CN102237246B - Exhaust plate and plasma processing equipment - Google Patents
Exhaust plate and plasma processing equipment Download PDFInfo
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- CN102237246B CN102237246B CN 201010159101 CN201010159101A CN102237246B CN 102237246 B CN102237246 B CN 102237246B CN 201010159101 CN201010159101 CN 201010159101 CN 201010159101 A CN201010159101 A CN 201010159101A CN 102237246 B CN102237246 B CN 102237246B
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Abstract
The invention provides an exhaust plate for plasma processing equipment. The exhaust plate can do rotary motion around the center of the exhaust plate. Besides, the invention also provides the plasma processing equipment, which comprises a reaction chamber and a lower electrode arranged in the reaction chamber; the exhaust plate provided with a plurality of exhaust channels is arranged in the reaction chamber and encircles the lower electrode; and the exhaust plate does rotary motion relative to the lower electrode. The exhaust plate and the plasma processing equipment which are provided by the invention can make air flow in the reaction chamber more uniform, and can prevent plasmas in a plasma area in the chamber from entering a non-plasma area to cause erosion and damage to relevant parts.
Description
Technical field
The present invention relates to the plasma treatment technique field, especially relate to the exhaustion plate for apparatus for processing plasma.In addition, the invention still further relates to a kind of apparatus for processing plasma with this exhaustion plate.
Background technology
Along with the high speed development of electronic technology, people are more and more higher to the integrated level requirement of integrated circuit, and the processing/disposal ability of semiconductor device constantly improves in this enterprise that will seek survival the product integrated circuit.At present, extensively adopt plasma treatment technique such as plasma etching technology etc. in the process of machining/processing of semiconductor device.So-called plasma technique refers to, process gas generation ionization under the exciting of radio-frequency power forms the plasma of the atom, molecule and the free radical isoreactivity particle that contain a large amount of electronics, ion, excitation state, these active particles and object to be processed are (for example, various physical and chemical reactions occur and also form volatile product in wafer) surface, thereby make the performance of machined object surface change.
Plasma technique relies on plasma processing device to realize.Usually, process gas enters into reaction chamber by the gas distributing device that is arranged on the plasma processing device reaction chamber, and is subject to exciting generation ionization and forming plasma of radio-frequency power at this.Plasma and processed material surface generation physical and chemical reaction, and form volatile reaction product.It is surperficial that this reaction product breaks away from processed material, and by vacuum system extraction chamber.
At present, the kind of plasma processing device is more, and is different according to operation principle, mainly comprises the process equipments such as RIE, MERIE, ICP, ECR.For example, Fig. 1 just shows the part-structure in a kind of plasma processing device that extensively adopts at present.
See also Fig. 1, plasma processing device generally comprises: reaction chamber 10, top electrode 12, bottom electrode 15, gas input system 11 and vacuum acquiring system 16 etc.
Be provided with bottom electrode 15 in reaction chamber 10, be provided with focusing ring 14 around bottom electrode 15, the processed semiconductor device such as wafer 17 are placed on bottom electrode 15.Wherein, the semiconductor device 17 such as bottom electrode 15 absorption and fixed wafer, focusing ring 14 at the wafer upper area, improves the plasma homogeneity to plasma focus.
Inwall around reaction chamber 10 is provided with reaction chamber liner 18, in order to prevent that processing product pollutes reaction chamber 10.Be fixed with exhaustion plate 13 below liner 18, have many apertures on it, for gas flow.
Position on the lower in reaction chamber 10 1 sides is provided with vacuum acquiring system 16, is used for above-mentioned reaction product extraction chamber 10.
The technical process of plasma processing device is generally: utilize vacuum acquiring system 16 that reaction chamber 10 is vacuumized; Then, the processing gas that technique is required is input in reaction chamber 10 by gas input system 11 and via gas distributing device; Then activated reactive gas, light and keep plasma, makes itself and processed wafer carry out the physical/chemical reaction, to obtain needed graphics processing.Simultaneously, reacted product through after exhaustion plate 13 by vacuum acquiring system 16 with its extraction chamber 10.Therefore, thereby the structure of exhaustion plate 13 can affect the uniformity that air suction mode affects plasma distribution in chamber, is those skilled in the art's problems to be solveds therefore how to improve plasma uniformity by the structure of improving exhaustion plate.
Summary of the invention
For addressing the above problem, the invention provides a kind of exhaustion plate, its air-flow that can improve in reaction chamber distributes, and makes the interior air-flow of chamber distribute more even.
In addition, the present invention also provides a kind of apparatus for processing plasma, and it can make the air-flow in logical reaction chamber comparatively even equally.
For this reason, the invention provides a kind of apparatus for processing plasma, it comprises reaction chamber and puts in the inner bottom electrode, around described bottom electrode, the exhaustion plate that has some exhaust passages on it is set in described reaction chamber, and described apparatus for processing plasma also comprises the whirligig connecting portion of the tubular that is the side closure, and described exhaustion plate rotates with respect to described bottom electrode under the drive of described whirligig connecting portion.
Wherein, described whirligig connecting portion is embedded between the cavity and bottom electrode of reaction chamber hermetically.
Wherein, described exhaustion plate can be one-body molded with the whirligig connecting portion; Described exhaustion plate also can removably link together with the whirligig connecting portion.
Wherein, described apparatus for processing plasma can be plasma etching equipment.
In addition, the present invention also provides a kind of exhaustion plate for apparatus for processing plasma, has the exhaust passage on it, and this exhaustion plate rotates around its center under the drive of the whirligig connecting portion of the tubular that is the side closure.
Wherein, described exhaustion plate can removably link together with the whirligig connecting portion; Described exhaustion plate also can be one-body molded with the whirligig connecting portion.
Wherein, described exhaust passage is that the aperture is 0.5mm～8mm steam vent, and for example the aperture of described steam vent is 1.6mm～6mm.
Wherein, the rotating speed of described whirligig connecting portion and exhaustion plate is 3～5r/min.
The present invention has following beneficial effect:
Because exhaustion plate provided by the invention can rotate around its center, therefore can make by the air-flow of this exhaustion plate roughly even in regional, thereby the air-flow that improves in reaction chamber distributes, and then makes the air-flow in whole reaction chamber distribute more even.Say further, even if in the situation that the steam vent on exhaustion plate is not absolute symmetry, the air-flow in regional is evenly distributed.
Similarly, owing to having adopted above-mentioned exhaustion plate provided by the invention in apparatus for processing plasma provided by the invention, thereby, it can make by the air-flow of this exhaustion plate comparatively even equally, thereby the interior air-flow of the reaction chamber that improves apparatus for processing plasma distributes, and then makes the air-flow in whole reaction chamber distribute more even.
Description of drawings
Fig. 1 is a kind of existing plasma processing device;
The vertical view of the exhaustion plate in the exhaustion plate that Fig. 2 provides for specific embodiment of the present invention;
The cutaway view of the exhaustion plate that Fig. 3 provides for specific embodiment of the present invention; And
The cutaway view of the apparatus for processing plasma that Fig. 4 provides for specific embodiment of the present invention.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, describe the present invention below in conjunction with accompanying drawing.
See also Fig. 2 and Fig. 3, wherein show the exhaustion plate 361 that specific embodiment of the present invention provides and the whirligig connecting portion 362 that is attached thereto.
Wherein, exhaustion plate 361 is circulus, and the bottom electrode in practical application just is looped around the central authorities of this circulus.Offer the some exhaust passages such as steam vent 363 on this exhaustion plate 361, these steam vents 363 are being circular perpendicular to the cross sectional shape on the plane of exhaustion plate center line.
Whirligig connecting portion 362 is the tubular structure of side closure, and its top is fastened on the bottom surface of exhaustion plate 361 by means of screw 35, the whirligig of its bottom connection such as motor etc.Like this, in plasma process/treatment process process, this whirligig connecting portion 362 rotates under the driving of whirligig and drives exhaustion plate 361 to be done at the uniform velocity or the speed change rotation along center line.Usually, the rotating speed of whirligig is lower, for example below 10r/min, often adopts at present 3-5r/min.Like this, adopt above-mentioned lower rotating speed both can prevent that plasma from entering into non-plasma zone by steam vent 363 and encroaching on workpiece in this zone, can make again gas in the plasma slab territory be discharged into non-plasma by steam vent 363 regional and discharge reaction chamber by means of vacuum acquiring system.And, because the whirligig connecting portion 362 in the present embodiment is the tubular structure of side closure, therefore, be equivalent to set up protective barrier one for bottom electrode during around bottom electrode when it, the plasma that can effectively prevent from entering in the non-plasma zone is encroached on bottom electrode.
In actual applications, this whirligig connecting portion 362 is around the bottom electrode setting, can increase the plasma that is in exhaustion plate 361 top plasma slabs and the collision of the non-bore region on exhaustion plate 361 by means of the rotation of exhaustion plate 361, thereby change the movement locus of this plasma, and then increase the plasma collision opportunity to each other in the plasma zone.and, rotation can also make originally in the time of can entering into plasma in exhaustion plate 361 non-plasma zones, below and move to exhaustion plate 361 surface along former movement locus by steam vent 363, due to steam vent 363 turn-off non-bore region on plasma and exhaustion plate 361 is bumped change former movement locus and again turn back to plasma slab, so just can effectively reduce plasma and enter into probability in exhaustion plate 361 non-plasma zones, below via steam vent 363, thereby the parts such as bottom electrode of avoiding better being positioned at exhaustion plate 361 non-plasma zones, below suffer the infringement of plasma.
And, with regard to the exhaustion plate 361 in the present invention, even if the steam vent on this exhaustion plate 361 is not absolute symmetry, also can rotate around bottom electrode because of this exhaustion plate 361, and make the air-flow in the regional of bottom electrode roughly even, and the regional exhaust capacity that can not have is strong, the relatively weak problem of regional exhaust capacity that has.
It is pointed out that in actual applications, the aperture of above-mentioned steam vent 363 can be arranged between 0.5～8mm, is for example 1.6mm～6mm.Further, under the prerequisite of guaranteeing smooth discharge gas, pass in order more effectively to prevent plasma, aperture that can steam vent 363 is set to 1.6mm～2.2mm.
Further it is to be noted, although the exhaustion plate in the present embodiment 361 and whirligig connecting portion 362 are two discrete parts, and by screw 35, exhaustion plate 361 is assembled to whirligig connecting portion 362 tops, but in actual applications, when exhaustion plate 361 and whirligig connecting portion 362 are discrete parts, both also can be by the mode such as grafting, clamping firmly and removably be connected and fixed.As for the rigging position between both, can be not limited to the such form in whirligig connecting portion 362 tops that exhaustion plate 361 is assembled to described in previous embodiment, but also can adopt other assembling forms, for example, exhaustion plate 361 is fixed on the place, upper position of whirligig connecting portion 362 sides.Further, in actual applications, exhaustion plate 361 and whirligig connecting portion 362 also can not adopt the form of aforementioned discrete parts, but also can be one-body molded, and adopt suitable assembling mode and bottom electrode be set in the hollow space of this integrated exhaustion plate central authorities.
Also it is to be noted, steam vent 363 on exhaustion plate 361 is being not limited to the circle described in previous embodiment perpendicular to the shape on the cross section of exhaustion plate 361 center lines, but also can adopt other shapes, such as ellipse, rectangle, strip, Long Circle, trapezoidal, rhombus and/or triangle etc.And in actual applications, the exhaust passage also can be not limited to the such form of aforementioned steam vent, such as also adopting the forms such as air discharge duct, exhaust gap.
In addition, the present invention also provides a kind of apparatus for processing plasma.Be provided with bottom electrode in the reaction chamber of this gas ions treatment facility, and be provided with above-mentioned exhaustion plate provided by the invention around bottom electrode.
Describe below in conjunction with Fig. 4 the apparatus for processing plasma that specific embodiment of the present invention provides in detail.
As shown in the figure; be provided with medium window 42 above the reaction chamber 40 of apparatus for processing plasma; inductance-coupled coil 41 just is placed on this medium window 42, is provided with cavity inner lining 43 in reaction chamber 40 inner loop around chamber wall 44, avoids the erosion of plasma in order to protect chamber wall 44.Position on the lower in reaction chamber 40 inside is provided with bottom electrode 47, be provided with exhaustion plate 461 provided by the invention around bottom electrode 47, reaction chamber 40 is stretched out to connect the whirligig (not shown) such as motor etc. in the lower end that connects the whirligig connecting portion 462 of exhaustion plate 461, and rotate around central shaft, thereby drive exhaustion plate 461 around bottom electrode 47 rotations under the drive of whirligig.
By means of this exhaustion plate 461, reaction chamber 40 is divided into plasma zone (it is positioned at the top of exhaustion plate 461) and non-plasma zone (it is positioned at the below of exhaustion plate 461).Like this, can increase plasma in plasma slab and the collision of the non-bore region on exhaustion plate 461 by means of the rotation of exhaustion plate 461, thereby change the movement locus of this plasma, and then increase the plasma collision probability to each other in the plasma zone.And, rotation can also make originally in the time of can entering into plasma in exhaustion plate 461 non-plasma zones, below and move to exhaustion plate 461 surface along former movement locus by steam vent 463, due to steam vent 463 turn-off non-bore region on plasma and exhaustion plate 461 is bumped change former movement locus and again turn back to plasma slab, so just can effectively reduce plasma and enter into probability in exhaustion plate 461 non-plasma zones, below via steam vent 463.
It is pointed out that in actual applications, bottom electrode can maintain static, and also can rotate with the whirligig connecting portion.And, stretch out the position of reaction chamber at the whirligig connecting portion, realize sealing by modes such as magnetic fluid or Lip Seal (lip-type seal) between the cavity of whirligig connecting portion and reaction chamber and between whirligig connecting portion and bottom electrode, thereby guaranteeing the process environments in reaction chamber.
Further it is to be noted, although the whirligig connecting portion described in previous embodiment is the tubular structure of side-closed, but in actual applications, the whirligig connecting portion also can adopt other forms, as long as it can connection rotary device and exhaustion plate and the actuating force of whirligig is delivered to exhaustion plate and drives the exhaustion plate rotation, for example, the whirligig connecting portion can be arranged to be connected to several root posts between whirligig and exhaustion plate.
26S Proteasome Structure and Function as for the exhaustion plate 461 that adopts in the present embodiment is similar to the front in conjunction with Fig. 2 and the described exhaustion plate of Fig. 3, does not repeat them here.
Be understandable that, above execution mode is only the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (11)
1. apparatus for processing plasma, comprise reaction chamber and put in the inner bottom electrode, around described bottom electrode, exhaustion plate is set in described reaction chamber, have some exhaust passages on described exhaustion plate, it is characterized in that, described apparatus for processing plasma also comprises the whirligig connecting portion of the tubular that is the side closure, and described exhaustion plate rotates with respect to described bottom electrode under the drive of described whirligig connecting portion.
2. apparatus for processing plasma according to claim 1, is characterized in that, described whirligig connecting portion is embedded between the cavity and bottom electrode of reaction chamber hermetically.
3. apparatus for processing plasma according to claim 1, is characterized in that, described exhaustion plate and whirligig connecting portion are one-body molded.
4. apparatus for processing plasma according to claim 1, is characterized in that, described exhaustion plate and whirligig connecting portion removably link together.
5. the described apparatus for processing plasma of any one according to claim 1-4, is characterized in that, described apparatus for processing plasma is plasma etching equipment.
6. an exhaustion plate that is used for apparatus for processing plasma, have the exhaust passage on it, it is characterized in that, this exhaustion plate rotates around its center under the drive of the whirligig connecting portion of the tubular that is the side closure.
7. exhaustion plate according to claim 6, is characterized in that, described exhaustion plate and whirligig connecting portion removably link together.
8. exhaustion plate according to claim 6, is characterized in that, described exhaustion plate and whirligig connecting portion are one-body molded.
9. exhaustion plate according to claim 6, is characterized in that, described exhaust passage is that the aperture is the steam vent of 0.5mm～8mm.
10. exhaustion plate according to claim 9, is characterized in that, the aperture of described steam vent is 1.6mm～6mm.
11. exhaustion plate according to claim 6 is characterized in that, the rotating speed of described whirligig connecting portion and exhaustion plate is 3～5r/min.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010159101 CN102237246B (en) | 2010-04-26 | 2010-04-26 | Exhaust plate and plasma processing equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010159101 CN102237246B (en) | 2010-04-26 | 2010-04-26 | Exhaust plate and plasma processing equipment |
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| CN102237246A CN102237246A (en) | 2011-11-09 |
| CN102237246B true CN102237246B (en) | 2013-06-05 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM503056U (en) * | 2014-07-24 | 2015-06-11 | Wen-Hsin Chiang | Bush unit using for plasma reaction device |
| CN105280469A (en) * | 2015-09-17 | 2016-01-27 | 武汉华星光电技术有限公司 | Etching reaction system for reducing damage of plasma at air exhaust openings |
| CN107623995B (en) * | 2017-08-24 | 2019-12-13 | 深圳崇达多层线路板有限公司 | Auxiliary vacuumizing device and vacuumizing method for improving glue removing uniformity |
| CN112447472B (en) * | 2019-08-27 | 2023-03-07 | 中微半导体设备(上海)股份有限公司 | Plasma reaction device for improving uniform distribution of gas |
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| US6531069B1 (en) * | 2000-06-22 | 2003-03-11 | International Business Machines Corporation | Reactive Ion Etching chamber design for flip chip interconnections |
| CN101452821A (en) * | 2007-12-07 | 2009-06-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma treatment apparatus and shield ring thereof |
| CN101541140A (en) * | 2008-03-17 | 2009-09-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma treatment equipment and shielding ring thereof |
| CN101660138A (en) * | 2008-08-29 | 2010-03-03 | 东京毅力科创株式会社 | Activated gas injector, film deposition apparatus, and film deposition method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4099092B2 (en) * | 2002-03-26 | 2008-06-11 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and high-speed rotary valve |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6531069B1 (en) * | 2000-06-22 | 2003-03-11 | International Business Machines Corporation | Reactive Ion Etching chamber design for flip chip interconnections |
| CN101452821A (en) * | 2007-12-07 | 2009-06-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma treatment apparatus and shield ring thereof |
| CN101541140A (en) * | 2008-03-17 | 2009-09-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma treatment equipment and shielding ring thereof |
| CN101660138A (en) * | 2008-08-29 | 2010-03-03 | 东京毅力科创株式会社 | Activated gas injector, film deposition apparatus, and film deposition method |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100015, M5 building, No. 1 Jiuxianqiao East Road, Beijing, Chaoyang District, two South Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |