CN113471299B - Thin film transistor and preparation method thereof - Google Patents
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- CN113471299B CN113471299B CN202110849437.2A CN202110849437A CN113471299B CN 113471299 B CN113471299 B CN 113471299B CN 202110849437 A CN202110849437 A CN 202110849437A CN 113471299 B CN113471299 B CN 113471299B
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- 239000010409 thin film Substances 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title claims description 22
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 88
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 88
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 58
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000010936 titanium Substances 0.000 claims abstract description 40
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000001301 oxygen Substances 0.000 claims abstract description 32
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000010410 layer Substances 0.000 claims description 294
- 239000002243 precursor Substances 0.000 claims description 95
- 238000006243 chemical reaction Methods 0.000 claims description 59
- 239000007789 gas Substances 0.000 claims description 36
- 229910052738 indium Inorganic materials 0.000 claims description 35
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 35
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 34
- 229910052719 titanium Inorganic materials 0.000 claims description 34
- 239000010408 film Substances 0.000 claims description 23
- 238000001179 sorption measurement Methods 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 14
- 238000006073 displacement reaction Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 238000000231 atomic layer deposition Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 10
- 239000002356 single layer Substances 0.000 claims description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 9
- 229910001882 dioxygen Inorganic materials 0.000 claims description 9
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 claims description 8
- SZEJQLSRYARYHS-UHFFFAOYSA-N dimethylindium Chemical compound C[In]C SZEJQLSRYARYHS-UHFFFAOYSA-N 0.000 claims description 7
- 238000006467 substitution reaction Methods 0.000 claims description 7
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 7
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 abstract description 7
- 239000000969 carrier Substances 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 239000012071 phase Substances 0.000 description 60
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 34
- 238000010926 purge Methods 0.000 description 22
- 229910052757 nitrogen Inorganic materials 0.000 description 17
- 239000008367 deionised water Substances 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- 239000012808 vapor phase Substances 0.000 description 7
- 239000006227 byproduct Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010408 sweeping Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000010981 drying operation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- Thin Film Transistor (AREA)
Abstract
The invention provides a thin film transistor, which comprises a grid electrode, an insulating layer and an active layer which are sequentially arranged from bottom to top; an active electrode and a drain electrode are arranged on the active layer; the active layer includes indium oxide layers and titanium oxide layers alternately stacked in this order on the surface of the insulating layer. The invention provides a method for preparing Ti by arranging an active layer of indium oxide layer and titanium oxide layer alternately laminated 4+ Is introduced into the active layer by using Ti 4+ With O 2‑ The strong binding energy inhibits oxygen defects in the thin film transistor, so that the concentration of carriers of the active layer is effectively regulated and controlled, and the current switching ratio of the thin film transistor is further improved. The results of the embodiment show that the thin film transistor provided by the invention has good electrical property, and the current switching ratio is not lower than 10 5 The subthreshold swing is 0.58-0.68V/dec, and the low threshold voltage is 0.52-1.06V.
Description
Technical Field
The invention relates to the technical field of transistors, in particular to a thin film transistor and a preparation method thereof.
Background
With the progress of display technology and the development of portable mobile devices, thin film transistors play an important role in active matrix driving display devices. The thin film transistor belongs to one of the types of field effect transistors, is a bottom gate top contact structure, and sequentially comprises a source electrode, a drain electrode, an active layer, an insulating layer and a gate electrode from top to bottom, wherein the property of the active layer has a significant influence on the overall performance of the device.
Metal oxide semiconductors, which are mainly indium oxide (In 2 O 3 ) TFTs (e.g., inGaZnO) using indium oxide as a main semiconductor material are widely used in the field of flat panel display due to their high mobility, high transparency to visible light, low threshold voltage, and the like. However, the high carrier concentration of intrinsic indium oxide can cause the increase of the off-state current of the thin film transistor, so that the current switching ratio is reduced, and the device cannot show the significanceAnd the TFT characteristics are shown.
Therefore, how to increase the current switching ratio of the indium oxide-based thin film transistor is a challenge to be solved.
Disclosure of Invention
The invention aims to provide a thin film transistor and a preparation method thereof. The thin film transistor provided by the invention has good electrical property and high switching ratio.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a thin film transistor, which comprises a grid electrode, an insulating layer and an active layer which are sequentially arranged from bottom to top; an active electrode and a drain electrode are arranged on the active layer;
the active layer includes indium oxide layers and titanium oxide layers alternately stacked in this order on the surface of the insulating layer.
Preferably, the number of alternations between the indium oxide layer and the titanium oxide layer in the active layer is 15 to 30.
Preferably, the thickness ratio of the single-layer indium oxide layer to the single-layer titanium oxide layer in the active layer is (10 to 15): 1, a step of; the thickness of each indium oxide layer in the active layer is the same, and the thickness of each titanium oxide layer is the same.
Preferably, the thickness ratio of the indium oxide layer and the titanium oxide layer in each alternating period of the alternating stacked arrangement in the active layer is (10 to 15): 1.
preferably, the thickness of the active layer is 10 to 80nm.
The invention also provides a preparation method of the thin film transistor, which comprises the following steps:
preparing a grid electrode on a substrate;
preparing an insulating layer on the gate electrode;
alternately preparing an indium oxide layer and a titanium oxide layer on the insulating layer by adopting an atomic layer deposition technology to obtain an active layer;
and preparing a source electrode and a drain electrode on the active layer.
Preferably, the preparation method of the indium oxide layer comprises the following steps:
(1) Placing the insulating layer in a gas-phase precursor of indium, and performing chemical adsorption to obtain the insulating layer with the gas-phase precursor of indium adsorbed on the surface; the gas phase precursor of indium comprises dimethyl indium and/or trimethyl indium;
(2) Placing the insulating layer with the gas-phase precursor of indium adsorbed on the surface obtained in the step (1) in the gas-phase precursor of oxygen, and performing displacement reaction to obtain an atomic film; the gas phase precursor of oxygen comprises water vapor and/or ozone;
(3) And (3) according to the methods of the steps (1) and (2), carrying out layer-by-layer deposition on the atomic film obtained in the step (2) to obtain an indium oxide layer.
Preferably, the time of chemisorption in step (1) is 50 to 1000ms.
Preferably, the preparation method of the titanium oxide layer comprises the following steps:
1) Placing the indium oxide layer in a gas-phase precursor of titanium, and performing chemical adsorption to obtain the indium oxide layer with the gas-phase precursor of titanium adsorbed on the surface; the gas phase precursor of titanium comprises titanium tetrachloride and/or tetra (dimethylamino) titanium;
2) Placing the indium oxide layer with the titanium gas phase precursor adsorbed on the surface obtained in the step 1) in the oxygen gas phase precursor for substitution reaction to obtain an atomic film; the gas phase precursor of oxygen comprises water vapor and/or ozone;
3) And (3) carrying out layer-by-layer deposition on the atomic film obtained in the step (2) according to the methods of the steps (1) and (2) to obtain a titanium oxide layer.
Preferably, the time of chemisorption in step 1) is 200-800 ms.
Preferably, the time for the shift reaction in the step 2) is 100 to 500ms.
The invention provides a thin film transistor, which comprises a grid electrode, an insulating layer and an active layer which are sequentially arranged from bottom to top; an active electrode and a drain electrode are arranged on the active layer; the active layer includes indium oxide layers and titanium oxide layers alternately stacked in this order on the surface of the insulating layer. The invention provides a method for preparing Ti by arranging an active layer of indium oxide layer and titanium oxide layer alternately laminated 4+ Is introduced intoIn the active layer, ti is used 4+ With O 2- The strong binding energy inhibits oxygen defects in the thin film transistor, so that the concentration of carriers of the active layer is effectively regulated and controlled, and the current switching ratio of the thin film transistor is further improved. The results of the embodiment show that the thin film transistor provided by the invention has good electrical property, and the current switching ratio is not lower than 10 5 The subthreshold swing is 0.58-0.68V/dec, and the low threshold voltage is 0.52-1.06V.
Drawings
Fig. 1 is a schematic structural diagram of a thin film transistor according to the present invention;
FIG. 2 is an electrical property curve of the thin film transistor prepared in example 2;
fig. 3 is an electrical property curve of the thin film transistor prepared in example 3.
Detailed Description
The invention provides a thin film transistor, which comprises a grid electrode, an insulating layer and an active layer which are sequentially arranged from bottom to top; an active electrode and a drain electrode are arranged on the active layer;
the active layer includes indium oxide layers and titanium oxide layers alternately stacked in this order on the surface of the insulating layer.
The structure schematic diagram of the thin film transistor provided by the invention is shown in fig. 1.
As shown in fig. 1, the thin film transistor includes a gate electrode. In the present invention, the material of the gate electrode preferably includes heavily doped silicon and/or ITO glass. In the present invention, the thickness of the heavily doped silicon is preferably 400 to 500 μm, more preferably 450 μm; the thickness of the ITO glass is preferably 1 to 10mm, more preferably 5 to 7mm.
As shown in fig. 1, the thin film transistor further includes an insulating layer disposed on an upper surface of the gate electrode.
In the present invention, the material of the insulating layer preferably includes at least one of zirconia, hafnium oxide, alumina and yttria; the thickness of the insulating layer is preferably 40 to 50nm, more preferably 45nm.
As shown in fig. 1, the thin film transistor further includes an active layer disposed on the upper surface of the insulating layer.
As shown in fig. 1, the active layer includes indium oxide layers and titanium oxide layers alternately stacked in this order on the surface of the insulating layer. The invention provides a method for preparing Ti by arranging an active layer of indium oxide layer and titanium oxide layer alternately laminated 4+ Is introduced into the active layer by using Ti 4+ With O 2- The strong binding energy inhibits oxygen defects in the thin film transistor, so that the concentration of carriers of the active layer is effectively regulated and controlled, and the current switching ratio of the thin film transistor is further improved.
In the present invention, the number of alternations between the indium oxide layer and the titanium oxide layer in the active layer is preferably 15 to 30, more preferably 17 to 23, and still more preferably 20. The invention can further improve the current switching ratio of the thin film transistor by controlling the alternating times of the indium oxide layer and the titanium oxide layer in the active layer.
In the present invention, the thickness ratio of the single-layer indium oxide layer and the single-layer titanium oxide layer in the active layer is preferably (10 to 15): 1, more preferably (12 to 18): 1, more preferably 15:1, a step of; the thickness of each indium oxide layer in the active layer is preferably the same; the thickness of each titanium oxide layer in the active layer is preferably the same. According to the invention, the thickness ratio of the indium oxide layer to the titanium oxide layer in each alternate period is controlled, the thickness of each indium oxide layer is the same, and the thickness of each titanium oxide layer is the same, so that the content of titanium oxide in the active layer is controlled, the regulation and control of the titanium content in the active layer are realized, the concentration of carriers in the active layer is improved, and the current switching ratio and the electrical stability of the thin film transistor are further improved.
In the present invention, the thickness of the active layer is preferably 10 to 80nm, more preferably 20 to 60nm, and even more preferably 21 to 50nm.
In the present invention, the active layer is provided with an active electrode and a drain electrode. In the present invention, the source electrode and the drain electrode are preferably made of at least one material selected from the group consisting of aluminum, copper, silver, molybdenum, and indium tin oxide. In the present invention, the thickness of the source electrode and the drain electrode is independently preferably 100 to 300nm, more preferably 200nm.
The invention is realized by combining an active layerAn indium oxide layer and a titanium oxide layer arranged alternately, ti 4+ Is introduced into the active layer by using Ti 4+ With O 2- The strong combination energy inhibits oxygen defects in the thin film transistor, thereby effectively regulating and controlling the concentration of carriers of the active layer, further improving the current switching ratio of the thin film transistor and solving the problem that the device cannot be turned off due to high-concentration oxygen vacancies in the device in the indium oxide thin film transistor in the prior art.
The thin film transistor provided by the invention has the advantages of low cost, high mobility and high switching ratio, can be applied to the fields of transistors, CMOS, gas sensing, temperature sensing, biomedical sensing, optical regulation and the like, and has wide application prospects.
The invention also provides a preparation method of the thin film transistor, which comprises the following steps:
preparing a grid electrode on a substrate;
preparing an insulating layer on the gate electrode;
alternately preparing an indium oxide layer and a titanium oxide layer on the insulating layer by adopting an atomic layer deposition technology to obtain an active layer;
and preparing a source electrode and a drain electrode on the active layer.
The invention prepares a gate electrode on a substrate.
The material of the substrate is not particularly limited, and a substrate known to those skilled in the art may be used. The size of the substrate is not particularly limited, and the substrate can be adjusted according to actual use requirements.
The invention preferably firstly washes and dries the substrate in sequence, and then prepares the grid on the substrate. The washing and drying operation is not particularly limited in the present invention, and washing and drying techniques well known to those skilled in the art may be employed. The operation of preparing the gate electrode on the substrate is not particularly limited, and a preparation method well known to those skilled in the art may be adopted.
After the gate electrode is obtained, an insulating layer is prepared on the gate electrode.
The operation of forming the insulating layer on the gate electrode is not particularly limited, and may be performed by a manufacturing operation well known to those skilled in the art.
After the insulating layer is obtained, the invention adopts an atomic layer deposition technology to alternately prepare the indium oxide layer and the titanium oxide layer on the insulating layer to obtain the active layer. The invention adopts atomic layer deposition technology to deposit the active layer by layer in an atomic level mode, and can accurately regulate and control the thickness of the indium oxide layer and the titanium oxide layer in the active layer.
In the invention, the preparation method of the indium oxide layer comprises the following steps:
(1) Placing the insulating layer in a gas-phase precursor of indium, and performing chemical adsorption to obtain the insulating layer with the gas-phase precursor of indium adsorbed on the surface; the gas phase precursor of indium comprises dimethyl indium and/or trimethyl indium;
(2) Placing the insulating layer with the gas-phase precursor of indium adsorbed on the surface obtained in the step (1) in the gas-phase precursor of oxygen, and performing displacement reaction to obtain an atomic film; the gas phase precursor of oxygen comprises water vapor and/or ozone;
(3) And (3) according to the methods of the steps (1) and (2), carrying out layer-by-layer deposition on the atomic film obtained in the step (2) to obtain an indium oxide layer.
In the invention, the insulating layer is preferably placed in the gas-phase precursor of indium, and chemical adsorption is carried out to obtain the insulating layer with the gas-phase precursor of indium adsorbed on the surface. According to the invention, the insulating layer is placed in the gas-phase precursor of indium, and the gas-phase precursor of indium is adsorbed on the surface of the insulating layer due to the chemical adsorption effect and reacts with active groups on the surface of the insulating layer to produce gaseous byproducts.
In the present invention, the vapor phase precursor of indium preferably includes dimethyl indium and/or trimethyl indium (TMIn); the dimethyl indium is preferably DADI (3 (dimethyl amine) propyl) dimethyl lindium. The sources of the dimethyl indium and trimethyl indium are not particularly limited in the present invention, and commercially available products known to those skilled in the art may be used. The vapor phase precursor of indium in the present invention is used to provide an indium source.
In the present invention, the chemisorption is preferably performed in a vacuum reaction chamber; the chemisorption temperature is preferably 200 to 300 ℃, more preferably 230 to 270 ℃; the vacuum of the chemisorption is preferably not higher than 7mbar; the time for the chemisorption is preferably 50 to 1000ms, more preferably 100 to 500ms, and still more preferably 200 to 300ms. The source of the vacuum reaction chamber is not particularly limited, and the vacuum reaction chamber can be manufactured by using instruments and equipment well known to those skilled in the art. The time of chemisorption in the present invention can achieve saturated adsorption of the indium source on the surface of the insulating layer within the above-described range.
In the invention, the gas-phase precursor of the indium is preferably introduced into the vacuum reaction cavity in a pulse mode; the temperature of the gas-phase precursor of indium when the precursor is introduced into the vacuum reaction chamber is preferably 30-40 ℃, more preferably 35 ℃. According to the invention, an indium source can be introduced into the vacuum reaction cavity in a pulse mode, so that chemical adsorption is realized.
In the invention, before the gas-phase precursor of indium is introduced into the vacuum reaction cavity in a pulse mode, shielding gas is preferably introduced into the vacuum reaction cavity; the shielding gas is preferably nitrogen. The amount of the protective gas introduced is not particularly limited, and the protective gas can be ensured to completely replace the air in the vacuum reaction cavity. The protection gas is introduced into the vacuum reaction cavity to completely replace the gas in the vacuum reaction cavity, so that the influence of air on the subsequent chemical adsorption reaction is avoided.
After the chemical adsorption is finished, the vacuum reaction cavity is preferably purged by nitrogen, so that the insulating layer of the gas-phase precursor with the indium adsorbed on the surface is obtained. The nitrogen purging operation is not particularly limited, and nitrogen purging operation well known to those skilled in the art may be employed. The nitrogen purging is adopted in the invention to remove the redundant gas phase precursor and gas phase byproducts of indium in the vacuum reaction cavity.
After the insulating layer with the gas-phase precursor of indium adsorbed on the surface is obtained, the insulating layer with the gas-phase precursor of indium adsorbed on the surface is preferably placed in the gas-phase precursor of oxygen for substitution reaction, so that the indium oxide layer is obtained. According to the invention, the insulating layer with the surface adsorbed with the gas-phase precursor of indium is placed in the gas-phase precursor of oxygen, and the gas-phase precursor of oxygen can undergo a displacement reaction with the gas-phase precursor of indium on the surface of the insulating layer, so that the indium oxide layer is obtained.
In the present invention, the oxygen vapor precursor preferably includes deionized water and/or ozone. The source of deionized water and ozone is not particularly limited in the present invention, and commercially available products known to those skilled in the art may be used. The oxygen vapor precursor of the present invention is used to provide an oxygen source.
In the present invention, the displacement reaction is preferably performed in a vacuum reaction chamber; the vacuum reaction cavity is preferably a vacuum reaction cavity adopted in the chemical adsorption process; the temperature of the displacement reaction is preferably 200-300 ℃, more preferably 230-270 ℃; the vacuum of the displacement reaction is preferably not higher than 7mbar; the time for the displacement reaction is preferably 100 to 500ms, more preferably 200 to 300ms. The time for the replacement reaction in the invention can enable the indium source and the oxygen source on the surface of the insulating layer to fully react to obtain the required indium oxide layer.
In the present invention, the gaseous precursor of oxygen is preferably pulsed into the vacuum reaction chamber; the temperature of the oxygen gas phase precursor when introduced into the vacuum reaction chamber is preferably room temperature.
After the replacement reaction is completed, the atomic film is obtained by sweeping the vacuum reaction cavity with nitrogen. The nitrogen purging operation is not particularly limited, and nitrogen purging operation well known to those skilled in the art may be employed. The invention adopts nitrogen to purge gas phase precursor and gas phase by-product which can remove redundant oxygen in the vacuum reaction cavity.
After the atomic film is obtained, the present invention preferably performs layer-by-layer deposition on the atomic film according to the foregoing operation to obtain an indium oxide layer.
In the present invention, the preparation method of the titanium oxide layer preferably includes the steps of:
1) Placing the indium oxide layer in a gas-phase precursor of titanium, and performing chemical adsorption to obtain the indium oxide layer with the gas-phase precursor of titanium adsorbed on the surface; the gas phase precursor of titanium comprises titanium tetrachloride and/or tetra (dimethylamino) titanium;
2) Placing the indium oxide layer with the titanium gas phase precursor adsorbed on the surface obtained in the step 1) in the oxygen gas phase precursor for substitution reaction to obtain an atomic film; the gas phase precursor of oxygen comprises water vapor and/or ozone;
3) And (3) carrying out layer-by-layer deposition on the atomic film obtained in the step (2) according to the methods of the steps (1) and (2) to obtain a titanium oxide layer.
In the invention, the indium oxide layer is preferably placed in a gas-phase precursor of titanium, and chemisorption is performed to obtain the indium oxide layer with the gas-phase precursor of titanium adsorbed on the surface. According to the invention, the indium oxide layer is placed in the gas-phase precursor of titanium, and the gas-phase precursor of titanium is adsorbed on the surface of the indium oxide layer due to the chemical adsorption effect and reacts with active groups on the surface of the indium oxide layer, so that gaseous byproducts are generated by the reaction.
In the present invention, the vapor phase precursor of titanium preferably includes titanium tetrachloride and/or tetra (dimethylamino) titanium. The sources of the titanium tetrachloride and tetra (dimethylamino) titanium are not particularly limited in the present invention, and commercially available products known to those skilled in the art may be used. The vapor phase precursor of titanium is used to provide a source of titanium in the present invention.
In the present invention, the chemisorption is preferably performed in a vacuum reaction chamber; the vacuum reaction cavity is preferably a vacuum reaction cavity adopted in the preparation of the indium oxide layer; the chemisorption temperature is preferably 200 to 300 ℃, more preferably 230 to 270 ℃; the vacuum of the chemisorption is preferably not higher than 7mbar; the time for the chemisorption is preferably 200 to 800ms, more preferably 500 to 600ms. The time of chemisorption in the present invention can achieve saturated adsorption of the titanium source on the surface of the indium oxide layer within the above-described range.
In the invention, the gas-phase precursor of titanium is preferably introduced into the vacuum reaction chamber in a pulse mode; the temperature of the gas-phase precursor of titanium when being introduced into the vacuum reaction chamber is preferably 40-50 ℃, more preferably 45 ℃.
After the chemical adsorption is finished, the vacuum reaction cavity is preferably purged by nitrogen, so that the indium oxide layer with the gas-phase precursor of titanium adsorbed on the surface is obtained. The nitrogen purging operation is not particularly limited, and nitrogen purging operation well known to those skilled in the art may be employed. The nitrogen purging is adopted in the invention to remove the redundant gas phase precursor and the gas phase by-product of the titanium in the vacuum reaction cavity.
After obtaining the indium oxide layer having the titanium vapor phase precursor adsorbed on the surface, the present invention preferably places the indium oxide layer having the titanium vapor phase precursor adsorbed on the surface in the oxygen vapor phase precursor, and performs a substitution reaction to obtain the atomic film. According to the invention, the indium oxide layer with the titanium gas phase precursor adsorbed on the surface is placed in the oxygen gas phase precursor, and the oxygen gas phase precursor can undergo a substitution reaction with the titanium gas phase precursor on the surface of the indium oxide layer to obtain the titanium oxide layer.
In the present invention, the oxygen vapor precursor preferably includes deionized water and/or ozone. The source of deionized water and ozone is not particularly limited in the present invention, and commercially available products known to those skilled in the art may be used. The oxygen vapor precursor of the present invention is used to provide an oxygen source.
In the present invention, the displacement reaction is preferably performed in a vacuum reaction chamber; the vacuum reaction cavity is preferably a vacuum reaction cavity adopted by the chemical adsorption; the temperature of the displacement reaction is preferably 200-300 ℃, more preferably 230-270 ℃; the vacuum of the displacement reaction is preferably not higher than 7mbar; the time for the displacement reaction is preferably 100 to 500ms, more preferably 250 to 300ms. The time for the shift reaction in the invention can lead the titanium source and the oxygen source on the surface of the indium oxide layer to fully react to obtain the required titanium oxide layer.
In the present invention, the gaseous precursor of oxygen is preferably pulsed into the vacuum reaction chamber; the temperature of the oxygen gas phase precursor is preferably room temperature.
After the replacement reaction is completed, the atomic film is obtained by sweeping the vacuum reaction cavity with nitrogen. The nitrogen purging operation is not particularly limited, and nitrogen purging operation well known to those skilled in the art may be employed. The nitrogen purging is adopted in the invention to remove the redundant oxygen gas phase precursor and the gaseous byproducts in the vacuum reaction cavity.
After the atomic film is obtained, the present invention preferably performs layer-by-layer deposition on the atomic film according to the aforementioned operation to obtain a titanium oxide layer.
In the present invention, the chemisorption time and the displacement reaction time in the preparation of the indium oxide layer and the titanium oxide layer are independently preferably the opening time of the electromagnetic valve. The invention controls the dosage of each gas phase precursor by controlling the opening time of the electromagnetic valve, which is common knowledge in the field.
According to the invention, the indium oxide layer and the titanium oxide layer are prepared by adopting an atomic layer deposition technology, the thicknesses of the indium oxide layer and the titanium oxide layer in the active layer can be accurately regulated and controlled, the controllability and the repeatability of the growth process are good, and the element proportion can be rapidly regulated by only regulating the cycle times of the indium oxide layer and the titanium oxide layer in the active layer.
After the active layer is obtained, the invention prepares a source electrode and a drain electrode on the active layer.
The operation of preparing the source electrode and the drain electrode on the active layer is not particularly limited, and may be a preparation operation well known to those skilled in the art.
The preparation method of the thin film transistor provided by the invention has the advantages of simple process and low cost.
The technical solutions of the present invention will be clearly and completely described in the following in connection with the embodiments of the present invention. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
The thin film transistor of the embodiment comprises a grid electrode, an insulating layer and an active layer which are sequentially arranged from bottom to top; an active electrode and a drain electrode are arranged on the active layer;
the active layer includes indium oxide layers and titanium oxide layers alternately stacked in this order on the surface of the insulating layer.
Example 2
As shown in fig. 1, the thin film transistor of the present embodiment is composed of a gate electrode, an insulating layer, and an active layer, which are sequentially disposed from bottom to top; an active electrode and a drain electrode are arranged on the active layer;
the material of the grid electrode is heavily doped silicon, and the thickness is 450 mu m;
the insulating layer is made of aluminum oxide and has a thickness of 50nm;
the active layer is composed of indium oxide layers and titanium oxide layers which are sequentially and alternately laminated on the surface of the insulating layer;
wherein the number of alternations between the indium oxide layer and the titanium oxide layer in the active layer is 20; the thickness ratio of the single-layer indium oxide layer to the single-layer titanium oxide layer in the active layer was 15:1, a step of; the thickness of each indium oxide layer in the active layer is the same, and the thickness of each titanium oxide layer is the same; the thickness of the active layer is 21nm;
the source electrode and the drain electrode are made of aluminum; the thickness is 200nm;
the preparation method of the thin film transistor comprises the following steps:
(1) Cleaning and drying the heavily doped silicon to obtain a grid electrode;
(2) Preparing an insulating layer on the grid electrode by adopting an atomic layer deposition method;
the method comprises the following specific steps of:
1) Placing the grid electrode into a vacuum reaction cavity, adopting a mechanical pump to vacuum to 7mbar, and always vacuumizing the mechanical pump in the whole process, wherein N is the same as the total number of the grid electrode 2 The first flow is controlled by a flowmeter to be directly introduced into the inner reaction cavity and the outer wall of the inner reaction cavity, the flow rate of the inner reaction cavity is 300sccm, and the flow rate of the outer wall of the inner reaction cavity is 800sccm;
2) After the internal reaction cavity is heated to 200 ℃, the electromagnetic valve is opened, TMA is introduced for 200ms, then the electromagnetic valve is closed, and then N is adopted 2 Purging for 5 seconds, then charging deionized water at room temperature for 300ms, then closing the electromagnetic valve, and finally N 2 Purging for 5 seconds, and repeating the step for 500 times to obtain an alumina insulating layer;
(3) The method comprises the following steps of alternately preparing an indium oxide layer and a titanium oxide layer on the insulating layer by adopting an atomic layer deposition technology, wherein the specific steps of obtaining an active layer are as follows:
1) Will insulateThe layers are placed into a vacuum reaction cavity, a mechanical pump is adopted to vacuumize to 7mbar, and the mechanical pump is always vacuumized in the whole process, N 2 The flow meter is used for controlling the first flow to be directly introduced into the inner reaction cavity and the outer wall of the inner reaction cavity, the flow rate of the inner reaction cavity is 300, and the flow rate of the outer wall of the inner reaction cavity is 800sccm;
2) After the internal reaction cavity is heated to 200 ℃, the solenoid valve is opened, DADI with the temperature of 35 ℃ is introduced into the solenoid valve for 200ms, then the solenoid valve is closed, and then N is adopted 2 Purging for 5 seconds, then introducing ozone at room temperature for 300ms, then closing the electromagnetic valve, and finally N 2 Purging for 5 seconds, and repeating the step for 15 times to obtain an indium oxide layer;
3) Opening the solenoid valve to introduce tetra (dimethylamino) titanium at 45 ℃ for 500ms, and then closing the solenoid valve, wherein N is adopted 2 Purging for 5 seconds, then introducing deionized water at room temperature for 250ms, closing the electromagnetic valve, and adopting N 2 Purging for 5 seconds, and repeating the step for 1 time to obtain a titanium oxide layer;
4) Repeating the steps 2) and 3) for 20 times to prepare an active layer;
(4) Preparing a source electrode and a drain electrode on the active layer by adopting a thermal evaporation method to obtain a thin film transistor;
the method comprises the following specific steps of: channel length x width (1000 μm x 100 μm), defined by a stainless steel mask, evacuated to 5 x 10 by mechanical and molecular pumps -4 Pa, adjusting a power supply heating button to start heating until aluminum starts to evaporate, and closing the heating button until the crystal oscillator indication number reaches a value for preparing 200nm aluminum.
The thin film transistor prepared in example 2 was subjected to an electrical property test, and the result is shown in fig. 2.
As can be seen from fig. 2, the switching ratio of the thin film transistor with the bottom gate top contact structure provided in this embodiment is 10 6 The subthreshold swing is 0.58V/dec and the low threshold voltage is 0.52V.
Example 3
As shown in fig. 1, the thin film transistor of the present embodiment is composed of a gate electrode, an insulating layer, and an active layer, which are sequentially disposed from bottom to top; an active electrode and a drain electrode are arranged on the active layer;
the grid is made of ITO glass and has a thickness of 7mm;
the insulating layer is made of hafnium oxide and has a thickness of 40nm;
the active layer is composed of indium oxide layers and titanium oxide layers which are sequentially and alternately laminated on the surface of the insulating layer;
wherein the number of alternations between the indium oxide layer and the titanium oxide layer in the active layer is 30; the thickness ratio of the single-layer indium oxide layer to the single-layer titanium oxide layer in the active layer is 10:1, a step of; the thickness of each indium oxide layer in the active layer is the same, and the thickness of each titanium oxide layer is the same; the thickness of the active layer is 21nm;
the source electrode and the drain electrode are made of aluminum; the thickness is 200nm;
the preparation method of the thin film transistor comprises the following steps:
(1) Washing and drying ITO glass to obtain a grid electrode;
(2) Preparing an insulating layer on the grid electrode by adopting an atomic layer deposition method; wherein the specific procedure was the same as in example 2;
(3) The method comprises the following steps of alternately preparing an indium oxide layer and a titanium oxide layer on the insulating layer by adopting an atomic layer deposition technology, wherein the specific steps of obtaining an active layer are as follows:
1) Placing the insulating layer into a vacuum reaction cavity, vacuumizing to 7mbar by adopting a mechanical pump, and vacuumizing all the time by adopting the mechanical pump in the whole process, wherein N is 2 The flow meter is used for controlling the first flow to be directly introduced into the inner reaction cavity and the outer wall of the inner reaction cavity, the flow rate of the inner reaction cavity is 300, and the flow rate of the outer wall of the inner reaction cavity is 800sccm;
2) After the internal reaction cavity is heated to 200 ℃, the solenoid valve is opened, DADI with the temperature of 35 ℃ is introduced into the solenoid valve for 200ms, then the solenoid valve is closed, and then N is adopted 2 Purging for 5 seconds, then introducing ozone at room temperature for 300ms, then closing the electromagnetic valve, and finally N 2 Purging for 5 seconds, and repeating the step for 10 times to obtain an indium oxide layer;
3) Opening the solenoid valve to introduce tetra (dimethylamino) titanium at 45 ℃ for 500ms, and then closing the solenoid valve, wherein N is adopted 2 Purging for 5 seconds, then introducing deionized water at room temperature for 250ms, closing the electromagnetic valve, and adopting N 2 Purging for 5 seconds, and repeating the step for 1 time to obtain a titanium oxide layer;
4) Repeating the steps 2) and 3) for 30 times to prepare an active layer;
(4) A source electrode and a drain electrode were prepared on the active layer by a thermal evaporation method to obtain a thin film transistor, wherein the specific procedure was the same as in example 2.
The thin film transistor prepared in example 3 was subjected to an electrical property test, and the result is shown in fig. 3.
As can be seen from fig. 3, the switching ratio of the thin film transistor with the bottom gate top contact structure provided in this embodiment is 10 5 The subthreshold swing is 0.68V/dec and the low threshold voltage is 1.06V.
As can be seen from the above embodiments, the thin film transistor provided by the present invention has good electrical properties and high on-off ratio.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (6)
1. A thin film transistor comprises a grid electrode, an insulating layer and an active layer which are sequentially arranged from bottom to top; an active electrode and a drain electrode are arranged on the active layer;
the active layer is formed by sequentially and alternately stacking indium oxide layers and titanium oxide layers on the surface of the insulating layer;
the alternating times of the indium oxide layer and the titanium oxide layer in the active layer are 15-30;
the thickness ratio of the single-layer indium oxide layer to the single-layer titanium oxide layer in the active layer is (10-15): 1, a step of; the thickness of each indium oxide layer in the active layer is the same, and the thickness of each titanium oxide layer is the same;
the preparation method of the thin film transistor comprises the following steps:
preparing a grid electrode on a substrate;
preparing an insulating layer on the gate electrode;
alternately preparing an indium oxide layer and a titanium oxide layer on the insulating layer by adopting an atomic layer deposition technology to obtain an active layer;
preparing a source electrode and a drain electrode on the active layer;
the preparation method of the indium oxide layer comprises the following steps:
(1) Placing the insulating layer in a gas-phase precursor of indium, and performing chemical adsorption to obtain the insulating layer with the gas-phase precursor of indium adsorbed on the surface; the gas phase precursor of indium comprises dimethyl indium and/or trimethyl indium;
(2) Placing the insulating layer with the gas-phase precursor of indium adsorbed on the surface obtained in the step (1) in the gas-phase precursor of oxygen, and performing displacement reaction to obtain an atomic film; the gas phase precursor of oxygen comprises water vapor and/or ozone;
(3) According to the methods of the steps (1) and (2), carrying out layer-by-layer deposition on the atomic film obtained in the step (2) to obtain an indium oxide layer;
the preparation method of the titanium oxide layer comprises the following steps:
1) Placing the indium oxide layer in a gas-phase precursor of titanium, and performing chemical adsorption to obtain the indium oxide layer with the gas-phase precursor of titanium adsorbed on the surface; the gas phase precursor of titanium comprises titanium tetrachloride and/or tetra (dimethylamino) titanium;
2) Placing the indium oxide layer with the titanium gas phase precursor adsorbed on the surface obtained in the step 1) in the oxygen gas phase precursor for substitution reaction to obtain an atomic film; the gas phase precursor of oxygen comprises water vapor and/or ozone;
3) And (3) carrying out layer-by-layer deposition on the atomic film obtained in the step (2) according to the methods of the steps (1) and (2) to obtain a titanium oxide layer.
2. The thin film transistor according to claim 1, wherein a thickness of the active layer is 10 to 80nm.
3. A method of manufacturing a thin film transistor according to any one of claims 1 to 2, comprising the steps of:
preparing a grid electrode on a substrate;
preparing an insulating layer on the gate electrode;
alternately preparing an indium oxide layer and a titanium oxide layer on the insulating layer by adopting an atomic layer deposition technology to obtain an active layer;
preparing a source electrode and a drain electrode on the active layer;
the preparation method of the indium oxide layer comprises the following steps:
(1) Placing the insulating layer in a gas-phase precursor of indium, and performing chemical adsorption to obtain the insulating layer with the gas-phase precursor of indium adsorbed on the surface; the gas phase precursor of indium comprises dimethyl indium and/or trimethyl indium;
(2) Placing the insulating layer with the gas-phase precursor of indium adsorbed on the surface obtained in the step (1) in the gas-phase precursor of oxygen, and performing displacement reaction to obtain an atomic film; the gas phase precursor of oxygen comprises water vapor and/or ozone;
(3) According to the methods of the steps (1) and (2), carrying out layer-by-layer deposition on the atomic film obtained in the step (2) to obtain an indium oxide layer;
the preparation method of the titanium oxide layer comprises the following steps:
1) Placing the indium oxide layer in a gas-phase precursor of titanium, and performing chemical adsorption to obtain the indium oxide layer with the gas-phase precursor of titanium adsorbed on the surface; the gas phase precursor of titanium comprises titanium tetrachloride and/or tetra (dimethylamino) titanium;
2) Placing the indium oxide layer with the titanium gas phase precursor adsorbed on the surface obtained in the step 1) in the oxygen gas phase precursor for substitution reaction to obtain an atomic film; the gas phase precursor of oxygen comprises water vapor and/or ozone;
3) And (3) carrying out layer-by-layer deposition on the atomic film obtained in the step (2) according to the methods of the steps (1) and (2) to obtain a titanium oxide layer.
4. The method according to claim 3, wherein the chemisorption time in the step (1) is 50 to 1000ms.
5. A method according to claim 3, wherein the chemisorption time in step 1) is 200 to 800ms.
6. The method according to claim 3, wherein the time for the shift reaction in the step 2) is 100 to 500ms.
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