CN113451174A - Processing liquid temperature adjusting method, substrate processing method, processing liquid temperature adjusting device and substrate processing system - Google Patents
Processing liquid temperature adjusting method, substrate processing method, processing liquid temperature adjusting device and substrate processing system Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention provides a processing liquid temperature adjusting method, a substrate processing method, a processing liquid temperature adjusting device and a substrate processing system, wherein the concentration of the processing liquid used for processing a substrate can quickly reach a target value. The treatment liquid temperature adjusting method comprises the following steps: a step (S1) of heating a processing Liquid (LQ) for processing a substrate (W) to a temperature equal to or higher than the normal boiling point of the processing Liquid (LQ); a step (S2) for supplying a GAs (GA) that promotes evaporation of moisture from the heated processing Liquid (LQ) to the processing Liquid (LQ) stored in the 1 st storage tank (210); and a step (S3) for discharging the water vapor and the GAs (GA) from the 1 st storage tank (210). The treatment Liquid (LQ) is a liquid containing phosphoric acid.
Description
Technical Field
The invention relates to a processing liquid temperature adjusting method, a substrate processing method, a processing liquid temperature adjusting device and a substrate processing system.
Background
The substrate processing apparatus described in patent document 1 includes a processing bath, an acquisition unit, a storage unit, a specification unit, and a control unit.
The processing bath processes the substrate with the processing liquid. The acquisition unit acquires processing information of the substrate in advance. The storage unit stores correspondence information describing a plurality of cases that can be taken by the processing information and a plurality of density change patterns prepared in advance in correspondence with each of the plurality of cases. The specifying unit specifies a predicted density change pattern corresponding to the acquired processing information of the substrate by referring to the correspondence information. The control section controls the concentration of the processing liquid based on the predicted concentration change pattern while the substrate is processed in the processing bath.
As a result, even in the case where the variation in the concentration of the component in the processing liquid accompanying the substrate processing is large, the concentration of the processing liquid during the processing of the substrate can be controlled.
In particular, in the multilayer substrate described in patent document 1, a multilayer oxide film and a multilayer polysilicon film are formed on the upper surface area layer of the substrate main body, and a hole penetrating these layers in the direction of stacking them is formed. When the laminate substrate is immersed in an etching solution (phosphoric acid), the etching solution enters the hole, and the polysilicon layers are selectively etched from the inner peripheral surface (side wall) of the hole, and the polysilicon layers recede from the inner peripheral surface of the hole. The larger the number of films laminated on the substrate body and the deeper the hole, the larger the contact area between the inner peripheral surface of the hole and the etching solution, and therefore the larger the etching amount per unit time. Since the amount of silicon eluted from the substrate into the etching solution correlates with the etching amount, when a laminated substrate having a large number of laminated layers is etched, the change in concentration of the change component (silicon) in the processing solution accompanying the etching is larger than when a laminated substrate having a small number of laminated layers is etched.
In the substrate processing apparatus described in patent document 1, the control unit controls driving of a pump for replenishing the processing bath with the replenishment liquid stored in the backup bath based on the predicted concentration change pattern, and replenishes the processing bath with the replenishment liquid from the backup bath. As a result, even when the change in the concentration of the processing liquid is large in accordance with the processing of the laminated substrate having a large etching amount, the concentration of the processing liquid during the processing of the substrate can be maintained.
[ background Art document ]
[ patent document ]
[ patent document 1] Japanese patent laid-open No. 2018-164000
Disclosure of Invention
[ problems to be solved by the invention ]
However, in the substrate processing apparatus described in patent document 1, if the substrate is further highly laminated, the concentration of the changing component (silicon) in the processing liquid accompanying the etching changes more greatly. Therefore, a large amount of the treatment solution having an adjusted concentration must be replenished from the spare tank to the treatment tank. However, in the spare tank, it may be impossible to supply a large amount of the treatment liquid with the adjusted concentration to the treatment tank because the adjustment of the concentration is not in time.
The present invention has been made in view of the above problems, and an object thereof is to provide a processing liquid temperature adjusting method, a substrate processing method, a processing liquid temperature adjusting apparatus, and a substrate processing system, which can quickly reach a target value of the concentration of a processing liquid used for processing a substrate.
[ means for solving problems ]
According to one aspect of the present invention, a method for adjusting the temperature of a treatment liquid includes the steps of: heating a processing liquid used to process a substrate to above a normal boiling point of the processing liquid; supplying a gas for promoting evaporation of water from the heated treatment liquid to the treatment liquid stored in the 1 st storage tank; and discharging the water vapor and the gas from the 1 st storage tank. The treatment liquid is a liquid containing phosphoric acid.
The treatment liquid temperature control method of the present invention preferably further comprises the steps of: the processing liquid is supplied from the 1 st reservoir tank directly or indirectly to a substrate processing section that processes the substrate.
The treatment liquid temperature control method of the present invention preferably further comprises the steps of: supplying the treatment liquid from the 1 st storage tank to the 2 nd storage tank after the concentration of the treatment liquid stored in the 1 st storage tank reaches a target value; and adjusting the temperature of the treatment solution stored in the 2 nd storage tank so that the concentration of the treatment solution is maintained at the target value. Preferably, in the step of supplying the processing liquid, the processing liquid is supplied from the 2 nd reservoir tank to the substrate processing section.
In the method for controlling the temperature of a processing liquid according to the present invention, it is preferable that the 1 st storage tank is a processing tank for processing the substrate by immersing the substrate in the processing liquid. Preferably, the step of heating the processing liquid and the step of supplying the gas are performed while the substrate is not immersed in the processing liquid.
In the treatment liquid temperature control method according to the present invention, it is preferable that the step of heating the treatment liquid and the step of supplying the gas are performed after a part or all of the treatment liquid stored in the 1 st storage tank is discharged and a part or all of the treatment liquid is replaced with a new treatment liquid.
According to another aspect of the present invention, a method for adjusting the temperature of a treatment liquid includes the steps of: heating a processing liquid used to process a substrate to above a normal boiling point of the processing liquid; supplying a gas for promoting evaporation of water from the heated treatment liquid to the treatment liquid stored in the 1 st storage tank; discharging water vapor and the gas from the 1 st storage tank; supplying the treatment liquid from the 1 st storage tank to the 2 nd storage tank after the concentration of the treatment liquid stored in the 1 st storage tank reaches a target value; adjusting the temperature of the treatment solution stored in the 2 nd storage tank so that the concentration of the treatment solution is maintained at the target value; and supplying the processing liquid from the 2 nd reservoir tank to a substrate processing section that processes the substrate.
According to still another aspect of the present invention, a substrate processing method includes the processing liquid temperature adjusting method, and a step of processing a substrate with a processing liquid.
According to still another aspect of the present invention, a treatment liquid temperature control apparatus includes a 1 st temperature control unit, a 1 st storage tank, a gas supply member, and an exhaust pipe unit. A1 st temperature control unit heats a processing liquid for processing a substrate to a temperature equal to or higher than a normal boiling point of the processing liquid. The 1 st storage tank stores the treatment liquid heated by the 1 st temperature control unit. The gas supply means supplies a gas for promoting evaporation of moisture from the processing liquid stored in the 1 st storage tank to the processing liquid. The exhaust piping part exhausts the water vapor and the gas from the 1 st storage tank. The treatment liquid is a liquid containing phosphoric acid.
In the processing liquid temperature control apparatus of the present invention, it is preferable that the 1 st reservoir directly or indirectly supplies the processing liquid to a substrate processing unit that processes the substrate.
The treatment liquid temperature control apparatus of the present invention preferably further comprises a 2 nd storage tank and a 2 nd temperature control unit. Preferably, the 2 nd storage tank is supplied with the treatment liquid from the 1 st storage tank after the concentration of the treatment liquid stored in the 1 st storage tank reaches a target value. Preferably, the 2 nd temperature control unit adjusts the temperature of the treatment liquid stored in the 2 nd storage tank so that the concentration of the treatment liquid is maintained at the target value. Preferably, the 2 nd reservoir tank supplies the processing liquid to the substrate processing section.
In the treatment liquid temperature control apparatus according to the present invention, it is preferable that the 1 st storage tank is a treatment tank for treating the substrate by immersing the substrate in the treatment liquid. Preferably, the 1 st temperature adjustment unit heats the processing liquid to the normal boiling point or higher while the substrate is not immersed in the processing liquid. Preferably, the gas supply unit supplies the gas to the processing liquid stored in the 1 st storage tank during the period in which the substrate is not immersed in the processing liquid.
In the treatment liquid temperature control apparatus according to the present invention, it is preferable that the 1 st temperature control unit heats the treatment liquid to the normal boiling point or higher after a part or all of the treatment liquid stored in the 1 st storage tank is discharged and a part or all of the treatment liquid is replaced with a new treatment liquid. Preferably, the gas supply means supplies the gas to the processing liquid stored in the 1 st storage tank after a part or all of the processing liquid stored in the 1 st storage tank is discharged and a part or all of the processing liquid is replaced with a new processing liquid.
According to still another aspect of the present invention, a treatment liquid temperature control apparatus includes a 1 st temperature control unit, a 1 st storage tank, a gas supply member, an exhaust pipe portion, a 2 nd storage tank, and a 2 nd temperature control unit. A1 st temperature control unit heats a processing liquid for processing a substrate to a temperature equal to or higher than a normal boiling point of the processing liquid. The 1 st storage tank stores the treatment liquid heated by the 1 st temperature control unit. The gas supply means supplies a gas for promoting evaporation of moisture from the processing liquid stored in the 1 st storage tank to the processing liquid. The exhaust piping part exhausts the water vapor and the gas from the 1 st storage tank. The 2 nd storage tank is supplied with the treatment liquid from the 1 st storage tank after the concentration of the treatment liquid stored in the 1 st storage tank reaches a target value. The 2 nd temperature control unit adjusts the temperature of the treatment liquid stored in the 2 nd storage tank so that the concentration of the treatment liquid is maintained at the target value. The 2 nd reservoir tank supplies the processing liquid to a substrate processing unit that processes the substrate.
In the treatment liquid temperature control apparatus according to the present invention, it is preferable that the exhaust piping portion includes an exhaust piping for discharging the steam and the gas from the 1 st storage tank. Preferably, the cross-sectional area of the flow path of the exhaust pipe satisfies the following expression.
A×V≧Q
A: the cross-sectional area of the flow path of the exhaust pipe
V: a flow rate of the exhaust gas flowing through the flow path of the exhaust pipe when the process of heating the process liquid to the normal boiling point or higher and the process of supplying the gas to the process liquid are not performed
Q: the amount of the vapor and the gas discharged per unit time
In the treatment liquid temperature control apparatus according to the present invention, the material of the gas supply member is preferably a resin.
According to still another aspect of the present invention, a substrate processing system includes: the treatment liquid temperature adjusting device; and a substrate processing section for processing the substrate with the processing liquid.
[ Effect of the invention ]
According to the present invention, the concentration of the processing liquid that can be used to process the substrate quickly reaches a target value.
Drawings
Fig. 1 is a schematic view showing a substrate processing system according to embodiment 1 of the present invention.
Fig. 2 is a schematic sectional view showing the 1 st storage tank of the substrate processing system according to embodiment 1.
Fig. 3 is a schematic plan view showing a gas supply unit of the substrate processing system according to embodiment 1.
Fig. 4 is a flowchart showing a substrate processing method according to embodiment 1.
Fig. 5 is a schematic view showing a substrate processing system according to embodiment 2 of the present invention.
Fig. 6 is a flowchart showing a substrate processing method according to embodiment 2.
Fig. 7 is a schematic cross-sectional view showing a substrate processing system according to embodiment 3 of the present invention.
Fig. 8(a) is a view showing a state before the substrate of embodiment 3 is immersed in the treatment liquid. (b) The substrate of embodiment 3 is immersed in a treatment solution and then immersed in the treatment solution.
Fig. 9 is a schematic plan view showing a gas supply unit of a substrate processing system according to embodiment 3.
Fig. 10 is a flowchart showing a substrate processing method according to embodiment 3.
FIG. 11 is a graph showing the change with time of the specific gravity values of the treatment liquids of examples 1 and 2 of the present invention and comparative examples.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding portions are denoted by the same reference characters, and description thereof will not be repeated. In the embodiment of the present invention, the X axis, the Y axis, and the Z axis are orthogonal to each other, the X axis and the Y axis are parallel to the horizontal direction, and the Z axis is parallel to the vertical direction.
(embodiment mode 1)
A substrate processing system 100 and a substrate processing method according to embodiment 1 of the present invention will be described with reference to fig. 1 to 4. First, a substrate processing system 100 will be described with reference to fig. 1.
Fig. 1 is a schematic view showing a substrate processing system 100 according to embodiment 1 of the present invention. The substrate processing system 100 shown in fig. 1 is batch-type. Therefore, the substrate processing system 100 processes a plurality of substrates W together with the processing liquid LQ. The plurality of substrates W are subjected to at least 1 of etching treatment, surface treatment, property imparting, treatment film formation, film removal at least partially, and cleaning with the treatment liquid LQ.
The processing liquid LQ is, for example, a liquid (e.g., a chemical liquid) used to increase the concentration of the specific component to room temperature or higher by boiling. The liquid used to increase the concentration of the specific component to a level higher than that at room temperature or at room temperature by boiling is, for example, a liquid containing phosphoric acid. In this case, the "specific component" is "phosphoric acid".
The liquid containing phosphoric acid is, for example, an aqueous solution of phosphoric acid (hereinafter, referred to as "aqueous phosphoric acid solution"), a liquid containing an additive in the aqueous phosphoric acid solution, a mixed acid containing phosphoric acid, or a mixed acid containing phosphoric acid and an additive.
The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal Display device, a substrate for a plasma Display device, a substrate for a Field Emission Display (FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell.
The semiconductor wafer as the substrate W has, for example, a surface pattern for forming a three-dimensional flash memory (e.g., a three-dimensional NAND flash memory). For example, the surface pattern has a structure including 1 or more recesses (e.g., trenches or holes), and the structure is formed by alternately laminating a silicon oxide film and a silicon nitride film, or by alternately laminating a silicon oxide film and a polysilicon film. In this case, the silicon nitride film or the polysilicon film exposed on the side surface of the recess of the surface pattern is selectively etched by the treatment liquid LQ. In this case, for example, a liquid containing phosphoric acid is used as the processing liquid LQ.
As shown in FIG. 1, the substrate processing system 100 includes a processing apparatus U1, a processing liquid temperature adjusting apparatus U2, a cooling bath group U3, a controller U4, and a pipe P1. The control device U4 controls the processing device U1 and the treatment liquid temperature control device U2. The control device U4 is a computer, for example. In detail, the control device U4 includes a processor and a storage device. The processor includes, for example, a Central Processing Unit (CPU). The storage device stores data and computer programs. The storage device includes, for example, a main storage device and an auxiliary storage device. The main storage device includes, for example, a semiconductor memory. The auxiliary storage device includes, for example, a semiconductor memory, a solid state drive and/or a hard disk drive. The secondary storage device may also include, for example, removable media.
The processing apparatus U1 includes a plurality of substrate processing units 1, a plurality of cooling tanks 5, a plurality of valves 9, a plurality of valves 11, and a plurality of pipes P2. The plurality of cooling tanks 5 are disposed corresponding to the plurality of substrate processing units 1, respectively.
The plurality of substrate processing units 1 process the substrate W with the processing liquid LQ. Specifically, each of the plurality of substrate processing units 1 is of a batch type, and processes a plurality of substrates W together with the processing liquid LQ. Each of the plurality of substrate processing sections 1 includes a processing bath 3. Each of the treatment tanks 3 stores a treatment liquid LQ. Each processing bath 3 accommodates a plurality of substrates W. The plurality of substrates W are immersed in the processing liquid LQ in each processing bath 3. As a result, the plurality of substrates W are processed by the processing liquid LQ in each processing bath 3.
Specifically, the processing bath 3 has a double-bath structure including an inner bath 31 and an outer bath 33. The inner tank 31 and the outer tank 33 each have an upper opening that opens upward. The inner tank 31 is configured to store the processing liquid LQ and to accommodate a plurality of substrates W. The outer tank 33 is provided on the outer surface of the upper opening of the inner tank 31.
The pipe P2 branches from the pipe P1. The pipe P2 extends to the cooling bath 5. The valve 9 is disposed in the pipe P2. The valve 9 closes or opens the pipe P2. The valve 9 opens the pipe P2, and the pipe P2 guides the processing liquid LQ overflowing from the outer tank 33 to the cooling tank 5. Then, the cooling tank 5 cools the processing liquid LQ and then discharges the processing liquid LQ.
The pipe P1 extends to the cooling bath group U3. The cooling bath group U3 includes a plurality of cooling baths 350 corresponding to the plurality of substrate processing units 1, respectively. The pipe P1 extends from the treatment tank 3 to the cooling tank 350. The valve 11 is disposed in the pipe P1. The valve 11 closes or opens the pipe P1. The valve 11 opens the pipe P1, and the pipe P1 guides the processing liquid LQ overflowing from the outer tank 33 to the cooling tank 350. Then, the cooling tank 350 cools the processing liquid LQ and then discharges the processing liquid LQ.
The processing liquid temperature adjusting device U2 supplies the processing liquid LQ to each substrate processing unit 1 (specifically, each processing bath 3). That is, the processing liquid temperature adjusting device U2 replenishes the processing liquid LQ to each substrate processing unit 1 (specifically, each processing bath 3).
Specifically, the treatment liquid temperature control device U2 includes a 1 st temperature control unit 200 and a 2 nd temperature control unit 300. The 1 st temperature regulating unit 200 heats the processing liquid LQ to evaporate moisture from the processing liquid LQ supplied from the processing liquid supply source TKA, thereby bringing the concentration of the processing liquid LQ to a target value. The target value of the concentration may also have a fixed range. The concentration of the processing liquid LQ indicates the concentration of a specific component in the processing liquid LQ. When the processing liquid LQ is a liquid containing phosphoric acid, the concentration of the processing liquid LQ indicates the concentration of phosphoric acid in the processing liquid LQ (hereinafter, referred to as "phosphoric acid concentration").
Then, the 1 st temperature control unit 200 supplies the processing liquid LQ having the concentration reaching the target value to the 2 nd temperature control unit 300. The 2 nd temperature control unit 300 supplies the processing liquid LQ to each substrate processing unit 1 (specifically, each processing bath 3) while maintaining the temperature and the concentration of the processing liquid LQ supplied from the 1 st temperature control unit 200. That is, the 2 nd temperature control unit 300 supplies the processing liquid LQ to each substrate processing unit 1 (specifically, each processing bath 3).
Specifically, the 1 st temperature control unit 200 includes a 1 st storage tank 210, a 1 st measuring unit 212, a valve 214, a 1 st filter 215, a 1 st heater 216, a 1 st pump 218, a valve 220, a flow rate adjustment valve 221, a valve 222, a valve 223, a pipe P4, a pipe P5, a 1 st circulation pipe P6, a pipe P7, and a pipe P10. In the example of fig. 1, the 1 st temperature control unit 200 includes a plurality of 1 st heaters 216 (specifically, 21 st heaters 216) connected in series. The 1 st heater 216 corresponds to an example of the "1 st temperature adjustment unit". For example, the 1 st filter 215 may be omitted from the 1 st temperature control unit 200.
The 2 nd temperature control unit 300 includes a 2 nd storage tank 310, a 2 nd measuring unit 312, a plurality of valves 314, a 2 nd filter 315, a 2 nd heater 316, a 2 nd pump 318, a plurality of pipes P3, a pipe P8, a valve 320, and a 2 nd circulation pipe P9. The 2 nd heater 316 corresponds to an example of the "2 nd temperature adjusting unit".
In the 1 st temperature control unit 200, the pipe P4 extends from the process liquid supply source TKA to the 1 st reservoir tank 210. The valve 222 is disposed in the pipe P4. The valve 222 closes or opens the pipe P4. The pipe P5 extends from the diluent supply source TKB to the 1 st storage tank 210. The valve 224 is disposed in the pipe P5. The valve 224 closes or opens the pipe P5.
The 1 st circulation pipe P6 extends from the bottom to the upper part of the 1 st storage tank 210. The valve 214 is disposed in the 1 st circulation pipe P6. The valve 214 closes or opens the 1 st circulation pipe P6. The 1 st pump 218, the 1 st heater 216, and the 1 st filter 215 are disposed in the 1 st circulation pipe P6 in this order from the upstream side to the downstream side of the 1 st circulation pipe P6.
The pipe P7 branches off from the 1 st circulation pipe P6 and extends to the 2 nd temperature control unit 300. Specifically, the pipe P7 branches off from the 1 st circulation pipe P6 and extends to the 2 nd storage tank 310. The valve 220 is disposed in the pipe P7. The valve 220 closes or opens the pipe P7. Further, the pipe P10 connects the upstream side and the downstream side of the valve 220 on the pipe P7. The flow rate adjustment valve 221 is disposed in the pipe P10. The flow rate adjustment valve 221 adjusts the flow rate of the treatment liquid LQ flowing through the pipe P10. The valve 223 is disposed downstream of the flow rate adjustment valve 221 in the pipe P10. The valve 223 closes or opens the pipe P10.
In the temperature control unit 2 300, the pipe P8 extends from the diluent supply source TKB to the storage tank 2 310. The valve 320 is disposed in the pipe P8. The valve 320 closes or opens the pipe P8. The 2 nd circulation pipe P9 extends from the bottom to the upper part of the 2 nd storage tank 310. The 2 nd pump 318, the 2 nd heater 316, and the 2 nd filter 315 are disposed in the 2 nd circulation pipe P9 from the upstream side to the downstream side of the 2 nd circulation pipe P9 in this order.
The plurality of pipes P3 are disposed corresponding to the plurality of substrate processing units 1, respectively. Each of the pipes P3 branches off from the 2 nd circulation pipe P9 and extends to the corresponding substrate processing unit 1. Specifically, each of the pipes P3 branches off from the 2 nd circulation pipe P9 and extends to the corresponding processing tank 3. Each of the plurality of valves 314 is disposed in the corresponding pipe P3. The valve 314 closes or opens the pipe P3.
Next, the operation of the 1 st temperature control unit 200 will be described with reference to fig. 1. When the valve 222 opens the pipe P4, the pipe P4 supplies the processing liquid LQ supplied from the processing liquid supply source TKA to the 1 st reservoir tank 210.
The 1 st reservoir tank 210 stores the processing liquid LQ supplied from the processing liquid supply source TKA. The 1 st reserve tank 210 has an upper opening and a lid (hereinafter referred to as "lid 240") that are open upward.
The 1 st circulation pipe P6 reintroduces the processing liquid LQ sent from the 1 st storage tank 210 into the 1 st storage tank 210 to circulate the processing liquid LQ. Specifically, the 1 st circulation pipe P6 returns the treatment liquid LQ sent out from the bottom of the 1 st storage tank 210 to the 1 st storage tank 210 by introducing the treatment liquid LQ into the upper opening of the 1 st storage tank 210.
More specifically, when the valve 214 opens the 1 st circulation pipe P6 and the valve 220 closes the pipe P7, the 1 st pump 218 sends the treatment liquid LQ sent from the 1 st storage tank 210 toward the upper opening of the 1 st storage tank 210 through the 1 st circulation pipe P6. The 1 st filter 215 filters the treatment liquid LQ flowing through the 1 st circulation pipe P6.
The 1 st heater 216 adjusts the temperature of the processing liquid LQ. Specifically, the 1 st heater 216 heats the processing liquid LQ supplied to the 1 st reservoir tank 210 and used for processing the substrate W to a temperature equal to or higher than the normal boiling point of the processing liquid LQ. That is, the 1 st heater 216 heats the processing liquid LQ flowing through the 1 st circulation pipe P6 to a temperature equal to or higher than the normal boiling point of the processing liquid LQ. Further, the 1 st temperature regulating unit 200 supplies the diluent from the diluent supply source TKB to the 1 st storage tank 210 based on the measurement result of the 1 st measuring part 212 while making the concentration of the processing liquid LQ reach the target value according to the control condition in the processing tank 3.
The normal boiling point of the processing liquid LQ is a boiling point at the concentration of the processing liquid LQ resupplied to the 1 st reservoir tank 210 from the processing liquid supply source TKA instead of the 1 st circulation pipe P6. Generally, if the concentration of the processing liquid LQ becomes high, the boiling point of the processing liquid LQ increases. The diluent is, for example, water. The water may be any of DIW (deionized water), carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10ppm to 100 ppm).
In the case where the processing liquid LQ is an aqueous phosphoric acid solution, for example, the aqueous phosphoric acid solution resupplied from the processing liquid supply source TKA to the 1 st reservoir tank 210 has a phosphoric acid concentration of 85% at room temperature. The boiling point of the phosphoric acid aqueous solution at a phosphoric acid concentration of 85% was 157 ℃. In this case, therefore, the standard boiling point of the aqueous phosphoric acid solution is 157 ℃. In this case, the 1 st heater 216 heats the phosphoric acid aqueous solution flowing through the 1 st circulation pipe P6 to 160 ℃ or higher, which is a normal boiling point of 157 ℃. Further, the 1 st temperature adjusting unit 200 supplies the diluent from the diluent supply source TKB to the 1 st storage tank 210 based on the measurement result of the 1 st measuring part 212 while making the phosphoric acid concentration of the phosphoric acid aqueous solution 89% according to the control condition in the processing tank 3. In this case, "89%" is the target value of the concentration.
The 1 st measuring unit 212 measures a physical quantity indicating the concentration of the processing liquid LQ stored in the 1 st storage tank 210. In the present specification, the physical quantity indicating the concentration of the treatment liquid LQ is a value substantially proportional to the concentration of the treatment liquid LQ. For example, the physical quantity indicating the concentration of the processing liquid LQ is the concentration or specific gravity of a specific component in the processing liquid LQ. Therefore, the 1 st measuring unit 212 is, for example, a densitometer or a densitometer. The 1 st measuring unit 212 may measure a physical quantity indicating the concentration of the processing liquid LQ flowing through the 1 st circulation pipe P6. The concentration and temperature of the treatment liquid LQ flowing through the 1 st circulation pipe P6 are substantially the same as those of the treatment liquid LQ stored in the 1 st storage tank 210, respectively.
For example, the controller U4 may open the valve 224 based on the measurement result of the 1 st measuring unit 212 so that the concentration of the processing liquid LQ becomes a target value, and supply the diluent from the diluent supply source TKB to the 1 st reservoir tank 210.
After the concentration of the processing liquid LQ stored in the 1 st storage tank 210 reaches a target value, the 1 st storage tank 210 supplies the processing liquid LQ to the 2 nd storage tank 310.
Specifically, after the concentration of the treatment liquid LQ in the 1 st storage tank 210 reaches the target value, the valve 223 opens the pipe P10, and the flow rate adjustment valve 221 adjusts the flow rate of the treatment liquid LQ, so that the treatment liquid LQ is supplied from the 1 st storage tank 210 to the 2 nd storage tank 310 through the pipe P10 and the pipe P7 on the downstream side of the valve 220. In this case, the valve 214 opens the 1 st circulation pipe P6, and the valve 220 closes the pipe P7. Specifically, after the concentration of the treatment liquid LQ in the 1 st storage tank 210 reaches the target value, the 1 st pump 218 supplies the treatment liquid LQ to the 2 nd storage tank 310 through the 1 st circulation pipe P6, the pipe P10, and the pipe P7 on the downstream side of the valve 220.
In the present specification, "after the concentration of the treatment liquid LQ reaches the target value" means "after the physical quantity indicating the concentration of the treatment liquid LQ reaches the target value", not only "after the concentration value indicating the concentration of the treatment liquid LQ reaches the target value", but also "after the specific gravity value of the treatment liquid LQ reaches the target value", for example.
Next, the operation of the 2 nd temperature control unit 300 will be described with reference to fig. 1. The 2 nd storage tank 310 stores the processing liquid LQ supplied from the 1 st storage tank 210. The treatment liquid LQ supplied from the 1 st reservoir tank 210 has a concentration reaching a target value. The 2 nd reservoir 310 has an upper opening and a lid that are open upward.
The 2 nd circulation pipe P9 reintroduces the treatment liquid LQ sent from the 2 nd storage tank 310 into the 2 nd storage tank 310 to circulate the treatment liquid LQ. Specifically, the 2 nd circulation pipe P9 returns the treatment liquid LQ sent out from the bottom of the 2 nd storage tank 310 to the 2 nd storage tank 310 by introducing the treatment liquid LQ into the upper opening of the 2 nd storage tank 310.
More specifically, when each of the plurality of valves 314 closes the corresponding pipe P3, the 2 nd pump 318 sends the processing liquid LQ sent from the 2 nd storage tank 310 toward the upper opening of the 2 nd storage tank 310 through the 2 nd circulation pipe P9. The 2 nd filter 315 filters the treatment liquid LQ flowing through the 2 nd circulation pipe P9.
The 2 nd heater 316 adjusts the temperature of the processing liquid LQ. Specifically, the 2 nd heater 316 adjusts the temperature of the treatment liquid LQ stored in the 2 nd storage tank 310 to indirectly maintain the concentration of the treatment liquid LQ at a target value. That is, the 2 nd heater 316 indirectly maintains the concentration of the treatment liquid LQ at the target value by adjusting the temperature of the treatment liquid LQ flowing through the 2 nd circulation pipe P9. Specifically, the 2 nd heater 316 maintains the temperature of the treatment liquid LQ at a predetermined temperature equal to or higher than the normal boiling point. Then, in a state where the temperature of the processing liquid LQ is maintained at the predetermined temperature equal to or higher than the normal boiling point, the diluent is supplied from the diluent supply source TKB to the 2 nd reservoir tank 310 through the valve 320 and the pipe P8 based on the measurement result of the 2 nd measuring unit 312, whereby the concentration of the processing liquid LQ is maintained at the target value.
Since the 2 nd heater 316 is a device for maintaining the temperature of the treatment liquid LQ at a predetermined temperature equal to or higher than the normal boiling point, the capacitance (electric power) of the 2 nd heater 316 may be smaller than the total capacitance (total electric power) of the 21 st heaters 216 of the 1 st temperature adjustment unit 200. For example, the aggregate capacitance of the 21 st heaters 216 is 2 times the capacitance of the 2 nd heater 316. That is, the capacitance of each of the 21 st heaters 216 is substantially the same as that of the 2 nd heater 316.
The 2 nd measuring unit 312 measures a physical quantity indicating the concentration of the processing liquid LQ stored in the 2 nd reservoir 310. For example, the 2 nd measuring part 312 is a densitometer or a densitometer. The 2 nd measuring unit 312 may measure a physical quantity indicating the concentration of the processing liquid LQ flowing through the 2 nd circulation pipe P9. The concentration and temperature of the treatment liquid LQ flowing through the 2 nd circulation pipe P9 are substantially the same as those of the treatment liquid LQ stored in the 2 nd storage tank 310, respectively.
For example, the controller U4 may open the valve 320 based on the measurement result of the 2 nd measuring unit 312 to supply the diluent from the diluent supply source TKB to the 2 nd reservoir tank 310 in order to maintain the concentration of the processing liquid LQ at the target value.
The 2 nd reservoir tank 310 supplies the processing liquid LQ to the substrate processing section 1 (specifically, the processing tank 3). That is, the 2 nd reservoir tank 310 replenishes the processing liquid LQ to the substrate processing section 1 (specifically, the processing bath 3).
Specifically, when the valve 314 opens the pipe P3, the processing liquid LQ is supplied from the 2 nd circulation pipe P9 to the processing tank 3 through the pipe P3. For example, the processing liquid LQ may be supplied from the 2 nd reservoir tank 310 to the outer tank 33 of the processing tank 3, and may be supplied from the outer tank 33 to the inner tank 31 through a circulation pipe (not shown). For example, the processing liquid LQ may be supplied directly from the 2 nd reservoir tank 310 to the inner tank 31.
The control device U4 may individually control each of the plurality of valves 314. Therefore, the processing liquid LQ can be supplied from the 2 nd reservoir tank 310 to each substrate processing unit 1 (specifically, each processing bath 3) individually.
Next, the 1 st temperature adjusting means 200 will be described with reference to fig. 2. Fig. 2 is a schematic sectional view showing the 1 st reservoir tank 210 of the 1 st temperature control unit 200. In fig. 2, the pipes P4, P5, the 1 st filter 215, the 1 st pump 218, the valve 214, and the 1 st measuring unit 212 are omitted for simplification of the drawing.
As shown in FIG. 2, the 1 st reserve tank 210 includes a tank main body 230 and a lid 240. The cover 240 covers the upper opening of the tank body 230. The cover 240 may also open the upper opening of the tank body 230.
The 1 st temperature control unit 200 further includes a gas supply mechanism 250, a gas supply unit 280, and a pipe 261.
The GAs supply mechanism 250 supplies the GAs GA to the GAs supply unit 280 through the pipe 261.
The GAs supply unit 280 supplies the GAs GA supplied from the GAs supply mechanism 250 to the processing liquid LQ stored in the 1 st storage tank 210. Specifically, the gas supply unit 280 includes at least 1 gas supply member 281, a 1 st pipe 283, a 2 nd pipe 285, a 1 st holding member 287, a 2 nd holding member 289, a 1 st fixing member 291, and a 2 nd fixing member 293. In embodiment 1, the gas supply unit 280 includes a plurality of gas supply members 281. Further, fig. 2 shows 1 gas supply member 281.
The GAs GA is a GAs that promotes evaporation of moisture from the processing liquid LQ heated to a normal boiling point or higher by the 1 st heater 216. The GAs GA is, for example, an inert GAs. The inert gas is, for example, nitrogen or argon.
The gas supply unit 281 is disposed inside the 1 st storage tank 210. Specifically, the gas supply unit 281 is disposed in the bottom 230a of the 1 st storage tank 210 inside the 1 st storage tank 210. The gas supply member 281 is fixed to the bottom 230a of the 1 st reservoir 210. The gas supply unit 281 may be in contact with the bottom 230a of the 1 st reservoir 210 or may be separated from the bottom 230a of the 1 st reservoir 210.
The GAs supply unit 281 supplies the GAs GA to the processing liquid LQ stored in the 1 st storage tank 210 and heated to a normal boiling point or higher. The gas supply member 281 is, for example, a bubbler. Specifically, the GAs supply unit 281 supplies the GAs GA to the processing liquid LQ upward, that is, toward the liquid surface of the processing liquid LQ. In this case, the GAs supply part 281 supplies the GAs GA to the processing liquid LQ in the form of bubbles BB.
Specifically, the gas supply member 281 is substantially parallel to the 1 st direction D1. The 1 st direction D1 is, for example, substantially parallel to the horizontal direction. The gas supply member 281 is disposed along the bottom 230a of the 1 st reservoir 210.
The gas supply member 281 has a substantially cylindrical shape. The gas supply member 281 is, for example, a pipe. The material of the gas supply member 281 is, for example, quartz or resin. The resin is, for example, PFA (tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer), PTFE (polytetrafluoroethylene), or PEEK (polyetheretherketone).
In particular, if the material of the gas supply member 281 is resin, the gas supply member 281 can be easily processed. Further, if the material of the gas supply member 281 is PFA, the bending process is easily performed. For example, the gas supply member 281 may be formed in an L shape. Therefore, the number of joints between the gas supply member 281 and other pipes can be reduced. As a result, the durability of the gas supply member 281 can be improved.
Here, in fig. 2, a cross section of the right end portion of the gas supply member 281 is shown for ease of understanding. The gas supply member 281 has a flow path FW 0.
The gas supply member 281 has a plurality of gas supply ports G. The gas supply port G is, for example, a hole. The diameter of the gas supply port G is, for example, about several tens μm to several hundreds μm. For example, the diameter of the gas supply port G is 0.2 mm. For example, the number of the gas supply ports G provided in the 1 gas supply member 281 is, for example, 40.
The GAs supply unit 281 supplies the GAs GA from the plurality of GAs supply ports G toward the processing liquid LQ stored in the 1 st reservoir 210 and heated to a normal boiling point or higher. Specifically, the GAs supply unit 281 supplies the GAs GA as a plurality of bubbles BB from the plurality of GAs supply ports G toward the processing liquid LQ stored in the 1 st reservoir 210 and heated to a normal boiling point or higher. That is, the GAs supply unit 281 blows the GAs GA from the plurality of GAs supply ports G toward the processing liquid LQ stored in the 1 st storage tank 210 and having a temperature equal to or higher than the normal boiling point, thereby generating a plurality of air bubbles BB (large amount of air bubbles BB) from the plurality of GAs supply ports G in the processing liquid LQ having a temperature equal to or higher than the normal boiling point.
The GAs supply unit 281 is not particularly limited in its structure and material as long as it can supply the GAs GA (specifically, the bubbles BB) to the processing liquid LQ. For example, the gas supply member 281 may include a porous member having a substantially cylindrical shape. For example, the gas supply member 281 may be configured by fixing a porous member to a member having a substantially cylindrical shape.
The 1 st temperature adjusting unit 200 further includes an exhaust pipe portion 270. The exhaust pipe 270 is connected to the upper part of the 1 st storage tank 210. In the example of fig. 2, the exhaust pipe section 270 is connected to the lid 240. The exhaust pipe section 270 exhausts the water vapor and gas from the 1 st storage tank 210. The GAs discharged from the GAs discharge pipe section 270 is the GAs GA supplied from the GAs supply unit 281 to the processing liquid LQ heated to a normal boiling point or higher and coming out from the liquid surface of the processing liquid LQ. The water vapor discharged from the exhaust pipe section 270 is water vapor generated by evaporation of water contained in the processing liquid LQ heated to a normal boiling point or higher and coming out from the liquid surface of the processing liquid LQ.
Specifically, the exhaust pipe section 270 includes a connecting member 271 and an exhaust pipe 273. The connecting member 271 connects the 1 st storage tank 210 and the exhaust pipe 273. Specifically, one end of the coupling member 271 is connected to the upper portion of the first storage tank 210 (the lid 240 in the example of fig. 2), and the other end of the coupling member 271 is connected to the exhaust pipe 273. The exhaust pipe 273 has, for example, a substantially cylindrical shape. The exhaust pipe 273 discharges the water vapor and the gas from the 1 st storage tank 210. That is, the exhaust pipe 273 exhausts the water vapor and the gas flowing from the 1 st storage tank 210 through the coupling member 271 to the outside of the 1 st storage tank 210.
As described above with reference to fig. 1 and 2, according to embodiment 1, the GAs supply member 281 of the 1 st temperature control unit 200 supplies the GAs GA that promotes evaporation of water to the processing liquid LQ heated to the normal boiling point or higher by the 1 st heater 216. Thereby, evaporation of water in the processing liquid LQ is promoted. As a result, the concentration of the processing liquid LQ can be made to reach the target value more quickly than in the case where the GAs GA is not supplied.
Further, if the concentration of the processing liquid LQ can be quickly brought to the target value in the 1 st reservoir 210, the "supply amount per fixed time" of the processing liquid LQ whose concentration reaches the target value can be increased from the 1 st reservoir 210 to the 2 nd reservoir 310. Therefore, even when the concentration of the processing liquid LQ stored in the processing tank 3 varies greatly, a large amount of the processing liquid LQ having a concentration reaching the target value can be supplied from the 2 nd storage tank 310 to the processing tank 3. As a result, the concentration of the processing liquid LQ can be maintained in the processing bath 3. This makes it possible to perform uniform processing of a plurality of substrates W.
For example, when a semiconductor wafer as the substrate W has a surface pattern for forming a three-dimensional flash memory, the amount of silicon etched by the phosphoric acid aqueous solution as the processing liquid LQ increases because the recessed portion of the surface pattern is deep. Therefore, in order to maintain the concentration of the processing liquid LQ in the processing tank 3 constant, a large amount of the processing liquid LQ having a concentration reaching a target value must be supplied to the processing tank 3. Therefore, in embodiment 1, the concentration of the processing liquid LQ is quickly brought to the target value by supplying the GAs GA to the processing liquid LQ heated to the normal boiling point or higher to promote the evaporation of water. Therefore, even when the concentration of silicon in the processing liquid LQ stored in the processing tank 3 varies greatly, a large amount of the processing liquid LQ having a concentration reaching a target value can be supplied from the 1 st storage tank 210 to the 2 nd storage tank 310, and further from the 2 nd storage tank 310 to the processing tank 3. As a result, the concentration of the processing liquid LQ can be maintained in the processing bath 3, and the processing of the plurality of substrates W can be made uniform.
In embodiment 1, since the substrate processing system 100 includes a plurality of substrate processing units 1, the amount of the processing liquid LQ used is large. However, in embodiment 1, since the concentration of the processing liquid LQ can be quickly brought to the target value, even when the substrate processing system 100 includes a plurality of substrate processing units 1, the processing liquid LQ having the concentration brought to the target value can be stably supplied from the 2 nd reservoir tank 310 to the processing tank 3 of each substrate processing unit 1 at a desired flow rate.
In embodiment 1, the GAs supply unit 281 supplies the bubbles BB of the GAs GA to the processing liquid LQ in the 1 st reservoir 210. Therefore, the water in the processing liquid LQ is transported upward toward the liquid surface by the air bubbles BB rising toward the liquid surface of the processing liquid LQ. As a result, evaporation of water in the processing liquid LQ can be further promoted. In particular, when the processing liquid LQ is close to the boiling state, the amount of moisture contained in the air bubbles BB increases, and more moisture is released from the liquid surface, thereby improving the evaporation efficiency of the moisture. This enables the concentration of the treatment liquid LQ to reach the target value more quickly.
In particular, the gas supply member 281 is preferably disposed substantially parallel to the 1 st direction D1 (horizontal direction) at the bottom 230a of the 1 st storage tank 210. In this preferred example, the movement distance of the air bubbles BB supplied from the plurality of gas supply ports G is longer than in the case where the gas supply member 281 is disposed substantially parallel to the vertical direction. As a result, evaporation of water in the processing liquid LQ can be further promoted, and the concentration of the processing liquid LQ can be brought to the target value more quickly.
In embodiment 1, in order to make the concentration of the treatment liquid LQ stored in the 1 st storage tank 210 a target value, the GAs GA is supplied to the treatment liquid LQ, and the treatment liquid LQ is heated to a normal boiling point or higher. Therefore, in the 1 st reservoir tank 210, the GAs GA comes out of the processing liquid LQ, and moisture evaporates from the processing liquid LQ.
After the concentration of the processing liquid LQ stored in the 1 st storage tank 210 reaches a target value, the processing liquid LQ is supplied from the 1 st storage tank 210 to the 2 nd storage tank 310. Further, the 2 nd heater 316 adjusts the temperature of the treatment liquid LQ stored in the 2 nd reservoir tank 310 so as to maintain the concentration of the treatment liquid LQ at a target value. Therefore, in the 2 nd reservoir 310, moisture is not substantially evaporated from the processing liquid LQ. The reason for this is that: the moisture in the processing liquid LQ is substantially evaporated in the 1 st reservoir 210. In the 2 nd storage tank 310, the GAs GA is not supplied to the processing liquid LQ. As a result, the processing liquid LQ supplied from the 2 nd storage tank 310 to the 2 nd circulation pipe P9 contains almost no gas such as water vapor. This enables the flow rate of the treatment liquid LQ flowing through the 2 nd circulation pipe P9 to be appropriately controlled. Further, the flow rate of the processing liquid LQ supplied from the 2 nd circulation pipe P9 and the pipe P3 to the substrate processing section 1 (specifically, the processing bath 3) can be appropriately controlled.
In embodiment 1, the treatment liquid LQ is preferably a "liquid containing phosphoric acid". In this case, the processing liquid LQ is a liquid used by boiling to make the concentration of the specific component (phosphoric acid) higher than that at room temperature or room temperature. Therefore, in the case where the processing liquid LQ is a "liquid containing phosphoric acid", it is particularly effective to quickly reach the target value of the concentration of the processing liquid LQ by heating the processing liquid LQ to the normal boiling point or higher and supplying the GAs GA to the processing liquid LQ.
Further, in embodiment 1, the processing liquid LQ is supplied to the substrate processing section 1 (specifically, the processing bath 3) indirectly from the 1 st reservoir 210, that is, via the 2 nd reservoir 310. That is, the 1 st reservoir tank 210 indirectly supplies the processing liquid LQ to the substrate processing unit 1 (specifically, the processing tank 3).
However, the substrate processing system 100 may not include the 2 nd temperature control unit 300. Specifically, the processing liquid LQ may be directly supplied from the 1 st reservoir tank 210 to the substrate processing section 1 (specifically, the processing bath 3). That is, the 1 st reservoir tank 210 may directly supply the processing liquid LQ to the substrate processing unit 1 (specifically, the processing bath 3). In this case, the concentration of the treatment liquid LQ in the 1 st storage tank 210 can be quickly brought to a target value. When the processing liquid LQ is supplied directly from the 1 st reservoir 210 to the substrate processing section 1, for example, a plurality of pipes P3 are connected to the 1 st circulation pipe P6 of the 1 st temperature control unit 200, and a plurality of valves 314 are disposed in each of the plurality of pipes P3. In this case, the valves 214, 220 are not provided.
In embodiment 1, as shown in fig. 2, it is preferable that the cross-sectional area a of the flow passage 275 of the exhaust pipe 273 satisfies formula (1). In the formula (1), "V" represents the flow rate of the exhaust GAs flowing through the flow channel 275 of the exhaust pipe 273 when the process of heating the process liquid LQ to the normal boiling point or higher and the process of supplying the GAs GA to the process liquid LQ are not performed. "Q" represents the amount of exhaust of the water vapor and the GAs GA from the liquid surface of the processing liquid LQ per unit time.
A×V≧Q (1)
When the cross-sectional area a of the flow path 275 of the exhaust pipe 273 satisfies the formula (1), the water vapor and the gas discharged from the liquid surface of the processing liquid LQ can be efficiently discharged. Therefore, evaporation of water in the processing liquid LQ is further promoted. As a result, the concentration of the treatment liquid LQ can be made to reach the target value more quickly.
In the formula (1), "V" may indicate a flow rate of the exhaust GAs flowing through the flow path 275 of the exhaust pipe 273 when the process of heating the process liquid LQ to the normal boiling point or higher and the process of supplying the GAs GA to the process liquid LQ are performed.
Next, the gas supply unit 280 will be described with reference to fig. 2 and 3. Fig. 3 is a schematic plan view showing the gas supply unit 280. Further, in the gas supply unit 280 of fig. 2, a cross section along the line II-II of fig. 3 is shown.
As shown in fig. 3, the plurality of gas supply members 281 of the gas supply unit 280 are disposed substantially parallel to each other in the 1 st reservoir 210 and spaced apart from each other in the 2 nd direction D2. The 2 nd direction D2 is substantially orthogonal to the 1 st direction D1 and substantially parallel to the horizontal direction. The gas supply member 281 extends in the 1 st direction D1. In each of the plurality of gas supply members 281, the plurality of gas supply ports G are arranged substantially in a straight line at intervals in the 1 st direction D1. In each of the plurality of gas supply members 281, each gas supply port G is provided in an upper surface portion of the gas supply member 281. The GAs supply ports G supply the GAs GA to the processing liquid LQ upward, that is, toward the liquid surface of the processing liquid LQ. In this case, each GAs supply port G supplies the GAs GA to the processing liquid LQ as the bubbles BB.
The position of the GAs supply port G is not particularly limited as long as the GAs GA (specifically, the bubbles BB) can be supplied from the GAs supply port G to the processing liquid LQ. In each gas supply member 281, the plurality of gas supply ports G may be arranged at equal intervals or may be arranged at unequal intervals. Further, the posture of the gas supply member 281 is not particularly limited.
Each of the plurality of gas supply members 281 has a 1 st end portion 281a and a 2 nd end portion 281 b. The 1 st end 281a is one of both ends of the gas supply member 281 in the 1 st direction D1. The 2 nd end portion 281b is the other end portion of both end portions of the gas supply member 281 in the 1 st direction D1.
A 1 st pipe 283 is connected to the 1 st end 281a of the plurality of gas supply members 281. The 1 st pipe 283 extends in the 2 nd direction D2. The flow passage FW1 (fig. 2) of the 1 st pipe 283 communicates with the flow passage FW0 (fig. 2) of each gas supply member 281. The 1 st end 281a and the 1 st pipe 283 of each gas supply member 281 are held by a 1 st holding member 287. The 1 st holding member 287 has, for example, a substantially rectangular parallelepiped shape. The 1 st holding member 287 extends in the 2 nd direction D2.
The 2 nd end portions 281b of the plurality of gas supply members 281 are closed. The 2 nd end portion 281b of each gas supply member 281 is held by the 2 nd holding member 289. The 2 nd holding member 289 has, for example, a substantially rectangular parallelepiped shape. The 2 nd holding member 289 extends in the 2 nd direction D2. The 2 nd holding member 289 is substantially parallel with respect to the 1 st holding member 287.
By holding the 1 st end portion 281a and the 2 nd end portion 281b of the gas supply member 281 by the 1 st holding member 287 and the 2 nd holding member 289, respectively, deformation of the gas supply member 281 can be suppressed. Further, as shown in fig. 2 and 3, the 1 st holding member 287 is fixed to the bottom 230a of the 1 st reservoir 210 by a plurality of 1 st fixing members 291. The 2 nd holding member 289 is fixed to the bottom 230a of the 1 st reservoir 210 by a plurality of 2 nd fixing members 293.
Further, the lower end of the 2 nd pipe 285 is connected to the 1 st pipe 283. The 2 nd pipe 285 extends in the 3 rd direction D3. The 3 rd direction D3 is substantially orthogonal to the 1 st direction D1 and the 2 nd direction D2. The 3 rd direction D3 is substantially parallel to the vertical direction. The flow passage FW2 of the 2 nd pipe 285 communicates with the flow passage FW2 of the 1 st pipe 283.
Next, the gas supply mechanism 250 will be described with reference to fig. 2. The GAs supply mechanism 250 supplies the GAs GA supplied from the GAs supply source 263 from the pipe 261 to each GAs supply member 281 through the 2 nd pipe 285 and the 1 st pipe 283.
Specifically, the gas supply mechanism 250 includes a valve 251, a filter 253, a flow meter 257, and a regulating valve 259. The valve 251, the filter 253, the flow meter 257, and the adjustment valve 259 are arranged in the pipe 261 in this order from the downstream to the upstream of the pipe 261.
The adjustment valve 259 adjusts the opening degree of the pipe 261 to adjust the flow rate of the GAs GA supplied to each GAs supply member 281. The flow meter 257 measures the flow rate of the GAs GA flowing through the pipe 261. The adjustment valve 259 adjusts the flow rate of the gas based on the measurement result of the flow meter 257. Further, for example, a mass flow controller may be provided instead of the adjustment valve 259 and the flow meter 257.
The filter 253 removes foreign substances from the GAs GA flowing through the pipe 261. The valve 251 opens and closes the pipe 261. That is, the valve 251 switches between supply and stop of the GAs GA from the pipe 261 to the GAs supply member 281.
Next, a substrate processing method according to embodiment 1 of the present invention will be described with reference to fig. 1, 2, and 4. Fig. 4 is a flowchart showing a substrate processing method according to embodiment 1. As shown in fig. 4, the substrate processing method includes steps S1 to S10. The substrate processing method is performed by the substrate processing system 100. In the substrate processing method, a plurality of substrates W arranged at intervals are immersed in the processing liquid LQ stored in the processing bath 3 of the substrate processing unit 1, and the plurality of substrates W are processed by the processing liquid LQ. Step S1 to step S8 correspond to an example of the "treatment liquid temperature adjustment method".
As shown in fig. 1, 2, and 4, in step S1, the 1 st heater 216 of the 1 st temperature control unit 200 starts heating the treatment liquid LQ under the control of the control device U4. Specifically, the 1 st heater 216 heats the processing liquid LQ for processing the substrate W to a temperature equal to or higher than the normal boiling point of the processing liquid LQ.
Next, in step S2, the GAs supply unit 281 starts to supply the GAs GA (specifically, the bubbles BB) to the processing liquid LQ stored in the 1 st storage tank 210 by controlling the GAs supply mechanism 250 by the control unit U4. That is, each GAs supply member 281 supplies the GAs GA (specifically, the bubbles BB) promoting evaporation of moisture from the processing liquid LQ heated to the normal boiling point or higher by the 1 st heater 216 to the processing liquid LQ stored in the 1 st storage tank 210.
Next, in step S3, the exhaust GAs piping section 270 exhausts the water vapor and the GAs GA that come out from the liquid surface of the processing liquid LQ in the 1 st storage tank 210. That is, the exhaust pipe section 270 discharges the water vapor and the GAs GA from the 1 st storage tank 210. The exhaust GAs from the 1 st storage tank 210 is constantly exhausted by the exhaust GAs piping portion 270, and is not limited to the exhaust of the water vapor and the GAs GA.
Next, in step S4, control unit U4 determines whether the concentration of processing liquid LQ has reached the target value based on the measurement result of 1 st measuring unit 212.
When it is determined in step S4 that the concentration of the processing liquid LQ has not reached the target value, the process repeats step S4 until it is determined that the concentration of the processing liquid LQ has reached the target value.
On the other hand, when it is determined in step S4 that the concentration of the processing liquid LQ has reached the target value, the process advances to step S5.
In step S5, the controller U4 determines whether or not the supply time of the treatment liquid LQ from the 1 st tank 210 to the 2 nd tank 310 has come. The supply timing of the processing liquid LQ is, for example, when the amount of the processing liquid LQ in the 2 nd reservoir 310 becomes equal to or less than a predetermined value.
If it is determined in step S5 that the supply time has not come, the process repeats step S5 until it is determined that the supply time has come.
On the other hand, when it is determined in step S5 that the supply time has come, the process proceeds to step S6.
In step S6, the control device U4 controls the valves 214 and 220 to supply the processing liquid LQ to the 1 st storage tank 210 and the 2 nd storage tank 310. That is, the processing liquid LQ is supplied from the 1 st reservoir 210 to the 2 nd reservoir 310.
Next, in step S7, the 2 nd heater 316 adjusts the temperature of the treatment liquid LQ stored in the 2 nd storage tank 310 by the control of the control device U4, thereby indirectly maintaining the concentration of the treatment liquid LQ at the target value.
In step S8, the control unit U4 controls the valve 314 to supply the processing liquid LQ to the substrate processing unit 1 (specifically, the processing bath 3) from the 2 nd reservoir 310. That is, the processing liquid LQ is supplied from the 2 nd reservoir tank 310 to the substrate processing section 1 (specifically, the processing tank 3).
Here, the purpose of supplying the processing liquid LQ from the 2 nd reservoir tank 310 to the processing tank 3 is to: the silicon concentration in the processing liquid LQ stored in the processing tank 3 is suppressed from increasing due to the processing of the substrate W, and the silicon concentration is maintained at a target value in the processing tank 3. Therefore, for example, in the case where the amount of the treatment liquid LQ in the treatment tank 3 is not dependent on the liquid amount, the treatment liquid LQ in an amount necessary to maintain the silicon concentration at the target value based on the past actual results is continuously supplied from the 2 nd reservoir tank 310 to the treatment tank 3 to dilute the silicon concentration. The treatment liquid LQ stored in the 1 st storage tank 210 and the 2 nd storage tank 310 contains no silicon.
Further, for example, when there is a measuring device capable of continuously measuring the silicon concentration in the processing liquid LQ on the production line, the processing liquid LQ may be supplied from the 2 nd reservoir tank 310 to the processing tank 3 when the silicon concentration increases beyond a target value, and the supply of the processing liquid LQ may be stopped when the silicon concentration decreases to the target value, based on the measurement result of the measuring device.
Next, in step S9, the transport robot (not shown) transports the substrates W to a substrate holder (not shown) of the substrate processing section 1 under the control of the controller U4, and the substrate holder immerses the plurality of substrates W in the processing liquid LQ in the processing bath 3 to process the plurality of substrates W with the processing liquid LQ.
Next, in step S10, the substrate holder (not shown) of the substrate processing section 1 pulls out a plurality of substrates W from the processing liquid LQ in the processing bath 3 under the control of the controller U4, and the transfer robot (not shown) receives and transfers the substrates W from the substrate holder. The substrate processing method then ends.
As described above with reference to fig. 4, in the substrate processing method according to embodiment 1, the processing liquid LQ stored in the 1 st reservoir 210 is heated to the normal boiling point or higher, and the processing of supplying the GAs GA that promotes the evaporation of water to the processing liquid LQ stored in the 1 st reservoir 210 and the processing of discharging the water vapor and the GAs GA from the 1 st reservoir 210 are executed in parallel with this. Therefore, evaporation of moisture from the processing liquid LQ can be promoted, so that the concentration of the processing liquid LQ can quickly reach the target value.
(embodiment mode 2)
A substrate processing system 100A according to embodiment 2 of the present invention will be described with reference to fig. 5 and 6. The main differences between embodiment 2 and embodiment 1 are: the substrate processing section 1A of the substrate processing system 100A according to embodiment 2 is a piece-by-piece type that processes the substrates W one by one. Hereinafter, differences between embodiment 2 and embodiment 1 will be mainly described.
Fig. 5 is a schematic view showing a substrate processing system 100A according to embodiment 2. As shown in fig. 5, the substrate processing system 100A includes a processing apparatus U1A instead of the processing apparatus U1 shown in fig. 1. The processing apparatus U1A includes a plurality of substrate processing units 1A. Each of the plurality of substrate processing sections 1A includes a chamber 400, a nozzle 401, a spin chuck 402, a spin motor 403, and a cup 404.
The chamber 400 houses a nozzle 401, spin chuck 402, spin motor 403, and bowl 404. The spin motor 403 rotates the spin chuck 402 about a spin axis. As a result, the spin chuck 402 keeps the substrate W rotating horizontally about the rotation axis. The rotation axis is substantially parallel to the vertical direction. The nozzle 401 ejects the processing liquid LQ supplied from the processing liquid temperature controller U2 to the rotating substrate W. The bell cup 404 surrounds the spin chuck 402 in a circumferential direction relative to the axis of rotation. The bowl 404 receives the processing liquid LQ scattered from the substrate W and collects or discharges the processing liquid LQ.
The treatment liquid temperature control device U2 includes a plurality of flow meters 391 corresponding to the plurality of valves 314, respectively, and a plurality of flow rate adjustment valves 392 corresponding to the plurality of valves 314, respectively. The flow meter 391 and the flow rate adjustment valve 392 are disposed downstream of the valve 314 from the pipe P3.
The flow meter 391 detects the flow rate of the processing liquid LQ flowing through the pipe P3, and outputs a detection signal indicating the flow rate. The flow rate adjustment valve 392 adjusts the flow rate of the treatment liquid LQ flowing through the pipe P3. The valve 314 opens or closes the pipe P3, and switches between start and stop of supply of the processing liquid LQ to the nozzle 401.
The substrate processing system 100A of embodiment 2 includes the 1 st temperature control unit 200 in the same manner as the substrate processing system 100 of embodiment 1. Therefore, in embodiment 2, as in embodiment 1, the concentration of the treatment liquid LQ in the 1 st storage tank 210 can be quickly brought to a target value. The substrate processing system 100A according to embodiment 2 includes the 2 nd temperature control unit 300 in the same manner as the substrate processing system 100 according to embodiment 1. Therefore, in embodiment 2, as in embodiment 1, the flow rate of the treatment liquid LQ flowing through the 2 nd circulation pipe P9 can be appropriately controlled. Further, in embodiment 2, since the substrate processing system 100A includes a plurality of substrate processing units 1A (for example, 12 to 24), the amount of the processing liquid LQ used is large. However, in embodiment 2, since the concentration of the processing liquid LQ can be quickly brought to the target value as in embodiment 1, even when the substrate processing system 100A has a plurality of substrate processing units 1A, the processing liquid LQ having the concentration brought to the target value can be stably supplied from the 2 nd reservoir 310 to each substrate processing unit 1A at a desired flow rate. Except for this, the substrate processing system 100A of embodiment 2 has the same effects as the substrate processing system 100 of embodiment 1.
In fig. 5, the pipes P4, P5, P8, P10, valves 221, 222, 223, 224, 320, the 1 st measurement unit 212, and the 2 nd measurement unit 312 shown in fig. 1 are omitted for simplification of the drawing.
Next, a substrate processing method according to embodiment 2 of the present invention will be described with reference to fig. 6. Fig. 6 is a flowchart showing a substrate processing method according to embodiment 2. As shown in fig. 6, the substrate processing method includes steps S21 to S31. The substrate processing method is performed by the substrate processing system 100A. Then, the substrate processing method discharges the processing liquid LQ to the rotating substrate W to process the substrate W. Step S21 to step S29 correspond to an example of the "treatment liquid temperature adjustment method".
As shown in fig. 6, the processing of step S21 to step S27 is the same as the processing of step S1 to step S7 shown in fig. 4, and the description thereof is omitted.
Next, in step S28, the controller U4 determines whether or not the supply timing of the processing liquid LQ to any one of the substrate processing sections 1A (specifically, the nozzles 401) among the plurality of substrate processing sections 1A has come. The supply timing of the processing liquid LQ is, for example, the ejection timing of the processing liquid LQ from the nozzle 401 toward the substrate W.
If it is determined in step S28 that the supply time has not come, the process repeats step S28 until it is determined that the supply time has come.
On the other hand, when it is determined in step S28 that the supply time has come, the process proceeds to step S29.
In step S29, the control unit U4 controls the valve 314 to supply the processing liquid LQ to the substrate processing section 1A (specifically, the nozzle 401) from the 2 nd reservoir 310. That is, the processing liquid LQ is supplied from the 2 nd reservoir 310 to the substrate processing portion 1 (specifically, the nozzle 401).
Next, in step S30, the nozzle 401 of the substrate processing section 1 discharges the processing liquid LQ toward the rotating substrate W, and the substrate W is processed by the processing liquid LQ.
Specifically, the substrate W conveyed by a conveyance robot (not shown) is held by the spin chuck 402 before the processing liquid LQ is discharged from the nozzle 401 to the substrate W. The nozzle 40 discharges the processing liquid LQ toward the substrate W held and rotated by the spin chuck 402.
Next, in step S31, the transfer robot (not shown) carries the substrate W out of the chamber 400 of the substrate processing section 1A under the control of the controller U4. The substrate processing method then ends.
As described above with reference to fig. 6, in the substrate processing method according to embodiment 2, the processing liquid LQ stored in the 1 st reservoir 210 is heated to the normal boiling point or higher, and the processing of supplying the GAs GA that promotes the evaporation of water to the processing liquid LQ stored in the 1 st reservoir 210 and the processing of discharging the water vapor and the GAs GA from the 1 st reservoir 210 are executed in parallel with this. Therefore, evaporation of moisture from the processing liquid LQ can be promoted, so that the concentration of the processing liquid LQ can quickly reach the target value.
(embodiment mode 3)
A substrate processing system 100B according to embodiment 3 of the present invention will be described with reference to fig. 7 to 10. The main differences between embodiment 3 and embodiment 1 are: the substrate processing system 100B according to embodiment 3 heats the processing liquid LQ to a normal boiling point or higher in the processing bath 110. Hereinafter, differences between embodiment 3 and embodiment 1 will be mainly described.
First, the substrate processing system 100B will be described with reference to fig. 7. Fig. 7 is a schematic cross-sectional view showing a substrate processing system 100B of embodiment 3. The substrate processing system 100B is a batch type, and processes a plurality of substrates W all at once using the processing liquid LQ. The substrate processing system 100B corresponds to an example of "processing liquid temperature adjusting apparatus".
As shown in fig. 7, the substrate processing system 100B includes a processing bath 110, a substrate holding unit 120, a plurality of circulating processing liquid supply members 130, a circulating unit 140, a processing liquid supply unit 150, a diluent supply unit 160, a liquid discharge unit 170, a gas supply mechanism 250, a gas discharge pipe unit 270, a gas supply unit 280A, and a control unit U4. In embodiment 3, the processing bath 110 corresponds to a "substrate processing section".
The treatment tank 110 stores a treatment liquid LQ. The processing bath 110 immerses the plurality of substrates W in the processing liquid LQ to process the plurality of substrates W. The processing tank 110 is an example of the "1 st storage tank".
The substrate holder 120 holds a plurality of substrates W. The substrate holding part 120 includes a lifter. The substrate holder 120 immerses a plurality of substrates W arranged at intervals in the processing liquid LQ stored in the processing bath 110. The plurality of circulating processing liquid supply units 130 supply the processing liquid LQ to the processing bath 110. The circulation unit 140 circulates the processing liquid LQ stored in the processing bath 110 and supplies the processing liquid LQ to the circulating processing liquid supply units 130. The processing liquid supply unit 150 supplies the processing liquid LQ to the processing bath 110. The diluent supply unit 160 supplies the diluent to the processing bath 110. The liquid discharge unit 170 discharges the processing liquid LQ from the processing bath 110. The diluent is, for example, water. Otherwise, the diluent is the same as that of embodiment 1.
The GAs supply unit 280A supplies the GAs GA supplied from the GAs supply mechanism 250 to the processing liquid LQ in the processing bath 110. Specifically, the GAs supply unit 280A supplies the bubbles BB of the GAs GA to the processing liquid LQ in the processing bath 110. The GAs GA is, for example, an inert GAs. The GAs GA is, for example, a GAs that promotes evaporation of moisture from the processing liquid LQ heated to a normal boiling point or higher. Except for this, the GAs GA is the same as the GAs GA of embodiment 1.
The GAs supply mechanism 250 supplies the GAs GA to the GAs supply unit 280A. The exhaust piping section 270 exhausts the water vapor and the GAs GA from the processing bath 110. The controller U4 controls the respective components of the substrate processing system 100B. For example, the controller U4 controls the substrate holder 120, the circulation unit 140, the processing liquid supply unit 150, the diluent supply unit 160, the liquid discharge unit 170, and the gas supply mechanism 250.
Specifically, the processing bath 110 has a double bath structure including an inner bath 112 and an outer bath 114. The inner tank 112 and the outer tank 114 each have an upper opening that opens upward. The inner tank 112 is configured to store the processing liquid LQ and to accommodate a plurality of substrates W. The outer tank 114 is provided on the outer surface of the upper opening of the inner tank 112. The height of the upper edge of the outer groove 114 is higher than the height of the upper edge of the inner groove 112.
The processing tank 110 also has a lid 116. The cover 116 is openable and closable with respect to the upper opening of the inner tank 112. By closing the cover 116, the cover 116 can cover the upper opening of the inner tank 112.
The cover 116 has a split door portion 116a and a split door portion 116 b. The split door portion 116a is located on one side in the upper opening of the inner tank 112. The pair of opening/closing portions 116a are disposed near the upper edge of the inner tank 112 and can be opened/closed with respect to the upper opening of the inner tank 112. The split door 116b is located on the other side in the upper opening of the inner groove 112. The pair of opening/closing portions 116b are disposed near the upper edge of the inner tank 112 and can be opened/closed with respect to the upper opening of the inner tank 112. The inner tank 112 of the processing tank 110 can be covered by closing the pair of opening/ closing parts 116a and 116b to cover the upper opening of the inner tank 112.
The substrate holder 120 moves vertically upward or vertically downward while holding a plurality of substrates W. The plurality of substrates W held by the substrate holding portion 120 are immersed in the processing liquid LQ stored in the inner tank 112 by the substrate holding portion 120 moving vertically downward.
The substrate holder 120 includes a main body plate 122 and a holding rod 124. The main body plate 122 is a plate extending in the vertical direction (Z direction). The holding bar 124 extends in the horizontal direction (Y direction) from one main surface of the main body plate 122. In the example of fig. 7, 3 holding rods 124 extend horizontally from one main surface of the main body plate 122. The plurality of substrates W are arranged at intervals, and held in a standing posture (vertical posture) by the plurality of holding rods 124 abutting against the lower edge of each substrate W.
The substrate holder 120 may further include a lifting unit 126. The lifting unit 126 lifts and lowers the main body plate 122 between a processing position (position shown in fig. 8 b) where the plurality of substrates W held by the substrate holding portion 120 are positioned inside the inner tank 112 and a retracted position (position shown in fig. 8 a) where the plurality of substrates W held by the substrate holding portion 120 are positioned above the inner tank 112. Therefore, the plurality of substrates W held by the holding rods 124 are immersed in the processing liquid LQ by moving the main body plate 122 to the processing position by the lift unit 126. Thereby, the plurality of substrates W are processed.
The plurality of circulating processing liquid supply units 130 supply the processing liquid LQ to the inner tank 112 of the processing tank 110. The plurality of circulating treatment liquid supply members 130 are disposed inside the inner tank 112 of the treatment tank 110 at the bottom 110a of the inner tank 112. Each of the plurality of circulating treatment liquid supply members 130 has a substantially cylindrical shape. The plurality of circulating treatment liquid supply units 130 are each a pipe, for example.
Specifically, each of the circulating treatment liquid supply members 130 has a plurality of treatment liquid discharge ports P. In fig. 7, only 1 treatment liquid ejection port P is shown for 1 circulating treatment liquid supply unit 130. The plurality of circulating treatment liquid supply units 130 supply the treatment liquid LQ to the inner tank 112 from the plurality of treatment liquid ejection ports P, respectively. In fig. 7, the treatment liquid discharge port P is directed obliquely upward, but the present invention is not limited thereto, and the treatment liquid discharge port P may be directed downward or sideward.
The circulation unit 140 includes a pipe 141, a pump 142, a heater 143, a filter 144, an adjustment valve 145, a valve 146, and a measurement unit 147. The pump 142, the heater 143, the filter 144, the regulating valve 145, and the valve 146 are arranged in this order from the upstream side to the downstream side of the pipe 141. The heater 143 corresponds to an example of the "1 st temperature adjustment unit".
The pipe 141 reintroduces the processing liquid LQ sent from the processing bath 110 into the processing bath 110. Specifically, the upstream end of the pipe 141 is connected to the outer tank 114. Therefore, the pipe 141 introduces the processing liquid LQ from the outer tank 114 to the circulating processing liquid supply unit 130. A plurality of circulating treatment liquid supply units 130 are connected to the downstream end of the pipe 141.
The pump 142 delivers the processing liquid LQ from the pipe 141 to the plurality of circulating processing liquid supply units 130. Therefore, the circulating treatment liquid supply unit 130 supplies the treatment liquid LQ supplied from the pipe 141 to the treatment tank 110. The filter 144 filters the processing liquid LQ flowing through the pipe 141.
The heater 143 raises the temperature of the processing liquid LQ flowing through the pipe 141. That is, the heater 143 adjusts the temperature of the processing liquid LQ.
Specifically, while the substrate W is being processed by immersing the substrate W in the processing liquid LQ, the heater 143 maintains the temperature of the processing liquid LQ at a predetermined temperature (hereinafter, "predetermined temperature TM") lower than the normal boiling point of the processing liquid LQ. The specified temperature TM may also have a fixed range.
When the concentration of the processing liquid LQ is to be set to a target value while the substrate W is not immersed in the processing liquid LQ, the heater 143 raises the temperature of the processing liquid LQ to a temperature equal to or higher than the normal boiling point of the processing liquid LQ.
Specifically, while the substrate W is not immersed in the treatment liquid LQ, the heater 143 heats the treatment liquid LQ supplied to the treatment bath 110 and used for treating the substrate W to a temperature equal to or higher than the normal boiling point of the treatment liquid LQ. That is, while the substrate W is not immersed in the treatment liquid LQ, the heater 143 heats the treatment liquid LQ flowing through the pipe 141 to a temperature equal to or higher than the normal boiling point of the treatment liquid LQ. Further, the substrate processing system 100B replenishes the processing bath 110 with the diluent from the diluent supply source TKB in accordance with the control conditions in the processing bath 110 while bringing the concentration of the processing liquid LQ to the target value.
The normal boiling point of the processing liquid LQ is a boiling point at a concentration of the processing liquid LQ resupplied from the processing liquid supply source TKA to the processing tank 110 instead of the pipe 141.
Otherwise, the heater 143 operates in the same manner as the 1 st heater 216 of embodiment 1 while the substrate W is not immersed in the processing liquid LQ.
The adjustment valve 145 adjusts the opening degree of the pipe 141 to adjust the flow rate of the processing liquid LQ supplied to the circulating processing liquid supply unit 130. The valve 146 opens and closes the pipe 141.
The measurement unit 147 measures a physical quantity indicating the concentration of the processing liquid LQ flowing through the pipe 141. The definition of the physical quantity indicating the concentration of the treatment liquid LQ is the same as that in embodiment 1. Therefore, the measurement section 147 is a densitometer or a densitometer. The measuring unit 147 may measure a physical quantity indicating the concentration of the processing liquid LQ stored in the processing tank 110 (the inner tank 112 or the outer tank 114). The concentration and temperature of the processing liquid LQ flowing through the pipe 141 are substantially the same as those of the processing liquid LQ stored in the processing tank 110, respectively.
The processing liquid supply unit 150 includes a nozzle 152, a pipe 154, and a valve 156. The nozzle 152 discharges the processing liquid LQ to the outer tank 114. The nozzle 152 is connected to a pipe 154. The pipe 154 is supplied with the processing liquid LQ from the processing liquid supply source TKA. A valve 156 is disposed in the pipe 154.
When the valve 156 is opened, the processing liquid LQ discharged from the nozzle 152 is supplied into the outer tank 114. Then, the processing liquid LQ is supplied from the outer tank 114 to the inner tank 112 through the pipe 141 by the circulating processing liquid supply member 130.
The diluent supply unit 160 includes a nozzle 162, a pipe 164, and a valve 166. The nozzle 162 ejects the diluent to the outer tank 114. The nozzle 162 is connected to a pipe 164. The diluent from the diluent supply source TKB is supplied to the pipe 164. A valve 166 is disposed in the pipe 164. When the valve 166 is opened, the diluent ejected from the nozzle 162 is supplied into the outer tank 114.
For example, the control device U4 may open the valve 166 based on the measurement result of the measurement unit 147 to supply the diluent from the diluent supply source TKB to the processing bath 110 so that the concentration of the processing liquid LQ becomes a target value.
The liquid discharge unit 170 includes a liquid discharge pipe 170a and a valve 170 b. A drain pipe 170a is connected to the bottom wall of the inner tank 112 of the processing tank 110. A valve 170b is disposed in the drain pipe 170 a. When the valve 170b is opened, the processing liquid LQ stored in the inner tank 112 is discharged to the outside through the drain pipe 170 a. The discharged treatment liquid LQ is sent to a liquid discharge treatment device (not shown) and treated.
The gas supply unit 280A is disposed inside the processing bath 110. Specifically, the gas supply unit 280A includes at least 1 gas supply member 180 and at least 1 support member 185. In embodiment 3, the gas supply unit 280A includes a plurality of gas supply members 180 and a plurality of support members 185.
The plurality of gas supply members 180 and the plurality of support members 185 are disposed inside the processing bath 110. Specifically, the plurality of gas supply members 180 are disposed in the bottom 110a of the processing bath 110 inside the processing bath 110. Specifically, the plurality of gas supply members 180 are disposed in the inner tank 112 of the processing tank 110. Specifically, the plurality of gas supply members 180 are disposed at the bottom 110a of the inner tank 112 inside the inner tank 112.
The plurality of gas supply members 180 are each supported by a corresponding support member 185. Specifically, each of the plurality of gas supply members 180 is fixed by a corresponding support member 185. Therefore, deformation of the gas supply member 180 can be suppressed. The plurality of support members 185 are fixed to the bottom 110a of the processing bath 110. Specifically, the plurality of support members 185 are fixed to the bottom 110a of the inner tank 112.
Each of the plurality of gas supply members 180 has a substantially cylindrical shape. Each gas supply member 180 is, for example, a pipe. The material of the gas supply member 180 is, for example, quartz or resin. Each of the plurality of gas supply members 180 has a flow passage FW 0.
The GAs supply mechanism 250 supplies the GAs GA supplied from the GAs supply source 263 to each GAs supply member 180 through the pipe 261. Except for this point, the configuration of the gas supply mechanism 250 is the same as that of the gas supply mechanism 250 of embodiment 1.
The GAs supply unit 180 supplies a GAs GA to the processing liquid LQ stored in the processing tank 110 (specifically, the inner tank 112). Specifically, the GAs supply unit 180 supplies the GAs GA to the processing liquid LQ upward, that is, toward the liquid surface of the processing liquid LQ. In this case, the GAs supply member 180 supplies the GAs GA to the processing liquid LQ in the form of the bubbles BB. The gas supply member 180 is, for example, a bubbler.
Specifically, while the substrate W is being processed by immersing the substrate W in the processing liquid LQ, the gas supply unit 180 supplies a gas to the processing liquid LQ stored in the processing tank 110 and having a predetermined temperature TM lower than the normal boiling point.
In addition, when the concentration of the processing liquid LQ is to be set to a target value while the substrate W is not immersed in the processing liquid LQ, the GAs supply unit 180 supplies the GAs GA to the processing liquid LQ stored in the processing tank 110 and heated to a normal boiling point or higher.
Each of the plurality of gas supply members 180 further includes a plurality of gas supply ports G. In fig. 7, only 1 gas supply port G is shown for 1 gas supply member 180. Specifically, each of the plurality of gas supply members 180 has a substantially cylindrical protrusion 182. The projection 182 is provided with a gas supply port G.
While the substrate W is being processed by immersing the substrate W in the processing liquid LQ, the GAs supply member 180 supplies the GAs GA from the plurality of GAs supply ports G toward the processing liquid LQ stored in the processing tank 110 (specifically, the inner tank 112) and maintained at a predetermined temperature TM lower than the normal boiling point.
When the concentration of the processing liquid LQ is to be set to a target value while the substrate W is not immersed in the processing liquid LQ, the GAs supply member 180 supplies the GAs GA from the plurality of GAs supply ports G toward the processing liquid LQ stored in the processing tank 110 (specifically, the inner tank 112) and heated to a boiling point equal to or higher than the normal boiling point. Specifically, in this case, the GAs supply member 180 supplies the GAs GA as the plurality of bubbles BB from the plurality of GAs supply ports G toward the processing liquid LQ stored in the processing tank 110 (specifically, the inner tank 112) and heated to the normal boiling point or higher.
Except for this, the configuration and operation of the gas supply member 180 and the gas supply port G are the same as those of the gas supply member 281 and the gas supply port G in embodiment 1.
The exhaust pipe 270 is connected to the upper part of the treatment tank 110. In the example of fig. 7, the exhaust pipe section 270 is connected to the cover 116. While the substrate W is being processed by being immersed in the processing liquid LQ, the exhaust pipe section 270 exhausts gas from the processing bath 110.
When the concentration of the processing liquid LQ is to be set to a target value while the substrate W is not immersed in the processing liquid LQ, the exhaust pipe section 270 discharges water vapor and gas from the processing bath 110 (specifically, the inner bath 112). The discharged GAs is the GAs GA supplied from the GAs supply unit 180 into the processing liquid LQ and coming out from the liquid surface of the processing liquid LQ. The water vapor in the exhaust gas is generated by evaporation of water contained in the processing liquid LQ heated to a normal boiling point or higher, and comes out from the liquid surface of the processing liquid LQ. The exhaust pipe portion 270 includes a connecting member 271 and an exhaust pipe 273. Except for this, the configuration of the exhaust pipe section 270 is the same as that of the exhaust pipe section 270 of embodiment 1.
The controller U4 controls the lift unit 126, the valve 146, the regulating valve 145, the heater 143, the pump 142, the valve 156, the valve 166, the valve 170b, and the gas supply mechanism 250.
As described above with reference to fig. 7, according to embodiment 3, while the substrate W is not immersed in the processing liquid LQ, the GAs supply unit 180 supplies the GAs GA that promotes evaporation of water to the processing liquid LQ heated to the normal boiling point or higher by the heater 143. Thereby, evaporation of water in the processing liquid LQ is promoted. As a result, the concentration of the processing liquid LQ can be made to reach the target value in the processing bath 110 more quickly than in the case where the GAs GA is not supplied.
In embodiment 3, the GAs supply member 180 supplies the bubbles BB of the GAs GA to the processing liquid LQ in the processing bath 110 while the substrate W is not immersed in the processing liquid LQ. Therefore, as in embodiment 1, the evaporation of the water in the processing liquid LQ can be further promoted by the air bubbles BB rising toward the liquid surface of the processing liquid LQ. Except for this, embodiment 3 has the same effect as embodiment 1.
In embodiment 3, the treatment liquid LQ is preferably a "liquid containing phosphoric acid". This aspect is the same as embodiment 1.
In particular, in embodiment 3, it is preferable that the heater 143 discharges a part or all of the processing liquid LQ stored in the processing bath 110 while the substrate W is not immersed in the processing liquid LQ, and after replacing a part or all of the processing liquid LQ with a new processing liquid LQ, heats the processing liquid LQ to a normal boiling point or higher. The new processing liquid LQ is different from the processing liquid supplied from the processing liquid supply source TKA and supplied from the pipe 141. It is preferable that each of the gas supply members 180 supplies the gas to the processing liquid LQ stored in the processing bath 110 after a part or all of the processing liquid LQ stored in the processing bath 110 is discharged and a part or all of the processing liquid LQ is replaced with a new processing liquid LQ while the substrate W is not immersed in the processing liquid LQ.
In these preferred examples, the concentration of the processing liquid LQ can be quickly brought to the target value after a part or all of the processing liquid LQ stored in the processing tank 110 is discharged and a part or all of the processing liquid LQ is replaced with a new processing liquid LQ. As a result, the operation rate of the substrate processing system 100B can be improved.
For example, when the concentration of a specific component (e.g., silicon) in the processing liquid LQ in the processing tank 110 is reduced, a part of the processing liquid LQ stored in the processing tank 110 is discharged, and a part of the processing liquid LQ is replaced with a new processing liquid LQ.
For example, when the processing bath 110 is cleaned, all of the processing liquid LQ stored in the processing bath 110 is discharged, and all of the processing liquid LQ is replaced with a new processing liquid LQ.
In embodiment 3, while the substrate W is immersed in the processing liquid LQ and processed, the GAs supply members 180 each blow the GAs GA from the plurality of GAs supply ports G toward the processing liquid LQ, thereby supplying the plurality of bubbles BB from the plurality of GAs supply ports G toward the plurality of substrates W immersed in the processing liquid LQ. Therefore, the processing liquid LQ in contact with the surface of each substrate W can be effectively replaced with fresh processing liquid LQ by the large amount of bubbles BB. As a result, when the surface pattern including the concave portion is formed on the surface of the substrate W, the processing liquid LQ in the concave portion can be effectively replaced with fresh processing liquid LQ by the diffusion phenomenon. This makes it possible to effectively perform the treatment from a shallow position to a deep position on the wall surface in the recess of the surface pattern by the treatment liquid LQ.
Next, a substrate processing system 100B before and after immersing the substrate W in the processing bath 110 will be described with reference to fig. 8. Fig. 8(a) and 8(B) are schematic perspective views of the substrate processing system 100B before and after the substrate W is placed in the processing bath 110. In fig. 8, the processing liquid LQ in the lid 116 and the processing bath 110 shown in fig. 7 is omitted to avoid the complicated drawing.
As shown in fig. 8(a), the substrate holding portion 120 holds a plurality of substrates W. The plurality of substrates W are arranged in a row along the 1 st direction D10(Y direction). In other words, the 1 st direction D10 represents the arrangement direction of the plurality of substrates W. The 1 st direction D10 is substantially parallel to the horizontal direction. In addition, each of the plurality of substrates W is substantially parallel to the 2 nd direction D20. The 2 nd direction D20 is substantially orthogonal to the 1 st direction D10 and substantially parallel to the horizontal direction.
In fig. 8(a), the substrate holder 120 is positioned above the inner tank 112 of the processing tank 110. The substrate holder 120 holds a plurality of substrates W and moves down vertically (Z direction). Thereby, a plurality of substrates W are placed in the processing bath 110.
As shown in fig. 8(b), when the substrate holder 120 is lowered into the processing bath 110, the plurality of substrates W are immersed in the processing liquid LQ in the processing bath 110. Although not shown in fig. 8(b), as shown in fig. 7, the upper opening of the inner tank 112 is covered with a cover 116.
Next, the gas supply unit 280A will be described with reference to fig. 9. Fig. 9 is a schematic plan view showing the gas supply unit 280A. As shown in fig. 9, the gas supply member 180 and the circulating treatment liquid supply member 130 of the gas supply unit 280A are arranged substantially parallel to each other in a plan view with a gap therebetween. One of the 2 circulating process liquid supply members 130 is disposed between the 2 gas supply members 180 in a plan view. In addition, in a plan view, the other of the 2 circulating treatment liquid supply members 130 is disposed between the other 2 gas supply members 180. Further, the middle 2 gas supply members 180 among the 4 gas supply members 180 face in the 2 nd direction D20 in a plan view.
Specifically, the circulating treatment liquid supply members 130 are arranged substantially parallel to each other in the treatment tank 110 (specifically, the inner tank 112) and spaced apart from each other in the 2 nd direction D20. The circulating treatment liquid supply member 130 extends in the 1 st direction D10. In each of the circulating treatment liquid supply members 130, the treatment liquid ejection ports P are arranged substantially in a straight line at intervals in the 1 st direction D10.
The plurality of gas supply members 180 are substantially parallel to each other in the processing bath 110 (specifically, the inner bath 112), and are arranged at intervals in the 2 nd direction D20. The gas supply member 180 extends in the 1 st direction D10. In each of the plurality of gas supply members 180, the plurality of gas supply ports G are arranged substantially in a straight line at intervals in the 1 st direction D10. In each of the plurality of gas supply members 180, each gas supply port G is provided in an upper surface portion of the gas supply member 180. Each gas supply port G supplies air bubbles BB upward at the bottom 110a of the processing bath 110 (specifically, the inner bath 112). Further, the position of the gas supply port G is not particularly limited as long as the bubbles BB can be supplied from the gas supply port G. In the plurality of gas supply members 180, the plurality of gas supply ports G may be arranged at equal intervals or may be arranged at unequal intervals.
Each of the plurality of gas supply members 180 has a 1 st end portion 180a and a 2 nd end portion 180 b. The 1 st end 180a is one of both ends of the gas supply member 180 in the 1 st direction D10. The 2 nd end portion 180b is the other of the two end portions of the gas supply member 180 in the 1 st direction D10.
The 1 st end 180a is connected to a pipe 261. Therefore, the GAs supply mechanism 250 supplies the GAs GA supplied from the GAs supply source 263 to each GAs supply member 180 through the pipe 261. The 2 nd end 180b is closed. Except for this point, the configuration of the gas supply member 180 is the same as that of the gas supply member 281 of embodiment 1.
The plurality of support members 185 are substantially parallel to each other in the processing bath 110 (specifically, the inner bath 112) and are disposed at intervals in the 2 nd direction D20. The support member 185 extends in the 1 st direction D10. The support member 185 has a substantially flat plate shape in the example of fig. 9. The support member 185 at one end of the gas supply unit 280A in the 2 nd direction D20 supports 1 gas supply member 180, and the support member 185 at the other end supports 1 gas supply member 180. The middle support member 185 supports 2 gas supply members 180.
Next, a substrate processing method according to embodiment 3 of the present invention will be described with reference to fig. 8 and 10. Fig. 10 is a flowchart showing a substrate processing method according to embodiment 31. As shown in fig. 10, the substrate processing method includes steps S41 to S51. The substrate processing method is performed by the substrate processing system 100B. In the substrate processing method, a plurality of substrates W arranged at intervals are immersed in the processing liquid LQ stored in the processing bath 110, and the plurality of substrates W are processed by the processing liquid LQ. Step S41 to step S47 correspond to an example of the "treatment liquid temperature adjustment method".
As shown in fig. 8 and 10, in step S41, control device U4 determines whether or not the temperature adjustment time has come. The temperature control time is a time after the substrate W is not immersed in the treatment liquid LQ, and a part or all of the treatment liquid LQ stored in the treatment tank 110 is discharged and replaced with a new treatment liquid LQ.
If it is determined in step S41 that the temperature adjustment time has not come, the process repeats step S41 until it is determined that the temperature adjustment time has come.
On the other hand, if it is determined in step S41 that the temperature adjustment time has come, the process proceeds to step S42.
In step S42, the heater 143 starts heating the processing liquid LQ by the control of the control device U4. Specifically, the heater 143 heats the processing liquid LQ for processing the substrate W to a temperature equal to or higher than the normal boiling point of the processing liquid LQ.
Next, in step S43, the GAs supply means 180 starts to supply the GAs GA (specifically, the bubbles BB) to the processing liquid LQ stored in the processing bath 110 by controlling the GAs supply mechanism 250 by the control device U4. That is, each GAs supply member 180 supplies the GAs GA (specifically, the bubbles BB) that promotes evaporation of moisture from the processing liquid LQ heated to the normal boiling point or higher to the processing liquid LQ stored in the processing tank 110.
Next, in step S44, the exhaust GAs piping section 270 exhausts the water vapor and the GAs GA that come out from the liquid surface of the processing liquid LQ in the processing tank 110. That is, the exhaust pipe section 270 exhausts the water vapor and the GAs GA from the processing bath 110. The exhaust GAs from the processing bath 110 is always continuously discharged from the exhaust GAs pipe portion 270, and is not limited to the discharge of the water vapor and the GAs GA.
Next, in step S45, the control unit U4 determines whether the concentration of the processing liquid LQ has reached the target value based on the measurement result of the measurement unit 147.
When it is determined in step S45 that the concentration of the processing liquid LQ has not reached the target value, the process repeats step S45 until it is determined that the concentration of the processing liquid LQ has reached the target value.
On the other hand, when it is determined in step S45 that the concentration of the processing liquid LQ has reached the target value, the process advances to step S46.
In step S46, the heater 143 indirectly maintains the concentration of the treatment liquid LQ at a target value by adjusting the temperature of the treatment liquid LQ stored in the treatment tank 110 by the control of the control device U4. That is, the heater 143 indirectly maintains the concentration of the processing liquid LQ at a target value by adjusting the temperature of the processing liquid LQ flowing through the pipe 141. Specifically, the heater 143 maintains the temperature of the treatment liquid LQ at a predetermined temperature equal to or higher than the normal boiling point. Then, in a state where the temperature of the processing liquid LQ is maintained at a predetermined temperature equal to or higher than the normal boiling point, the diluent is supplied from the diluent supply source TKB to the processing bath 110 through the valve 166, the pipe 164, and the nozzle 162 based on the measurement result of the measurement unit 147, whereby the concentration of the processing liquid LQ is maintained at the target value.
Next, in step S47, the GAs supply means 180 stops supplying the GAs GA (specifically, the bubbles BB) to the processing liquid LQ stored in the processing tank 110 by controlling the GAs supply mechanism 250 using the control device U4.
Next, in step S48, the controller U4 determines whether or not the substrate immersion time has come in any of the plurality of processing tanks 110. The substrate immersion time is a time when the substrate W is immersed in the processing liquid LQ.
When it is determined in step S48 that the substrate immersion time has not come, the process repeats step S48 until it is determined that the substrate immersion time has come.
On the other hand, when it is determined in step S48 that the substrate dipping time has come, the process proceeds to step S49.
In step S49, the substrate W is carried by the carrier robot (not shown) to the substrate holder 120 under the control of the controller U4, and the substrate holder 120 immerses the plurality of substrates W in the processing liquid LQ in the processing bath 110 to process the plurality of substrates W with the processing liquid LQ.
Next, in step S50, the GAs supply units 180 supply the GAs GA (specifically, the bubbles BB) to the plurality of substrates W immersed in the processing liquid LQ in the processing bath 110 by controlling the GAs supply mechanism 250 with the control device U4.
Next, in step S51, the substrate holder 120 pulls out a plurality of substrates W from the processing liquid LQ in the processing bath 110 under the control of the controller U4, and the transport robot (not shown) receives and transports the substrates W from the substrate holder 120. The substrate processing method then ends.
As described above with reference to fig. 10, in the substrate processing method according to embodiment 3, the processing of supplying the GAs GA that promotes the evaporation of water to the processing liquid LQ stored in the processing tank 110 and the processing of discharging the water vapor and the GAs GA from the processing tank 110 are performed in parallel with the heating of the processing liquid LQ stored in the processing tank 110 to the normal boiling point or higher. Therefore, evaporation of water from the processing liquid LQ can be promoted, and the concentration of the processing liquid LQ can be quickly brought to a target value.
The present invention will be specifically described below based on examples, but the present invention is not limited to the following examples.
[ examples ]
Examples 1 and 2 and comparative examples of the present invention will be described with reference to fig. 7 and 11. In example 1 and example 2, the substrate processing system 100B described with reference to fig. 7 was used. In the comparative example, the substrate processing system 100B described with reference to fig. 7 is used with restrictions.
In example 1, example 2, and comparative example, the treatment liquid LQ was heated to a normal boiling point or higher by the heater 143. The treatment liquid LQ is an aqueous phosphoric acid solution. The lid 116 of the processing tank 110 is closed.
In example 1, the flow rate of the GAs GA supplied from the GAs supply mechanism 250 to the 4 GAs supply members 180, that is, the flow rate of the GAs GA supplied to the processing liquid LQ heated to a temperature equal to or higher than the standard boiling point was 13 liters/minute. GAs GA is nitrogen.
In example 2, the flow rate of the GAs GA supplied from the GAs supply mechanism 250 to the 4 GAs supply members 180, that is, the flow rate of the GAs GA supplied to the processing liquid LQ heated to a temperature equal to or higher than the standard boiling point was 20 liters/minute. GAs GA is nitrogen.
In the comparative example, the GAs GA was not supplied to the processing liquid LQ heated to a temperature equal to or higher than the normal boiling point.
In examples 1 and 2 and comparative examples, pure water was continuously supplied at a flow rate of 0.3 l/min from the diluent supply unit 160. Then, the specific gravity of the treatment liquid LQ is measured by the measuring unit 147. The measuring unit 147 measures the specific gravity of the processing liquid LQ in the inner tank 112 without measuring the specific gravity of the processing liquid LQ circulating in the pipe 141. Based on the measurement results of specific gravity, pure water evaporation ability was confirmed in examples 1 and 2 and comparative examples. The pure water evaporation ability is an ability to evaporate moisture of pure water from the processing liquid LQ. Since pure water is supplemented at a fixed flow rate, it can be presumed that the specific gravity of the treatment liquid LQ remains fixed if the pure water evaporation capacity is high, and does not remain fixed if the pure water evaporation capacity is low.
Fig. 11 is a graph showing the temporal change in specific gravity value of the treatment liquid LQ in example 1 and example 2 of the present invention and the comparative example. In fig. 11, the horizontal axis represents time, and the vertical axis represents specific gravity.
As shown in fig. 11, a curve PL1 represents the specific gravity value of the processing liquid LQ measured in example 1. The curve PL2 represents the specific gravity value of the treatment liquid LQ measured in example 2. The curve PL3 represents the specific gravity value of the processing liquid LQ measured in the comparative example.
In the comparative example, as shown by the curve PL3, the specific gravity value of the treatment liquid LQ constantly decreases, and the temperature adjustment operation by the heater 143 is stopped at the time t0 of several tens of minutes from the start of the pure water replenishment. The reason for this is presumed as follows. That is, in the comparative example, since the pure water evaporation capacity is low, the concentration of the treatment liquid LQ becomes low, and the boiling point of the treatment liquid LQ becomes low. As a result, the treatment liquid LQ boils explosively, a large amount of water vapor is generated, and the heater 143 is overheated. This stops the temperature control operation by the heater 143.
On the other hand, in examples 1 and 2, although the pure water was continuously supplied, the specific gravity value of the treatment liquid LQ was almost stable and substantially constant in the vicinity of boiling after time t 0. Therefore, it was confirmed that the pure water evaporation capacity was higher in examples 1 and 2 than in comparative examples. That is, it was confirmed that the pure water evaporation ability was improved by supplying the GAs GA to the processing liquid LQ heated to a temperature equal to or higher than the normal boiling point. It is presumed that in examples 1 and 2, the pure water evaporation ability is improved, and therefore the concentration of the treatment liquid LQ can be brought to the target value more quickly than in the comparative example.
In particular, in example 2 in which the flow rate of the GAs GA was large, the specific gravity value of the treatment liquid LQ was more stable than that in example 1.
The embodiments and examples of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above-described embodiments and examples, and can be implemented in various forms without departing from the spirit and scope thereof. In addition, a plurality of constituent elements disclosed in the above embodiments may be appropriately changed. For example, one of all the components described in one embodiment may be added to the components described in another embodiment, or some of all the components described in one embodiment may be omitted from the embodiments.
In addition, the drawings schematically show the respective components in the main body for the convenience of understanding the present invention, and the thickness, length, number, interval, and the like of the illustrated components may be different from those of the actual drawings for the convenience of manufacturing the drawings. It is to be understood that the configuration of each component shown in the above embodiments is not particularly limited, and various modifications may be made without substantially departing from the effect of the present invention.
[ industrial applicability ]
The present invention relates to a processing liquid temperature adjusting method, a substrate processing method, a processing liquid temperature adjusting apparatus, and a substrate processing system, and has industrial applicability.
[ description of symbols ]
1,1A substrate processing part
100,100A substrate processing system
100B substrate processing system (processing liquid temperature regulator)
110 treating tank (No. 1 storage tank)
180,281 gas supply unit
143 heater (1 st temperature adjusting part)
216 th heater (1 st temperature adjusting part)
210 st storage tank
270 exhaust pipe section
273 exhaust piping
316 nd 2 nd heater (2 nd temperature adjusting part)
310 nd storage tank
U2 treatment fluid attemperator
And (5) a W substrate.
Claims (16)
1. A treatment liquid temperature adjusting method comprises the following steps:
heating a processing liquid used to process a substrate to above a normal boiling point of the processing liquid;
supplying a gas for promoting evaporation of water from the heated treatment liquid to the treatment liquid stored in the 1 st storage tank; and
discharging water vapor and the gas from the 1 st storage tank; and is
The treatment liquid is a liquid containing phosphoric acid.
2. The treatment liquid temperature adjusting method according to claim 1, further comprising the steps of: the processing liquid is supplied from the 1 st reservoir tank directly or indirectly to a substrate processing section that processes the substrate.
3. The treatment liquid temperature adjusting method according to claim 2, further comprising the steps of:
supplying the treatment liquid from the 1 st storage tank to the 2 nd storage tank after the concentration of the treatment liquid stored in the 1 st storage tank reaches a target value; and
adjusting the temperature of the treatment solution stored in the 2 nd storage tank so that the concentration of the treatment solution is maintained at the target value; and is
In the step of supplying the processing liquid, the processing liquid is supplied from the 2 nd reservoir tank to the substrate processing portion.
4. The treatment liquid temperature adjusting method according to claim 1, wherein
The 1 st storage tank is a processing tank for processing the substrate by immersing the substrate in the processing liquid,
the step of heating the processing liquid and the step of supplying the gas are performed while the substrate is not immersed in the processing liquid.
5. The method for controlling temperature of a processing liquid according to claim 4, wherein the step of heating the processing liquid and the step of supplying the gas are performed after a part or all of the processing liquid stored in the 1 st storage tank is discharged and a part or all of the processing liquid is replaced with a new processing liquid.
6. A substrate processing method comprises
The method for adjusting the temperature of a treatment liquid according to any one of claims 1 to 5, and
and processing the substrate with the processing liquid.
7. A treatment liquid temperature adjusting method comprises the following steps:
heating a processing liquid used to process a substrate to above a normal boiling point of the processing liquid;
supplying a gas for promoting evaporation of water from the heated treatment liquid to the treatment liquid stored in the 1 st storage tank;
discharging water vapor and the gas from the 1 st storage tank;
supplying the treatment liquid from the 1 st storage tank to the 2 nd storage tank after the concentration of the treatment liquid stored in the 1 st storage tank reaches a target value;
adjusting the temperature of the treatment solution stored in the 2 nd storage tank so that the concentration of the treatment solution is maintained at the target value; and
the processing liquid is supplied from the 2 nd reservoir tank to a substrate processing section that processes the substrate.
8. A treatment liquid temperature control device is provided with:
a 1 st temperature adjusting unit for heating a processing liquid for processing a substrate to a temperature equal to or higher than a normal boiling point of the processing liquid;
a 1 st storage tank for storing the treatment liquid heated by the 1 st temperature control unit;
a gas supply unit configured to supply a gas for promoting evaporation of moisture from the processing liquid stored in the 1 st storage tank to the processing liquid; and
a gas discharge piping section for discharging the vapor and the gas from the 1 st storage tank; and is
The treatment liquid is a liquid containing phosphoric acid.
9. The process liquid temperature regulating device according to claim 8, wherein the 1 st reservoir tank directly or indirectly supplies the process liquid to a substrate processing part that processes the substrate.
10. The treatment liquid temperature adjustment device according to claim 9, further comprising:
a 2 nd storage tank to which the treatment liquid is supplied from the 1 st storage tank after the concentration of the treatment liquid stored in the 1 st storage tank reaches a target value; and
a 2 nd temperature control unit configured to control the temperature of the treatment liquid stored in the 2 nd storage tank so that the concentration of the treatment liquid is maintained at the target value; and is
The 2 nd reservoir tank supplies the processing liquid to the substrate processing section.
11. The treatment liquid temperature adjusting apparatus according to claim 8, wherein
The 1 st storage tank is a processing tank for processing the substrate by immersing the substrate in the processing liquid,
the 1 st temperature adjustment unit heats the processing liquid to the normal boiling point or higher while the substrate is not immersed in the processing liquid,
the gas supply unit supplies the gas to the processing liquid stored in the 1 st storage tank while the substrate is not immersed in the processing liquid.
12. The treatment liquid temperature adjusting apparatus according to claim 11, wherein
The 1 st temperature control unit heats the treatment liquid to the normal boiling point or higher after discharging a part or all of the treatment liquid stored in the 1 st storage tank and replacing a part or all of the treatment liquid with a new one,
the gas supply means supplies the gas to the processing liquid stored in the 1 st storage tank after a part or all of the processing liquid stored in the 1 st storage tank is discharged and a part or all of the processing liquid is replaced with a new processing liquid.
13. The treatment liquid temperature adjusting device according to any one of claims 8 to 12, wherein
The exhaust pipe section includes an exhaust pipe for discharging the steam and the gas from the 1 st storage tank,
the cross-sectional area of the flow path of the exhaust pipe satisfies the following equation:
A×V≧Q
a: the cross-sectional area of the flow path of the exhaust pipe
V: a flow rate of the exhaust gas flowing through the flow path of the exhaust pipe when the process of heating the process liquid to the normal boiling point or higher and the process of supplying the gas to the process liquid are not performed
Q: the amount of exhaust gas per unit time of the water vapor and the gas.
14. The treatment liquid temperature adjusting apparatus according to any one of claims 8 to 12, wherein a raw material of the gas supply member is a resin.
15. A substrate processing system is provided with:
the treatment liquid temperature adjusting device according to any one of claims 8 to 10; and
and a substrate processing unit for processing the substrate with the processing liquid.
16. A treatment liquid temperature control device is provided with:
a 1 st temperature adjusting unit for heating a processing liquid for processing a substrate to a temperature equal to or higher than a normal boiling point of the processing liquid;
a 1 st storage tank for storing the treatment liquid heated by the 1 st temperature control unit;
a gas supply unit configured to supply a gas for promoting evaporation of moisture from the processing liquid stored in the 1 st storage tank to the processing liquid;
a gas discharge piping section for discharging the vapor and the gas from the 1 st storage tank;
a 2 nd storage tank to which the treatment liquid is supplied from the 1 st storage tank after the concentration of the treatment liquid stored in the 1 st storage tank reaches a target value; and
a 2 nd temperature control unit configured to control the temperature of the treatment liquid stored in the 2 nd storage tank so that the concentration of the treatment liquid is maintained at the target value; and is
The 2 nd reservoir tank supplies the processing liquid to a substrate processing unit that processes the substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| JP2020053377A JP7413113B2 (en) | 2020-03-24 | 2020-03-24 | Processing liquid temperature control method, substrate processing method, processing liquid temperature control device, and substrate processing system |
| JP2020-053377 | 2020-03-24 |
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| CN113451174A true CN113451174A (en) | 2021-09-28 |
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| Country | Link |
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| JP (1) | JP7413113B2 (en) |
| KR (1) | KR20210119319A (en) |
| CN (1) | CN113451174A (en) |
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| TWI839145B (en) * | 2022-03-15 | 2024-04-11 | 日商斯庫林集團股份有限公司 | Substrate processing method and substrate processing apparatus |
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| JP5231920B2 (en) | 2008-09-29 | 2013-07-10 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and processing liquid replacement method thereof |
| JP5213638B2 (en) | 2008-10-24 | 2013-06-19 | 新電元工業株式会社 | Wet etching method |
| JP6502633B2 (en) | 2013-09-30 | 2019-04-17 | 芝浦メカトロニクス株式会社 | Substrate processing method and substrate processing apparatus |
| JP6324775B2 (en) | 2014-03-17 | 2018-05-16 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus and substrate processing method using substrate processing apparatus |
| TWI630652B (en) * | 2014-03-17 | 2018-07-21 | 斯克林集團公司 | Substrate processing apparatus and substrate processing method using substrate processing apparatus |
| JP6454611B2 (en) | 2015-06-19 | 2019-01-16 | 株式会社ジェイ・イー・ティ | Substrate processing system and substrate processing method |
| JP6999392B2 (en) | 2017-02-15 | 2022-01-18 | 東京エレクトロン株式会社 | Substrate liquid processing equipment |
| JP6857526B2 (en) | 2017-03-27 | 2021-04-14 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing equipment and substrate processing method |
| JP7101075B2 (en) | 2017-09-11 | 2022-07-14 | 東京エレクトロン株式会社 | Substrate liquid processing equipment and storage medium |
| JP2019129243A (en) | 2018-01-25 | 2019-08-01 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing device and substrate processing method |
| JP7190892B2 (en) | 2018-12-12 | 2022-12-16 | 東京エレクトロン株式会社 | SUBSTRATE PROCESSING APPARATUS AND PROCESSING LIQUID CONCENTRATION METHOD |
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| TWI839145B (en) * | 2022-03-15 | 2024-04-11 | 日商斯庫林集團股份有限公司 | Substrate processing method and substrate processing apparatus |
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| TWI813961B (en) | 2023-09-01 |
| JP7413113B2 (en) | 2024-01-15 |
| TW202141614A (en) | 2021-11-01 |
| JP2021153145A (en) | 2021-09-30 |
| KR20210119319A (en) | 2021-10-05 |
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