CN113508523A - 开关电路、混频器及电子设备 - Google Patents
开关电路、混频器及电子设备 Download PDFInfo
- Publication number
- CN113508523A CN113508523A CN201980093496.2A CN201980093496A CN113508523A CN 113508523 A CN113508523 A CN 113508523A CN 201980093496 A CN201980093496 A CN 201980093496A CN 113508523 A CN113508523 A CN 113508523A
- Authority
- CN
- China
- Prior art keywords
- lead
- mos tube
- mos
- axis
- symmetry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 7
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 230000003071 parasitic effect Effects 0.000 description 27
- 101150061388 LON1 gene Proteins 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 10
- 238000002955 isolation Methods 0.000 description 7
- 101150004293 lon2 gene Proteins 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 230000002452 interceptive effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1458—Double balanced arrangements, i.e. where both input signals are differential
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1466—Passive mixer arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1491—Arrangements to linearise a transconductance stage of a mixer arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0088—Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
Abstract
本申请实施例公开了一种开关电路、混频器及电子设备,该开关电路包括第一金属氧化物半导体MOS管、第二MOS管、第三MOS管以及第四MOS管,该第一MOS管的栅极和该第四MOS管的栅极均连接第一端口,该第二MOS管的栅极和该第三MOS管的栅极均连接第二端口;该第一MOS管的栅极与该第一端口之间的引线的长度、该第二MOS管的栅极与该第二端口之间的引线的长度、该第三MOS管的栅极与该第二端口之间的引线的长度、该第四MOS管的栅极与该第一端口之间的引线的长度均相等;线性度较高。
Description
PCT国内申请,说明书已公开。
Claims (15)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2019/085335 WO2020220326A1 (zh) | 2019-04-30 | 2019-04-30 | 开关电路、混频器及电子设备 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN113508523A true CN113508523A (zh) | 2021-10-15 |
Family
ID=73029603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201980093496.2A Pending CN113508523A (zh) | 2019-04-30 | 2019-04-30 | 开关电路、混频器及电子设备 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20220052645A1 (zh) |
EP (1) | EP3955457A4 (zh) |
CN (1) | CN113508523A (zh) |
WO (1) | WO2020220326A1 (zh) |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5060298A (en) * | 1988-12-09 | 1991-10-22 | Siemens Aktiengesellschaft | Monolithic double balanced mixer with high third order intercept point employing an active distributed balun |
JP4569022B2 (ja) * | 2001-03-26 | 2010-10-27 | パナソニック株式会社 | 差動増幅装置 |
KR100367136B1 (ko) * | 2001-05-11 | 2003-01-09 | (주)씨앤에스 테크놀로지 | 길버트셀 믹서에서 두 쌍의 차동구조 트랜지스터 레이아웃 |
US6952572B2 (en) * | 2001-06-20 | 2005-10-04 | Freescale Semiconductor, Inc. | Image rejection mixer with switchable high or low side injection |
US7538596B2 (en) * | 2004-05-25 | 2009-05-26 | Silicon Laboratories, Inc. | Low distortion quadrature mixer and method therefor |
JP5559265B2 (ja) * | 2012-07-30 | 2014-07-23 | ファナック株式会社 | スイッチング素子が並列接続されて並列駆動される電力変換装置 |
KR102046138B1 (ko) * | 2013-02-08 | 2019-11-18 | 삼성전자주식회사 | 무선 통신 시스템에서 사용되는 믹서의 iip2 특성 보정 방법과 그 믹서 |
CN104052418A (zh) * | 2013-03-13 | 2014-09-17 | 华为技术有限公司 | 跨导电路和混频器 |
CN203933551U (zh) * | 2014-07-01 | 2014-11-05 | 无锡华润矽科微电子有限公司 | 一种d类功率放大器的输出级电路 |
CN104348419B (zh) * | 2014-11-17 | 2017-07-18 | 中国科学院微电子研究所 | 一种跨导级线性度提高电路及应用其的混频器电路 |
TWI670930B (zh) * | 2018-12-18 | 2019-09-01 | 財團法人工業技術研究院 | 無線接收裝置 |
-
2019
- 2019-04-30 CN CN201980093496.2A patent/CN113508523A/zh active Pending
- 2019-04-30 EP EP19927224.6A patent/EP3955457A4/en active Pending
- 2019-04-30 WO PCT/CN2019/085335 patent/WO2020220326A1/zh unknown
-
2021
- 2021-10-29 US US17/514,564 patent/US20220052645A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20220052645A1 (en) | 2022-02-17 |
EP3955457A4 (en) | 2022-04-20 |
WO2020220326A1 (zh) | 2020-11-05 |
EP3955457A1 (en) | 2022-02-16 |
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