CN113556052B

CN113556052B - Control method of MOS switch type voltage regulator for motorcycle

Info

Publication number: CN113556052B
Application number: CN202110839237.9A
Authority: CN
Inventors: 李红星; 付强; 王开云
Original assignee: Chongqing Hecheng Electric Appliance Co ltd
Current assignee: Chongqing Hecheng Electric Appliance Co ltd
Priority date: 2021-07-23
Filing date: 2021-07-23
Publication date: 2022-12-23
Anticipated expiration: 2041-07-23
Also published as: CN113556052A

Abstract

The invention discloses a control method of a MOS switch type voltage regulator for a motorcycle, when the alternating current voltage of a magnetor A is a negative half-wave, an MOS tube T1 and an MOS tube T2 are turned off, and an MOS tube T3 is turned on, when the alternating current voltage of the magnetor A is a positive half-wave, the MOS tube T3 is turned off, and the MOS tube T1 and the MOS tube T2 are turned on or turned off, when the alternating current voltage of the magnetor B is a negative half-wave, an MOS tube T4 and an MOS tube T5 are turned off, and an MOS tube T6 is turned on, when the alternating current voltage of the magnetor B is a positive half-wave, the MOS tube T6 is turned off, and the MOS tube T4 and the MOS tube T5 are turned on or turned off; when the alternating current voltage of the magneto C is negative half-wave, the MOS transistor T7 and the MOS transistor T8 are turned off, and the MOS transistor T9 is turned on, and when the alternating current voltage of the magneto C is positive half-wave, the MOS transistor T9 is turned off, and the MOS transistor T7 and the MOS transistor T8 are turned on or turned off. The invention can realize the switch control purpose of the main circuit formed by 9 MOS tubes.

Description

Control method of MOS switch type voltage regulator for motorcycle

Technical Field

The invention relates to the technical field of motorcycle voltage regulators, in particular to a control method of an MOS switch type voltage regulator for a motorcycle.

Background

The voltage regulator is a common electronic device on a motorcycle and is mainly used for converting unstable alternating current generated by a magnetor on the motorcycle into stable direct current for loads such as a power bottle, headlights and the like.

In the prior art, a motorcycle voltage regulator has two structures of a switch type and a short circuit type; the major loop structure of the switch type voltage regulator is in a silicon controlled rectifier full-bridge or silicon controlled rectifier diode semi-controlled bridge mode, however, because the silicon controlled rectifier has large heat productivity, when the output current is larger than 30A, the voltage regulator made of the silicon controlled rectifier basically cannot use the silicon controlled rectifier as the switch type voltage regulator of the major loop because the heat dissipation cost is too high and the current is larger than 30A. The main loop structure of the short-circuit voltage regulator comprises a MOS tube diode three-phase half-control type, a MOS full-control type and a silicon controlled diode short-circuit type, wherein the silicon controlled diode short-circuit type can not be applied to occasions with current larger than 30A, and the voltage regulators with other two structural forms have the problem of high energy consumption.

When the switch type voltage regulator is used, the output energy of the switch type voltage regulator can change along with the change of the load, when the load at the rear end of the voltage regulator is large and the output energy is required to be increased, the output energy of the switch type voltage regulator is increased, the load of the magneto is also increased to meet the load requirement, and when the load at the rear end of the voltage regulator is decreased, the output energy of the voltage regulator is also decreased, the load of the magneto is also decreased, so that the switch type voltage regulator can automatically adjust the output energy according to the size of the load, and the energy waste is avoided; as for the short-circuit voltage regulator, as shown in fig. 1, a short-circuit voltage regulator composed of 6 MOS transistors in the prior art is used, and when energy needs to be output, the orthogonal current of phase a is rectified and output through an MOS transistor T2; when the output voltage is stable and energy is not required to be output, the MOS transistor T3 is switched on when the phase A is in positive alternating current, and the energy of the phase A is discharged through a ground wire, so that the magneto ACG is almost in a full-load working state at any time, because the load at the output end of the motorcycle voltage regulator is far smaller than the load at night in the daytime, and the output power of the voltage regulator and the output power of the magneto ACG are both designed according to the maximum load matching at night, a large amount of energy waste exists in the motorcycle when the motorcycle is used in the daytime, through measurement, when the actual load is 45% of the designed maximum load, the wasted converted power is the actual load power at the moment, and the load generally occupies about 20% of the designed load in the daytime, so that the short-circuit voltage regulator has serious energy waste when the motorcycle is used.

The comparison between the switch-type voltage regulator and the short-circuit voltage regulator shows that the switch-type voltage regulator has better energy saving performance compared with the short-circuit voltage regulator, but the traditional switch-type voltage regulator has the thyristor, so that the heat dissipation cost of the traditional switch-type voltage regulator in the case of large current is greatly increased, and therefore, how to design the voltage regulator which not only has the advantage of energy saving of the switch-type voltage regulator, but also is suitable for the large current is a technical problem which needs to be solved urgently by technical personnel in the field.

In view of the above problems, the inventor invented a MOS switch type voltage regulator for a motorcycle, as shown in fig. 2, which includes an upper bridge arm and a lower bridge arm, where the upper bridge arm includes a MOS transistor T1, a MOS transistor T2, a MOS transistor T4, a MOS transistor T5, a MOS transistor T7, and a MOS transistor T8, and the lower bridge arm includes a MOS transistor T3, a MOS transistor T6, and a MOS transistor T9; the source electrode of the MOS tube T1 is connected with a load, the drain electrode of the MOS tube T1 is connected with the drain electrode of the MOS tube T2, the source electrode of the MOS tube T2 is connected with the phase A output end of the magneto, the source electrode of the MOS tube T3 is grounded, and the drain electrode of the MOS tube T3 is connected with the phase A output end of the magneto; the source electrode of the MOS tube T4 is connected with the load, the drain electrode of the MOS tube T4 is connected with the drain electrode of the MOS tube T5, the source electrode of the MOS tube T5 is connected with the phase B output end of the magneto, the source electrode of the MOS tube T6 is grounded, and the drain electrode of the MOS tube T6 is connected with the phase B output end of the magneto; the source electrode of the MOS tube T7 is connected with the load, the drain electrode of the MOS tube T7 is connected with the drain electrode of the MOS tube T8, the source electrode of the MOS tube T8 is connected with the C-phase output end of the magneto, the source electrode of the MOS tube T9 is grounded, and the drain electrode of the MOS tube T9 is connected with the C-phase output end of the magneto. The voltage regulator can be applied to the occasions with large current because the problem of large heating quantity of the controllable silicon does not exist, but the purpose of switch type control can be realized only by controlling the voltage regulator, and the technical problem which needs to be solved urgently is also formed.

Disclosure of Invention

Aiming at the defects in the prior art, the technical problems to be solved by the invention are as follows: how to provide a control method of a MOS switch type voltage regulator for a motorcycle which can realize the purpose of switch type control on a main circuit formed by the 9 MOS tubes.

In order to solve the technical problem, the invention adopts the following technical scheme:

a control method of an MOS switch type voltage regulator for a motorcycle comprises an upper bridge arm and a lower bridge arm, wherein the upper bridge arm comprises an MOS tube T1, an MOS tube T2, an MOS tube T4, an MOS tube T5, an MOS tube T7 and an MOS tube T8, and the lower bridge arm comprises an MOS tube T3, an MOS tube T6 and an MOS tube T9;

the source electrode of the MOS tube T1 is connected with a load, the drain electrode of the MOS tube T1 is connected with the drain electrode of the MOS tube T2, the source electrode of the MOS tube T2 is connected with the phase A output end of the magneto, the source electrode of the MOS tube T3 is grounded, and the drain electrode of the MOS tube T3 is connected with the phase A output end of the magneto;

the source electrode of the MOS tube T4 is connected with a load, the drain electrode of the MOS tube T4 is connected with the drain electrode of the MOS tube T5, the source electrode of the MOS tube T5 is connected with the phase B output end of the magneto, the source electrode of the MOS tube T6 is grounded, and the drain electrode of the MOS tube T6 is connected with the phase B output end of the magneto;

the source electrode of the MOS tube T7 is connected with a load, the drain electrode of the MOS tube T7 is connected with the drain electrode of the MOS tube T8, the source electrode of the MOS tube T8 is connected with the C-phase output end of the magneto, the source electrode of the MOS tube T9 is grounded, and the drain electrode of the MOS tube T9 is connected with the C-phase output end of the magneto;

the control method comprises the following steps: when the alternating current voltage of the magnetor A is a negative half wave, the MOS tube T1 and the MOS tube T2 are turned off, the MOS tube T3 is turned on, and when the alternating current voltage of the magnetor A is a positive half wave, the MOS tube T3 is turned off, and the MOS tube T1 and the MOS tube T2 are turned on or turned off;

when the alternating current voltage of the magneto B is negative half-wave, the MOS transistor T4 and the MOS transistor T5 are turned off, and the MOS transistor T6 is turned on, and when the alternating current voltage of the magneto B is positive half-wave, the MOS transistor T6 is turned off, and the MOS transistor T4 and the MOS transistor T5 are turned on or turned off;

when the alternating current voltage of the magneto C is negative half-wave, the MOS transistor T7 and the MOS transistor T8 are turned off, and the MOS transistor T9 is turned on, and when the alternating current voltage of the magneto C is positive half-wave, the MOS transistor T9 is turned off, and the MOS transistor T7 and the MOS transistor T8 are turned on or turned off.

Therefore, when the alternating current voltage of the magneto A is negative half-wave, namely the phase current of the magneto A is less than or equal to 0, the MOS transistor T3 on the lower bridge arm of the phase A needs to be switched on at the moment so as to reduce the loss of the voltage regulator at the moment, and simultaneously, when the phase negative current of the magneto A is equal to 0 or before the phase negative current of the magneto A is equal to 0, the MOS transistor T3 on the lower bridge arm of the phase A needs to be switched off at the moment so as to achieve the purpose of switch type control.

Similarly, when the alternating current voltage of the B phase of the magneto is a negative half wave, namely the phase B current of the magneto is less than or equal to 0, the MOS transistor T6 on the lower bridge arm of the B phase needs to be switched on so as to reduce the loss of the voltage regulator at the moment, and when the phase B negative current of the magneto is equal to 0 or before the phase B negative current is equal to 0, the MOS transistor T6 on the lower bridge arm of the B phase needs to be switched off so as to achieve the purpose of switching control.

Similarly, when the ac voltage of the magneto C is a negative half-wave, that is, the phase current of the magneto C is less than or equal to 0, the MOS transistor T9 on the lower bridge arm of the C phase needs to be turned on to reduce the loss of the voltage regulator at this time, and when the phase negative current of the magneto C is equal to 0 or before being equal to 0, the MOS transistor T9 on the lower bridge arm of the C phase needs to be turned off to achieve the purpose of switching control.

In conclusion, the scheme not only reduces the loss of the voltage regulator, but also realizes the purpose of switch type control.

Preferably, a reference voltage Uref is set;

a sampling resistor R1 is connected in series between the source electrode of the MOS transistor T3 and the ground, and the on or off of the MOS transistor T3 is controlled by comparing the relation between a voltage value UOA on the sampling resistor R1 and a reference voltage Uref;

a sampling resistor R2 is connected between the source electrode of the MOS transistor T6 and the ground in series, and the on or off of the MOS transistor T6 is controlled by comparing the relation between a voltage value UOB1 on the sampling resistor R2 and a reference voltage Uref;

a sampling resistor R3 is connected in series between the source electrode of the MOS transistor T9 and the ground, and the MOS transistor T9 is controlled to be switched on or switched off by comparing the relation between the voltage value UOC1 on the sampling resistor R3 and the reference voltage Uref.

In this way, in order to achieve the purpose of turning off the MOS transistor on the lower bridge arm of the corresponding phase before the negative current of each phase is 0 or reaches 0, the purpose of turning off the MOS transistor of the lower bridge arm of the corresponding phase is achieved by setting the reference voltage Uref, connecting the sampling resistor in series with the MOS transistor of the lower bridge arm of each phase at the same time, and comparing the voltage on the sampling resistor with the reference voltage.

When the phase current of A is less than or equal to 0, the voltage value on the sampling resistor R1 connected with the MOS transistor T3 in series is UOA, because the voltage and the current on the sampling resistor R1 are in a proportional relation, when the current value on the sampling resistor R1 is less than or equal to 0, the voltage value UOA on the sampling resistor R1 is also less than or equal to 0, the reference voltage Uref is set to 0 or slightly less than 0 by setting the reference voltage Uref, when the phase current of A is increased to be close to 0 or equal to 0 from the negative current, the voltage value UOA on the sampling resistor R1 is also increased to be close to 0 or equal to 0, and when the voltage value UOA on the sampling resistor R1 is increased to exceed the reference voltage Uref, the MOS transistor T3 is turned off.

Similarly, when the phase B current is less than or equal to 0, the voltage value across the sampling resistor R2 connected in series with the MOS transistor T6 is UOB1, and since there is a direct proportional relationship between the voltage and the current across the sampling resistor R2, when the current value across the sampling resistor R2 is less than or equal to 0, the voltage value UOB1 across the sampling resistor R2 will also be less than or equal to 0, the reference voltage Uref will be set to 0 or slightly less than 0 by setting the reference voltage Uref, when the phase B current increases from a negative current to approximately 0 or equal to 0, the voltage value UOB1 across the sampling resistor R2 will also increase to approximately 0 or equal to 0, and when the voltage value UOB1 across the sampling resistor R2 increases to exceed the reference voltage Uref, the MOS transistor T6 turns off.

When the phase C current is less than or equal to 0, the voltage value on the sampling resistor R3 connected in series with the MOS transistor T9 is UOC1, and since there is a direct proportional relationship between the voltage and the current on the sampling resistor R3, when the current value on the sampling resistor R3 is less than or equal to 0, the voltage value UOC1 on the sampling resistor R3 will also be less than or equal to 0, the reference voltage Uref is set to 0 or slightly less than 0 by setting the reference voltage Uref, when the phase C current is increased from a negative current to close to 0 or equal to 0, the voltage value UOC1 on the sampling resistor R3 will also be increased to close to 0 or equal to 0, and when the voltage value UOC1 on the sampling resistor R3 is increased to cross the reference voltage Uref, the MOS transistor T9 is turned off.

Preferably, a reference voltage Uref is set, the reference voltage Uref being less than or equal to 0V;

collecting drain voltage UOA2 of an MOS tube T3, comparing drain voltage UOA of the MOS tube T3 with reference voltage Uref, turning on the MOS tube T3 when drain voltage UOA of the MOS tube T3 is smaller than the reference voltage Uref, and turning off the MOS tube T3 when drain voltage UOA of the MOS tube T3 is larger than or equal to the reference voltage Uref;

collecting a drain voltage UOB2 of the MOS tube T6, comparing the drain voltage UOB2 of the MOS tube T6 with a reference voltage Uref, switching on the MOS tube T6 when the drain voltage UOB2 of the MOS tube T6 is less than the reference voltage Uref, and switching off the MOS tube T6 when the drain voltage UOB2 of the MOS tube T6 is greater than or equal to the reference voltage Uref;

collecting a drain voltage UOC2 of the MOS tube T9, comparing the drain voltage UOC2 of the MOS tube T9 with a reference voltage Uref, switching on the MOS tube T9 when the drain voltage UOC2 of the MOS tube T9 is less than the reference voltage Uref, and switching off the MOS tube T9 when the drain voltage UOC2 of the MOS tube T9 is more than or equal to the reference voltage Uref.

Therefore, in order to achieve the purpose of switching on the MOS tube of the lower bridge arm of the corresponding phase when the current of each phase is less than or equal to 0, the scheme sets a reference voltage Uref, designs the reference voltage Uref to be less than or equal to 0V, simultaneously collects the drain voltage of the MOS tube of the lower bridge arm of each phase, and achieves the purpose of switching on the MOS tube of the lower bridge arm of the corresponding phase by comparing the voltage of the drain of the MOS tube with the reference voltage.

For the lower bridge arm of the phase A, the voltage formed by the current on the channel resistor of the MOS transistor T3, namely the drain voltage UOA2 of the MOS transistor T3, is used for detecting the current flowing through the MOS transistor T3 of the phase A, when the drain voltage UOA of the MOS transistor T3 is smaller than the reference voltage, the current flowing through the MOS transistor T3 is less than or equal to 0, the MOS transistor T3 is switched on, when the drain voltage UOA of the MOS transistor T3 is greater than or equal to the reference voltage, the current flowing through the MOS transistor T3 is greater than or equal to 0, and the MOS transistor T3 is switched off.

For the lower bridge arm of the phase B, the current flowing through the MOS transistor T6 of the phase B is detected by using the voltage formed by the current on the channel resistor of the MOS transistor T6, that is, the drain voltage UOBA2 of the MOS transistor T6, when the drain voltage UOB2 of the MOS transistor T6 is less than the reference voltage, it means that the current flowing through the MOS transistor T6 is less than or equal to 0, at this time, the MOS transistor T6 is turned on, and when the drain voltage UOB2 of the MOS transistor T6 is greater than or equal to the reference voltage, it means that the current flowing through the MOS transistor T6 is greater than or equal to 0, at this time, the MOS transistor T6 is turned off.

For the C-phase lower bridge arm, the voltage formed by the current on the channel resistor of the MOS transistor T9, that is, the drain voltage UOC2 of the MOS transistor T9, is used to detect the current flowing through the MOS transistor T9 in the C-phase, when the drain voltage UOC2 of the MOS transistor T9 is less than the reference voltage, it means that the current flowing through the MOS transistor T9 is less than or equal to 0, at this time, the MOS transistor T9 is turned on, and when the drain voltage UOC2 of the MOS transistor T9 is greater than or equal to the reference voltage, it means that the current flowing through the MOS transistor T9 is greater than or equal to 0, at this time, the MOS transistor T9 is turned off.

Preferably, a conduction angle ɵ is set, and the output voltage VBATT of the MOS switch type voltage regulator is adjusted by adjusting the conduction angle ɵ;

when the phase A of the magneto is positive half-wave alternating current voltage, before a conduction angle ɵ, the MOS transistor T1, the MOS transistor T2 and the MOS transistor T3 are all in a cut-off state, and the phase A alternating current voltage does not output energy to a load; when the current reaches a conduction angle ɵ, the MOS transistor T1 and the MOS transistor T2 are conducted, the MOS transistor T3 is cut off, and the A alternating current voltage starts to output energy to a load; when the A-phase positive half-wave alternating voltage value is lower than the output voltage VBATT of the output end MOS switch type voltage regulator, the MOS tube T1, the MOS tube T2 and the MOS tube T3 are all in a cut-off state, and the A-phase positive half-wave alternating voltage stops outputting energy to a load; when the phase A of the magnetor is negative half-wave alternating voltage, the MOS tube T3 is switched on, and the MOS tube T1 and the MOS tube T2 are switched off;

when the phase B of the magneto is positive half-wave alternating current voltage, before a conduction angle ɵ, the MOS transistor T4, the MOS transistor T5 and the MOS transistor T6 are all in a cut-off state, and the phase B alternating current voltage does not output energy to a load; when the current reaches a conduction angle ɵ, the MOS transistor T4 and the MOS transistor T5 are conducted, the MOS transistor T6 is cut off, and the B alternating-current voltage starts to output energy to a load; when the positive half-wave alternating voltage value of the B phase is lower than the output voltage VBATT of the output end MOS switch type voltage regulator, the MOS tube T4, the MOS tube T5 and the MOS tube T6 are all in a cut-off state, the B phase alternating voltage stops outputting energy to a load, when the B phase of the magneto is negative half-wave alternating voltage, the MOS tube T6 is conducted, and the MOS tube T4 and the MOS tube T5 are cut off;

when the C phase of the magnetor is positive half-wave alternating voltage, before the conduction angle ɵ, the MOS transistor T7, the MOS transistor T8 and the MOS transistor T9 are all in a cut-off state, and the C phase alternating voltage does not output energy to a load; when the current reaches a conduction angle ɵ, the MOS tube T7 and the MOS tube T8 are conducted, the MOS tube T9 is cut off, and the C alternating-current voltage starts to output energy to a load; when the positive half-wave alternating voltage value of the C phase is lower than the output voltage VBATT of the output end MOS switch type voltage regulator, the MOS tube T7, the MOS tube T8 and the MOS tube T9 are all in a cut-off state, the C phase alternating voltage stops outputting energy to a load, when the C phase of the magneto is negative half-wave alternating voltage, the MOS tube T9 is conducted, and the MOS tube T7 and the MOS tube T8 are cut off.

Thus, when the load of the voltage regulator changes, the output voltage of the voltage regulator needs to be adjusted to adapt to the change of the load, and the adjustment of the output voltage can be realized by adjusting the conduction angle ɵ, which is specifically described as follows:

when the phase A is in positive half-wave alternating voltage, before a conduction angle ɵ, the phase A alternating voltage does not output energy to the load, the MOS tube T1, the MOS tube T2 and the MOS tube T3 are all in a cut-off state, and the phase A alternating voltage stops outputting energy to the load at the moment, so that the loss of the voltage regulator is reduced; when the current reaches a conduction angle ɵ, the MOS tube T1 and the MOS tube T2 of the upper bridge arm of the phase A are conducted, and the alternating current voltage of the phase A is rectified and then outputs energy to a load, so that the range from the output energy of the phase A to the load is the conduction range of the conduction angle ɵ, and the output voltage can be adjusted by adjusting the conduction angle ɵ; meanwhile, when the phase A of the magneto is negative half-wave alternating voltage, the MOS tube T3 is conducted, and the MOS tube T1 and the MOS tube T2 are cut off; the purpose of reducing the loss of the voltage regulator can be further achieved.

Similarly, when the phase B is in the positive half-wave ac voltage, before the conduction angle ɵ, the phase B ac voltage does not output energy to the load, the MOS transistor T4, the MOS transistor T5, and the MOS transistor T6 are all in the cut-off state, and at this time, the phase B ac voltage stops outputting energy to the load, so that the loss of the voltage regulator is reduced; when the current reaches a conduction angle ɵ, the MOS transistor T4 and the MOS transistor T5 of the upper bridge arm of the B phase are conducted, and the B-phase alternating current voltage is rectified to output energy to a load, so that the range from the B-phase output energy to the load is the conduction range of the conduction angle ɵ, and the output voltage can be adjusted by adjusting the conduction angle ɵ; meanwhile, when the phase B of the magneto is negative half-wave alternating voltage, the MOS transistor T6 is switched on, and the MOS transistor T4 and the MOS transistor T5 are switched off; the purpose of reducing the loss of the voltage regulator can be further achieved.

When the C phase is in positive half-wave alternating voltage, before a conduction angle ɵ, the C phase alternating voltage does not output energy to the load, the MOS tube T7, the MOS tube T8 and the MOS tube T9 are all in a cut-off state, and the C phase alternating voltage stops outputting energy to the load, so that the loss of the voltage regulator is reduced; when the current reaches a conduction angle ɵ, the MOS tube T7 and the MOS tube T8 of the C-phase upper bridge arm are conducted, and the C-phase alternating current voltage is rectified and then outputs energy to a load, so that the range from the C-phase output energy to the load is the conduction range of the conduction angle ɵ, and the output voltage can be adjusted through adjustment of the conduction angle ɵ; meanwhile, when the phase C of the magneto is negative half-wave alternating voltage, the MOS transistor T9 is switched on, and the MOS transistor T7 and the MOS transistor T8 are switched off; the purpose of reducing the loss of the voltage regulator can be further achieved.

Preferably, when the phase a of the magneto is positive half-wave alternating voltage and the phase a does not generate alternating voltage protection, when the alternating voltage reaches a conduction angle ɵ, the MOS transistor T1 is turned on first, and the MOS transistor T2 is turned on after a delay of 100ns to 50us, and the positive half-wave alternating voltage of the phase a is rectified by the MOS transistor T1 and the MOS transistor T2 and then output to the load;

when the phase B of the magneto is positive half-wave alternating voltage and the phase B does not generate alternating current overvoltage protection, when the phase B reaches a conduction angle ɵ, the MOS transistor T4 is firstly switched on, the MOS transistor T5 is switched on after the time delay of 100ns to 50us, and the positive half-wave alternating voltage of the phase B is rectified by the MOS transistor T4 and the MOS transistor T5 and then output to a load;

when the phase C of the magneto is positive half-wave alternating voltage and the phase C does not generate alternating current overvoltage protection, when the phase C reaches a conduction angle ɵ, the MOS transistor T7 is firstly switched on, the MOS transistor T8 is switched on after the time delay of 100ns to 50us, and the positive half-wave alternating voltage of the phase C is rectified by the MOS transistor T7 and the MOS transistor T8 and then is output to a load.

Therefore, when the positive half wave of the phase A reaches the conduction angle ɵ, the MOS transistor T1 is firstly turned on, and then the MOS transistor T2 is turned on after a period of time delay, so that the problem that the bridge arm is directly turned on by the phase A can be avoided.

Similarly, when the positive half wave of the phase B reaches the conduction angle ɵ, the MOS transistor T4 is turned on first, and then the MOS transistor T5 is turned on after a time delay, so that the problem that the bridge arm is directly turned on by the phase B can be avoided.

When the positive half wave of the C phase reaches the conduction angle ɵ, the MOS transistor T7 is turned on first, and then the MOS transistor T8 is turned on after a period of time delay, so that the problem that the bridge arm is directly turned on due to the C phase can be avoided.

Preferably, phase overvoltage protection is set, and when the alternating current voltage of each phase exceeds a set value, the MOS tube of the lower bridge arm of the phase is conducted;

when the phase A of the magneto is positive half-wave alternating voltage and the phase A alternating voltage exceeds a set value and generates phase overvoltage protection, an MOS tube T3 is switched on, when the phase A reaches a conduction angle ɵ, an MOS tube T1 is switched on, the MOS tube T3 is switched off after time delay of 100ns to 50us, an MOS tube T2 is switched on after time delay of 100ns to 50us, and the phase A positive half-wave alternating voltage is rectified by the MOS tube T1 and the MOS tube T2 and then output to a load;

when the phase B of the magneto is positive half-wave alternating voltage and the phase B alternating voltage exceeds a set value and generates phase overvoltage protection, the MOS transistor T6 is switched on, when the phase B reaches a conduction angle ɵ, the MOS transistor T4 is switched on, the MOS transistor T6 is switched off after the time is delayed from 100ns to 50us, the MOS transistor T5 is switched on after the time is delayed from 100ns to 50us, and the positive half-wave alternating voltage of the phase B is rectified by the MOS transistor T4 and the MOS transistor T5 and then is output to a load;

when the phase C of the magneto is positive half-wave alternating voltage and the phase C alternating voltage exceeds a set value and generates phase overvoltage protection, the MOS transistor T9 is switched on, when the phase C reaches a conduction angle ɵ, the MOS transistor T7 is switched on, the MOS transistor T9 is switched off after time delay of 100ns to 50us, the MOS transistor T8 is switched on after time delay of 100ns to 50us, and the positive half-wave alternating voltage of the phase C is rectified by the MOS transistor T7 and the MOS transistor T8 and then output to a load.

Therefore, when the phase A is positive half-wave and the alternating voltage exceeds the set value and generates phase overvoltage protection, the MOS transistor T3 is conducted at the moment, the phase A dangerous voltage is discharged, when the phase A reaches the conduction angle ɵ, the MOS transistor T1 is firstly turned on, the MOS transistor T3 is turned off after a time delay, the purpose is to establish a current path after the MOS transistor T3 is turned off in advance, the current on the MOS transistor T3 can be directly switched to the MOS transistor T1 to be output after the MOS transistor T3 is turned off, and the MOS transistor T2 is turned on after the MOS transistor T3 is turned off and a time delay, so that the problem of bridge arm through caused by the fact that the MOS transistor T2 is turned on too early is avoided.

Similarly, when the phase B is a positive half-wave and the ac voltage exceeds the set value and phase overvoltage protection is generated, the MOS transistor T6 is turned on to release the dangerous voltage of the phase B, and when the conduction angle ɵ is reached, the MOS transistor T4 is turned on first and the MOS transistor T6 is turned off after a time delay, so as to establish a current path after the MOS transistor T6 is turned off in advance, so that the current on the MOS transistor T6 can be directly switched to the MOS transistor T4 for output after the MOS transistor T6 is turned off, and the MOS transistor T5 is turned on after the MOS transistor T6 is turned off and a time delay, so as to avoid the problem of bridge arm through caused by the early turning on of the MOS transistor T5.

When the phase C is positive half-wave and the alternating voltage exceeds the set value and generates phase overvoltage protection, the MOS transistor T9 is conducted at the moment, the C-phase dangerous voltage is discharged, when the phase C reaches a conduction angle ɵ, the MOS transistor T7 is firstly turned on, the MOS transistor T9 is turned off after a time delay, the purpose is to establish a current path after the MOS transistor T9 is turned off in advance, so that the current on the MOS transistor T9 can be directly switched to the MOS transistor T7 to be output after the MOS transistor T9 is turned off, and the MOS transistor T8 is turned on after the MOS transistor T9 is turned off and a time delay, so that the problem of bridge arm through caused by the fact that the MOS transistor T8 is turned on too early is solved.

Preferably, when the rectification current is 0 after the A-phase rectification state of the magneto is finished, the MOS transistor T2 is firstly turned off, and the MOS transistor T1 is turned off and the MOS transistor T3 is turned on after the delay time is more than 100 ns;

when the rectification current of the magnetor in the B-phase rectification state is 0, the MOS transistor T5 is firstly turned off, and the MOS transistor T4 is turned off and the MOS transistor T6 is turned on after the delay time is more than 100 ns;

when the C-phase rectification state of the magneto finishes the rectification current of 0, the MOS transistor T8 is firstly turned off, and the MOS transistor T7 is turned off and the MOS transistor T9 is turned on after the delay time is more than 100 ns.

Therefore, when the rectification current of the A phase of the magneto is 0 after the rectification state of the A phase, namely the A phase is separated from the rectification state, the MOS tube T2 is firstly turned off, and the MOS tube T1 is turned off and the MOS tube T3 is turned on after the delay time is more than 100ns, so that the problem that a load generated when the A phase voltage is smaller than the output voltage flows back to the voltage regulator is solved.

Similarly, when the rectification current of the magnetic motor B phase is finished to be 0, namely the B phase is separated from the rectification state, the MOS transistor T5 is firstly turned off, and the MOS transistor T4 is turned off and the MOS transistor T6 is turned on after the delay time is longer than 100ns, so that the problem that a load generated when the B phase voltage is smaller than the output voltage flows back to the voltage regulator is solved.

When the C-phase rectification state of the magneto finishes that the rectification current is 0, namely the C-phase is separated from the rectification state, the MOS tube T8 is firstly turned off, and the MOS tube T7 is turned off and the MOS tube T9 is turned on after the delay time is more than 100ns, so that the problem that a load generated when the C-phase voltage is smaller than the output voltage flows back to the voltage regulator is solved.

Preferably, the MOS switch-type voltage regulator stabilizes the output voltage VBATT of the MOS switch-type voltage regulator at a preset voltage value by using a BOOST rectification and conduction angle rectification method, and the MOS switch-type voltage regulator sets a rotation speed corresponding to an intersection point of an output current curve of the BOOST rectification method and an output current curve of the conduction angle rectification method as a first rotation speed;

when the rotating speed of the magneto is less than or equal to a first rotating speed, the MOS switch type voltage regulator adopts a mixed voltage regulation mode of BOOST boosting rectification and conduction angle rectification;

when the rotation speed of the magneto is greater than the first rotation speed, the MOS switch type voltage regulator adopts a conduction angle rectification mode.

In this way, the rotating speed corresponding to the intersection point of the output current curve adopting the BOOST rectification method and the output current curve adopting the conduction angle rectification method is measured by the BOOST rectification and the conduction angle rectification at the maximum design load and different rotating speeds before delivery.

When the rotating speed of the magneto is lower than the first rotating speed, the current output by the BOOST rectification is larger than the current output by the conduction angle rectification, and the output voltage of the voltage regulator can be stabilized at a preset voltage value by adopting a mode of mixing the BOOST rectification and the conduction angle rectification for voltage regulation; when the rotation speed of the magneto is higher than the first rotation speed, the output current of BOOST rectification is lower than the output current of conduction angle rectification, and the purpose of stabilizing the output voltage at the preset voltage value is achieved by directly adopting the conduction angle rectification mode through adjusting the conduction angle ɵ.

Preferably, when the rotation speed of the magneto is less than or equal to the first rotation speed, when the load is increased to enable the output voltage VBATT of the MOS switch type voltage regulator to be increased to completely cover each phase of alternating current positive half-wave at the conduction angle ɵ and still be less than the preset voltage value, the MOS switch type voltage regulator is switched to a BOOST BOOST rectification method by a conduction angle rectification method; when the load is reduced, the PWM duty ratio of the MOS switch type voltage regulator adopting BOOST boosting rectification is reduced, and the MOS switch type voltage regulator is switched to a conduction angle rectification method from the BOOST boosting rectification method;

when the rotation speed of the magneto is higher than the first rotation speed, when the output voltage VBATT of the MOS switch type voltage regulator is reduced to be smaller than the preset voltage value, the width of a conduction angle ɵ is increased, the conduction time of each phase of MOS tube is increased, and the output voltage VBATT of the MOS switch type voltage regulator is increased and stabilized at the preset voltage value; when the output voltage VBATT of the MOS switch type voltage regulator is increased to be larger than the preset voltage value, the width of the conduction angle ɵ is reduced, the conduction time of each phase of MOS tube is reduced, and the output voltage VBATT of the MOS switch type voltage regulator is reduced and stabilized at the preset voltage value.

Thus, if the conduction angle rectification method is adopted to increase the width of the conduction angle ɵ until the width of the conduction angle 5363 is completely covered and the positive half-wave of each phase of alternating current is still smaller than the preset voltage value, the conduction angle rectification method cannot further increase the output voltage to enable the output voltage to reach the preset voltage value, and at the moment, because the current output by the BOOST rectification method of the BOOST rectifier is larger than the current output by the BOOST rectification method of the conduction angle when the rotating speed of the magneto is smaller than the first rotating speed, the method of switching the conduction angle rectification method to the BOOST rectification method of the BOOST rectifier can be adopted to increase the output voltage to enable the output voltage to be stabilized at the preset voltage value, and therefore the purpose that the output voltage is stabilized at the preset voltage value is achieved; when the load is reduced so that the PWM duty ratio adopting the BOOST rectification method is reduced, the MOS switch type voltage regulator is switched to a conduction angle rectification method from the BOOST rectification method at the moment; if the conduction angle rectification mode cannot control the output voltage of the voltage regulator at the preset voltage value, the control mode enters the BOOST rectification mode again, and therefore the purpose of stabilizing the output voltage at the preset voltage value all the time is achieved by carrying out BOOST rectification and conduction angle rectification mixed voltage regulation within the range smaller than the first rotating speed.

When the rotation speed of the magneto is larger than the first rotation speed, the output current of BOOST rectification of the BOOST converter is smaller than the output current during conduction angle rectification, at the moment, the conduction angle rectification mode is directly adopted, the width of the conduction angle ɵ is adjusted, the wider the width of the conduction angle ɵ is, the longer the opening time of the corresponding MOS tube is, the larger the output voltage is, the smaller the width of the conduction angle ɵ is, the shorter the opening time of the corresponding MOS tube is, the smaller the output voltage is, and therefore the purpose of stabilizing the output voltage at the preset voltage value is achieved through adjusting the width of the conduction angle ɵ.

Drawings

Fig. 1 is a structural diagram of a short-circuit voltage regulator formed by 6 MOS transistors in the prior art;

fig. 2 is a structural diagram of a switching regulator employed in the control method of the MOS switching regulator for a motorcycle of the present invention;

fig. 3 is a structural diagram of a control method of an MOS switch-type voltage regulator for a motorcycle according to the first embodiment of the present invention, in which a sampling resistor is connected in series to control a lower bridge arm MOS transistor to be turned on in a negative half-wave;

FIG. 4 is a circuit diagram comparing the sampling resistor with the reference voltage in FIG. 3;

FIG. 5 is a schematic diagram of the operating principle of the switching regulator in the control method of the MOS switching regulator for motorcycles according to the present invention;

fig. 6 is a timing diagram of the switch of phase a in the first embodiment of the control method of the MOS switch mode voltage regulator for a motorcycle of the present invention;

fig. 7 is a timing diagram of the switching of phase B in the first embodiment of the control method of the MOS switch mode voltage regulator for motorcycles according to the present invention;

fig. 8 is a timing diagram of the switching of the C phase in the first embodiment of the control method of the MOS switch mode voltage regulator for motorcycles according to the present invention;

fig. 9 is a graph of an output current curve when a BOOST rectification method and a conduction angle rectification method are adopted in the first embodiment of the control method of the MOS switch-type voltage regulator for a motorcycle according to the present invention;

fig. 10 is a schematic switching diagram of the MOS switch type voltage regulator for motorcycle according to the first embodiment of the control method of the present invention, when BOOST rectification and conduction angle rectification are used for mixed voltage regulation;

fig. 11 is a structural diagram of the control method of the MOS switch type voltage regulator for a motorcycle according to the second embodiment of the present invention, in which the drain voltages of the MOS transistors of the respective phases are collected to control the conduction of the MOS transistor of the lower bridge arm in the negative half-wave;

FIG. 12 is a circuit diagram of the comparison between the drain voltage and the reference voltage of the MOS transistor of FIG. 11.

Detailed Description

The invention will be further explained with reference to the drawings and the embodiments.

The main circuit adopted in the control method of the MOS switch type voltage regulator for the motorcycle is shown in the attached figure 2, the main circuit comprises an upper bridge arm and a lower bridge arm, the upper bridge arm comprises an MOS tube T1, an MOS tube T2, an MOS tube T4, an MOS tube T5, an MOS tube T7 and an MOS tube T8, and the lower bridge arm comprises an MOS tube T3, an MOS tube T6 and an MOS tube T9; the source electrode of the MOS tube T1 is connected with a load, the drain electrode of the MOS tube T1 is connected with the drain electrode of the MOS tube T2, the source electrode of the MOS tube T2 is connected with the phase A output end of the magneto, the source electrode of the MOS tube T3 is grounded, and the drain electrode of the MOS tube T3 is connected with the phase A output end of the magneto; the source electrode of the MOS tube T4 is connected with the load, the drain electrode of the MOS tube T4 is connected with the drain electrode of the MOS tube T5, the source electrode of the MOS tube T5 is connected with the phase B output end of the magneto, the source electrode of the MOS tube T6 is grounded, and the drain electrode of the MOS tube T6 is connected with the phase B output end of the magneto; the source electrode of the MOS tube T7 is connected with the load, the drain electrode of the MOS tube T7 is connected with the drain electrode of the MOS tube T8, the source electrode of the MOS tube T8 is connected with the C-phase output end of the magneto, the source electrode of the MOS tube T9 is grounded, and the drain electrode of the MOS tube T9 is connected with the C-phase output end of the magneto.

The invention relates to a control method of a MOS switch type voltage regulator for a motorcycle, which comprises the steps of turning off an MOS tube T1 and an MOS tube T2 and turning on an MOS tube T3 when the alternating current voltage of a magneto A is negative half-wave, turning off the MOS tube T3 and turning on or turning off the MOS tube T1 and the MOS tube T2 when the alternating current voltage of the magneto A is positive half-wave;

when the alternating current voltage of the magnetor is a negative half wave, the MOS transistor T7 and the MOS transistor T8 are turned off, and the MOS transistor T9 is turned on, and when the alternating current voltage of the magnetor is a positive half wave, the MOS transistor T9 is turned off, and the MOS transistor T7 and the MOS transistor T8 are turned on or off.

Similarly, when the ac voltage of the B-phase of the magneto is a negative half-wave, that is, the phase current of the B-phase of the magneto is less than or equal to 0, the MOS transistor T6 on the B-phase lower bridge arm needs to be turned on to reduce the loss of the voltage regulator at this time, and when the phase negative current of the B-phase of the magneto is equal to 0 or before being equal to 0, the MOS transistor T6 on the B-phase lower bridge arm needs to be turned off at this time, so as to achieve the purpose of the on-off control.

The first embodiment is as follows:

as shown in fig. 3 and 4, in the present embodiment, a reference voltage Uref is set;

a sampling resistor R2 is connected in series between the source electrode of the MOS transistor T6 and the ground, and the on or off of the MOS transistor T6 is controlled by comparing the relation between a voltage value UOB1 on the sampling resistor R2 and a reference voltage Uref;

When the phase current of A is less than or equal to 0, the voltage value on the sampling resistor R1 connected with the MOS transistor T3 in series is UOA, because the voltage and the current on the sampling resistor R1 are in a proportional relation, when the current value on the sampling resistor R1 is less than or equal to 0, the voltage value UOA on the sampling resistor R1 is also less than or equal to 0, the reference voltage Uref is set to 0 or slightly less than 0 by setting the reference voltage Uref, when the phase current of A is increased to be close to 0 or equal to 0 from the negative current, the voltage value UOA on the sampling resistor R1 is also increased to be close to 0 or equal to 0, and when the voltage value UOA on the sampling resistor R1 is increased to exceed the reference voltage Uref, the MOS transistor T3 is turned off. Specifically, a comparator U1 is provided to compare a voltage value UOA on a sampling resistor R1 with a reference voltage Uref, where the reference voltage Uref is connected to a positive input terminal of the comparator U1, a voltage value UOA on the sampling resistor R1 is connected to a negative input terminal of the comparator U1, when a voltage value UOA on the sampling resistor R1 is less than or equal to the reference voltage Uref, the comparator U1 outputs a signal to turn on the MOS transistor T3, and when a voltage value UOA on the sampling resistor R1 is greater than or equal to the reference voltage Uref, the comparator U1 outputs a flip signal to turn off the MOS transistor T3.

Similarly, when the phase B current is less than or equal to 0, the voltage value across the sampling resistor R2 connected in series with the MOS transistor T6 is UOB1, and since there is a direct proportional relationship between the voltage and the current across the sampling resistor R2, when the current value across the sampling resistor R2 is less than or equal to 0, the voltage value UOB1 across the sampling resistor R2 will also be less than or equal to 0, the reference voltage Uref will be set to 0 or slightly less than 0 by setting the reference voltage Uref, when the phase B current increases from a negative current to approximately 0 or equal to 0, the voltage value UOB1 across the sampling resistor R2 will also increase to approximately 0 or equal to 0, and when the voltage value UOB1 across the sampling resistor R2 increases to exceed the reference voltage Uref, the MOS transistor T6 turns off. Specifically, the comparator U2 is arranged to compare the voltage value UOB1 across the sampling resistor R2 with the reference voltage Uref, wherein the reference voltage Uref is connected to the positive input terminal of the comparator U2, the voltage value UOB1 across the sampling resistor R2 is connected to the negative input terminal of the comparator U2, when the voltage value UOB1 across the sampling resistor R2 is less than or equal to the reference voltage Uref, the comparator U2 outputs a signal to turn on the MOS transistor T6, and when the voltage value UOB1 across the sampling resistor R2 is greater than or equal to the reference voltage Uref, the comparator U2 outputs a toggle signal to turn off the MOS transistor T6.

When the phase current of C is less than or equal to 0, the voltage value on the sampling resistor R3 connected with the MOS transistor T9 in series is UOC1, because the voltage and the current on the sampling resistor R3 are in a direct proportional relationship, when the current value on the sampling resistor R3 is less than or equal to 0, the voltage value UOC1 on the sampling resistor R3 is also less than or equal to 0, the reference voltage Uref is set to be 0 or slightly less than 0 by setting the reference voltage Uref, when the phase current of C is increased to be close to 0 or equal to 0 from a negative current, the voltage value UOC1 on the sampling resistor R3 is also increased to be close to 0 or equal to 0, and when the voltage value UOC1 on the sampling resistor R3 is increased to exceed the reference voltage Uref, the MOS transistor T9 is turned off. Specifically, the comparator U3 is arranged to compare the voltage value UOC1 of the sampling resistor R3 with the reference voltage Uref, wherein the reference voltage Uref is connected to a forward input terminal of the comparator U3, the voltage value UOC1 of the sampling resistor R3 is connected to a reverse input terminal of the comparator U3, when the voltage value UOC1 of the sampling resistor R3 is less than or equal to the reference voltage Uref, the comparator U3 outputs a signal to turn on the MOS transistor T9, and when the voltage value UOC1 of the sampling resistor R3 is greater than or equal to the reference voltage Uref, the comparator U3 outputs a flipping signal to turn off the MOS transistor T9.

As shown in fig. 5, in the present embodiment, a conduction angle ɵ is set, and the output voltage VBATT of the MOS switch regulator is adjusted by adjusting a conduction angle ɵ;

when the phase A of the magnetor is positive half-wave alternating voltage, before a conduction angle ɵ, the MOS transistor T1, the MOS transistor T2 and the MOS transistor T3 are all in a cut-off state, and the phase A alternating voltage does not output energy to a load; when the current reaches a conduction angle ɵ, the MOS tube T1 and the MOS tube T2 are conducted, the MOS tube T3 is cut off, and the A alternating current voltage starts to output energy to a load; when the A-phase positive half-wave alternating voltage value is lower than the output voltage VBATT of the output end MOS switch type voltage regulator, the MOS tube T1, the MOS tube T2 and the MOS tube T3 are all in a cut-off state, and the A-phase positive half-wave alternating voltage stops outputting energy to a load; when the phase A of the magneto is negative half-wave alternating voltage, the MOS tube T3 is conducted, and the MOS tube T1 and the MOS tube T2 are cut off;

when the C phase of the magnetor is positive half-wave alternating voltage, before the conduction angle ɵ, the MOS transistor T7, the MOS transistor T8 and the MOS transistor T9 are all in a cut-off state, and the C phase alternating voltage does not output energy to a load; when the current reaches a conduction angle ɵ, the MOS tube T7 and the MOS tube T8 are conducted, the MOS tube T9 is cut off, and the C alternating-current voltage starts to output energy to a load; when the positive half-wave alternating voltage value of the C phase is lower than the output voltage VBATT of the output end MOS switch type voltage regulator, the MOS tube T7, the MOS tube T8 and the MOS tube T9 are all in a cut-off state, the C phase alternating voltage stops outputting energy to a load, when the C phase of the magnetor is negative half-wave alternating voltage, the MOS tube T9 is conducted, and the MOS tube T7 and the MOS tube T8 are cut off.

when the A phase is in positive half-wave alternating voltage, before a conduction angle ɵ, the A phase alternating voltage does not output energy to a load, the MOS tube T1, the MOS tube T2 and the MOS tube T3 are all in a cut-off state, and the A phase alternating voltage stops outputting energy to the load, so that the loss of the voltage regulator is reduced; when the current reaches a conduction angle ɵ, the MOS tube T1 and the MOS tube T2 of the upper bridge arm of the phase A are conducted, the alternating-current voltage of the phase A is rectified and then outputs energy to a load, therefore, the range from the output energy of the phase A to the load is the conduction range of the conduction angle ɵ, and the adjustment of the output voltage can be realized through the adjustment of the conduction angle ɵ; meanwhile, when the A-phase positive half-wave alternating voltage value is lower than the output voltage VBATT of the output end MOS switch type voltage regulator, the MOS tube T1, the MOS tube T2 and the MOS tube T3 are all in a cut-off state, the A-phase alternating voltage stops outputting energy to a load, and therefore loss of the voltage regulator is reduced, and meanwhile, when the A-phase of the magneto is negative half-wave alternating voltage, the MOS tube T3 is conducted, and the MOS tube T1 and the MOS tube T2 are cut off; the purpose of reducing the loss of the voltage regulator can be further achieved.

Similarly, when the phase B is in the positive half-wave ac voltage, before the conduction angle ɵ, the phase B ac voltage does not output energy to the load, the MOS transistor T4, the MOS transistor T5, and the MOS transistor T6 are all in the cut-off state, and at this time, the phase B ac voltage stops outputting energy to the load, so that the loss of the voltage regulator is reduced; when the current reaches a conduction angle ɵ, the MOS tube T4 and the MOS tube T5 of the upper bridge arm of the B phase are conducted, and the B-phase alternating current voltage is rectified and then outputs energy to a load, so that the range from the B-phase output energy to the load is the conduction range of the conduction angle ɵ, and the output voltage can be adjusted through adjustment of the conduction angle ɵ; meanwhile, when the positive half-wave alternating voltage value of the B phase is lower than the output voltage VBATT of the output end MOS switch type voltage regulator, the MOS tube T4, the MOS tube T5 and the MOS tube T6 are all in a cut-off state, the B phase alternating voltage stops outputting energy to a load, and therefore loss of the voltage regulator is reduced, and meanwhile, when the B phase of the magneto is negative half-wave alternating voltage, the MOS tube T6 is conducted, and the MOS tube T4 and the MOS tube T5 are cut off; the purpose of reducing the loss of the voltage regulator can be further achieved.

When the C phase is in positive half-wave alternating voltage, before a conduction angle ɵ, the C phase alternating voltage does not output energy to the load, the MOS tube T7, the MOS tube T8 and the MOS tube T9 are all in a cut-off state, and the C phase alternating voltage stops outputting energy to the load, so that the loss of the voltage regulator is reduced; when the current reaches a conduction angle ɵ, the MOS tube T7 and the MOS tube T8 of the C-phase upper bridge arm are conducted, and the C-phase alternating current voltage is rectified and then outputs energy to a load, so that the range from the C-phase output energy to the load is the conduction range of the conduction angle ɵ, and the output voltage can be adjusted through adjustment of the conduction angle ɵ; meanwhile, when the positive half-wave alternating voltage value of the C phase is lower than the output voltage VBATT of the output end MOS switch type voltage regulator, the MOS tube T7, the MOS tube T8 and the MOS tube T9 are all in a cut-off state, the C phase alternating voltage stops outputting energy to a load, and therefore loss of the voltage regulator is reduced, meanwhile, when the C phase of the magneto is negative half-wave alternating voltage, the MOS tube T9 is conducted, and the MOS tube T7 and the MOS tube T8 are cut off; the purpose of reducing the loss of the voltage regulator can be further achieved.

As shown in fig. 6, in this embodiment, when the phase a of the magneto is positive half-wave ac voltage and the phase a does not generate ac overvoltage protection, when the phase a reaches the conduction angle ɵ, the MOS transistor T1 is turned on first, and the MOS transistor T2 is turned on after a delay of 100ns to 50us, and the positive half-wave ac voltage of the phase a is rectified by the MOS transistor T1 and the MOS transistor T2 and then output to the load;

as shown in fig. 7, when the phase B of the magneto is positive half-wave ac voltage and the phase B does not generate ac overvoltage protection, when the phase B reaches a conduction angle ɵ, the MOS transistor T4 is turned on first, and the MOS transistor T5 is turned on after a delay of 100ns to 50us, and the positive half-wave ac voltage of the phase B is rectified by the MOS transistor T4 and the MOS transistor T5 and then output to the load;

as shown in fig. 8, when the C phase of the magneto is positive half-wave ac voltage and the C phase does not generate ac overvoltage protection, when the ac voltage reaches the conduction angle ɵ, the MOS transistor T7 is turned on first, and the MOS transistor T8 is turned on after a delay of 100ns to 50us, and the C phase positive half-wave ac voltage is rectified by the MOS transistor T7 and the MOS transistor T8 and then output to the load.

As shown in fig. 6, in this embodiment, phase overvoltage protection is provided, and when the ac voltage of each phase exceeds a set value, the MOS transistor of the lower bridge arm of the phase is turned on;

when the A phase of the magneto is positive half-wave alternating voltage and the A phase alternating voltage exceeds a set value and phase overvoltage protection is generated, the MOS tube T3 is switched on, when the A phase of the magneto reaches a conduction angle ɵ, the MOS tube T1 is switched on, the MOS tube T3 is switched off after the time is delayed from 100ns to 50us, the MOS tube T2 is switched on after the time is delayed from 100ns to 50us, and the A phase positive half-wave alternating voltage is rectified by the MOS tube T1 and the MOS tube T2 and then is output to a load;

as shown in fig. 7, when the phase B of the magneto is positive half-wave ac voltage and the phase B ac voltage exceeds a predetermined value and phase overvoltage protection is generated, the MOS transistor T6 is turned on, when the phase B reaches a conduction angle ɵ, the MOS transistor T4 is turned on, the MOS transistor T6 is turned off after a delay of 100ns to 50us, the MOS transistor T5 is turned on after a delay of 100ns to 50us, and the positive half-wave ac voltage of the phase B is rectified by the MOS transistor T4 and the MOS transistor T5 and then output to the load;

as shown in fig. 8, when the phase C of the magneto is a positive half-wave ac voltage and the phase C ac voltage exceeds a predetermined value and phase overvoltage protection is generated, the MOS transistor T9 is turned on, when the phase C reaches a conduction angle ɵ, the MOS transistor T7 is turned on, the MOS transistor T9 is turned off after a delay of 100ns to 50us, the MOS transistor T8 is turned on after a delay of 100ns to 50us, and the positive half-wave ac voltage of the phase C is rectified by the MOS transistor T7 and the MOS transistor T8 and then output to the load.

Therefore, when the phase A is positive half-wave and the alternating voltage exceeds the set value and phase overvoltage protection is generated, the MOS transistor T3 is conducted at the moment, the dangerous voltage of the phase A is discharged, when the dangerous voltage reaches a conduction angle ɵ, the MOS transistor T1 is firstly conducted, the MOS transistor T3 is turned off after a period of time delay, the purpose is to establish a current path after the MOS transistor T3 is turned off in advance, so that the current on the MOS transistor T3 can be directly switched to the MOS transistor T1 to be output after the MOS transistor T3 is turned off, and the MOS transistor T2 is turned on after a period of time delay after the MOS transistor T3 is turned off, so that the problem of bridge arm through caused by early turning on of the MOS transistor T2 is avoided.

As shown in fig. 6, in this embodiment, when the rectification current is 0 after the phase a rectification state of the magneto is finished, the MOS transistor T2 is turned off first, and the MOS transistor T1 is turned off and the MOS transistor T3 is turned on after the delay time is greater than 100 ns;

as shown in fig. 7, when the commutation current is 0 after the commutation state of the phase B of the magneto, the MOS transistor T5 is turned off first, and the MOS transistor T4 is turned off and the MOS transistor T6 is turned on after the delay time is greater than 100 ns;

as shown in fig. 8, when the C-phase rectification state of the magneto finishes the rectification current of 0, the MOS transistor T8 is turned off first, and after the delay time is greater than 100ns, the MOS transistor T7 is turned off and the MOS transistor T9 is turned on.

Therefore, when the rectification current of the A phase of the magneto is 0 after the rectification state of the A phase is finished, namely the A phase is separated from the rectification state, the MOS transistor T2 is firstly turned off, and the MOS transistor T1 is turned off and the MOS transistor T3 is turned on after the delay time is longer than 100ns, so that the problem that a load generated when the A phase voltage is smaller than the output voltage flows back to the voltage regulator is solved.

In this embodiment, the MOS switch-type voltage regulator stabilizes the output voltage VBATT of the MOS switch-type voltage regulator at a preset voltage value by using a BOOST rectification and conduction angle rectification method, and the MOS switch-type voltage regulator sets a first rotation speed at a rotation speed corresponding to an intersection of an output current curve (such as an I2 curve in fig. 9) of the BOOST rectification method and an output current curve (such as an I1 curve in fig. 9) of the conduction angle rectification method (i.e., n3 in fig. 9, where, for a specific magneto, the intersection n3 of the I1/I2 curve is measured at a maximum design load and at different rotation speeds by the BOOST rectification and the three-phase full-wave rectification before leaving a factory);

when the rotation speed of the magneto is less than or equal to the first rotation speed, the MOS switch type voltage regulator adopts a mixed voltage regulation mode of BOOST rectification and conduction angle rectification (as shown in figure 10);

when the rotation speed of the magneto is larger than the first rotation speed, the MOS switch type voltage regulator adopts a conduction angle rectification mode.

When the rotating speed of the magneto is less than the first rotating speed, the current output by the BOOST rectification is greater than the current output by the conduction angle rectification, and the output voltage of the voltage regulator can be stabilized at a preset voltage value by adopting a mixed voltage regulation mode of the BOOST rectification and the conduction angle rectification; when the rotation speed of the magneto is higher than the first rotation speed, the output current of BOOST rectification is lower than the output current of conduction angle rectification, and the purpose of stabilizing the output voltage at the preset voltage value is achieved by directly adopting the conduction angle rectification mode through adjusting the conduction angle ɵ.

In this embodiment, when the rotation speed of the magneto is less than or equal to the first rotation speed, when the load is increased so that the output voltage VBATT of the MOS switch-type voltage regulator is increased to completely cover each phase of the ac positive half-wave at the conduction angle ɵ and still less than the preset voltage value, the MOS switch-type voltage regulator is switched from the conduction angle rectification method to the BOOST rectification method; when the load is reduced, the PWM duty ratio of the MOS switch type voltage regulator adopting BOOST boosting rectification is reduced, and the MOS switch type voltage regulator is switched to a conduction angle rectification method from the BOOST boosting rectification method;

when the rotating speed of the magneto is greater than a first rotating speed and the output voltage VBATT of the MOS switch type voltage regulator is reduced to be smaller than a preset voltage value, the width of a conduction angle ɵ is increased, and the conduction time of each phase of MOS tube is increased, so that the output voltage VBATT of the MOS switch type voltage regulator is increased and stabilized at the preset voltage value; when the output voltage VBATT of the MOS switch type voltage regulator is increased to be larger than the preset voltage value, the width of the conduction angle ɵ is reduced, and the conduction time of each phase of MOS tube is reduced, so that the output voltage VBATT of the MOS switch type voltage regulator is reduced and stabilized at the preset voltage value.

When the rotation speed of the magneto is larger than the first rotation speed, the current output by BOOST rectification of the BOOST is smaller than the current output during conduction angle rectification, at the moment, the conduction angle rectification mode is directly adopted to adjust the width of the conduction angle ɵ, the wider the width of the conduction angle ɵ is, the longer the opening time of the corresponding MOS tube is, the larger the output voltage is, the smaller the width of the conduction angle ɵ is, the shorter the opening time of the corresponding MOS tube is, the smaller the output voltage is, and therefore the purpose of stabilizing the output voltage at the preset voltage value is achieved through adjusting the width of the conduction angle ɵ.

Example two: the difference from the first embodiment is that,

as shown in fig. 11 and 12, in the present embodiment, the reference voltage Uref is set, the reference voltage Uref being 0V or less;

For the phase-A lower bridge arm, the current flowing through the MOS transistor T3 is detected by using the voltage formed by the current on the channel resistor of the MOS transistor T3, namely the drain voltage UOA2 of the MOS transistor T3, when the drain voltage UOA of the MOS transistor T3 is less than the reference voltage, the current flowing through the MOS transistor T3 is less than or equal to 0, the MOS transistor T3 is turned on, when the drain voltage UOA of the MOS transistor T3 is greater than or equal to the reference voltage, the current flowing through the MOS transistor T3 is greater than or equal to 0, and the MOS transistor T3 is turned off. Specifically, a comparator U4 is provided to compare a drain voltage UOA of the MOS transistor T3 with a reference voltage Uref, where the reference voltage Uref is connected to a positive input terminal of the comparator U4, a drain voltage UOA of the MOS transistor T3 is connected to a negative input terminal of the comparator U4 through a resistor R4, when a drain voltage UOA of the MOS transistor T3 is less than or equal to the reference voltage Uref, the comparator U4 outputs a signal to turn on the MOS transistor T3, and when a drain voltage UOA of the MOS transistor T3 is greater than or equal to the reference voltage Uref, the comparator U4 outputs a signal to turn over to turn off the MOS transistor T3.

For the lower bridge arm of the phase B, the current flowing through the MOS transistor T6 of the phase B is detected by using the voltage formed by the current on the channel resistor of the MOS transistor T6, that is, the drain voltage UOBA2 of the MOS transistor T6, when the drain voltage UOB2 of the MOS transistor T6 is less than the reference voltage, it means that the current flowing through the MOS transistor T6 is less than or equal to 0, at this time, the MOS transistor T6 is turned on, and when the drain voltage UOB2 of the MOS transistor T6 is greater than or equal to the reference voltage, it means that the current flowing through the MOS transistor T6 is greater than or equal to 0, at this time, the MOS transistor T6 is turned off. Specifically, a comparator U5 is provided to compare a drain voltage UOB2 of the MOS transistor T6 with a reference voltage Uref, where the reference voltage Uref is connected to a positive input terminal of the comparator U5, the drain voltage UOB2 of the MOS transistor T6 is connected to a negative input terminal of the comparator U5 through a resistor R5, when the drain voltage UOB2 of the MOS transistor T6 is less than or equal to the reference voltage Uref, the comparator U5 outputs a signal to turn on the MOS transistor T6, and when the drain voltage UOB2 of the MOS transistor T6 is greater than or equal to the reference voltage Uref, the comparator U5 outputs a signal to turn over to turn off the MOS transistor T6.

For the C-phase lower bridge arm, the voltage formed by the current on the channel resistor of the MOS transistor T9, that is, the drain voltage UOC2 of the MOS transistor T9, is used to detect the current flowing through the MOS transistor T9 in the C-phase, when the drain voltage UOC2 of the MOS transistor T9 is less than the reference voltage, it means that the current flowing through the MOS transistor T9 is less than or equal to 0, at this time, the MOS transistor T9 is turned on, and when the drain voltage UOC2 of the MOS transistor T9 is greater than or equal to the reference voltage, it means that the current flowing through the MOS transistor T9 is greater than or equal to 0, at this time, the MOS transistor T9 is turned off. Specifically, a comparator U6 is provided to compare a drain voltage UOC2 of the MOS transistor T9 with a reference voltage Uref, where the reference voltage Uref is connected to a forward input terminal of the comparator U6, the drain voltage UOC2 of the MOS transistor T9 is connected to a reverse input terminal of the comparator U6 through a resistor R6, when the drain voltage UOC2 of the MOS transistor T9 is less than or equal to the reference voltage Uref, the comparator U6 outputs a signal to turn on the MOS transistor T9, and when the drain voltage UOC2 of the MOS transistor T9 is greater than or equal to the reference voltage Uref, the comparator U6 outputs a signal to turn over to turn off the MOS transistor T9.

In addition, compared with the traditional short-circuit voltage regulator formed by 6 MOS tubes, the switch-type voltage regulator formed by 9 MOS tubes has the following advantages:

1. on the load state of the magneto ACG: the switch type voltage regulator with 9 MOS tubes is obviously superior to the short-circuit type voltage regulator with 6 MOS tubes. The switch type voltage regulator with 9 MOS tubes can rectify current according to the load requirement, and the smaller the load is, the smaller the switch-on is, and the smaller the ACG load of the magneto is; and the short-circuit voltage regulator with 6 MOS tubes can make the magneto ACG always work in the full-load state even when the load is small.

2. In the aspect of fuel economy: the switch type voltage regulator with 9 MOS tubes is superior to the short-circuit type voltage regulator with 6 MOS tubes. The reason is that the output current of the magnetic motor ACG of the short-circuit voltage regulator with 6 MOS tubes is always the largest, so that the load of the engine is increased, and the fuel economy is not promoted; through measurement, when a 125-type motorcycle is used, the total output power of an engine is 6.5KW, the carried electric energy load is 180W, and the load is 80W in the daytime, after a short-circuit voltage regulator is adopted, the extra 80W loss accounts for 1.3 percent of the total power of the engine, which means that 1.3 percent of the waste in fuel consumption is caused. And the output current of the switch type voltage regulator magneto of 9 MOS pipes changes along with the load size, and more extra loss is avoided, so that the fuel economy of the scheme is better.

3. Heat generation amount of magneto ACG: when a short-circuit voltage regulator with 6 MOS tubes is applied, the magneto ACG is always in the maximum output state, so that the magneto ACG generates heat in the maximum state, the ACG cooling circulation system is tested seriously, and the condition of over-temperature of cooling oil often occurs. And the application of the switch type voltage regulator with 9 MOS tubes can avoid the phenomenon of high oil temperature in most of using time periods.

4. Reliability of the magneto ACG: the short-circuit voltage regulator using 6 MOS tubes has the largest heat productivity, and the largest current of a distribution line from the magnetic motor ACG to the voltage regulator, so that the reliability of the magnetic motor and the distribution line is reduced, the heat productivity of the switch-type voltage regulator using 9 MOS tubes is small, and the reliability of the magnetic motor and the distribution line is also higher.

Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the technical solutions, and those skilled in the art should understand that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions, and all that should be covered by the claims of the present invention.

Claims

1. A control method of an MOS switch type voltage regulator for a motorcycle is characterized in that the MOS switch type voltage regulator comprises an upper bridge arm and a lower bridge arm, the upper bridge arm comprises an MOS tube T1, an MOS tube T2, an MOS tube T4, an MOS tube T5, an MOS tube T7 and an MOS tube T8, and the lower bridge arm comprises an MOS tube T3, an MOS tube T6 and an MOS tube T9;

the source electrode of the MOS transistor T1 is connected with a load, the drain electrode of the MOS transistor T1 is connected with the drain electrode of the MOS transistor T2, the source electrode of the MOS transistor T2 is connected with the phase A output end of the magneto, the source electrode of the MOS transistor T3 is grounded, and the drain electrode of the MOS transistor T3 is connected with the phase A output end of the magneto;

when the alternating current voltage of the magnetor is negative half-wave, the MOS transistor T7 and the MOS transistor T8 are turned off, the MOS transistor T9 is turned on, and when the alternating current voltage of the magnetor is positive half-wave, the MOS transistor T9 is turned off, and the MOS transistor T7 and the MOS transistor T8 are turned on or turned off;

setting a conduction angle ɵ, and adjusting the output voltage VBATT of the MOS switch type voltage regulator by adjusting the conduction angle ɵ;

when the phase A of the magneto is positive half-wave alternating current voltage, before a conduction angle ɵ, the MOS transistor T1, the MOS transistor T2 and the MOS transistor T3 are all in a cut-off state, and the phase A alternating current voltage does not output energy to a load; when the current reaches a conduction angle ɵ, the MOS tube T1 and the MOS tube T2 are conducted, the MOS tube T3 is cut off, and the A alternating current voltage starts to output energy to a load; when the A-phase positive half-wave alternating voltage value is lower than the output voltage VBATT of the output end MOS switch type voltage regulator, the MOS tube T1, the MOS tube T2 and the MOS tube T3 are all in a cut-off state, and the A-phase positive half-wave alternating voltage stops outputting energy to a load; when the phase A of the magnetor is negative half-wave alternating voltage, the MOS tube T3 is switched on, and the MOS tube T1 and the MOS tube T2 are switched off;

when the C phase of the magnetor is positive half-wave alternating voltage, before the conduction angle ɵ, the MOS transistor T7, the MOS transistor T8 and the MOS transistor T9 are all in a cut-off state, and the C phase alternating voltage does not output energy to a load; when the current reaches a conduction angle ɵ, the MOS tube T7 and the MOS tube T8 are conducted, the MOS tube T9 is cut off, and the C alternating-current voltage starts to output energy to a load; when the positive half-wave alternating voltage value of the C phase is lower than the output voltage VBATT of the output end MOS switch type voltage regulator, the MOS tube T7, the MOS tube T8 and the MOS tube T9 are all in a cut-off state, the C phase alternating voltage stops outputting energy to a load, when the C phase of the magneto is negative half-wave alternating voltage, the MOS tube T9 is conducted, and the MOS tube T7 and the MOS tube T8 are cut off;

when the phase A of the magneto is positive half-wave alternating voltage and the phase A does not generate alternating-current overvoltage protection, when the phase A reaches a conduction angle of ɵ, the MOS transistor T1 is firstly switched on, and the MOS transistor T2 is switched on after the time delay of 100ns to 50us, and the positive half-wave alternating voltage of the phase A is rectified by the MOS transistor T1 and the MOS transistor T2 and then output to a load;

2. A control method of a MOS switch-type voltage regulator for motorcycles as claimed in claim 1, wherein a reference voltage Uref is set;

3. A control method of a MOS switch mode voltage regulator for motorcycles as claimed in claim 1, wherein a reference voltage Uref is set, said reference voltage Uref being less than or equal to 0V;

4. The control method of the MOS switch-type voltage regulator for motorcycles according to claim 1, wherein a phase overvoltage protection is provided, and when the ac voltage of each phase exceeds a set value, the MOS transistor of the lower bridge arm of the phase is turned on;

when the phase B of the magneto is positive half-wave alternating voltage and the phase B alternating voltage exceeds a set value and generates phase overvoltage protection, an MOS tube T6 is switched on, when the phase B reaches a conduction angle ɵ, an MOS tube T4 is switched on, the MOS tube T6 is switched off after time delay of 100ns to 50us, an MOS tube T5 is switched on after time delay of 100ns to 50us, and the positive half-wave alternating voltage of the phase B is rectified by the MOS tube T4 and the MOS tube T5 and then output to a load;

when the phase C of the magneto is positive half-wave alternating voltage and the phase C alternating voltage exceeds a set value and generates phase overvoltage protection, the MOS transistor T9 is switched on, when the phase C reaches a conduction angle ɵ, the MOS transistor T7 is switched on, the MOS transistor T9 is switched off after the time delay of 100ns to 50us, the MOS transistor T8 is switched on after the time delay of 100ns to 50us, and the positive half-wave alternating voltage of the phase C is rectified by the MOS transistor T7 and the MOS transistor T8 and then is output to a load.

5. The control method of the MOS switch mode voltage regulator for motorcycle of claim 1, wherein when the rectification current is 0 at the end of the rectification state of the phase a of the magneto, the MOS transistor T2 is turned off first, and after the delay time is greater than 100ns, the MOS transistor T1 is turned off and the MOS transistor T3 is turned on;

when the rectification current of the magnetor B-phase is 0 after the rectification state, the MOS transistor T5 is firstly turned off, and the MOS transistor T4 is turned off and the MOS transistor T6 is turned on after the delay time is more than 100 ns;

6. The control method of the MOS switch-type voltage regulator for the motorcycle according to claim 1, wherein the MOS switch-type voltage regulator stabilizes the output voltage VBATT of the MOS switch-type voltage regulator at a preset voltage value by using a BOOST rectification and a conduction angle rectification method, and the MOS switch-type voltage regulator sets a rotation speed corresponding to an intersection point of an output current curve of the BOOST rectification method and an output current curve of the conduction angle rectification method as a first rotation speed;

when the rotating speed of the magnetor is less than or equal to a first rotating speed, the MOS switch type voltage regulator adopts a mixed voltage regulation mode of BOOST rectification and conduction angle rectification;

7. The method of claim 6 wherein when the speed of the magneto is less than or equal to the first speed, the output voltage VBATT of the MOS switch type voltage regulator is increased to fully cover the positive half-wave of each AC at the conduction angle ɵ and still less than the preset voltage value as the load is increased, the MOS switch type voltage regulator is switched from the conduction angle rectification method to the BOOST rectification method; when the load is reduced, the PWM duty ratio of the MOS switch type voltage regulator adopting BOOST boosting rectification is reduced, and the MOS switch type voltage regulator is switched to a conduction angle rectification method from the BOOST boosting rectification method;

when the rotating speed of the magneto is greater than a first rotating speed and the output voltage VBATT of the MOS switch type voltage regulator is reduced to be smaller than a preset voltage value, the width of a conduction angle ɵ is increased, and the conduction time of each phase of MOS tube is increased, so that the output voltage VBATT of the MOS switch type voltage regulator is increased and stabilized at the preset voltage value; when the output voltage VBATT of the MOS switch type voltage regulator is increased to be larger than the preset voltage value, the width of the conduction angle ɵ is reduced, the conduction time of each phase of MOS tube is reduced, and the output voltage VBATT of the MOS switch type voltage regulator is reduced and stabilized at the preset voltage value.