CN113412539A - 半导体装置 - Google Patents
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Abstract
本发明的作为半导体装置的功率半导体模块包括半导体元件(155)、以及与半导体元件(155)相对地配置并经由焊料(162)连接到半导体元件(155)的引线框(318)。引线框(318)具有包含与半导体元件(155)相对的面的顶面(331)、以及与顶面(331)构成规定的角度并且连接到顶面(331)的周缘部(333)的侧面(334)。引线框(318)的顶面包含与焊料(162)相接的焊料面(332)、以及与焊料面(332)相比焊料(162)更难浸润的阻焊面。该阻焊面包围焊料面(332)的周围来形成。由此,当在半导体装置中对半导体元件和引线框进行焊料接合时,能适当地控制焊料浸润扩散的区域。
Description
技术领域
本发明涉及半导体装置。
背景技术
在用于车载用逆变器等的功率模块中,为了提高散热性能,开发了从两面冷却半导体元件的双面冷却功率模块。例如,在专利文献1中,公开了一种半导体装置,所述半导体装置包括:第一金属部,该第一金属部具有第一面和位于该第一面的相反侧的第二面;第二金属部,该第二金属部具有与所述第一金属部的所述第二面相对的第三面以及位于该第三面的相反侧的第四面,并且该第二金属部包含突出部,该突出部具有从所述第三面突出并且与所述第一金属部的所述第一面几乎齐平或从该第一面突出的第五面;半导体芯片,该半导体芯片设置在所述第一金属部的所述第二面与所述第二金属部的所述第三面之间;以及树脂,该树脂设置在所述半导体芯片的周围,以使所述第一金属部的所述第一面和所述第二金属部的所述第四面露出。
现有技术文献
专利文献
专利文献1:日本专利特开2016-146457号公报
发明内容
发明所要解决的技术问题
在专利文献1所记载的半导体装置中,半导体芯片的两面用焊料分别与金属板接合。连接到半导体芯片的一侧的面的金属板具有接合部朝向半导体芯片突出的凸形状。在这种结构中,当将半导体芯片和金属板进行焊料接合时,焊料容易浸润在金属板上呈凸形状的部分的侧面。因此,难以适当地控制焊料浸润扩散的区域,从而导致质量和生产性的降低。
解决技术问题所采用的技术方案
本发明的半导体装置包括:半导体元件;以及第一引线框,该第一引线框与所述半导体元件相对地进行配置,并经由第一焊料与所述半导体元件相连接,所述第一引线框具有:顶面,该顶面包含与所述半导体元件相对的面;以及侧面,该侧面与所述顶面构成规定的角度,并与所述顶面的周缘部相连,所述第一引线框的所述顶面包含:与所述第一焊料相接的焊料面;以及与所述焊料面相比所述第一焊料更难浸润的阻焊面,所述阻焊面包围所述焊料面的周围来形成。
发明效果
根据本发明,当在半导体装置中对半导体元件和引线框进行焊料接合时,能适当地控制焊料浸润扩散的区域。
附图说明
图1是本发明的一个实施方式所涉及的功率半导体模块的外观立体图。
图2是示出本发明的一个实施方式所涉及的功率半导体模块的内部结构的立体图。
图3是本发明的一个实施方式所涉及的功率半导体模块的展开图。
图4是示出本发明的一个实施方式所涉及的功率半导体模块的内部结构的俯视图。
图5是功率半导体模块的剖视图和周缘部附近的放大图。
具体实施方式
下面参考附图,说明本发明的一个实施方式的半导体装置的应用例即功率半导体模块。
图1是本发明的一个实施方式所涉及的功率半导体模块300的外观立体图。图2是示出本发明的一个实施方式所涉及的功率半导体模块300的内部结构的立体图,示出了从图1中除去密封树脂350的结构。图3示出了本发明的一个实施方式所涉及的功率半导体模块300的展开图,并且主要示出了图2的引线框315与引线框318之间以及引线框316与引线框319之间的结构。图4是示出本发明的一个实施方式所涉及的功率半导体模块300的内部结构的俯视图,并且对应于图2。
如图2至4所示,半导体元件155、156在从两面被夹在分别使用了铜、铜合金等的金属制的引线框315与引线框318之间的状态下,在两面侧分别接合并固定到这些引线框。此外,半导体元件157、158在从两面被夹在分别使用了铜、铜合金等的金属制的引线框316与引线框319之间的状态下,在两面侧分别接合并固定到这些引线框。此外,半导体元件155、157经由接合线327(参照图2),分别连接到信号引线325U、325L。通过使各引线框的导热面323露出并利用密封树脂350一体地密封上述各半导体元件、各引线框和各信号引线(参照图1),从而组装功率半导体模块300。
半导体元件155、156例如是IGBT和二极管,并且对应于逆变器的上下桥臂串联电路中的上桥臂。半导体元件157、158也同样地例如是IGBT和二极管,并且对应于逆变器的上下桥臂串联电路中的下桥臂。根据从未图示的驱动电路输入的规定的驱动信号,半导体元件155和半导体元件157分别在规定的定时进行开关动作,从而输入到功率半导体模块300的直流电力被转换为交流电力并被输出。或者,半导体元件155、157可以设为不是IGBT而是FET。以下,将以半导体元件155、157是IGBT并且半导体元件156、158是二极管的情况为例进行说明,然而,当半导体元件155、157是FET的情况也同样。
另外,图2~图4示出了功率半导体模块300中分别各具有半导体元件155~157中的一个的结构示例。然而,本发明申请所涉及的功率半导体模块的结构不限于此。例如,可以各分别并联连接有多个各半导体元件来使用。在下面的实施方式中,设为包含所有这些结构来进行说明。
在功率半导体模块300中设置有直流正极布线315A和直流负极布线319A,作为用于输入从未图示出的直流电源提供的直流电力的直流汇流条。此外,设置有交流布线320作为用于向未图示的电动机提供交流电力的交流汇流条。在本实施方式中,直流正极布线315A和引线框315一体形成,将直流负极布线319A和引线框319进行连接。此外,交流布线320和引线框316一体形成,并且将交流布线320和引线框316与引线框318进行连接。此外,设置有用于从未图示的驱动电路输入驱动信号的信号引线325U、325L。
这里,将与电路相关联地说明半导体元件和引线框的配置。在该实施方式中,引线框315和引线框316配置成大致相同的平面状。例如,将作为IGBT的半导体元件155的集电极电极和例如作为二极管的半导体元件156的阴极电极固定到引线框315上。例如,将作为IGBT的半导体元件157的集电极电极和例如作为二极管的半导体元件158的阴极电极固定到引线框316上。此外,引线框318和引线框319配置成几乎相同的平面状。例如,将作为IGBT的半导体元件155的发射极电极和例如作为二极管的半导体元件156的阳极电极固定到引线框318上。例如,将作为IGBT的半导体元件157的发射极电极和例如作为二极管的半导体元件158的阳极电极固定到引线框319上。在上述各个引线框中,如图1所示,将导热面323设置在与各个半导体元件固定的固定面的相反侧。在图1中,仅示出了配置在正面侧的引线框318、319的导热面323,但是同样地,在背面侧的引线框315、316也同样地设置了导热面323。
各个半导体元件具有板状的扁平结构,并且各个电极形成在其正面或背面上。因此,如图2、图3所示,引线框315与引线框318、以及引线框316与引线框319经由各半导体元件,即夹着各半导体元件,配置成大致平行地相对的叠层状。引线框316与引线框318电连接。通过这种连接,上桥臂电路与下桥臂电路电连接,形成上下桥臂串联电路。例如,当半导体元件155、157设为IGBT时,这些栅极电极分别连接到信号引线325U、325L,驱动信号经由各个信号引线从驱动电路输入。
如图3所示,各个半导体元件的电极与相对应的各引线使用焊料161、162进行电接合并进行热接合而固定。具体地说,半导体元件155、156分别经由焊料161与引线框315接合,并且分别经由焊料162与引线框318接合。半导体元件157、158分别经由焊料161与引线框316接合,并且分别经由焊料162与引线框319接合。如上所述,直流正极布线315A与引线框315一体形成,直流负极布线319A与引线框319连接。
接下来,参照图5说明功率半导体模块300中的各个半导体元件与各个引线框之间的接合结构的详细情况。图5(a)是示出功率半导体模块300的截面A-A的剖视图,图5(b)是图5(a)的周缘部333附近的放大图。下面,作为代表示例,图1的外观立体图中所示的截面A-A横切半导体元件155,并且将以该半导体元件155与引线框315和318之间的接合结构作为示例来说明本实施方式的功率半导体模块300中的各个半导体元件与引线框之间的接合结构。其中,半导体元件156与引线框315和318之间的接合结构、半导体元件157、158与引线框316和319之间的接合结构也具有同样的特征。
如图5(a)所示,半导体元件155具有彼此平行的一对面155A、155B,并且在这一对面中一侧的面155A上设置有形成有集电极电极的集电极电极面。此外,另一侧的面155B上设置有形成有发射极电极的发射极电极面。
引线框315与半导体元件155的集电极电极面相对地进行配置,并经由焊料161与半导体元件155的集电极电极面连接。引线框318与半导体元件155的发射极电极面相对地进行配置,并经由焊料162与半导体元件155的发射极电极面连接。因此,半导体元件155的集电极电极经由焊料161和引线框315电连接到直流正极布线315A,半导体元件155的发射极电极经由焊料162、引线框318和引线框316电连接到交流布线320。
引线框318具有与焊料162接合的部分朝向半导体元件155突出的凸形状,并且具有包含与半导体元件155相对的面的顶面331(图中由双点划线表示的范围内的面)和与该顶面331呈规定的角度并与顶面331的周缘部333相连的侧面334。另外,在图5的示例中,侧面334与顶面331构成的角度为直角,即,大约90°,但是侧面334也可以形成为与顶面331构成90°以外的角度。但是,考虑到在引线框318上形成侧面334时的加工的容易性等,侧面334与顶面331构成的角度优选为90°以上。
在引线框318的顶面331上,在与焊料162相接的范围内形成焊料面332。此外,围绕该焊料面332的周围形成有与焊料面332相比焊料162更难浸润的阻焊面。在图5中,用比焊料面332粗的线示出在引线框318中形成阻焊面的范围。即,在图5所示的示例中,除了顶面331的周缘部333之外,在侧面334及其周缘部中也形成有阻焊面。然而,阻焊面只要形成为至少在引线框318的顶面331上包围焊料面332的周围即可,也可以不包含侧面334及其周边部。
如图5(b)所示,在焊料面332与侧面334之间形成以规定的R值形成的曲面。引线框318的侧面334经由该曲面与顶面331的周缘部333相连。因此,可以通过冲压加工形成引线框318,从而提高了加工性。即,当顶面331与侧面334之间的接缝不是曲面而是边缘形状时,由于需要用于在冲压加工后形成边缘的追加加工,或者需要采用能够形成边缘的切削加工等其它加工方法,因此加工性差。另一方面,通过在顶面331与侧面334之间的接缝处允许规定的R值,能进行冲压加工,并且能大大提高加工性。另外,R值根据引线框318的厚度、材料等来确定,例如为0.2~0.5mm左右。
在引线框318的顶面331上,形成在焊料面332的周围的阻焊面形成为至少包含上述曲面。具体地说,例如,如图5(b)所示,在将从分别延长顶面331和侧面334后所获得的延长线彼此的交点到形成在周缘部333上的阻焊面与焊料面332之间的边界为止的长度设为x时,满足x≥R的关系。
此外,如图5(a)所示,在将顶面331的长度设为L的情况下,若考虑到引线框318和半导体元件155之间的接合部的导电性,则优选为使顶面331上的焊料面332的范围尽可能大,而不使上述长度x太大。具体而言,优选为例如设定x的值,使得例如x为L的1/3以下,即x≤L/3的关系成立。
在引线框318中,阻焊面能通过使用例如金属表面的氧化膜或环氧树脂等焊料抗蚀剂材料来形成。当形成氧化膜作为阻焊面时,为了确保相对于焊料162较低的浸润性,氧化膜的厚度优选为例如1nm以上。此外,在氧化膜和焊料抗蚀剂材料中的任一种的情况下,通过在引线框318中去除形成它们的表面的一部分,从而能形成焊料162比阻焊面更容易浸润的焊料面332。在这种情况下,在焊料面332上形成进行了去除表面加工的加工痕迹。作为表面去除加工,例如可以使用激光加工等。
根据以上说明的本发明的一个实施方式,起到以下的作用效果。
(1)作为半导体装置的功率半导体模块300包括半导体元件155、以及引线框318,该引线框318与半导体元件155相对地进行配置,经由焊料162与半导体元件155相连接。引线框318具有顶面331,该顶面331包含与半导体元件155相对的面;以及侧面334,该侧面334与顶面331构成规定的角度,并与顶面331的周缘部333相连。引线框318的顶面包含与焊料162相接的焊料面332;以及与焊料面332相比焊料162更难浸润的阻焊面。该阻焊面包围焊料面332的周围来形成。因此,当在作为半导体装置的功率半导体模块300中对半导体元件155和引线框318进行焊料接合时,能适当地控制焊料浸润扩散的区域。
(2)功率半导体模块300还包括经由焊料161与半导体元件155相连接的引线框315。半导体元件155具有彼此平行的一对面155A、155B,发射极电极面设置在这一对面中的一侧的面155B上,集电极电极面设置在另一侧的面155A上。引线框318与发射极电极面相对地进行配置,并经由焊料162与半导体元件155的发射极电极面连接。引线框315与集电极电极面相对地进行配置,并经由焊料161与半导体元件155的集电极电极面连接。因此,能构成小型且具有高散热性的功率半导体模块300。
(3)引线框318的侧面334经由以规定的R值形成的曲面与顶面331的周缘部333连接。阻焊面形成为包含该曲面。因此,能使引线框318的加工性大大提高。
另外,在上述实施方式中,说明了各半导体元件被分别从两个引线框的两面侧夹持并接合的半导体装置的例子,但是本发明不限于此。如果引线框至少与半导体元件的一侧的面相对地配置,并且在该引线框的顶面上形成与焊料相接的焊料面,并且包围焊料面的周围地形成与焊料面相比焊料更难浸润的阻焊面,则包含在本发明的应用范围内。
以上说明的各实施方式和各种变形例只是一例,只要不破坏本发明的特征,本发明并不限定于这些内容。另外,虽然在上述中说明了各种实施方式和变形例,但是本发明并不限定于这些内容。在本发明的技术构思的范围内考虑到的其他方式也包括在本发明的范围内。
标号说明
155、156、157、158半导体元件
161、162焊料
300功率半导体模块
315、316、318、319引线框
331顶面
332焊料面
333周缘部
334侧面
Claims (7)
1.一种半导体装置,其特征在于,包括:
半导体元件;以及
第一引线框,该第一引线框与所述半导体元件相对地进行配置,并经由第一焊料与所述半导体元件相连接,
所述第一引线框具有:顶面,该顶面包含与所述半导体元件相对的面;以及侧面,该侧面与所述顶面构成规定的角度,并与所述顶面的周缘部相连,
所述第一引线框的所述顶面包含:与所述第一焊料相接的焊料面;以及与所述焊料面相比所述第一焊料更难浸润的阻焊面,
所述阻焊面包围所述焊料面的周围来形成。
2.如权利要求1所述的半导体装置,其特征在于,
还包括经由第二焊料与所述半导体元件相连接的第二引线框,
所述半导体元件具有彼此平行的一对面,在所述一对面中一侧的面上设有第一电极面,另一侧的面上设有第二电极面,
所述第一引线框与所述第一电极面相对地进行配置,并经由所述第一焊料与所述半导体元件的所述第一电极面相连接,
所述第二引线框与所述第二电极面相对地进行配置,并经由所述第二焊料与所述半导体元件的所述第二电极面相连接。
3.如权利要求1或2所述的半导体装置,其特征在于,
所述第一引线框的所述侧面经由以规定的R值形成的曲面与所述顶面的周缘部相连,
所述阻焊面形成为包含所述曲面。
4.如权利要求1或2所述的半导体装置,其特征在于,
在所述阻焊面上形成有氧化膜。
5.如权利要求4所述的半导体装置,其特征在于,
所述氧化膜的厚度为1nm以上。
6.如权利要求1或2所述的半导体装置,其特征在于,
在所述焊料面上形成有对表面进行了去除加工的加工痕迹。
7.如权利要求6所述的半导体装置,其特征在于,
所述去除加工是激光加工。
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