CN113508523A - 开关电路、混频器及电子设备 - Google Patents

开关电路、混频器及电子设备 Download PDF

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Publication number
CN113508523A
CN113508523A CN201980093496.2A CN201980093496A CN113508523A CN 113508523 A CN113508523 A CN 113508523A CN 201980093496 A CN201980093496 A CN 201980093496A CN 113508523 A CN113508523 A CN 113508523A
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CN
China
Prior art keywords
lead
mos tube
mos
axis
symmetry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980093496.2A
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English (en)
Inventor
周永丽
金香菊
赖砚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of CN113508523A publication Critical patent/CN113508523A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1441—Balanced arrangements with transistors using field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1458—Double balanced arrangements, i.e. where both input signals are differential
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1466—Passive mixer arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1425—Balanced arrangements with transistors
    • H03D7/1491—Arrangements to linearise a transconductance stage of a mixer arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
    • H03D2200/0041—Functional aspects of demodulators
    • H03D2200/0088—Reduction of intermodulation, nonlinearities, adjacent channel interference; intercept points of harmonics or intermodulation products

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

本申请实施例公开了一种开关电路、混频器及电子设备，该开关电路包括第一金属氧化物半导体MOS管、第二MOS管、第三MOS管以及第四MOS管，该第一MOS管的栅极和该第四MOS管的栅极均连接第一端口，该第二MOS管的栅极和该第三MOS管的栅极均连接第二端口；该第一MOS管的栅极与该第一端口之间的引线的长度、该第二MOS管的栅极与该第二端口之间的引线的长度、该第三MOS管的栅极与该第二端口之间的引线的长度、该第四MOS管的栅极与该第一端口之间的引线的长度均相等；线性度较高。

Description

PCT国内申请，说明书已公开。

Claims (15)

  1. PCT国内申请，权利要求书已公开。
CN201980093496.2A 2019-04-30 2019-04-30 开关电路、混频器及电子设备 Pending CN113508523A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/085335 WO2020220326A1 (zh) 2019-04-30 2019-04-30 开关电路、混频器及电子设备

Publications (1)

Publication Number Publication Date
CN113508523A true CN113508523A (zh) 2021-10-15

Family

ID=73029603

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980093496.2A Pending CN113508523A (zh) 2019-04-30 2019-04-30 开关电路、混频器及电子设备

Country Status (4)

Country Link
US (1) US20220052645A1 (zh)
EP (1) EP3955457A4 (zh)
CN (1) CN113508523A (zh)
WO (1) WO2020220326A1 (zh)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060298A (en) * 1988-12-09 1991-10-22 Siemens Aktiengesellschaft Monolithic double balanced mixer with high third order intercept point employing an active distributed balun
JP4569022B2 (ja) * 2001-03-26 2010-10-27 パナソニック株式会社 差動増幅装置
KR100367136B1 (ko) * 2001-05-11 2003-01-09 (주)씨앤에스 테크놀로지 길버트셀 믹서에서 두 쌍의 차동구조 트랜지스터 레이아웃
US6952572B2 (en) * 2001-06-20 2005-10-04 Freescale Semiconductor, Inc. Image rejection mixer with switchable high or low side injection
US7538596B2 (en) * 2004-05-25 2009-05-26 Silicon Laboratories, Inc. Low distortion quadrature mixer and method therefor
JP5559265B2 (ja) * 2012-07-30 2014-07-23 ファナック株式会社 スイッチング素子が並列接続されて並列駆動される電力変換装置
KR102046138B1 (ko) * 2013-02-08 2019-11-18 삼성전자주식회사 무선 통신 시스템에서 사용되는 믹서의 iip2 특성 보정 방법과 그 믹서
CN104052418A (zh) * 2013-03-13 2014-09-17 华为技术有限公司 跨导电路和混频器
CN203933551U (zh) * 2014-07-01 2014-11-05 无锡华润矽科微电子有限公司 一种d类功率放大器的输出级电路
CN104348419B (zh) * 2014-11-17 2017-07-18 中国科学院微电子研究所 一种跨导级线性度提高电路及应用其的混频器电路
TWI670930B (zh) * 2018-12-18 2019-09-01 財團法人工業技術研究院 無線接收裝置

Also Published As

Publication number Publication date
US20220052645A1 (en) 2022-02-17
EP3955457A4 (en) 2022-04-20
WO2020220326A1 (zh) 2020-11-05
EP3955457A1 (en) 2022-02-16

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