CN113430497A - Double-sided coating method and double-sided coating equipment for flexible substrate - Google Patents
Double-sided coating method and double-sided coating equipment for flexible substrate Download PDFInfo
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- 230000009975 flexible effect Effects 0.000 title claims abstract description 131
- 239000000758 substrate Substances 0.000 title claims abstract description 115
- 238000000576 coating method Methods 0.000 title claims abstract description 90
- 239000011248 coating agent Substances 0.000 title claims abstract description 68
- 239000010408 film Substances 0.000 claims description 192
- 238000012545 processing Methods 0.000 claims description 81
- 239000000463 material Substances 0.000 claims description 28
- 239000010409 thin film Substances 0.000 claims description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 238000005452 bending Methods 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 102
- 230000000052 comparative effect Effects 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000007888 film coating Substances 0.000 description 6
- 238000009501 film coating Methods 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 238000005336 cracking Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
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Abstract
A double-sided coating method and double-sided coating equipment for a flexible substrate belong to the field of semiconductor preparation. The flexible substrate is provided with a first surface and a second surface which are oppositely arranged along the thickness direction, and the double-sided coating method of the flexible substrate comprises the following steps: and S1, forming a first film layer on the first surface. And S2, forming a second film layer on the second surface. And S3, repeating the steps S1 and S2 in sequence until the total thickness of the first film consisting of the plurality of first film layers and the total thickness of the second film consisting of the plurality of second film layers reach the target thickness. By means of the mode that the first film layer and the second film layer with specific thicknesses are formed in a staggered mode in time, stress release of the first film layer and the second film layer can be reduced, the problems that the quality of the film is reduced, the flexible substrate is warped, even the film is cracked and the like due to double-sided coating of the flexible substrate can be solved, and the stability and the yield of products produced in a large scale are effectively improved.
Description
Technical Field
The application relates to the field of semiconductor preparation, in particular to a double-sided coating method and double-sided coating equipment for a flexible substrate.
Background
The double-sided coating of the flexible substrate easily causes the problems of film quality reduction, film warping, even film cracking and the like.
Transparent Conductive Oxide (TCO) films are widely used in the field of floodlight semiconductors such as decorative coatings, low-E glass, flat panel displays, light emitting diodes, photoelectric detection, photoelectric communication, solar cells and the like due to their excellent photoelectric properties, and a common preparation method thereof is as follows, taking TCO as an example: physical deposition methods such as magnetron sputtering, thermal evaporation, ion plating, laser assisted deposition; chemical deposition methods, such as spray pyrolysis, chemical vapor deposition, atomic layer deposition, knife coating, and the like, all contribute to some extent to the above-mentioned problems.
Since the magnetron sputtering technology is a first choice in the current TCO film preparation due to its mature industrial application and excellent cost advantage, the magnetron sputtering technology is taken as an example, and a common means for solving the above technical problems is to change the preparation conditions, such as changing the process gas, the power density of the plasma, the pressure, the temperature, etc., and the auxiliary anode, the special magnetic field design, the carrier structure, etc. However, the above solutions do not achieve good effects, and the flexible double-sided coating technology is still one of the difficulties in industrial production.
In view of this, the present application is hereby presented.
Disclosure of Invention
The application provides a double-sided coating method and double-sided coating equipment for a flexible substrate, which can solve the problems that the quality of a film is reduced, the film is warped, even the film is cracked and the like easily caused by double-sided coating of the flexible substrate.
The embodiment of the application is realized as follows:
in a first aspect, the present application provides a method for double-sided coating of a flexible substrate, wherein the flexible substrate has a first surface and a second surface oppositely arranged along a thickness direction of the flexible substrate, and the method for double-sided coating of the flexible substrate comprises:
and S1, forming a first film layer on the first surface.
And S2, forming a second film layer on the second surface.
And S3, repeating the steps S1 and S2 in sequence until the total thickness of the first film consisting of the plurality of first film layers and the total thickness of the second film consisting of the plurality of second film layers reach the target thickness.
That is, a first film layer with a target thickness is pre-divided into a plurality of first film layers in advance, a second film layer with a target thickness is pre-divided into a plurality of second film layers in advance, then a first film layer is formed on a first surface, a first second film layer is formed on a second surface according to a time sequence, the second first film layer is continuously formed on the surface of the first film layer, then a second film layer … … is formed on the first second film layer, namely, the steps S1 and S2 are repeated in sequence and alternately until the total thickness of the first film and the total thickness of the second film reach the target thickness, so that the plurality of first film layers forming the first film are overlapped in space continuously to form a whole, the forming time interval of each first film layer, the plurality of second film layers forming the second film are overlapped in space continuously to form a whole, but the forming time interval of each second film layer, so as to realize the staggered preparation of the first film layer and the second film layer in time.
Through the arrangement, the stress of the first surface and the stress of the second surface are respectively deformed and split into a plurality of small parts, then the first film layer and the second film layer with specific thicknesses are staggered in time, at least part of stress is offset by the first film layer and the second film layer with specific thicknesses, the stress release of the first film layer and the second film layer can be reduced, the problems of film quality reduction, film warping, film cracking and the like caused by double-sided coating of a flexible substrate can be solved, and the product stability and the yield of large-scale production are effectively improved. When the thicknesses of the first film layer and the second film layer are not within the specific ranges, the counteracting stress is not substantially applied, and the technical problem of the present application cannot be solved.
In a second aspect, the present application provides a double-sided coating apparatus for implementing the method of double-sided coating of a flexible substrate provided in the first aspect, the apparatus having a coating chamber, the coating chamber having a first processing portion and a second processing portion, the first processing portion and the second processing portion being arranged at intervals to form a gap for accommodating the flexible substrate, the flexible substrate being capable of moving along an extending direction of the gap.
The first processing part is provided with a plurality of first processing areas which are arranged at intervals along the extending direction of the gap, each first processing area is used for forming a first film layer on the first surface, the second processing part is provided with a plurality of second processing areas which are arranged at intervals along the extending direction of the gap, each second processing area is used for forming a second film layer on the second surface, and orthographic projections of the first processing areas and the second processing areas are sequentially staggered along the extending direction of the gap.
Through the cooperation in above-mentioned first processing district and second processing district and the removal of flexible substrate, can realize the purpose of crisscross formation in first rete and the second rete time, simultaneously above-mentioned arranging can realize a plurality of flexible substrates along the axial displacement of predetermineeing speed along the coating chamber, can realize a plurality of flexible substrates and move along certain speed in order, realize carrying out the pipelining of two-sided coating to every flexible substrate in succession, effectively improve machining efficiency.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
FIG. 1 is a schematic flow chart of a flexible substrate bent downward to form a first film layer on a first surface;
FIG. 2 is a schematic flow chart of a flexible substrate bent upward to form a first film layer on a first surface;
FIG. 3 is a schematic structural view of a double-sided coating apparatus;
fig. 4 is a schematic structural diagram of an SHJ solar cell.
Icon: 1-a flexible substrate; 2-a first film layer; 3-a carrier; 10-double-sided coating equipment; 100-a feed chamber; 110-a front buffer chamber; 120-a film coating chamber; 121-a first processing section; 1211 — a first processing zone; 123-a second processing section; 1231-a second processing zone; 124-gap; 125-rear buffer chamber; 126-a discharge chamber; 127-a vacuum valve; 20-SHJ solar cells; a 201-n type monocrystalline silicon wafer; 202-a first intrinsic amorphous silicon thin film; 203-a second intrinsic amorphous silicon thin film; 204-p type doped silicon thin film; 205-n type doped amorphous silicon thin film; 206-first TCO film; 207-second TCO film; 208-silver grid line electrodes.
Detailed Description
Embodiments of the present application will be described in detail below with reference to examples, but those skilled in the art will appreciate that the following examples are only illustrative of the present application and should not be construed as limiting the scope of the present application. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
The applicant researches and discovers that the main reasons for the problems of the quality reduction of the film, the warping of the substrate, even the cracking of the film and the like after the double-sided coating of the flexible base material are caused are that any coating technology generates internal stress when the expansion coefficient of the coated layer is mismatched with the expansion coefficient of the flexible base material and the temperature difference between the coated layer and the flexible base material is obvious in the coating process. Such stress may act on the flexible substrate and the film, thereby causing the above-mentioned problems. And the single-layer film layers with specific thickness are adopted to carry out double-sided coating on the flexible substrate, and when the single-layer film layers on the two sides are staggered in forming time, certain internal stress can be effectively offset, so that the problems are avoided.
The present application is hereby presented.
The following description is made specifically for a method and an apparatus for double-sided coating of a flexible substrate according to an embodiment of the present application:
a double-sided coating method for a flexible substrate is provided, wherein the flexible substrate is provided with a first surface and a second surface which are oppositely arranged along the thickness direction of the flexible substrate.
The flexible substrate referred to herein is a substrate having a flexible property, and includes, but is not limited to, a metal foil flexible substrate (e.g., stainless steel), an ultra-thin glass (thickness less than 50 μm) flexible substrate, a polymer flexible substrate (specifically, for example, PE, PET, PP, PS, PEN, PI, etc.), a silicon wafer flexible substrate (thickness less than 200 μm), and a flexible substrate having a surface covered with at least one of a single-layer inorganic thin film or a multi-layer organic/inorganic thin film.
Taking an SHJ solar cell as an example, the flexible base material is composed of an N-type doped amorphous silicon thin film, a first intrinsic amorphous thin film, a monocrystalline silicon wafer, a second intrinsic amorphous thin film and a P-type doped amorphous silicon thin film which are connected in sequence, wherein the thickness of the monocrystalline silicon wafer is more than 1 μm and less than 200 μm.
The double-sided coating method for the flexible substrate comprises the following steps:
and S0, fixing the flexible substrate to facilitate subsequent film coating.
Optionally, the flexible substrate is fixed by a carrier, wherein the carrier has a hollow area and a support area for supporting the flexible substrate, the area of the hollow area is greater than 95% of the area of the flexible substrate, and the area of the support area is less than 3% of the area of the flexible substrate. Through the arrangement, the area of the flexible base material which is not shielded is increased as much as possible while the support area is ensured to effectively support the flexible base material, so that double-sided coating is carried out, and material waste is avoided.
It should be noted that, in the process of performing the subsequent steps S1 to S3 after the fixing, the flexible base material may be vertically arranged, or may be horizontally arranged, where the horizontal arrangement refers to a placement manner in which the thickness direction thereof is substantially perpendicular to the horizontal plane, the vertical arrangement refers to a placement manner in which the thickness direction thereof is substantially parallel to the horizontal plane, and the specific arrangement direction may be selected according to actual requirements, which is not limited herein.
And S1, forming a first film layer on the first surface.
The thickness of the first film layer is greater than 0 and not greater than 50nm, for example, the thickness of the first film layer is 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm or 50nm, and when the thickness of the first film layer is greater than 50nm, the stress cannot be effectively eliminated, and the technical problem of the present application cannot be effectively solved.
Optionally, the thickness of the first film layer is 10-50nm, so that the operation is easy, the difficulty of preparing the first film layer is reduced, and meanwhile, the stress relieving effect is good and the film coating efficiency is high.
It should be noted that, because the flexible substrate may bend to some extent under the action of its own weight, and then generate stress, the film layer obtained after the first film plating on any surface of the flexible substrate along its thickness direction may warp, where the stress warping direction of the film layer on one side surface of the flexible substrate is opposite to the self-weight bending direction, and the stress warping direction of the film layer on the other side is the same as the self-weight bending direction.
Optionally, the stress warping direction of the first film layer formed on the first surface is opposite to the self-weight bending direction of the flexible substrate, that is, the side, opposite to the self-weight bending direction of the flexible substrate, of the surface of the flexible substrate on the stress warping direction of the film layer after the first film coating is used as the first surface, the first film layer is formed first, so that the bending stress generated by the self-weight of the flexible substrate can be effectively offset, the problems of the quality reduction of the film and the like are avoided, and the yield is further improved.
As shown in fig. 1, taking the horizontal position of the flexible substrate 1 as an example, when the middle of the flexible substrate 1 fixed by the carrier 3 is recessed downward, that is, the bending direction is downward, the film layer on the upper surface of the flexible substrate 1 bends downward toward the flexible substrate 1, the stress bending direction of the film layer on the upper surface is downward, the film layer on the lower surface of the flexible substrate 1 is stretched by the flexible substrate to bend upward toward the flexible substrate, and the stress bending direction is upward, so that the lower surface of the flexible substrate 1 is selected as the first surface to form the first film layer 2.
As shown in fig. 2, the edge of the flexible substrate 1 fixed by the carrier 3 sinks, that is, the bending direction of the flexible substrate 1 is upward, the film layer on the upper surface of the flexible substrate 1 warps downward, and the film layer on the lower surface of the flexible substrate 1 warps upward, so that the first layer of the first film layer 2 is formed by selecting the upper surface of the flexible substrate 1 as the first surface.
And S2, forming a second film layer on the second surface.
The thickness of the second film layer is greater than 0 and not greater than 50nm, for example, the thickness of the second film layer is 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm or 50nm, and when the thickness of the second film layer is greater than 50nm, the stress cannot be effectively eliminated due to the large thickness of the second film layer, and the technical problem of the application cannot be effectively solved.
Optionally, the thickness of the second film layer is 10-50nm, so that the operation is easy, the stress relieving effect is good, and the film coating efficiency is high.
The thickness of the first film layer and the thickness of the second film layer may be the same or different, and are not limited herein and may be selected according to actual requirements.
And S3, repeating the steps S1 and S2 in sequence until the total thickness of the first film consisting of the plurality of first film layers and the total thickness of the second film consisting of the plurality of second film layers reach the target thickness.
The step S3 is to realize that the plurality of first film layers constituting the first film are spatially and continuously superposed to form a whole, and the plurality of second film layers constituting the second film are spatially and continuously superposed to form a whole at the formation time interval of each first film layer, but at the formation time interval of each second film layer, so as to realize the temporally staggered preparation of the first film layers and the second film layers. The stress of the first surface coating film and the stress of the second surface coating film are respectively deformed and split into a plurality of small parts, then the first film layer and the second film layer with specific thicknesses are formed in a staggered mode in time, at least part of stress of the first film layer and the second film layer with specific thicknesses are mutually offset, the stress release of the first film and the second film can be reduced, the problems that the quality of the film is reduced, the film is warped, even the film is cracked and the like easily caused by double-sided coating of a flexible base material can be effectively relieved, and the stability and the yield of products produced in large scale are effectively improved.
Optionally, the material of the first film includes, but is not limited to, any one of a metal and a compound thereof, and may also be other mediums, where the metal compound includes at least one of a metal oxide, a nitride, and an oxynitride. The material of the second film includes, but is not limited to, any one of metal and its compound, and may also be other mediums, where the metal compound includes at least one of metal oxide, nitride and oxynitride.
The above metals include, but are not limited to, Al, Zr, V, Mn, Nb, Zn, Cr, Ga, Fe, Cd, In, Ti, Co, Ni, Mo, Sn, Pb, Cu, Po, Ag, Ru, Os, Pd, Pt or Au, etc., and the metal compounds include, but are not limited to, TiO2、Al2O3、CeO2、HfO2It may also be composed of one or more of AlN, TiN, NiN, CrN, ZrNTa2N, HfTaON, HfSiON, etc.
Specifically, for example, the first film is a metal film, a transparent conductive oxide film (TCO), or other dielectric film. The second film is also a metal film, a transparent conductive oxide film (TCO) or other dielectric film.
The material of the first film may be the same as or different from the material of the second film, and due to different material properties, even if the same thickness has different stress counteracting effects, in some optional embodiments, the material of the first film may be the same as the material of the second film, which is convenient for more accurately controlling the stress counteracting effects.
In some optional embodiments, the first film and the second film are both transparent conductive oxide films.
It should be noted that the thickness of each first film layer may be the same or different, and the thickness of each second film layer may be the same or different, and in order to facilitate the processing control of the precision, the thickness of each first film layer in the plurality of first film layers is the same, and the thickness of each second film layer in the plurality of second film layers is the same.
Optionally, the steps S1 to S3 are performed on the flexible substrate in a coating chamber of the coating apparatus, wherein the coating chamber includes a first processing portion and a second processing portion, the first processing portion and the second processing portion are spaced apart to form a gap, and the flexible substrate is located in the gap and can move along the extending direction of the gap.
The first processing part is provided with a plurality of first processing areas which are arranged at intervals along the extending direction of the gap, each first processing area is used for forming a first film layer on the first surface, the second processing part is provided with a plurality of second processing areas which are arranged at intervals along the extending direction of the gap, each second processing area is used for forming a second film layer on the second surface, and orthographic projections of the first processing areas and the second processing areas are sequentially staggered along the extending direction of the gap. That is, in the actual course of working, through the cooperation in first processing district and second processing district and the removal of flexible substrate, realize the purpose that first rete and second rete staggered formation in time, above-mentioned arrangement can realize simultaneously that a plurality of flexible substrates move along the extending direction in clearance along predetermineeing speed, realizes carrying out the assembly line operation of two-sided coating to every flexible substrate in succession, effectively improves machining efficiency.
Alternatively, the plurality of first processing zones are arranged at equal intervals, and the plurality of second processing zones are also arranged at equal intervals.
It should be noted that the number of the first processing areas is not less than the number of the first film layers, and when the number of the first processing areas is more than the number of the first film layers, the redundant first processing areas are not opened after the thickness of the first film layers meets the requirement, and similarly, the number relationship between the second processing areas and the second film layers can be obtained.
In addition, only one corresponding processing area may be provided on each of the first processing portion and the second processing portion, and the coating is achieved by using the time interval between the two processing areas, which is not described herein.
The first processing portion and the second processing portion process the first film layer and the second film layer, including but not limited to: magnetron sputtering, thermal evaporation, ion plating, laser assisted deposition, and the like.
Optionally, the first processing portion and the second processing portion process the first film layer and the second film layer by magnetron sputtering, and each of the first processing portion and each of the second processing portion is provided with a radio frequency magnetron sputtering source.
The following describes the double-sided coating method of the flexible substrate in detail with reference to the examples.
When the flexible substrate double-sided coating is applied to the SHJ solar cell, the problems of the quality reduction of the film, the warping of the film, even the cracking of the film and the like caused by the flexible substrate double-sided coating directly affect the yield and the fragment rate of the SHJ solar cell, and the above problems can be fed back visually, so that the application and the effect of the flexible substrate double-sided coating method of the present application are explained in the following examples 2-3 and comparative examples 1-2 by taking the SHJ solar cell as an example.
Example 1
Referring to fig. 3, a double-sided coating apparatus 10 includes a feeding chamber 100, a front buffer chamber 110, a coating chamber 120, a rear buffer chamber 125, a discharging chamber 126, and a vacuum valve 127.
The inlet chamber 100, the front buffer chamber 110, the coating chamber 120, the rear buffer chamber 125, and the outlet chamber 126 are sequentially connected via a vacuum valve 127 along the direction (indicated by an arrow in fig. 3) in which the flexible substrate (not shown) advances, and the adjacent two chambers can be communicated or independently sealed by opening and closing the vacuum valve 127. The inlet of the inlet chamber 100 and the outlet of the outlet chamber 126 are also closed by a vacuum valve 127.
The coating chamber 120 is internally provided with a first processing part 121 and a second processing part 123, the first processing part 121 and the second processing part 123 are arranged at intervals to form a gap 124 for accommodating a flexible base material, the advancing direction of the flexible base material in the coating chamber 120 is the same as the extending direction of the gap 124, the flexible base material can move along the extending direction of the gap 124, and the flexible base material is provided with a first surface and a second surface which are oppositely arranged along the thickness direction. The first processed portion 121 may be disposed above the second processed portion 123 as shown in fig. 3, or may be disposed below the second processed portion 123, which is not limited herein.
Wherein, the coating chamber 120 is columnar, and the extending direction of the gap 124 is coincident with the axial direction of the coating chamber 120.
Optionally, the double-side coating apparatus 10 includes a transport mechanism disposed within the coating chamber 120 for transporting the flexible substrate along the direction of extension of the gap 124.
The first processing part 121 is provided with a plurality of first processing areas 1211 arranged at intervals along the axial direction of the coating chamber 120, each first processing area 1211 is used for forming a first film layer 2 on the first surface, the second processing part 123 is provided with a plurality of second processing areas 1231 arranged at intervals along the axial direction of the coating chamber 120, each second processing area 1231 is used for forming a second film layer on the second surface, and the projections of the first processing areas 1211 and the second processing areas 1231 in the axial direction of the coating chamber 120 are sequentially arranged in a staggered mode.
Each of the first processing portions 121 and each of the second processing portions 123 are provided with a radio frequency magnetron sputtering source (not shown), and the processing of the first film layer and the second film layer is realized by opening and closing the radio frequency magnetron sputtering source.
Alternatively, the plurality of first processing regions 1211 are arranged at equal intervals, and the plurality of second processing portions 123 are arranged at equal intervals.
The coating apparatus includes a carrier (not shown) for fixing the flexible substrate, and the carrier is detachably connected to the transmission mechanism, such as a snap-fit connection, a screw connection, a clamping connection, and the like.
The carriers are arranged horizontally or vertically within the coating chamber 120 to enable the flexible substrates to be synchronously arranged horizontally or vertically within the coating chamber 120.
The carrier is provided with a supporting area and a hollow-out area which are connected with each other and used for supporting the flexible base material, the area of the hollow-out area is larger than 95% of the area of the flexible base material, and the area of the supporting area is smaller than 3% of the area of the flexible base material.
Optionally, the support area is annularly arranged in the circumferential direction of the hollow area.
Example 2
(1) As shown in fig. 4, an n-type monocrystalline silicon wafer 201 with a thickness of about 100 μm is obtained, the upper and lower surfaces of the n-type monocrystalline silicon wafer 201 are subjected to conventional surface texturing and chemical cleaning, so that a pyramid concave-convex structure capable of improving light absorption is formed on the surface, and an ultra-clean surface is formed after the chemical cleaning is performed again. Then, a first intrinsic amorphous silicon film 202 with the thickness of 5nm is deposited on the upper surface of the n-type monocrystalline silicon piece 201, a second intrinsic amorphous silicon film 203 with the thickness of 5nm is deposited on the lower surface of the n-type monocrystalline silicon piece 201, a p-type doped silicon film 204 with the thickness of 5nm is deposited on the first intrinsic amorphous silicon film 202, and an n-type doped amorphous silicon film 205 with the thickness of 5nm is deposited on the second intrinsic amorphous silicon film 203, so that surface passivation and field passivation are completed, and the whole body is used as the flexible base material 1.
(2) The double-sided plating is performed by using the double-sided plating apparatus 10 shown in embodiment 1 shown in fig. 3.
Wherein, the flexible substrate 1 is horizontally placed in the film coating chamber 120 shown in fig. 3 and fixed in the transmission mechanism through the carrier 3 in the manner shown in fig. 1, so that the flexible substrate 1 is located in the gap 124 and can advance along the extending direction of the gap 124, because the flexible substrate 1 is horizontally placed and the middle part is recessed, the flexible substrate is moved until the lower surface thereof corresponds to the first sputtering source of the first processing zone 1211, the first sputtering source of the first processing zone 1211 is opened, the first TCO film layer with the thickness of 20nm is deposited, then the flexible substrate is moved until the upper surface thereof corresponds to the first sputtering source of the second processing zone 1231, the first sputtering source of the second processing zone 1231 is opened, the second TCO film layer with the thickness of 20nm is deposited, the above steps are sequentially repeated until the deposition is completed until the thickness of the first TCO film 206 formed by the multiple layers of the first TCO film 2 is 100nm, and the thickness of the second TCO film 207 formed by the multiple layers of the second TCO films is 100nm, to complete the TCO coating and then out of the coating chamber 120.
Wherein, the magnetron sputtering material is an ITO target material, the sputtering power density is 3-8KW/m, the sputtering pressure is 0.2-0.8Pa, and the sputtering temperature is not higher than 250 ℃.
(3) And respectively manufacturing silver grid line electrodes 208 on the surfaces of the first TCO film and the second TCO film which are deviated from each other in the thickness direction, so as to form the SHJ solar cell 20 with a symmetrical structure.
Example 3
Example 3 differs from example 2 only in that the first film layer has a thickness of 20nm and the second film layer has a thickness of 25 nm.
Comparative example 1
Comparative example 1 adopts a double-sided coating manner (front-side coating and back-side coating) performed in a conventional manner, and the difference from example 2 is only that in step (2), in comparative example 2, a first TCO film with the thickness of 100nm is directly formed on the upper surface (front side) of the flexible substrate by adopting a magnetron sputtering manner, and then a second TCO film with the thickness of 100nm is directly formed on the lower surface (back side) of the flexible substrate by adopting a magnetron sputtering manner.
Comparative example 2
Comparative example 2 a double-sided coating method (back coating first and front coating second) performed in a conventional manner was used, and the difference from example 2 is only in step (2), a second TCO film with a thickness of 100nm was directly formed on the lower surface (back) of the flexible substrate by magnetron sputtering, and then a first TCO film with a thickness of 100nm was directly formed on the upper surface (front) of the flexible substrate by magnetron sputtering.
Test example 1
10000 SHJ solar cells were obtained by repeating examples 2 to 3 and comparative examples 1 to 3, respectively, and the SHJ solar cells were evaluated for good yield and chipping rate in the same evaluation manner, and the results are shown in Table 1.
TABLE 1 test results
| Yield of good products | Fraction rate | |
| Example 2 | 98.25％ | 0.08％ |
| Comparative example 1 | 97.35％ | 1.85％ |
| Comparative example 2 | 96.55％ | 2.95％ |
According to table 1, the flexible substrate double-sided coating method adopted in the application can effectively improve the yield of the SHJ solar cell and remarkably reduce the fragment rate, and obviously shows that the problems of product quality reduction, product warping, even film cracking and the like easily caused by the double-sided coating of the flexible substrate can be solved.
In conclusion, the flexible substrate double-sided coating method provided by the application can relieve the problems that the quality of the obtained product film is reduced, the product film is warped, even the film is cracked and the like easily caused by the double-sided coating of the flexible substrate, and effectively improves the stability and yield of the product produced in large scale. The double-sided coating equipment is simple to operate, can realize that a plurality of flexible substrates move along a certain speed in sequence, realizes the continuous assembly line operation of carrying out double-sided coating on each flexible substrate, and effectively improves the processing efficiency.
The foregoing is merely exemplary of the present application and is not intended to limit the present application, which may be modified or varied by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A double-sided coating method for a flexible substrate, which is characterized in that the flexible substrate is provided with a first surface and a second surface which are oppositely arranged along the thickness direction of the flexible substrate, and the double-sided coating method for the flexible substrate comprises the following steps:
s1, forming a first film layer on the first surface;
s2, forming a second film layer on the second surface;
s3, repeating the steps S1 and S2 in sequence until the total thickness of a first film formed by a plurality of layers of the first film and the total thickness of a second film formed by a plurality of layers of the second film reach a target thickness;
the thickness of the first film layer is greater than 0 and not greater than 50nm, and the thickness of the second film layer is greater than 0 and not greater than 50 nm.
2. The double-sided coating method for the flexible substrate according to claim 1, wherein the thickness of the first film layer is 10-50nm, and the thickness of the second film layer is 10-50 nm.
3. The double-sided coating method for the flexible substrate according to claim 1, wherein the stress warping direction of the first film layer formed on the first surface is opposite to the self-weight bending direction of the flexible substrate.
4. The method for double-sided coating of a flexible substrate according to claim 1, wherein the material of the first thin film comprises any one of a metal and a compound thereof, and the material of the second thin film comprises any one of a metal and a compound thereof.
5. The method for double-sided coating of a flexible substrate according to claim 4, wherein the first film is made of the same material as the second film.
6. The double-sided coating method for the flexible substrate according to claim 4, wherein the first film layer is a transparent conductive oxide film formed by magnetron sputtering, and/or the second film layer is a transparent conductive oxide film formed by magnetron sputtering.
7. The double-sided coating method for the flexible substrate according to claim 1, wherein the flexible substrate is composed of an N-type doped amorphous silicon thin film, a first intrinsic amorphous thin film, a monocrystalline silicon piece, a second intrinsic amorphous thin film and a P-type doped amorphous silicon thin film which are connected in sequence, and the thickness of the monocrystalline silicon piece is more than 1 μm and less than 200 μm.
8. The double-sided coating method for the flexible substrate according to any one of claims 1 to 7, wherein the flexible substrate is horizontally arranged during the steps S1 to S3.
9. A double-sided coating apparatus for carrying out the method of double-sided coating a flexible substrate according to any one of claims 1 to 8, wherein the coating apparatus has a coating chamber having a first processing portion and a second processing portion disposed therein at a distance from each other to form a gap for receiving the flexible substrate, the flexible substrate being movable in a direction extending along the gap;
the first processing part is provided with a plurality of first processing areas arranged at intervals along the extending direction of the gap, each first processing area is used for forming a first film layer on the first surface, the second processing part is provided with a plurality of second processing areas arranged at intervals along the extending direction of the gap, each second processing area is used for forming a second film layer on the second surface, and orthographic projections of the first processing areas and the second processing areas are sequentially arranged in a staggered mode along the extending direction of the gap.
10. The double-sided coating apparatus according to claim 9, comprising a carrier for fixing the flexible substrate, wherein the carrier has a hollow area and a support area for supporting the flexible substrate, the hollow area has an area greater than 95% of the area of the flexible substrate, and the support area has an area less than 3% of the area of the flexible substrate.
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