CN113555498B - Magnetic random access memory, preparation method and control method thereof - Google Patents
Magnetic random access memory, preparation method and control method thereof Download PDFInfo
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- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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Abstract
The application discloses a magnetic random access memory, a preparation method and a control method thereof, which relate to the field of tunneling magneto-resistors and comprise the following steps: constructing a bottom hierarchical structure of the magnetic random access memory; constructing a mixed heavy metal layer; constructing a residual tunneling magnetic tunnel junction film layer structure; a tunnel magnetic tunnel junction is fabricated. According to the method, a mixed heavy metal layer is constructed on the upper surface of a bottom substrate structure, a complete magnetic tunnel junction is generated on the upper surface of the metal layer made of different materials through sputtering, and current is introduced into the heavy metal layer, so that the heavy metal layer realizes multi-mode overturning action when the current is introduced by utilizing the different properties of spin Hall angles and different sizes of different materials. The magnetic random access memory has good storage performance, and can realize logic storage integration of a computer, thereby improving the operation speed of the computer.
Description
Technical Field
The application relates to the field of magnetic electronic devices, in particular to a preparation method of a magnetic random access memory.
Background
With the continuous updating and upgrading of the software and hardware performances of electronic equipment, the market has raised higher requirements for the running speed and the storage speed of computers. In the traditional von neumann computer architecture, the processor and the memory are two separate devices, the computing speed of the processor in the prior art is much faster than the reading and writing speed of the memory, and the information in the memory needs to be continuously transmitted between the processor and the memory to operate, so that the operating speed of the computer is greatly limited, namely, the problem of a 'memory wall' in a common sense.
To solve the above-mentioned problems, a system structure for improving the operation speed of a computer is disclosed in the present stage, as shown in fig. 1, the system structure includes: a root component 201, and three chips 202, 203, 204, and a converter 205, wherein: two PCIe (peripheral component interconnect express, high speed serial computer expansion bus standard) interfaces are provided on the chips of the at least two chips, the at least two chips are connected to the transducer through PCIe interfaces, and the chips or the transducer of the at least two chips are connected to the heel assembly. According to the embodiment, the operation capacity is increased and the operation speed is improved through at least two chips. Because the technology still adopts a mode of 'logical storage split', the problem of 'storage wall' is not solved fundamentally, and therefore, in future application, with further improvement of the requirement of calculation, namely the running speed, the technology still falls into a bottleneck state.
Currently, with the continuous maturity of magnetic memory development and preparation technology, magnetic random access memories (MRAM, magnetic Random Access Memory), including Spin-orbit torque-magnetic random access memories (SOT-MRAM, spin-orbit torque MRAM), have become the most potential memories for replacing embedded flash memories due to their own advantages of high storage density, low energy consumption, non-volatile information, and the like. The memory based on the magnetic material has the characteristics of electrical control and natural information non-volatile property, and is an ideal system for realizing logic storage integration.
Therefore, the spin logic device based on the magnetic material and the spintronics technology is further developed and utilized, the problem of a storage wall of a computer is fundamentally solved, and logic storage integration is realized, so that the operation speed of the computer is very important.
Disclosure of Invention
The embodiment of the application provides a preparation method of a magnetic random access memory, which can accurately and stably realize logic operation and multi-mode storage of data.
In order to solve the above problems, a first aspect of the present application provides a method for manufacturing a magnetic random access memory, including the steps of:
s1: constructing a bottom hierarchical structure of the magnetic random access memory;
s2: constructing a mixed heavy metal layer;
s3: constructing a tunneling magnetic tunnel junction film layer structure;
s4: a tunnel magnetic tunnel junction is fabricated.
In some embodiments, the method for manufacturing the magnetic random access memory can be used for SOT-MRAM cells with a Via (through interconnection Via) connection structure and a contact connection structure of the heavy metal layer.
In some embodiments, the mixed heavy metal layer has a structure that at least two materials capable of generating a spin flow structure are arranged in the same layer.
In some embodiments, the mixed heavy metal layer material class selection includes: heavy metal simple substance, heavy metal oxide, heavy metal nitride, alloy, antiferromagnetic magnetic material, crystal film, polycrystalline film, amorphous film, outer semi-metal and two-dimensional electron gas.
In some embodiments, the materials of the mixed heavy metal layer should keep the spin hall angles of the selected materials opposite to each other, and the absolute values of the spin hall angles are different.
In some embodiments, the method of constructing a hybrid heavy metal layer includes the steps of:
g1: constructing a first part of heavy metal layer on the upper surface of the bottom layer structure;
and G2: removing redundant first part of heavy metal layers constructed on the upper surface of the bottom layer structure, and reserving a subsequent heavy metal layer region to be constructed;
and G3: constructing a subsequent part of heavy metal layer on the upper surface of the bottom layer structure;
and G4: and (5) removing the upper surface of each metal layer without related construction waste.
In some embodiments, in the method for constructing a hybrid heavy metal layer, the metal layer construction may be performed by using a sputtering method.
In some embodiments, in the method for constructing a hybrid heavy metal layer, the removing the redundant metal layer and the removing the upper surface of the metal layer without related construction waste can be performed by etching.
In some embodiments, the structuring of the residual MTJ (tunneling magnetic tunnel junction, magnetic Tunnel Junction) structure over the heavy metal layer is performed using sputtering.
In some embodiments, the processing of the MTJ film layer structure into an MTJ tunnel junction process may be implemented by steps comprising: gluing, developing and etching. In some embodiments, the number of the heavy metal layer areas to be built is greater than or equal to 2, and the steps G2, G3, and G4 are performed cyclically until the hybrid metal layer is built.
The second aspect of the present application also provides a magnetic random access memory, characterized in that the magnetic random access memory comprises: a magnetic tunnel junction having a hybrid heavy metal layer; wherein,,
the mixed heavy metal layer comprises at least two heavy metal materials with opposite spin hall angles and different absolute values.
In some embodiments, the hybrid heavy metal layer material is selected to include at least two materials that can create a spin-flow structure.
In some embodiments, the magnetic random access memory tunneling magnetic tunnel junction structure is a top-pinned structure.
In a third aspect of the present application, there is also provided a method for controlling a polymorphism of a magnetic random access memory, wherein the method is applied to the magnetic random access memory, and comprises:
current in different directions and/or different magnitudes is respectively introduced into a bottom electrode of a magnetic tunnel junction of the magnetic random access memory, so that spin hall angle directions of various heavy metal materials of a mixed heavy metal layer in the magnetic tunnel junction form a plurality of different direction groups;
the plurality of different directional groups cause the magnetic tunnel junction to form a plurality of different resistance states;
and respectively identifying the plurality of different resistance states, and respectively storing and/or reading the different resistance states representing different binary data.
The embodiment of the application provides a preparation method of a magnetic random access memory capable of carrying out logical operation, which comprises the steps of constructing a mixed heavy metal layer on the upper surface of a bottom substrate structure, sputtering the upper surface of the metal layer made of different materials to generate a complete magnetic tunnel junction, and aiming at the current flowing into the heavy metal layer, utilizing the property that the spin Hall angle direction and the absolute value of different materials are different, so that the heavy metal layer realizes multi-mode overturning action when the current is flowing into the heavy metal layer. Combines the good storage performance of the magnetic random access memory
The logic storage integration of the computer is realized, so that the operation speed of the computer is improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application.
FIG. 1 is a schematic diagram of a prior art system according to the present application;
FIG. 2 is a schematic diagram of a tunneling magnetic tunnel junction structure according to an embodiment of the present application;
FIG. 3-a is a schematic diagram of SOT-MRAM cell with a Via-connected heavy metal layer according to an embodiment of the application;
FIG. 3-b is a schematic diagram of a SOT-MRAM cell with a contact connection type heavy metal layer according to an embodiment of the application;
FIG. 4 is a schematic diagram of current input waveforms and modal output of a hybrid heavy metal layer according to an embodiment of the application;
FIG. 5 is a schematic diagram of a process for fabricating a logically operable MRAM according to an embodiment of the application;
fig. 6 is a schematic flow chart of the construction of the hybrid heavy metal layer according to an embodiment of the application;
FIG. 7 is a schematic diagram of a substrate layer structure of a MRAM according to an embodiment of the application;
FIG. 8 is a schematic diagram showing a structural change of a product during the construction of the hybrid heavy metal layer according to an embodiment of the present application;
FIG. 9-a is a schematic diagram of a product of a film growth process after a tunneling magnetic tunnel junction metal layer is built in accordance with an embodiment of the present application;
fig. 9-b is a schematic diagram of a tunneling magnetic tunnel junction finished product structure in accordance with an embodiment of the present application.
Detailed Description
In order to make the objects, features and advantages of the present application more obvious and understandable, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It will be appreciated by those skilled in the art that the terms "first," "second," and the like in the present disclosure are used merely to distinguish between different devices, modules, or parameters, and the like, and do not represent any particular technical meaning nor necessarily logical order between them.
As shown in fig. 2, the SOT-MRAM core structure, the tunneling magnetic tunnel junction structure, is distinguished from bottom to top, and mainly comprises: a substrate layer (substrate), a heavy metal layer, a free layer, a non-magnetic layer, a fixed layer, an antiferromagnetic coupling layer, a pinning layer, and a capping layer. Wherein the heavy metal layer produces a spin hall effect. Spin (spin) is an angular momentum of an electron, spin hall effect is that under the condition of no external magnetic field, an electric field is introduced, unpolarized current is injected, electrons moving upwards and downwards are moved in opposite directions, however, the number of charges moving upwards and downwards is equal, so that no net current flows, and the main reason of spin hall effect is based on spin orbit coupling (SOC, spinOrbitCoupling) of electrons in a material, namely the interaction result of spin angular momentum and orbital angular momentum of electrons, and therefore, the intensity of the spin hall effect result degree has a strong correlation with the selection of a used sample material. In SOT-MRAM applications, SOT-MRAM creates a spin flow perpendicular to the current direction by creating an unbalanced spin accumulation in the heavy metal layer by utilizing interactions between the electron spin and the orbitals. The spin-polarized current entering the free layer rapidly reacts with the local magnetic moment to create a spin-orbit torque (or a field) that, if a critical current is reached, induces a reversal of the magnetic moment. SOT-MRAM is capable of producing strong spin-orbit coupling from a spin-orbit torque effect heavy metal layer, and spin sources tend to have some spin-charge conversion efficiency, i.e., spin Hall angle (SHA, spinHallAngle).
In one embodiment of the application, in order to realize the logical operation function of the magnetic memory, two materials with opposite spin hall angles and different absolute values are constructed for the mixed heavy metal layer based on the principle that the spin hall angles of different heavy metal layer materials are different. As illustrated in the SOT-MRAM cell with two heavy metal layer connections depicted in FIGS. 3-a and 3-b, the spin hall angle of W and the spin hall angle of Pt are opposite in direction, the spin hall angle of W is negative, the spin hall angle of Pt is positive, and the absolute value of the spin hall angle of W is greater than the absolute value of the spin hall angle of Pt in quantitative terms, i.e. |θ W |＞|θ Pt The relationship of the write current used is: i W ＜I Pt Therefore, when the same current is introduced, the two metals have logical non-relation and time sequence precedence relation in the tunnel overturning junction corresponding to tunneling, so that the description of the logic state can be realized according to the requirement, and the device has the capability of logic operation.
In one embodiment of the present application, to implement the logic state operation on the mixed heavy metal layer, as shown in fig. 4, an expression logic of the tunneling magnetic tunnel junction inversion state is proposed. And current is introduced into the bottom electrode of the magnetic tunnel junction, and the current passes through the heavy metal layers, so that different influences can be generated on the resistance state of the upper-layer MTJ (magnetic tunnel junction) due to the fact that spin Hall angles of the two heavy metal layers are opposite and unequal. Taking the heavy metal layer material as W and PFor example, when a positive current is applied to the bottom electrode, the absolute value of the spin hall angle of W is larger than that of Pt, i.e., |θ, due to the opposite spin hall angles of W and Pt W |＞|θ Pt The relationship of the write current used is: i W ＜I Pt . The SOT-MRAM state after current is applied is shown as (01), and as the forward current increases, the write current magnitude relationship due to W and Pt is: i W ＜I Pt Thus, during the current increase, W first effects a flip, after which the SOT-MRAM state appears as (11). When negative current is introduced into the bottom electrode, the SOT-MRAM state is shown as (10) after current is introduced due to the opposite spin Hall angles of W and Pt, and the write current magnitude relation due to W and Pt is as follows: i W ＜I Pt Thus, during the current increase, W first achieves a flip, after which the SOT-MRAM state behaves as (00). Thereby, the multi-state logic operation and expression of SOT-MRAM are realized.
In one embodiment of the present application, a method for preparing a magnetic random access memory capable of performing logical operations is provided, as shown in fig. 5, and includes the steps of:
s1: a bottom hierarchy of the magnetic random access memory is constructed.
Underlying substrate structure as shown in fig. 7, a complementary metal oxide semiconductor (CMOS, complementaryMetalOxideSemiconductor) integrated wafer of a conventional semiconductor lithography back end of line (BEOL) is employed as a substrate. The substrate slice is also called wafer (wafer substrate), the technological means at the current stage of wafer processing is mature, the method can directly use the finished product or independently prepare according to special requirements, and the common wafer manufacturing technological process of 200mm CMOS comprises the following steps: 1) pulling single crystal, 2) slicing, 3) grinding, 4) polishing, 5) layering, 6) lithography, 7) doping, 8) heat treatment, 9) needle testing, 10) dicing.
S2: constructing a mixed heavy metal layer.
The construction of the heavy metal layer can adopt a sputtering process means. The sputtering process is a process of bombarding the solid surface with particles (particles or neutral atoms and molecules) with certain energy, so that atoms or molecules near the solid surface obtain enough energy to finally escape from the solid surface, the sputtering process can only be performed under a certain vacuum state, and the mixed heavy metal layer growth construction is preferably the sputtering process, but the method is not limited to the scheme, and other modes are also applicable.
Optionally, the sputtering process of the hybrid heavy metal layer growth construction includes, but is not limited to, secondary sputtering, tertiary sputtering or quaternary sputtering, magnetron sputtering, target sputtering, radio frequency sputtering, bias sputtering, asymmetric alternating current radio frequency sputtering, ion beam sputtering, reactive sputtering, and the like.
Optionally, the mixed heavy metal layer growth build material comprises at least one of the following materials: a non-magnetic metal typified by Ta (tantalum), W, pt, pd (lead), hf (hafnium), au (gold), or the like;
optionally, the mixed heavy metal layer growth building material may also be selected from WO or WN; and a multilayer structure of WO/WN thereof, the thickness of which is defined between 1 and 10nm;
optionally, the mixed heavy metal layer growth build material may also be selected as an alloy of different atomic ratios of the materials of the above metals, including but not limited to: au (gold) and method for producing the same 0.93 W 0.07 、Au 0.9 Ta 0.1 、Au x Pt 100 -x, thickness generally ranging from 1 to 10nm;
optionally, the hybrid heavy metal layer growth build material may also be selected as antiferromagnetic magnetic material, including but not limited to: irMn, ptMn, feMn, pdMn, L1 0 -IrMn、poly-IrMn；
Optionally, the mixed heavy metal layer growth build material may be selected as a crystalline film, a polycrystalline film or an amorphous film, including but not limited to: bi (Bi) 2 Se 3 、Bi 2 Te 3 、Sb 2 Te 3 、(Bi x Sb 1-x ) 2 Te 3 Or Bi x Se 1-x ；
Alternatively, the hybrid heavy metal layer growth build material may also be selected as a halfmetal, including but not limited to WTE 2 、MoTe 2 Or Mo (Mo) x W 1-x Te 2 ；
Alternatively, the hybrid heavy metal layer growth build-up material may be selected to be any structure that can generate a self-swirling flow, including but not limited to two-dimensional electron gas.
S3: and constructing a tunneling magnetic tunnel junction film layer structure.
The tunneling magnetic tunnel junction film structure can be constructed by adopting a sputtering process, and the construction effect is shown in figure 9-a.
Optionally, the sputtering process for growing and constructing the tunneling magnetic tunnel junction film layer includes, but is not limited to, secondary sputtering, tertiary sputtering or quaternary sputtering, magnetron sputtering, target sputtering, radio frequency sputtering, bias sputtering, asymmetric alternating current radio frequency sputtering, ion beam sputtering, reactive sputtering, and the like.
S4: a tunnel magnetic tunnel junction is fabricated.
After the tunneling magnetic tunnel junction film layer structure grows completely, the tunneling magnetic tunnel junction structure is processed, and the processing effect is shown in fig. 9-b. The usual processing steps include: gluing, developing and etching.
The metal layers of the SOT-MRAM structure cells can be classified into Via type connection and contact type connection according to the type of connection of the heavy metal layers, and a typical structure can be seen from examples of the structures in FIGS. 3-a and 3-b. The technical scheme of the embodiment of the application mainly comprises the steps of constructing the mixed heavy metal layer on the surface of the bottom substrate, utilizing the difference of the spin Hall angle and the direction among different materials, realizing the split description of logic states, realizing the addition of the logic operation function of the SOT-MRAM, not changing the whole structure of the SOT-MRAM in the process, and having compatibility for SOT-MRAM units with various modal structures.
In a preferred embodiment of the present application, taking an SOT-MRAM structure with a heavy metal layer Via type connection mode as an example, the underlying substrate structure selects a Via type connection type, and the flow of constructing the hybrid heavy metal layer is shown in FIG. 6, and the method comprises the following steps:
g1: constructing a first part of heavy metal layer on the upper surface of the bottom layer structure;
wherein, the construction means can adopt a sputtering growth means. The hybrid heavy metal layer growth build-up described herein is preferably a sputtering process, but is not limited to this scheme, as other modes are equally applicable.
Optionally, the sputtering process of the hybrid heavy metal layer growth construction includes, but is not limited to, secondary sputtering, tertiary sputtering or quaternary sputtering, magnetron sputtering, target sputtering, radio frequency sputtering, bias sputtering, asymmetric alternating current radio frequency sputtering, ion beam sputtering, reactive sputtering, and the like.
And G2: and removing the superfluous constructed first part of heavy metal layer on the upper surface of the bottom layer structure, and reserving a subsequent heavy metal layer region to be constructed.
The conventional understanding of constructing the hybrid heavy metal layer can be that two construction ideas 1) designated area sputtering, 2) first sputtering complete area and then clearing, and reserving a second sputtering area. The first concept requires higher sputtering accuracy and is more difficult to operate. In general, to ensure that the sputtering area is complete, the range of sputtering effects during actual sputter growth is greater than that of the sputtering target area, so that the second construction concept is more preferable here.
Optionally, the step of removing the excess of the first part of heavy metal layer comprises: and (3) performing technological operations such as gluing, developing, etching and the like.
And G3: and constructing a subsequent part of heavy metal layer on the upper surface of the bottom layer structure.
Wherein, the construction means can adopt a sputtering growth means. The hybrid heavy metal layer growth build-up described herein is preferably a sputtering process, but is not limited to this scheme, as other modes are equally applicable.
Optionally, the sputtering process of the hybrid heavy metal layer growth construction includes, but is not limited to, secondary sputtering, tertiary sputtering or quaternary sputtering, magnetron sputtering, target sputtering, radio frequency sputtering, bias sputtering, asymmetric alternating current radio frequency sputtering, ion beam sputtering, reactive sputtering, and the like.
And G4: and (5) removing the upper surface of each metal layer without related construction waste.
After the sputtering growth of the subsequent heavy metal layer is completed, the phenomenon of waste material coverage can occur for the upper surface structure of the product, and the phenomenon is specifically shown in the product state shown in the step G3 in FIG. 8. The upper surface of the product still presents an unmixed heavy metal layer, and the irrelevant waste on the upper surface of the product needs to be treated, and the treated state is the product state shown in the step G4 in fig. 8.
Optionally, the step of removing the excess of the first part of heavy metal layer comprises: and (3) performing technological operations such as gluing, developing, etching and the like.
The product state changes corresponding to the steps of the mixed heavy metal layer construction flow are shown in fig. 8. As can be seen from the figure, the preparation process realizes the construction of the mixed metal layer, and a new type material region is constructed in the original heavy metal layer region. No significant effect is caused on the product stacking status. Therefore, on the premise that the technical scheme of the embodiment of the application can ensure that the storage performance of the original SOT-MRAM is not negatively affected, the hybrid heavy metal layer structure is provided, and the logic storage integration is realized.
Optionally, in the method for constructing the mixed heavy metal layer, the metal layer construction may be performed by adopting a sputtering mode.
Optionally, in the method for constructing a hybrid metal layer, the removing of the redundant metal layer and the removing of the upper surface of the metal layer without related construction waste materials may be performed by etching.
The embodiment of the application provides a preparation method of a magnetic random access memory capable of carrying out logical operation, which comprises the steps of constructing a mixed heavy metal layer on the upper surface of a bottom substrate structure, sputtering the upper surface of the metal layer made of different materials to generate a complete magnetic tunnel junction, introducing current into the heavy metal layer, and utilizing the different properties of spin Hall angles and different sizes of different materials to enable the heavy metal layer to realize multi-mode overturning action when the current is introduced. The magnetic random access memory has good storage performance, and can realize logic storage integration of a computer, thereby improving the operation speed of the computer.
The above description is not intended to limit the scope of the application, but is intended to cover any modifications, equivalents, and improvements within the spirit and principles of the application.
Claims (9)
1. A method of fabricating a magnetic random access memory, the method comprising:
s1: constructing a bottom layer structure of the magnetic random access memory;
s2: constructing a mixed heavy metal layer;
s3: constructing a tunneling magnetic tunnel junction film layer structure;
s4: constructing and processing a tunneling magnetic tunnel junction;
the preparation method of the magnetic random access memory is used for SOT-MRAM units with a mixed heavy metal layer of a Via type connection structure and a contact connection type structure;
the mixed heavy metal layer is made of two materials with opposite spin hall angles and different spin hall angle absolute values;
the magnetic random access memory has a logic operation function, and the logic operation process comprises the following steps: inputting current to a mixed heavy metal layer of the magnetic random access memory, and changing the direction and the magnitude of the input current to ensure that the turning moment and the turning direction of the magnetic moment directions in different free layers above the mixed heavy metal layer are different so as to realize the logic operation of the magnetic random access memory;
the mixed heavy metal layer structure is of the same layer surface and is provided with at least two materials generating a self-rotational flow structure;
the S4: construction and processing of tunnel magnetic tunnel junctions，Comprising the following steps:
and generating tunneling magnetic tunnel junctions on heavy metal layers of different materials, wherein the number of the tunneling magnetic tunnel junctions is greater than or equal to 2.
2. The method of claim 1, wherein the mixed heavy metal layer material class selection comprises: heavy metal simple substance, heavy metal oxide, heavy metal nitride and alloy.
3. The method according to claim 1, wherein the step of constructing the mixed heavy metal layer comprises the steps of:
g1: constructing a first part of heavy metal layer on the upper surface of the bottom layer structure;
and G2: removing redundant first part of heavy metal layers constructed on the upper surface of the bottom layer structure, and reserving a subsequent heavy metal layer region to be constructed;
g3; constructing a subsequent part of heavy metal layer on the upper surface of the bottom layer structure;
and G4: and (5) removing the upper surface of each metal layer without related construction waste.
4. A method according to claim 3, wherein in the step of constructing the mixed heavy metal layer, the heavy metal layer is constructed by sputtering.
5. The method of claim 3, wherein in the step of constructing the mixed heavy metal layer, the removing of the redundant heavy metal layer and the removing of the upper surface of each metal layer are performed by etching without related construction waste.
6. The method of claim 3, wherein in the step of constructing the mixed metal layer, when the number of the heavy metal layer areas to be constructed is greater than or equal to 2, the steps G2, G3, and G4 are cyclically executed until the mixed metal layer construction is completed.
7. A magnetic random access memory, the magnetic random access memory comprising: a magnetic tunnel junction having a hybrid heavy metal layer; wherein,,
the mixed heavy metal layer comprises two heavy metal materials with opposite spin hall angles and different absolute values;
the preparation method of the magnetic random access memory comprises the following steps:
s1: constructing a bottom hierarchical structure of the magnetic random access memory;
s2: constructing a mixed heavy metal layer;
s3: constructing a tunneling magnetic tunnel junction film layer structure;
s4: constructing and processing a tunneling magnetic tunnel junction;
the preparation method of the magnetic random access memory is used for SOT-MRAM units with a Via type connection structure and a contact connection type structure of the mixed heavy metal layer;
the magnetic random access memory has a logic operation function, and the logic operation process comprises the following steps: inputting current to a mixed heavy metal layer of the magnetic random access memory, and changing the direction and the magnitude of the input current to ensure that the turning moment and the turning direction of the magnetic moment directions in different free layers above the mixed heavy metal layer are different so as to realize the logic operation of the magnetic random access memory;
the mixed heavy metal layer structure is of the same layer surface and is provided with at least two materials generating a self-rotational flow structure;
the S4: building a fabricated tunneling magnetic tunnel junction comprising:
and generating tunneling magnetic tunnel junctions on heavy metal layers of different materials, wherein the number of the tunneling magnetic tunnel junctions is greater than or equal to 2.
8. The magnetic random access memory of claim 7 wherein the magnetic random access memory tunneling magnetic tunnel junction structure is a top-pinned structure.
9. A method for polymorphic control of a mram, characterized in that the method is applied to the mram as claimed in any of claims 7 to 8, comprising:
respectively introducing a current into a bottom electrode of a magnetic tunnel junction of the magnetic random access memory, wherein spin hall angle directions and absolute values of various heavy metal materials of the mixed heavy metal layer in the magnetic tunnel junction are different, so that the mixed heavy metal layer forms a plurality of different direction groups;
the plurality of different directional groups cause the magnetic tunnel junction to form a plurality of different resistance states;
and respectively identifying the plurality of different resistance states, and respectively storing and/or reading the different resistance states representing different binary data.
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Effective date of registration: 20231227 Address after: Room 1605, Building 1, No. 117 Yingshan Red Road, Huangdao District, Qingdao City, Shandong Province, 266400 Patentee after: Qingdao Haicun Microelectronics Co.,Ltd. Address before: 100191 rooms 504a and 504b, 5th floor, 23 Zhichun Road, Haidian District, Beijing Patentee before: Zhizhen storage (Beijing) Technology Co.,Ltd. |