CN113496881A - 碳化硅基板底部氧化层增厚结构的制作方法 - Google Patents
碳化硅基板底部氧化层增厚结构的制作方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 45
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- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 12
- -1 aluminum ions Chemical class 0.000 claims abstract description 12
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
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- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
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- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 229920002120 photoresistant polymer Polymers 0.000 description 1
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Abstract
本发明提供了一种形成碳化硅基板底部氧化层增厚结构的制作方法,包括:利用形成于碳化硅基板上具有开口的图案化硬式掩膜版,透过上述开口图案化碳化硅基板以形成沟槽结构于碳化硅基板中;利用上述图案化硬式掩膜版作为离子注入掩膜版;注入铝离子至碳化硅基板的沟槽结构,利用上述图案化硬式掩膜版使铝离子注入沟槽结构的底部区域并非晶化底部区域;氧化上述非晶化底部区域以形成底部氧化区域。
Description
技术领域
本发明涉及一种微电子组件及其制作方法,特别是一种碳化硅基板底部氧化层增厚结构的制作方法。
背景技术
对于本领域技术人员来说,单晶碳化硅(SiC)特别适用于半导体器件,例如集成电路半导体器件和功率半导体器件。集成电路半导体器件通常包括许多有源器件,例如单一半导体衬底中的晶体管。功率半导体器件可以是集成电路器件,能承载大电流并支持高电压的半导体器件。
碳化硅与硅是最常用的半导体材料,与硅相比,碳化硅具有宽带隙、高熔点、低介电常数、高击穿场强度、高导热率和高饱和电子漂移速度。这些特性允许碳化硅微电子器件可以在比传统硅基器件更高的温度和更高功率下工作。除了上述优点之外,碳化硅功率器件可以比传统硅功率器件更低的特定导通电阻工作。
用于形成微电子器件的许多制程(processes)需要形成绝缘区域,例如氧化物,其充当器件处理的掩膜版,执行将半导体器件的一个或多个区域彼此电隔离的功能,以及使相邻的半导体器件绝缘的功能。用于在硅半导体衬底上形成绝缘区域的常规技术包括热氧化、低压化学气相沉积(LPCVD)和等离子体辅助沉积(plasma-assisted deposition)。如本领域技术人员所理解的,热氧化可能是用于生长高质量氧化物的最常用技术,例如在硅衬底上制成的氧化物-二氧化硅(SiO2)。
除了在硅上形成氧化物的众多技术之外,于碳化硅进行热氧化亦被广泛地研究。
然而,尽管先前在碳化硅衬底上生长薄栅极氧化层的一些尝试,但是迄今尚未实现在低于1100摄氏度(1373K)的温度下使用生长技术形成大约的厚氧化物层。这种厚氧化物层,例如用于使器件的区域电绝缘所使用的氧化物层,以及使相邻的器件彼此电绝缘所使用氧化物覆盖的沟槽。当这些器件在高电场和高电流下工作时,厚氧化物对于功率器件特别重要,以防止器件区域之间或相邻器件之间的电弧或场氧化物击穿。
现今,功率半导体器件,例如功率金属氧化物场效晶体管(MOSFET)或是绝缘栅双极晶体管(IGBT)被广泛应用于车用电子器件、马达驱动控制等领域,随着半导体装置愈发高密度集成化,前述功率半导体器件亦被要求具有沟槽式结构以提高单位面积器件的密度。
举例而言,为了提高单位面积器件的密度,IGBT朝向沟槽栅极(trench-gated)类型发展,然而,高密度的沟槽MOS结构不仅增大了器件的栅极电容,降低器件的开关速度,而且会增加器件的饱和电流密度,劣化器件的短路安全工作区。由于以碳化硅为基板制作的功率半导体器件已被视为取代现行以硅为基板的下一代功率半导体器件的重要候选产品。因此为了防止器件区域之间或相邻器件之间的电弧或场氧化物击穿,解决方式为在碳化硅沟槽结构底部形成厚氧化层。然而,现存的在碳化硅沟槽结构底部形成厚氧化层的制作技术存在一些问题需要被克服。例如,传统碳化硅基板为Si(0001)/C(0001)晶面,因此热氧化方式生成的底部氧化层其生成速率会比沟槽侧壁慢,无法达到预期效果。
本发明的目的主要提出一种新的碳化硅基板底部氧化层增厚结构的制作方法。
发明内容
本发明提出了一种形成碳化硅基板底部氧化层增厚结构的制作方法,包括:利用一形成于该碳化硅基板上具有开口的图案化硬式掩膜版,透过该开口图案化该碳化硅基板以形成一沟槽结构于该碳化硅基板中;利用该图案化硬式掩膜版作为离子注入掩膜版;导入铝离子至该碳化硅基板的该沟槽结构,利用该图案化硬式掩膜版使该铝离子注入该沟槽结构的底部区域并非晶化该底部区域;及氧化该非晶化底部区域以形成底部氧化区域。
附图说明
本发明的器件,特征和优点可以透过说明书中所概述的较佳实施例的详细描述和附图来理解:
图1为本发明的沟槽结构制作步骤的结构剖面示意图。
图2为本发明的沟槽结构制作步骤的结构剖面示意图。
图3为本发明的沟槽结构制作步骤的结构剖面示意图。
图4为本发明碳化硅基板底部氧化层增厚结构制作步骤的结构剖面示意图。
图5为本发明碳化硅基板底部氧化层增厚结构制作步骤的结构剖面示意图。
图6为本发明碳化硅基板底部氧化层增厚结构剖面示意图。
主要器件符号说明
11a表面 20保护层 30阻挡层
40开口 50沟槽 50a沟槽侧壁
50b沟槽底部 60铝离子进行离子注入 70底部非晶区域
80底部厚氧化层 10碳化硅基板
具体实施方式
现在将更详细地描述本发明的一些较佳实施例。然而,应该认识到,提供本发明的较佳实施例是为了说明而不是限制本发明。另外,除了明确描述的那些实施例之外,本发明还可以在广泛的其他实施例中实施,除非在所附权利要求中指定,否则本发明的范围不受明确限制。
图1-图3描绘本发明沟槽结构制作方法的剖面示意图。以下段落根据本发明较佳实施例所显示的一种沟槽结构制作流程进行说明。如图1所示,提供具有表面11a的单晶碳化硅基板10,其中表面11a为碳化硅基板的晶面,所提供的碳化硅基板10可以为已活化处理的碳化硅基板。接着按照顺序在碳化硅基板10上形成保护层20与阻挡层30。保护层20的材料为石墨(graphite)或氮化铝(AlN),形成保护层20的方法为淀积。阻挡层30的材料为二氧化硅(SiO2)、氮化硅(SiNx)、或金属,形成阻挡层30的方法为淀积。
接着如图2所示,图案化保护层20与阻挡层30,形成开口40。图案化保护层20与阻挡层30的方式例如以光阻为掩膜版,对保护层20与阻挡层30进行刻蚀。
如图3所示,以图案化的阻挡层30为硬式掩膜版,图案化碳化硅基板10以形成沟槽结构50,沟槽结构50包含与碳化硅基板10的表面11a垂直的沟槽侧壁50a,其平行晶面。图案化碳化硅基板10的方法为干法刻蚀,例如以等离子体刻蚀的方式,通入气体包含组合如六氟化硫(SF6)和氧气(O2)、氩气(Ar)、或三氟化碳(NF3)和溴化氢(HBr)和氧气(O2)对碳化硅基板进行刻蚀。
图4-图5描绘本发明碳化硅基板底部氧化层增厚结构制作方法的剖面示意图。如图4所示,以图案化后的保护层20与阻挡层30作为硬式掩膜版(hard mask)保护表面区域11a,对曝露出的沟槽结构底部区域50以铝离子(Al+)进行离子注入60,使得沟槽结构底部区域50的碳化硅非晶化(amorphizing)并形成向下延伸的底部非晶化区域70,以一较佳实施例而言,向下延伸的范围大约为大于0.05μm,其中离子注入60能量范围为大于40_KeV,铝离子(Al+)掺杂剂量大于1x1014cm-2。
参照图5,于碳化硅沟槽结构底部非晶化步骤之后,接着进行热氧化使底部非晶化区域70能够以较高氧化速率形成厚底部氧化层(thick bottom oxide layer)80,热氧化上述底部非晶化碳化硅区域70,以一较佳实施例而言可以于氧气环境下以大于1350K的温度下进行热氧化。
如图6,以图案化后的保护层20与阻挡层30作为硬式掩膜版于上述热氧化步骤后可以被移除,形成如图6的结构以进行后续沟槽式MOSFET或沟槽式IGBT器件制作。
本发明提出碳化硅基板底部氧化层增厚结构与制作方法,其与传统方式相比除了因以铝离子(Al+)进行离子注入形成沟槽底部碳化硅底部区域延伸一定厚度非晶化区域,使得该区域内与其他单晶碳化硅区域相比内悬空键数目增加进而增强化学活性,使得热氧化速率加快;此外又由于部分未氧化的铝离子(Al+)留在上述非晶化区域底部,其可以提供分散电场的作用,使其对抗器件区域之间或相邻器件之间的电弧或场氧化物击穿能力增强,能够更进一步保护沟槽底部。
如本领域技术人员可以理解的,本发明的前述较佳实施例是用以说明本发明而非限制本发明。其中已经结合较佳实施例描述了本发明,将对本领域技术人员提出修改。因此,本发明不限于该实施例所描述的技术内容,而是本发明旨在覆盖包括在所附权利要求的精神和范围内的各种修改和类似布置,其范围应该被赋予最宽的解释,由此涵盖所有这些修改和类似的结构。其上虽然已经说明和描述了本发明的优选实施例,但应该理解,可以在不脱离本发明的精神和范围的情况下做出各种改变。
Claims (6)
1.一种形成碳化硅基板底部氧化层增厚结构的制作方法,其特征在于,其包括:利用一形成于该碳化硅基板上具有开口的图案化硬式掩膜版,透过该开口图案化该碳化硅基板以形成沟槽结构于该碳化硅基板中;利用该图案化硬式掩膜版作为离子注入掩膜版;注入铝离子至该碳化硅基板的该沟槽结构,利用该图案化硬式掩膜版使该铝离子注入该沟槽结构的底部区域并非晶化该底部区域;及氧化该非晶化底部区域以形成底部氧化区域。
2.根据权利要求1所述形成碳化硅基板底部氧化层增厚结构的制作方法,其特征在于,所述形成于该碳化硅基板上具有开口的图案化硬式掩膜版的制作方法包含:形成保护层于该碳化硅基板上;形成阻挡层于该保护层上;及图案化该阻挡层与该保护层,以形成该开口。
3.根据权利要求1所述形成碳化硅基板底部氧化层增厚结构的制作方法,其特征在于,该非晶化底部区域向下延伸范围为大于0.05μm。
4.根据权利要求1所述形成碳化硅基板底部氧化层增厚结构的制作方法,其特征在于,所述氧化该非晶化底部区域的方法,包括于氧气环境下于温度范围大于1350K,氧化该沟槽结构的该非晶化底部区域。
5.根据权利要求1所述形成碳化硅基板底部氧化层增厚结构的制作方法,其特征在于,所述铝离子注入该沟槽结构的底部区域的能量范围为大于40KeV。
6.根据权利要求1所述形成碳化硅基板底部氧化层增厚结构的制作方法,其特征在于,所述铝离子注入该沟槽结构的底部区域的掺杂剂量范围为大于1x1014cm-2。
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