,9, with a 3-dB wilkinson power combiner 10, this 3-dB lange coupler has four ports, is respectively input port, isolated port, straight-through port and coupling port, signal is imported from input port, from the output of straight-through port and coupling port respectively with the input signal signal of 0 ° of phasic difference and 90 ° mutually.The input port of the one 3-dB lange coupler 1 is as the input of modulation circuit, and straight-through port and coupling port are connected the input port of the 2nd 3-dB lange coupler 2 and the 3rd 3-dB lange coupler 3 respectively; The coupling port of the 2nd 3-dB lange coupler 2 and straight-through port are connected the input of the first simulated reflections type attenuator 6 and the second simulated reflections type attenuator 7 respectively; This first simulated reflections type attenuator 6 and the output of the second simulated reflections type attenuator 7 are connected the coupling port and the straight-through port of the 4th 3-dB lange coupler 4 respectively; The first simulated reflections type attenuator, 6 control port VI and the second simulated reflections type attenuator, 7 control ports
The control signal high-low level opposite, as two control ends of modulation circuit; The coupling port of the 3rd 3-dB lange coupler 3 and straight-through port are connected the input of the 3rd simulated reflections type attenuator 8 and the 4th simulated reflections type attenuator 9 respectively; The 3rd simulated reflections type attenuator 8 and the output of the 4th simulated reflections type attenuator 9 are connected the coupling port and the straight-through port of the 5th 3-dB lange coupler 5 respectively; The first simulated reflections type attenuator, 8 control port VQ and the second simulated reflections type attenuator, 9 control ports
The control signal high-low level opposite, as two other control end of modulation circuit; The resistance that respectively is connected one 50 Ω between this 3-dB lange coupler 1,2,3,4,5 isolated port and ground; The input port of the 4th 3-dB lange coupler 4 connects an input port of 3-dB wilkinson power combiner 10; The input port of the 5th 3-dB lange coupler 5 connects another input port of 3-dB wilkinson power combiner 10; The output port of this 3-dB wilkinson power combiner 10 is as the output of modulation circuit.
With reference to Fig. 2, existing simulated reflections type attenuator circuit figure, comprise a 3-dB lange coupler, two gallium arsenide hbt having Q1 and Q2, and two resistance R 1 and R2, the input port of this 3-dB lange coupler is as the input port of attenuator, and isolated port is as the output port of attenuator; The output of the straight-through port of this 3-dB lange coupler and input signal mutually 0 ° of phasic difference signal and link to each other with the Q1 collector electrode, coupling port export with input signal mutually 90 ° of phasic differences signal and link to each other with the collector electrode of Q2; The base stage of Q1 and Q2 links to each other with R1, R2 respectively, and the other end of resistance R 1 and R2 links together as the control port Vb of attenuator.
With reference to Fig. 3, the present invention is based on the simulated reflections type I-Q Vector Modulation circuit of GaAs HBT device, mainly form by 1,1 3-dB wilkinson of 3-dB lange coupler power combiner 10 and two simulated reflections type attenuators 6 and 7.The output of the straight-through port of this 3-dB lange coupler and input signal be the signal of 0 ° of phasic difference mutually, and direct by outputing to an input of power combiner 10 after 6 phase shifts of first attenuator; The output of the coupling port of this 3-dB lange coupler and input signal be the signal of 90 ° of phasic differences mutually, and directly by outputing to another input of power combiner 10 after 7 phase shifts of second attenuator, the synthetic back output of 10 pairs of these two input signals of power combiner; The first simulated reflections type attenuator, 6 control port VI and the second simulated reflections type attenuator, 7 control port VQ are as two control ends of modulation circuit.
With reference to Fig. 4, the simulated reflections type attenuator among the present invention comprises a 3-dB lange coupler, two gallium arsenide hbt having Q1 and Q2, four resistance R 1, R2, R3 and R4, and two inductance L 1 and L2, wherein, the resistance of resistance R 3 and R4 equates, and is 140 ± 1 Ω; The inductance value of inductance L 1 and L2 equates, and is 43 ± 1pH.The input port of this 3-dB lange coupler is as the input port of attenuator, and isolated port is as the output port of attenuator; The straight-through port of this 3-dB lange coupler links to each other with the collector electrode of Q1 and Q2 respectively with coupling port; The collector electrode of Q1 and Q2 is connected in parallel with resistance R 3 and R4 respectively, the reflection coefficient when reducing Vb=0 | Γ |; The base stage of Q1 and Q2 links to each other with R1, R2 respectively, and the other end of resistance R 1 and R2 links together as the control port Vb of attenuator; The emitter of Q1 and Q2 is connected in series with inductance L 1 and L2 respectively, in order to offset base stage, collector electrode and the emitter ghost effect that parasitic capacitance caused each other owing to the HBT device.The signal phase difference of output port output was 180 ° when the signal of output port output and Vb equaled high level Von when control port Vb equals low level 0.
Ratio and phase difference simulation result to the reflection coefficient amplitude of simulated reflections type attenuator of the present invention when Vb=0 and the Vb=Von two states, as shown in Figure 5, wherein Fig. 5 (a) is the ratio of the reflection coefficient amplitude of simulated reflections type attenuator when Vb=0 and Vb=Von two states, and Fig. 5 (b) is that the reflection coefficient phase of simulated reflections type attenuator when Vb=0 and Vb=Von two states is poor.As seen from Figure 5, simulated reflections type attenuator of the present invention, when signal frequency was 30GHz, the ratio of the amplitude of the reflection coefficient Γ of the collector electrode of variable resistor terminal GaAs HBT when Vb=0 and Vb=Von two states was 1, phase difference is 180 °.Illustrate that the reflection coefficient Γ of collector electrode of the variable resistor terminal GaAs HBT of simulated reflections type attenuator of the present invention has reached the requirement of simulated reflections type I-Q Vector Modulation circuit, has reduced the insertion loss when realizing function.
Claims (4)
1. simulated reflections type I-Q Vector Modulation circuit based on GaAs HBT device, it is characterized in that comprising: a 3-dB lange coupler (1), two simulated reflections type attenuators (6,7), with 1 3-dB wilkinson power combiner (10), the output of the straight-through port of this 3-dB lange coupler is directly by outputing to an input of power combiner (7) after first attenuator (6) phase shift; Directly by outputing to another input of power combiner (10) after second attenuator (6) phase shift, power combiner (10) is to the synthetic back output of these two input signals in the coupling port output of this 3-dB lange coupler.
2. simulated reflections type I-Q Vector Modulation circuit according to claim 1, it is characterized in that simulated reflections type attenuator, comprise a 3-dB lange coupler, two gallium arsenide hbt having Q1 and Q2, four resistance R 1, R2, R3 and R4, and two inductance L 1 and L2, the input port of this 3-dB lange coupler is as the input port of attenuator, and isolated port is as the output port of attenuator; The straight-through port of this 3-dB lange coupler links to each other with the collector electrode of Q1 and Q2 respectively with coupling port; The collector electrode of Q1 and Q2 is connected in parallel with resistance R 3 and R4 respectively, the reflection coefficient when reducing Vb=0 | Γ |; The base stage of Q1 and Q2 links to each other with R1, R2 respectively, and the other end of resistance R 1 and R2 links together as the control port Vb of attenuator; The emitter of Q1 and Q2 is connected in series with inductance L 1 and L2 respectively, in order to offset base stage, collector electrode and the emitter ghost effect that parasitic capacitance caused each other owing to the HBT device.
3. the simulated reflections type attenuator based on GaAs HBT device according to claim 2 is characterized in that the resistance of resistance R 3 and R4 equates, and is 140 ± 1 Ω.
4. the simulated reflections type attenuator based on GaAs HBT device according to claim 2 is characterized in that the inductance value of inductance L 1 and L2 equates, and is 43 ± 1pH.
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| CN 201010214611 CN101888218B (en) | 2010-06-30 | 2010-06-30 | Simulated reflection type I-Q vector modulation circuit based on GaAs (Generally accepted Auditing standards) HBT (Heterojunction Bipolar Transistor) device |
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| CN 201010214611 CN101888218B (en) | 2010-06-30 | 2010-06-30 | Simulated reflection type I-Q vector modulation circuit based on GaAs (Generally accepted Auditing standards) HBT (Heterojunction Bipolar Transistor) device |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569972A (en) * | 2010-12-17 | 2012-07-11 | 成都飞机工业（集团）有限责任公司 | Method for improving performance indexes of directional coupler |
| CN103217638A (en) * | 2013-05-05 | 2013-07-24 | 西安电子科技大学 | Method for testing performance of GaAs HBT component after gamma irradiation |
| CN105280991A (en) * | 2015-11-13 | 2016-01-27 | 南京米乐为微电子科技有限公司 | Ultra-wideband digital phase shifter |
| CN105811885A (en) * | 2016-03-09 | 2016-07-27 | 成都雷电微力科技有限公司 | High-output-power vector modulator |
| CN106532197A (en) * | 2016-11-13 | 2017-03-22 | 中国科学院近代物理研究所 | Wideband digital adjustable phase shifter for accelerator random cooling system |
| CN106848608A (en) * | 2017-01-25 | 2017-06-13 | 东南大学 | The forming integrated antenna array of broadband mixed-beam |
| CN108111145A (en) * | 2018-02-10 | 2018-06-01 | 北京工业大学 | A kind of attenuator |
| WO2019024582A1 (en) * | 2017-08-01 | 2019-02-07 | Huawei Technologies Co., Ltd. | High-linearity quadrature hybrid attenuator |
| CN110035026A (en) * | 2019-04-10 | 2019-07-19 | 中国电子科技集团公司第十三研究所 | Microwave QPSK modulation circuit and electronic equipment |
| CN110474610A (en) * | 2019-07-04 | 2019-11-19 | 中国科学院上海微***与信息技术研究所 | A kind of vector modulator |
| CN110798170A (en) * | 2018-08-01 | 2020-02-14 | 派赛公司 | Low loss reflective passive phase shifter using time delay elements with dual resolution |
| CN113589233A (en) * | 2021-07-21 | 2021-11-02 | 东南大学 | S-band high-power double-balanced vector modulator based on PIN diode and control method thereof |
| CN114843781A (en) * | 2022-04-18 | 2022-08-02 | 电子科技大学长三角研究院(湖州) | Terahertz vector modulator based on gallium arsenide diode |
| CN116488983A (en) * | 2023-04-25 | 2023-07-25 | 西安博瑞集信电子科技有限公司 | I-Q vector modulator and radio frequency signal modulation method applied by same |
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Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569972A (en) * | 2010-12-17 | 2012-07-11 | 成都飞机工业（集团）有限责任公司 | Method for improving performance indexes of directional coupler |
| CN103217638A (en) * | 2013-05-05 | 2013-07-24 | 西安电子科技大学 | Method for testing performance of GaAs HBT component after gamma irradiation |
| CN105280991B (en) * | 2015-11-13 | 2018-05-29 | 南京米乐为微电子科技有限公司 | Ultra-broadband digital phase shifter |
| CN105280991A (en) * | 2015-11-13 | 2016-01-27 | 南京米乐为微电子科技有限公司 | Ultra-wideband digital phase shifter |
| CN105811885A (en) * | 2016-03-09 | 2016-07-27 | 成都雷电微力科技有限公司 | High-output-power vector modulator |
| CN106532197A (en) * | 2016-11-13 | 2017-03-22 | 中国科学院近代物理研究所 | Wideband digital adjustable phase shifter for accelerator random cooling system |
| CN106532197B (en) * | 2016-11-13 | 2021-09-17 | 中国科学院近代物理研究所 | Broadband digital adjustable phase shifter for accelerator random cooling system |
| CN106848608A (en) * | 2017-01-25 | 2017-06-13 | 东南大学 | The forming integrated antenna array of broadband mixed-beam |
| CN106848608B (en) * | 2017-01-25 | 2020-03-17 | 东南大学 | Broadband mixed beam forming integrated antenna array |
| WO2019024582A1 (en) * | 2017-08-01 | 2019-02-07 | Huawei Technologies Co., Ltd. | High-linearity quadrature hybrid attenuator |
| CN108111145A (en) * | 2018-02-10 | 2018-06-01 | 北京工业大学 | A kind of attenuator |
| CN110798170B (en) * | 2018-08-01 | 2023-10-10 | 派赛公司 | Low loss reflective passive phase shifter using time delay elements with dual resolution |
| CN110798170A (en) * | 2018-08-01 | 2020-02-14 | 派赛公司 | Low loss reflective passive phase shifter using time delay elements with dual resolution |
| CN110035026B (en) * | 2019-04-10 | 2022-06-10 | 中国电子科技集团公司第十三研究所 | Microwave QPSK modulation circuit and electronic equipment |
| CN110035026A (en) * | 2019-04-10 | 2019-07-19 | 中国电子科技集团公司第十三研究所 | Microwave QPSK modulation circuit and electronic equipment |
| CN110474610A (en) * | 2019-07-04 | 2019-11-19 | 中国科学院上海微***与信息技术研究所 | A kind of vector modulator |
| CN113589233A (en) * | 2021-07-21 | 2021-11-02 | 东南大学 | S-band high-power double-balanced vector modulator based on PIN diode and control method thereof |
| CN114843781A (en) * | 2022-04-18 | 2022-08-02 | 电子科技大学长三角研究院(湖州) | Terahertz vector modulator based on gallium arsenide diode |
| CN114843781B (en) * | 2022-04-18 | 2023-04-28 | 电子科技大学长三角研究院(湖州) | Terahertz vector modulator based on gallium arsenide diode |
| CN116488983A (en) * | 2023-04-25 | 2023-07-25 | 西安博瑞集信电子科技有限公司 | I-Q vector modulator and radio frequency signal modulation method applied by same |
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