CN113571575A - 碳化硅功率半导体器件和场效应晶体管 - Google Patents
碳化硅功率半导体器件和场效应晶体管 Download PDFInfo
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- CN113571575A CN113571575A CN202110644991.7A CN202110644991A CN113571575A CN 113571575 A CN113571575 A CN 113571575A CN 202110644991 A CN202110644991 A CN 202110644991A CN 113571575 A CN113571575 A CN 113571575A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 40
- 230000005669 field effect Effects 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 210000000746 body region Anatomy 0.000 claims description 26
- 230000007480 spreading Effects 0.000 claims description 18
- 238000003892 spreading Methods 0.000 claims description 18
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
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CN202110644991.7A CN113571575B (zh) | 2021-06-09 | 2021-06-09 | 碳化硅功率半导体器件和场效应晶体管 |
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CN202110644991.7A CN113571575B (zh) | 2021-06-09 | 2021-06-09 | 碳化硅功率半导体器件和场效应晶体管 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023178866A1 (zh) * | 2022-03-21 | 2023-09-28 | 苏州东微半导体股份有限公司 | 碳化硅器件及其制造方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6566708B1 (en) * | 2000-11-17 | 2003-05-20 | Koninklijke Philips Electronics N.V. | Trench-gate field-effect transistors with low gate-drain capacitance and their manufacture |
CN101145576A (zh) * | 2006-09-12 | 2008-03-19 | 东部高科股份有限公司 | 沟槽型mos晶体管及其制造方法 |
US20160190264A1 (en) * | 2014-12-31 | 2016-06-30 | Super Group Semiconductor Co., Ltd. | Trench power mosfet and manufacturing method thereof |
CN106449744A (zh) * | 2016-12-02 | 2017-02-22 | 株洲中车时代电气股份有限公司 | 一种新型具有栅极内嵌二极管的沟槽栅igbt及其制备方法 |
CN106783611A (zh) * | 2017-03-21 | 2017-05-31 | 株洲中车时代电气股份有限公司 | 一种具有栅极内嵌二极管的沟槽栅igbt及其制备方法 |
CN107658340A (zh) * | 2017-09-02 | 2018-02-02 | 西安交通大学 | 一种双沟槽的低导通电阻、小栅电荷的碳化硅mosfet器件与制备方法 |
CN108365007A (zh) * | 2018-04-23 | 2018-08-03 | 广东美的制冷设备有限公司 | 绝缘栅双极型晶体管 |
CN110036461A (zh) * | 2016-12-08 | 2019-07-19 | 克里公司 | 具有带有注入侧壁的栅极沟槽的功率半导体器件及相关方法 |
CN110429134A (zh) * | 2019-08-02 | 2019-11-08 | 扬州国扬电子有限公司 | 一种具有非对称原胞的igbt器件及制备方法 |
CN112802903A (zh) * | 2021-04-15 | 2021-05-14 | 成都蓉矽半导体有限公司 | 一种改进栅结构的槽栅vdmos器件 |
-
2021
- 2021-06-09 CN CN202110644991.7A patent/CN113571575B/zh active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6566708B1 (en) * | 2000-11-17 | 2003-05-20 | Koninklijke Philips Electronics N.V. | Trench-gate field-effect transistors with low gate-drain capacitance and their manufacture |
CN101145576A (zh) * | 2006-09-12 | 2008-03-19 | 东部高科股份有限公司 | 沟槽型mos晶体管及其制造方法 |
US20160190264A1 (en) * | 2014-12-31 | 2016-06-30 | Super Group Semiconductor Co., Ltd. | Trench power mosfet and manufacturing method thereof |
CN106449744A (zh) * | 2016-12-02 | 2017-02-22 | 株洲中车时代电气股份有限公司 | 一种新型具有栅极内嵌二极管的沟槽栅igbt及其制备方法 |
CN110036461A (zh) * | 2016-12-08 | 2019-07-19 | 克里公司 | 具有带有注入侧壁的栅极沟槽的功率半导体器件及相关方法 |
CN106783611A (zh) * | 2017-03-21 | 2017-05-31 | 株洲中车时代电气股份有限公司 | 一种具有栅极内嵌二极管的沟槽栅igbt及其制备方法 |
CN107658340A (zh) * | 2017-09-02 | 2018-02-02 | 西安交通大学 | 一种双沟槽的低导通电阻、小栅电荷的碳化硅mosfet器件与制备方法 |
CN108365007A (zh) * | 2018-04-23 | 2018-08-03 | 广东美的制冷设备有限公司 | 绝缘栅双极型晶体管 |
CN110429134A (zh) * | 2019-08-02 | 2019-11-08 | 扬州国扬电子有限公司 | 一种具有非对称原胞的igbt器件及制备方法 |
CN112802903A (zh) * | 2021-04-15 | 2021-05-14 | 成都蓉矽半导体有限公司 | 一种改进栅结构的槽栅vdmos器件 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023178866A1 (zh) * | 2022-03-21 | 2023-09-28 | 苏州东微半导体股份有限公司 | 碳化硅器件及其制造方法 |
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Effective date of registration: 20220322 Address after: Building A1, innovation city, Songshanhu University, Dongguan, Guangdong 523000 Applicant after: Material Laboratory of Songshan Lake Applicant after: DONGGUAN University OF TECHNOLOGY Address before: Building A1, innovation city, Songshanhu University, Dongguan, Guangdong 523000 Applicant before: Material Laboratory of Songshan Lake |
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Effective date of registration: 20231116 Address after: 523808 room 522, building 11, No. 1, Xuefu Road, Songshanhu Park, Dongguan City, Guangdong Province Patentee after: Dongguan Qingxin Semiconductor Technology Co.,Ltd. Address before: Building A1, innovation city, Songshanhu University, Dongguan, Guangdong 523000 Patentee before: Material Laboratory of Songshan Lake Patentee before: DONGGUAN University OF TECHNOLOGY |
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