CN113416945A - Air inlet device of atomic layer deposition equipment and atomic layer deposition equipment - Google Patents

Air inlet device of atomic layer deposition equipment and atomic layer deposition equipment Download PDF

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Publication number
CN113416945A
CN113416945A CN202110703536.XA CN202110703536A CN113416945A CN 113416945 A CN113416945 A CN 113416945A CN 202110703536 A CN202110703536 A CN 202110703536A CN 113416945 A CN113416945 A CN 113416945A
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gas
gas inlet
reaction chamber
precursor
compensation
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CN113416945B (en
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纪红
赵培洋
赵可可
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure

Abstract

The invention provides an air inlet device and atomic layer deposition equipment, which comprise: a first compensating gas inlet structure for delivering a first compensating gas to the first gas inlet structure to enable a gas flow value entering the reaction chamber via the first gas inlet structure to be equal to a gas flow value entering the reaction chamber via the second gas inlet structure; and a second compensation gas inlet structure for delivering a second compensation gas into the reaction chamber, so that when the first gas inlet structure and the second gas inlet structure stop delivering the first precursor and the second precursor to the reaction chamber, the gas flow value entering the reaction chamber is equal to the gas flow value entering the reaction chamber through the first gas inlet structure or the second gas inlet structure. The gas inlet device and the atomic layer deposition equipment provided by the invention can fully mix the precursor and the compensation gas, and can not cause pressure fluctuation inside the reaction chamber, so that the process gas for preparing the film layer in the reaction chamber has good uniformity, and the film layer has good uniformity.

Description

Air inlet device of atomic layer deposition equipment and atomic layer deposition equipment
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an air inlet device of atomic layer deposition equipment and the atomic layer deposition equipment.
Background
Atomic Layer Deposition (ALD) is a process by which materials can be deposited on a wafer surface Layer by Layer in the form of a single Atomic film. The film layer manufactured by the atomic layer deposition process has the advantages of high purity and good uniformity, so the atomic layer deposition process is widely applied to the manufacturing of the semiconductor dynamic buffer to meet the process requirements of small size and large aspect ratio of the semiconductor dynamic buffer.
The basic principle of the atomic layer deposition process is as follows: different precursor pulses are alternately introduced into the reaction chamber to reach the surface of the wafer, so that chemical adsorption is realized on the wafer and reaction is carried out to form a deposition film; purging the reactor with a purge gas is required between the introduction of different precursor pulses to remove excess precursor and reaction products that are not adsorbed on the wafer surface, thereby ensuring that the chemical reaction occurs only on the wafer surface.
The conventional atomic layer deposition process generally heats a precursor source bottle to vaporize liquid therein into a gaseous precursor, and simultaneously introduces the gaseous precursor and a dilution gas into a reaction chamber. However, the process time of each step of atomic layer deposition is basically less than 1s and can reach 0.05s at the shortest, so that the short time is not enough to fully mix the precursor and the diluent gas, and therefore, the uniformity of the reaction gas in the reaction chamber is poor, the uniformity of the reactant adsorbed by the wafer is reduced, and the uniformity of the formed film layer is poor.
Moreover, because the two precursor pipelines are alternately and alternately opened and the purge gas pipeline is usually continuously opened, the total gas inlet flow of the reaction chamber is suddenly increased or suddenly reduced at the moment that any one precursor pipeline is opened or closed, and the internal pressure of the reaction chamber is further greatly fluctuated; and the pressure fluctuation in the reaction chamber during the atomic layer deposition process is not beneficial to the uniform diffusion of the reaction gas in the reaction chamber, so that the uniformity of the prepared film is poor.
Disclosure of Invention
The embodiment of the invention aims to solve at least one of the technical problems in the prior art, and provides a gas inlet device of atomic layer deposition equipment and the atomic layer deposition equipment, which can enable a first precursor and compensation gas to be fully mixed, and can not cause pressure fluctuation inside a reaction chamber, so that process gas used for preparing a film layer in the reaction chamber has good uniformity, and the film layer has good uniformity.
To achieve the object of the present invention, there is provided a gas inlet device of an atomic layer deposition apparatus, including:
the first gas inlet structure and the second gas inlet structure are connected with a reaction chamber of the atomic layer deposition equipment and are used for respectively conveying a first precursor and a second precursor into the reaction chamber;
the first purging structure and the second purging structure are respectively connected with the first gas inlet structure and the second gas inlet structure and are used for conveying purging gas into the reaction chamber;
a first compensating gas inlet structure connected with the first gas inlet structure and used for conveying first compensating gas to the first gas inlet structure so as to enable the gas flow value entering the reaction chamber through the first gas inlet structure to be equal to the gas flow value entering the reaction chamber through the second gas inlet structure; and
and the second compensation gas inlet structure is connected with the reaction chamber and used for delivering a second compensation gas into the reaction chamber so as to enable the gas flow value entering the reaction chamber to be equal to the gas flow value entering the reaction chamber through the first gas inlet structure or the second gas inlet structure when the first gas inlet structure and the second gas inlet structure stop delivering the first precursor and the second precursor to the reaction chamber.
Optionally, the first air inlet structure comprises a source bottle assembly, a first air supply pipeline, a first buffer unit and a first air inlet pipeline, wherein,
the source bottle assembly is used for providing the first precursor;
the first gas supply pipeline is respectively connected with the source bottle assembly and the first buffer unit and used for conveying the first precursor to the first buffer unit; a first on-off valve is arranged on the first air supply pipeline;
the first buffer unit is used for storing the first precursor;
the first air inlet pipeline is respectively connected with the first buffer unit and the reaction chamber and used for conveying the first precursor into the reaction chamber; and a second cut-off valve is arranged on the first air inlet pipeline.
Optionally, the source bottle assembly comprises a source bottle and a carrier gas line, wherein,
the air outlet end of the source bottle is connected with the air inlet end of the first air supply pipeline; the air inlet end of the source bottle is connected with the air outlet end of the air-carrying pipeline; the source bottle is used for storing the first precursor;
the gas-carrying pipeline is provided with a first gas flow controller, and the gas inlet end of the gas-carrying pipeline is used for being connected with a gas source of carrier gas and used for conveying the carrier gas to the source bottle.
Optionally, the first compensation air inlet structure includes a first compensation pipeline, an air inlet end of the first compensation pipeline is used for being connected with a compensation air source, and an air outlet end of the first compensation pipeline is connected with the first buffer unit and used for conveying a first compensation air to the first buffer unit; and a third shutoff valve and a second gas flow controller are arranged on the first compensation pipeline.
Optionally, the first air intake structure further includes a first pressure detection unit, and the first pressure detection unit is connected to the first buffer unit and is configured to detect an internal pressure of the first buffer unit.
Optionally, the second air intake structure comprises a second air supply line, a second buffer unit and a second air intake line, wherein,
the gas inlet end of the second gas supply pipeline is used for being connected with a second precursor source, and the gas outlet end of the second gas supply pipeline is connected with the second buffer unit; a third gas flow controller and a fourth shut-off valve are arranged on the second gas supply pipeline;
the second buffer unit is used for storing the second precursor;
the second air inlet pipeline is respectively connected with the second buffer unit and the reaction chamber and used for conveying the second precursor into the reaction chamber; and a fifth on-off valve is arranged on the second air inlet pipeline.
Optionally, the second air intake structure further includes a second pressure detection unit, and the second pressure detection unit is connected to the second buffer unit and is configured to detect an internal pressure of the second buffer unit.
Optionally, the second compensation air intake structure comprises a second compensation pipeline and a compensation gas bypass; wherein the content of the first and second substances,
the air inlet end of the second compensation pipeline is used for being connected with a compensation gas source; the gas outlet end of the second compensation pipeline is connected with the reaction chamber and used for conveying the second compensation gas into the reaction chamber; a fourth gas flow controller and a sixth on-off valve are arranged on the second compensating pipeline;
the gas inlet end of the compensating gas bypass is connected with the second compensating pipeline and is positioned at the upstream of the sixth on-off valve; the gas outlet end of the compensation gas bypass is used for being connected with a tail gas treatment device; and a seventh on-off valve is arranged on the compensation gas bypass.
Optionally, the first purging structure includes a first purging pipeline, an air inlet end of the first purging pipeline is used for being connected to a purging air source, and an air outlet end of the first purging pipeline is connected to the first air inlet pipeline and is used for conveying the purging gas into the first air inlet pipeline; and a fifth gas flow controller is arranged on the first sweeping pipeline.
Optionally, the second purging structure includes a second purging line, an air inlet end of the second purging line is used for being connected to a purging air source, and an air outlet end of the second purging line is connected to the second air inlet line and is used for conveying the purging gas into the second air inlet line; and a sixth gas flow controller is arranged on the second purging pipeline.
As another technical solution, an embodiment of the present invention further provides an atomic layer deposition apparatus, including a reaction chamber and a gas inlet device, where a gas distributor is disposed at a top of the reaction chamber, and the gas inlet device is connected to the gas distributor and is configured to deliver gas into the reaction chamber through the gas distributor.
The embodiment of the invention has the following beneficial effects:
according to the gas inlet device of the atomic layer deposition equipment, the first compensation gas inlet structure is arranged, the first compensation gas is output to the first gas inlet structure, the first precursor can be mixed with the first compensation gas before entering the reaction chamber, so that the first precursor is fully diluted, the process gas for forming the film layer has good uniformity, and the film layer with good uniformity can be processed. And, through setting up the second compensation air inlet structure, when first air inlet structure and second air inlet structure stop to reaction chamber transport first precursor and second precursor, to reaction chamber transport with first air inlet structure or second air inlet structure get into reaction chamber gas flow value equal second compensation gas of flow, can make reaction chamber's total inlet flow not increase suddenly or reduce suddenly, but remain a fixed value all the time, thereby can avoid reaction chamber's internal pressure to fluctuate, and then can guarantee that atomic layer deposition technology can go on steadily, thereby can improve rete homogeneity. Moreover, the gas flow value entering the reaction chamber through the first gas inlet structure is equal to the gas flow value entering the reaction chamber through the second gas inlet structure, so that the total gas inlet flow of the reaction chamber is prevented from being suddenly changed due to the fact that the first gas inlet structure and the second gas inlet structure alternately convey two precursors to the reaction chamber, and further the internal pressure of the reaction chamber is prevented from being fluctuated.
According to the atomic layer deposition equipment provided by the embodiment of the invention, by adopting the gas inlet device, not only can the first precursor and the compensation gas be fully mixed, but also the uniformity of the process gas can be improved; and the fluctuation of the internal pressure of the reaction chamber can be avoided, so that the uniformity of the film layer can be improved.
Drawings
FIG. 1 is a schematic structural diagram of a gas inlet device of an atomic layer deposition apparatus according to an embodiment of the present invention;
fig. 2 is a timing diagram of gas flow during the process of the gas inlet device according to the embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, a gas inlet device and an atomic layer deposition apparatus of an atomic layer deposition apparatus provided by the present invention are described in detail below with reference to the accompanying drawings.
Referring to fig. 1, the present embodiment provides an air inlet device of an ald apparatus, including: the device comprises a first gas inlet structure 1 and a second gas inlet structure 2, wherein the first gas inlet structure 1 and the second gas inlet structure 2 are both connected with a reaction chamber 3 of the atomic layer deposition equipment, and the first gas inlet structure 1 and the second gas inlet structure 2 are alternately opened at intervals and used for respectively conveying a first precursor and a second precursor into the reaction chamber 3. Specifically, the first precursor can be chemically adsorbed on the surface of the wafer, and the second precursor can react with the first precursor adsorbed on the surface of the wafer, so that a single-layer atomic film is formed on the surface to be processed of the wafer, and therefore the number of layers of the single-layer atomic film can be controlled by controlling the number of times that the two precursors are alternately and circularly introduced, and a film layer with the required thickness is obtained.
The gas inlet device further comprises a first purging structure 4 and a second purging structure 5, which are respectively connected with the first gas inlet structure 1 and the second gas inlet structure 2 and used for conveying purging gas into the reaction chamber 3. Specifically, the purge gas is used for blowing out the excess first precursor which is not chemically adsorbed with the surface of the wafer out of the reaction chamber 3 after the first precursor is chemically adsorbed on the surface of the wafer, so as to ensure that the chemical adsorption is only performed on the surface to be processed of the wafer, and avoid the excess first precursor from reacting with the subsequently introduced second precursor to affect the reaction between the subsequent second precursor and the first precursor on the surface of the wafer; similarly, the purge gas is further used for purging the excess second precursor in the reaction chamber 3 after the second precursor reacts with the first precursor adsorbed on the surface of the wafer, so as to ensure that the reaction only occurs on the surface to be processed of the wafer, and avoid affecting the chemical adsorption of the subsequent first precursor and the surface material of the wafer. Specifically, the purge gas may be an inert gas or a nitrogen gas with very low reactivity so that the purge gas does not react with the wafer. As shown in fig. 1, the first purging structure 4 and the second purging structure 5 are respectively connected to the first gas inlet structure 1 and the second gas inlet structure 2, so that when the first purging structure and the second purging structure respectively deliver purging gases into the reaction chamber 3, the purging gases can also pass through a part of the first gas inlet structure 1 or a part of the second gas inlet structure 2, so as to purge a part of the first gas inlet structure 1 and the second gas inlet structure 2 close to the reaction chamber 3, and prevent the first precursor or the second precursor remaining in the first gas inlet structure 1 or the second gas inlet structure 2 from affecting the progress of the atomic layer deposition process in the reaction chamber 3.
The air inlet arrangement further comprises a first compensating air inlet structure 6 and a second compensating air inlet structure 7. The first compensation gas inlet structure 6 is connected to the first gas inlet structure 1 for supplying the first compensation gas to the first gas inlet structure 1, and the first compensation gas is mixed and diluted before the first precursor enters the reaction chamber 3. The gas flow value entering the reaction chamber 3 through the first gas inlet structure 1 is equal to the gas flow value entering the reaction chamber 3 through the second gas inlet structure 2, so that the sudden change of the total gas inlet flow of the reaction chamber 3 caused by the fact that the first gas inlet structure 1 and the second gas inlet structure 2 alternately supply precursors to the reaction chamber 3 can be avoided, and further the internal pressure fluctuation of the reaction chamber 3 can be avoided, so that the uniformity of the film layer formed by the process is ensured.
The second compensation gas inlet structure 7 is connected with the reaction chamber 3 and is used for delivering a second compensation gas into the reaction chamber 3 so as to enable the total gas inlet flow value entering the reaction chamber 3 to be equal to the total gas inlet flow value entering the reaction chamber 3 through the first gas inlet structure 1 or the second gas inlet structure 2 when the first gas inlet structure 1 and the second gas inlet structure 2 stop delivering the first precursor and the second precursor to the reaction chamber 3. Since the input flow rates of the first precursor, the second precursor and the purge gas are generally constant, the first gas inlet structure 1 and the second gas inlet structure 2 are generally alternately and intermittently opened, and the first purge structure 4 and the second purge structure 5 are generally continuously opened, if the second compensation gas inlet structure 7 is not provided, the first gas inlet structure 1 or the second gas inlet structure 2 is switched from the open state to the closed state and from the closed state to the open state, which both cause instantaneous decrease and instantaneous increase of the total gas flow rate in the reaction chamber 3, which both cause large fluctuation of the internal pressure of the reaction chamber 3, and the large fluctuation of the pressure during the atomic layer deposition process is not favorable for uniform diffusion of the precursor in the reaction chamber 3, thereby causing the problem of poor uniformity of the prepared film layer; therefore, by setting the second compensation gas inlet structure 7 to make the total gas inlet flow value entering the reaction chamber 3 equal to the total gas inlet flow value entering the reaction chamber 3 through the first gas inlet structure 1 or the second gas inlet structure 2, the total gas flow of the reaction chamber 3 can be prevented from suddenly changing to cause fluctuation of the internal pressure of the reaction chamber 3 when the first gas inlet structure 1 or the second gas inlet structure 2 starts or stops delivering the first precursor or the second precursor to the reaction chamber 3, and thus the atomic layer deposition process can be stably performed, so as to improve the uniformity of the film layer.
Moreover, since the gas outlet of the reaction chamber 3 is usually provided with a pressure regulating valve, such as a butterfly valve, to regulate the internal pressure of the reaction chamber 3; if the internal pressure of the reaction chamber 3 is suddenly changed frequently, the pressure regulating valve will swing frequently, and the hardware consumption of the pressure regulating valve will increase; therefore, the air inlet device can avoid the sudden change of the internal pressure of the reaction chamber 3 by avoiding the sudden change of the total air inlet flow of the reaction chamber 3, and further can reduce the hardware consumption of the pressure regulating valve and save the maintenance cost of equipment.
In some embodiments, the first air intake structure 1 includes a source bottle assembly 11, a first air supply line 12, a first buffer unit 13, and a first air intake line 14. Wherein the source bottle assembly 11 is used to provide the first precursor.
The first gas supply pipeline 12 is respectively connected with the source bottle assembly 11 and the first buffer unit 13, and is used for conveying a first precursor to the first buffer unit 13; the first buffer unit 13 is used to store the first precursor. The first air supply line 12 is provided with a first on-off valve 121 for controlling on-off of the first air supply line 12.
The first air inlet pipeline 14 is respectively connected with the first buffer unit 13 and the reaction chamber 3, and is used for conveying a first precursor into the reaction chamber 3; the first intake pipe 14 is provided with a second on-off valve 141 for controlling on/off of the first intake pipe 14.
In some embodiments, the source vial assembly 11 includes a source vial 111 and a carrier gas line 112. Wherein, the air outlet end of the source bottle 111 is connected with the air inlet end of the first air supply pipeline 12; the gas inlet end of the source bottle 111 is connected with the gas outlet end of the gas carrying pipeline 112. The source bottle 111 is used for storing a first precursor, and specifically, the source bottle 111 can store a liquid, a gas, or a solid containing a component of the first precursor, and can convert the liquid or the solid therein into a gaseous first precursor by heating or the like. The first precursor is titanium chloride (TiCl)4) For example, TiCl4Normally in a liquid state at room temperature, the source bottle 111 can serve to store TiCl in the liquid state4And can convert it into TiCl4A gas; however, the present embodiment is not limited thereto, and the first precursor should be selected according to the actual film layer to be processed.
The gas inlet end of the carrier gas pipeline 112 is connected with a carrier gas source 31 for delivering carrier gas into the source bottle 111; a first gas flow controller 1121 is provided on the carrier gas line 112 for controlling the flow of gas flowing therethrough. The carrier gas line 112 enables the carrier gas to flow into the first gas supply line 12 together with the first precursor in the source bottle 111. The reason for this arrangement is that the first precursor generated by the source bottle 111 has high concentration but poor fluidity, and if the source bottle 111 is directly used as a gas source, the first gas supply pipeline 12 communicated with the source bottle needs to be heated and insulated to avoid the pipeline blockage caused by the condensation of the high-concentration first precursor in the first gas supply pipeline 12, and the pipeline and the valve have complicated internal structures and are not easy to purge, which greatly increases the maintenance cost; if the source bottle 111 is directly used as the gas source, a gas flow controller needs to be disposed downstream of the gas outlet end of the source bottle 111 to control the flow rate of the first precursor, and the additionally disposed gas flow controller needs to be heated and insulated to prevent the first precursor from being condensed into particles inside the gas flow controller, so as to avoid the first precursor input into the reaction chamber 3 from containing a large amount of condensed particles, which increases the manufacturing cost of the apparatus. Therefore, carrying the high-concentration first precursor in the source bottle 111 into the first gas inlet line 14 by the carrier gas can avoid causing the above-described problems, and can reduce the risk of line clogging and maintenance costs. Specifically, the carrier gas may be an inert gas or nitrogen gas with extremely low reactivity.
In some embodiments, the first compensation gas inlet structure 6 includes a first compensation pipe 61, a gas inlet end of the first compensation pipe 61 is connected to the compensation gas source 32, and a gas outlet end of the first compensation pipe 61 is connected to the first buffer unit 13, for delivering the first compensation gas to the first buffer unit 13, so that the aforementioned first precursor and the first compensation gas entering the first buffer unit 13 can be mixed therein, i.e., the first precursor can be diluted by the first compensation gas in the first buffer unit 13 before entering the reaction chamber 3. A third shut-off valve 611 and a second gas flow controller 612 are arranged on the first compensating pipe 61, wherein the second gas flow controller 612 is used for controlling the gas flow passing through the second compensating pipe; the third shut-off valve 611 is used to control the opening and closing of the first compensating pipe 61. Specifically, the first compensation gas may be an inert gas or a nitrogen gas with extremely low reactivity.
Specifically, when the second on-off valve 112 is closed, the first on-off valve 141 and the third on-off valve 611 are opened, so that the first precursor and the first compensation gas continuously enter the first buffer unit 13 and stay therein until the second on-off valve 112 is opened next time, and thus the first precursor and the first compensation gas can be sufficiently mixed before entering the reaction chamber 3, and the first precursor entering the reaction chamber 3 is relatively uniform. Preferably, the concentration of the first precursor can be adjusted by adjusting the flow rate of the first compensation gas to meet the requirements of different film thicknesses.
In some embodiments, the second air intake structure 2 includes a second air supply line 21, a second buffer unit 22, and a second air intake line 23. The gas inlet end of the second gas supply pipe 21 is connected to the second precursor source 33, the gas outlet end of the second gas supply pipe 21 is connected to the second buffer unit 22, and the second buffer unit 22 is used for storing the second precursor. The second buffer unit 22 is used for buffering the second precursor entering therein. A third gas flow controller 212 and a fourth shut-off valve 211 are provided on the second gas supply line 21, wherein the third gas flow controller 212 is used for controlling the flow of gas flowing through itself; the fourth shut-off valve 211 is used to control the on/off of the second air supply line 21.
The second air inlet pipeline 23 is respectively connected with the second buffer unit 22 and the reaction chamber 3, and is used for conveying a second precursor into the reaction chamber 3; a fifth on-off valve 231 is provided on the second intake pipe 23, and is used to control the on-off of the second intake pipe 23.
In some embodiments, the first air intake structure 1 further includes a first pressure detection unit 15. The first pressure detecting unit 15 is connected to the first buffer unit 13, and detects an internal pressure of the first buffer unit 13.
In some embodiments, the second air intake structure 2 further includes a second pressure detecting unit 24, and the second pressure detecting unit 24 is connected to the second buffer unit 22, and is configured to detect an internal pressure of the second buffer unit 22. Specifically, when the pressure values detected by the second pressure detecting unit 24 and the first pressure detecting unit 15 are equal, correspondingly, the internal pressure of the second buffer unit 22 is equal to the internal pressure of the first buffer unit 13, and under this condition, the gas flow rates output by the first gas inlet structure 1 and the second gas inlet structure 2 are also equal, so that the fluctuation of the internal pressure of the reaction chamber 3 can be avoided, and the atomic layer deposition process can be stably performed.
In some embodiments, the second compensating inlet structure 7 comprises a second compensating pipe 71 and a compensating gas bypass 72. Wherein, the gas inlet end of the second compensation pipeline 71 is connected with the compensation gas source 32; the gas outlet end of the second compensation pipeline 71 is connected with the reaction chamber 3, so as to convey a second compensation gas into the reaction chamber 3; a fourth gas flow controller 711 and a sixth on-off valve 712 are disposed on the second compensation pipeline 71, specifically, the fourth gas flow controller 711 is used for controlling the flow of the gas flowing through itself, and making the flow value equal to the flow value of the first precursor (or the second precursor); the sixth on-off valve 712 is used to control the on-off of the second compensation pipe 71. Specifically, the second compensation gas may be an inert gas or a nitrogen gas with extremely low reactivity.
The intake end of the compensating gas bypass 72 is connected to the second compensating pipe 71 and is located upstream of the sixth cut-off valve 712; the gas outlet end of the compensation gas bypass 72 is used for being connected with a tail gas treatment device; a seventh on-off valve 721 is provided in the compensating gas bypass 72 to control on-off of the compensating gas bypass 72.
Specifically, the seventh on-off valve 721 is configured to be closed when the sixth on-off valve 712 is opened, and is opened when the sixth on-off valve 712 is closed, so that after the second compensating pipeline 71 is closed, the second compensating gas flows into the exhaust gas collecting unit 34 through the compensating gas bypass 72 to assist the second compensating pipeline 71 in pressure relief, and meanwhile, the exhaust gas collecting unit 34 can be purged to prevent the exhaust gas collecting unit 34 from being blocked by condensate generated by the exhaust gas.
In some embodiments, the first purge structure 4 comprises a first purge line 41, an inlet end of the first purge line 41 is connected to a purge gas source (the purge gas source and the compensating gas source 32 are the same source in fig. 1), and an outlet end of the first purge line 41 is connected to the first gas inlet line 14, for delivering purge gas into the first gas inlet line 14; a fifth gas flow controller 411 is provided on the first purge line 41 for controlling the flow of gas flowing through itself.
In some embodiments, the second purge structure 5 comprises a second purge line 51, an inlet end of the second purge line 51 is used for connecting with a purge gas source, and an outlet end of the second purge line 51 is connected with the second inlet line 23 for delivering purge gas into the second inlet line 23; a sixth gas flow controller 511 is provided on the second purge line 51, the sixth gas flow controller 511 being for controlling the flow of gas through itself.
Specifically, in the process, the first purge line 41 and the second purge line 51 are kept in an open state, so that when the first gas inlet structure 1 or the second gas inlet structure 2 delivers the first precursor or the second precursor to the reaction chamber 3, purge gas is continuously input to the reaction chamber 3 to assist in diluting the precursor; and purging the reaction chamber 3 when the first and second gas inlet structures 1 and 2 stop supplying the precursor to the reaction chamber 3.
It should be noted that the carrier gas source, the purge gas source, and the compensation gas source of the atomic layer deposition apparatus are all used to deliver inert gas or extremely low-activity nitrogen gas that does not react with the wafer in the reaction chamber 3, so that the plurality of gas sources may share the same gas source.
Taking the process of forming a titanium nitride (TiN) film by an atomic layer deposition method as an example, the present embodiment further provides an atomic layer deposition process flow for using the above air intake device to intake air. Specifically, in the process, the first precursor is titanium chloride (TiCl)4) Gas, the second precursor being ammonia (NH)3) The gas, carrier gas, compensation gas and purge gas are all nitrogen (N)2) A gas. The process flow specifically comprises the following steps:
step S1: the second 141, first 121 and third 611 on-off valves are opened to let the carrier gas enter the TiCl-containing vessel4Source bottle 111 of liquid, and with TiCl4The gas enters the first buffer unit 13 together and flows into the reaction chamber 3; opening a fourth break valve 211, and introducing a second precursor into the second buffer unit 22 so as to facilitate the subsequent process; opening a seventh on-off valve 721 to allow the second make-up gas to be pumped away by the off-gas collection unit 34; the remaining valves are closed. Specifically, in this step, the pressure inside the reaction chamber 3 may be in a range of 0.5Torr to 5 Torr; the flow rate of the carrier gas can be 50sccm to 500sccm, and preferably the flow rate of the carrier gas is 100 sccm.
Step S2: turn on the sixthThe valve 721 is switched on and off to let the second compensation gas into the reaction chamber 3; the first on-off valve 121 and the third on-off valve 611 are opened, and the mixed gas (N) of the carrier gas and the first precursor is introduced into the first buffer unit 132-TiCl4Mixed gas) and the first compensation gas to be sufficiently mixed in the first buffer unit 13 for a subsequent process; opening a fourth break valve 211 to introduce a second precursor into the second buffer unit 22 so as to facilitate subsequent processes; the remaining valves are closed. Specifically, in this step, the first purge line 41 and the second purge line 51 are both kept normally open, and the flow range of the purge gas can be 1000sccm to 5000 sccm; in addition, the flow range of the second compensation gas can be 1000sccm to 5000 sccm.
Step S3: opening the fourth on-off valve 211 and the fifth on-off valve 231 to allow the second precursor to pass into the reaction chamber 3; the first on-off valve 121 and the third on-off valve 611 are opened, and the mixed gas (N) of the carrier gas and the first precursor is introduced into the first buffer unit 132-TiCl4Mixed gas) and the first compensation gas to be sufficiently mixed in the first buffer unit 13 for a subsequent process; opening a seventh on-off valve 721 to allow the second make-up gas to be pumped away by the off-gas collection unit 34; the remaining valves are closed. Specifically, in this step, the flow rate of the second precursor may be set to 1000sccm to 4000 sccm.
Step S4: opening the sixth on/off valve 712 to allow the second compensation gas to enter the reaction chamber 3; the second on-off valve 141 and the third on-off valve 611 are opened, and the mixed gas (N) of the carrier gas and the first precursor is introduced into the first buffer unit 132-TiCl4Mixed gas) and a first compensation gas to facilitate subsequent processes; opening a fourth break valve 211 to introduce a second precursor into the second buffer unit 22 so as to facilitate subsequent processes; the remaining valves are closed. Specifically, in this step, the first purge line 41 and the second purge line 51 are both kept normally open, and the flow range of the purge gas can be 1000sccm to 5000 sccm; the flow range of the second compensation gas can be 1000sccm to 5000 sccm.
After the steps S1-S4 are completed, a TiN monoatomic film can be formed on the surface of the wafer; if the above steps S1-S4 are performed as one cycle, the number of times this cycle is performed is the number of layers of the TiN monoatomic film to be formed, and thus the thickness of the film layer formed on the wafer can be controlled by controlling the number of times of the cycle.
As shown in fig. 2, the present embodiment further provides a timing chart of gas flow rate when the exhaust apparatus provided by the present invention is used for performing a process. As can be seen from fig. 2, after the process is started, the first precursor and the second precursor with equal flow rates are alternately and alternately delivered to the reaction chamber, and when the first precursor and the second precursor are both stopped, the second compensation gas with equal flow rates is delivered to the reaction chamber, so as to avoid causing pressure fluctuation inside the reaction chamber.
As another technical solution, as shown in fig. 1, the embodiment further provides an atomic layer deposition apparatus, which includes a reaction chamber 3 and a gas inlet device, a gas distributor 35 is disposed at a top of the reaction chamber 3, and a plurality of gas passages are disposed on the gas distributor 35 and used for uniformly introducing gas into the reaction chamber 3. The gas inlet means is connected to the gas distributor 35 to uniformly supply the gas into the reaction chamber 3 through the gas distributor 35, wherein the gas inlet means is the gas inlet means described in the above embodiments.
The gas inlet device of the atomic layer deposition equipment provided by the embodiment outputs the first compensation gas to the first gas inlet structure by arranging the first compensation gas inlet structure, so that the first precursor can be mixed with the first compensation gas before entering the reaction chamber, the first precursor is fully diluted, the process gas for forming the film layer has good uniformity, and the film layer with good uniformity can be processed. And, through setting up the second compensation air inlet structure, when first air inlet structure and second air inlet structure stop to reaction chamber transport first precursor and second precursor, to reaction chamber transport with first air inlet structure or second air inlet structure get into reaction chamber gas flow value equal second compensation gas of flow, can make reaction chamber's total inlet flow not increase suddenly or reduce suddenly, but remain a fixed value all the time, thereby can avoid reaction chamber's internal pressure to fluctuate, and then can guarantee that atomic layer deposition technology can go on steadily, thereby can improve rete homogeneity. Moreover, the gas flow value entering the reaction chamber through the first gas inlet structure is equal to the gas flow value entering the reaction chamber through the second gas inlet structure, so that the total gas inlet flow of the reaction chamber is prevented from being suddenly changed due to the fact that the first gas inlet structure and the second gas inlet structure alternately convey two precursors to the reaction chamber, and further the internal pressure of the reaction chamber is prevented from being fluctuated.
According to the atomic layer deposition equipment provided by the embodiment, by adopting the gas inlet device, the first precursor and the compensation gas can be fully mixed, so that the uniformity of the process gas can be improved; and the fluctuation of the internal pressure of the reaction chamber can be avoided, so that the uniformity of the film layer can be improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims (11)

1. An air inlet device of an atomic layer deposition device is characterized by comprising:
the first gas inlet structure and the second gas inlet structure are connected with a reaction chamber of the atomic layer deposition equipment and are used for respectively conveying a first precursor and a second precursor into the reaction chamber;
the first purging structure and the second purging structure are respectively connected with the first gas inlet structure and the second gas inlet structure and are used for conveying purging gas into the reaction chamber;
a first compensating gas inlet structure connected with the first gas inlet structure and used for conveying first compensating gas to the first gas inlet structure so as to enable the gas flow value entering the reaction chamber through the first gas inlet structure to be equal to the gas flow value entering the reaction chamber through the second gas inlet structure; and
and the second compensation gas inlet structure is connected with the reaction chamber and used for delivering a second compensation gas into the reaction chamber so as to enable the gas flow value entering the reaction chamber to be equal to the gas flow value entering the reaction chamber through the first gas inlet structure or the second gas inlet structure when the first gas inlet structure and the second gas inlet structure stop delivering the first precursor and the second precursor to the reaction chamber.
2. The gas inlet arrangement for an atomic layer deposition apparatus according to claim 1, wherein the first gas inlet arrangement comprises a source bottle assembly, a first gas supply line, a first buffer unit and a first gas inlet line, wherein,
the source bottle assembly is used for providing the first precursor;
the first gas supply pipeline is respectively connected with the source bottle assembly and the first buffer unit and used for conveying the first precursor to the first buffer unit; a first on-off valve is arranged on the first air supply pipeline;
the first buffer unit is used for storing the first precursor;
the first air inlet pipeline is respectively connected with the first buffer unit and the reaction chamber and used for conveying the first precursor into the reaction chamber; and a second cut-off valve is arranged on the first air inlet pipeline.
3. The gas inlet apparatus for an atomic layer deposition apparatus according to claim 2, wherein the source bottle assembly comprises a source bottle and a carrier gas line, wherein,
the air outlet end of the source bottle is connected with the air inlet end of the first air supply pipeline; the air inlet end of the source bottle is connected with the air outlet end of the air-carrying pipeline; the source bottle is used for storing the first precursor;
the gas-carrying pipeline is provided with a first gas flow controller, and the gas inlet end of the gas-carrying pipeline is used for being connected with a gas source of carrier gas and used for conveying the carrier gas to the source bottle.
4. The gas inlet device of the atomic layer deposition equipment according to claim 2 or 3, wherein the first compensation gas inlet structure comprises a first compensation pipeline, a gas inlet end of the first compensation pipeline is used for being connected with a compensation gas source, and a gas outlet end of the first compensation pipeline is connected with the first buffer unit and used for delivering a first compensation gas to the first buffer unit; and a third shutoff valve and a second gas flow controller are arranged on the first compensation pipeline.
5. The gas inlet device of an atomic layer deposition apparatus according to claim 2, wherein the first gas inlet structure further comprises a first pressure detection unit connected to the first buffer unit for detecting an internal pressure of the first buffer unit.
6. The gas inlet arrangement for an atomic layer deposition apparatus according to claim 1, wherein the second gas inlet arrangement comprises a second gas supply line, a second buffer unit and a second gas inlet line, wherein,
the gas inlet end of the second gas supply pipeline is used for being connected with a second precursor source, and the gas outlet end of the second gas supply pipeline is connected with the second buffer unit; a third gas flow controller and a fourth shut-off valve are arranged on the second gas supply pipeline;
the second buffer unit is used for storing the second precursor;
the second air inlet pipeline is respectively connected with the second buffer unit and the reaction chamber and used for conveying the second precursor into the reaction chamber; and a fifth on-off valve is arranged on the second air inlet pipeline.
7. The gas inlet device of an atomic layer deposition apparatus according to claim 6, wherein the second gas inlet structure further comprises a second pressure detection unit connected to the second buffer unit for detecting an internal pressure of the second buffer unit.
8. The gas inlet device of the atomic layer deposition apparatus according to claim 1, wherein the second compensation gas inlet structure comprises a second compensation pipe and a compensation gas bypass; wherein the content of the first and second substances,
the air inlet end of the second compensation pipeline is used for being connected with a compensation gas source; the gas outlet end of the second compensation pipeline is connected with the reaction chamber and used for conveying the second compensation gas into the reaction chamber; a fourth gas flow controller and a sixth on-off valve are arranged on the second compensating pipeline;
the gas inlet end of the compensating gas bypass is connected with the second compensating pipeline and is positioned at the upstream of the sixth on-off valve; the gas outlet end of the compensation gas bypass is used for being connected with a tail gas treatment device; and a seventh on-off valve is arranged on the compensation gas bypass.
9. The gas inlet device for the atomic layer deposition equipment according to claim 2, wherein the first purge structure comprises a first purge line, a gas inlet end of the first purge line is used for connecting with a purge gas source, and a gas outlet end of the first purge line is connected with the first gas inlet line and used for conveying the purge gas into the first gas inlet line; and a fifth gas flow controller is arranged on the first sweeping pipeline.
10. The gas inlet device of the atomic layer deposition equipment according to claim 6, wherein the second purging structure comprises a second purging line, a gas inlet end of the second purging line is used for connecting with a purging gas source, and a gas outlet end of the second purging line is connected with the second gas inlet line and used for conveying the purging gas into the second gas inlet line; and a sixth gas flow controller is arranged on the second purging pipeline.
11. An atomic layer deposition apparatus, comprising a reaction chamber and a gas inlet device, wherein a gas distributor is arranged at the top of the reaction chamber, and the gas inlet device is connected with the gas distributor and used for delivering gas into the reaction chamber through the gas distributor, and the gas inlet device is according to any one of claims 1-10.
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