CN113465369A - 一种全电脑化可控硅退火炉 - Google Patents
一种全电脑化可控硅退火炉 Download PDFInfo
- Publication number
- CN113465369A CN113465369A CN202110617265.6A CN202110617265A CN113465369A CN 113465369 A CN113465369 A CN 113465369A CN 202110617265 A CN202110617265 A CN 202110617265A CN 113465369 A CN113465369 A CN 113465369A
- Authority
- CN
- China
- Prior art keywords
- wall
- box
- top end
- feeding
- furnace body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000137 annealing Methods 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 16
- 239000010703 silicon Substances 0.000 title claims abstract description 16
- 238000007789 sealing Methods 0.000 claims abstract description 30
- 239000000428 dust Substances 0.000 claims abstract description 23
- 238000010521 absorption reaction Methods 0.000 claims description 18
- 239000002918 waste heat Substances 0.000 claims description 18
- 238000011084 recovery Methods 0.000 claims description 17
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 11
- 238000009434 installation Methods 0.000 claims description 6
- 239000003345 natural gas Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 description 7
- 238000002485 combustion reaction Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000010813 municipal solid waste Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
- F27B9/14—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment
- F27B9/20—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace
- F27B9/24—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace being carried by a conveyor
- F27B9/243—Endless-strand conveyor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
- F27B9/30—Details, accessories, or equipment peculiar to furnaces of these types
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
- F27B9/30—Details, accessories, or equipment peculiar to furnaces of these types
- F27B9/36—Arrangements of heating devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
- F27B9/30—Details, accessories, or equipment peculiar to furnaces of these types
- F27B9/40—Arrangements of controlling or monitoring devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D1/00—Casings; Linings; Walls; Roofs
- F27D1/18—Door frames; Doors, lids, removable covers
- F27D1/1858—Doors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D17/00—Arrangements for using waste heat; Arrangements for using, or disposing of, waste gases
- F27D17/004—Systems for reclaiming waste heat
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D17/00—Arrangements for using waste heat; Arrangements for using, or disposing of, waste gases
- F27D17/008—Arrangements for using waste heat; Arrangements for using, or disposing of, waste gases cleaning gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27M—INDEXING SCHEME RELATING TO ASPECTS OF THE CHARGES OR FURNACES, KILNS, OVENS OR RETORTS
- F27M2003/00—Type of treatment of the charge
- F27M2003/01—Annealing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Tunnel Furnaces (AREA)
Abstract
本发明公开了一种全电脑化可控硅退火炉,包括底座和炉体;所述的底座的顶端安装有进料密封箱,且进料密封箱的表面螺钉连接有微型电脑;所述的进料密封箱的内壁安装有进料带,且进料密封箱的顶端螺钉连接有支撑架;所述的支撑架的顶端两侧均安装有滚轮,所述的底座的内壁设置有多组吸尘风扇,所述的安装框的内壁两侧均开设有滑槽,本发明,通过设置有进料密封箱、滚轮、连接绳、安装块和电动推杆,这样便于在有物料进行上料时,通过电动推杆伸缩以带动安装块和连接绳进行伸缩,以带动箱门进行开合,进行插板密封法,可以有效的保证炉体内的压力与热量不流失,以达到炉体内的温度与压力符合工艺标准。
Description
技术领域
本发明涉及退火炉相关技术领域,具体为一种全电脑化可控硅退火炉。
背景技术
退火炉是在半导体器件制造中使用的一种工艺,其包括加热多个半导体晶片以影响其电性能,热处理是针对不同的效果而设计的,可以加热晶片以激活掺杂剂,将薄膜转换成薄膜或将薄膜转换成晶片衬底界面,使致密沉积的薄膜,改变生长的薄膜的状态,修复注入的损伤,移动掺杂剂或将掺杂剂从一个薄膜转移到另一个薄膜或从薄膜进入晶圆衬底,故此我们提供一种全电脑化可控硅退火炉。
而目前使用的退火炉,在进行物料送料时,很容易引起炉体内的压力和热量损失,导致生产的产品由于工艺要求不达标导致报废,另外在炉体对产品进行加热时,产生的热量不便于进行回收,造成资源浪费,同时炉体内高温加热时会产生很多燃烧垃圾,不便于进行清理的问题。
发明内容
本发明的目的在于提供一种全电脑化可控硅退火炉,以解决上述背景技术中提出的问题。
为实现上述目的,本发明提供如下技术方案:
一种全电脑化可控硅退火炉,包括底座和炉体;所述的底座的顶端安装有进料密封箱,且进料密封箱的表面螺钉连接有微型电脑;所述的进料密封箱的内壁安装有进料带,且进料密封箱的顶端螺钉连接有支撑架;所述的支撑架的顶端两侧均安装有滚轮,且滚轮的内壁安装有连接绳;所述的连接绳的一段连接有安装块,且安装块的底端螺钉连接有电动推杆;所述的电动推杆焊接在进料密封箱的顶端;所述的连接绳的另一端螺钉连接有箱门,且箱门的底端设置有密封块;所述的密封块安装在进料密封箱的外壁,且密封块的内壁开设有卡槽;所述的底座的内壁设置有多组吸尘风扇,且底座的底端焊接有安装框;所述的安装框的内壁两侧均开设有滑槽,且滑槽的内壁安装有滑块;所述的滑块的外壁焊接有集尘盒;所述的炉体安装在底座的顶端。
优选的,所述的炉体的内壁底端设置有输送带,且炉体的外壁两侧均安装有点火装置;所述的点火装置与炉体的中轴线位置为轴对称设置,且点火装置通过喷火嘴贯穿炉体内壁设置有多组;所述的点火装置的外壁连接有引流管,且引流管的顶端连接有天然气管道;所述的炉体的顶端设置有多组吸热管。
优选的,所述的吸热管的内壁螺钉连接有吸热风扇,且吸热管的顶端连接有热气输送管;所述的热气输送管的另一端连接有余热回收箱,且余热回收箱的外壁贴合有保温套。
优选的,所述的安装块通过电动推杆与进料密封箱构成伸缩结构,且电动推杆与进料密封箱为垂直设置。
优选的,所述的集尘盒通过滑块与安装框滑动连接,且滑块以集尘盒的中轴线为轴对称设置。
优选的,所述的保温套的内壁与余热回收箱的外壁紧密贴合,且保温套的内壁尺寸与余热回收箱的外壁尺寸吻合。
与现有技术相比,本发明的有益效果是:
1、本发明,通过设置有进料密封箱、滚轮、连接绳、安装块和电动推杆,这样便于在有物料进行上料时,通过电动推杆伸缩以带动安装块和连接绳进行伸缩,以带动箱门进行开合,进行插板密封法,可以有效的保证炉体内的压力与热量不流失,以达到炉体内的温度与压力符合工艺标准。
2、本发明,通过设置有吸尘风扇、安装框、滑槽、滑块和集尘盒,这样便于在炉体内通过点火装置对喷火嘴产生火焰对物料进行烧制时,会产生大量的粉尘和燃烧垃圾,燃烧垃圾长时间存留在炉体内部时,会影响生产效率,变的难以清洁,可以在生产完成时,通过打开吸尘风扇将炉体内部的燃烧垃圾吸入集尘盒中,通过滑块将集尘盒抽出,便于集中处理。
3、本发明,通过设置有吸热管、吸热风扇、热气输送管、余热回收箱和保温套,这样便于将炉体内部高温燃烧造成的热气通过吸热管中的吸热风扇进行抽取,通过热气输送管输送到余热回收箱进行储存,以便于将余热充分利用到其他设备,保温套可以保证余热回收箱中的热量不流失,以将能源充分的回收利用。
附图说明
图1为本发明一种全电脑化可控硅退火炉的正视剖视结构示意图;
图2为本发明一种全电脑化可控硅退火炉的炉体俯视剖视结构示意图;
图3为本发明一种全电脑化可控硅退火炉的支撑架与连接绳正视结构示意图;
图4为本发明一种全电脑化可控硅退火炉的进料密封箱侧视结构示意图;
图5为本发明一种全电脑化可控硅退火炉的图1中A部放大结构示意图。
图中:1、底座;2、进料密封箱;3、微型电脑;4、进料带;5、支撑架;6、滚轮;7、连接绳;8、安装块;9、电动推杆;10、箱门;11、密封块;12、卡槽;13、吸尘风扇;14、安装框;15、滑槽;16、滑块;17、集尘盒;18、炉体;19、输送带;20、点火装置;21、喷火嘴;22、引流管;23、天然气管道;24、吸热管;25、吸热风扇;26、热气输送管;27、余热回收箱;28、保温套。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
请参阅图1-5,本发明提供一种技术方案:一种全电脑化可控硅退火炉,包括底座1和炉体18;所述的底座1的顶端安装有进料密封箱2,且进料密封箱2的表面螺钉连接有微型电脑3;所述的进料密封箱2的内壁安装有进料带4,且进料密封箱2的顶端螺钉连接有支撑架5;所述的支撑架5的顶端两侧均安装有滚轮6,且滚轮6的内壁安装有连接绳7;所述的连接绳7的一段连接有安装块8,且安装块8的底端螺钉连接有电动推杆9;所述的电动推杆9焊接在进料密封箱2的顶端;所述的连接绳7的另一端螺钉连接有箱门10,且箱门10的底端设置有密封块11;所述的密封块11安装在进料密封箱2的外壁,且密封块11的内壁开设有卡槽12;所述的底座1的内壁设置有多组吸尘风扇13,且底座1的底端焊接有安装框14;所述的安装框14的内壁两侧均开设有滑槽15,且滑槽15的内壁安装有滑块16;所述的滑块16的外壁焊接有集尘盒17;所述的炉体18安装在底座1的顶端。
所述的炉体18的内壁底端设置有输送带19,且炉体18的外壁两侧均安装有点火装置20;所述的点火装置20与炉体18的中轴线位置为轴对称设置,且点火装置20通过喷火嘴21贯穿炉体18内壁设置有多组;所述的点火装置20的外壁连接有引流管22,且引流管22的顶端连接有天然气管道23;所述的炉体18的顶端设置有多组吸热管24。
所述的吸热管24的内壁螺钉连接有吸热风扇25,且吸热管24的顶端连接有热气输送管26;所述的热气输送管26的另一端连接有余热回收箱27,且余热回收箱27的外壁贴合有保温套28。
所述的安装块8通过电动推杆9与进料密封箱2构成伸缩结构,且电动推杆9与进料密封箱2为垂直设置。
所述的集尘盒17通过滑块16与安装框14滑动连接,且滑块16以集尘盒17的中轴线为轴对称设置。
所述的保温套28的内壁与余热回收箱27的外壁紧密贴合,且保温套28的内壁尺寸与余热回收箱27的外壁尺寸吻合。
需要说明的是,本发明为一种全电脑化可控硅退火炉,使用的时候,首先使用微型电脑3设置好生产参数,通过电动推杆9伸缩以带动安装块8与连接绳7,以带动箱门10进行开合,将物料送入进料密封箱2内壁的进料带4中,然后将箱门10放下,箱门10***密封块11中的卡槽12内,以将内部进行密封,物料通过进料带4输送至炉体18内部,通过输送带19进行运输运输,运输过程中,点火装置20通过引流管22将天然气管道23中的天然气吸入喷火嘴21中产生火焰,火焰将输送带19上的物料进行烘烤,烘烤后的物料通过输送带19流出,产生的热量通过吸热管24中的吸热风扇25将热量通过热气输送管26输入余热回收箱27中进行存放,在生产完成后,通过吸尘风扇13将燃烧后产生的燃烧垃圾吸入集尘盒17中,以便于后续集中处理。
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同物限定。
Claims (6)
1.一种全电脑化可控硅退火炉,其特征在于:包括底座(1)和炉体(18);所述的底座(1)的顶端安装有进料密封箱(2),且进料密封箱(2)的表面螺钉连接有微型电脑(3);所述的进料密封箱(2)的内壁安装有进料带(4),且进料密封箱(2)的顶端螺钉连接有支撑架(5);所述的支撑架(5)的顶端两侧均安装有滚轮(6),且滚轮(6)的内壁安装有连接绳(7);所述的连接绳(7)的一段连接有安装块(8),且安装块(8)的底端螺钉连接有电动推杆(9);所述的电动推杆(9)焊接在进料密封箱(2)的顶端;所述的连接绳(7)的另一端螺钉连接有箱门(10),且箱门(10)的底端设置有密封块(11);所述的密封块(11)安装在进料密封箱(2)的外壁,且密封块(11)的内壁开设有卡槽(12);所述的底座(1)的内壁设置有多组吸尘风扇(13),且底座(1)的底端焊接有安装框(14);所述的安装框(14)的内壁两侧均开设有滑槽(15),且滑槽(15)的内壁安装有滑块(16);所述的滑块(16)的外壁焊接有集尘盒(17);所述的炉体(18)安装在底座(1)的顶端。
2.根据权利要求1所述的一种全电脑化可控硅退火炉,其特征在于:所述的炉体(18)的内壁底端设置有输送带(19),且炉体(18)的外壁两侧均安装有点火装置(20);所述的点火装置(20)与炉体(18)的中轴线位置为轴对称设置,且点火装置(20)通过喷火嘴(21)贯穿炉体(18)内壁设置有多组;所述的点火装置(20)的外壁连接有引流管(22),且引流管(22)的顶端连接有天然气管道(23);所述的炉体(18)的顶端设置有多组吸热管(24)。
3.根据权利要求2所述的一种全电脑化可控硅退火炉,其特征在于:所述的吸热管(24)的内壁螺钉连接有吸热风扇(25),且吸热管(24)的顶端连接有热气输送管(26);所述的热气输送管(26)的另一端连接有余热回收箱(27),且余热回收箱(27)的外壁贴合有保温套(28)。
4.根据权利要求1所述的一种全电脑化可控硅退火炉,其特征在于:所述的安装块(8)通过电动推杆(9)与进料密封箱(2)构成伸缩结构,且电动推杆(9)与进料密封箱(2)为垂直设置。
5.根据权利要求1所述的一种全电脑化可控硅退火炉,其特征在于:所述的集尘盒(17)通过滑块(16)与安装框(14)滑动连接,且滑块(16)以集尘盒(17)的中轴线为轴对称设置。
6.根据权利要求3所述的一种全电脑化可控硅退火炉,其特征在于:所述的保温套(28)的内壁与余热回收箱(27)的外壁紧密贴合,且保温套(28)的内壁尺寸与余热回收箱(27)的外壁尺寸吻合。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110617265.6A CN113465369A (zh) | 2021-06-03 | 2021-06-03 | 一种全电脑化可控硅退火炉 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110617265.6A CN113465369A (zh) | 2021-06-03 | 2021-06-03 | 一种全电脑化可控硅退火炉 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN113465369A true CN113465369A (zh) | 2021-10-01 |
Family
ID=77872124
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110617265.6A Withdrawn CN113465369A (zh) | 2021-06-03 | 2021-06-03 | 一种全电脑化可控硅退火炉 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113465369A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113865338A (zh) * | 2021-10-29 | 2021-12-31 | 浙江孚菱机械有限公司 | 一种网带式烧结炉 |
-
2021
- 2021-06-03 CN CN202110617265.6A patent/CN113465369A/zh not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113865338A (zh) * | 2021-10-29 | 2021-12-31 | 浙江孚菱机械有限公司 | 一种网带式烧结炉 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107747862A (zh) | 一种陶瓷制品烘干窑 | |
CN113465369A (zh) | 一种全电脑化可控硅退火炉 | |
CN205217499U (zh) | 一种铜块清洗装置 | |
CN207622447U (zh) | 硅片烘干炉 | |
CN104567044B (zh) | 太阳能真空集热管烘烤排气装置 | |
CN115289840A (zh) | 一种全电脑化可控硅退火炉 | |
CN201672794U (zh) | 一种隧道炉 | |
CN207009480U (zh) | 一种钙钛矿薄膜后处理设备 | |
CN202076222U (zh) | 烤管机的送料装置 | |
CN101839635A (zh) | 一种隧道炉 | |
CN104864691A (zh) | 一种微波干燥电焊条的方法 | |
CN102080149B (zh) | 一种节能型全自动可控气氛卧式盘圆节能退火生产线 | |
CN211946786U (zh) | 一种曲面玻璃热弯设备 | |
CN210620871U (zh) | 一种连续式节能环保型热处理装置 | |
CN204276409U (zh) | 清洗烘干机 | |
CN210140529U (zh) | 一种煤气加热玻璃制品退火炉 | |
CN106048183A (zh) | 一种生物质电双能源热处理炉 | |
CN110922035A (zh) | 一种曲面玻璃热弯设备 | |
CN206820011U (zh) | 太阳能电池板生产用石墨舟冷却*** | |
CN111138077A (zh) | 一种教学科研用小型水平辊道式玻璃钢化炉 | |
CN219567789U (zh) | 一种用于石英玻璃管成形工艺的加热炉 | |
CN214537431U (zh) | 具有底置运风结构的节能烤炉 | |
CN219607743U (zh) | 一种利用退火余热升温降低设备能耗装置 | |
CN217110416U (zh) | 一种保温型电加热辊道炉 | |
CN214537432U (zh) | 具有排气装置的节能烤炉 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WW01 | Invention patent application withdrawn after publication | ||
WW01 | Invention patent application withdrawn after publication |
Application publication date: 20211001 |