CN113471123B - Wafer vertical rotation processing equipment and ventilation system applied by same - Google Patents
Wafer vertical rotation processing equipment and ventilation system applied by same Download PDFInfo
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- CN113471123B CN113471123B CN202110761694.0A CN202110761694A CN113471123B CN 113471123 B CN113471123 B CN 113471123B CN 202110761694 A CN202110761694 A CN 202110761694A CN 113471123 B CN113471123 B CN 113471123B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67715—Changing the direction of the conveying path
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67718—Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The application discloses a wafer vertical rotation processing device and a ventilation system applied to the same, wherein the wafer vertical rotation processing device comprises: a clamping mechanism for rotating the wafer vertically, a supply arm for delivering a fluid, a ventilation system for creating a dynamic gas flow within the wafer processing chamber; the ventilation system comprises an air inlet assembly and an air exhaust assembly, external air is introduced from an air inlet pipeline arranged below the air inlet cover and is introduced into the wafer processing chamber through an air inlet of the air inlet panel, and the air in the chamber enters the annular air exhaust cover from an air outlet of the air exhaust back plate to be collected and is led out to a lower air exhaust pipeline through a bottom leading-out structure of the annular air exhaust cover; the air inlets with different areas on the air inlet panel are distributed in a specific mode, the air inlets are in a step hole shape, the air inlets comprise a first through hole positioned on the air inlet side and a second through hole positioned on the air outlet side, and the sectional area of the first through hole is different from that of the second through hole so as to adjust the air flow flowing through the air inlets.
Description
Technical Field
The application relates to the technical field of chemical mechanical polishing post-treatment, in particular to wafer vertical rotation treatment equipment and a ventilation system applied to the same.
Background
Chemical mechanical polishing (Chemical Mechanical Planarization, CMP) is a globally planarized ultra-precise surface finishing process. Since a large amount of chemicals and abrasives used in chemical mechanical polishing remain on the wafer surface after polishing, a large amount of contaminants such as abrasive particles and polishing byproducts, which may adversely affect the subsequent process and may result in wafer yield loss. Post-treatment processes, typically consisting of cleaning and drying, are required to provide a smooth and clean wafer surface after chemical mechanical polishing.
In the process of wafer post-treatment, ventilation is required to be continuously carried out in the process chamber, and a flow field generated by gas flow in the process chamber can influence wafer drying, and in particular, the wafer post-treatment can be adversely affected when the gas flow field in the process chamber is unevenly distributed. Therefore, how to provide a ventilation system with better effect is a problem to be solved at present.
Disclosure of Invention
The embodiment of the application provides wafer vertical rotation processing equipment and a ventilation system applied to the same, and aims to at least solve one of the technical problems in the prior art.
The first aspect of the embodiment of the application provides a ventilation system applied to wafer vertical rotation processing equipment, the ventilation system is used for forming dynamic airflow in a wafer processing chamber, the ventilation system comprises an air inlet component positioned on one surface of the wafer processing chamber and an air outlet component positioned on the other surface opposite to the wafer processing chamber, the air inlet component comprises an air inlet panel and an air inlet cover, a plurality of through air inlets are arranged on the air inlet panel, the air outlet component comprises an air outlet back plate and an annular air outlet cover, external air is introduced from an air inlet pipeline arranged below the air inlet cover and introduced into the wafer processing chamber through the air inlet of the air inlet panel, and the air in the wafer processing chamber enters the annular air outlet cover from an air outlet of the air outlet back plate to be collected and is led out from an air outlet pipeline below the annular air outlet cover through a bottom leading-out structure of the annular air outlet cover;
the air inlets with different areas on the air inlet panel are distributed in a specific mode, the air inlets are in a step hole shape, the air inlets comprise a first through hole positioned at the air inlet side and a second through hole positioned at the air outlet side, and the sectional area of the first through hole is different from that of the second through hole so as to adjust the air flow flowing through the air inlets.
In one embodiment, the cross-sectional areas of the first through holes of the air inlets at different positions on the air inlet panel are not identical to make the air flow of each air inlet uniform, and the cross-sectional areas of the second through holes of each air inlet are identical to make the air flow velocity of each air inlet sprayed into the wafer processing chamber substantially uniform.
In one embodiment, the cross-sectional area of the first through hole of the air inlet located in the center region of the air inlet panel is larger than the cross-sectional area of the first through hole of the air inlet located in the edge region.
In one embodiment, the cross-sectional area of the first through holes of the air inlet at a preset position of the annular region of the air inlet panel is the maximum value of all the first through holes, wherein the annular region is positioned between the central region and the edge region.
In one embodiment, the cross-sectional area of the first via is smaller than the cross-sectional area of the second via.
In one embodiment, the first and second through holes are each of a cylindrical configuration, the first through hole being concentric with the second through hole.
In one embodiment, the ratio of the length of the second through hole to the length of the first through hole is between 1 and 20.
In one embodiment, the first through hole has an inner diameter of 0.1 to 30mm and the second through hole has an inner diameter of 0.1 to 30mm.
In one embodiment, the first through hole has a length of 0.1 to 20mm and the second through hole has a length of 0.1 to 100mm.
A second aspect of an embodiment of the present application provides a wafer vertical rotation processing apparatus, including: a clamping mechanism for rotating the wafer vertically and a supply arm for delivering a fluid; the supply arm is vertically swingable and supplies a fluid onto a wafer via a jetting mechanism provided at a free end thereof; also included is a ventilation system as described above.
The beneficial effects of the embodiment of the application include: through optimizing the structure and the size of the air inlet on the air inlet panel, the problem that the air quantity of the air inlet is uneven due to the fact that the actual air quantity of different air inlets is influenced by the air inlet structure and the position of the air inlet is solved, the uniformity of air flow distribution in the wafer processing chamber is remarkably improved, and then the effect of cleaning and drying wafers is improved.
Drawings
The advantages of the present application will become more apparent and more readily appreciated from the detailed description given in conjunction with the following drawings, which are meant to be illustrative only and not limiting of the scope of the application, wherein:
FIG. 1 is a perspective view of a wafer vertical rotation processing apparatus according to one embodiment of the present application;
FIG. 2 is a schematic view of the internal structure of a wafer processing chamber of a wafer vertical rotation processing apparatus according to an embodiment of the present application;
FIG. 3 is a perspective view of a wafer vertical rotation processing apparatus according to an embodiment of the present application with an air inlet cover removed;
FIG. 4 is a front view of a wafer vertical rotation processing apparatus according to an embodiment of the present application with an air inlet cover removed;
FIG. 5a is a schematic diagram of an air inlet according to an embodiment of the present application;
fig. 5b is a schematic structural diagram of an air inlet according to another embodiment of the present application;
FIG. 6 is a schematic diagram of a partition of an air inlet panel according to an embodiment of the present application;
FIG. 7 is a perspective view of a wafer vertical rotation processing apparatus according to one embodiment of the present application;
fig. 8 is a front view of a wafer vertical rotation processing apparatus according to an embodiment of the present application with an annular exhaust hood removed.
Detailed Description
The following describes the technical scheme of the present application in detail with reference to specific embodiments and drawings thereof. The examples described herein are specific embodiments of the present application for illustrating the concept of the present application; the description is intended to be illustrative and exemplary in nature and should not be construed as limiting the scope of the application in its aspects. In addition to the embodiments described herein, those skilled in the art can adopt other obvious solutions based on the disclosure of the claims and the specification thereof, including those adopting any obvious substitutions and modifications to the embodiments described herein. It should be understood that the following description of the embodiments of the present application, unless specifically stated otherwise, is established in the natural state of the relevant devices, apparatuses, components, etc. in which no external control signal or driving force is given, in order to facilitate understanding.
In addition, it is noted that terms used herein such as front, back, upper, lower, left, right, top, bottom, front, back, horizontal, vertical, etc. are merely for convenience of description and are not intended to limit any device or structure orientation to aid in understanding the relative position or orientation.
In order to illustrate the technical scheme of the application, the following description is made by specific examples.
In the present application, chemical mechanical polishing (Chemical Mechanical Polishing) is also called chemical mechanical planarization (Chemical Mechanical Planarization), and wafer is also called substrate, and its meaning and actual effect are equivalent.
As shown in fig. 1 and 2, a wafer vertical rotation processing apparatus 1 according to the present application includes: the case 10, the clamping mechanism 20, the supply arm 30, the rotating shaft member 40, etc. provided in the case 10, and a motor assembly (not shown) provided at the bottom of the case 10. Wherein, inside the box 10 is a wafer processing chamber. The clamping mechanism 20 has a plurality of claws (not shown) to hold the wafer W and to drive the wafer W to vertically rotate within the housing 10 about a wafer rotation axis passing through the center of the wafer W and perpendicular to the surface of the wafer W. The supply arm 30 has two ends, one end being connected to the rotating shaft member 40 and the other end being a free end rotatable about the rotating shaft member 40. The supply arm 30 is further connected to the motor assembly such that the supply arm 30 is rotatable about the spindle member 40 under the drive of the motor assembly, thereby enabling the supply arm 30 to oscillate in a vertical plane parallel to the plane of the wafer W. Also, the supply arm 30 is provided with a spray mechanism (not shown) at a free end thereof, so that fluid can be supplied to the global surface of the rotating wafer W via the spray mechanism moving with the supply arm 30. The spindle member 40 is disposed perpendicularly to the wafer W.
As shown in fig. 1-8, the wafer vertical rotation processing apparatus 1 further includes a ventilation system 50 for forming dynamic air flow in the wafer processing chamber, the ventilation system 50 includes an air intake assembly 60 located on one side of the wafer processing chamber and an air exhaust assembly 70 located on the opposite side of the wafer processing chamber, the air intake assembly 60 includes an air intake panel 61 and an air intake cover 63, a plurality of through air inlets 62 are provided on the air intake panel 61, the air exhaust assembly 70 includes an air exhaust back plate 71 and an annular air exhaust cover 76, external air is introduced from an air intake pipe provided below the air intake cover 63 and introduced into the wafer processing chamber through the air inlets 62 of the air intake panel 61, and the air in the wafer processing chamber enters the annular air exhaust cover 76 from an air outlet 72 of the air exhaust back plate 71 to be collected and is led out through an air exhaust pipe below the bottom leading-out structure 77 of the annular air exhaust cover 76. In addition, the air intake assembly 60 includes an air intake panel 61 and an air intake shroud 63.
As shown in fig. 1, the housing 10 of the wafer vertical rotation processing apparatus 1 is composed of an air intake panel 61, an air exhaust back plate 71, and chamber walls. The housing 10 encloses a wafer processing chamber.
The ventilation system 50 in this embodiment is provided with the air inlet assembly 60 and the air outlet assembly 70 to ensure that the gas in the wafer processing chamber is continuously updated, the filtered clean gas enters the wafer processing chamber through the air inlet 62 of the air inlet panel 61, so as to accelerate the drying of the wafer, the gas in the chamber enters the annular exhaust hood 76 from the air outlet 72 of the exhaust back plate 71, and the gas collected by the annular exhaust hood 76 is directly led out through the exhaust pipeline arranged below the bottom leading-out structure 77 at the bottom of the annular exhaust hood.
As shown in fig. 1, 3, and 4, the air intake assembly 60 includes an air intake panel 61 and an air intake cover 63. The air inlet panel 61 is embedded in the front panel of the chamber, and the air inlet cover 63 covers the air inlet panel 61 and is fixed on the front panel of the chamber through screws. The air intake end of the air intake cover 63 faces in a vertically downward direction. The center axes of the circular structures of the air inlet cover 63 and the air inlet panel 61 are respectively overlapped with the rotation axis of the wafer.
Since the actual air intake of the different air inlets 62 is greatly affected by the air intake structure and the positions of the air inlets 62, the uneven air intake of the air inlets 62 will cause extremely uneven flow fields in the wafer processing chamber, especially near the wafer surface, and further affect the process effect. Accordingly, the present application optimizes the configuration and size of the intake vent 62.
As shown in fig. 3 and 4, the air inlets 62 of different areas on the air inlet panel 61 are distributed in a specific manner, and the air inlets 62 of different areas refer to the sectional areas of the first through holes 621. It should be understood that the air inlet is only an example, and the air inlet may have various distribution manners, and different air inlets are disposed on the air inlet panel.
As shown in fig. 5a and 5b, in one embodiment of the present application, the air inlet 62 of the air inlet panel 61 has a stepped hole shape including a first through hole 621 located at the air inlet side and a second through hole 622 located at the air outlet side, and the cross-sectional area of the first through hole 621 is different from the cross-sectional area of the second through hole 622 so as to adjust the flow rate of the air flowing through the air inlet 62.
As shown in fig. 5a and 5b, the air inlet 62 in this embodiment has a two-layer hole structure, including a first through hole 621 and a second through hole 622, where the first through hole 621 and the second through hole 622 are both cylindrical structures, and the two through holes are concentric, but have different inner diameters, i.e. different cross-sectional areas.
As shown in fig. 5a and 5b, the inner diameter of the first through hole 621 is denoted by d1, and the inner diameter of the second through hole 622 is denoted by d2. Generally, the cross-sectional area of the first through-hole 621 is smaller than the cross-sectional area of the second through-hole 622, i.e., the inner diameter d1 of the first through-hole 621 is smaller than the inner diameter d2 of the second through-hole 622. As shown in fig. 5a and 5b, the first through hole 621 of the inner diameter d1 is located on the gas inlet side, and the second through hole 622 of the inner diameter d2 is located on the gas outlet side.
The positions and the sizes of the air inlets 62 are set according to the air flow distribution condition in the air inlet cover 63, and the cross-sectional areas of the first through holes 621 of the air inlets 62 at different positions on the air inlet panel 61 are not completely identical so as to make the air flow of each air inlet 62 uniform, i.e. the inner diameters d1 of the first through holes of different air inlets 62 are set to be different.
By performing simulation experiments on the air flow distribution in the air inlet cover 63, it is found that the air flow distribution in the air inlet cover 63 is uneven, and an area with larger air inlet flow and an area with smaller air inlet flow exist. The air inlet 62 of the area with larger air inlet flow is provided with a smaller size in the inner diameter d1 of the first through hole; the air inlet 62 in the area with smaller intake air flow is provided with a larger first through hole inner diameter d1. With this arrangement, the flow rate of each air intake 62 can be regulated to be substantially uniform, and the first through hole 621 of the inner diameter d1 plays a role in flow rate regulation.
In addition, the cross-sectional areas of the second through holes 622 of the air inlets 62 are the same so that the air flow velocity of the air injected into the wafer processing chamber by each air inlet 62 is substantially uniform, that is, the second through hole inner diameter d2 of each air inlet 62 on the air inlet panel 61 has a uniform aperture, in other words, as shown in fig. 5a and 5b, the second through hole inner diameter d2 has the same size, and the first through hole inner diameter d1 has a variable size.
As shown in fig. 5a and 5b, the flow rate of the inlet air from the air inlet 62 at different positions can be adjusted to be uniform through the first through holes 621 with different sizes, but the flow rate of the air flowing out of the first through holes 621 is different due to the difference of the inner diameters d1 of the first through holes, and the second through holes 622 with uniform sizes are adopted to help the air flow to gradually transition into the substantially uniform flow rate in the second through holes 622, and then the air flow is ejected from the second through holes 622.
As shown in fig. 5a and 5b, the ratio of the length l2 of the second through hole 622 to the length l1 of the first through hole 621 is between 1 and 20, so as to achieve a better flow rate transition effect.
It can be seen that the first through hole 621 of the inner diameter d1 is used for adjusting the flow rate to be substantially uniform, but the difference of the flow rates of the discharged gases is also large, and the second through hole 622 of the inner diameter d2 is used for adjusting the flow rate to be substantially uniform.
The following describes how the different sized air intakes 62 are distributed.
As shown in fig. 3, 4 and 6, for convenience of explanation, the circular area where the air inlet 62 is located on the air inlet panel 61 is divided into a plurality of areas, which are described as including a central area, an annular area and an edge area, wherein the annular area is located between the central area and the edge area.
The first through hole 621 of the air inlet 62 at the center region of the air inlet panel 61 has a larger sectional area than the first through hole 621 of the air inlet 62 at the edge region. For example, in fig. 6, the first through-hole inner diameter d1 of the inner ring is larger than the first through-hole inner diameter d1 of the outer ring.
Specifically, the cross-sectional area of the first through holes 621 of the air inlet 62 located at the preset position of the annular region of the air inlet panel 61 is the maximum value among all the first through holes 621. For example, in fig. 6, the first through hole inner diameter d1 of the middle 7 region is the maximum value on the entire air intake panel 61.
Fig. 6 shows a specific application scenario, in which the circular area where the air inlets 62 are located on the air inlet panel 61 is divided into 24 areas in the radial direction and the circumferential direction, and values of different sizes are set for the first through hole inner diameters d1 of the air inlets 62 in different areas according to the simulated flow field distribution.
Preferably, the inner diameter d1 of the first through hole 621 is 0.1 to 30mm, the inner diameter d2 of the second through hole 622 is 0.1 to 30mm, and d1< =d2, the length l1 of the first through hole 621 is 0.1 to 20mm, and the length l2 of the second through hole 622 is 0.1 to 100mm, and l1< =l2. The ratio of l2 to l1 is in the range of 1 to 20.
In summary, the embodiment of the application adopts the stepped hole structure with two layers of holes, the first through holes 621 can make the air flow of each air inlet uniform, and the second through holes 622 can make the air flow speed of each air inlet basically uniform and then eject out, thereby effectively solving the problem of uneven air volume of each hole in the prior art and remarkably improving the air flow updating capability and the dry flow field environment in the process chamber.
As shown in fig. 7, the annular exhaust hood 76 includes an outer annular plate 761, an inner annular plate 762, and a cover plate 763 hermetically connected between the outer annular plate 761 and the inner annular plate 762, wherein the outer annular plate 761, the inner annular plate 762, and the cover plate 763 enclose an air guiding channel, the outer annular plate 761, the inner annular plate 762, and the cover plate 763 can be integrally formed, a bottom opening for hermetically connecting with a bottom extraction structure 77 is provided at the bottom of the outer annular plate 761, and the outer annular plate 761 and the inner annular plate 762 are connected with the exhaust back 71 through bolts.
Specifically, the outer end of the outer annular plate 761 and the inner end of the inner annular plate 762 are provided with mounting holes in the circumferential direction at positions close to the exhaust back plate 71, and are connected to the mounting holes at corresponding positions on the exhaust back plate 71 by screws. The annular exhaust hood 76 and the bottom extraction structure 77 are fixed by welding or screws.
The central axis of the annular exhaust hood 76 coincides with the wafer rotation axis, and the exhaust end of the annular exhaust hood 76 faces in a vertically downward direction. Preferably, the material of the annular hood 76 is aluminum alloy, stainless steel or engineering plastic.
As shown in fig. 8, the plurality of exhaust ports 72 of the exhaust back plate 71 are arranged in a ring shape corresponding to the positions of the ring-shaped exhaust hoods 76. The shape of the air outlet 72 is formed by intercepting the air outlet 72 in annular equal intervals, the number of the air outlets 72 is 4-90, the annular width is the width a of the air outlet 72, the width a of the air outlet 72 ranges from 1 mm to 100mm, the included angle theta 1 at two sides of the air outlet 72 ranges from 2 degrees to 88 degrees, and the interval angle theta 2 of the air outlet 72 ranges from 2 degrees to 28 degrees.
The inner annular width b of the annular hood 76 satisfies: a < b < a+100 (mm), where a is the width of the exhaust port 72 and b is the inner annular width of the annular hood 76. The annular hood 76 has an internal depth of 5 to 200mm.
As shown in fig. 1, in one embodiment of the present application, the air intake assembly 60 includes an air intake panel 61 and an air intake shroud 63.
As shown in fig. 1, the air intake panel 61 is embedded in the front panel of the chamber, and the air intake cover 63 covers the air intake panel 61 and is fixed to the front panel of the chamber by screws. The air intake end of the air intake cover 63 faces in a vertically downward direction. The central axes of the respective body annular structures of the air inlet cover 63 and the air inlet panel 61 are respectively coincident with the wafer rotation axis.
The drawings in the present specification are schematic views, which assist in explaining the concept of the present application, and schematically show the shapes of the respective parts and their interrelationships. It should be understood that for the purpose of clearly showing the structure of various parts of embodiments of the present application, the drawings are not drawn to the same scale and like reference numerals are used to designate like parts in the drawings.
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present application have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the application, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. The ventilation system is used for forming dynamic air flow in a wafer processing chamber, and comprises an air inlet component positioned on one surface of the wafer processing chamber and an air outlet component positioned on the other opposite surface of the wafer processing chamber, wherein the air inlet component comprises an air inlet panel and an air inlet cover, a plurality of through air inlets are arranged on the air inlet panel, the air outlet component comprises an air outlet backboard and an annular air outlet cover, external air is introduced from an air inlet pipeline arranged below the air inlet cover and is introduced into the wafer processing chamber through the air inlet of the air inlet panel, and the air in the wafer processing chamber enters the annular air outlet cover from the air outlet of the air outlet backboard to be collected and is led out from the air outlet pipeline below the annular air outlet cover through a bottom lead-out structure of the annular air outlet cover;
the air inlets with different areas on the air inlet panel are distributed in a specific mode, and are in a step hole shape, and comprise a first through hole positioned at the air inlet side and a second through hole positioned at the air outlet side, wherein the cross section area of the first through hole is different from that of the second through hole so as to regulate the flow of air flowing through the air inlets; the air inlet of the area with larger air inlet flow of the air inlet cover is provided with a smaller size in the inner diameter of the first through hole; the air inlet of the area with smaller air inlet flow of the air inlet cover is provided with a larger size in the inner diameter of the first through hole.
2. The vent system of claim 1, wherein the cross-sectional areas of the first through holes of the air inlets at different locations on the air inlet panel are not exactly the same so that the air flow rate of each air inlet is uniform, and the cross-sectional areas of the second through holes of each air inlet are all the same so that the air flow rate of each air inlet into the wafer processing chamber is substantially uniform.
3. The ventilation system of claim 1, wherein the cross-sectional area of the first through-hole of the air inlet located in the central region of the air inlet panel is greater than the cross-sectional area of the first through-hole of the air inlet located in the edge region.
4. The ventilation system of claim 1, wherein the cross-sectional area of the first through holes of the air inlet at a predetermined location of the annular region of the air inlet panel is the largest of all the first through holes, wherein the annular region is located between the central region and the edge region.
5. The vent system of claim 1, wherein a cross-sectional area of the first through-hole is smaller than a cross-sectional area of the second through-hole.
6. The vent system of claim 1, wherein the first through hole and the second through hole are each of a cylindrical configuration, the first through hole being concentric with the second through hole.
7. The ventilation system of claim 1, wherein a ratio of a length of the second through hole to a length of the first through hole is between 1 and 20.
8. The ventilation system of claim 1, wherein the first through hole has an inner diameter of 0.1 to 30mm and the second through hole has an inner diameter of 0.1 to 30mm.
9. The ventilation system of claim 1, wherein the first through hole has a length of 0.1 to 20mm and the second through hole has a length of 0.1 to 100mm.
10. A wafer vertical rotation processing apparatus, comprising: a clamping mechanism for rotating the wafer vertically and a supply arm for delivering a fluid; the supply arm is vertically swingable and supplies a fluid onto a wafer via a jetting mechanism provided at a free end thereof; a ventilation system as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110761694.0A CN113471123B (en) | 2021-07-06 | 2021-07-06 | Wafer vertical rotation processing equipment and ventilation system applied by same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110761694.0A CN113471123B (en) | 2021-07-06 | 2021-07-06 | Wafer vertical rotation processing equipment and ventilation system applied by same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113471123A CN113471123A (en) | 2021-10-01 |
| CN113471123B true CN113471123B (en) | 2023-08-25 |
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| CN202110761694.0A Active CN113471123B (en) | 2021-07-06 | 2021-07-06 | Wafer vertical rotation processing equipment and ventilation system applied by same |
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