CN113433379B - Ee voltage detection device and method for IGBT - Google Patents
Ee voltage detection device and method for IGBT Download PDFInfo
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- CN113433379B CN113433379B CN202010206622.5A CN202010206622A CN113433379B CN 113433379 B CN113433379 B CN 113433379B CN 202010206622 A CN202010206622 A CN 202010206622A CN 113433379 B CN113433379 B CN 113433379B
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- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16566—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
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Abstract
The invention provides an Ee voltage detection device for an IGBT, which comprises: the Ee voltage detection sampling unit is used for collecting emitter voltage VEe of the IGBT to be detected, and obtaining a comparison input signal Vee after voltage division and filtering processing is carried out on the emitter voltage VEe; the state monitoring threshold setting unit is used for setting a high level threshold Vref1 and a low level threshold Vref2 of the Ee voltage of the IGBT emitter to be detected; the Ee voltage state comparison unit is used for obtaining a high level state and a low level state of the Ee voltage of the IGBT emitter to be detected; an Ee voltage state conversion unit for obtaining a high level state signal, a middle level state signal and a low level state signal; and an Ee voltage state processing unit for obtaining a high level state code, a middle level state code and a low level state code. The invention can quickly and accurately position the Ee voltage fault of the IGBT emitter, and is convenient for fault diagnosis; the intelligent control is facilitated, and the reliability and stability of the intelligent control are enhanced.
Description
Technical Field
The invention relates to the technical field of electronics, in particular to an Ee voltage detection device and method for an IGBT.
Background
The IGBT is widely applied to the field of converters, the working stability of the converters is particularly important, quick response is needed when a fault occurs, and otherwise, great economic loss is caused. While the emitter signal VEe of the IGBT is an important parameter indicator for its proper operation.
For an electrical fault generated by the IGBT emitter signal VEe, in the prior art, the corresponding drive board and the IGBT are often required to be detached, and fault points are debugged step by step to perform fault analysis. To simplify troubleshooting, enable fault diagnosis, and intelligent control, it is desirable to monitor a plurality of digital status information of emitter signal VEe to quickly and accurately locate the fault.
Therefore, the invention provides an Ee voltage detection device and method for an IGBT.
Disclosure of Invention
To solve the above problems, the present invention provides an Ee voltage detection apparatus for an IGBT, the apparatus comprising:
the Ee voltage detection sampling unit is used for collecting emitter voltage VEe of the IGBT to be detected, and obtaining a comparison input signal Vee after voltage division and filtering processing is carried out on the emitter voltage VEe;
the state monitoring threshold setting unit is used for setting a high level threshold Vref1 and a low level threshold Vref2 of the voltage of the emitter Ee of the IGBT to be detected;
the Ee voltage state comparison unit is used for comparing the comparison input signal Vee with the high level threshold Vref1 and the low level threshold Vref2 respectively to obtain the high level state and the low level state of the Ee voltage of the IGBT emitter to be detected;
an Ee voltage state converting unit, configured to perform level conversion on the high level state and the low level state to obtain a high level state signal, a middle level state signal, and a low level state signal;
and an Ee voltage state processing unit, configured to perform state processing on the high level state signal, the intermediate level state signal, and the low level state signal, respectively, to obtain a high level state code, an intermediate level state code, and a low level state code.
According to an embodiment of the present invention, the Ee voltage detection sampling unit includes: a first voltage divider circuit and a filter circuit.
According to an embodiment of the present invention, the state monitoring threshold setting unit includes: a second voltage division circuit and a third voltage division circuit.
According to one embodiment of the present invention, the Ee voltage state comparing unit includes: a high level threshold comparison circuit for comparing the comparison input signal Vee with the high level threshold Vref1 to obtain the high level state.
According to one embodiment of the present invention, the Ee voltage state comparing unit includes: a low level threshold comparison circuit for comparing the comparison input signal Vee with the low level threshold Vref2 to obtain the low level state.
According to one embodiment of the present invention, the Ee voltage state transition unit includes: and the first state conversion circuit is used for carrying out level conversion on the high level state to obtain the high level state signal.
According to one embodiment of the present invention, the Ee voltage state transition unit includes: and the second state conversion circuit is used for carrying out level conversion on the high level state and the low level state to obtain the intermediate level state signal.
According to one embodiment of the present invention, the Ee voltage state transition unit includes: and the third state conversion circuit is used for carrying out level conversion on the low level state to obtain the low level state signal.
According to one embodiment of the present invention, the Ee voltage status processing unit includes:
the first state processing circuit is used for carrying out state processing on the high-level state signal to obtain the high-level state code;
the second state processing circuit is used for carrying out state processing on the intermediate level state signal to obtain the intermediate level state code;
and the third state processing circuit is used for carrying out state processing on the low-level state signal to obtain the low-level state code.
According to another aspect of the present invention, there is also provided an Ee voltage detection method for an IGBT, the method including the steps of:
collecting VEe emitter voltage of an IGBT to be detected, and performing voltage division and filtering processing on VEe emitter voltage to obtain a comparison input signal Vee;
setting a high level threshold Vref1 and a low level threshold Vref2 of the voltage of the emitter Ee of the IGBT to be detected;
comparing the comparison input signal Vee with the high level threshold Vref1 and the low level threshold Vref2 respectively to obtain a high level state and a low level state of the voltage of the emitter Ee of the IGBT to be detected;
carrying out level conversion on the high level state and the low level state to obtain a high level state signal, a middle level state signal and a low level state signal;
and respectively carrying out state processing on the high-level state signal, the intermediate-level state signal and the low-level state signal to obtain a high-level state code, an intermediate-level state code and a low-level state code.
According to the Ee voltage detection device and method for the IGBT, the state signal conversion of the Ee voltage of the emitting electrode is completed through voltage sampling and a subsequent circuit, and 3 state signals are generated to judge the state of the Ee voltage of the emitting electrode; the generated state signal can be directly used for upper layer intelligent control. The invention realizes the intelligent monitoring of the power device and can monitor the change state of the Ee voltage of the power device in real time. The invention can quickly and accurately position the Ee voltage fault of the IGBT emitter, and is convenient for fault diagnosis; the intelligent control is facilitated, and the reliability and stability of the intelligent control are enhanced.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 shows a block diagram of an Ee voltage detection apparatus for an IGBT according to an embodiment of the present invention;
fig. 2 shows a block diagram of an Ee voltage detection apparatus for an IGBT according to another embodiment of the present invention; and
fig. 3 shows a flowchart of an Ee voltage detection method for an IGBT according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in further detail below with reference to the accompanying drawings.
The invention can simultaneously detect a plurality of pieces of digital state information of the emitter signal VEe, and further judge the electrical fault possibly generated during the operation of the IGBT, thereby more rapidly and accurately positioning the fault, providing signal input for fault diagnosis and intelligent control, and greatly simplifying the fault troubleshooting work.
Fig. 1 shows a block diagram of an Ee voltage detection apparatus for an IGBT according to an embodiment of the present invention.
As shown in fig. 1, the Ee voltage detection apparatus 100 includes an Ee voltage detection sampling unit 101, a state monitoring threshold setting unit 102, an Ee voltage state comparison unit 103, an Ee voltage state conversion unit 104, and an Ee voltage state processing unit 105.
The Ee voltage detection sampling unit 101 is used for collecting emitter voltage VEe of the to-be-detected IGBT, and obtaining a comparison input signal Vee after voltage division and filtering processing is performed on the emitter voltage VEe.
The state monitoring threshold setting unit 102 is configured to set a high level threshold Vref1 and a low level threshold Vref2 of the emitter Ee voltage of the IGBT to be detected.
The Ee voltage state comparing unit 103 is configured to compare the comparison input signal Vee with a high level threshold Vref1 and a low level threshold Vref2, respectively, to obtain a high level state and a low level state of the Ee voltage of the IGBT emitter to be detected.
The Ee voltage state converting unit 104 is configured to perform level conversion on the high level state and the low level state to obtain a high level state signal, a middle level state signal, and a low level state signal.
The Ee voltage state processing unit 105 is configured to perform state processing on the high level state signal, the intermediate level state signal, and the low level state signal, respectively, to obtain a high level state code, an intermediate level state code, and a low level state code.
Fig. 2 shows a block diagram of an Ee voltage detection apparatus for an IGBT according to another embodiment of the present invention.
As shown in fig. 2, the Ee voltage detection apparatus 200 includes a first voltage divider 201, a filter circuit 202, a second voltage divider 203, a third voltage divider 204, a high threshold comparator 205, a low threshold comparator 206, a first state transition circuit 207, a second state transition circuit 208, a third state transition circuit 209, a first state processing circuit 2010, a second state processing circuit 2011, and a third state processing circuit 2012.
The Ee voltage detection sampling unit 101 includes: a first voltage divider circuit and a filter circuit. The Ee voltage detection sampling unit 101 divides the emitter voltage VEe of the IGBT power device through a resistor, and converts the divided voltage into a signal Vee which can be received by the Ee voltage state comparison unit 103 after filtering; the unit needs to guarantee fast switching and response of the Ee voltage.
The state monitoring threshold setting unit 102 includes: a second voltage dividing circuit 203 and a third voltage dividing circuit 204. The state monitoring threshold setting unit 102 sets Vref1 and Vref2 by resistance voltage division for monitoring a high level (>0) state and a low level (<0) state of the emitter Ee voltage, respectively.
The Ee voltage state comparing unit 103 includes: the high level threshold comparison circuit 205 is configured to compare the comparison input signal Vee with a high level threshold Vref1 to obtain a high level state.
The Ee voltage state comparing unit 103 includes: the low level threshold comparison circuit 206 is configured to compare the comparison input signal Vee with a low level threshold Vref2 to obtain a low level state.
The Ee voltage state comparing unit 103 compares output signals of the Ee voltage detection sampling unit 101 and the state monitoring threshold setting unit 102, and determines the state of the Ee voltage. The high (>0) state of the emitter Ee voltage is generated by comparing the Vee signal with Vref1, and the low (<0) state of the emitter Ee voltage is generated by comparing the Vee signal with Vref 2.
The Ee voltage state transition unit 104 includes: the first state switching circuit 207 is configured to perform level switching on the high level state to obtain a high level state signal (a high level state Ee1 of the emitter Ee voltage).
The Ee voltage state transition unit 104 includes: the second state conversion circuit 208 performs level conversion on the high level state and the low level state to obtain an intermediate level state signal (an intermediate level state Ee2 of the emitter Ee voltage).
The Ee voltage state transition unit 104 includes: the third state switching circuit 209 is configured to perform level switching on the low level state to obtain a low level state signal (emitter Ee voltage low level state Ee 3).
The Ee voltage state converting unit 104 performs conversion of the state signal of the emitter Ee voltage according to the type of the comparator and the interface mode, and generates 3 kinds of state signals (a high level state signal, a middle level state signal, and a low level state signal).
The Ee voltage status processing unit 105 includes:
the first state processing circuit 2010 is configured to perform state processing on the high-level state signal to obtain a high-level state code (a high-level state code of the emitter Ee voltage).
The second state processing circuit 2011 is configured to perform state processing on the intermediate level state signal to obtain an intermediate level state code (an intermediate level state code of the emitter Ee voltage).
The third state processing circuit 2012 performs state processing on the low-level state signal to obtain a low-level state code (a low-level state code of the emitter Ee voltage).
The Ee voltage state processing unit 105 forms 3 states of emitter Ee voltage (a high level state signal, an intermediate level state signal, and a low level state signal) into 3 emitter Ee voltage state codes (a high level state code, an intermediate level state code, and a low level state code), and transmits the codes to the upper-layer intelligent control system.
According to the invention, an Ee voltage detection sampling unit is used for converting an emitter voltage VEe of the IGBT power device into an emitter comparison input signal Vee through filtering processing, and meanwhile, a state monitoring threshold (Vref1 and Vref2) of the Ee voltage of the emitter of the power device (IGBT) is set through a state monitoring threshold setting unit.
The signals are input into an Ee voltage state comparison unit, the state of the Ee voltage is judged through comparison, level conversion is completed through an Ee voltage state conversion unit, the state of the Ee voltage of the emitting electrode is converted into a signal required by a rear stage (an Ee voltage state processing unit), and finally the state of the Ee voltage of the emitting electrode is converted into state code information through the Ee voltage state processing unit.
Fig. 3 shows a flowchart of an Ee voltage detection method for an IGBT according to an embodiment of the present invention.
As shown in fig. 3, in step S301, emitter voltage VEe of the IGBT to be detected is collected, and emitter voltage VEe is divided and filtered to obtain a comparison input signal Vee.
Specifically, VEe of the IGBT to be detected is collected by the Ee voltage detection sampling unit 101, and the emitter voltage VEe is subjected to voltage division and filtering to obtain a comparison input signal Vee.
As shown in fig. 3, in step S302, a high level threshold Vref1 and a low level threshold Vref2 of the voltage of the emitter Ee of the IGBT to be detected are set.
Specifically, the high level threshold Vref1 and the low level threshold Vref2 of the IGBT emitter Ee voltage to be detected are set by the state monitoring threshold setting unit 102.
As shown in fig. 3, in step S303, the comparison input signal Vee is compared with the high level threshold Vref1 and the low level threshold Vref2, respectively, to obtain the high level state and the low level state of the voltage of the emitter Ee of the IGBT to be detected.
Specifically, the Ee voltage state comparing unit 103 compares the comparison input signal Vee with a high level threshold Vref1 and a low level threshold Vref2, respectively, to obtain a high level state and a low level state of the Ee voltage of the IGBT emitter to be detected.
As shown in fig. 3, in step S304, the high level state and the low level state are level-converted to obtain a high level state signal, a middle level state signal, and a low level state signal.
Specifically, the Ee voltage state converting unit 104 performs level conversion on the high level state and the low level state to obtain a high level state signal, a middle level state signal, and a low level state signal.
As shown in fig. 3, in step S305, the high-level state signal, the intermediate-level state signal, and the low-level state signal are subjected to state processing, and a high-level state code, an intermediate-level state code, and a low-level state code are obtained.
Specifically, the Ee voltage state processing unit 105 performs state processing on the high level state signal, the intermediate level state signal, and the low level state signal, respectively, to obtain a high level state code, an intermediate level state code, and a low level state code.
In summary, the Ee voltage detection apparatus and method for the IGBT provided by the present invention complete the conversion of the state signal of the emitter Ee voltage through the voltage sampling and the subsequent circuit, and generate 3 kinds of state signals for determining the state of the emitter Ee voltage; the generated state signal can be directly used for upper layer intelligent control. The invention realizes the intelligent monitoring of the power device and can monitor the change state of the Ee voltage of the power device in real time. The invention can quickly and accurately position the Ee voltage fault of the IGBT emitter, and is convenient for fault diagnosis; the intelligent control is facilitated, and the reliability and stability of the intelligent control are enhanced.
It is to be understood that the disclosed embodiments of the invention are not limited to the particular structures, process steps, or materials disclosed herein but are extended to equivalents thereof as would be understood by those ordinarily skilled in the relevant arts. It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to be limiting.
Reference in the specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. Thus, the appearances of the phrase "one embodiment" or "an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. An Ee voltage detection apparatus for an IGBT, characterized in that the apparatus comprises:
the Ee voltage detection sampling unit is used for collecting emitter voltage VEe of the IGBT to be detected, and obtaining a comparison input signal Vee after voltage division and filtering processing is carried out on the emitter voltage VEe;
the state monitoring threshold setting unit is used for setting a high level threshold Vref1 and a low level threshold Vref2 of the voltage of the emitter Ee of the IGBT to be detected;
the Ee voltage state comparison unit is used for comparing the comparison input signal Vee with the high level threshold Vref1 and the low level threshold Vref2 respectively to obtain the high level state and the low level state of the Ee voltage of the IGBT emitter to be detected;
an Ee voltage state converting unit, configured to perform level conversion on the high level state and the low level state to obtain a high level state signal, a middle level state signal, and a low level state signal;
and an Ee voltage state processing unit, configured to perform state processing on the high level state signal, the intermediate level state signal, and the low level state signal, respectively, to obtain a high level state code, an intermediate level state code, and a low level state code.
2. The apparatus of claim 1, wherein the Ee voltage detection sampling unit comprises: a first voltage divider circuit and a filter circuit.
3. The apparatus of claim 1, wherein the condition monitoring threshold setting unit comprises: a second voltage division circuit and a third voltage division circuit.
4. The apparatus of claim 1, wherein the Ee voltage state comparison unit comprises: a high level threshold comparison circuit for comparing the comparison input signal Vee with the high level threshold Vref1 to obtain the high level state.
5. The apparatus of claim 4, wherein the Ee voltage state comparison unit comprises: a low level threshold comparison circuit for comparing the comparison input signal Vee with the low level threshold Vref2 to obtain the low level state.
6. The apparatus of claim 1, wherein the Ee voltage state transition unit comprises: and the first state conversion circuit is used for carrying out level conversion on the high level state to obtain the high level state signal.
7. The apparatus of claim 6, wherein the Ee voltage state transition unit comprises: and the second state conversion circuit is used for carrying out level conversion on the high level state and the low level state to obtain the intermediate level state signal.
8. The apparatus of claim 7, wherein the Ee voltage state transition unit comprises: and the third state conversion circuit is used for carrying out level conversion on the low level state to obtain the low level state signal.
9. The apparatus of claim 1, wherein the Ee voltage state processing unit comprises:
the first state processing circuit is used for carrying out state processing on the high-level state signal to obtain the high-level state code;
the second state processing circuit is used for carrying out state processing on the intermediate level state signal to obtain the intermediate level state code;
and the third state processing circuit is used for carrying out state processing on the low-level state signal to obtain the low-level state code.
10. An Ee voltage detection method for an IGBT, characterized by comprising the steps of:
collecting VEe emitter voltage of an IGBT to be detected, and performing voltage division and filtering processing on VEe emitter voltage to obtain a comparison input signal Vee;
setting a high level threshold Vref1 and a low level threshold Vref2 of the voltage of the emitter Ee of the IGBT to be detected;
comparing the comparison input signal Vee with the high level threshold Vref1 and the low level threshold Vref2 respectively to obtain a high level state and a low level state of the voltage of the emitter Ee of the IGBT to be detected;
carrying out level conversion on the high level state and the low level state to obtain a high level state signal, a middle level state signal and a low level state signal;
and respectively carrying out state processing on the high-level state signal, the intermediate-level state signal and the low-level state signal to obtain a high-level state code, an intermediate-level state code and a low-level state code.
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