CN113809229B - Spin orbit moment magnetic memory and preparation method thereof - Google Patents
Spin orbit moment magnetic memory and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 7
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- 238000004544 sputter deposition Methods 0.000 claims description 35
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- 239000002184 metal Substances 0.000 claims description 20
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- 239000002070 nanowire Substances 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 12
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- 150000004767 nitrides Chemical class 0.000 claims description 8
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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Abstract
The application discloses an SOT-MRAM and a preparation method thereof, which relate to the field of tunneling magneto-resistors, and the spin-orbit torque magnetic memory comprises: the bottom electrode layer with set up in magnetic tunnel junction on the bottom electrode layer, wherein, the bottom electrode layer include substrate and heavy metal layer, the heavy metal layer set up in the substrate upper surface, magnetic tunnel junction includes the free layer, the free layer is provided with the inner chamber, the free layer inner chamber parcel the heavy metal layer. Therefore, according to the technical scheme, the SOT-MRAM heavy metal layer and the free layer are wrapped, so that the free layer is in contact with at least two end faces of the heavy metal layer, and when the heavy metal layer is electrified, self-rotational flow can be generated on the end faces, contacted with the heavy metal layer, of the free layer, so that multi-directional spin flow can be generated, and the SOT critical overturning current density can be reduced.
Description
Technical Field
The embodiment of the application relates to the field of electronics, in particular to a spin-orbit torque magnetic memory and a preparation method thereof.
Background
With the continued development of emerging memory development technologies, the market places higher demands on memory, particularly memory density and speed. Magnetic random access memory (MRAM, magnetic Random Access Memory), including spin-orbit-torque-magnetic random access memory (SOT-MRAM, spin Orbit Torque Magnetic Random Access Memory), has become the most potential alternative to embedded memory (eFlash) due to its large storage density, low power consumption, non-volatility, and other advantages.
In general, the SOT-MRAM is a basic structure of a heavy metal layer/free layer/oxide layer (non-magnetic barrier layer) formed by adding a heavy metal layer structure below the free layer in the original three-layer film structure of the free layer, oxide layer and fixed layer. When in-plane current is supplied to the interior of the heavy metal layer, unbalanced spin accumulation is induced by utilizing the interaction between the spin and the orbit of electrons, so that spin flow perpendicular to the current direction is formed. The spin-polarized current entering the Free Layer (FL) rapidly reacts with the local magnetic moment to create a spin-orbit torque, which, if a critical current is reached, induces a moment to flip.
In the conventional SOT-MRAM structure, only one side of the free layer is contacted with the heavy metal layer, so that only one direction spin of the heavy metal layer can be utilized in the spin flow generation process. The structure has lower current utilization rate in the overturning process, and can realize the overturning free layer only by applying larger current in the heavy metal layer. The power consumption generated by the device in the process is large, which is contrary to the actual need for reducing the critical inversion current density.
Disclosure of Invention
The embodiment of the application provides an SOT-MRAM and a preparation method thereof, which can improve the spin utilization rate of the SOT-MRAM when generating a self-rotational flow, thereby reducing the density of a turnover current.
In order to solve the above-described problems, a first aspect of the present application proposes a spin-orbit torque magnetic memory comprising: a bottom electrode layer and a magnetic tunnel junction 4 disposed over the bottom electrode layer,
the bottom electrode layer comprises a substrate 1 and a heavy metal layer 2, the heavy metal layer 2 is arranged on the upper surface of the substrate 1, the magnetic tunnel junction 4 comprises a free layer 3, the free layer 3 is provided with an inner cavity, and the free layer 3 inner cavity wraps the heavy metal layer 2, so that at least two contact surfaces of the heavy metal layer 2 are in contact with the inner wall of the free layer 3 inner cavity.
In some embodiments, at least two end faces of the heavy metal layer 2 perpendicular to the substrate have a lateral length of less than 100 nanometers (nm).
In some embodiments, the magnetic tunnel junction 4 further comprises a nonmagnetic barrier layer, a fixed layer, and a cap layer, wherein the free layer 3 is wrapped around the outer surface of the middle metal layer 2 and disposed over the substrate 1, the nonmagnetic barrier layer is disposed over the free layer 3, and the cap layer is disposed on top of the magnetic tunnel junction 4.
In some embodiments, the magnetic tunnel junction 4 further comprises: a pinned layer and an antiferromagnetic layer, the pinned layer being located above the pinned layer, the antiferromagnetic layer being located above the pinned layer, and below the capping layer, wherein the pinned layer, and the antiferromagnetic layer act as an artificial antiferromagnetic coupling layer 5.
In some embodiments, the heavy metal layer 2 comprises two opposite cross sections in a direction perpendicular to the substrate, wherein current flows from one cross section to the other.
In some embodiments, the heavy metal layer 2 material class selection includes: the metal-free metal alloy comprises a heavy metal simple substance, a heavy metal oxide, a heavy metal nitride, an alloy, an antiferromagnetic magnetic material, a crystal film, a polycrystalline film, an amorphous film, an outer-wall half metal, a two-dimensional electron gas and a non-magnetic metal simple substance, wherein the heavy metal simple substance and the non-magnetic metal simple substance at least comprise: ta (tantalum), W (tungsten), pt (platinum), pd (palladium), hf (hafnium), au (gold), mo (molybdenum) and Ti (titanium);
the heavy metal layer 2 may be an oxide or nitride of a metal capable of generating a self-selected hall angle, and the oxide or nitride of the metal capable of generating the self-selected hall angle includes: WO (tungsten oxide), WN (tungsten nitride) and mixed layer structure WO/WN, thickness 1 to 10nm;
the heavy metal layer 2 can be made of alloy with different atomic ratios of metals capable of generating self-selected Hall angle, and at least comprises Au 0.93 W 0.07 、Au 0.9 Ta 0.1 、Au x Pt 100-x A thickness of 1 to 10nm;
the top heavy metal layer 2 may be made of antiferromagnetic material, where the antiferromagnetic material includes: irMn, ptMn, feMn, pdMn, L1 0 -IrMn、poly-IrMn；
The top heavy metal layer 2 can be made of a crystal film or a polycrystalline filmAmorphous films, halfcetals or other structures that can generate a self-swirling flow, comprising at least: bi (Bi) 2 Se 3 、Bi 2 Te 3 、Sb 2 Te 3 、(Bi x Sb 1-x ) 2 Te 3 、Bi x Se 1-x 、WTe 2 、MoTe 2 、Mo x W 1-x Te 2 And a two-dimensional electron gas having a thickness of 0.5 to 10nm.
In a second aspect of the present application, there is also provided a method of manufacturing a spin-orbit torque magnetic memory, comprising the steps of:
constructing a heavy metal layer on the bottom electrode layer;
etching a heavy metal layer on the upper surface of the substrate;
constructing a magnetic tunnel junction film layer structure on the surfaces of the substrate and the heavy metal layer;
and etching a complete magnetic tunnel junction on the surface of the free layer.
In some embodiments, building the bottom heavy metal layer over the bottom electrode layer includes building a heavy metal layer over the bottom electrode layer using sputtering.
In some embodiments, the magnetic tunnel junction film layer is formed on the surfaces of the substrate and the heavy metal layer, including the magnetic tunnel junction film layer formed on the surfaces of the substrate and the heavy metal layer by sputtering.
In some embodiments, the free layer may be constructed by sputtering, and the free layer may have an inner cavity therein, and the nanowire-type heavy metal layer may be placed in the inner cavity and completely fit with the inner cavity.
In some embodiments, the process of processing the magnetic tunnel junction film layer structure into a magnetic tunnel junction may be constructed by three ways: gluing, developing and etching.
The embodiment of the application provides an SOT-MRAM with a multi-layer heavy metal layer structure and a preparation method thereof, wherein the heavy metal layer of the SOT-MRAM structure is subjected to nanowire type design, the original heavy metal layer structure is changed into a nanowire type structure, and an inner cavity is added to a free layer, so that the inner cavity of the free layer is completely wrapped in the nanowire type heavy metal layer. And current is introduced to two ends of the nanowire type heavy metal layer, and the heavy metal layer and the free layer are in a semi-surrounding state, so that multidirectional spin current can be generated at the interface of the heavy metal layer and the free layer in the electrifying process, SOT overturning is facilitated, and SOT critical overturning current density is reduced.
Drawings
In order to more clearly illustrate the technical solution of the embodiments of the present application, the drawings used in the description of the embodiments of the present application will be briefly described below. It is apparent that the drawings in the following description are only some embodiments of the application.
FIG. 1a is a schematic diagram of an exemplary SOT-MRAM in accordance with the present application;
FIG. 1b is a schematic diagram of spin-flow based on the SOT-MRAM illustrated in FIG. 1 a;
FIG. 2a is a schematic view of a magnetic tunnel junction structure of a nanowire-type heavy metal layer structure according to an embodiment of the present application;
FIG. 2b is a schematic diagram showing the spin flow direction after the nanowire-type heavy metal layer structure is energized according to an embodiment of the present application;
FIG. 2c is a schematic diagram of spin flow direction after magnetic tunnel junction etch power-up of a nanowire-type heavy metal layer structure according to an embodiment of the present application;
FIG. 3 is a schematic diagram of a SOT-MRAM substrate structure in accordance with an embodiment of the application;
FIG. 4 is a schematic diagram of a nanowire-type heavy metal structure according to an embodiment of the present application;
FIG. 5 is a schematic diagram of a magnetic tunnel junction film layer distribution according to one embodiment of the present application;
FIG. 6 is a schematic diagram of a magnetic tunnel junction silicon dioxide filled structure in accordance with an embodiment of the present application;
FIG. 7 is a schematic diagram of a post-etch magnetic tunnel junction structure in accordance with an embodiment of the present application.
Detailed Description
In order to make the objects, features and advantages of the present application more obvious and understandable, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It will be appreciated by those skilled in the art that the terms "first," "second," and the like in the present disclosure are used merely to distinguish between different devices, modules, or parameters, and the like, and do not represent any particular technical meaning nor necessarily logical order between them.
As shown in fig. 1a, a typical core structure of an SOT-MRAM includes: a heavy metal layer from bottom to top, a free layer, a non-magnetic barrier layer, a fixed layer, an antiferromagnetic coupling layer, a pinning layer and a capping layer. Wherein the heavy metal layer produces a spin hall effect. Spin (spin) is an angular momentum of an electron, spin hall effect is that an electric field is introduced under the condition of no external magnetic field, unpolarized current is injected, electrons moving upwards and downwards are moved in opposite directions as shown in fig. 1b, however, the number of charges moving upwards and downwards is equal, so that no net current flows, and the main reason of spin hall effect is based on spin orbit coupling (SOC, spin Orbit Coupling) of electrons in a material, namely the interaction result of the spin angular momentum and the orbit angular momentum of the electrons, so that the intensity of the result degree of spin hall effect has a strong correlation with the selection of the used sample material. In SOT-MRAM applications, SOT-MRAM creates a spin flow perpendicular to the direction of the current by applying an in-plane current to the heavy metal layer, creating an unbalanced spin accumulation by utilizing the interaction between the electron spin and the orbit. The spin-polarized current entering the free layer rapidly reacts with the local magnetic moment to create a spin-orbit torque (or a field) that, if a critical current is reached, induces a reversal of the magnetic moment. SOT-MRAM is capable of producing strong Spin-orbit coupling with inversion from a Spin-orbit torque effect heavy metal layer, and Spin sources tend to have some Spin-charge conversion efficiency, i.e., spin Hall Angle (SHA).
Generally, the fixed layer is not easily changed by external stimulus because the magnetic moment is fixed in one direction, and the magnetic moment direction of the free layer can be changed by spin-flow excitation induced by the SOT current, thereby switching in both directions of the easy axis. The change in direction is characterized by the high and low resistance states of the MTJ, which can be used to represent the state of stored data "1" or "0", respectively, in the magnetic memory field.
In general, in the SOT-MRAM structure illustrated in FIG. 1a, only one spin of the heavy metal layer is utilized during the spin-flow generation process due to the contact between the free layer and the heavy metal layer, as shown in FIG. 1 b. The structure has lower current utilization rate in the overturning process, and can realize the overturning free layer only by applying larger current in the heavy metal layer. The greater power consumption of the device during the process, more thermal effects, are generated, and are contrary to the actual need to reduce the critical inversion current density.
In one embodiment of the application, in order to ensure the improvement of the current utilization rate of the magnetic tunnel junction in the power-on overturning process, the SOT-MRAM is constructed by adopting a wrapped heavy metal layer.
The schematic structure of a nanowire-type heavy metal layer SOT-MRAM as shown in FIG. 2a, the SOT-MRAM comprises: a bottom electrode layer and a magnetic tunnel junction 4 disposed over the bottom electrode layer,
the bottom electrode layer comprises a substrate 1 and a heavy metal layer 2, the heavy metal layer 2 is arranged on the upper surface of the substrate 1, the magnetic tunnel junction 4 comprises a free layer 3, the free layer 3 is provided with an inner cavity, and the free layer 3 inner cavity wraps the heavy metal layer 2, so that at least two contact surfaces of the heavy metal layer 2 are in contact with the inner wall of the free layer 3 inner cavity.
Optionally, at least two end faces of the heavy metal layer 2 perpendicular to the substrate have a lateral length of less than 100 nanometers (nm).
Optionally, the heavy metal layer 2 and the free layer 3 are completely attached.
Alternatively, the heavy metal layer 2 comprises two opposite cross sections in a direction perpendicular to the substrate, wherein current flows from one cross section to the other.
In the application, the nanowire heavy metal layer structure and the free layer structure containing the inner cavity are introduced, and the heavy metal layer 2 and the free layer 3 have contact surfaces with more angles, so that the nanowire heavy metal layer structure and the free layer structure have the self-rotational flow forming directions with more angles. The direction of the spin flow is shown in fig. 2b, so that the spin flow has a spin orbit torque of more angle. Thus, the nanowire-type heavy metal layer structure provides the possibility of multi-angle application of spin-orbit torque, making the overall SOT-MRAM structure more advantageous for implementation of flipping actions, as shown in FIG. 2c, for example. Thus, the spin utilization rate of the heavy metal layer 2 is improved, and the overturning current density is reduced.
In one embodiment of the present application, in order to ensure that the nanowire-type heavy metal layer can realize an effective overturning action in the power-on process, a screening and limiting are performed on the construction material of the nanowire-type heavy metal layer.
Optionally, the selecting the category of the material of the heavy metal layer 2 includes: heavy metal simple substance, heavy metal oxide, heavy metal nitride, alloy, antiferromagnetic magnetic material, crystal film, polycrystal film, amorphous film, outer-wall half metal, two-dimensional electron gas and non-magnetic metal simple substance.
Optionally, the heavy metal simple substance includes: ta (tantalum), W (tungsten), pt (platinum), pd (palladium), hf (hafnium), au (gold), mo (molybdenum) and Ti (titanium).
Optionally, the oxide or nitride of the selectable hall angle metal may include: WO (tungsten oxide), WN (tungsten nitride) and mixed layer structures WO/WN, with a thickness of 1 to 10nm.
Optionally, the alloy with different atomic ratios of the metals capable of generating the selected Hall angle comprises at least Au 0.93 W 0.07 、Au 0.9 Ta 0.1 、Au x Pt 100-x The thickness is 1 to 10nm.
Optionally, the antiferromagnetic material comprises: irMn, ptMn, feMn, pdMn, ll 0 -IrMn、poly-IrMn。
Optionally, the crystal filmPolycrystalline films, amorphous films, halfcetals or other structures that can generate a self-swirling flow, including: bi (Bi) 2 Se 3 、Bi 2 Te 3 、Sb 2 Te 3 、(Bi x Sb 1-x ) 2 Te 3 、Bi x Se 1-x 、WTe 2 、MoTe 2 、Mo x W 1-x Te 2 And a two-dimensional electron gas having a thickness of 0.5 to 10nm.
Alternatively, the heavy metal layer 2 may be constructed by sputtering.
Further, the magnetic tunnel junction 4 is disposed on the heavy metal layer 2, the magnetic tunnel junction 4 includes the free layer 3, a nonmagnetic barrier layer, a fixed layer and a covering layer, wherein the free layer 3 wraps the outer surface of the middle metal layer 2 and is disposed on the substrate 1, the nonmagnetic barrier layer is disposed on the free layer, the fixed layer is disposed on the nonmagnetic barrier layer, and the covering layer is disposed on the top layer of the magnetic tunnel junction.
In other embodiments, as shown in fig. 2a, the film structure of the magnetic tunnel junction 4 is as follows from bottom to top: a Free Layer (FL, free Layer), a nonmagnetic barrier Layer (MgO, magnesium oxide), an artificial antiferromagnetic coupling Layer (SAF, synthetic antiferromagnetic Layer) 5, and a capping Layer (Top, mental). Wherein the artificial antiferromagnetic coupling Layer 5 is structured as shown in FIG. 2a, and comprises a fixed Layer (RL), an antiferromagnetic Layer and a pinning Layer.
Optionally, the free layer or the fixed layer ferromagnetic material may be CoFeB, coFe, co and different combinations of the three materials, at least including: co (Co) 20 Fe 60 B 20 、Co 40 Fe 40 B 20 、Co 60 Fe 20 B 20 、Co 70 Fe 30 、Co 75 Fe 25 Or Co 85 Fe 15 。
Optionally, the nonmagnetic barrier layer material at least includes: mgO, al 2 O 3 。
In one embodiment of the present application, there is provided a method for fabricating a SOT-MRAM having a nanowire-type heavy metal layer structure, comprising the steps of:
a heavy metal layer is built over the bottom electrode layer.
The bottom heavy metal layer can be constructed by adopting a sputtering process, and the effect after sputtering is shown in figure 3. The sputtering process is a process of bombarding the solid surface with particles (particles or neutral atoms and molecules) with certain energy, so that atoms or molecules near the solid surface obtain enough energy to finally escape from the solid surface, the sputtering process can only be performed under a certain vacuum state, and the mixed heavy metal layer growth construction optional sputtering process is not limited to the scheme, and other modes are applicable.
Optionally, the sputtering process of the hybrid heavy metal layer growth construction includes, but is not limited to, secondary sputtering, tertiary sputtering or quaternary sputtering, magnetron sputtering, target sputtering, radio frequency sputtering, bias sputtering, asymmetric alternating current radio frequency sputtering, ion beam sputtering, reactive sputtering, and the like;
optionally, the metal material with spin hall angle includes at least: w, pt, ta;
alternatively, the bottom metal layer 1 may be formed by sputtering, and the sputtering process may be conducted by introducing N 2 To obtain amorphous material of sputtered metal. Optionally, the selecting the category of the material of the heavy metal layer 2 includes: heavy metal simple substance, heavy metal oxide, heavy metal nitride, alloy, antiferromagnetic magnetic material, crystal film, polycrystal film, amorphous film, outer-wall half metal, two-dimensional electron gas and non-magnetic metal simple substance.
Optionally, the heavy metal simple substance includes: ta (tantalum), W (tungsten), pt (platinum), pd (palladium), hf (hafnium), au (gold), mo (molybdenum) and Ti (titanium).
Optionally, the oxide or nitride of the selectable hall angle metal may include: WO (tungsten oxide), WN (tungsten nitride) and mixed layer structures WO/WN, with a thickness of 1 to 10nm.
Optionally, the alloy with different atomic ratios of the metals capable of generating the selected Hall angle comprises at least Au 0.93 W 0.07 、Au 0.9 Ta 0.1 、Au x Pt 100-x The thickness is 1 to 10nm.
Optionally, the antiferromagnetic material comprises: irMn, ptMn, feMn, pdMn, ll 0 -IrMn、poly-IrMn。
Optionally, the crystal film, polycrystalline film, amorphous film, halfmetallic or other structure capable of generating a self-rotational flow comprises: bi (Bi) 2 Se 3 、Bi 2 Te 3 、Sb 2 Te 3 、(Bi x Sb 1-x ) 2 Te 3 、Bi x Se 1-x 、WTe 2 、MoTe 2 、Mo x W 1-x Te 2 And a two-dimensional electron gas having a thickness of 0.5 to 10nm.
And etching a heavy metal layer on the upper surface of the substrate.
The nano heavy metal layer structure constructed by the heavy metal layer can be obtained by adopting a photoetching or etching process.
Constructing a magnetic tunnel junction film layer structure on the surfaces of the substrate and the heavy metal layer;
optionally, the free layer may be formed by a sputtering method, where the sputtering process is a process of bombarding the solid surface with particles (particles or neutral atoms or molecules) with a certain energy, so that atoms or molecules near the solid surface obtain enough energy to finally escape from the solid surface, and the sputtering process may be performed only in a certain vacuum state, where the hybrid heavy metal layer growth forming optional sputtering process is not limited to this scheme, and other modes are equally applicable.
Optionally, the sputtering process of the hybrid heavy metal layer growth construction includes, but is not limited to, secondary sputtering, tertiary sputtering or quaternary sputtering, magnetron sputtering, target sputtering, radio frequency sputtering, bias sputtering, asymmetric alternating current radio frequency sputtering, ion beam sputtering, reactive sputtering, and the like.
And etching a complete magnetic tunnel junction on the surface of the free layer.
And etching the free layer to the substrate through a plurality of steps of gluing, developing, etching and the like, and keeping the free layer to wrap the heavy metal layer structure.
Alternatively, the etching process fills the silicon dioxide on two different magnetic tunnel junctions on the same substrate to process the magnetic tunnel junctions and ensure isolation of the magnetic tunnel junctions from each other, with the effect shown in FIG. 6.
In an alternative embodiment of the application, a CMOS wafer of the BEOL is chosen as the substrate, on which the heavy metal layer 2 is sputtered, wherein the heavy metal layer 2 material is W (tungsten) and the thickness of the film is 5nm.
And etching the heavy metal layer to the nanowire structure through a photoetching/etching process.
Optionally, the heavy metal layer is kept to have a width dimension of 10 to 20nm and a length dimension of 50 to 200nm.
The complete magnetic tunnel junction film layer construction is completed by a sputtering method, as shown in fig. 5.
And etching the magnetic tunnel junction film layer structure to the free layer through gluing, developing and etching operations, and filling silicon dioxide at the magnetic tunnel junction interval, wherein the filling effect is shown in figure 6.
And etching the free layer to the substrate through gluing, developing and etching operations, wherein the free layer is kept to wrap the heavy metal layer structure, and the effect after etching is shown in figure 7.
The embodiment of the application provides an SOT-MRAM with a multi-layer heavy metal layer structure and a preparation method thereof, wherein the heavy metal layer of the SOT-MRAM structure is subjected to nanowire type design, the original heavy metal layer structure is changed into a nanowire type structure, and an inner cavity is added to a free layer, so that the inner cavity of the free layer is completely wrapped in the nanowire type heavy metal layer. And current is introduced to two ends of the nanowire type heavy metal layer, and the heavy metal layer and the free layer are in a semi-surrounding state, so that multidirectional spin current can be generated at the interface of the heavy metal layer and the free layer in the electrifying process, SOT overturning is facilitated, and SOT critical overturning current density is reduced.
The above description is not intended to limit the scope of the application, but is intended to cover any modifications, equivalents, and improvements within the spirit and principles of the application.
Claims (9)
1. A spin-orbit torque magnetic memory, comprising: a bottom electrode layer and a magnetic tunnel junction (4) disposed over the bottom electrode layer,
the bottom electrode layer comprises a substrate (1) and a heavy metal layer (2), the heavy metal layer (2) is arranged on the upper surface of the substrate (1), the heavy metal layer (2) is of a nanowire type, the magnetic tunnel junction (4) comprises a free layer (3), the free layer (3) is provided with an inner cavity, and the inner cavity of the free layer (3) wraps the heavy metal layer (2) so that at least two contact surfaces of the heavy metal layer (2) are in contact with the inner wall of the inner cavity of the free layer (3);
the heavy metal layer (2) comprises two opposite cross sections in a direction perpendicular to the substrate, wherein current flows from one cross section to the other.
2. Spin-orbit torque magnetic memory according to claim 1, characterized in that the length of at least two end faces of the heavy metal layer (2) perpendicular to the substrate in a direction parallel to the substrate is less than 100 nanometers.
3. The spin-orbit torque magnetic memory according to claim 1, wherein the magnetic tunnel junction (4) further comprises a nonmagnetic barrier layer, a fixed layer and a cap layer,
the free layer (3) is wrapped on the outer surface of the heavy metal layer (2) and is arranged on the substrate (1), the nonmagnetic barrier layer is arranged on the free layer (3), and the covering layer is arranged on the nonmagnetic barrier layer.
4. The spin-orbit torque magnetic memory according to claim 1, wherein the class of heavy metal layer (2) materials comprises at least one of the following: heavy metal simple substance, heavy metal oxide, heavy metal nitride, alloy, antiferromagnetic magnetic material, crystal film, polycrystal film, amorphous film, outer-wall half metal, two-dimensional electron gas and non-magnetic metal simple substance.
5. A method of fabricating a spin-orbit torque magnetic memory, the method comprising:
building a heavy metal layer on the substrate;
etching a heavy metal layer on the upper surface of the substrate;
constructing a magnetic tunnel junction film layer structure on the surfaces of the substrate and the heavy metal layer;
etching a complete magnetic tunnel junction on the surface of the free layer;
the heavy metal layer is nanowire-shaped, the magnetic tunnel junction comprises a free layer, the free layer is provided with an inner cavity, and the free layer inner cavity wraps the heavy metal layer, so that at least two contact surfaces of the heavy metal layer are in contact with the inner wall of the free layer inner cavity;
the heavy metal layer comprises two opposite cross sections in a direction perpendicular to the substrate, wherein current flows from one cross section to the other.
6. The method of claim 5, wherein building the heavy metal layer over the substrate comprises building a heavy metal layer over the substrate using sputtering.
7. The method of claim 6, wherein constructing the magnetic tunnel junction layer on the surfaces of the substrate and the heavy metal layer comprises constructing the magnetic tunnel junction film layer on the surfaces of the substrate and the heavy metal layer by sputtering.
8. The method of claim 6, wherein the free layer is structured by sputtering and is guaranteed to have an inner cavity therein, and the heavy metal layer is placed in the inner cavity and is fully bonded to the inner cavity.
9. The method of claim 6, wherein the magnetic tunnel junction is constructed by: gluing, developing and etching.
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