CN113459244A - Intelligent preparation process of TZO semiconductor material for glass - Google Patents
Intelligent preparation process of TZO semiconductor material for glass Download PDFInfo
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- CN113459244A CN113459244A CN202110787045.8A CN202110787045A CN113459244A CN 113459244 A CN113459244 A CN 113459244A CN 202110787045 A CN202110787045 A CN 202110787045A CN 113459244 A CN113459244 A CN 113459244A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
- B28B1/00—Producing shaped prefabricated articles from the material
- B28B1/24—Producing shaped prefabricated articles from the material by injection moulding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
- B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
- B02C17/00—Disintegrating by tumbling mills, i.e. mills having a container charged with the material to be disintegrated with or without special disintegrating members such as pebbles or balls
- B02C17/10—Disintegrating by tumbling mills, i.e. mills having a container charged with the material to be disintegrated with or without special disintegrating members such as pebbles or balls with one or a few disintegrating members arranged in the container
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
- B28B11/00—Apparatus or processes for treating or working the shaped or preshaped articles
- B28B11/24—Apparatus or processes for treating or working the shaped or preshaped articles for curing, setting or hardening
- B28B11/243—Setting, e.g. drying, dehydrating or firing ceramic articles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28C—PREPARING CLAY; PRODUCING MIXTURES CONTAINING CLAY OR CEMENTITIOUS MATERIAL, e.g. PLASTER
- B28C3/00—Apparatus or methods for mixing clay with other substances
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Mixers Of The Rotary Stirring Type (AREA)
Abstract
The invention provides an intelligent preparation process of a TZO semiconductor material for glass, which uses an intelligent preparation device of the TZO semiconductor material for glass, and comprises the following steps: 1) preparing a mixed solution of water and polyvinyl alcohol; 2) placing the mixed solution into an intelligent preparation device of the TZO semiconductor material for glass, and mixing with ZnO and SnO2Preparing the powder mixture into slurry; 3) ball milling, adding a polymerization catalyst and a polymerization initiator, and stirring and mixing; 4) placing the stirred material in a mold for sintering, and obtaining a TZO semiconductor material after the temperature is reduced to room temperature; the intelligent preparation device of the TZO semiconductor material for glass can ensureEvidence of ZnO and SnO2The powder mixture and the mixed solution are fully reacted, the quality of the produced slurry is ensured, the structure is simple, and the practicability is high.
Description
Technical Field
The invention relates to the technical field of TZO semiconductor material preparation, in particular to an intelligent preparation process of a TZO semiconductor material for glass.
Background
The use of energy-saving glass is an important aspect of building energy saving, and as modern buildings increasingly use larger windows or glass curtain walls, it becomes more and more important to reduce the heat loss of buildings through doors and windows. At present, the utilization rate and use ratio of energy-saving glass in ChinaDeveloped countries have a great gap, China is a main energy consumer country, and how to make China realize new buildings to achieve the energy-saving goal according to plan requirements faces a great challenge, wherein for achieving the goal, the energy-saving glass has great application potential, and the existing TZO semiconductor material for glass needs to be added with ZnO and SnO in the preparation process2In the prior art, the slurry is added at one time and then stirred and mixed, so that the condition of insufficient stirring is easy to occur, and the quality of the slurry prepared by stirring is influenced.
Therefore, it is necessary to provide a new intelligent manufacturing process of the TZO semiconductor material for glass to solve the above technical problems.
Disclosure of Invention
In order to solve the technical problems, the invention provides an intelligent preparation process of the TZO semiconductor material for glass.
The intelligent preparation process of the TZO semiconductor material for glass provided by the invention comprises the following steps: an intelligent preparation process of a TZO semiconductor material for glass, which uses an intelligent preparation device of the TZO semiconductor material for glass, and comprises the following steps:
1) mixing a mixed solution of water and polyvinyl alcohol and a polymerization monomer in a stirring container, and adding a dispersing agent while mixing to obtain a mixed solution;
2) placing the mixed solution into an intelligent preparation device of the TZO semiconductor material for glass, and gradually adding ZnO and SnO into the mixed solution2The powder mixture is stirred while adding to ensure that ZnO and SnO2The powder mixture can fully react with the mixed solution for 40 minutes to prepare slurry;
3) the prepared slurry is fed from an intelligent preparation device of the TZO semiconductor material for glass, enters a ball milling mechanism for ball milling, is placed in a vacuum stirrer after ball milling, is added with a polymerization catalyst and a polymerization initiator, is stirred and mixed for 65 minutes and is at the temperature of 40 ℃;
4) placing the stirred material in a mold, performing injection molding to prepare a biscuit, drying the biscuit in air at 100 ℃, sintering the biscuit in an environment of 1400 ℃ for 4 hours, cooling the biscuit to room temperature, and reprocessing to obtain a TZO semiconductor material;
wherein the intelligent preparation facilities of TZO semiconductor material for glass in step 2) includes the box, the case lid is installed in the top cooperation of box, feed inlet and discharge gate have been seted up on the surface of box, the upper surface center department fixedly connected with rabbling mechanism of case lid, the inner wall fixedly connected with adjusting device of box, adjusting device and rabbling mechanism fixed connection, the inside of box is equipped with transmission, transmission and adjusting device fixed connection, the lower fixed surface of case lid is connected with the storage case, the storage case rotates the installation with adjusting device, the storage case rotates the installation with transmission, the fixed surface of storage case is connected with the connecting pipe, the connecting pipe is linked together with the inner chamber of storage case, the feed opening has been seted up to the bottom of storage case.
In some embodiments of the invention, the polymerized monomer is a methacrylamide monomer and N-N' -dimethyl bisacrylamide in a weight ratio of 10: 1, the weight ratio of the ZnO to the SnO2 is 10: 6, the polymerization catalyst is tetramethylethylenediamine, the polymerization initiator is ammonium persulfate, and the dispersant is sodium tripolyphosphate
Preferably, the composition comprises the following components in parts by weight: 100 parts of deionized water, 10 parts of polyvinyl alcohol, 10 parts of methacrylamide monomer, 1 part of N-N' -dimethyl bisacrylamide, 0.1 part of polymerization catalyst, 0.02 part of polymerization initiator and 0.5 part of dispersant.
Preferably, rabbling mechanism includes motor case, servo motor, upstand, first gear, second gear, stirring post, puddler and cross, the fixedly connected with motor case is located at the upper surface center of case lid, the internally mounted of motor case has servo motor, servo motor's output fixedly connected with upstand, the first gear of servo motor's one end fixedly connected with is kept away from to the upstand, the outside symmetry meshing of first gear is connected with the second gear, box inner wall fixedly connected with cross, first gear rotates the installation with the cross, two the second gear rotates the installation with the cross, the fixed surface of second gear is connected with the stirring post, the equidistance fixedly connected with puddler in the outside of stirring post.
Preferably, the surface of the cross plate is fixedly connected with an arc plate, the first gear is rotatably mounted with the arc plate, the second gears are rotatably mounted with the arc plate, and the stirring columns are rotatably connected with the arc plate.
Preferably, the lower surface of the box cover is symmetrically and fixedly connected with L-shaped plates, and the two L-shaped plates are fixedly connected with the storage box.
Preferably, the adjusting device comprises a rotary disc, a first rack, a connecting column, a third gear, a fourth gear, a semicircular plate, a first arc-shaped groove, a second rack, a spring, a limiting block, a first arc-shaped column and a second arc-shaped column, wherein the semicircular plate is fixedly connected to the inner wall of the box body below the box cover, the first arc-shaped groove is formed in the surface of the semicircular plate, the first arc-shaped column is fixedly connected to the surface of the first arc-shaped groove, the limiting block is fixedly connected to one end of the surface of the arc-shaped column, the spring is fixedly connected to the surface of the limiting block, the second arc-shaped column is slidably mounted at one end of the surface of the first arc-shaped groove, the second arc-shaped groove is formed in the end face of the second arc-shaped column, one end of the spring, which is far away from the limiting block, is fixedly connected to the bottom of the second arc-shaped groove, the surface of the second arc-shaped column is fixedly connected to the first rack, the one end meshing on first rack surface is connected with the third gear, the last one end fixedly connected with fourth gear that is kept away from the third gear through one-way bearing rotation is connected with the spliced pole on the third gear, the outside meshing of fourth gear is connected with the second rack, the top of storage case is rotated and is installed the carousel, carousel and second rack fixed connection, carousel and upstand fixed connection, the carousel rotates the installation with the case lid.
Preferably, the surface of the semicircular plate is fixedly connected with a square plate, and the third gear and the square plate are rotatably mounted.
Preferably, the transmission device comprises a first rotating column, a mounting block, a first bevel gear, a second rotating column, a convex block, a transverse column, a spiral groove, a fixing block, a connecting rod, a fixing rod and a cover plate, wherein the square plate is rotatably connected with the first rotating column, one end of the first rotating column, which is close to the semicircular plate, is fixedly connected with a third gear, one end of the first rotating column, which is far away from the third gear, is fixedly connected with the first bevel gear, the outer side of the first bevel gear is connected with the second bevel gear in a meshing manner, the surface of the second bevel gear is fixedly connected with the second rotating column, one end of the second rotating column, which is far away from the second bevel gear, is fixedly connected with the convex block, the surface of the second rotating column is rotatably connected with the transverse column, the spiral groove is formed in the surface of the transverse column, the convex block is installed in a matching manner with the spiral groove, and the end surface of the transverse column, which is far away from the second bevel gear, is symmetrically and fixedly connected with the fixing block, the below of storage case is provided with the connecting rod, and the connecting rod has two, the one end and the fixed block of connecting rod rotate the installation, the surface symmetry of feed opening rotates installs the apron, the fixed surface of apron connects the dead lever, the dead lever is kept away from the one end rotation of fixed block with the connecting rod and is connected, the inner wall of box is located the below fixedly connected with installation piece of semicircle board, first bevel gear and second bevel gear all rotate the installation with the installation piece.
Preferably, the internally mounted of feed inlet has first feed valve, the internally mounted of discharge gate has the bleeder valve, the internally mounted of connecting pipe has the second feed valve.
Compared with the related technology, the intelligent preparation process of the TZO semiconductor material for glass provided by the invention has the following beneficial effects:
the invention provides a box cover, wherein a controller can be arranged on the upper surface of the box cover, a servo motor, a first feeding valve, a second feeding valve and a discharging valve are all connected with the controller through leads, the controller is precisely controlled by a computer program and is controlled by the controller, the servo motor drives a vertical post to rotate, the vertical post is fixedly connected with a rotary table, the rotary table rotates along with the rotation of the vertical post, and then drives a second rack to rotate, and further drives a fourth gear to rotateThe connecting column drives the third gear to rotate and further drives the first rotating column to rotate, the first bevel gear and the second bevel gear drive the second rotating column to rotate and further drive the cross column to be close to the feed opening, the two cover plates are driven to move in opposite directions by the transmission of the two connecting rods, the feed opening is opened, and ZnO and SnO are added while2On one side, stir, third gear revolve drives first rack and second arc post and slides along first arc wall, the spring is compressed, when second rack and fourth gear no longer mesh, second arc post and first rack resume to initial position under the spring force effect, third gear rotates the same angle towards opposite direction, the spreader can reset promptly, two apron are in closed condition here, accomplish a feeding, stir in the feeding, compare in current technique, can guarantee to react fully in the same time, and then guarantee the quality of the thick liquids of making.
Drawings
FIG. 1 is a flow chart of the preparation of the TZO semiconductor material for glass provided by the invention;
FIG. 2 is a schematic view of the overall structure provided by the present invention;
FIG. 3 is a schematic view of an internal structure of the case according to the present invention;
FIG. 4 is a schematic structural diagram of a stirring mechanism provided in the present invention;
FIG. 5 is a schematic view of a structure of the second rack and the fourth gear according to the present invention;
FIG. 6 is a second schematic view of the internal structure of the case according to the present invention;
FIG. 7 is a schematic view of a transmission configuration provided by the present invention;
fig. 8 is a schematic structural diagram of an adjusting device provided by the present invention.
Reference numbers in the figures: 1. a box body; 2. a box cover; 3. a feed inlet; 4. a discharge port; 5. an adjustment device; 6. a stirring mechanism; 7. a transmission device; 8. a material storage box; 9. a connecting pipe; 10. a feeding port; 11. a motor case; 12. a servo motor; 13. a vertical post; 14. a first gear; 15. a second gear; 16. a stirring column; 17. a stirring rod; 18. a cross plate; 19. an arc-shaped plate; 20. an L-shaped plate; 21. a turntable; 22. a first rack; 23. connecting columns; 24. a third gear; 25. a fourth gear; 26. a semicircular plate; 27. a first arc-shaped slot; 28. a second arc-shaped slot; 29. a second rack; 30. a spring; 31. a limiting block; 32. a first arc-shaped column; 33. a square plate; 34. a first rotating column; 35. mounting blocks; 36. a first bevel gear; 37. a second bevel gear; 38. a second rotating cylinder; 39. a bump; 40. a cross post; 41. a helical groove; 42. a fixed block; 43. a connecting rod; 44. fixing the rod; 45. a cover plate; 46. a first feed valve; 47. a discharge valve; 48. a second feed valve; 49. a second arc-shaped column.
Detailed Description
The invention is further described with reference to the following figures and embodiments.
Referring to fig. 1, fig. 2, fig. 3, fig. 4, fig. 5, fig. 6, fig. 7 and fig. 8 in combination, wherein fig. 1 is a flow chart of a process for preparing a TZO semiconductor material for glass according to the present invention; FIG. 2 is a schematic view of the overall structure provided by the present invention; FIG. 3 is a schematic view of an internal structure of the case according to the present invention; FIG. 4 is a schematic structural diagram of a stirring mechanism provided in the present invention; FIG. 5 is a schematic view of a structure of the second rack and the fourth gear according to the present invention; FIG. 6 is a second schematic view of the internal structure of the case according to the present invention; FIG. 7 is a schematic view of a transmission configuration provided by the present invention; fig. 8 is a schematic structural diagram of an adjusting device provided by the present invention.
In the implementation process, as shown in fig. 2, 3 and 4, the intelligent preparation process of the TZO semiconductor material for glass uses an intelligent preparation device of the TZO semiconductor material for glass, and comprises the following steps:
1) mixing a mixed solution of water and polyvinyl alcohol and a polymerization monomer in a stirring container, and adding a dispersing agent while mixing to obtain a mixed solution;
2) placing the mixed solution into an intelligent preparation device of the TZO semiconductor material for glass, and gradually adding ZnO and SnO into the mixed solution2The powder mixture of (3) is stirred while being added,ensuring ZnO and SnO2The powder mixture can fully react with the mixed solution for 40 minutes to prepare slurry;
3) the prepared slurry is fed from an intelligent preparation device of the TZO semiconductor material for glass, enters a ball milling mechanism for ball milling, is placed in a vacuum stirrer after ball milling, is added with a polymerization catalyst and a polymerization initiator, is stirred and mixed for 65 minutes and is at the temperature of 40 ℃; the size D50 after ball milling reaches 0.1-0.4 μm;
4) placing the stirred material in a mold, performing injection molding to prepare a biscuit, drying the biscuit in air at 100 ℃, sintering the biscuit in an environment of 1400 ℃ for 4 hours, cooling the biscuit to room temperature, and reprocessing to obtain a TZO semiconductor material;
in some embodiments of the invention, the polymerized monomer is a methacrylamide monomer and N-N' -dimethyl bisacrylamide in a weight ratio of 10: 1, the weight ratio of the ZnO to the SnO2 is 10: 6, the polymerization catalyst is tetramethylethylenediamine, the polymerization initiator is ammonium persulfate, and the dispersant is sodium tripolyphosphate, wherein the components are calculated according to parts by weight and comprise the following components: 100 parts of deionized water, 10 parts of polyvinyl alcohol, 10 parts of methacrylamide monomer, 1 part of N-N' -dimethyl bisacrylamide, 0.1 part of polymerization catalyst, 0.02 part of polymerization initiator and 0.5 part of dispersant.
Wherein the intelligent preparation device of the TZO semiconductor material for glass in the step 2) comprises a box body 1, the top of the box body 1 is provided with a box cover 2 in a matching way, the surface of the box body 1 is provided with a feed inlet 3 and a discharge outlet 4, the center of the upper surface of the box cover 2 is fixedly connected with a stirring mechanism 6, the inner wall of the box body 1 is fixedly connected with an adjusting device 5, the adjusting device 5 is fixedly connected with the stirring mechanism 6, a transmission device 7 is arranged in the box body 1, the transmission device 7 is fixedly connected with the adjusting device 5, the lower surface of the box cover 2 is fixedly connected with a material storage box 8, the material storage box 8 is rotatably arranged with the adjusting device 5, the material storage box 8 is rotatably arranged with the transmission device 7, the fixed surface of storage case 8 is connected with connecting pipe 9, connecting pipe 9 is linked together with the inner chamber of storage case 8, feed opening 10 has been seted up to the bottom of storage case 8.
As shown in fig. 3 and 4, the stirring mechanism 6 includes a motor box 11, a servo motor 12, a vertical column 13, a first gear 14, a second gear 15, a stirring column 16, a stirring rod 17 and a cross plate 18, the motor box 11 is fixedly connected to the center of the upper surface of the box cover 2, the servo motor 12 is installed inside the motor box 11, the vertical column 13 is fixedly connected to the output end of the servo motor 12, the first gear 14 is fixedly connected to one end of the vertical column 13 away from the servo motor 12, the second gear 15 is symmetrically engaged and connected to the outer side of the first gear 14, the cross plate 18 is fixedly connected to the inner wall of the box 1, the first gear 14 and the cross plate 18 are rotatably installed, two second gears 15 and the cross plate 18 are rotatably installed, the stirring column 16 is fixedly connected to the surface of the second gear 15, the stirring rod 17 is fixedly connected to the outer side of the stirring column 16 at equal intervals, servo motor 12 starts, drives upstand 13 and rotates, carousel 21 and upstand 13 fixed connection, and carousel 21 rotates along with upstand 13, and upstand 13 rotates and drives first gear 14 and rotate, and then drives two and first gear 14 meshing and be connected with second gear 15 and rotate, and two second gear 15 rotation directions are the same, and second gear 15 rotates and drives stirring column 16 and rotate, and a plurality of puddlers 17 rotate along with stirring column 16 rotates and stir.
As shown in fig. 3, the surface of the cross plate 18 is fixedly connected with an arc plate 19, the first gear 14 is rotatably mounted with the arc plate 19, the second gear 15 is rotatably mounted with the arc plate 19, and the stirring posts 16 are rotatably connected with the arc plate 19, so that the first gear 14 and the second gear 15 are prevented from contacting with a mixed solution or slurry, the mounting stability of the first gear 14 and the second gear 15 is ensured, and the supported slurry can be prevented from being accumulated on the surface of the arc plate 19.
As shown in fig. 3, the lower surface of the box cover 2 is symmetrically and fixedly connected with L-shaped plates 20, and the two L-shaped plates 20 are both fixedly connected with the storage box 8 to play a role in connection and ensure stable installation of the storage box 8.
As shown in fig. 5, 6 and 8, the adjusting device 5 comprises a rotating disc 21, a first rack 22, a connecting column 23 and a second rackThe box comprises a third gear 24, a fourth gear 25, a semicircular plate 26, a first arc-shaped groove 27, a second arc-shaped groove 28, a second rack 29, a spring 30, a limiting block 31, a first arc-shaped column 32 and a second arc-shaped column 49, wherein the semicircular plate 26 is fixedly connected to the inner wall of the box body 1 below the box cover 2, the first arc-shaped groove 27 is formed in the surface of the semicircular plate 26, the first arc-shaped column 32 is fixedly connected to the surface of the first arc-shaped groove 27, the limiting block 31 is fixedly connected to one end of the surface of the arc-shaped column, the spring 30 is fixedly connected to the surface of the limiting block 31, the second arc-shaped column is slidably mounted at one end, far away from the arc-shaped column, of the surface of the first arc-shaped groove 27, the second arc-shaped column 28 is formed in the end face, close to the first arc-shaped column 32, the second arc-shaped groove 28 is formed in the end, far away from the limiting block 31, is fixedly connected to the bottom of the second arc-shaped groove 28, the surface of the second arc-shaped column is fixedly connected with the first rack 22, one end of the surface of the first rack 22 is engaged and connected with a third gear 24, the upper part of the third gear 24 is rotatably connected with a connecting column 23 through a one-way bearing, one end of the connecting column 23 far away from the third gear 24 is fixedly connected with a fourth gear 25, the outer side of the fourth gear 25 is engaged and connected with a second rack 29, a rotary table 21 is rotatably installed above the storage box 8, the rotary table 21 is fixedly connected with the second rack 29, the rotary table 21 is fixedly connected with a vertical column 13, the rotary table 21 is rotatably installed with the box cover 2, the third gear 24 is engaged with the first rack 22, the third gear 24 rotates to drive a second arc-shaped column 49 to slide on the surface of the first arc-shaped groove 27, the spring 30 is compressed, the generated reaction force acts on the surface of the limiting block 31, the limiting block 31 and the first arc-shaped column 32 enter the second arc-shaped groove 28 until the second rack 29 is separated from the fourth gear 25, under the action of the elastic force of the spring 30, the second arc-shaped column 49 is restored to the initial position, the first rack 22 is matched with the third gear 24 to drive the third gear 24 to reversely rotate by the same angle, and further drive the first rotating column 34 to reversely rotate, the first bevel gear 36 and the second bevel gear 37 drive the second rotating column 38 to rotate, the convex block 39 is matched with the spiral groove 41 to drive the cross column 40 to be restored to the initial position, the two cover plates 45 are restored to the initial position, and the ZnO and SnO are stopped from being performed2Blanking the powder mixture.
As shown in fig. 5, a square plate 33 is fixedly connected to the surface of the semicircular plate 26, and the third gear 24 and the square plate 33 are rotatably mounted to ensure the stability of the mounting of the third gear 24.
As shown in fig. 3, 4, 6 and 7, the transmission device 7 includes a first rotating column 34, a mounting block 35, a first bevel gear 36, a second rotating column 37, a second rotating column 38, a projection 39, a transverse column 40, a spiral groove 41, a fixing block 42, a connecting rod 43, a fixing rod 44 and a cover plate 45, the first rotating column 34 is rotatably connected to the inside of the square plate 33, one end of the first rotating column 34 close to the semicircular plate 26 is fixedly connected to the third gear 24, one end of the first rotating column 34 far from the third gear 24 is fixedly connected to the first bevel gear 36, the outside of the first bevel gear 36 is engaged with the second bevel gear 37, the surface of the second bevel gear 37 is fixedly connected to the second rotating column 38, one end of the surface of the second rotating column 38 far from the second bevel gear 37 is fixedly connected to the projection 39, the surface of the second rotating column 38 is rotatably connected to the transverse column 40, the surface of the cross column 40 is provided with a spiral groove 41, the protruding block 39 is installed in cooperation with the spiral groove 41, the end surface of the cross column 40 away from the second bevel gear 37 is symmetrically and fixedly connected with a fixed block 42, a connecting rod 43 is arranged below the material storage tank 8, two connecting rods 43 are provided, one end of the connecting rod 43 is rotatably installed with the fixed block 42, the surface of the feed opening 10 is symmetrically and rotatably installed with a cover plate 45, the surface of the cover plate 45 is fixedly connected with a fixed rod 44, the fixed rod 44 is rotatably connected with one end of the connecting rod 43 away from the fixed block 42, the inner wall of the tank body 1 is positioned below the semicircular plate 26 and is fixedly connected with an installation block 35, the first bevel gear 36 and the second bevel gear 37 are rotatably installed with the installation block 35 to play a role in transmission, the third gear 24 rotates to drive the first rotating column 34 to rotate, and further drive the first bevel gear 36 to rotate, thereby driving the second bevel gear 37 to rotate and further driving the second rotating column 38 to rotate, the convex block 39 is matched with the spiral groove 41 to drive the cross column 40 to approach towards the direction of the feed opening 10, the cover plate 45 is symmetrically and rotatably installed on the surface of the feed opening 10, the end surface of the cross column 40 far away from the installation block 35 is symmetrically and fixedly connected with the fixed block 42, the cross column 40 is driven by two connecting rods 43 while moving,drives the two cover plates 45 to rotate, opens the feed opening 10, and ZnO and SnO2The powder mixture of (a) falls into the mixed solution.
As shown in fig. 2, a first feeding valve 46 is installed inside the feeding port 3, a discharging valve 47 is installed inside the discharging port 4, and a second feeding valve 48 is installed inside the connecting pipe 9, so that feeding and discharging are facilitated.
In fact, the specific preparation method can refer to the chinese patent with publication number CN108516819A, and the main innovation point of the present invention is that the equipment of the present invention is adopted, so that the whole process is more intelligent and automatic, and the following provides the working principle of the equipment of the present invention to help the skilled in the art to have more deep understanding and full working principle of the preparation process of the present invention: the upper surface of the box cover 2 can be provided with a controller, the servo motor 12, the first feeding valve 46, the second feeding valve 48 and the discharging valve 47 are all connected with the controller through leads, the controller is precisely controlled by a computer program, the first feeding valve 46 is opened, mixed solution is added, the second feeding valve 48 is opened, and ZnO and SnO are added2The powder mixture is controlled by a controller, a servo motor 12 is started to drive a vertical column 13 to rotate, a rotary table 21 is fixedly connected with the vertical column 13, the rotary table 21 rotates along with the vertical column 13, the vertical column 13 rotates to drive a first gear 14 to rotate, and then two second gears 15 which are meshed with the first gear 14 are driven to rotate, the rotation directions of the two second gears 15 are the same, the second gear 15 rotates to drive a stirring column 16 to rotate, a plurality of stirring rods 17 rotate along with the stirring column 16 to stir, a second rack 29 rotates along with the rotation of the rotary table 21, the second rack 29 is meshed with a fourth gear 25 in the rotating process to drive the fourth gear 25 to rotate, and then drive a connecting column 23 to rotate, the connecting column 23 is rotationally connected with a third gear 24 through a one-way bearing, and then drive the third gear 24 to rotate, and the third gear 24 rotates to drive a first rotating column 34 to rotate, thereby driving the first bevel gear 36 to rotate, further driving the second bevel gear 37 to rotate, further driving the second rotating column 38 to rotate, the protruding block 39 is matched with the spiral groove 41, driving the cross column 40 to approach towards the direction of the feed opening 10, the cover plate 45 is symmetrically and rotatably installed on the surface of the feed opening 10, and the cross column 40 is far awayFixed blocks 42 are symmetrically and fixedly connected with the end surfaces of the mounting blocks 35, the transverse columns 40 are driven by two connecting rods 43 to drive two cover plates 45 to rotate while moving, the feed opening 10 is opened, and ZnO and SnO are connected2The powder mixture falls into the mixed solution, the two stirring columns 16 have the same rotation direction, and can simultaneously drive the plurality of stirring rods 17 to drop ZnO and SnO in the mixed solution2The third gear 24 is meshed with the first rack 22, the third gear 24 rotates to drive the second arc-shaped column 49 to slide on the surface of the first arc-shaped groove 27, the spring 30 is compressed, the generated reaction force acts on the surface of the limiting block 31, the limiting block 31 and the first arc-shaped column 32 enter the second arc-shaped groove 28 until the second rack 29 is separated from the fourth gear 25, under the action of the elastic force of the spring 30, the second arc-shaped column 49 returns to the initial position, the first rack 22 is matched with the third gear 24 to drive the third gear 24 to rotate reversely by the same angle, and then the first rotating column 34 is driven to rotate reversely, the second rotating column 38 is driven to rotate by the first bevel gear 36 and the second bevel gear 37, the convex block 39 is matched with the spiral groove 41 to drive the cross column 40 to return to the initial position, the two cover plates 45 return to the initial position, and the ZnO and SnO are stopped.2The servo motor 12 drives the vertical column 13 to rotate, the process is repeated, and after a certain time, the controller controls the discharge valve 47 to open for discharging.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. The intelligent preparation process of the TZO semiconductor material for the glass uses an intelligent preparation device of the TZO semiconductor material for the glass, and is characterized by comprising the following steps of:
1) mixing a mixed solution of water and polyvinyl alcohol and a polymerization monomer in a stirring container, and adding a dispersing agent while mixing to obtain a mixed solution;
2) placing the mixed solution into an intelligent preparation device of the TZO semiconductor material for glass, and gradually adding ZnO and SnO into the mixed solution2The powder mixture is stirred while adding to ensure that ZnO and SnO2The powder mixture can fully react with the mixed solution for 40 minutes to prepare slurry;
3) the prepared slurry is fed from an intelligent preparation device of the TZO semiconductor material for glass, enters a ball milling mechanism for ball milling, is placed in a vacuum stirrer after ball milling, is added with a polymerization catalyst and a polymerization initiator, is stirred and mixed for 65 minutes and is at the temperature of 40 ℃;
4) placing the stirred material in a mold, performing injection molding to prepare a biscuit, drying the biscuit in air at 100 ℃, sintering the biscuit in an environment of 1400 ℃ for 4 hours, cooling the biscuit to room temperature, and reprocessing to obtain a TZO semiconductor material;
wherein the intelligent preparation device of the TZO semiconductor material for glass in the step 2) comprises a box body (1), a box cover (2) is installed at the top of the box body (1) in a matching manner, a feeding hole (3) and a discharging hole (4) are formed in the surface of the box body (1), a stirring mechanism (6) is fixedly connected to the center of the upper surface of the box cover (2), an adjusting device (5) is fixedly connected to the inner wall of the box body (1), the adjusting device (5) is fixedly connected with the stirring mechanism (6), a transmission device (7) is arranged inside the box body (1), the transmission device (7) is fixedly connected with the adjusting device (5), a storage box (8) is fixedly connected to the lower surface of the box cover (2), the storage box (8) is rotatably installed with the adjusting device (5), and the storage box (8) is rotatably installed with the transmission device (7), the fixed surface of storage case (8) is connected with connecting pipe (9), connecting pipe (9) are linked together with the inner chamber of storage case (8), feed opening (10) have been seted up to the bottom of storage case (8).
2. The intelligent preparation process of TZO semiconductor material for glass as claimed in claim 1, wherein the polymerization monomer is methacrylamide monomer and N-N' -dimethyl bisacrylamide in a weight ratio of 10: 1 of the resulting mixture.
3. The intelligent preparation process of TZO semiconductor material for glass as claimed in claim 2, wherein the ZnO and SnO are2The weight ratio of (A) to (B) is 10: 6.
4. the intelligent preparation process of TZO semiconductor material for glass as claimed in claim 3, wherein the polymerization catalyst is tetramethylethylenediamine, the polymerization initiator is ammonium persulfate, and the dispersant is sodium tripolyphosphate.
5. The intelligent preparation process of the TZO semiconductor material for glass as claimed in claim 4, wherein the TZO semiconductor material for glass comprises the following components in parts by weight: 100 parts of deionized water, 10 parts of polyvinyl alcohol, 10 parts of methacrylamide monomer, 1 part of N-N' -dimethyl bisacrylamide, 0.1 part of polymerization catalyst, 0.02 part of polymerization initiator and 0.5 part of dispersant.
6. The intelligent preparation process of the TZO semiconductor material for glass as claimed in claim 1, wherein the stirring mechanism (6) comprises a motor box (11), a servo motor (12), a vertical column (13), a first gear (14), a second gear (15), a stirring column (16), a stirring rod (17) and a cross plate (18), the motor box (11) is fixedly connected to the center of the upper surface of the box cover (2), the servo motor (12) is installed inside the motor box (11), the vertical column (13) is fixedly connected to the output end of the servo motor (12), the first gear (14) is fixedly connected to one end, far away from the servo motor (12), of the vertical column (13), the second gear (15) is symmetrically engaged and connected to the outer side of the first gear (14), the cross plate (18) is fixedly connected to the inner wall of the box body (1), and the first gear (14) and the cross plate (18) are rotatably installed, two second gear (15) and cross (18) rotate the installation, the fixed surface of second gear (15) is connected with stirring post (16), the outside equidistance fixedly connected with puddler (17) of stirring post (16).
7. The intelligent preparation process of TZO semiconductor material for glass as claimed in claim 6, wherein an arc-shaped plate (19) is fixedly connected to the surface of the cross plate (18), the first gear (14) is rotatably mounted with the arc-shaped plate (19), the two second gears (15) are rotatably mounted with the arc-shaped plate (19), and the two stirring columns (16) are rotatably connected with the arc-shaped plate (19); the lower surface of the box cover (2) is symmetrically and fixedly connected with L-shaped plates (20), and the two L-shaped plates (20) are fixedly connected with the material storage box (8).
8. The intelligent preparation process of the TZO semiconductor material for glass as claimed in claim 7, wherein the adjusting device (5) comprises a turntable (21), a first rack (22), a connecting column (23), a third gear (24), a fourth gear (25), a semi-circular plate (26), a first arc-shaped groove (27), a second arc-shaped groove (28), a second rack (29), a spring (30), a limiting block (31), a first arc-shaped column (32) and a second arc-shaped column (49), the semi-circular plate (26) is fixedly connected to the inner wall of the box body (1) below the box cover (2), the first arc-shaped groove (27) is formed in the surface of the semi-circular plate (26), the first arc-shaped column (32) is fixedly connected to the surface of the first arc-shaped groove (27), the limiting block (31) is fixedly connected to one end of the surface of the arc-shaped column, the spring (30) is fixedly connected to the surface of the limiting block (31), a second arc-shaped column is slidably mounted at one end, far away from the arc-shaped column, of the surface of the first arc-shaped groove (27), a second arc-shaped groove (28) is formed in the end face, close to the first arc-shaped column (32), of the second arc-shaped column, one end, far away from the limiting block (31), of the spring (30) is fixedly connected with the bottom of the second arc-shaped groove (28), a first rack (22) is fixedly connected with the surface of the second arc-shaped column, one end, far away from the third gear (24), of the first rack (22) is connected with a third gear (24) in a meshed mode, a connecting column (23) is rotatably connected onto the third gear (24) through a one-way bearing, a fourth gear (25) is fixedly connected with one end, far away from the third gear (24), of the connecting column (23), a second rack (29) is connected onto the outer side of the fourth gear (25) in a meshed mode, and a rotary table (21) is rotatably mounted above the storage box (8), carousel (21) and second rack (29) fixed connection, carousel (21) and upstand (13) fixed connection, carousel (21) and case lid (2) rotate the installation.
9. The intelligent TZO semiconductor material for glass manufacturing process according to claim 8, wherein a square plate (33) is fixedly connected to the surface of the semicircular plate (26), and the third gear (24) is rotatably installed with the square plate (33).
10. The intelligent TZO semiconductor material for glass as claimed in claim 8, wherein the transmission device (7) comprises a first rotating column (34), a mounting block (35), a first bevel gear (36), a second bevel gear (37), a second rotating column (38), a bump (39), a transverse column (40), a spiral groove (41), a fixing block (42), a connecting rod (43), a fixing rod (44) and a cover plate (45), the square plate (33) is connected with the first rotating column (34) in an internal rotating manner, one end of the first rotating column (34) close to the semicircular plate (26) is fixedly connected with the third gear (24), one end of the first rotating column (34) far away from the third gear (24) is fixedly connected with the first bevel gear (36), and the outer side of the first bevel gear (36) is connected with the second bevel gear (37) in a meshing manner, the fixed surface of second bevel gear (37) is connected with the second and rotates post (38), the second rotates post (38) one end fixedly connected with lug (39) of keeping away from second bevel gear (37) on the surface, the surface of second rotation post (38) rotates and is connected with spreader (40), helicla flute (41) have been seted up on the surface of spreader (40), lug (39) and helicla flute (41) cooperation installation, the terminal surface symmetry fixedly connected with fixed block (42) of keeping away from second bevel gear (37) is kept away from spreader (40), the below of storage case (8) is provided with connecting rod (43), and connecting rod (43) have two, the one end and the fixed block (42) of connecting rod (43) rotate the installation, apron (45) are installed in the rotation of the surface symmetry of feed opening (10), fixed surface connection dead lever (44) of apron (45), the fixing rod (44) is rotatably connected with one end, far away from the fixing block (42), of the connecting rod (43), the mounting block (35) is fixedly connected to the inner wall of the box body (1) below the semicircular plate (26), and the first bevel gear (36) and the second bevel gear (37) are rotatably mounted with the mounting block (35); the internally mounted of feed inlet (3) has first feed valve (46), the internally mounted of discharge gate (4) has bleeder valve (47), the internally mounted of connecting pipe (9) has second feed valve (48).
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| CN113459244B (en) | 2022-06-07 |
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