CN113411129B - Duplex system for optical communication - Google Patents
Duplex system for optical communication Download PDFInfo
- Publication number
- CN113411129B CN113411129B CN202110674357.8A CN202110674357A CN113411129B CN 113411129 B CN113411129 B CN 113411129B CN 202110674357 A CN202110674357 A CN 202110674357A CN 113411129 B CN113411129 B CN 113411129B
- Authority
- CN
- China
- Prior art keywords
- chip
- integrated
- switch unit
- bias voltage
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/25—Arrangements specific to fibre transmission
- H04B10/2589—Bidirectional transmission
- H04B10/25891—Transmission components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/29—Repeaters
- H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
- H04B10/297—Bidirectional amplification
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a duplex system for optical communication, which consists of an integrated optoelectronic chip (1), a laser (2), a mode switching control circuit (3), a first bias voltage circuit (4), a trans-impedance amplifier (5), a signal processing module (6), an optical fiber (7), a grounding interface (8), a first switch unit (9), a second switch unit (10) and a second bias voltage circuit (11). The invention integrates two functions of optical signal amplification and photoelectric detection into the same device, so that the chip has more functions, lower power consumption and production cost, smaller space occupation and greatly improved reliability, and the chip is controlled by an external control circuit to work in different working modes; the optical fiber sensing device can be widely applied to the fields of optical fiber communication, optical fiber sensing, photoelectric detection and the like.
Description
Technical Field
The invention designs a duplex system for optical communication, the invention can be widely applied to optical fiber communication, optical fiber sensing and photoelectric measurement; belongs to the technical field of optical fiber communication.
Background
In recent years, with the rapid development of electronic technology, the degree of integration of integrated circuits has been increasing, the switching speed of devices has been also increasing, and the speed of electronics has been brought to the utmost, and the position of optoelectronic devices has become increasingly important in order to achieve high speed, wide bandwidth, and large capacity of information acquisition, access, processing, and application in information systems. However, in terms of current development, the low integration level of the optoelectronic device is a difficult problem limiting the development of the optoelectronic device, and by researching the duplex device based on the optoelectronic integrated chip, the functional limitation of the discrete device is broken through, so that the functions of the chip are improved, the power consumption is reduced, the production cost is lower, the space occupation is smaller, and the reliability is greatly improved.
The working principle of the quantum well structure integrated optoelectronic chip is as follows: the active area is a gain area, when a forward current is injected and reaches a certain value, free electrons in an N area are increased and continuously enter a quantum well to be compounded with holes, energy is released in a photon form, the photons form stimulated radiation under the induction of an input optical signal, the released photons and incident photons have the same frequency, the same direction, the same phase, the same polarization direction and the same mode, and the photons are continuously induced to generate stimulated radiation when advancing continuously, so that more new photons are generated, and the input optical signal is amplified; for a quantum well structure made of a wide band gap material, through the design of the quantum well structure and doping, a specific energy level is formed in the quantum well, and electrons in the quantum well integrated photoelectronic chip are excited from a ground state to an excited state under the action of incident light of a waveguide layer; by applying a reverse bias voltage, electrons in an excited state form a current, and a photocurrent signal can be obtained.
For a duplex system for optical communication, moon-ashush et al disclosed in 2009 "an Integrated optoelectronic Device including a semiconductor optical amplifier and a photodiode" (chinese patent (CN 200610110661.5), which made a optoelectronic Integrated receiving Device for optical signals through inpas ga material, and Integrated the optical amplifier and the photodiode in one Device, realizing high integration of the optoelectronic Device; lexin et al disclosed in 2017 a "micro underwater visible Light communication duplex Device based on heterogeneous bonding and a preparation method" (Chinese patent (CN 201710240402.2), which realizes simultaneous duplex underwater visible Light communication by integrating a thin film LED blue Light emitting Device and a photoelectric sensor Device with a silicon substrate nitride wafer and an N-type doped silicon wafer; the Xin Li et al uses InP material double etching process to prepare AlInGaAs MQW diode to connect through straight waveguide, and integrates the Light emitter and the photodiode to realize the Multiple functions of Integrated photoelectric Device (Li, xin, et al, alInGaAs Multiple Quantum Well-Integrated Device with Multiple-function Light Emission/Detection and Electro-optical Modulation in the Near-Integrated range ACS Omega,2021.612 The function of the integrated photoelectric device of the device and the photodiode is realized singly; (2) The duplex device for visible light communication realized by the heterogeneous bonding mode has a complex manufacturing process and is only suitable for a blue light wave band; (3) By adopting the technology of carrying out monolithic integration on the AlInGaAs MQW diode, the device occupies too large area and has poor applicability; (4) The optical amplifier and the photodiode are integrated in a single chip by a double-waveguide ATG technology, the main function of the optical amplifier is applied to an optical receiver, and the function is relatively single.
In order to solve the above problems, the invention discloses a duplex system for optical communication, which can be widely applied to the fields of optical fiber communication, optical fiber sensing, photoelectric measurement and the like; the device and the system realize the integration of A photoelectric detection or B optical signal amplification of two working modes of the device by utilizing the quantum well structure integrated photoelectronic chip to be matched with the external mode switching control circuit, realize the flexible and convenient work of the integrated photoelectronic chip under the A photoelectric detection or B optical signal amplification mode through the control of the mode switching control circuit on the switch unit, realize the high integration level of the photoelectronic device, enrich the functions of the chip, reduce the loss of optical signals in the light splitting and coupling processes and reduce the power consumption.
Disclosure of Invention
The invention aims to provide a duplex system for optical communication, which can be widely applied to the fields of optical fiber communication, optical fiber sensing, photoelectric measurement and the like;
a duplex system for optical communication is composed of an integrated optoelectronic chip (1), a laser (2), a mode switching control circuit (3), a first bias voltage circuit (4), a trans-impedance amplifier (5), a signal processing module (6), an optical fiber (7), a grounding interface (8), a first switch unit (9), a second switch unit (10) and a second bias voltage circuit (11).
The invention is realized in the following way that an integrated photoelectron chip (1) is packaged in the integrated photoelectron chip package, one side of an optical fiber (7) is coupled with the integrated photoelectron chip (1), the other side is connected with an external optical path, one end of a laser (2) is connected with a mode switching control circuit (3), the mode switching control circuit (3) provides working voltage for the laser (2) to work, and the other end is coupled with the integrated photoelectron chip (1) through the optical fiber; the upper side of the integrated photoelectron chip (1) is a cathode of the chip, the lower side of the integrated photoelectron chip (1) is an anode of the chip, the upper side of the integrated photoelectron chip (1) is connected with the first bias voltage circuit (4) or the grounding interface (8) through the second switch unit (10), the lower side of the integrated photoelectron chip (1) is connected with the trans-impedance amplifier (5) or the second bias voltage circuit (11) through the first switch unit (9), and the trans-impedance amplifier (5) converts photocurrent output by the integrated photoelectron chip (1) into a voltage signal; the signal processing module (6) processes and analyzes the voltage signal output by the trans-impedance amplifier (5); the first bias voltage circuit (4) works under the mode A photoelectric detection and provides a reverse bias voltage for the integrated optoelectronic chip (1) to work; the second bias voltage circuit (11) works under mode B optical signal amplification and provides a forward bias voltage for working in the integrated optoelectronic chip (1); the mode switching control circuit (3) controls the output states of all the switch units, and ensures that the whole system works in an A photoelectric detection mode or a B optical signal amplification mode.
The diameter of the fiber core of the optical fiber (7) and the number of the optical fibers in the system are not limited, and the input end of the optical fiber is end-face coupled with the integrated optoelectronic chip (1) on the end face to realize the optimal coupling efficiency; one end of the integrated optoelectronic chip package is coupled and connected to the integrated optoelectronic chip package and is operated as an input end under mode A photoelectric detection and is operated as an output end under mode B optical signal amplification.
The integrated optoelectronic chip (1) in the system is a chip manufactured based on a standard integrated circuit, the structure of the integrated optoelectronic chip (1) is a quantum well structure, and an optical signal can be amplified under forward bias; photoelectric detection can be carried out under reverse bias; the integrated photoelectronic chip (1) is packaged in the integrated photoelectronic chip package, so that the influence of adverse factors in the external environment on the integrated photoelectronic chip (1) is prevented.
The mode switching control circuit (3) in the system is based on any one of a digital circuit, a microcontroller and a field programmable gate array; the number of output ends of the mode switching control circuit (3) is equal to the number of the first switch units (9) and the second switch units (10), and each output end is connected with and controls one switch unit; the mode switching control circuit (3) is used for controlling the output state of each switch unit in the first switch unit (9) to realize that the integrated optoelectronic chip (1) is selectively connected with the trans-impedance amplifier (5) or the second bias voltage circuit (11), and the mode switching control circuit (3) is used for controlling the output state of each switch unit in the second switch unit (10) to realize that the integrated optoelectronic chip (1) is selectively connected with the first bias voltage circuit (4) or the grounding interface (8); when the system works in a mode A photoelectric detection mode, a first switch unit (9) is connected with a transimpedance amplifier (5), a second switch unit (10) is connected with a first bias voltage circuit (4), and each transimpedance amplifier is connected with an integrated optoelectronic chip (1); when the mode B optical signal is amplified, the mode switching control circuit (3) provides working voltage for the laser (2), the output of the first switch unit (9) and the second bias voltage circuit (11) are placed in a closed state, the output of the second switch unit (10) and the grounding interface (8) are placed in a closed state, and the working voltage is provided for the integrated optoelectronic chip (1).
The first bias voltage circuit (4) and the second bias voltage circuit (11) in the system can be direct current-direct current or alternating current-direct current voltage sources, and the function of the direct current-direct current voltage sources is to provide direct current voltage required by operation for the integrated optoelectronic chip (1).
The laser (2) in the system can be any one of a gas laser, a solid laser and a semiconductor laser, one end of the laser (2) is connected with a mode switching control circuit (3), the other end of the laser is connected with an integrated optoelectronic chip (1) through an optical fiber, when the laser works in a mode B optical signal amplification mode, the mode switching control circuit (3) provides working voltage for the laser (2), the function of the laser is to generate light with fixed wavelength, and the laser is connected with the integrated optoelectronic chip (1) through the optical fiber.
The signal processing module (6) in the system can be any one of a digital circuit, a microcontroller and a field programmable logic gate array, and the function of the signal processing module is to perform corresponding data processing and analysis on the voltage signal output by the transimpedance amplifier (5).
Drawings
Fig. 1 is a schematic diagram of a duplex system for optical communication, which is composed of an integrated optoelectronic chip (1), a laser (2), a mode switching control circuit (3), a first bias voltage circuit (4), a transimpedance amplifier (5), a signal processing module (6), an optical fiber (7), a ground interface (8), a first switch unit (9), a second switch unit (10), and a second bias voltage circuit (11).
FIG. 2 is a cross-sectional view of an integrated optoelectronic chip (1) device with metal layers on the top and bottom, the cathode (cathode) of the device on the top, and the anode (anode) of the device on the bottom; the integrated photoelectronic chip comprises a waveguide layer (InPGaas), a thin semiconductor film in the middle, potential energy of each region and a semiconductor layer in the middle form a potential well when no bias voltage is applied, namely the potential well is called as a quantum well, the integrated photoelectronic chip (1) consists of an active region and a passive region, the active region is a gain region, when forward current is injected into the integrated photoelectronic chip (1) and reaches a certain value, free electrons in an N region increase and continuously enter the quantum well to be compounded with holes, energy is released in a photon form, the photons form stimulated radiation under the induction of an input optical signal, the released photons and incident photons have the same frequency, the same direction, the same phase, the same polarization direction and the same mode, and the photons are continuously induced to generate stimulated radiation when the photons continuously advance, so that more new photons are generated, and the input optical signal is amplified; for a quantum well structure formed by a wide band gap material, a specific energy level is formed in a quantum well through the design of the quantum well structure and doping, and electrons in the quantum well integrated photoelectron chip are excited from a ground state to an excited state under the action of incident light of a waveguide layer; by applying a reverse bias voltage, electrons in an excited state form a current, and a photocurrent signal can be obtained.
Fig. 3 is a schematic diagram of an embodiment of a duplex system for optical communication, which is composed of an integrated optoelectronic chip (1), four lasers (2), a mode switching control circuit (3), a first bias voltage circuit (4), a transimpedance amplifier (5), a signal processing module (6), four external optical fibers (7), a ground interface (8), a first switch unit (9), a second switch unit (10), and a second bias voltage circuit (11); the integrated photoelectronic chip (1) is of a quantum well structure, works to amplify optical signals under forward bias and works to detect optical signals under reverse bias; the mode switching control circuit (3) determines that the system works in an A photoelectric detection mode or a B optical signal amplification mode by controlling the output state of the switch unit; in the photoelectric detection mode A, a mode switching control circuit (3) controls a second switch unit (10) on the upper side of an integrated optoelectronic chip (1) to be connected with a first bias voltage circuit (4), a first switch unit (9) on the lower side of the integrated optoelectronic chip to be connected with a transimpedance amplifier (5), the transimpedance amplifier (5) converts detected light current into a voltage signal, the other end of the transimpedance amplifier (5) is connected with a signal processing module (6), and the signal processing module (6) performs corresponding data processing and analysis on the voltage signal output by the transimpedance amplifier (5); in an optical signal amplification mode B, a mode switching control circuit (3) controls an upper second switch unit (10) to be connected with a grounding interface (8), controls a lower first switch unit (9) to be connected with a second bias voltage circuit (11) to provide working voltage for an integrated optoelectronic chip (1), provides working voltage for a laser (2), lasers generated by the laser (2) are coupled and connected with the integrated optoelectronic chip (1) through optical fibers, amplifies optical signals through the integrated optoelectronic chip (1) and is coupled and connected with an external optical path through four external optical fibers (7);
FIG. 4 is a diagram showing an internal structure of a chip and a connection between a laser and an optical fiber in the embodiment; the integrated optoelectronic chip comprises four first optical fibers (1), an integrated optoelectronic chip (2), four second optical fibers (3) and a laser (4); the laser (4) is coupled and connected with the end face of the integrated optoelectronic chip (2) through a second optical fiber (3); one end of the first optical fiber (1) is connected with the integrated photoelectronic chip (2) in an end face coupling mode, and the other end of the first optical fiber is connected with an external optical path.
Detailed Description
The invention is further illustrated below with reference to specific examples.
Fig. 3 shows an embodiment of a duplex system for optical communication, which is composed of an integrated optoelectronic chip (1), a laser (2), a mode switching control circuit (3), a first bias voltage circuit (4), a transimpedance amplifier (5), a signal processing module (6), four external optical fibers (7), a ground interface (8), a first switch unit (9), a second switch unit (10), and a second bias voltage circuit (11); FIG. 4 is a diagram showing an internal structure of a chip and a schematic diagram showing connection with a laser and an optical fiber in the embodiment; the integrated optoelectronic chip comprises four first optical fibers (1), an integrated optoelectronic chip (2), four second optical fibers (3) and a laser (4); the laser (4) is coupled and connected with the end face of the integrated optoelectronic chip (1) through a second optical fiber (3); one end of the first optical fiber (1) is connected with the integrated photoelectronic chip (2) in an end face coupling mode, and the other end of the first optical fiber is connected with an external optical path; in fig. 3 the integrated optoelectronic chip (1) is packaged in an integrated optoelectronic chip package; the four lasers (2) are coupled and connected with the integrated optoelectronic chip (1) through optical fibers; the upper side of the integrated photoelectron chip (1) is a cathode, and the lower side is an anode; one side of the second switch unit (10) is connected with a metal pad connected with the cathode of the integrated optoelectronic chip (1) in parallel, so that the input of the integrated optoelectronic chip (1) is connected with the first bias voltage circuit (4) or the output of the integrated optoelectronic chip (1) is connected with the grounding interface (8); one side of the first switch unit (9) is connected with a metal pad of the anode of the integrated optoelectronic chip (1), so that the output of the integrated optoelectronic chip (1) is connected with the transimpedance amplifier (5) or the input of the integrated optoelectronic chip (1) is connected with the second bias voltage circuit (11); the trans-impedance amplifier (5) converts photocurrent output by the integrated optoelectronic chip (1) into a voltage signal, and the signal processing module (6) processes and analyzes the voltage signal output by the trans-impedance amplifier (5); the mode switching control circuit (3) is connected with the first switch unit (9) or the second switch unit (10) and controls the output state of the switch units so as to control the working state of the whole system, under the photoelectric detection state A, the mode switching control circuit (3) controls the second switch unit (10) on the upper side of the integrated optoelectronic chip (1) to be connected with the first bias voltage circuit (4), the first switch unit (9) on the lower side is connected with the transimpedance amplifier (5), the transimpedance amplifier (5) converts the detected light current into a voltage signal, the other end of the transimpedance amplifier (5) is connected with the signal processing module (6), and the signal processing module (6) demodulates the voltage signal output by the transimpedance amplifier (5) into an original electric signal and performs corresponding data processing and analysis; b optical signal under the amplified state, mode switch control circuit (3) control upside second switch unit (10) connect ground connection interface (8), control downside first switch unit (9) connect second bias voltage circuit (11) and provide operating voltage for integrated optoelectronic chip (1), mode switch control circuit (3) provide operating voltage for laser instrument (2), the laser that laser instrument (2) produced passes through optic fibre and integrated optoelectronic chip (1) coupling connection, through integrated optoelectronic chip (1) to light signal amplify and through four external optic fibre (7) output and with external optical path coupling connection.
Claims (11)
1. A duplex system for optical communication is composed of an integrated optoelectronic chip (1), a laser (2), a mode switching control circuit (3), a first bias voltage circuit (4), a trans-impedance amplifier (5), a signal processing module (6), an optical fiber (7), a grounding interface (8), a first switch unit (9), a second switch unit (10) and a second bias voltage circuit (11); in the system, an integrated photoelectron chip (1) is packaged in the integrated photoelectron chip package, a laser (2) is coupled with the integrated photoelectron chip (1) through an optical fiber, the integrated photoelectron chip (1) is coupled with an external optical path through an optical fiber (7), a first bias voltage circuit (4) or a second bias voltage circuit (11) is used for providing direct current voltage for the integrated photoelectron chip (1) to work, and the integrated photoelectron chip (1) is connected with a grounding interface (8) to be grounded; the upper side of the integrated optoelectronic chip (1) is connected with a first bias voltage circuit (4) or a grounding interface (8) through a second switch unit (10), the lower side of the integrated optoelectronic chip (1) is connected with a transimpedance amplifier (5) or a second bias voltage circuit (11) through a first switch unit (9), the mode switching control circuit (3) controls the output of the switch unit to enable the whole system to work in an A photoelectric detection or B optical signal amplification mode, the input of the integrated optoelectronic chip (1) in the A photoelectric detection mode is ensured to be connected with the first bias voltage circuit (4), the output of the integrated optoelectronic chip is connected with the corresponding transimpedance amplifier (5), the photocurrent output by the integrated optoelectronic chip (1) is converted into a voltage signal by the transimpedance amplifier (5), and the voltage signal output by the transimpedance amplifier (5) is processed and analyzed by the signal processing module (6); and the input of the integrated optoelectronic chip (1) in the B optical signal amplification mode is connected with the second bias voltage circuit (11), the output of the integrated optoelectronic chip is connected with the grounding interface (8), and the input optical signal is amplified.
2. The duplexing system for optical communication according to claim 1, wherein: the integrated photoelectron chip (1) is of a quantum well structure, and the quantum well structure is formed by InPGaas with different components; the integrated photoelectronic chip (1) can work in two modes of photoelectric detection A and optical signal amplification B under the control of the mode switching control circuit (3), when forward current is injected into the integrated photoelectronic chip (1) and reaches a certain value, free electrons in an N region are increased and continuously enter a quantum well to be compounded with holes, energy is released in a photon form, and the photons form stimulated radiation under the induction of an input optical signal, so that the released photons and the incident photons have the same frequency, the same direction, the same phase, the same polarization direction and the same mode, and continuously receive the induction to generate the stimulated radiation when the photons continuously advance, and further more new photons are generated, and the input optical signal is amplified; for a quantum well structure made of an InPGaas wide band gap material, a specific energy level is formed in the quantum well through the design of the quantum well structure and doping, electrons in the quantum well are excited from a ground state to an excited state under the action of incident light of a waveguide layer, and the electrons in the excited state form current through the application of a reverse bias voltage, so that a photocurrent signal can be obtained.
3. The duplexing system for optical communication according to claim 1, wherein: the integrated photoelectronic chip (1) converts detected photons into photocurrent when the mode A photoelectric detection works in a reverse bias process; in the mode B, the optical signal amplification work is carried out under forward bias, and the input optical signal is amplified; the mode switching control circuit (3) switches the photoelectric detection or B optical signal amplification of the working mode A.
4. The duplexing system for optical communication according to claim 1, wherein: the first bias voltage circuit (4) and the second bias voltage circuit (11) can be direct current-direct current or alternating current-direct current voltage sources, and the function of the first bias voltage circuit and the second bias voltage circuit is to provide direct current voltage required by operation for the integrated optoelectronic chip (1).
5. The duplexing system for optical communication according to claim 1, wherein: the integrated photoelectronic chip (1) is an array chip manufactured based on a standard integrated circuit, works for B optical signal amplification during forward bias, works for A photoelectric detection during reverse bias, and is packaged to prevent adverse factors in external environment from influencing the integrated photoelectronic chip (1).
6. The duplexing system for optical communication according to claim 1, wherein: the number of the first switch units (9) is equal to the number of the outputs of the integrated optoelectronic chips (1), and the first switch units (9) are connected with the output ends of the corresponding integrated optoelectronic chips (1); the first switch unit (9) adopts a single-input-double-output structure, the number of input ends in the first switch unit (9) is equal to the number of transimpedance amplifiers connected with the first switch unit, and the output ends of the first switch unit (9) are sequentially connected with the input ends of corresponding transimpedance amplifiers (5).
7. The duplexing system for optical communication according to claim 1, wherein: the mode switching control circuit (3) may be any one of a digital circuit, a microcontroller and a field programmable gate array based; the number of output ends of the mode switching control circuit (3) is equal to the number of the first switch units (9) and the second switch units (10), and each output end is connected with and controls one switch unit; the mode switching control circuit (3) is used for controlling the output state of each switch unit in the first switch unit (9) or the second switch unit (10) to realize that the integrated optoelectronic chip (1) is selectively connected with the transimpedance amplifier (5) and the first bias voltage circuit (4) or selectively connected with the grounding interface (8) and the second bias voltage circuit (11); and provides working voltage for the laser (2) to ensure that the whole system works in an A photoelectric detection mode or a B optical signal amplification mode.
8. The duplexing system for optical communication according to claim 1, wherein: the number of the trans-impedance amplifiers (5) is equal to that of the outputs of the integrated optoelectronic chip (1), and the trans-impedance amplifiers are used for amplifying the input photocurrent signals and converting the input photocurrent signals into voltage signals for outputting.
9. The duplexing system for optical communication according to claim 1, wherein: the signal processing module (6) can be any one of a digital circuit, a microcontroller and a field programmable logic gate array, and is used for performing corresponding data processing and analysis on the voltage signal output by the transimpedance amplifier (5).
10. A duplex system for optical communication according to claim 1, wherein: the laser (2) can be any one of a gas laser, a solid laser and a semiconductor laser, one end of the laser (2) is connected with the mode switching control circuit (3), and the other end of the laser is connected with the integrated photoelectronic chip (1); the laser (2) can be an external laser, and can also be integrated in the integrated optoelectronic chip (1) as a semiconductor laser; when the laser operates in the B mode, the mode switching control circuit (3) provides an operating voltage of the laser (2), and the function of the operating voltage is to generate light with fixed wavelength.
11. The duplexing system for optical communication according to claim 1, wherein: the quantum well structure integrated optoelectronic chip (1) works in a B optical signal amplification mode under forward bias voltage to amplify an optical signal; working in an A photoelectric detection mode under reverse bias voltage to detect optical signals; the mode switching control circuit (3) realizes that the integrated optoelectronic chip (1) is selectively connected with the trans-impedance amplifier (5) or the second bias voltage circuit (11) by controlling the output state of the first switch unit (9); when the photoelectric detection circuit works in the photoelectric detection mode A, the first switch unit (9) is connected with the transimpedance amplifiers (5), and each transimpedance amplifier (5) is connected with the integrated optoelectronic chip (1); when the integrated optoelectronic chip works in the B optical signal amplification mode, the mode switching control circuit (3) provides working voltage for the laser (2), the output of the first switch unit (9) is connected with the second bias voltage circuit (11), the output of the second switch unit (10) is connected with the grounding interface (8), and forward bias working voltage is provided for the integrated optoelectronic chip (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110674357.8A CN113411129B (en) | 2021-06-17 | 2021-06-17 | Duplex system for optical communication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110674357.8A CN113411129B (en) | 2021-06-17 | 2021-06-17 | Duplex system for optical communication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113411129A CN113411129A (en) | 2021-09-17 |
| CN113411129B true CN113411129B (en) | 2023-03-31 |
Family
ID=77684934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110674357.8A Active CN113411129B (en) | 2021-06-17 | 2021-06-17 | Duplex system for optical communication |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113411129B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105378930A (en) * | 2013-06-19 | 2016-03-02 | 欧培拉太阳能公司 | Optoelectronic integrated circuit |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7723139B2 (en) * | 2007-10-01 | 2010-05-25 | Corning Incorporated | Quantum well intermixing |
| CN101877455B (en) * | 2009-04-28 | 2013-02-06 | 高质激光有限公司 | Laser amplifier system and laser amplifier method |
| JP6172789B2 (en) * | 2013-03-08 | 2017-08-02 | 国立大学法人京都大学 | Laser equipment |
| CN110119040A (en) * | 2018-02-07 | 2019-08-13 | 桂林电子科技大学 | Optical fiber based on electrocaloric effect modulates chip |
| CN111982166B (en) * | 2020-08-14 | 2022-05-13 | 桂林电子科技大学 | Photoelectric detector array and system for multi-core optical fiber spectral coupling |
| CN112566312B (en) * | 2020-12-09 | 2023-04-07 | 苏州亮芯光电科技有限公司 | Multifunctional device based on quantum well diode array chip and control method thereof |
-
2021
- 2021-06-17 CN CN202110674357.8A patent/CN113411129B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105378930A (en) * | 2013-06-19 | 2016-03-02 | 欧培拉太阳能公司 | Optoelectronic integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113411129A (en) | 2021-09-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7067853B1 (en) | Image intensifier using high-sensitivity high-resolution photodetector array | |
| US5130762A (en) | Integrated quantum well feedback structure | |
| CN111354807B (en) | Avalanche photodiode and method of manufacturing an optoelectronic component | |
| CN111386611B (en) | Method and system for focusing a field avalanche photodiode | |
| US8009940B2 (en) | Photonic integrated circuit with improved signal quality and electrostatic discharge threshold | |
| CN113036594B (en) | Silicon-based photoelectric chip | |
| CN113411129B (en) | Duplex system for optical communication | |
| CN109786413B (en) | Image sensor with a plurality of pixels | |
| Fu et al. | Spatial audio acquisition using a dual-functioning MQW-diode with a three-stage amplifier circuit | |
| US11398870B2 (en) | Systems and methods for optical data communication using wide bandgap semiconductor detectors | |
| CN112236871B (en) | Light receiving device and method for manufacturing the same | |
| US10854769B2 (en) | Active photonic device having a darlington configuration with feedback | |
| Kilcoyne et al. | Optical data transmission between high speed digital integrated circuit chips | |
| Nakahara et al. | High-sensitivity 1 Gbit/s CMOS receiver integrated with GaAs-or InGaAs-photodiode by wafer-bonding | |
| Vusirikala et al. | Flip-chip optical fiber attachment to a monolithic optical receiver chip | |
| JPS62285466A (en) | Interconnection of integrated circuit and integrated circuit | |
| JP2684568B2 (en) | Optical integrated circuit | |
| WO2023199403A1 (en) | Light-receiving element | |
| KR100276082B1 (en) | Structure of bidirectional optical device operating with single power supply and manufacturing method thereof | |
| JP2847820B2 (en) | Optoelectronic integrated device | |
| CN118210113A (en) | Optical data isolation chip | |
| US20110286083A1 (en) | Backside illuminated semiconductor light-receiving device, optical receiver module, and optical transceiver | |
| JP3594217B2 (en) | Optical module and manufacturing method thereof | |
| Sharifi et al. | 1.3–1.55-$\mu $ m CMOS/InP Optoelectronic Receiver Using a Self-Aligned Wafer Level Integration Technology | |
| CN117031622A (en) | Photoelectric detector integrated with three-dimensional spot-size converter and bias circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |