CN113489295B - APD (avalanche photo diode) protection method and circuit - Google Patents
APD (avalanche photo diode) protection method and circuit Download PDFInfo
- Publication number
- CN113489295B CN113489295B CN202110676736.0A CN202110676736A CN113489295B CN 113489295 B CN113489295 B CN 113489295B CN 202110676736 A CN202110676736 A CN 202110676736A CN 113489295 B CN113489295 B CN 113489295B
- Authority
- CN
- China
- Prior art keywords
- apd
- pulse width
- circuit
- signal
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000000630 rising effect Effects 0.000 claims description 13
- 238000010586 diagram Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
- H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Amplifiers (AREA)
- Dc-Dc Converters (AREA)
Abstract
One or more embodiments of the present invention provide an APD protection method and circuit, where the APD protection method is applied to an APD protection circuit, the APD protection circuit includes a booster circuit, a photo avalanche diode APD, a transimpedance amplifier and a variable gain amplifier, an output terminal of the booster circuit is connected to one end of the APD, another terminal of the APD is connected to an input terminal of the transimpedance amplifier, an output terminal of the transimpedance amplifier is connected to an input terminal of the variable gain amplifier, and the method includes: acquiring a signal output by the variable gain amplifier; determining a pulse width of the signal based on the signal; the APD protection method can effectively prevent the over-saturation of the APD by controlling the booster circuit according to the pulse width to adjust the bias voltage of the APD.
Description
Technical Field
The present invention relates to the field of circuit technologies, and in particular, to an APD protection method and circuit.
Background
At present, most of mainstream laser radars use a pulse ranging mode, that is, one or a row of pulse laser is emitted, the pulse laser is collimated by an optical antenna and then irradiates a target, and reflected light is incident into a photoelectric detector through the gain of the optical antenna. APDs are mostly used as the main photodetector because the reflected light energy is weak. However, when a high anti-target appears in the short-distance measuring range of the laser radar or under the condition that the laser radar is subjected to multi-unit correlation, the APD is in a high saturation working state, an avalanche region is easy to exhaust, and the APD is further damaged. Therefore, how to perform oversaturation protection on the APD is an urgent problem to be solved at present.
Disclosure of Invention
In view of the above, one or more embodiments of the present invention provide an APD protection method and circuit, which can perform over-saturation protection on an APD in a circuit with the APD as a main photodetector.
Based on the first aspect of the present invention, there is provided an APD protection method applied to an APD protection circuit, where the APD protection circuit includes a voltage boost circuit, a photo avalanche diode APD, a transimpedance amplifier and a variable gain amplifier, an output terminal of the voltage boost circuit is connected to one end of the APD, another terminal of the APD is connected to an input terminal of the transimpedance amplifier, and an output terminal of the transimpedance amplifier is connected to an input terminal of the variable gain amplifier, the method includes: acquiring a signal output by the variable gain amplifier; determining a pulse width of the signal based on the signal; and controlling the boosting circuit according to the pulse width to adjust the bias voltage of the APD.
Optionally, determining the pulse width of the signal based on the signal includes: measuring the time when a pair of rising edge level signals and falling edge level signals of the signal are generated; and determining the pulse width according to the time.
Optionally, controlling the voltage boost circuit according to the pulse width to adjust the bias voltage adjustment of the APD includes: determining a target duty ratio corresponding to the pulse width according to a corresponding relation between a preset pulse width and the duty ratio of a Pulse Width Modulation (PWM) signal of the booster circuit; controlling the boost circuit to adjust a bias voltage of the APD according to the target duty cycle.
Optionally, the step-up circuit is a step-up chopper circuit, a current mirror device is disposed between the APD and the step-up circuit, and the step-up circuit is controlled to adjust a bias voltage of the APD according to the pulse width, including: and generating a photocurrent through the current mirror device, and controlling a switching device in the boost chopper circuit to be switched on or switched off through the photocurrent so as to adjust the bias voltage of the APD.
Optionally, controlling the voltage boost circuit according to the pulse width to adjust the bias voltage of the APD includes: and when the pulse width is larger than a pulse width threshold value, reducing the duty ratio of the PWM signal of the booster circuit.
According to a second aspect of the present invention, there is provided an APD protection circuit, including: the device comprises a booster circuit, a photoelectric avalanche diode (APD), a transimpedance amplifier, a variable gain amplifier, a pulse width judging unit and a processing unit, wherein the output end of the booster circuit is connected with one end of the APD, the other end of the APD is connected with the input end of the transimpedance amplifier, the output end of the transimpedance amplifier is connected with the input end of the variable gain amplifier, the output end of the variable gain amplifier is connected with the input end of the pulse width judging unit, the output end of the pulse width judging unit is connected with the input end of the processing unit, and the output end of the processing unit is connected with the input end of the booster circuit; the pulse width discrimination unit is used for acquiring a signal output by the variable gain amplifier and determining the pulse width of the signal based on the signal; the processing unit is used for controlling the voltage boosting circuit according to the pulse width so as to adjust the bias voltage of the APD.
Optionally, the pulse width discrimination circuit includes a time-to-digital converter TDC for measuring a time when a pair of rising edge level signals and a falling edge level signal of the signal are generated; and determining the pulse width according to the time.
Optionally, the processing unit is specifically configured to: determining a target duty ratio corresponding to the pulse width according to a preset corresponding relation between the pulse width and the duty ratio of a Pulse Width Modulation (PWM) signal of the booster circuit; controlling the boost circuit to adjust a bias voltage of the APD according to the target duty cycle.
Optionally, the voltage boost circuit is a boost chopper circuit, a current mirror device is disposed between the APD and the voltage boost circuit, the current mirror device is configured to generate a photocurrent, and a switching device in the voltage boost circuit is turned on or off under the action of the photocurrent to adjust a bias voltage of the APD.
Optionally, the processing unit is specifically configured to: and when the pulse width is larger than a pulse width threshold value, reducing the duty ratio of the PWM signal of the booster circuit.
In the APD protection method according to one or more embodiments of the present invention, the pulse width of the signal passing through the APD is measured, and the bias voltage of the APD is adjusted by controlling the voltage boosting circuit of the APD according to the measured pulse width, so that damage to the APD due to oversaturation of the APD can be effectively prevented, and the reliability of the APD is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic diagram illustrating the structure and internal electric field of an APD according to one or more embodiments of the present invention.
FIG. 2 is a schematic diagram illustrating an equivalent circuit model of an APD in accordance with one or more embodiments of the present invention.
Figure 3 is a flow diagram illustrating a method of APD protection in accordance with one or more embodiments of the present invention.
Fig. 4 is a schematic diagram illustrating an APD protection circuit in accordance with one or more embodiments of the present invention.
FIG. 5A is a schematic diagram illustrating a pair of rising edge and falling edge level signals in accordance with one or more embodiments of the invention.
Fig. 5B is a schematic diagram illustrating a pulse width of a signal in accordance with one or more embodiments of the invention.
Figure 6 is a schematic diagram illustrating the relationship between APD junction capacitance and bias voltage in accordance with one or more embodiments of the present invention.
Fig. 7 is a schematic diagram of a BOOST circuit shown in accordance with one or more embodiments of the present invention.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
It should be understood that the described embodiments are only some embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
One or more embodiments of the present invention provide an APD protection method to prevent an APD from being oversaturated in a photodetection circuit having the APD as a main photodetector. The Avalanche Photodiode (APD) is a PN junction structure, a P region and an N region are heavily doped, an intrinsic semiconductor is doped in the middle to form an Avalanche region, and under the condition of high voltage reverse bias, electron holes generated by photoelectric effect accelerate a large electric field passing through the Avalanche region to impact other electron holes to form the Avalanche effect. The structure and internal electric field of an APD are illustrated in fig. 1 as an example.
In analyzing circuit characteristics of APDPreviously, the equivalent circuit of the APD was considered. Under the condition of not focusing on the problem of APD small signal bandwidth, according to a rate equation of carriers, an equivalent circuit model of APD can be derived, as shown in fig. 2, for example, the equivalent circuit model of APD is a three-port model, NP is a virtual end and is used for simulating the input of optical signals, NA and NB are actual electrical ports, NA is a high-voltage port (N region), and NB corresponds to a negative electrode. Wherein, the middle part corresponds to the amplification and flow direction of the carrier along with the photon-generated carrier. I.C. AmpIs avalanche photocurrent, IdIs dark current, InIs shot noise. RjIs an equivalent resistance, equivalent is 1012Ohm, CjIs parasitic capacitance of chip, about 10-14F，RsAnd RpTo package parasitic resistance, about 10 ohms, CpFor packaging parasitic capacitance, about 10-12F。
Fig. 3 is a flow chart illustrating an APD protection method, which can be applied to an APD protection circuit, for example, as shown in fig. 4, according to one or more embodiments of the present invention, and the APD protection circuit includes: a BOOST circuit, an APD (Avalanche photo diode), wherein the APD may be, for example, an APD of silicon substrate or InGaAs material, a TIA (Trans-Impedance Amplifier), a VGA (Variable Gain Amplifier), a Variable Gain Amplifier, a comparator, a TDC (Time to Digital converter), and a processing unit, an output end of the BOOST circuit is connected to one end of the APD, another end of the APD is connected to an input end of the transimpedance Amplifier, an output end of the transimpedance Amplifier is connected to an input end of the Variable Gain Amplifier, an output end of the Variable Gain Amplifier is connected to an input end of the comparator, an output end of the comparator is connected to an input end of the TDC, an output end of the TDC is connected to an input end of the processing unit, and an output end of the processing unit is connected to an input end of the BOOST circuit, based on the APD protection circuit, as shown in fig. 3, the APD protection method includes:
step 301: acquiring a signal output by the variable gain amplifier;
step 302: determining a pulse width of the signal based on the signal;
it has been found that APD is not damaged by intense light incident once, but rather is burned off over a period of time (e.g. one minute) following intense light incidence. Based on the reason, intensity of the photocurrent received by the APD can be monitored, and the photocurrent received by the APD is adjusted according to a monitoring result, so that supersaturation of the APD is prevented. Taking the APD protection circuit shown in fig. 2 as an example, after the APD is over-saturated, signals passing through TIA and VGA will have obvious spreading phenomenon, and the signal will generate a level signal with a wider pulse width after passing through the comparator, so that one or more embodiments of the present invention can obtain the condition of the received APD current by obtaining the signal output by VGA and measuring the pulse width of the signal.
In one or more embodiments of the present invention, and again as illustrated in fig. 4, a comparator may be utilized, for example, the high-speed comparator respectively judges the rising edge and the falling edge of the level signal passing through the VGA, generates two comparison levels, for example, two TTL (Transistor Logic) or CMOS (Complementary Metal-Oxide-semiconductor) level signals are generated, the two level signals are output to the TDC, which determines the pulse width of the signal based on the two level signals, as shown in fig. 5A and 5B, the TDC measures the times of stop1 and stop2, respectively, from the beginning of the timing, the measured stop1 time is the time when a rising edge occurs, the measured stop2 time is the time when a falling edge occurs, and the pulse width of the signal is obtained by subtracting the stop1 time from the stop2 time, thereby completing the measurement of the pulse width of the signal.
Step 303: controlling the boost circuit to adjust a bias voltage of the APD according to the pulse width.
For example, the boosting circuit can be controlled to increase the positive high voltage or the negative high voltage according to the determined pulse width of the signal to ensure that the APD works in an avalanche region, so that the APD is prevented from being oversaturated.
In the APD protection method according to one or more embodiments of the present invention, the pulse width of the signal passing through the APD is measured, and the bias voltage of the APD is adjusted by controlling the voltage boosting circuit of the APD according to the measured pulse width, so that the APD damage caused by the oversaturation of the APD can be effectively prevented, and the reliability of the APD is improved.
In one or more embodiments of the invention, determining the pulse width of the signal based on the signal may include:
and measuring the time when a pair of rising edge level signals and falling edge level signals of the signals are generated, wherein the pair of rising edge level signals and falling edge level signals refers to the generation of one rising edge level signal and one falling edge level signal which are adjacent in time. Taking fig. 5A as an example, the times at which the pair of rising edge level signals and falling edge level signals are obtained through TDC measurement are stop1 and stop2, respectively, and the pulse width is determined according to the times, which may be obtained by subtracting stop1 from stop2 to obtain the difference therebetween, i.e., the pulse width of the signal.
In one or more embodiments of the present invention, controlling the voltage boost circuit to adjust the bias voltage of the APD according to the pulse width may include:
determining a target duty ratio corresponding to the pulse width according to a preset corresponding relation between the pulse width and the duty ratio of the PWM signal of the booster circuit; controlling the boost circuit to adjust a bias voltage of the APD according to the target duty cycle. For example, a table of correspondence between the pulse width of the signal and the duty ratio of the PWM signal of the boost circuit may be pre-established based on the principle that the larger the pulse width is, the smaller the duty ratio of the PWM signal is, where the table includes the duty ratio of each PWM signal corresponding to each pulse width value, and when determining the duty ratio of each PWM signal corresponding to each pulse width value, it is required to ensure that the output of the boost circuit is not less than a preset voltage value, for example, 40V. After the pulse width of the signal is determined, taking the APD protection circuit shown in fig. 4 as an example, the pulse width may be sent to the processing unit, the processing unit may search a duty ratio of a target PWM signal corresponding to the pulse width in the correspondence table, and use the duty ratio of the target PWM signal as a duty ratio of a PWM signal of the BOOST circuit, and the processing unit may send the duty ratio of the PWM signal to the BOOST circuit (which is an example of the BOOST circuit), and use the duty ratio of the PWM signal as an input of the BOOST circuit to control an output voltage of the BOOST circuit, thereby completing bias control of the APD, ensuring that the APD operates in a linear avalanche region, and ensuring that the laser radar operates normally and stably. The APD junction capacitance is related to the bias voltage thereof, the relation between the APD junction capacitance and the bias voltage thereof can be shown in FIG. 6, and as can be seen from FIG. 6, the target duty ratio corresponding to the pulse width of the signal is determined according to the pre-established relation between the pulse width of the signal and the duty ratio of the PWM signal of the booster circuit, so that the change of the APD junction capacitance can be ensured to be very small, and the rising edge of pulse detection is ensured to be steep on the basis of not changing the basic attribute and the system bandwidth of the circuit, thereby ensuring the measurement accuracy of the pulse laser radar.
Fig. 7 is a schematic diagram of a BOOST circuit according to one or more embodiments of the present invention, in which, in the BOOST circuit, an APD is taken as an example of a silicon-based APD, an avalanche point of the silicon-based APD is above 100V, the BOOST circuit can operate in a DCM (continuous Conduction mode) operating state, as shown in fig. 7, a square wave with a duty ratio of about 25% (which is an example of the above target duty ratio) can be used to drive a Mosfet switch in the BOOST circuit, if a current of an inductor L1 is observed, it can be found that an inductor L1 charges within 2.5s and then operates to a stable state, after the start-up, the L1 charges and discharges rapidly, an output voltage of the BOOST circuit increases slowly, and after an unsteady rise of ms magnitude, the voltage can output 150V stably, it can be seen that a target duty ratio determined based on a signal pulse width can enable the BOOST circuit to ensure a normal operating state of the APD, and protecting the APD.
In one or more embodiments of the present invention, the boosting circuit may be a BOOST chopper circuit, and still take the BOOST boosting circuit shown in fig. 7 as an example, a current mirror device may be disposed between the APD and the boosting circuit, and based on this, the boosting circuit may be controlled according to the pulse width to adjust the bias voltage of the APD, which may include: photocurrent (mirrored photocurrent) is generated by the current mirror device, and a switching device in the BOOST chopper circuit (e.g., a Mosfet switch in the BOOST circuit shown in fig. 7) is controlled to turn on or off by the photocurrent to adjust the bias voltage of the APD, for example, when the pulse width of the determined signal exceeds a pulse width threshold, the Mosfet is controlled to turn on to pull down the bias voltage of the APD, so that oversaturation of the APD can be avoided.
In one or more embodiments of the invention, controlling the voltage boost circuit to adjust the bias voltage of the APD according to the pulse width may include: and when the pulse width is larger than a pulse width threshold value, reducing the duty ratio of the PWM signal of the booster circuit. For example, assuming that the photocurrent received by the APD is 5mA and the corresponding pulse width is 150ns (an example of a pulse width threshold), when the pulse width of the determined signal is greater than 150ns, the duty ratio of the PWM signal input to the BOOST circuit may be correspondingly reduced, and the BOOST circuit may be controlled to operate to reduce the voltage output by the BOOST circuit, so as to adjust the bias voltage of the APD, thereby reducing the gain coefficient of the APD, reducing the photocurrent received by the APD, and thus protecting the APD while ensuring normal operation of the APD.
One or more embodiments of the present invention also provide an APD protection circuit, including: the device comprises a booster circuit, an APD, a transimpedance amplifier, a variable gain amplifier, a pulse width judging unit and a processing unit, wherein the output end of the booster circuit is connected with one end of the APD, the other end of the APD is connected with the input end of the transimpedance amplifier, the output end of the transimpedance amplifier is connected with the input end of the variable gain amplifier, the output end of the variable gain amplifier is connected with the input end of the pulse width judging unit, the output end of the pulse width judging unit is connected with the input end of the processing unit, and the output end of the processing unit is connected with the input end of the booster circuit;
the pulse width discrimination unit is used for acquiring a signal output by the variable gain amplifier and determining the pulse width of the signal based on the signal;
the processing unit is used for controlling the voltage boosting circuit according to the pulse width so as to adjust the bias voltage of the APD.
In one or more embodiments of the present invention, taking the APD protection circuit shown in fig. 4 as an example, the pulse width determining circuit may include a comparator and a TDC, wherein a signal output by the variable gain amplifier is input into the comparator to generate a level signal with a wider pulse width, and the TDC may determine the pulse width of the signal according to the level signal.
In one or more embodiments of the present invention, the processing Unit may be implemented by an MCU (micro controller Unit) or an FPGA (Field Programmable Gate Array).
In one or more embodiments of the invention, the pulse width discrimination circuit includes a TDC for measuring a time instant at which a pair of rising edge level signals and a falling edge level signal of the signal are generated; and determining the pulse width according to the time.
In one or more embodiments of the present invention, the processing unit is specifically configured to:
determining a target duty ratio corresponding to the pulse width according to a preset corresponding relation between the pulse width and the duty ratio of the PWM signal of the booster circuit;
controlling the boost circuit to adjust a bias voltage of the APD according to the target duty cycle.
In one or more embodiments of the present invention, the voltage boost circuit is a boost chopper circuit, a current mirror device is disposed between the APD and the voltage boost circuit, the current mirror device is configured to generate a photocurrent, and a switching device in the voltage boost circuit is turned on or off under the action of the photocurrent to adjust a bias voltage of the APD.
In one or more embodiments of the present invention, the processing unit is specifically configured to:
and when the pulse width is larger than a pulse width threshold value, reducing the duty ratio of the PWM signal of the booster circuit.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on differences from other embodiments.
In particular, as for the apparatus embodiment, since it is substantially similar to the method embodiment, the description is relatively simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
For convenience of description, the above devices are described separately in terms of functional division into various units/modules. Of course, the functionality of the various units/modules may be implemented in the same software and/or hardware in the implementation of the invention.
It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above can be implemented by a computer program, which can be stored in a computer-readable storage medium, and when executed, can include the processes of the embodiments of the methods described above. The storage medium may be a magnetic disk, an optical disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), or the like.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. An APD protection method, applied to an APD protection circuit, where the APD protection circuit includes a voltage boost circuit, a photo avalanche diode APD, a transimpedance amplifier and a variable gain amplifier, where an output terminal of the voltage boost circuit is connected to one terminal of the APD, another terminal of the APD is connected to an input terminal of the transimpedance amplifier, and an output terminal of the transimpedance amplifier is connected to an input terminal of the variable gain amplifier, the method includes:
acquiring a signal output by the variable gain amplifier;
determining a pulse width of the signal based on the signal;
and controlling the boosting circuit according to the pulse width to adjust the bias voltage of the APD.
2. The method of claim 1, wherein determining the pulse width of the signal based on the signal comprises:
measuring the time when a pair of rising edge level signals and falling edge level signals of the signal are generated;
and determining the pulse width according to the time.
3. The method of claim 1, wherein controlling the boost circuit according to the pulse width to adjust a bias voltage adjustment of the APD comprises:
determining a target duty ratio corresponding to the pulse width according to a preset corresponding relation between the pulse width and the duty ratio of a Pulse Width Modulation (PWM) signal of the booster circuit;
controlling the boost circuit to adjust a bias voltage of the APD according to the target duty cycle.
4. The method of claim 1, wherein the voltage boost circuit is a boost chopper circuit with a current mirror device disposed between the APD and the voltage boost circuit, and wherein controlling the voltage boost circuit to adjust the bias voltage of the APD according to the pulse width comprises:
and generating a photocurrent through the current mirror device, and controlling a switching device in the boost chopper circuit to be switched on or switched off through the photocurrent so as to adjust the bias voltage of the APD.
5. The method of any of claims 1 to 4, wherein controlling the voltage boost circuit to adjust the bias voltage of the APD according to the pulse width comprises:
and when the pulse width is larger than a pulse width threshold value, reducing the duty ratio of the PWM signal of the booster circuit.
6. An APD protection circuit, comprising:
the device comprises a booster circuit, a photoelectric avalanche diode (APD), a transimpedance amplifier, a variable gain amplifier, a pulse width judging unit and a processing unit, wherein the output end of the booster circuit is connected with one end of the APD, the other end of the APD is connected with the input end of the transimpedance amplifier, the output end of the transimpedance amplifier is connected with the input end of the variable gain amplifier, the output end of the variable gain amplifier is connected with the input end of the pulse width judging unit, the output end of the pulse width judging unit is connected with the input end of the processing unit, and the output end of the processing unit is connected with the input end of the booster circuit;
the pulse width discrimination unit is used for acquiring a signal output by the variable gain amplifier and determining the pulse width of the signal based on the signal;
the processing unit is used for controlling the voltage boosting circuit according to the pulse width so as to adjust the bias voltage of the APD.
7. The APD protection circuit of claim 6, wherein the pulse width discrimination circuit comprises a time-to-digital converter (TDC) for measuring a time instant at which a pair of rising edge level signals and falling edge level signals of the signal are generated; and determining the pulse width according to the time.
8. The APD protection circuit of claim 6, wherein the processing unit is specifically configured to:
determining a target duty ratio corresponding to the pulse width according to a preset corresponding relation between the pulse width and the duty ratio of a Pulse Width Modulation (PWM) signal of the booster circuit;
controlling the boost circuit to adjust a bias voltage of the APD according to the target duty cycle.
9. The APD protection circuit of claim 6, wherein the voltage boost circuit is a boost chopper circuit, a current mirror device is disposed between the APD and the voltage boost circuit, the current mirror device is configured to generate a photocurrent, and a switching device in the voltage boost circuit is configured to be turned on or off under the photocurrent to adjust a bias voltage of the APD.
10. The APD protection circuit of any of claims 6 to 9, wherein the processing unit is specifically configured to: and when the pulse width is larger than a pulse width threshold value, reducing the duty ratio of the PWM signal of the booster circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110676736.0A CN113489295B (en) | 2021-06-17 | 2021-06-17 | APD (avalanche photo diode) protection method and circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110676736.0A CN113489295B (en) | 2021-06-17 | 2021-06-17 | APD (avalanche photo diode) protection method and circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113489295A CN113489295A (en) | 2021-10-08 |
| CN113489295B true CN113489295B (en) | 2022-06-03 |
Family
ID=77933722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110676736.0A Active CN113489295B (en) | 2021-06-17 | 2021-06-17 | APD (avalanche photo diode) protection method and circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113489295B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114268378B (en) * | 2022-03-01 | 2022-05-17 | 长芯盛（武汉）科技有限公司 | Automatic gain control circuit, optical receiver, and optical communication system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10284954A (en) * | 1997-04-04 | 1998-10-23 | Mitsubishi Electric Corp | Bias voltage control circuit for avalanche photodiode |
| CN102013676A (en) * | 2010-10-21 | 2011-04-13 | 成都优博创技术有限公司 | Protector and protection method of avalanche photodiode (APD) |
| CN105425012A (en) * | 2015-11-10 | 2016-03-23 | 华中科技大学 | APD pixel voltage reading circuit under successive narrow pulses |
| CN107742970A (en) * | 2017-10-11 | 2018-02-27 | 湖北久之洋红外***股份有限公司 | A kind of Si APD bias circuits |
| CN111352097A (en) * | 2018-12-21 | 2020-06-30 | 余姚舜宇智能光学技术有限公司 | Laser Doppler echo signal processing method for laser radar and circuit system thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10784968B2 (en) * | 2018-11-06 | 2020-09-22 | Hisense Broadband Multimedia Technologies Co., Ltd. | Optical module |
-
2021
- 2021-06-17 CN CN202110676736.0A patent/CN113489295B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10284954A (en) * | 1997-04-04 | 1998-10-23 | Mitsubishi Electric Corp | Bias voltage control circuit for avalanche photodiode |
| CN102013676A (en) * | 2010-10-21 | 2011-04-13 | 成都优博创技术有限公司 | Protector and protection method of avalanche photodiode (APD) |
| CN105425012A (en) * | 2015-11-10 | 2016-03-23 | 华中科技大学 | APD pixel voltage reading circuit under successive narrow pulses |
| CN107742970A (en) * | 2017-10-11 | 2018-02-27 | 湖北久之洋红外***股份有限公司 | A kind of Si APD bias circuits |
| CN111352097A (en) * | 2018-12-21 | 2020-06-30 | 余姚舜宇智能光学技术有限公司 | Laser Doppler echo signal processing method for laser radar and circuit system thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113489295A (en) | 2021-10-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6863922B2 (en) | High dynamic range analog front-end receiver for long range riders | |
| US20150364635A1 (en) | Single photon counting | |
| KR101740263B1 (en) | Single photon detector in the near infrared using an InGaAs/InP avalanche photodiode operated with a bipolar rectangular gating signal. | |
| US8155537B2 (en) | Optical receiver circuit and optical coupling device | |
| JP5889152B2 (en) | Light receiving circuit, laser radar | |
| US20210286051A1 (en) | Distance measuring device, and time measurement method based on distance measuring device | |
| CN111983586B (en) | Control method and control system of photoelectric detector and laser radar | |
| US20220069152A1 (en) | Wide-area single-photon detector with time-gating capability | |
| CN114114212B (en) | Pulse signal amplifying circuit, echo signal receiving system and laser radar | |
| US11112494B2 (en) | Photodetector and portable electronic equipment | |
| CN111121986B (en) | Single photon detection system with rear pulse correction function | |
| CN113489295B (en) | APD (avalanche photo diode) protection method and circuit | |
| US10636918B2 (en) | Single electron transistor triggered by photovoltaic diode | |
| Hall et al. | Single photon avalanche detectors: prospects of new quenching and gain mechanisms | |
| WO2018047424A1 (en) | Optical sensor and electronic device | |
| JP2020118695A (en) | Light distance measuring device | |
| KR102368114B1 (en) | Avalanche Photodiode that can Operate as One of Single Photon Detection Devices Operating in Two Different Modes | |
| US20210088661A1 (en) | Photodetector and optical ranging apparatus using the same | |
| RU165106U1 (en) | PHOTO RECEIVER | |
| CN112363148A (en) | Photoelectric detection circuit and photoelectric detector | |
| US20200233065A1 (en) | Optical detector with dc compensation | |
| Beer et al. | Expected value and variance of the indirect time-of-flight measurement with dead time afflicted single-photon avalanche diodes | |
| Liu et al. | A novel quenching circuit to reduce afterpulsing of single photon avalanche diodes | |
| Hintikka et al. | Time domain characterization of avalanche photo detectors for sub-ns optical pulses | |
| Lu et al. | Characterization of sinusoidal gating of InGaAs/InP single photon avalanche diodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: An APD protection method and circuit Effective date of registration: 20231117 Granted publication date: 20220603 Pledgee: Beijing Zhongguancun bank Limited by Share Ltd. Pledgor: BENEWAKE (BEIJING) Co.,Ltd. Registration number: Y2023990000569 |