CN113549884B - 一种具有垂直磁各向异性的磁性薄膜制备方法及磁性薄膜 - Google Patents
一种具有垂直磁各向异性的磁性薄膜制备方法及磁性薄膜 Download PDFInfo
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- CN113549884B CN113549884B CN202110707989.XA CN202110707989A CN113549884B CN 113549884 B CN113549884 B CN 113549884B CN 202110707989 A CN202110707989 A CN 202110707989A CN 113549884 B CN113549884 B CN 113549884B
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 75
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 229910019236 CoFeB Inorganic materials 0.000 claims abstract description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000001301 oxygen Substances 0.000 claims abstract description 31
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000004544 sputter deposition Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 9
- 229910052786 argon Inorganic materials 0.000 claims abstract description 8
- 238000005137 deposition process Methods 0.000 claims abstract description 8
- 238000005546 reactive sputtering Methods 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000013077 target material Substances 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 61
- 239000010408 film Substances 0.000 claims description 36
- 239000010409 thin film Substances 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 2
- 230000005294 ferromagnetic effect Effects 0.000 abstract description 10
- 230000003647 oxidation Effects 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 8
- 238000000137 annealing Methods 0.000 abstract description 7
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 7
- 230000000052 comparative effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/082—Oxides of alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
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CN202110707989.XA CN113549884B (zh) | 2021-06-24 | 2021-06-24 | 一种具有垂直磁各向异性的磁性薄膜制备方法及磁性薄膜 |
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CN202110707989.XA CN113549884B (zh) | 2021-06-24 | 2021-06-24 | 一种具有垂直磁各向异性的磁性薄膜制备方法及磁性薄膜 |
Publications (2)
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CN113549884A CN113549884A (zh) | 2021-10-26 |
CN113549884B true CN113549884B (zh) | 2022-11-11 |
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CN202110707989.XA Active CN113549884B (zh) | 2021-06-24 | 2021-06-24 | 一种具有垂直磁各向异性的磁性薄膜制备方法及磁性薄膜 |
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Families Citing this family (3)
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CN114002252B (zh) * | 2021-12-31 | 2022-04-26 | 季华实验室 | 多层薄膜材料的垂直磁各向异性检测方法 |
CN115020099B (zh) * | 2022-05-26 | 2023-11-03 | 中国科学院金属研究所 | 一种增强NdFeB基永磁厚膜垂直磁各向异性的方法 |
CN115094380B (zh) * | 2022-06-02 | 2023-06-02 | 山东麦格智芯机电科技有限公司 | 一种FeCoCr磁性材料及其制备方法和应用 |
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US11264557B2 (en) * | 2017-12-30 | 2022-03-01 | Integrated Silicon Solution, (Cayman) Inc. | High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices |
CN110021702B (zh) * | 2019-03-05 | 2020-05-12 | 北京科技大学 | 一种快速提高垂直磁各向异性的方法 |
CN112864308B (zh) * | 2019-11-12 | 2023-04-28 | 上海磁宇信息科技有限公司 | 磁性隧道结结构及磁性随机存储器 |
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Effective date of registration: 20240701 Address after: 612a-16, 6th Floor, No. 2 Sanhua Road, Qixing Street, Xinchang County, Shaoxing City, Zhejiang Province, 312599 Patentee after: Zhejiang Mage Smart Core Technology Co.,Ltd. Country or region after: China Address before: 528200 room 245, 2nd floor, No.65, Hengjiang section, Guangfo road, Yanbu, Dali Town, Nanhai District, Foshan City, Guangdong Province Patentee before: Guangdong Maige Zhixin Precision Instrument Co.,Ltd. Country or region before: China |
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Address after: Room 101-12, East Side of Building 1, Xinchang Gaochuang Zhizao Science and Technology Park, Chengtan Street, Xinchang County, Shaoxing City, Zhejiang Province (Address Application) Patentee after: Zhejiang Mage Smart Core Technology Co.,Ltd. Country or region after: China Address before: 612a-16, 6th Floor, No. 2 Sanhua Road, Qixing Street, Xinchang County, Shaoxing City, Zhejiang Province, 312599 Patentee before: Zhejiang Mage Smart Core Technology Co.,Ltd. Country or region before: China |
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