CN113393816A - Scheme for reducing cost of liquid crystal display driving chip - Google Patents
Scheme for reducing cost of liquid crystal display driving chip Download PDFInfo
- Publication number
- CN113393816A CN113393816A CN202110628168.7A CN202110628168A CN113393816A CN 113393816 A CN113393816 A CN 113393816A CN 202110628168 A CN202110628168 A CN 202110628168A CN 113393816 A CN113393816 A CN 113393816A
- Authority
- CN
- China
- Prior art keywords
- liquid crystal
- chip
- electrostatic protection
- protection device
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 58
- 238000003466 welding Methods 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 230000003068 static effect Effects 0.000 claims description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0292—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Liquid Crystal Display Device Control (AREA)
Abstract
The invention provides a scheme for reducing the cost of a liquid crystal display driving chip, wherein the chip adopts a silicon gate CMOS production process with the thickness of less than 1 micron, and the chip adopts a layout scheme as follows: the pressure welding point is arranged on the periphery of the liquid crystal screen driving chip, the liquid crystal screen driving port primary electrostatic protection device and the ground wire connected with the liquid crystal screen driving port primary electrostatic protection device are arranged between the pressure welding point and the internal circuit, the internal circuit is arranged inside the chip, the internal circuit is also the internal central position of the integrated circuit layout, only the electrostatic protection device connected with the ground wire in the primary electrostatic protection circuit of the liquid crystal screen driving port is not connected with the electrostatic protection device of the power supply, the circuit and the layout can effectively play an electrostatic protection role, and the cost of the chip can be effectively reduced.
Description
Technical Field
The invention relates to the field of liquid crystal display driving integrated circuits, in particular to a scheme for reducing the cost of a liquid crystal display driving chip.
Background
In the conventional liquid crystal display driving chip, under the condition of a large-size production process, such as a 3-micron aluminum gate CMOS process, the size of an internal circuit of a chip layout is large, and an area for placing a peripheral port circuit of the chip is wide, as shown in a schematic diagram of FIG. 7, the occupied area proportion of a port electrostatic protection circuit in an integrated circuit layout is not large, mainly, the area proportion of the internal circuit of the chip is large, so that a primary electrostatic protection circuit of the liquid crystal display driving port adopts the placement of an electrostatic protection device which is connected with a ground wire and an electrostatic protection device which is connected with a power supply, as shown in FIG. 8, the area proportion of the chip is not increased too much, and the cost of the chip is high due to process reasons. In order to reduce the cost, a small-sized production process, for example, a silicon gate CMOS process below 1 micron, is generally required to be selected, and in this case, if a primary electrostatic protection circuit of a conventional liquid crystal screen driving port is still selected, an electrostatic protection device connected to a ground line and an electrostatic protection device connected to a power supply are placed, as shown in a schematic diagram of fig. 9, the area proportion occupied by the port electrostatic protection circuit in an integrated circuit layout is relatively large, which may cause a small reduction in chip area, and considering that a small-sized process is generally higher in processing price than a large-sized process, the chip cost is often not effectively reduced.
Disclosure of Invention
The invention provides a scheme for reducing the cost of a liquid crystal screen driving chip, which aims to effectively reduce the chip area of a liquid crystal screen driving circuit and reduce the chip cost.
In order to solve the technical problem, the invention provides a scheme for reducing the cost of a liquid crystal screen driving chip, wherein the chip adopts a silicon gate CMOS production process with the thickness of less than 1 micron, and the layout scheme of the chip is as follows: the pressure welding points are arranged on the periphery of the liquid crystal screen driving chip, the primary static protection device of the liquid crystal screen driving port and the ground wire connected with the primary static protection device of the liquid crystal screen driving port are arranged between the pressure welding points and the internal circuit, the internal circuit is arranged inside the chip, and the internal circuit is also the internal central position of the integrated circuit layout, as shown in the schematic diagram of fig. 1.
In the chip, the electrostatic protection circuit can be divided into multiple stages, usually defining the electrostatic protection device directly connected with the port to form a primary electrostatic protection circuit, the electrostatic protection device connected with the port through a resistor to form a secondary electrostatic protection circuit, the layout area of the primary electrostatic protection circuit is often much larger than that of the secondary electrostatic protection circuit, so that the reduction of the layout area of the primary electrostatic protection circuit is the key for reducing the chip cost, as shown in fig. 2, only the electrostatic protection device connected with the ground wire and the electrostatic protection device not connected with the power supply are arranged in the primary electrostatic protection circuit of the liquid crystal screen driving port, compared with the conventional scheme in which the electrostatic protection device connected with the ground wire and the electrostatic protection device connected with the power supply are arranged, the electrostatic discharge device and the thicker power supply wire of the power supply are omitted, the area occupied by the liquid crystal screen driving port circuit in the chip can be effectively reduced, the number of the liquid crystal screen driving ports in the liquid crystal screen driving circuit is often large, so that the cost of the liquid crystal screen driving chip is obviously reduced.
The primary electrostatic protection device of the liquid crystal screen driving port does not comprise a resistor connected with the liquid crystal screen driving port, and only comprises electrostatic protection devices such as a diode, an MOS (metal oxide semiconductor) tube, a triode and a silicon controlled rectifier which are directly connected with a pressure welding point.
The electrostatic protection device is also commonly called as an electrostatic discharge device, because only the electrostatic protection device connected with the ground wire is arranged in the primary electrostatic protection circuit of the driving port of the liquid crystal screen, the position of the electrostatic protection device connected with the ground wire in the conventional layout of the chip is generally not fixed, and the position of the ground wire has the following conditions: placed on the side near the internal circuit, the ground line placed on the side near the pressure pad, a portion of the ground line covering device, all, so the present invention describes them as a whole.
The liquid crystal screen driving port of the liquid crystal screen driving chip related in the invention adopts the primary electrostatic protection circuit and the secondary electrostatic protection circuit without influencing the layout effect of the chip, and the chip cost can be effectively reduced as long as the primary electrostatic protection device directly connected with the port is subjected to chip layout according to the scheme of the invention.
Preferably, only the electrostatic protection device for the ground line is arranged in the primary electrostatic protection circuit of the driving port of the liquid crystal screen, wherein the types of the device are as follows: MOS tube, diode, triode, and SCR.
Preferably, in order to achieve the effect of obviously reducing the chip cost, because the area of the layout of the electrostatic protection device such as a diode, a MOS transistor, a triode, a thyristor and the like is relatively large compared with the resistance, in the layout of the chip layout related to the invention: and static protection devices such as diodes, MOS (metal oxide semiconductor) tubes, triodes and silicon controlled rectifiers are not arranged among the pressure welding points of more than seventy percent.
Preferably, in order to achieve the effect of obviously reducing the cost of the chip, the chip related by the invention adopts a silicon gate CMOS production process with the thickness less than 1 micron.
In conclusion, the first-level electrostatic protection circuit connected with the pressure welding points of the driving port of the liquid crystal display is simplified, and meanwhile, the chip layout is reasonably arranged, so that the chip area of the driving circuit of the liquid crystal display can be effectively reduced, and the purpose of reducing the chip cost is achieved.
Drawings
Fig. 1 is a layout diagram of a liquid crystal display driving chip according to the present invention.
Fig. 2 is a schematic diagram of a primary electrostatic protection circuit of a liquid crystal display driving port in the liquid crystal display driving chip of the invention.
FIG. 3 is a schematic diagram of a first level electrostatic discharge protection circuit of a LCD driving port of the LCD driving chip according to the first embodiment of the present invention.
Fig. 4 is a layout diagram of a liquid crystal panel driving chip according to a first embodiment of the invention.
FIG. 5 is a schematic diagram of a first level electrostatic discharge protection circuit of a LCD driving port of the LCD driving chip according to the first embodiment of the present invention.
Fig. 6 is a layout diagram of a liquid crystal panel driving chip according to the first embodiment of the invention.
Fig. 7 is a layout diagram of a liquid crystal panel driving chip in the background art.
Fig. 8 is a schematic diagram of an example of a primary electrostatic protection circuit of a liquid crystal display driving port in a liquid crystal display driving chip in the background art.
Fig. 9 is a layout diagram of another conventional lcd driver chip in the background art.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments.
In the first embodiment of the present invention, a primary electrostatic protection circuit of a liquid crystal display driving port is shown in fig. 3, a primary electrostatic protection device of the liquid crystal display driving port is composed of a gate-grounded NMOS transistor, a drain terminal of an NMOS transistor N1 of the electrostatic protection device is connected to the liquid crystal display driving port, a source terminal of an NMOS transistor N1 of the electrostatic protection device and a substrate ground line, compared with the background art in fig. 8, the circuit is simplified, and the area of a PMOS transistor P1 of the electrostatic protection device and a power line connected to the same is saved in a corresponding chip layout.
The layout of the chip according to the first embodiment of the present invention is schematically shown in fig. 4, and includes a pressure pad, an NMOS transistor of an esd protection device, a ground line, and an internal circuit. The pressure welding points are arranged on the periphery of the chip, the NMOS tube of the electrostatic protection device is arranged on one side of the pressure welding points close to the inside of the chip, the drain end of the NMOS tube of the electrostatic protection device is connected with the pressure welding points of the driving port of the liquid crystal screen, the source end and the substrate are connected with the ground wire, the ground wire is arranged on one side of the NMOS tube of the electrostatic protection device close to the inside of the chip, the internal circuit is arranged on one side of the ground wire close to the inside of the chip, the internal circuit is also the inner central position of the integrated circuit layout, and the NMOS tube of the electrostatic protection device is a primary electrostatic protection device of the driving port of the liquid crystal screen.
In the second embodiment of the present invention, as shown in fig. 5, the primary electrostatic protection circuit of the lcd driving port is composed of a diode connected to the ground, the negative electrode of the diode D1 is connected to the lcd driving port, and the positive electrode of the diode D1 is connected to the ground, compared with the background art in fig. 2, the circuit is simplified, and the chip layout saves the area of the PMOS transistor P1 and the power line connected to the PMOS transistor P1.
The layout diagram of a chip according to a second embodiment of the present invention is shown in fig. 6, and includes a pressure pad, an esd protection device diode, a ground line, and an internal circuit. The pressure welding points are arranged on the periphery of the chip, the static protection device diode is arranged on one side, close to the inside of the chip, of the pressure welding points, the negative electrode of the static protection device diode is connected with the pressure welding points of the driving port of the liquid crystal screen, the positive electrode of the static protection device diode is connected with the grounding wire, the grounding wire is arranged on one side, close to the inside of the chip, of the static protection device diode, the internal circuit is arranged on one side, close to the inside of the chip, of the grounding wire, the internal circuit is also the internal central position of the integrated circuit layout, and the static protection device diode is a primary static protection device of the driving port of the liquid crystal screen.
The above electrostatic protection device is also commonly referred to as an electrostatic discharge device.
The liquid crystal screen driving port of the liquid crystal screen driving chip adopts the primary electrostatic protection circuit and the secondary electrostatic protection circuit without influencing the layout effect of the chip, and the chip cost can be effectively reduced as long as the primary electrostatic protection device directly connected with the port pressure welding point is subjected to chip layout according to the scheme of the invention.
The above description is only an example of the present invention, and is not intended to limit the present invention, and it will be apparent to those skilled in the art that various modifications and variations can be made in the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (4)
1. The invention provides a scheme for reducing the cost of a liquid crystal display driving chip, wherein the chip adopts a silicon gate CMOS production process with the thickness of less than 1 micron, and the chip adopts a layout scheme as follows: the pressure welding points are arranged on the periphery of the liquid crystal screen driving chip, the primary static protection device of the liquid crystal screen driving port and the ground wire connected with the primary static protection device of the liquid crystal screen driving port are arranged between the pressure welding points and the internal circuit, the internal circuit is arranged inside the chip, and the internal circuit is also the internal central position of the integrated circuit layout.
2. The scheme for reducing the cost of the liquid crystal display driving chip according to claim 1, wherein the primary electrostatic protection device of the liquid crystal display driving port does not include a resistor connected with the liquid crystal display driving port, and only includes an electrostatic protection device directly connected with a port pressure welding point, such as a diode, a MOS transistor, a triode, and a thyristor, and the resistor connected with the liquid crystal display driving port is defined as a secondary electrostatic protection device in the invention.
3. The scheme for reducing the cost of the liquid crystal display driving chip according to claim 1, wherein only the electrostatic protection device connected to a ground wire and no electrostatic protection device connected to a power supply are included in the primary electrostatic protection circuit of the liquid crystal display driving port.
4. A scheme for reducing the cost of the lcd driving chip as claimed in claim 1, wherein the layout adopted by the chip is as follows: and static protection devices such as diodes, MOS (metal oxide semiconductor) tubes, triodes and silicon controlled rectifiers are not arranged among the pressure welding points of more than seventy percent.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110628168.7A CN113393816A (en) | 2021-06-07 | 2021-06-07 | Scheme for reducing cost of liquid crystal display driving chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110628168.7A CN113393816A (en) | 2021-06-07 | 2021-06-07 | Scheme for reducing cost of liquid crystal display driving chip |
Publications (1)
Publication Number | Publication Date |
---|---|
CN113393816A true CN113393816A (en) | 2021-09-14 |
Family
ID=77618381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110628168.7A Pending CN113393816A (en) | 2021-06-07 | 2021-06-07 | Scheme for reducing cost of liquid crystal display driving chip |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113393816A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117291139A (en) * | 2023-11-27 | 2023-12-26 | 成都锐成芯微科技股份有限公司 | DCDC voltage stabilizer with optimized layout |
-
2021
- 2021-06-07 CN CN202110628168.7A patent/CN113393816A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117291139A (en) * | 2023-11-27 | 2023-12-26 | 成都锐成芯微科技股份有限公司 | DCDC voltage stabilizer with optimized layout |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1794795B1 (en) | Bi-directional esd protection circuit | |
US7379127B2 (en) | Electrostatic discharge protection circuit and method of electrostatic discharge protection | |
US7304827B2 (en) | ESD protection circuits for mixed-voltage buffers | |
US9385527B2 (en) | Enhanced charge device model clamp | |
US20050174707A1 (en) | ESD protection circuit | |
US7123054B2 (en) | Semiconductor integrated circuit device having an ESD protection unit | |
US20090040668A1 (en) | Esd protection circuits for mixed-voltage buffers | |
US20070146564A1 (en) | ESD protection circuit and driving circuit for LCD | |
US9647647B2 (en) | Semiconductor device | |
US9941270B2 (en) | Semiconductor device and design method of same | |
CN107507827A (en) | The electrostatic discharge protective circuit and display panel of display panel | |
US20150243646A1 (en) | Semiconductor integrated circuit device, and electronic appliance using the same | |
WO2017157117A1 (en) | Electrostatic discharge (esd) protective circuit for integrated circuit | |
US20200212033A1 (en) | Electrostatic discharge protection apparatus and integrated passive device with capacitors | |
CN113393816A (en) | Scheme for reducing cost of liquid crystal display driving chip | |
US11430783B2 (en) | Electrostatic discharge protection apparatus | |
US7072158B2 (en) | Electrostatic discharge protection circuit | |
US20050274963A1 (en) | Semiconductor protection device | |
US6072677A (en) | Electrostatic discharge protective circuit formed by use of a silicon controlled rectifier | |
US7898035B2 (en) | Semiconductor device | |
US9006831B2 (en) | Semiconductor device | |
CN101257019A (en) | Semiconductor device having elongated electrostatic protection element along long side of semiconductor chip | |
US9337077B2 (en) | Semiconductor device | |
TW202303917A (en) | Multi-channel transient voltage suppression device | |
US10388647B1 (en) | Transient voltage suppression device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |