CN113517358B - Front side slotting method suitable for battery piece electroplating process - Google Patents
Front side slotting method suitable for battery piece electroplating process Download PDFInfo
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- CN113517358B CN113517358B CN202110341379.2A CN202110341379A CN113517358B CN 113517358 B CN113517358 B CN 113517358B CN 202110341379 A CN202110341379 A CN 202110341379A CN 113517358 B CN113517358 B CN 113517358B
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- ink
- silicon wafer
- battery piece
- front side
- grooving
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000009713 electroplating Methods 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 24
- 239000002253 acid Substances 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 239000003513 alkali Substances 0.000 claims abstract description 8
- 238000005406 washing Methods 0.000 claims abstract description 5
- 238000005507 spraying Methods 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 239000000243 solution Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012670 alkaline solution Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses a front surface slotting method suitable for an electroplating battery piece process, which is characterized by comprising the following steps of: s1, coating ink on the surface of a silicon wafer at a position where grooving is not needed; s2, placing the silicon wafer coated with the ink into HF acid solution for grooving; s3, electroplating; and S4, washing off the ink on the surface of the silicon wafer by using NaOH alkali liquor. When the method disclosed by the application is used for slotting, the PN junction is effectively protected, and the overall efficiency of the battery piece is improved.
Description
Technical Field
The invention relates to the technical field of manufacturing of crystalline silicon solar cells, in particular to a front side slotting method suitable for a cell electroplating process.
Background
In the current technical level, the aspect ratio of the thin grid line in the traditional screen printing technology is difficult to be effectively improved, and compared with the technology, the method for preparing the battery front electrode by adopting the seed layer and Light Induced Plating (LIP) has the advantages that: increasing the height-width ratio of the fine grid; the resistivity of the thin grid line is reduced; the width of the fine grid is reduced, and the light receiving area of the battery is increased; the amount of silver paste used for manufacturing the front electrode is reduced, and the purpose of reducing the production cost of the battery is achieved.
At present, the traditional electroplating front surface slotting mode is to directly slot silicon nitride by using an ultraviolet picosecond laser, thereby ensuring that a metal electrode can directly grow on a silicon wafer. But has the following defects: the energy scanned by the laser is uniform, and the surface of the silicon wafer has a pyramid-shaped suede, so that in the grooving process, if the silicon nitride film at the bottom of the pyramid is to be cut off, the suede at the top of the pyramid is inevitably damaged, PN junctions on the silicon wafer are damaged, the voltage loss of the battery piece is caused, and the overall efficiency is influenced.
Disclosure of Invention
The invention mainly provides a front side slotting method suitable for an electroplating battery piece process, which prevents slotting from damaging PN junctions and improves the efficiency of the battery piece.
The technical scheme is as follows:
a front side slotting method suitable for a battery plate electroplating process comprises the following steps:
s1, coating ink on the surface of a silicon wafer at a position where grooving is not needed;
s2, placing the silicon wafer coated with the ink into HF acid solution for grooving;
s3, electroplating;
and S4, washing off the ink on the surface of the silicon wafer by using NaOH alkali liquor.
As a first embodiment, S1 includes the steps of:
S1-A-1, coating ink on the surface of a silicon wafer;
and S1-A-2, using a picosecond laser to print a pattern on the front surface of the cell on the surface of the silicon wafer, and damaging ink on the surface of the silicon wafer.
Preferably, the picosecond laser is an ultraviolet picosecond laser, and the power is 0.5-1W.
As a second embodiment, S1 includes the steps of:
and S1-B, spraying ink, wherein the ink is printed and sprayed according to the area which is not the front side graph of the battery piece.
Preferably, the mass fraction of the HF acid solution is 5-10%.
Preferably, the thickness of the ink is 5-10um.
Preferably, the mass fraction of the NaOH alkaline solution is 1% -3%.
The invention has the advantages of
1. The ink is used as a mask to protect the silicon nitride due to the characteristics of acid resistance and alkali resistance.
2. By using the selective corrosiveness of HF, only the silicon nitride at the groove can be washed away, the silicon wafer cannot be corroded, and the PN junction is protected.
The PN junction is effectively protected, and the overall efficiency of the battery piece is improved.
Drawings
FIG. 1 is a schematic view of ink coating on the surface of a silicon wafer according to a first embodiment
FIG. 2 is a schematic diagram of the first embodiment of the method for forming the front surface of the cell by using a picosecond laser
Detailed Description
The invention is further illustrated by the following examples, without limiting the scope of the invention:
example 1: a front side slotting method suitable for a battery plate electroplating process comprises the following steps:
s1, coating ink on the surface of a silicon wafer at a position where grooving is not needed;
in this embodiment:
S1-A-1, with reference to the figure 1, coating ink 1 on the surface of a silicon wafer 3, wherein the ink 1 covers silicon nitride 2 of the silicon wafer 3;
S1-A-2, with reference to fig. 2, using an ultraviolet picosecond laser (with power of 0.5-1W) to print a pattern on the front surface of a cell on the surface of a silicon wafer 3, and damaging ink 1 on the surface of the silicon wafer 3, as can be seen from fig. 2, the power of the ultraviolet picosecond laser is very small, and after the ink 1 is damaged by laser, a groove 4 only can damage a small part of silicon nitride 2, but not a PN junction on the surface of the silicon wafer 3, so that the PN junction can not be damaged;
s2, placing the silicon wafer coated with the ink into HF acid solution for grooving, wherein the ink is acid-resistant and alkali-resistant, the ink can protect the silicon nitride covered by the ink, the silicon nitride uncovered by the ink can be corroded by the HF, the corrosion of the HF has selectivity, the HF only reacts with the silicon nitride and cannot react with the silicon wafer, and the PN junction at the grooving position cannot be damaged by the HF;
s3, electroplating;
and S4, washing the ink on the surface of the silicon wafer by using NaOH alkali liquor, and finishing the manufacturing of the battery piece.
Example 2: a front side slotting method suitable for a battery plate electroplating process comprises the following steps:
s1, coating ink on the surface of a silicon wafer at a position where grooving is not needed; in the embodiment, ink is sprayed, and the ink is printed and sprayed according to the area of the pattern on the front side of the cell;
s2, placing the silicon wafer coated with the ink into HF acid solution for grooving;
s3, electroplating;
and S4, washing off the ink on the surface of the silicon wafer by using NaOH alkali liquor.
The mass fraction of HF acid solution involved in examples 1 and 2 was 5% to 10%, the thickness of the ink was 5 to 10 μm, and the mass fraction of NaOH alkaline solution was 1% to 3%.
The method provided by the application is compared with the method for directly grooving silicon nitride by using the ultraviolet picosecond laser mentioned in the background art as follows:
| efficiency of | Minority carrier lifetime | |
| Example 1 | 22.15％ | 167us |
| Example 2 | 22.05％ | 151us |
| Comparative example | 20％ | 103us |
From the above table, it can be seen that: when the method disclosed by the application is used for slotting, PN junctions are effectively protected, and the overall efficiency of the cell is improved (for example, the efficiency is improved by 2.05%, and the single component can improve the generated energy by about 50W).
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the invention as defined in the appended claims.
Claims (2)
1. A front side slotting method suitable for a battery piece electroplating process is characterized by comprising the following steps:
s1, coating ink on the surface of a silicon wafer at a position where grooving is not needed;
S1-A-1, coating ink on the surface of a silicon wafer;
S1-A-2, using a picosecond laser to print a pattern on the front surface of a battery piece on the surface of a silicon chip, and damaging ink on the surface of the silicon chip; the picosecond laser is an ultraviolet picosecond laser, and the power is 0.5-1W;
s2, placing the silicon wafer coated with the ink into HF acid solution for grooving, wherein the mass fraction of the HF acid solution is 5% -10%, and the thickness of the ink is 5-10um;
s3, electroplating;
s4, washing off ink on the surface of the silicon wafer by using NaOH alkali liquor, wherein the mass fraction of the NaOH alkali liquor is 1% -3%.
2. The method according to claim 1, characterized in that S1 comprises the steps of:
and S1-B, spraying ink, wherein the ink is printed and sprayed according to the area of the pattern on the front side of the cell.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110341379.2A CN113517358B (en) | 2021-03-30 | 2021-03-30 | Front side slotting method suitable for battery piece electroplating process |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110341379.2A CN113517358B (en) | 2021-03-30 | 2021-03-30 | Front side slotting method suitable for battery piece electroplating process |
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| Publication Number | Publication Date |
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| CN113517358A CN113517358A (en) | 2021-10-19 |
| CN113517358B true CN113517358B (en) | 2023-03-31 |
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| CN115505975A (en) * | 2022-10-12 | 2022-12-23 | 环晟光伏(江苏)有限公司 | Electroplating method of silicon solar cell |
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| CN102593243A (en) * | 2007-08-31 | 2012-07-18 | 费罗公司 | Layered contact structure for solar cells |
| JP5693503B2 (en) * | 2012-03-23 | 2015-04-01 | 三菱電機株式会社 | Solar cell and method for manufacturing the same |
| CN104009118B (en) * | 2014-05-22 | 2016-08-17 | 奥特斯维能源（太仓）有限公司 | A kind of preparation method of high-efficiency N-type crystalline silicon grooving and grid burying battery |
| CN109994553A (en) * | 2019-04-30 | 2019-07-09 | 通威太阳能（成都）有限公司 | Three layers of dielectric passivation film PERC solar cell of one kind and manufacture craft |
| CN112531074A (en) * | 2020-11-20 | 2021-03-19 | 浙江爱旭太阳能科技有限公司 | Back passivation solar cell and preparation method thereof |
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