CN113529024B - Membrane material for rapidly killing coronaviruses and bacteria and preparation method thereof - Google Patents
Membrane material for rapidly killing coronaviruses and bacteria and preparation method thereof Download PDFInfo
- Publication number
- CN113529024B CN113529024B CN202110777026.7A CN202110777026A CN113529024B CN 113529024 B CN113529024 B CN 113529024B CN 202110777026 A CN202110777026 A CN 202110777026A CN 113529024 B CN113529024 B CN 113529024B
- Authority
- CN
- China
- Prior art keywords
- layer
- film material
- setting
- angstrom
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 title claims abstract description 346
- 239000012528 membrane Substances 0.000 title claims abstract description 100
- 230000002147 killing effect Effects 0.000 title claims abstract description 46
- 241000894006 Bacteria Species 0.000 title claims abstract description 41
- 241000711573 Coronaviridae Species 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 230000000415 inactivating effect Effects 0.000 claims abstract description 131
- 238000001179 sorption measurement Methods 0.000 claims abstract description 118
- 230000002779 inactivation Effects 0.000 claims abstract description 82
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 39
- 150000003624 transition metals Chemical group 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910021536 Zeolite Inorganic materials 0.000 claims abstract description 20
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical group O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000010457 zeolite Substances 0.000 claims abstract description 20
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 18
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 13
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 12
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 12
- 150000002602 lanthanoids Chemical class 0.000 claims abstract description 11
- 238000011065 in-situ storage Methods 0.000 claims abstract description 3
- 238000001704 evaporation Methods 0.000 claims description 277
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 253
- 230000008020 evaporation Effects 0.000 claims description 186
- 229910052786 argon Inorganic materials 0.000 claims description 143
- 238000004544 sputter deposition Methods 0.000 claims description 118
- 150000002500 ions Chemical class 0.000 claims description 72
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 57
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 57
- 239000001301 oxygen Substances 0.000 claims description 56
- 229910052760 oxygen Inorganic materials 0.000 claims description 56
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 45
- -1 gauze Substances 0.000 claims description 39
- 239000007789 gas Substances 0.000 claims description 37
- 239000004744 fabric Substances 0.000 claims description 19
- 229910052725 zinc Inorganic materials 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- 229910001220 stainless steel Inorganic materials 0.000 claims description 14
- 229910044991 metal oxide Inorganic materials 0.000 claims description 13
- 239000004745 nonwoven fabric Substances 0.000 claims description 12
- 229920000742 Cotton Polymers 0.000 claims description 11
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 11
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 10
- 238000007664 blowing Methods 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 10
- 229910052763 palladium Inorganic materials 0.000 claims description 9
- 239000004677 Nylon Substances 0.000 claims description 8
- 239000002585 base Substances 0.000 claims description 8
- 229910052791 calcium Inorganic materials 0.000 claims description 8
- 229920001778 nylon Polymers 0.000 claims description 8
- 239000003755 preservative agent Substances 0.000 claims description 8
- 230000002335 preservative effect Effects 0.000 claims description 8
- 229910052684 Cerium Inorganic materials 0.000 claims description 7
- 229910052746 lanthanum Inorganic materials 0.000 claims description 7
- 229910052755 nonmetal Inorganic materials 0.000 claims description 7
- 229910052788 barium Inorganic materials 0.000 claims description 6
- 229910052744 lithium Inorganic materials 0.000 claims description 6
- 229910052700 potassium Inorganic materials 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 238000009423 ventilation Methods 0.000 claims description 4
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 3
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 241000700605 Viruses Species 0.000 abstract description 21
- 239000011159 matrix material Substances 0.000 abstract description 6
- 229910000314 transition metal oxide Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 423
- 239000000956 alloy Substances 0.000 description 159
- 229910045601 alloy Inorganic materials 0.000 description 158
- 230000004048 modification Effects 0.000 description 99
- 238000012986 modification Methods 0.000 description 99
- 239000010949 copper Substances 0.000 description 61
- 239000011701 zinc Substances 0.000 description 57
- 230000008569 process Effects 0.000 description 39
- 238000010549 co-Evaporation Methods 0.000 description 29
- 238000010926 purge Methods 0.000 description 16
- 239000002245 particle Substances 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 11
- 230000003197 catalytic effect Effects 0.000 description 8
- 229910016551 CuPt Inorganic materials 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000001954 sterilising effect Effects 0.000 description 7
- 238000004659 sterilization and disinfection Methods 0.000 description 7
- 239000002131 composite material Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 229910052748 manganese Inorganic materials 0.000 description 5
- 239000007783 nanoporous material Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000013077 target material Substances 0.000 description 5
- 229910019887 RuMo Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000012466 permeate Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 102000004169 proteins and genes Human genes 0.000 description 4
- 108090000623 proteins and genes Proteins 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000010408 sweeping Methods 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 239000007888 film coating Substances 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910017727 AgNi Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910016525 CuMo Inorganic materials 0.000 description 2
- 229910003336 CuNi Inorganic materials 0.000 description 2
- 229910002535 CuZn Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 150000001413 amino acids Chemical class 0.000 description 2
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 2
- 230000000844 anti-bacterial effect Effects 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 210000000170 cell membrane Anatomy 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000036541 health Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 229910000311 lanthanide oxide Inorganic materials 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001699 photocatalysis Effects 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- XGVXKJKTISMIOW-ZDUSSCGKSA-N simurosertib Chemical compound N1N=CC(C=2SC=3C(=O)NC(=NC=3C=2)[C@H]2N3CCC(CC3)C2)=C1C XGVXKJKTISMIOW-ZDUSSCGKSA-N 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- VCGRFBXVSFAGGA-UHFFFAOYSA-N (1,1-dioxo-1,4-thiazinan-4-yl)-[6-[[3-(4-fluorophenyl)-5-methyl-1,2-oxazol-4-yl]methoxy]pyridin-3-yl]methanone Chemical compound CC=1ON=C(C=2C=CC(F)=CC=2)C=1COC(N=C1)=CC=C1C(=O)N1CCS(=O)(=O)CC1 VCGRFBXVSFAGGA-UHFFFAOYSA-N 0.000 description 1
- KVCQTKNUUQOELD-UHFFFAOYSA-N 4-amino-n-[1-(3-chloro-2-fluoroanilino)-6-methylisoquinolin-5-yl]thieno[3,2-d]pyrimidine-7-carboxamide Chemical compound N=1C=CC2=C(NC(=O)C=3C4=NC=NC(N)=C4SC=3)C(C)=CC=C2C=1NC1=CC=CC(Cl)=C1F KVCQTKNUUQOELD-UHFFFAOYSA-N 0.000 description 1
- CYJRNFFLTBEQSQ-UHFFFAOYSA-N 8-(3-methyl-1-benzothiophen-5-yl)-N-(4-methylsulfonylpyridin-3-yl)quinoxalin-6-amine Chemical compound CS(=O)(=O)C1=C(C=NC=C1)NC=1C=C2N=CC=NC2=C(C=1)C=1C=CC2=C(C(=CS2)C)C=1 CYJRNFFLTBEQSQ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 102000004190 Enzymes Human genes 0.000 description 1
- 108090000790 Enzymes Proteins 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- AYCPARAPKDAOEN-LJQANCHMSA-N N-[(1S)-2-(dimethylamino)-1-phenylethyl]-6,6-dimethyl-3-[(2-methyl-4-thieno[3,2-d]pyrimidinyl)amino]-1,4-dihydropyrrolo[3,4-c]pyrazole-5-carboxamide Chemical compound C1([C@H](NC(=O)N2C(C=3NN=C(NC=4C=5SC=CC=5N=C(C)N=4)C=3C2)(C)C)CN(C)C)=CC=CC=C1 AYCPARAPKDAOEN-LJQANCHMSA-N 0.000 description 1
- 208000034530 PLAA-associated neurodevelopmental disease Diseases 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000001580 bacterial effect Effects 0.000 description 1
- 230000003385 bacteriostatic effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 230000006315 carbonylation Effects 0.000 description 1
- 238000005810 carbonylation reaction Methods 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000003651 drinking water Substances 0.000 description 1
- 235000020188 drinking water Nutrition 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000002158 endotoxin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229920006008 lipopolysaccharide Polymers 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000813 microbial effect Effects 0.000 description 1
- 244000005700 microbiome Species 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000036542 oxidative stress Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- DCWXELXMIBXGTH-UHFFFAOYSA-N phosphotyrosine Chemical compound OC(=O)C(N)CC1=CC=C(OP(O)(O)=O)C=C1 DCWXELXMIBXGTH-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 1
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 1
- 210000000605 viral structure Anatomy 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01N—PRESERVATION OF BODIES OF HUMANS OR ANIMALS OR PLANTS OR PARTS THEREOF; BIOCIDES, e.g. AS DISINFECTANTS, AS PESTICIDES OR AS HERBICIDES; PEST REPELLANTS OR ATTRACTANTS; PLANT GROWTH REGULATORS
- A01N25/00—Biocides, pest repellants or attractants, or plant growth regulators, characterised by their forms, or by their non-active ingredients or by their methods of application, e.g. seed treatment or sequential application; Substances for reducing the noxious effect of the active ingredients to organisms other than pests
- A01N25/08—Biocides, pest repellants or attractants, or plant growth regulators, characterised by their forms, or by their non-active ingredients or by their methods of application, e.g. seed treatment or sequential application; Substances for reducing the noxious effect of the active ingredients to organisms other than pests containing solids as carriers or diluents
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01N—PRESERVATION OF BODIES OF HUMANS OR ANIMALS OR PLANTS OR PARTS THEREOF; BIOCIDES, e.g. AS DISINFECTANTS, AS PESTICIDES OR AS HERBICIDES; PEST REPELLANTS OR ATTRACTANTS; PLANT GROWTH REGULATORS
- A01N59/00—Biocides, pest repellants or attractants, or plant growth regulators containing elements or inorganic compounds
- A01N59/16—Heavy metals; Compounds thereof
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01N—PRESERVATION OF BODIES OF HUMANS OR ANIMALS OR PLANTS OR PARTS THEREOF; BIOCIDES, e.g. AS DISINFECTANTS, AS PESTICIDES OR AS HERBICIDES; PEST REPELLANTS OR ATTRACTANTS; PLANT GROWTH REGULATORS
- A01N59/00—Biocides, pest repellants or attractants, or plant growth regulators containing elements or inorganic compounds
- A01N59/16—Heavy metals; Compounds thereof
- A01N59/20—Copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/085—Oxides of iron group metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A50/00—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE in human health protection, e.g. against extreme weather
- Y02A50/30—Against vector-borne diseases, e.g. mosquito-borne, fly-borne, tick-borne or waterborne diseases whose impact is exacerbated by climate change
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Agronomy & Crop Science (AREA)
- Pest Control & Pesticides (AREA)
- Plant Pathology (AREA)
- Dentistry (AREA)
- Wood Science & Technology (AREA)
- Zoology (AREA)
- Environmental Sciences (AREA)
- Inorganic Chemistry (AREA)
- Toxicology (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
Abstract
The invention discloses a membrane material for rapidly killing coronaviruses and bacteria, which comprises a matrix; an adsorption layer and an inactivation layer formed by in-situ growth are arranged on the surface of the matrix, wherein the adsorption layer is zeolite, gamma-aluminum oxide, active carbon, zeolite containing doping elements, gamma-aluminum oxide containing doping elements or active carbon containing doping elements; wherein the proportion of the doping elements is less than or equal to 20%; the doping element is a transition metal or alkali metal or lanthanide metal with d-electron number of 10; the inactivating layer is a transition metal oxide layer; the adsorption layer has the capability of adsorbing viruses and bacteria, so that the viruses and the bacteria can quickly move to the inactivation layer, and the killing rate of the inactivation layer on the viruses and the bacteria is improved; the invention also discloses a preparation method of the film material.
Description
Technical Field
The invention relates to the technical field of membrane materials, in particular to a membrane material capable of rapidly killing coronaviruses and bacteria and a preparation method thereof.
Background
With the development of society, the living standard of people is improved, more and more new materials enter the daily life of people or the research work of technological staff, and especially various articles related to the health of human bodies, people pay more attention to the health and safety conditions of the people. The articles are polluted by bacteria in the air in the use process of people, so that a plurality of unhealthy factors and interferences are brought to the life of people, and in order to solve the interferences, a large amount of film materials are used for inhibiting the bacteria and killing the bacteria. The film layer material generally comprises a substrate and a film layer arranged on the substrate, for example, chinese patent document CN206666906U discloses a nano metal film composite silk fabric, which comprises a base fabric and a metal coating layer covered on the surface of the base fabric, wherein the metal coating layer comprises discontinuous point-shaped nano particles attached on the surface of the base fabric through a magnetron sputtering coating technology and a transfer printing technology, and the nano particles are nano anions or nano aluminum ions, and the metal particles are covered on the base fabric so as to have a bactericidal effect; as another example, chinese patent document CN104129108A discloses a composite material capable of preventing and eliminating microbial contamination in drinking water and a preparation method thereof, wherein, a reticular polyester filtering sponge is used as a base material to perform vacuum sputtering to form a metal film, and then chemical fiber mesh fabrics are compounded into a whole, and the chemical fiber mesh fabrics are attached to the reticular polyester filtering sponge after the metal film is plated on one side or both sides to form a multi-layer composite structure, wherein the composite material uses metal (silver, titanium and copper) ions on the surface to contact with molecules in water, so as to achieve a sterilization effect; as another example, chinese patent document CN103935081a discloses a breathable material with inorganic bactericidal and bacteriostatic effects and a preparation method thereof, and the breathable material matrix is: the chemical fiber cloth, the non-woven fabrics and the open-pore sponge breathable material are sequentially provided with a zinc layer film, a silver layer film and a zinc oxide film which are formed by magnetron sputtering on the surface of a breathable material substrate, wherein the zinc layer film and the silver layer film are beneficial sterilization materials, and the zinc oxide film can slow down the oxidation speed of the zinc layer film and the silver layer film and form a stable structure. As another example, chinese patent document CN101054268A discloses a solar control low-emissivity, ultraviolet cut-off, photocatalytic sterilization multifunctional coated glass and a preparation method thereof, wherein the photocatalytic sterilization film layer is anatase titanium dioxide, and the thickness of the film layer is 10-500nm. The structure of the prior film material is that the prior film material is a metal element layer or a metal oxide layer with sterilization effect, and the selected elements are selected from the category of transition metals, however, the film material after sputtering a certain amount of sterilization elements is found to be not ideal in sterilization effect, and coronaviruses are killed in a short time, so that a novel film material capable of rapidly killing bacteria and coronaviruses is needed.
Disclosure of Invention
In order to solve the technical problems, the invention provides a membrane material for rapidly killing coronaviruses and bacteria, which comprises a matrix; the surface of the matrix is provided with an adsorption layer and an inactivation layer which are formed by in-situ growth, wherein the adsorption layer is zeolite, gamma-alumina, active carbon, zeolite containing doped element oxide, gamma-alumina containing doped element oxide or active carbon containing doped element oxide; wherein the mass percentage of the doping element is less than or equal to 20wt%, preferably 0.5-20wt%, more preferably 5-18wt%; the doping element is a first transition metal or a first alkali metal or a first lanthanide metal or a first alkaline earth metal with d-electron number of 10; wherein the first transition metal with the d-band electron number of 10 is Zn, ag, au, cu or Pd; the first alkali metal is K or Na or Li; the first alkaline earth metal is Ca or Mg or Ba; the first lanthanide metal is La or Ce.
The adsorption layer is of a micro-nano porous material structure and has a certain specific surface area, wherein the specific surface area is more than or equal to 0.5m 2 /g, further, greater than 10m 2 Preferably,/g; the adsorption layer can adsorb viruses and bacteria, so that the viruses and the bacteria can quickly move to the inactivation layer, and the inactivation layer can kill the viruses and the bacteria. Doping in the adsorption layer can improve the efficiency of the adsorption layer, and doping of the oxide doped with elements can improve the specific surface area and the activity of unit active sites by forming composite active sites, so that the adsorption capacity of the adsorption layer on viruses and bacteria is improved, and the killing of the inactivation layer on the viruses and bacteria is accelerated. The inactivation layer is of a micro-nano porous material structure, and can partially permeate into the inactivation layer in the preparation process, and the deepest inactivation layer is not more than 90nm; at the same time, the inactivating layer can provide a certain adsorption capacity for catalyzing The killing efficiency is further improved in the process.
Further, the thickness of the adsorption layer is 10-80nm.
Further, the inactivating layer is a single metal oxide of the second transition metal or a multi-metal oxide of the second transition metal; the second transition metal is Zn, ag, au, cu, pd, pt, ni, rh, ru, co, fe, mn, mo, cr.
Preferably, in the inactivating layer, the d-electron number of the at least one second transition metal is 10, and the second transition metal having the d-electron number of 10 is Zn, ag, au, cu or Pd.
Further preferably, when the inactivating layer is a multi-metal oxide of a second transition metal, the weight ratio of one second transition metal with d-electron number of 10 to other second transition metals is 15:1.8-85:20 or 15:1.8:1.2-85:20:8; wherein the above proportions correspond to 2-3 kinds of second transition metals, respectively.
Further, the inactivating layer further comprises a second lanthanide metal oxide or a second alkali metal oxide or a second alkaline earth metal oxide or a non-metal oxide or a carbide of the second transition metal; wherein the second lanthanide metal is La or Ce, the second alkali metal is K or Na or Li, the second alkaline earth metal is Ca or Ba, and the nonmetal is Si or B; wherein the mass percentage of the second lanthanide metal or the second alkali metal or the second alkaline earth metal or the non-metal is less than or equal to 7wt%, preferably 1-7wt%, more preferably 3-5wt%. The carbide of the second transition metal is prepared by doping C into a target material or a film material in the preparation process, and finally forming partial carbide, wherein the carbide can stabilize the porous structure stability of the inactivation layer.
Further, the thickness of the inactivating layer is 10-130nm.
Further, the substrate is non-woven fabric, stainless steel wire mesh, metal plate, cotton cloth, gauze, preservative film, release film, nylon mesh, PLA, PAN or PBS.
The invention also provides a preparation method of the membrane material for rapidly killing coronaviruses and bacteria, and the adsorptionThe layer is formed on the surface of the substrate by means of electron gun evaporation or resistance evaporation, and specifically comprises the following steps: vacuum is pumped to 3.0-8.0 x 10 -3 Pa, introducing argon gas of 15-20sccm to maintain the vacuum degree at 5.0 x 10 -3 -3.0*10 -2 Pa, turning on the ion source, setting ion source parameter at 200V, current at 4.0-5.0A, argon ion ionization blowing substrate for 30-60s, reducing argon ventilation, and introducing 0-80sccm oxygen to maintain vacuum degree at 9.0×10 -3 -2.5*10 -2 Pa; setting the current of electron gun or resistance at 50-350mA, keeping the evaporation rate at 3.0-10.0 angstrom/s, and evaporating to obtain the adsorption layer. Of course, multiple sources of co-steaming, such as dual sources of co-steaming, etc., may be employed in order to obtain the corresponding product faster.
Further, after the evaporation of the adsorption layer, the ion source is continuously started, argon and oxygen are continuously introduced, and the vacuum degree is continuously maintained at 9.0 x 10 -3 -2.5*10 -2 Pa; the ion source parameter is set at 220V, and the current is 5.6-6.5A; setting the current of an electron gun or the resistance current at 4-350mA, keeping the evaporation rate at 0.1-3.0 angstrom/s, evaporating to obtain an inactivated layer, and further obtaining a film material; wherein the inactivating layer partially permeates the adsorbing layer. The evaporation inactivating layer can adopt single-source evaporation or multi-source co-evaporation according to the film material or the target material, and of course, in order to improve the efficiency, the multi-source co-evaporation can be performed on the single film material or the single target material.
The invention also provides a preparation method of the film material for rapidly killing coronaviruses and bacteria, wherein the adsorption layer is formed on the surface of the matrix in a magnetron sputtering mode, and the preparation method comprises the following steps: vacuum is pumped to 3.0-8.0 x 10 -3 Pa, introducing argon gas of 15-20sccm to maintain the vacuum degree at 5.0 x 10 -3 -3.0*10 -2 Pa, turning on the ion source, setting ion source parameter at 200V, current at 4.0-5.0A, argon ion ionization blowing substrate for 30-60s, reducing argon ventilation, and introducing 0-80sccm oxygen to maintain vacuum degree at 9.0×10 -3 -2.5*10 -2 Pa; controlling the magnetron sputtering power to be 50-400W, keeping the sputtering rate to be 3.0-10.0 angstrom/s, and sputtering to obtain the adsorption layer. Of course, in order to obtain the corresponding product faster Multiple source sputtering, such as dual source sputtering, etc., may be employed.
Further, after sputtering to form an adsorption layer, continuing to start the ion source, continuing to introduce argon and oxygen, and continuing to maintain the vacuum degree at 9.0 x 10 -3 -2.5*10 -2 Pa; the ion source parameter is set at 220V, and the current is 5.6-6.5A; controlling the magnetron sputtering power to be 50-400W, keeping the sputtering rate to be 0.1-3.0 angstrom/s, and sputtering to obtain an inactivated layer, thereby obtaining a film material; wherein the inactivating layer partially permeates the adsorbing layer. The sputtering inactivating layer can adopt single-source sputtering or multi-source sputtering according to the film material or the target material, and certainly, in order to improve the efficiency, the multi-source sputtering can be carried out on the single film material or the single target material.
The substrate is cleaned, dried and pretreated before being placed into a vacuum evaporator or a sputtering coater.
Wherein oxygen is not introduced during the process of preparing the activated carbon or the adsorption layer containing the dopant.
The problem regarding the thickness of the inactivating layer is a display value of a vacuum evaporator or a sputter coater, which includes the sum of the thickness penetrating into the adsorbing layer and the thickness above the adsorbing layer.
Compared with the prior art, the technical scheme of the invention has the following advantages:
(1) According to the membrane material for rapidly killing coronaviruses and bacteria, the adsorption layer is arranged between the base material and the inactivation layer, and is of a micro-nano porous material structure, so that the membrane material has a certain specific surface area and has adsorption capacity on viruses and bacteria, so that the viruses and bacteria are rapidly enriched in the inactivation layer, and the killing of the viruses and bacteria by the inactivation layer is accelerated in a short time; meanwhile, the inactivating layer can partially infiltrate into the gaps of the adsorption layer, so that the structure is more stable; the inactivation layer is a nano particle structure, based on the catalytic function, the surface releases different kinds of active oxygen groups, and the active oxygen groups participate in different kinds of oxidation or reduction reactions, specifically, the DNA is interfered by oxidizing unsaturated fatty acid and amino acid; meanwhile, the metal ions can lead microorganisms to lose the internal balance, can be combined with DNA, cross-connect different DNA chains, damage cells and virus components, finally lead the spiral structure of the DNA to be changed, thereby inactivating the viruses and the cells, and can neutralize charges generated by lipopolysaccharide, release a large amount of hydroxyl free radicals to dissolve DNA, cell membranes and the like, and simultaneously, the metal ions catalyze and oxidize amino acid side chains to lead carbonyl groups to be combined with proteins, and the carbonylation degree in protein molecules is a sign of oxidative stress damage of the proteins, and can lead the catalytic functions of enzymes of bacteria and viruses to disappear to a higher degree, thereby causing protein decomposition; meanwhile, nano metal oxide can cause the residue of phosphotyrosine to be dephosphorylated, thus inhibiting energy and signal transmission and interfering bacterial growth, thereby killing bacteria and viruses.
(2) According to the membrane material for rapidly killing coronaviruses and bacteria, a hydrogen overflow phenomenon is formed between the adsorption layer and the inactivation layer, hydrogen is transferred to an oxygen vacancy of the inactivation layer or the adsorption layer after the adsorption layer or the inactivation layer is dissociated, so that hydroxyl free radicals are formed, DNA, cell membranes and the like can be dissolved, and the killing effect is further improved.
(3) The doping element in the adsorption layer is the oxide of the first transition metal or the oxide of the first alkali metal or the oxide of the first alkaline earth metal or the oxide of the first lanthanide metal with the d-charge number of 10, and the chemical adsorption capacity of the adsorption layer is enhanced by doping the oxide of the element, so that the killing capacity of bacteria and viruses is improved. Further, the thickness of the adsorption layer is 10-80nm, and the adsorption effect of the adsorption layer with the thickness is best, so that the killing effect of the whole film material is best.
(4) The membrane material for rapidly killing coronaviruses and bacteria has the advantages that the inactivating layer is a single metal oxide or a multi-metal oxide of a second transition metal, and the multi-element material has the advantages that the alloy hybridization improves the electron-hole recombination rate, so that the carrier density is kept stable, the material performance is stabilized, the lattice distortion and defect effect are improved, more active sites are generated, the catalytic capability to bacteria and viruses is improved, and the killing efficiency is improved. Whether a single metal oxide or a multi-metal oxide, makes it difficult for viruses and bacteria to develop resistance to metals, further improving the killing efficiency.
(5) The membrane material for rapidly killing coronaviruses and bacteria provided by the invention has the advantages that the d-electron number of at least one second transition metal in the inactivation layer is 10, so that the chemical adsorption of the inactivation layer is not too strong and not too weak, the catalysis effect of the inactivation layer is maximum, the fundamental significance of the inactivation layer is avoided, if the chemical adsorption is too strong, the product cannot be desorbed, the catalytic inactivation material becomes a reactant, and the catalytic performance of the catalytic inactivation material is lost.
(6) The membrane material for rapidly killing coronaviruses and bacteria further comprises a second lanthanide oxide or a second alkali oxide or a non-metal oxide or a second alkaline earth oxide or a second transition metal carbide, so that the killing efficiency is further improved, for example, the second lanthanide oxide can store oxygen under the condition of oxygen enrichment and release oxygen ions under the condition of oxygen deficiency, the existence of oxygen in the inactivating layer is improved, and the killing efficiency of the inactivating layer is improved; the second alkali metal or the oxide of the second alkali earth metal has a certain killing effect on virus and bacteria, so that the killing efficiency of the inactivating layer is improved, the adsorption capacity of the material on the virus and bacteria is improved due to the increase of the cation concentration, and the killing efficiency is further improved; the non-metal oxide may increase the adsorption capacity of the inactivating layer, further increasing the killing efficiency.
(7) The thickness of the inactivation layer is 10-130nm, and the inactivation layer with the thickness achieves excellent inactivation performance, can optimally reduce material waste and realizes cost rationalization.
(8) According to the preparation method of the film material for rapidly killing coronaviruses and bacteria, disclosed by the invention, the film material is prepared by using an electron gun or a resistance evaporation or magnetron sputtering mode, and the film and a base material are strong in binding force by using an ion source in a film coating process, so that the service life of a product is ensured; meanwhile, a certain amount of argon is introduced in the purging process, and ionized into argon ions by an ion source to purge the substrate, so that the free energy and roughness of the surface of the material are improved while the surface of the substrate is cleaned, the film layer and the substrate are better combined, and the stability and the service life of the film layer material are improved; meanwhile, a certain amount of argon is introduced in the film coating process, and ionized into argon ions by an ion source to strike the film layer in the forming process, so that an amorphous-alloy material is formed, and therefore, the catalytic active sites are increased, the catalytic capability of an inactivation layer is improved, and meanwhile, the amorphous-alloy structure also increases the structural stability of the film layer material and is superior to that of a fully amorphous material; meanwhile, in the film coating process, the ion source is used for enabling the ionized degree of the evaporated film material to be higher, the reaction is easy to occur, the multi-element compound is formed, and meanwhile, the binding force between film layers can be improved, so that the film layer material is more stable.
(9) The preparation method of the membrane material for rapidly killing coronaviruses and bacteria is carried out by using an electron gun or a resistance evaporation or magnetron sputtering mode, and an inactivation layer is further formed on the adsorption layer by forming the adsorption layer of the micro-nano porous material structure, and the inactivation layer partially permeates into the adsorption layer to form a stable adsorption-killing composite membrane material, so that the killing efficiency of viruses and bacteria is improved.
Detailed Description
The following is a clear and complete description of the present invention, and it is apparent that the described embodiments are some, but not all, embodiments of the present invention. Other embodiments of the invention, which are encompassed by the present invention, are within the scope of the invention as would be within the skill of those of ordinary skill in the art without undue burden.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
In the following examples, the electron gun or resistor type vacuum evaporator was used: ZX1350; the model of the used magnetron sputtering coating machine is as follows: the JPG450 may, of course, also select other existing machine models. Meanwhile, the substrate used in the following embodiments is pretreated, for example, drying pretreatment, cleaning pretreatment and/or vacuum pretreatment are performed according to different materials, and the specific method is not specifically described, and the existing pretreatment can be adopted; the ion source is a hall ion source, although other ion sources may be used.
Example 1
Evaporating an adsorption layer with the thickness of 10nm and an inactivation layer with the thickness of 30nm on a non-woven fabric by an electron gun, wherein the adsorption layer uses zeolite with the granularity of 3mm as a film material, the inactivation layer uses Zn with the granularity of 1mm and the purity of 99% as the film material, and the evaporation process is as follows: placing the non-woven fabric and the film material into an evaporation machine, and vacuumizing a vacuum bin to 3.0 x 10 -3 Pa, introducing 15sccm argon gas to maintain the vacuum degree at 5.0x10 -3 Pa, turning on the ion source, setting the voltage to 200V and the current to 4.0A, ionizing argon to form argon ion to purge non-woven fabrics for 30s, adjusting the argon inlet amount to 6sccm, and introducing 30sccm of oxygen to maintain the vacuum degree at 9.0×10 - 3 Pa; setting the current of an electron gun corresponding to zeolite as 50mA, and evaporating at an evaporation rate of 3.0 angstrom/second to obtain an adsorption layer; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 5.6A, oxygen and argon are continuously introduced, and the vacuum degree is continuously maintained at 9.0 x 10 -3 Pa; setting the current of an electron gun corresponding to Zn to be 10mA and the evaporation rate to be 3.0 angstrom/second, and evaporating to obtain an inactivated layer to obtain a film material.
Example 2
Evaporating an adsorption layer with the thickness of 20nm and an inactivation layer with the thickness of 10nm on a stainless steel wire net by using a gamma type with the granularity of 4mm The aluminum oxide is used as a film material, the Ag with the granularity of 2mm and the purity of 99.2% is used as the film material for the inactivation layer, and the evaporation process is as follows: placing the stainless steel wire mesh and the film material into an evaporation machine, and vacuumizing a vacuum bin to 4.0 x 10 -3 Pa, introducing 18sccm argon gas to maintain the vacuum degree at 7.0X10 -3 Pa, turning on the ion source, setting the voltage to 200V and the current to 5.0A, ionizing argon to form argon ion, blowing the argon ion to clean the stainless steel wire mesh for 40s, adjusting the argon gas inlet amount to 7sccm, and introducing 40sccm of oxygen to maintain the vacuum degree to 1.0 x 10 -2 Pa; setting the resistance current corresponding to gamma-type aluminum oxide as 100mA, evaporating at the evaporation rate of 5.0 angstrom/s, and evaporating to obtain an adsorption layer; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 6.0A, oxygen and argon are continuously introduced, and the vacuum degree is continuously maintained to be 1.0 x 10 -2 Pa; setting the resistance current corresponding to Ag as 100mA and the evaporation rate as 0.1 angstrom/second, evaporating to obtain an inactivating layer, and further obtaining the film material.
Example 3
Evaporating an adsorption layer with the thickness of 30nm and an inactivation layer with the thickness of 20nm on a metal plate (such as a stainless steel plate) by an electron gun, wherein the adsorption layer uses active carbon with the granularity of 5mm as a film material, the inactivation layer uses Au with the granularity of 3mm and the purity of 99.4% as the film material, and the evaporation process is as follows: placing the metal plate and the film material into an evaporation machine, and vacuumizing a vacuum bin to 5.0 x 10 -3 Pa, introducing 20sccm argon gas to maintain the vacuum degree at 9.0X10 -3 Pa, turning on the ion source, setting the voltage to 200V and the current to 4.5A, ionizing argon to form argon ion, purging the metal plate for 50s, adjusting the argon gas inlet amount to 8sccm, and maintaining the vacuum degree at 2.0 x 10 -2 Pa; setting the current of an electron gun corresponding to the activated carbon to be 150mA, and evaporating at the evaporation rate of 7.0 angstrom/s to obtain an adsorption layer by evaporation; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 6.5A, argon is continuously introduced, 50sccm of oxygen is continuously introduced, and the vacuum degree is continuously maintained at 2.0 x 10 -2 Pa; setting the current of an electron gun corresponding to Au to be 150mA and the evaporation rate to be 0.5 angstrom/second, and evaporating to obtain an inactivated layer to obtain a film material.
Example 4
An adsorption layer with the thickness of 40nm and an inactivation layer with the thickness of 30nm are subjected to resistance evaporation on cotton cloth, zeolite with the granularity of 1mm and containing 0.5wt% of Zn is used as a membrane material for the adsorption layer, cu with the granularity of 1mm and the purity of 99.6% is used as a membrane material for the inactivation layer, and the evaporation process is as follows: putting cotton cloth and film material into a vapor deposition machine, and vacuumizing a vacuum bin to 6.0 x 10 -3 Pa, introducing 15sccm argon gas to maintain the vacuum degree at 1.0X10 -2 Pa, turning on the ion source, setting the voltage to 200V and the current to 4.0A, ionizing argon to form argon ion to purge cotton cloth for 60s, adjusting the argon inlet amount to 9sccm, and introducing 60sccm of oxygen to maintain the vacuum degree at 2.5×10 -2 Pa; setting the resistance current corresponding to zeolite as 200mA, evaporating at the evaporation rate of 9.0 angstrom/second, and evaporating to obtain an adsorption layer; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 6.5A, oxygen and argon are continuously introduced, and the vacuum degree is continuously maintained at 2.5 x 10 -2 Pa; setting the resistance current corresponding to Cu to be 350mA and the evaporation rate to be 1.0 angstrom/second, and evaporating to obtain an inactivated layer to obtain a film material.
Example 5
An adsorption layer with the thickness of 50nm and an inactivation layer with the thickness of 40nm are evaporated on gauze by an electron gun, gamma-type aluminum oxide with the granularity of 2mm and containing 1wt% of Ag is used as a membrane material for the adsorption layer, pd with the granularity of 2mm and the purity of 99.8% is used as the membrane material for the inactivation layer, and the evaporation process is as follows: placing gauze and membrane material into an evaporator, and vacuumizing a vacuum bin to 7.0 x 10 -3 Pa, introducing 18sccm argon gas to maintain the vacuum degree at 2.0X10 -2 Pa, turning on the ion source, setting the voltage to 200V and the current to 4.5A, ionizing argon to form argon ion sweeping gauze for 30s, adjusting the argon inlet amount to 6sccm, and introducing 70sccm of oxygen to maintain the vacuum degree at 2.5×10 -2 Pa; setting the current of an electron gun corresponding to gamma-type aluminum oxide as 250mA, evaporating at the evaporation rate of 10.0 angstrom/s, and evaporating to obtain an adsorption layer; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 6.0A, oxygen and argon are continuously introduced, and the vacuum degree is continuously maintained at 2.5 x 10 -2 Pa; setting current of electron gun corresponding to Pd as 200mA and evaporation rate as 1.5 angstrom/second, evaporating to obtain inactivating layer, and feedingThus obtaining the film material.
Example 6
The preservative film is subjected to resistance evaporation to form an adsorption layer with the thickness of 50nm and an inactivation layer with the thickness of 40nm, wherein the adsorption layer uses active carbon with the granularity of 3mm and containing 5wt% of Au as a film material, the inactivation layer uses Pt with the granularity of 3mm and the purity of 99.0% as a film material, and the evaporation process is as follows: placing the preservative film and the film material into an evaporation machine, and vacuumizing a vacuum bin to 8.0 x 10 -3 Pa, introducing 20sccm argon gas to maintain the vacuum degree at 3.0x10 -2 Pa, turning on the ion source, setting the voltage to 200V and the current to 5.0A, ionizing argon to form argon ion sweeping preservative film 40s, adjusting the argon inlet amount to 7sccm, and maintaining the vacuum degree to 2.0 x 10 -2 Pa; setting the resistance current corresponding to the activated carbon as 300mA, evaporating at the evaporation rate of 9.0 angstrom/s, and evaporating to obtain an adsorption layer; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 5.6A, argon is continuously introduced, 80sccm of oxygen is continuously introduced, and the vacuum degree is continuously maintained at 2.0 x 10 -2 Pa; setting the resistance current corresponding to Pt as 220mA and the evaporation rate as 2.0 angstrom/second, evaporating to obtain an inactivated layer, and further obtaining the film material.
Example 7
Evaporating an adsorption layer with the thickness of 70nm and an inactivation layer with the thickness of 60nm on a release film by an electron gun, wherein the adsorption layer uses zeolite with the granularity of 4mm and containing 10wt% Cu as a film material, the inactivation layer uses Ni with the granularity of 1mm and the purity of 99.2% as the film material, and the evaporation process is as follows: placing the release film and the film material into an evaporation machine, and vacuumizing a vacuum bin to 7.0 x 10 -3 Pa, introducing 15sccm argon gas to maintain the vacuum degree at 9.0X10 -3 Pa, turning on the ion source, setting the voltage to 200V and the current to 4.0A, ionizing argon to form argon ion, blowing the release film for 50s, adjusting the argon gas inlet amount to 8sccm, and introducing 30sccm of oxygen to maintain the vacuum degree at 9.0 x 10 -3 Pa; setting the current of an electron gun corresponding to zeolite as 350mA and the evaporation rate as 7.0 angstrom/second, and evaporating to obtain an adsorption layer; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 6.5A, oxygen and argon are continuously introduced, and the vacuum degree is continuously maintained at 9.0 x 10 -3 Pa; setting electrons corresponding to NiThe gun current is 100mA, the evaporation rate is 2.5 angstrom/second, and the inactivating layer is obtained by evaporation, so that the film material is obtained.
Example 8
An adsorption layer with the thickness of 80nm and an inactivation layer with the thickness of 70nm are subjected to resistance evaporation on a nylon net, gamma-type aluminum oxide with the granularity of 5mm and 15wt% Pd is used as a membrane material for the adsorption layer, rh with the granularity of 2mm and the purity of 99.4% is used as a membrane material for the inactivation layer, and the evaporation process is as follows: placing nylon net and film material into evaporator, vacuum-pumping vacuum chamber to 6.0 x 10 -3 Pa, introducing 18sccm argon gas to maintain the vacuum degree at 1.0X10 -2 Pa, turning on the ion source, setting the voltage to 200V and the current to 4.5A, ionizing argon to form argon ion to purge nylon net for 60s, adjusting the argon inlet amount to 9sccm, and introducing 40sccm of oxygen to maintain the vacuum degree at 1.0 x 10 -2 Pa; setting the resistance current corresponding to gamma-type aluminum oxide as 50mA, evaporating at the evaporation rate of 5.0 angstrom/s, and evaporating to obtain an adsorption layer; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 6.0A, oxygen and argon are continuously introduced, and the vacuum degree is continuously maintained to be 1.0 x 10 -2 Pa; setting the resistance current corresponding to Rh to be 240mA and the evaporation rate to be 3.0 angstrom/second, and evaporating to obtain an inactivated layer to obtain a film material.
Example 9
Evaporating an adsorption layer with the thickness of 70nm and an inactivation layer with the thickness of 80nm on PLA by an electron gun, wherein the adsorption layer uses active carbon with the granularity of 4mm and containing 20wt% of K as a film material, the inactivation layer uses Ru with the granularity of 3mm and the purity of 99.6% as the film material, and the evaporation process is as follows: placing PLA and film material into an evaporator, vacuumizing a vacuum bin to 5.0 x 10 -3 Pa, introducing 20sccm argon gas to maintain the vacuum degree at 9.0X10 -3 Pa, turning on the ion source, setting the voltage to 200V and the current to 4.0A, ionizing argon to form argon ion, blowing PLA for 30s, adjusting the argon inlet amount to 6sccm, and maintaining the vacuum degree at 9.0 x 10 -3 Pa; setting the current of an electron gun corresponding to the active carbon as 100mA, evaporating at a rate of 3.0 angstrom/second to obtain an adsorption layer, and placing the active carbon in two evaporation sources with consistent evaporation parameters in the evaporation process to perform double-source co-evaporationSteaming; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 5.6A, argon is continuously introduced, 50sccm of oxygen is continuously introduced, and the vacuum degree is continuously maintained at 9.0 x 10 -3 Pa; setting the current of an electron gun corresponding to Ru to be 260mA, evaporating at the evaporation rate of 0.5 angstrom/second to obtain an inactivated layer, and further obtaining a film material.
Example 10
An adsorption layer with the thickness of 60nm and an inactivation layer with the thickness of 90nm are subjected to resistance evaporation on PAN, wherein the adsorption layer uses active carbon with the granularity of 3mm and containing 18wt% of Mg as a film material, the inactivation layer uses Co with the granularity of 1mm and the purity of 99.0% as the film material, and the evaporation process is as follows: placing PAN and film material into an evaporator, and vacuumizing a vacuum bin to 4.0 x 10 -3 Pa, introducing 18sccm argon gas to maintain the vacuum degree at 7.0X10 -3 Pa, turning on the ion source, setting the voltage to 200V and the current to 4.5A, ionizing argon to form argon ion to purge PAN40s, adjusting the argon inlet amount to 7sccm, and maintaining the vacuum degree at 9.0×10 -3 Pa; setting the resistance current corresponding to the active carbon to be 150mA, evaporating at the evaporation rate of 5.0 angstrom/second to obtain an adsorption layer, and placing the active carbon in two evaporation sources with consistent evaporation parameters in the evaporation process to perform double-source co-evaporation; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 6.0A, argon is continuously introduced, 60sccm of oxygen is continuously introduced, and the vacuum degree is continuously maintained at 9.0 x 10 - 3 Pa; setting the resistance current corresponding to Co to be 180mA and the evaporation rate to be 1.0 angstrom/second, evaporating to obtain an inactivated layer, and further obtaining a film material.
Example 11
An adsorption layer with the thickness of 60nm and an inactivation layer with the thickness of 90nm are evaporated on PBS by an electron gun, gamma-type aluminum oxide with the granularity of 2mm and 15wt% of Ba is used as a film material for the adsorption layer, fe with the granularity of 2mm and the purity of 99.2% is used as the film material for the inactivation layer, and the evaporation process is as follows: placing PBS and film material into a vapor deposition machine, and vacuumizing a vacuum bin to 3.0 x 10 -3 Pa, introducing 20sccm argon gas to maintain the vacuum degree at 5.0x10 -3 Pa, turning on the ion source, setting the voltage to 200V and the current to 5.0A, ionizing argon to form argon ion to purge PBS for 50s, adjusting the argon gas inlet amount to 8sccm, and introducing 70sccm of oxygen gas to maintain the vacuum degree at 1.0×10 -2 Pa; setting the current of an electron gun corresponding to gamma-type aluminum oxide as 200mA, evaporating at the evaporation rate of 3.0 angstrom/second, and evaporating to obtain an adsorption layer, wherein in the evaporation process, gamma-type aluminum oxide is placed in two evaporation sources, and the evaporation parameters are consistent, and performing double-source co-evaporation; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 6.5A, oxygen and argon are continuously introduced, and the vacuum degree is continuously maintained to be 1.0 x 10 -2 Pa; setting the current of an electron gun corresponding to Fe to be 50mA and the evaporation rate to be 1.5 angstrom/second, evaporating to obtain an inactivated layer, and further obtaining a film material.
Example 12
An adsorption layer with the thickness of 50nm and an inactivation layer with the thickness of 100nm are subjected to resistance evaporation on a stainless steel wire net, zeolite with the granularity of 1mm and containing 1wt% of Li is used as a membrane material, mn with the granularity of 3mm and the purity of 99.4% is used as a membrane material for the inactivation layer, and the evaporation process is as follows: placing the stainless steel wire mesh and the film material into an evaporation machine, and vacuumizing a vacuum bin to 4.0 x 10 -3 Pa, introducing 15sccm argon gas to maintain the vacuum degree at 7.0X10 -3 Pa, turning on the ion source, setting the voltage to 200V and the current to 4.0A, ionizing argon to form argon ion, blowing the argon ion to sweep the stainless steel wire mesh for 60s, adjusting the argon gas inlet amount to 9sccm, and introducing 80sccm of oxygen to maintain the vacuum degree to 2.0 x 10 -2 Pa; setting the resistance current corresponding to zeolite as 250mA, evaporating at the evaporation rate of 5.0 angstrom/second to obtain an adsorption layer, and placing zeolite in two evaporation sources with consistent evaporation parameters in the evaporation process to perform double-source co-evaporation; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 6.5A, oxygen and argon are continuously introduced, and the vacuum degree is continuously maintained at 2.0 x 10 -2 Pa; the resistance current corresponding to Mn was set to 4mA and the evaporation rate was set to 0.5 Angstrom/secAnd (3) evaporating to obtain an inactivated layer, further obtaining a film material, wherein Mn is placed in two evaporation sources in the evaporation process, and evaporation parameters are consistent, so that double-source co-evaporation is performed.
Example 13
Evaporating an adsorption layer with the thickness of 60nm and an inactivation layer with the thickness of 120nm on gauze by an electron gun, wherein the adsorption layer uses zeolite with the granularity of 2mm and containing 5wt% of La as a membrane material, the inactivation layer uses Mo with the granularity of 2mm and the purity of 99.6% as a membrane material, and the evaporation process is as follows: placing gauze and membrane material into an evaporator, and vacuumizing a vacuum bin to 5.0 x 10 -3 Pa, introducing 18sccm argon gas to maintain the vacuum degree at 9.0X10 -3 Pa, turning on the ion source, setting the voltage to 200V and the current to 4.5A, ionizing argon to form argon ion to purge gauze for 30s, adjusting the argon inlet amount to 6sccm, and introducing 30sccm of oxygen to maintain the vacuum degree at 2.5×10 -2 Pa; setting the current of an electron gun corresponding to zeolite as 300mA, evaporating at the evaporation rate of 7.0 angstrom/second to obtain an adsorption layer, and placing the zeolite in two evaporation sources with consistent evaporation parameters in the evaporation process to perform double-source co-evaporation; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 6.0A, oxygen and argon are continuously introduced, and the vacuum degree is continuously maintained at 2.5 x 10 -2 Pa; setting the current of an electron gun corresponding to Mo as 300mA and the evaporation rate as 2.0 angstrom/second, evaporating to obtain an inactivated layer, and further obtaining a film material.
Example 14
An adsorption layer with the thickness of 80nm and an inactivation layer with the thickness of 130nm are subjected to resistance evaporation on a nylon net, wherein the adsorption layer uses active carbon with the granularity of 3mm and containing 1wt% of Ce as a film material, the inactivation layer uses Cr with the granularity of 3mm and the purity of 99.0% as a film material, and the evaporation process is as follows: placing nylon net and film material into evaporator, vacuum-pumping vacuum chamber to 6.0 x 10 -3 Pa, introducing 20sccm argon gas to maintain the vacuum degree at 1.0x10 -2 Pa, turning on the ion source, setting the voltage to 200V and the current to 5.0A, ionizing argon to form argon ion to purge nylon net 40s, adjusting the argon inlet amount to 7sccm to maintain the vacuum degree Is maintained at 2.0 x 10 -2 Pa; setting the resistance current corresponding to the active carbon as 350mA, evaporating at the evaporation rate of 9.0 angstrom/second to obtain an adsorption layer, and placing the active carbon in two evaporation sources with consistent evaporation parameters in the evaporation process to perform double-source co-evaporation; then, the ion source is continuously turned on, the voltage is set to be 220V, the current is set to be 5.6 and A, argon is continuously introduced, 40sccm of oxygen is introduced, and the vacuum degree is continuously maintained at 2.0 x 10 -2 Pa; setting the resistance current corresponding to Cr as 200mA and the evaporation rate as 2.5 angstrom/second, evaporating to obtain an inactivated layer, and further obtaining a film material.
Example 15
This example is a modification of example 1, with the following specific differences: zn with granularity of 1mm and purity of 99% and Au with granularity of 1mm and purity of 99% are used as membrane materials for the inactivating layer; setting the current of an electron gun corresponding to Zn to be 10mA, the evaporation rate to be 3.0 angstrom/second, setting the current of the electron gun corresponding to Au to be 150mA, and the evaporation rate to be 0.4 angstrom/second, and performing double-source co-evaporation to obtain an inactivated layer to obtain a film material, wherein the weight ratio of Zn to Au in the film material is 85:10.2.
Example 16
This example is a modification of example 2, with the following specific differences: zn with granularity of 2mm and purity of 99.2% and Pd with granularity of 2mm and purity of 99.2% are used as membrane materials for the inactivating layer; setting the resistance current corresponding to Zn as 10mA, the evaporation rate as 2.5 angstrom/second, setting the resistance current corresponding to Pd as 200mA, the evaporation rate as 0.5 angstrom/second, and performing double-source co-evaporation to obtain an inactivated layer, thereby obtaining a film material, wherein the weight ratio of Zn to Pd in the film material is 85:15.
example 17
This example is a modification of example 3, with the following specific differences: the inactivating layer uses ZnCo alloy with the granularity of 3mm as a membrane material, wherein the weight ratio of the ZnCo alloy to the membrane material is 85:20; setting the current of an electron gun corresponding to the ZnCo alloy to be 20mA and the evaporation rate to be 1.0 angstrom/second, and evaporating to obtain an inactivated layer to obtain a film material.
Example 18
This example is a modification of example 4, with the following specific differences: the inactivating layer uses ZnMn alloy with granularity of 1mm as a membrane material, wherein the weight ratio of the ZnMn alloy to the membrane material is 85:10.2; setting the resistance current corresponding to ZnMn alloy as 10mA and the evaporation rate as 1.5 angstrom/second, evaporating to obtain deactivated layer and further obtaining the film material.
Example 19
This example is a modification of example 5, with the following specific differences: the inactivating layer uses Zn with granularity of 3mm and purity of 99.4 percent and Mo with granularity of 1mm and purity of 99 percent as membrane materials; setting the current of an electron gun corresponding to Zn to be 10mA, the evaporation rate to be 2.0 angstrom/second, setting the current of the electron gun corresponding to Mo to be 300mA, the evaporation rate to be 0.4 angstrom/second, and performing double-source co-evaporation to obtain an inactivated layer to obtain a film material, wherein the weight ratio of Zn to Mo in the film material is 85:15.
example 20
This example is a modification of example 6, with the following specific differences: the inactivating layer uses Cu with granularity of 3mm and purity of 99.4 percent and Zn with granularity of 1mm and purity of 99.0 percent as membrane materials; setting the resistance current corresponding to Cu as 350mA, the evaporation rate as 1.0 angstrom/second, setting the resistance current corresponding to Zn as 10mA, the evaporation rate as 0.2 angstrom/second, and performing double-source co-evaporation to obtain an inactivated layer, thereby obtaining a film material, wherein the weight ratio of Cu to Zn in the film material is 85:20.
example 21
This example is a modification of example 7, with the following specific differences: the inactivating layer uses CuPt alloy with granularity of 1mm as a membrane material, wherein the weight ratio of the CuPt alloy to the membrane material is 85:10.2; setting the current of an electron gun corresponding to the CuPt alloy as 300mA and the evaporation rate as 1.5 angstrom/second, and evaporating to obtain an inactivated layer, thereby obtaining the film material.
Example 22
This example is a modification of example 8, with the following specific differences: the inactivating layer uses CuRu alloy with granularity of 2mm as a film material, wherein the weight ratio of the CuRu alloy to the film material is 85:15; setting the resistance current corresponding to the CuRu alloy to be 310mA and the evaporation rate to be 2.0 angstrom/second, and evaporating to obtain an inactivated layer to obtain the film material.
Example 23
This example is a modification of example 9, with the following specific differences: cu with granularity of 1mm and purity of 99.0% and Mn with granularity of 2mm and purity of 99.2% are used as membrane materials for the inactivating layer; setting electron gun current corresponding to Cu to be 350mA, setting evaporation rate to be 1.5 angstrom/second, setting electron gun current corresponding to Mn to be 4mA, setting evaporation rate to be 0.4 angstrom/second, and performing double-source co-evaporation to obtain an inactivated layer to obtain a film material, wherein the weight ratio of Cu to Mn in the film material is 85:20.
example 24
This example is a modification of example 10, with the following specific differences: the inactivating layer uses Cu with granularity of 1mm and purity of 99.4 percent and Cr with granularity of 3mm and purity of 99.2 percent as film materials; setting the resistance current corresponding to Cu to be 350mA, the evaporation rate to be 1.0 angstrom/second, setting the resistance current corresponding to Cr to be 200mA, the evaporation rate to be 0.1 angstrom/second, and performing double-source co-evaporation to obtain an inactivated layer to obtain a film material, wherein the weight ratio of Cu to Cr in the film material is 85:10.2.
Example 25
This example is a modification of example 11, with the following specific differences: the inactivating layer uses AgCu alloy with granularity of 2mm as a membrane material, wherein the weight ratio of the AgCu alloy to the membrane material is 85:15; setting the current of an electron gun corresponding to the AgCu alloy to be 200mA and the evaporation rate to be 2.0 angstrom/s, and evaporating to obtain an inactivation layer to obtain a film material.
Example 26
This example is a modification of example 12, with the following specific differences: the inactivating layer uses AgFe alloy with granularity of 3mm as a membrane material, wherein the weight ratio of the AgFe alloy to the membrane material is 85:20; setting the resistance current corresponding to the AgFe alloy to be 90mA and the evaporation rate to be 2.5 angstrom/second, and evaporating to obtain an inactivated layer to obtain the film material.
Example 27
This example is a modification of example 13, with the following specific differences: the inactivating layer uses Ag with granularity of 2mm and purity of 99.2% and Zn with granularity of 3mm and purity of 99.4% as membrane materials; setting the current of an electron gun corresponding to Ag as 100mA, the evaporation rate as 1.5 angstrom/second, setting the current of the electron gun corresponding to Zn as 10mA, the evaporation rate as 0.2 angstrom/second, and performing double-source co-evaporation to obtain an inactivated layer to obtain a film material, wherein the weight ratio of Ag to Zn in the film material is 85:10.2.
Example 28
This example is a modification of example 14, with the following specific differences: the inactivating layer uses Ag with granularity of 2mm and purity of 99.0% and Ni with granularity of 1mm and purity of 99.4% as membrane materials; setting the resistance current corresponding to Ag as 100mA, the evaporation rate as 1.0 angstrom/second, setting the resistance current corresponding to Ni as 100mA, the evaporation rate as 0.2 angstrom/second, and performing double-source co-evaporation to obtain an inactivated layer to obtain a film material, wherein the weight ratio of Cu to Cr in the film material is 85:15.
example 29
This example is a modification of example 1, with the following specific differences: the inactivation layer uses AuAg alloy with granularity of 3mm as a membrane material, wherein the weight ratio of the AuAg alloy to the membrane material is 85:20; setting the current of an electron gun corresponding to the AuAg alloy as 130mA and the evaporation rate as 2.5 angstrom/second, and evaporating to obtain an inactivated layer to obtain the film material.
Example 30
This example is a modification of example 2, with the following specific differences: the inactivating layer uses PtPd alloy with granularity of 1mm as a membrane material, wherein the weight ratio of the PtPd alloy to the membrane material is 85:10.2; setting the resistance current corresponding to PtPd alloy as 200mA and the evaporation rate as 3.0 angstrom/second, evaporating to obtain an inactivating layer, and further obtaining the film material.
Example 31
This example is a modification of example 3, with the following specific differences: the inactivating layer uses Au with granularity of 3mm and purity of 99.4 percent and Zn with granularity of 1mm and purity of 99.0 percent as membrane materials; setting the current of an electron gun corresponding to Au to be 150mA, the evaporation rate to be 1.0 angstrom/second, setting the current of the electron gun corresponding to Zn to be 10mA, and the evaporation rate to be 0.2 angstrom/second, and performing double-source co-evaporation to obtain an inactivated layer to obtain a film material, wherein the weight ratio of Au to Zn in the film material is 85:15.
example 32
This example is a modification of example 4, with the following specific differences: pd with the granularity of 3mm and the purity of 99.2 percent and Cu with the granularity of 2mm and the purity of 99.0 percent are used as membrane materials for the inactivating layer; setting the resistance current corresponding to Pd as 200mA, the evaporation rate as 0.5 angstrom/second, setting the resistance current corresponding to Cu as 350mA, the evaporation rate as 0.1 angstrom/second, and performing double-source co-evaporation to obtain an inactivated layer, thereby obtaining a film material, wherein the weight ratio of Pd to Cu in the film material is 85:15.
example 33
This example is a modification of example 5, with the following specific differences: the adsorption layer uses gamma-type aluminum oxide with the granularity of 2mm and containing 1wt% of Na as a membrane material, and the inactivation layer uses PdAU alloy with the granularity of 3mm as a membrane material, wherein the weight ratio of the two is 85:10.2; setting the current of an electron gun corresponding to the PdAU alloy to be 180mA and the evaporation rate to be 3.0 angstrom/second, and evaporating to obtain an inactivated layer to obtain a film material.
Example 34
This example is a modification of example 6, with the following specific differences: the adsorption layer uses active carbon with the granularity of 3mm and containing 5wt% of Ca as a membrane material, and the inactivation layer uses RuMo alloy with the granularity of 1mm as a membrane material, wherein the weight ratio of the two is 85:15; setting the resistance current corresponding to RuMo alloy as 280mA and the evaporation rate as 2.5 angstrom/sec, evaporating to obtain deactivated layer and further obtaining the film material.
Example 35
This example is a modification of example 7, with the following specific differences: the inactivating layer uses Rh with granularity of 1mm and purity of 99.0% and Mn with granularity of 2mm and purity of 99.2% as membrane materials; setting the current of an electron gun corresponding to Rh as 240mA, the evaporation rate as 2.0 angstrom/second, setting the current of the electron gun corresponding to Mh as 240mA, the evaporation rate as 0.4 angstrom/second, and performing double-source co-evaporation to obtain an inactivated layer to obtain a film material, wherein the weight ratio of v to Mh in the film material is 85:20.
example 36
This example is a modification of example 8, with the following specific differences: the inactivating layer uses Mn with granularity of 1mm and purity of 99.4 percent and Cr with granularity of 3mm and purity of 99.2 percent as membrane materials; setting the resistance current corresponding to Mn as 4mA, the evaporation rate as 2.0 angstrom/s, setting the resistance current corresponding to Cr as 200mA, the evaporation rate as 0.5 angstrom/s, and performing double-source co-evaporation to obtain an inactivated layer, thereby obtaining a film material, wherein the weight ratio of Mn to Cr in the film material is 85:20.
Example 37
This example is a modification of example 1, with the following specific differences: the inactivating layer uses Cu with granularity of 1mm and purity of 99.4 percent and Ag with granularity of 3mm and purity of 99.2 percent and Zn with granularity of 1mm and purity of 99.4 percent as membrane materials; setting electron gun current corresponding to Cu as 350mA, evaporation rate as 3.0 angstrom/s, setting electron gun current corresponding to Ag as 100mA, evaporation rate as 0.4 angstrom/s, setting electron gun current corresponding to Zn as 10mA, evaporation rate as 0.3 angstrom/s, and performing three-source co-evaporation to obtain an inactivated layer, thereby obtaining a film material, wherein the weight ratio of Cu, ag and Zn in the film material is 85:10.2:6.8.
example 38
This example is a modification of example 2, with the following specific differences: the inactivating layer uses Ag with granularity of 2mm and purity of 99.0% and Cu with granularity of 1mm and purity of 99.4% and Zn with granularity of 2mm and purity of 99.2% as membrane materials; setting the resistance current corresponding to Ag as 100mA, the evaporation rate as 2.5 angstrom/s, setting the resistance current corresponding to Cu as 350mA, the evaporation rate as 0.5 angstrom/s, setting the resistance current corresponding to Zn as 10mA, the evaporation rate as 0.2 angstrom/s, and performing three-source co-evaporation to obtain an inactivated layer, thereby obtaining a film material, wherein the weight ratio of Cu, ag and Zn in the film material is 85:15:6.8.
Example 39
This example is a modification of example 3, with the following specific differences: the inactivating layer uses CuFeNi alloy with granularity of 1mm as a membrane material, wherein the weight ratio of the CuFeNi alloy to the membrane material is 85:10.2:6.8; setting the current of an electron gun corresponding to the CuFeNi alloy to 320mA and the evaporation rate to 0.1 angstrom/second, and evaporating to obtain an inactivated layer to obtain the film material.
Example 40
This example is a modification of example 4, with the following specific differences: the inactivating layer uses CuCoMn alloy with granularity of 1mm as a membrane material, wherein the weight ratio of the CuCoMn alloy to the membrane material is 85:15:6.8; setting the resistance current corresponding to the CuCoMn alloy to be 320mA and the evaporation rate to be 0.5 angstrom/second, and evaporating to obtain an inactivated layer, thereby obtaining the film material.
Example 41
This example is a modification of example 5, with the following specific differences: the inactivating layer uses Ag with granularity of 2mm and purity of 99.0 percent and Cu with granularity of 1mm and purity of 99.4 percent and Mn with granularity of 2mm and purity of 99.2 percent as membrane materials; setting the current of an electron gun corresponding to Ag as 100mA, the evaporation rate as 2.5 angstrom/second, setting the current of the electron gun corresponding to Cu as 350mA, the evaporation rate as 0.6 angstrom/second, setting the current of the electron gun corresponding to Mn as 4mA, and the evaporation rate as 0.2 angstrom/second, and performing three-source co-evaporation to obtain an inactivated layer, thereby obtaining a film material, wherein the weight ratio of Ag, cu and Mn in the film material is 85:20:6.8.
Example 42
This example is a modification of example 6, with the following specific differences: the inactivating layer uses Zn with granularity of 3mm and purity of 99.2 percent and Fe with granularity of 2mm and purity of 99.0 percent and Ni with granularity of 3mm and purity of 99.4 percent as membrane materials; setting the resistance current corresponding to Zn to be 10mA, the evaporation rate to be 2.0 angstrom/second, setting the resistance current corresponding to Fe to be 50mA, the evaporation rate to be 0.5 angstrom/second, setting the resistance current corresponding to Ni to be 100mA, and the evaporation rate to be 0.2 angstrom/second, and performing three-source co-evaporation to obtain an inactivated layer, thereby obtaining a film material, wherein the weight ratio of Zn, fe and Ni in the film material is 85:20: 8.
Example 43
This embodiment is a modification of the embodiment 7, and is specifically different from the embodiment described below: the inactivating layer uses PtFeNi alloy with granularity of 2mm as a membrane material, wherein the weight ratio of the PtFeNi alloy to the membrane material is 85:20:6.8; setting the current of an electron gun corresponding to PtFeNi alloy to 220mA and the evaporation rate to 0.5 angstrom/second, and evaporating to obtain an inactivated layer to obtain a film material.
Example 44
This example is a modification of example 8, with the following specific differences: the inactivating layer uses CuPtFe alloy with granularity of 2mm as a membrane material, wherein the weight ratio of the CuPtFe alloy to the membrane material is 85:20:8, 8; setting the resistance current corresponding to the CuPtFe alloy to be 340mA and the evaporation rate to be 1.0 angstrom/second, and evaporating to obtain an inactivated layer to obtain the film material.
Example 45
This example is a modification of example 9, with the following specific differences: the inactivating layer uses Cu with granularity of 3mm and purity of 99.2 percent and Ru with granularity of 2mm and purity of 99.0 percent and Mn with granularity of 3mm and purity of 99.4 percent as membrane materials; setting electron gun current corresponding to Cu to be 350mA, evaporation rate to be 2.0 angstrom/second, setting electron gun current corresponding to Ru to be 260mA, evaporation rate to be 0.4 angstrom/second, setting electron gun current corresponding to Mn to be 4mA, and evaporation rate to be 0.2 angstrom/second, and performing three-source co-evaporation to obtain an inactivated layer to obtain a film material, wherein the weight ratio of Cu, ru and Mn in the film material is 85:15: 8.
Example 46
This example is a modification of example 10, with the following specific differences: the inactivating layer uses Zn with granularity of 1mm and purity of 99.4 percent and Au with granularity of 3mm and purity of 99.2 percent and Ni with granularity of 1mm and purity of 99.0 percent as membrane materials; setting the resistance current corresponding to Zn to be 10mA, the evaporation rate to be 1.5 angstrom/second, setting the resistance current corresponding to Au to be 150mA, the evaporation rate to be 0.2 angstrom/second, setting the resistance current corresponding to Ni to be 100mA, and the evaporation rate to be 0.1 angstrom/second, and performing three-source co-evaporation to obtain an inactivated layer, thereby obtaining a film material, wherein the weight ratio of Zn, au and Ni in the film material is 85:10.2: 8.
Example 47
This embodiment is a modification of embodiment 11, and is specifically different from the following one: the inactivation layer uses AuPtMo alloy with granularity of 3mm as a membrane material, wherein the weight ratio of the AuPtMo alloy to the membrane material is 85:15: 8, 8; setting the current of an electron gun corresponding to the AuPtMo alloy to be 180mA and the evaporation rate to be 2.0 angstrom/s, and evaporating to obtain an inactivation layer to obtain a film material.
Example 48
This example is a modification of example 12, with the following specific differences: the inactivating layer uses PdPtRu alloy with granularity of 3mm as a membrane material, wherein the weight ratio of the PdPtRu alloy to the membrane material is 85:10.2:8, 8; setting the resistance current corresponding to the PdPtRu alloy to be 220mA, evaporating at the evaporation rate of 3.0 angstrom/s, and evaporating to obtain an inactivated layer, thereby obtaining the film material.
Example 49
This example is a modification of example 13, with the following specific differences: the inactivating layer uses Ni with granularity of 1mm and purity of 99.4 percent and Co with granularity of 3mm and purity of 99.2 percent and Fe with granularity of 1mm and purity of 99.0 percent as membrane materials; setting the current of an electron gun corresponding to Ni as 100mA, the evaporation rate as 1.5 angstrom/second, setting the current of the electron gun corresponding to Co as 180mA, the evaporation rate as 0.3 angstrom/second, setting the current of the electron gun corresponding to Fe as 50mA, and the evaporation rate as 0.1 angstrom/second, and performing three-source Co-evaporation to obtain an inactivated layer, thereby obtaining a film material, wherein the weight ratio of Ni, co and Fe in the film material is 85:15: 7.5.
Example 50
This example is a modification of example 14, with the following specific differences: the inactivating layer uses Co with granularity of 2mm and purity of 99.0 percent and Mn with granularity of 1mm and purity of 99.4 percent and Mo with granularity of 2mm and purity of 99.2 percent as membrane materials; setting the resistance current corresponding to Co as 180mA, the evaporation rate as 1.0 angstrom/second, setting the resistance current corresponding to Mn as 4mA, the evaporation rate as 0.2 angstrom/second, setting the resistance current corresponding to Mo as 300mA, and the evaporation rate as 0.1 angstrom/second, and performing three-source Co-evaporation to obtain an inactivated layer, thereby obtaining a film material, wherein the weight ratio of Co, mn and Mo in the film material is 85:15:7.5.
example 51
This example is a modification of example 1, with the following specific differences: the inactivating layer uses Zn with granularity of 1mm and 1wt% La as a film material to prepare the film material.
Example 52
This example is a modification of example 2, with the following specific differences: the inactivating layer uses Ag with granularity of 2mm and 6wt% of C as a membrane material to prepare the membrane material.
Example 53
This example is a modification of example 3, with the following specific differences: the inactivating layer uses Au with the granularity of 3mm and 3wt% of K as a film material, and the film material is prepared.
Example 54
This example is a modification of example 4, with the following specific differences: the inactivating layer uses Mo with granularity of 1mm and containing 4wt% of Na as a membrane material, and the membrane material is prepared.
Example 55
This example is a modification of example 5, with the following specific differences: the inactivating layer uses Pd with granularity of 2mm and 5wt% Ca as a membrane material to prepare the membrane material.
Example 56
This example is a modification of example 6, with the following specific differences: the inactivating layer uses Pt with granularity of 3mm and 6wt% of Ba as a membrane material to prepare the membrane material.
Example 57
This example is a modification of example 8, with the following specific differences: the inactivating layer uses Rh with granularity of 1mm and 7wt% Si as a membrane material to prepare the membrane material.
Example 58
This example is a modification of example 12, with the following specific differences: the inactivating layer uses Mn with granularity of 2mm and containing 1wt% of Li as a membrane material to prepare the membrane material.
Example 59
This example is a modification of example 13, with the following specific differences: the inactivating layer uses Cu with granularity of 3mm and 2wt% of C as a film material to prepare the film material.
Example 60
This example is a modification of example 17, with the following specific differences: the inactivating layer uses ZnCo alloy with the granularity of 3mm and 3wt% of B as a film material, wherein the weight ratio of Zn to Co is 85:20; setting the current of an electron gun corresponding to the ZnCo alloy to be 20mA and the evaporation rate to be 1.0 angstrom/second, and evaporating to obtain an inactivated layer to obtain a film material.
Example 61
This example is a modification of example 18, with the following specific differences: the inactivating layer uses ZnMn alloy with granularity of 1mm and 4wt% La as a film material, wherein the weight ratio of Zn to Mn is 85:10.2; setting the resistance current corresponding to ZnMn alloy as 10mA and the evaporation rate as 1.5 angstrom/second, evaporating to obtain deactivated layer and further obtaining the film material.
Example 62
This example is a modification of example 21, with the following specific differences: the inactivating layer uses CuPt alloy with granularity of 1mm and 5wt% Ce as a film material, wherein the weight ratio of Cu to Pt is 85:10.2; setting the current of an electron gun corresponding to the CuPt alloy as 300mA and the evaporation rate as 1.5 angstrom/second, and evaporating to obtain an inactivated layer, thereby obtaining the film material.
Example 63
This example is a modification of example 22, with the following specific differences: the inactivating layer uses a CuRu alloy with the granularity of 2mm and containing 6wt% of K as a film material, wherein the weight ratio of Cu to Ru is 85:15; setting the resistance current corresponding to the CuRu alloy to be 310mA and the evaporation rate to be 2.0 angstrom/second, and evaporating to obtain an inactivated layer to obtain the film material.
Example 64
This example is a modification of example 25, with the following specific differences: the inactivating layer uses AgCu alloy with granularity of 2mm and 7wt% of C as a film material, wherein the weight ratio of Ag to Cu is 85:15; setting the current of an electron gun corresponding to the AgCu alloy to be 200mA and the evaporation rate to be 2.0 angstrom/s, and evaporating to obtain an inactivation layer to obtain a film material.
Example 65
This example is a modification of example 26, with the following specific differences: the inactivating layer uses AgFe alloy with granularity of 3mm and containing 1wt% Ca as a membrane material, wherein the weight ratio of Ag to Fe is 85:20; setting the resistance current corresponding to the AgFe alloy to be 90mA and the evaporation rate to be 2.5 angstrom/second, and evaporating to obtain an inactivated layer to obtain the film material.
Example 66
This example is a modification of example 29, with the following specific differences: the inactivating layer uses AuAg alloy with granularity of 3mm and containing 2wt% of Li as a film material, wherein the weight ratio of Au to Ag is 85:20; setting the current of an electron gun corresponding to the AuAg alloy as 130mA and the evaporation rate as 2.5 angstrom/second, and evaporating to obtain an inactivated layer to obtain the film material.
Example 67
This example is a modification of example 30, with the following specific differences: the inactivating layer uses PtPd alloy with granularity of 1mm and 3wt% of Ba as a membrane material, wherein the weight ratio of Pt to Pd is 85:10.2; setting the resistance current corresponding to PtPd alloy as 200mA and the evaporation rate as 3.0 angstrom/second, evaporating to obtain an inactivating layer, and further obtaining the film material.
Example 68
This example is a modification of example 33, with the following specific differences: the inactivating layer uses a PdAU alloy with the granularity of 3mm and containing 4wt% of Si as a membrane material, wherein the weight ratio of Pd to Au is 85:10.2; setting the current of an electron gun corresponding to the PdAU alloy to be 180mA and the evaporation rate to be 3.0 angstrom/second, and evaporating to obtain an inactivated layer to obtain a film material.
Example 69
This example is a modification of example 34, with the following specific differences: the inactivating layer uses RuMo alloy with granularity of 1mm and 5wt% of C as a membrane material, wherein the weight ratio of Ru to Mo is 85:15; setting the resistance current corresponding to RuMo alloy as 280mA and the evaporation rate as 2.5 angstrom/sec, evaporating to obtain deactivated layer and further obtaining the film material.
Example 70
This example is a modification of example 37, with the following specific differences: the inactivating layer used a CuAgZn alloy with a particle size of 1mm and containing 1wt% c as a film stock, wherein the weight ratio of Cu to Ag to Zn was 85:10.2:6.8; setting the current of an electron gun corresponding to the CuAgZn alloy to 320mA and the evaporation rate to 0.1 angstrom/second, and evaporating to obtain an inactivated layer, thereby obtaining the film material.
Example 71
This example is a modification of example 38, with the following specific differences: the inactivating layer used a CuAgZn alloy with a particle size of 2mm and containing 2wt% ba as the film stock, wherein the weight ratio of Cu to Ag to Zn was 85:15:6.8; setting the current of an electron gun corresponding to the CuAgZn alloy to 320mA and the evaporation rate to 0.5 angstrom/second, and evaporating to obtain an inactivated layer, thereby obtaining the film material.
Example 72
This example is a modification of example 39, with the following specific differences: the inactivating layer used a CuFeNi alloy with a particle size of 1mm and containing 3wt% si as a film stock, wherein the weight ratio of Cu to Fe to Ni was 85:10.2:6.8; setting the current of an electron gun corresponding to the CuFeNi alloy to 320mA and the evaporation rate to 0.1 angstrom/second, and evaporating to obtain an inactivated layer to obtain the film material.
Example 73
This embodiment is a modification of embodiment 40, with the following specific differences: the inactivating layer used a CuCoMn alloy of particle size 1mm and containing 4wt% c as the film stock, wherein the weight ratio of Cu and Co to Mn was 85:15:6.8; setting the resistance current corresponding to the CuCoMn alloy to be 320mA and the evaporation rate to be 0.5 angstrom/second, and evaporating to obtain an inactivated layer, thereby obtaining the film material.
Example 74
This example is a modification of example 41, with the following specific differences: the inactivating layer used an AgCuMn alloy with a particle size of 2mm and containing 5wt% b as a film stock, wherein the weight ratio of Ag to Cu to Mn was 85:20:6.8; setting the resistance current corresponding to the AgCuMn alloy to be 150mA and the evaporation rate to be 1.0 angstrom/second, and evaporating to obtain an inactivated layer, thereby obtaining the film material.
Example 75
This example is a modification of example 42, with the following specific differences: the inactivating layer used a ZnFeNi alloy having a particle size of 3mm and containing 6wt% la as a film stock, wherein the weight ratio of Zn to Fe to Ni was 85:20:8, 8; setting the resistance current corresponding to the ZnFeNi alloy to be 50mA and the evaporation rate to be 1.5 angstrom/second, and evaporating to obtain an inactivated layer to obtain a film material.
Example 76
This example is a modification of example 43, with the following specific differences: the inactivating layer used PtFeNi alloy with particle size of 2mm and containing 7wt% Ce as film material, wherein the weight ratio of Pt to Fe to Ni is 85:20:6.8; setting the current of an electron gun corresponding to PtFeNi alloy to 220mA and the evaporation rate to 0.5 angstrom/second, and evaporating to obtain an inactivated layer to obtain a film material.
Example 77
This embodiment is a modification of embodiment 44, with the following specific differences: the inactivating layer used a CuPtFe alloy with a particle size of 2mm and containing 1wt% k as the film stock, wherein the weight ratio of Cu to Pt to Fe was 85:20:8, 8; setting the resistance current corresponding to the CuPtFe alloy to be 340mA and the evaporation rate to be 1.0 angstrom/second, and evaporating to obtain an inactivated layer to obtain the film material.
Example 78
This example is a modification of example 45, with the following specific differences: the inactivating layer used a CuRuMn alloy having a particle size of 3mm and containing 2wt% na as a film stock, wherein the weight ratio of Cu and Ru to Mn was 85:15:8, 8; setting the resistance current corresponding to the CuRuMn alloy as 340mA and the evaporation rate as 2.0 angstrom/second, evaporating to obtain an inactivated layer, and further obtaining the film material.
Example 79
This example is a modification of example 46, with the following specific differences: the inactivating layer used a ZnAuNi alloy of particle size 1mm and containing 3wt% ca as the membrane material, wherein the weight ratio of Zn to Au to Ni was 85:10.2:8, 8; setting the resistance current corresponding to the ZnAuNi alloy as 50mA and the evaporation rate as 2.5 angstrom/second, and evaporating to obtain an inactivated layer to obtain the film material.
Example 80
This example is a modification of example 47, with the following specific differences: the inactivating layer used an AuPtMo alloy of particle size 3mm and containing 4wt% li as the membrane material, wherein the weight ratio of Au to Pt to Mo was 85:15: 8, 8; setting the current of an electron gun corresponding to the AuPtMo alloy to be 180mA and the evaporation rate to be 2.0 angstrom/s, and evaporating to obtain an inactivation layer to obtain a film material.
Example 81
This example is a modification of example 48, with the following specific differences: the inactivating layer used as a membrane material a PdPtRu alloy having a particle size of 3mm and containing 5wt% ba, wherein the weight ratio of Pd to Pt to Ru is 85:10.2:8, 8; setting the resistance current corresponding to the PdPtRu alloy to be 220mA, evaporating at the evaporation rate of 3.0 angstrom/s, and evaporating to obtain an inactivated layer, thereby obtaining the film material.
Example 82
This example is a modification of example 49, with the following specific differences: the inactivating layer used a NiCoFe alloy with a particle size of 1mm and containing 6wt% si as a film stock, wherein the weight ratio of Ni and Co to Fe was 85:15:7.5; setting the resistance current corresponding to the NiCoFe alloy to be 120mA and the evaporation rate to be 3.0 angstrom/second, and evaporating to obtain an inactivated layer to obtain the film material.
Example 83
This embodiment is a modification of embodiment 50, with the following specific differences: the inactivating layer used CoMnMo alloy with particle size of 2mm and 7wt% si as film stock, wherein the weight ratio of Co and Mn to Mo was 85:15:7.5; setting the resistance current corresponding to the CoMnMo alloy to be 200mA and the evaporation rate to be 2.5 angstrom/second, and evaporating to obtain an inactivated layer, thereby obtaining the film material.
Example 84
Sputtering a 10nm thick adsorption layer and a 10nm thick inactivation layer on the non-woven fabric by using a magnetron sputtering method, wherein the adsorption layerA gamma-type aluminum oxide planar target was used, wherein 0.5wt% la was contained in gamma-type aluminum oxide; the inactivating layer uses Zn plane target, the sputtering process is as follows: placing the non-woven fabric and the planar target into a coating machine, and vacuumizing a vacuum bin to 3.0 x 10 -3 Pa, introducing 20sccm argon gas to maintain the vacuum degree at 9.0X10 -3 Pa, turning on the ion source, setting the voltage to 200V and the current to 4.5A, ionizing argon to form argon ion to purge non-woven fabrics for 30s, adjusting the argon inlet amount to 6sccm, and introducing 30sccm of oxygen to maintain the vacuum degree at 9.0×10 -3 Pa; setting the magnetron sputtering power corresponding to gamma-type aluminum oxide to be 50W, and sputtering at a sputtering rate of 3.0 angstrom/s to obtain an adsorption layer; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 6.5A, oxygen and argon are continuously introduced, and the vacuum degree is continuously maintained at 9.0 x 10 -3 Pa; setting the magnetron sputtering power corresponding to Zn to be 50W and the sputtering rate to be 0.1 angstrom/second, and sputtering to obtain an inactivated layer to obtain a film material.
Example 85
Sputtering an adsorption layer with the thickness of 20nm and an inactivation layer with the thickness of 40nm on a stainless steel wire net by virtue of magnetron sputtering, wherein the adsorption layer adopts a gamma-type aluminum oxide planar target, and the gamma-type aluminum oxide contains 2wt% of Au; the inactivating layer uses Ag plane target, and the sputtering process is as follows: placing a stainless steel wire mesh and a planar target into a coating machine, and vacuumizing a vacuum bin to 4.0x10 -3 Pa, introducing 18sccm argon gas to maintain the vacuum degree at 7.0X10 -3 Pa, turning on the ion source, setting the voltage to 200V and the current to 4.0A, ionizing argon to form argon ion, blowing the argon ion to clean the stainless steel wire mesh for 40s, adjusting the argon gas inlet amount to 7sccm, and introducing 40sccm of oxygen to maintain the vacuum degree to 1.0 x 10 -2 Pa; setting the magnetron sputtering power corresponding to gamma-type aluminum oxide as 100W, and sputtering at a sputtering rate of 5.0 angstrom/s to obtain an adsorption layer; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 6.0A, oxygen and argon are continuously introduced, and the vacuum degree is continuously maintained to be 1.0 x 10 -2 Pa; setting the magnetron sputtering power corresponding to Ag to be 80W and the sputtering rate to be 0.5 angstrom/second, and sputtering to obtain an inactivated layer to obtain a film material.
Example 86
Sputtering a 40nm thick adsorption layer and a 60nm thick inactivation layer on a metal plate (stainless steel sheet or flake), wherein the adsorption layer uses a gamma-type aluminum oxide planar target, and the gamma-type aluminum oxide contains 5wt% Pd; the inactivating layer uses Au planar target, and the sputtering process is as follows: placing the metal plate and the planar target into a coating machine, and vacuumizing a vacuum chamber to 5.0 x 10 -3 Pa, introducing 15sccm argon gas to maintain the vacuum degree at 9.0X10 -3 Pa, turning on the ion source, setting the voltage to 200V and the current to 5.0A, ionizing argon to form argon ion, purging the metal plate for 50s, adjusting the argon gas inlet amount to 8sccm, and introducing 50sccm of oxygen to maintain the vacuum degree at 2.0×10 -2 Pa; setting the magnetron sputtering power corresponding to gamma-type aluminum oxide to be 150W, and sputtering at the sputtering rate of 7.0 angstrom/s to obtain an adsorption layer; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 5.6A, oxygen and argon are continuously introduced, and the vacuum degree is continuously maintained at 2.0 x 10 -2 Pa; setting the magnetron sputtering power corresponding to Au to be 200W and the sputtering rate to be 1.5 angstrom/second, and sputtering to obtain an inactivated layer to obtain a film material.
Example 87
Sputtering an adsorption layer with the thickness of 50nm and an inactivation layer with the thickness of 80nm on cotton cloth by using a gamma-type aluminum oxide planar target as the adsorption layer, wherein the gamma-type aluminum oxide contains 11wt% of Na; the inactivating layer uses a Cu planar target, and the sputtering process is as follows: putting cotton cloth and a planar target into a coating machine, and vacuumizing a vacuum bin to 6.0 x 10 -3 Pa, introducing 20sccm argon gas to maintain the vacuum degree at 1.0x10 -2 Pa, turning on the ion source, setting the voltage to 200V and the current to 4.0A, ionizing argon to form argon ion to purge cotton cloth for 60s, adjusting the argon inlet amount to 9sccm, and introducing 60sccm of oxygen to maintain the vacuum degree at 2.5×10 -2 Pa; setting the magnetron sputtering power corresponding to gamma-type aluminum oxide to be 150W, and sputtering at the sputtering rate of 9.0 angstrom/s to obtain an adsorption layer; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 5.6A, oxygen and argon are continuously introduced, and the vacuum degree is continuously maintained at 2.5 x 10 -2 Pa; setting corresponding to CuThe magnetron sputtering power of (2) is 400W, the sputtering rate is 3.0 angstrom/second, and the inactivated layer is obtained by sputtering, so that the film layer material is obtained.
Example 88
Sputtering an adsorption layer with the thickness of 70nm and an inactivation layer with the thickness of 100nm on gauze by using a gamma-type aluminum oxide planar target, wherein the gamma-type aluminum oxide contains 18 weight percent of Ca; the inactivating layer uses Pd plane target, and the sputtering process is as follows: placing gauze and a planar target into a coating machine, and vacuumizing a vacuum bin to 7.0 x 10 -3 Pa, introducing 18sccm argon gas to maintain the vacuum degree at 2.0X10 -2 Pa, turning on the ion source, setting the voltage to 200V and the current to 4.5A, ionizing argon to form argon ion sweeping gauze for 50s, adjusting the argon inlet amount to 6sccm, and introducing 70sccm of oxygen to maintain the vacuum degree at 2.5×10 -2 Pa; setting the magnetron sputtering power corresponding to gamma-type aluminum oxide as 100W, sputtering at a sputtering rate of 10.0 angstrom/s, and sputtering to obtain an adsorption layer; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 6.0A, oxygen and argon are continuously introduced, and the vacuum degree is continuously maintained at 2.5 x 10 -2 Pa; setting the magnetron sputtering power corresponding to Pd as 300W and the sputtering rate as 1.0 angstrom/second, and sputtering to obtain an inactivated layer to obtain the film material.
Example 89
Sputtering an adsorption layer with the thickness of 80nm and an inactivation layer with the thickness of 130nm on the preservative film by virtue of magnetron sputtering, wherein the adsorption layer adopts a gamma-type aluminum oxide planar target, and the gamma-type aluminum oxide contains 20wt% of Zn; the inactivating layer uses a Pt plane target, and the sputtering process is as follows: placing the preservative film and the planar target into a film plating machine, and vacuumizing a vacuum bin to 8.0 x 10 -3 Pa, introducing 15sccm argon gas to maintain the vacuum degree at 3.0x10 -2 Pa, turning on the ion source, setting the voltage to 200V and the current to 5.0A, ionizing argon to form argon ion sweeping preservative film 40s, adjusting the argon inlet amount to 7sccm, and introducing 80sccm of oxygen to maintain the vacuum degree to 2.5×10 -2 Pa; setting the magnetron sputtering power corresponding to gamma-type aluminum oxide as 100W, sputtering at a sputtering rate of 10.0 angstrom/s, and sputtering to obtain an adsorption layer; then, the ion source is continuously turned on, and the set voltage is 2 20V, current is 6.5A, continuously introducing oxygen and argon, continuously maintaining vacuum degree at 2.5 x 10 -2 Pa; setting the magnetron sputtering power corresponding to Pt as 250W and the sputtering rate as 2.0 angstrom/second, and sputtering to obtain an inactivated layer to obtain the film material.
Example 90
This embodiment is a modification of embodiment 84, with the following specific differences: the adsorption layer uses a gamma-type aluminum oxide planar target, wherein the gamma-type aluminum oxide contains 1wt% of Ce; the inactivating layer uses a CuFe alloy planar target, wherein the weight ratio of Cu to Fe is 85:10.2; setting the magnetron sputtering power corresponding to the CuFe alloy to be 50W and the sputtering rate to be 0.1 angstrom/second, and sputtering to obtain an inactivated layer to obtain the film material.
Example 91
This example is a modification of example 85, with the following specific differences: the adsorption layer uses a gamma-type aluminum oxide planar target, wherein the gamma-type aluminum oxide contains 5 weight percent of Li; the inactivating layer uses a CuZn alloy plane target, wherein the weight ratio of Cu to Zn is 85:15; setting the magnetron sputtering power corresponding to the CuZn alloy as 100W and the sputtering rate as 0.5 angstrom/second, and sputtering to obtain an inactivated layer to obtain the film material.
Example 92
This example is a modification of example 86, with the following specific differences: the adsorption layer uses a gamma-type aluminum oxide planar target, wherein the gamma-type aluminum oxide contains 10wt% of Ba; the inactivating layer uses an AgCu alloy plane target, wherein the weight ratio of Ag to Cu is 85:20; setting the magnetron sputtering power corresponding to the AgCu alloy to be 150W and the sputtering rate to be 1.0 angstrom/second, and sputtering to obtain an inactivated layer to obtain a film material.
Example 93
This example is a modification of example 87, with the following specific differences: the adsorption layer uses a gamma-type aluminum oxide planar target, wherein the gamma-type aluminum oxide contains 15wt% of Mg; the inactivating layer uses an AgZn alloy plane target, wherein the weight ratio of Ag to Zu is 85:10.2; setting the magnetron sputtering power corresponding to the AgZn alloy to be 200W and the sputtering rate to be 1.5 angstrom/second, and sputtering to obtain an inactivated layer, thereby obtaining the film material.
Example 94
This embodiment is a modification of embodiment 88, with the following specific differences: the adsorption layer uses a gamma-type aluminum oxide planar target, wherein the gamma-type aluminum oxide contains 18 weight percent of K; the inactivating layer uses an AgFe alloy plane target, wherein the weight ratio of Ag to Fe is 85:15; setting the magnetron sputtering power corresponding to the AgFe alloy to be 250W, and sputtering at the sputtering rate of 2.0 angstrom/s to obtain an inactivated layer by sputtering, thereby obtaining the film material.
Example 95
This example is a modification of example 89, with the following specific differences: the adsorption layer uses a gamma-type aluminum oxide planar target, wherein the gamma-type aluminum oxide contains 20wt% of Ag; the inactivating layer uses a CuNi alloy plane target, wherein the weight ratio of Cu to Ni is 85:20; setting the magnetron sputtering power corresponding to the CuNi alloy to be 300W and the sputtering rate to be 2.5 angstrom/second, and sputtering to obtain an inactivated layer, thereby obtaining the film material.
Example 96
This embodiment is a modification of embodiment 84, with the following specific differences: the adsorption layer uses a gamma-type aluminum oxide planar target, wherein the gamma-type aluminum oxide contains 5 weight percent of Cu; the inactivating layer uses an AgNi alloy plane target, wherein the weight ratio of Ag to Ni is 85:10.2; setting the magnetron sputtering power corresponding to the AgNi alloy to be 350W and the sputtering rate to be 3.0 angstrom/second, and sputtering to obtain an inactivated layer to obtain a film material.
Example 97
This example is a modification of example 85, with the following specific differences: the inactivating layer uses a CuPt alloy plane target, wherein the weight ratio of Cu to Pt is 85:15; setting the magnetron sputtering power corresponding to the CuPt alloy to be 400W and the sputtering rate to be 3.0 angstrom/second, and sputtering to obtain an inactivated layer to obtain the film material.
Example 98
This example is a modification of example 86, with the following specific differences: the inactivating layer uses a CuMn alloy plane target, wherein the weight ratio of Cu to Mn is 85:20; setting the magnetron sputtering power corresponding to the CuMn alloy to be 400W and the sputtering rate to be 2.5 angstrom/second, and sputtering to obtain an inactivated layer to obtain the film material.
Example 99
This example is a modification of example 87, with the following specific differences: the inactivating layer uses a CuMo alloy plane target, wherein the weight ratio of Cu to Mo is 85:15; setting the magnetron sputtering power corresponding to the CuMo alloy to be 300W and the sputtering rate to be 2.0 angstrom/second, and sputtering to obtain an inactivated layer to obtain the film material.
Example 100
This embodiment is a modification of embodiment 84, with the following specific differences: the inactivating layer uses a CuAgZn alloy planar target, wherein the weight ratio of Cu to Ag to Zn is 85:10.2:6.8; setting the magnetron sputtering power corresponding to the CuAgZn alloy to be 300W and the sputtering rate to be 2.0 angstrom/second, and sputtering to obtain an inactivated layer, thereby obtaining the film material.
Example 101
This example is a modification of example 85, with the following specific differences: the inactivating layer uses an AgCuZn alloy planar target, wherein the weight ratio of Ag to Cu to Zn is 85:15:6.8; setting the magnetron sputtering power corresponding to the AgCuZn alloy to be 200W and the sputtering rate to be 2.5 angstrom/second, and sputtering to obtain an inactivated layer, thereby obtaining the film material.
Example 102
This example is a modification of example 86, with the following specific differences: the inactivating layer uses a CuFeNi alloy plane target, wherein the weight ratio of Cu to Fe to Ni is 85:20:6.8; setting the magnetron sputtering power corresponding to the CuFeNi alloy to be 300W and the sputtering rate to be 3.0 angstrom/second, and sputtering to obtain an inactivated layer to obtain a film material.
Example 103
This example is a modification of example 87, with the following specific differences: the inactivating layer uses a CuCoMn alloy plane target, wherein the weight ratio of Cu to Co to Mn is 85:10.2:8, 8; setting the magnetron sputtering power corresponding to the CuCoMn alloy as 100W and the sputtering rate as 1.0 angstrom/second, and sputtering to obtain an inactivated layer to obtain the film material.
Example 104
This embodiment is a modification of embodiment 88, with the following specific differences: the inactivating layer uses an AgCuMn alloy plane target, wherein the weight ratio of Ag to Cu to Mn is 85:15:8, 8; setting the magnetron sputtering power corresponding to the AgCuMn alloy to be 150W and the sputtering rate to be 1.5 angstrom/second, and sputtering to obtain an inactivated layer to obtain a film material.
Example 105
This example is a modification of example 89, with the following specific differences: the inactivating layer uses a ZnFeNi alloy plane target, wherein the weight ratio of Zn to Fe to Ni is 85:20:8, 8; setting the magnetron sputtering power corresponding to the ZnFeNi alloy to be 50W and the sputtering rate to be 0.1 angstrom/second, and sputtering to obtain an inactivated layer to obtain a film material.
Example 106
This embodiment is a modification of embodiment 90, with the following specific differences: the inactivating layer uses PtFeNi alloy plane target, wherein the weight ratio of Pt to Fe to Ni is 85:20:8, 8; setting the magnetron sputtering power corresponding to PtFeNi alloy to be 250W and the sputtering rate to be 2.0 angstrom/second, and sputtering to obtain an inactivated layer to obtain a film material.
Example 107
This embodiment is a modification of embodiment 91, with the following specific differences: the inactivating layer uses a CuPtFe alloy plane target, wherein the weight ratio of Cu to Pt to Fe is 85:20:8, 8; setting the magnetron sputtering power corresponding to the CuPtFe alloy to be 350W and the sputtering rate to be 3.0 angstrom/second, and sputtering to obtain an inactivated layer to obtain a film material.
Example 108
This embodiment is a modification of embodiment 92, with the following specific differences: the inactivating layer uses a CuRuMn alloy plane target, wherein the weight ratio of Cu to Ru to Mn is 85:20:8, 8; setting the magnetron sputtering power corresponding to the CuRuMn alloy to be 200W and the sputtering rate to be 3.0 angstrom/second, and sputtering to obtain an inactivated layer to obtain the film material.
Example 109
This embodiment is a modification of embodiment 100, with the following specific differences: the inactivating layer used a CuAgZn alloy planar target containing 1wt% la, wherein the weight ratio of Cu to Ag to Zn was 85:10.2:6.8; setting the magnetron sputtering power corresponding to the CuAgZn alloy to be 300W and the sputtering rate to be 2.0 angstrom/second, and sputtering to obtain an inactivated layer, thereby obtaining the film material.
Example 110
This embodiment is a modification of embodiment 101, with the following specific differences: the inactivating layer used an AgCuZn alloy planar target containing 2wt% ce, wherein the weight ratio of Ag to Cu to Zn was 85:15:6.8; setting the magnetron sputtering power corresponding to the AgCuZn alloy to be 200W and the sputtering rate to be 2.5 angstrom/second, and sputtering to obtain an inactivated layer, thereby obtaining the film material.
Example 111
This embodiment is a modification of embodiment 102, with the following specific differences: the inactivating layer used a CuFeNi alloy planar target containing 3wt% k, wherein the weight ratio of Cu to Fe to Ni was 85:20:6.8; setting the magnetron sputtering power corresponding to the CuFeNi alloy to be 200W and the sputtering rate to be 3.0 angstrom/second, and sputtering to obtain an inactivated layer to obtain a film material.
Example 112
This example is a modification of example 103, with the following specific differences: the inactivating layer used a CuCoMn alloy planar target containing 4wt% na, wherein the weight ratio of Cu and Co to Mn was 85:10.2:8, 8; setting the magnetron sputtering power corresponding to the CuCoMn alloy as 100W and the sputtering rate as 1.0 angstrom/second, and sputtering to obtain an inactivated layer to obtain the film material.
Example 113
This embodiment is a modification of embodiment 104, with the following specific differences: the inactivating layer used an AgCuMn alloy planar target containing 5wt% ca, wherein the weight ratio of Ag to Cu to Mn was 85:15:8, 8; setting the magnetron sputtering power corresponding to the AgCuMn alloy to be 150W and the sputtering rate to be 1.5 angstrom/second, and sputtering to obtain an inactivated layer to obtain a film material.
Example 114
This example is a modification of example 105, with the following specific differences: the inactivating layer used a ZnFeNi alloy planar target containing 6wt% li, wherein the weight ratio of Zn to Fe to Ni was 85:20:8, 8; setting the magnetron sputtering power corresponding to the ZnFeNi alloy to be 50W and the sputtering rate to be 0.1 angstrom/second, and sputtering to obtain an inactivated layer to obtain a film material.
Example 115
This example is a modification of example 106, with the following specific differences: the inactivating layer used a planar target of PtFeNi alloy containing 7wt% Ba, wherein the weight ratio of Pt to Fe to Ni was 85:20:8, 8; setting the magnetron sputtering power corresponding to PtFeNi alloy to be 250W and the sputtering rate to be 2.0 angstrom/second, and sputtering to obtain an inactivated layer to obtain a film material.
Example 116
This example is a modification of example 107, with the following specific differences: the inactivating layer used a CuPtFe alloy planar target containing 1wt% k, wherein the weight ratio of Cu to Pt to Fe was 85:20:8, 8; setting the magnetron sputtering power corresponding to the CuPtFe alloy to be 350W and the sputtering rate to be 3.0 angstrom/second, and sputtering to obtain an inactivated layer to obtain a film material.
Example 117
This example is a modification of example 108, with the following specific differences: the inactivating layer used a CuRuMn alloy planar target containing 2wt% na, wherein the weight ratio of Cu and Ru to Mn was 85:20:8, 8; setting the magnetron sputtering power corresponding to the CuRuMn alloy to be 350W and the sputtering rate to be 3.0 angstrom/second, and sputtering to obtain an inactivated layer to obtain the film material.
In the above embodiment, the adsorption layer film material or the planar target and the inactivation layer film material or the planar target may be divided into multiple sets or multiple sets, so as to achieve multi-source co-evaporation or multi-target sputtering and achieve the purpose of time reduction. As for parameters of the planar target, it may be different according to different magnetron sputtering machines. Specifically, the planar target used was a round target having a diameter of 200mm and a thickness of 7.5 mm.
Comparative example 1
Evaporating an inactivation layer with the thickness of 30nm on the non-woven fabric by an electron gun, wherein Zn with the granularity of 1mm and the purity of 99% is used as a film material for the inactivation layer, and the evaporation process is as follows: placing the non-woven fabric and the film material into an evaporation machine, and vacuumizing a vacuum bin to 3.0 x 10 -3 Pa, introducing 15sccm argon gas to maintain the vacuum degree at 5.0x10 -3 Pa, turning on the ion source, setting the voltage to 200V and the current to 4.0A, ionizing argon to form argon ion to purge non-woven fabrics for 30s, adjusting the argon inlet amount to 6sccm, and introducing 30sccm of oxygen to maintain the vacuum degree at 9.0×10 -3 Pa; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 5.6A, oxygen and argon are continuously introduced, and the vacuum degree is continuously maintained at 9.0 x 10 -3 Pa; setting the current of an electron gun corresponding to Zn to be 10mA and the evaporation rate to be 3.0 angstrom/second, and evaporating to obtain an inactivated layer so as to obtain the contrast film material.
Comparative example 2
Evaporating an inactivation layer with the thickness of 20nm on a metal plate (such as a stainless steel plate) by an electron gun, wherein the inactivation layer uses ZnCo alloy with the granularity of 3mm as a film material, the weight ratio of the two is 85:20, and the evaporation process is as follows: placing the metal plate and the film material into an evaporation machine, and vacuumizing a vacuum bin to 5.0 x 10 -3 Pa, introducing 20sccm argon gas to maintain the vacuum degree at 9.0X10 -3 Pa, turning on the ion source, setting the voltage to 200V and the current to 4.5A, ionizing argon to form argon ion, purging the metal plate for 50s, adjusting the argon gas inlet amount to 8sccm, and introducing 50sccm of oxygen to maintain the vacuum degree at 2.0×10 -2 Pa; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 6.5A, oxygen and argon are continuously introduced, and the vacuum degree is continuously maintained at 2.0 x 10 - 2 Pa; the electron gun current corresponding to the ZnCo alloy is 120mA, the evaporation rate is 1.0 angstrom/second, and the inactivating layer is obtained by evaporation, so that the contrast film material is obtained.
Comparative example 3
Evaporating an inactivation layer with the thickness of 60nm on a release film by an electron gun, wherein the inactivation layer uses PtFeNi alloy with the granularity of 2mm as a film material, and the weight ratio of the PtFeNi alloy to the release film is 85:20:68, the evaporation process is as follows: placing the release film and the film material into an evaporation machine, and vacuumizing a vacuum bin to 7.0 x 10 -3 Pa, introducing 15sccm argon gas to maintain the vacuum degree at 9.0X10 -3 Pa, turning on the ion source, setting the voltage to 200V and the current to 4.0A, ionizing argon to form argon ion, blowing the release film for 50s, adjusting the argon gas inlet amount to 8sccm, and introducing 30sccm of oxygen to maintain the vacuum degree at 9.0 x 10 -3 Pa; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 6.5A, oxygen and argon are continuously introduced, and the vacuum degree is continuously maintained at 9.0 x 10 -3 Pa; setting the current of an electron gun corresponding to PtFeNi alloy as 220mA and the evaporation rate as 0.5 angstrom/second, and evaporating to obtain an inactivated layer, thereby obtaining the comparative film material.
Comparative example 4
An inactivation layer with the thickness of 80nm is subjected to magnetron sputtering on cotton cloth, wherein the inactivation layer uses a CuAgZn alloy plane target, and the weight ratio of Cu to Ag to Zn is 85:10.2:6.8, the sputtering process is as follows: putting cotton cloth and a planar target into an evaporation machine, and vacuumizing a vacuum bin to 6.0 x 10 -3 Pa, introducing 20sccm argon gas to maintain the vacuum degree at 1.0x10 -2 Pa, turning on the ion source, setting the voltage to 200V and the current to 4.0A, ionizing argon to form argon ion to purge cotton cloth for 60s, adjusting the argon inlet amount to 9sccm, and introducing 60sccm of oxygen to maintain the vacuum degree at 2.5×10 -2 Pa; then, the ion source is continuously started, the voltage is set to be 220V, the current is set to be 5.6A, oxygen and argon are continuously introduced, and the vacuum degree is continuously maintained at 2.5 x 10 -2 Pa; setting the magnetron sputtering power corresponding to the CuAgZn alloy to be 300W and the sputtering rate to be 2.0 angstrom/second, and sputtering to obtain an inactivated layer, thereby obtaining the contrast film material.
Test example 1
The BET specific surface area of the adsorption layer in the film materials of examples 1 to 117 was all greater than or equal to 0.5. 0.5 m by testing using a static adsorber 2 And/g, the adsorption layer in the membrane layer material prepared by the invention is of a micro-nano porous material structure, and has excellent adsorption capacity.
Test example 2
For the film layer materials obtained in examples 1 to 117 and comparative examples 1 to 4, kill rate tests were conducted according to the ISO18184 standard. The test for the film materials of examples 1-117 gave: the killing rate in 1min is 97-98%, the killing rate in 5min reaches 99%, the killing rate in 10min reaches 99%, and the killing rate in 2h reaches 99%; and tests on the film materials obtained in comparative examples 1 to 4 gave: the killing rate in 1min is less than 60%, the maximum killing rate in 60%, the killing rate in 5min reaches 80%, the killing rate in 10min reaches 90%, and the killing rate in 2h reaches 99%. The film material obtained by the invention can reach 99% in short time for bacteria and viruses, and the film material obtained by the prior art and the film material without the adsorption layer can reach 99% in 2 hours, so the film material is far superior to the film material obtained by the prior art and the comparison example of the invention in the time for reaching the killing rate.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (11)
1. A membrane material for rapidly killing coronaviruses and bacteria, which is characterized by comprising a base material; the adsorption layer and the inactivation layer are formed by in-situ growth, and the adsorption layer is zeolite, gamma-type aluminum oxide, active carbon, zeolite containing doped element oxide, gamma-type aluminum oxide containing doped element oxide or active carbon containing doped element oxide; wherein the mass percentage of the doping element is less than or equal to 20wt%; the doping element is a first transition metal or a first alkali metal or a first lanthanide metal or a first alkaline earth metal with d-electron number of 10; wherein the first transition metal with the d-band electron number of 10 is Zn, ag, au, cu or Pd; the first alkali metal is K or Na or Li; the first alkaline earth metal is Ca or Mg or Ba; the first lanthanide metal is La or Ce; the thickness of the adsorption layer is 10-80nm; the base material is non-woven fabric, stainless steel wire mesh, metal plate, cotton cloth, gauze, preservative film, release film, nylon mesh, PLA, PAN or PBS; the inactivating layer is a single metal oxide of the second transition metal or a multi-metal oxide of the second transition metal; the second transition metal is Zn, ag, au, cu, pd, pt, ni, rh, ru, co, fe, mn, mo, cr.
2. The membrane layer material of claim 1, wherein the inactivating layer has a d-charge number of 10 for at least one second transition metal, and the second transition metal having a d-charge number of 10 is Zn, ag, au, cu or Pd.
3. The film material of claim 2, wherein when the inactivating layer is a multimetal oxide of a second transition metal, the weight ratio of one second transition metal having a d-electron number of 10 to other second transition metals is 15:1.8-85:20 or 15:1.8:1.2-85:20:8; wherein the above proportions correspond to 2-3 kinds of second transition metals, respectively.
4. The film material according to claim 1, wherein the inactivating layer further comprises a second lanthanide metal oxide or a second alkali metal oxide or a second alkaline earth metal oxide or a non-metal oxide or a carbide of the second transition metal; the second lanthanide metal is La or Ce, the second alkali metal is K or Na or Li, the second alkaline earth metal is Ca or Ba, and the nonmetal is Si or B.
5. The membrane layer material of claim 4, wherein the inactivating layer has a d-charge number of 10 for at least one second transition metal, and the second transition metal having a d-charge number of 10 is Zn, ag, au, cu or Pd.
6. The film material of claim 5, wherein when the inactivating layer is a multimetal oxide of a second transition metal, the weight ratio of one second transition metal having a d-electron number of 10 to other second transition metals is 15:1.8-85:20 or 15:1.8:1.2-85:20:8; wherein the above proportions correspond to 2-3 kinds of second transition metals, respectively.
7. The membrane layer material of any one of claims 1-6, wherein the inactivating layer has a thickness in the range of 10-130nm.
8. The preparation method of the film material for rapidly killing coronaviruses and bacteria is characterized in that the film material is formed by an electron gun or a resistance evaporation method, and specifically comprises the following steps: vacuum is pumped to 3.0-8.0 x 10 -3 Pa, introducing argon gas of 15-20sccm to maintain the vacuum degree at 5.0 x 10 -3 -3.0*10 -2 Pa, turning on the ion source, setting ion source parameter at 200V, current at 4.0-5.0A, argon ion ionization blowing substrate for 30-60s, reducing argon ventilation, and introducing 0-80sccm oxygen to maintain vacuum degree at 9.0×10 -3 -2.5*10 -2 Pa; setting the current of an electron gun or the resistance current at 50-350mA, keeping the evaporation rate at 3.0-10.0 Angstrom/second, and evaporating to obtain an adsorption layer; after the adsorption layer is evaporated, the ion source is continuously started, argon and oxygen are continuously introduced, and the vacuum degree is continuously maintained at 9.0-10 -3 -2.5*10 -2 Pa; the ion source parameter is set at 220V, and the current is 5.6-6.5A; setting the current of an electron gun or the resistance current at 4-350mA, keeping the evaporation rate at 0.1-3.0 angstrom/s, evaporating to obtain an inactivated layer, and further obtaining a film material; wherein the adsorption layer is zeolite, gamma-type aluminum oxide, zeolite containing doped element oxide or gamma-type aluminum oxide containing doped element oxide; wherein the mass percentage of the doping element is less than or equal to 20wt%; the doping element is a first transition metal or a first alkali metal or a first lanthanide metal or a first alkaline earth metal with d-electron number of 10; wherein the first transition metal with the d-band electron number of 10 is Zn, ag, au, cu or Pd; the first alkali metal is K or Na or Li; said firstAn alkaline earth metal is Ca or Mg or Ba; the first lanthanide metal is La or Ce; the thickness of the adsorption layer is 10-80nm.
9. The method of claim 8, wherein the substrate is cleaned, dried and pretreated before being placed in a vacuum evaporator.
10. A method for preparing a film material for rapidly killing coronaviruses and bacteria according to any one of claims 1 to 7, which is characterized in that the film material is formed by a magnetron sputtering method, and specifically comprises the following steps: vacuum is pumped to 3.0-8.0 x 10 -3 Pa, introducing argon gas of 15-20sccm to maintain the vacuum degree at 5.0 x 10 -3 -3.0*10 -2 Pa, turning on the ion source, setting ion source parameter at 200V, current at 4.0-5.0A, argon ion ionization blowing substrate for 30-60s, reducing argon ventilation, and introducing 0-80sccm oxygen to maintain vacuum degree at 9.0×10 -3 -2.5*10 -2 Pa; controlling the magnetron sputtering power to be 50-400W, keeping the sputtering rate to be 3.0-10.0 angstrom/s, and sputtering to obtain an adsorption layer; after sputtering to form an adsorption layer, continuously starting an ion source, continuously introducing argon and oxygen, and continuously maintaining the vacuum degree at 9.0 x 10 -3 -2.5*10 -2 Pa; the ion source parameter is set at 220V, and the current is 5.6-6.5A; controlling the magnetron sputtering power to be 50-400W, keeping the sputtering rate to be 0.1-3.0 angstrom/s, and sputtering to obtain an inactivated layer, thereby obtaining the film material.
11. The method of claim 10, wherein the substrate is cleaned and dried and pretreated before being placed in a sputter coater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110777026.7A CN113529024B (en) | 2021-07-09 | 2021-07-09 | Membrane material for rapidly killing coronaviruses and bacteria and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110777026.7A CN113529024B (en) | 2021-07-09 | 2021-07-09 | Membrane material for rapidly killing coronaviruses and bacteria and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113529024A CN113529024A (en) | 2021-10-22 |
| CN113529024B true CN113529024B (en) | 2023-11-21 |
Family
ID=78127209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110777026.7A Active CN113529024B (en) | 2021-07-09 | 2021-07-09 | Membrane material for rapidly killing coronaviruses and bacteria and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113529024B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114479623B (en) * | 2022-01-26 | 2022-09-27 | 苏州鼎奕通材料科技有限公司 | Coating material capable of resisting escherichia coli and staphylococcus aureus and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1552205A (en) * | 2003-05-30 | 2004-12-08 | 中国科学院大连化学物理研究所 | Nanometer catalyst with adsorbing and virus killing activity |
| CN1995442A (en) * | 2006-02-28 | 2007-07-11 | 姜培齐 | Method for producing surface antibiotic product using physical gas phase deposition technology |
| WO2008012136A1 (en) * | 2006-07-24 | 2008-01-31 | Robert Bosch Gmbh | Filter for removing particles from a gas stream and process for producing it |
| CN101167451A (en) * | 2007-09-17 | 2008-04-30 | 苏州科技学院 | Zeolite base composite antibiotic material and its preparation method |
| CN102145260A (en) * | 2011-01-18 | 2011-08-10 | 厦门建霖工业有限公司 | Copper zinc silver alloy metal nano-filtration membrane and preparation method thereof |
| CN107635591A (en) * | 2015-05-05 | 2018-01-26 | 3M创新有限公司 | Antimicrobial articles and its application method |
| CN108430524A (en) * | 2015-11-13 | 2018-08-21 | 3M创新有限公司 | Antimicrobial articles and its application method |
| CN110238387A (en) * | 2019-06-25 | 2019-09-17 | 纳狮新材料(浙江)有限公司 | Functional composite particles and preparation method thereof |
-
2021
- 2021-07-09 CN CN202110777026.7A patent/CN113529024B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1552205A (en) * | 2003-05-30 | 2004-12-08 | 中国科学院大连化学物理研究所 | Nanometer catalyst with adsorbing and virus killing activity |
| CN1995442A (en) * | 2006-02-28 | 2007-07-11 | 姜培齐 | Method for producing surface antibiotic product using physical gas phase deposition technology |
| WO2008012136A1 (en) * | 2006-07-24 | 2008-01-31 | Robert Bosch Gmbh | Filter for removing particles from a gas stream and process for producing it |
| CN101167451A (en) * | 2007-09-17 | 2008-04-30 | 苏州科技学院 | Zeolite base composite antibiotic material and its preparation method |
| CN102145260A (en) * | 2011-01-18 | 2011-08-10 | 厦门建霖工业有限公司 | Copper zinc silver alloy metal nano-filtration membrane and preparation method thereof |
| CN107635591A (en) * | 2015-05-05 | 2018-01-26 | 3M创新有限公司 | Antimicrobial articles and its application method |
| CN108430524A (en) * | 2015-11-13 | 2018-08-21 | 3M创新有限公司 | Antimicrobial articles and its application method |
| CN110238387A (en) * | 2019-06-25 | 2019-09-17 | 纳狮新材料(浙江)有限公司 | Functional composite particles and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 中国硅酸盐学会.《矿物材料学科发展报告 2016-2017》.中国科学技术出版社 ,2018,第134-135页. * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113529024A (en) | 2021-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11896966B2 (en) | Antibacterial material and antibacterial film and antibacterial member using the same | |
| US8070924B2 (en) | Electrode for generation of hydrogen | |
| CN113529024B (en) | Membrane material for rapidly killing coronaviruses and bacteria and preparation method thereof | |
| US20080085326A1 (en) | Antimicrobial material compositions enriched with different active oxygen species | |
| CN110331415A (en) | Three-dimensional bimetal oxide current collector electrode material, preparation method and application thereof | |
| CN114345384B (en) | Membrane material for quickly killing coronavirus and bacteria and preparation method thereof | |
| CN207599885U (en) | A kind of air purifier | |
| CN109110881B (en) | Filtering material for culture system and preparation method and application thereof | |
| CN108690952B (en) | Vacuum plating sterilization film | |
| CN111675417B (en) | Magnetic adsorption assisted photoelectrocatalysis oxidation water treatment system and water treatment method | |
| CN111659466A (en) | Needle-ball-shaped ZIF-67@ CoO @ Co photoelectric catalytic material and preparation method and application thereof | |
| CN114561794B (en) | Nanometer Cu based on formaldehyde removal and antibacterial 2 O-MnO 2 Preparation method of bimetallic oxide | |
| CN114766514B (en) | CuO-ZIF-8 composite nanomaterial sterilized by visible light and preparation method and application thereof | |
| JP3847761B2 (en) | Deodorant fiber sheet | |
| JP2011065822A (en) | Microorganism power generation device and method of manufacturing the same | |
| CN111250130B (en) | Nitride catalyst and method of forming the same | |
| Tan et al. | Preparation and properties of antibacterial TiO2@ C/Ag core–shell composite | |
| CN114074964A (en) | Preparation method and degradation device of carbon aerogel composite coating | |
| CN111729402B (en) | Electroactive air filtering material and preparation method thereof | |
| CN210481095U (en) | Electrochemistry and resin composite sterilization deodorization system | |
| CN116446174A (en) | Antibacterial textile, preparation method and application thereof | |
| CN112536045A (en) | Silver/rhenium disulfide binary composite nano photocatalytic sterilization material and preparation method and application thereof | |
| JP2018123109A (en) | Antibacterial member and production method thereof | |
| JPH1043589A (en) | Catalyst and its production | |
| CN116333332A (en) | Ag-MOF antibacterial material and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |