CN113348627A - 一种缓冲电路、分频电路以及通信设备 - Google Patents

一种缓冲电路、分频电路以及通信设备 Download PDF

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Publication number
CN113348627A
CN113348627A CN201980090368.2A CN201980090368A CN113348627A CN 113348627 A CN113348627 A CN 113348627A CN 201980090368 A CN201980090368 A CN 201980090368A CN 113348627 A CN113348627 A CN 113348627A
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CN
China
Prior art keywords
signal
transistor
type mos
mos tube
buffer circuit
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Pending
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CN201980090368.2A
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English (en)
Inventor
覃林
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Publication of CN113348627A publication Critical patent/CN113348627A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K21/00—Details of pulse counters or frequency dividers
    • H03K21/02—Input circuits
    • H03K21/023—Input circuits comprising pulse shaping or differentiating circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/00006—Changing the frequency
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K2005/00013—Delay, i.e. output pulse is delayed after input pulse and pulse length of output pulse is dependent on pulse length of input pulse
    • H03K2005/00019—Variable delay
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/40—Gating or clocking signals applied to all stages, i.e. synchronous counters

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)

Abstract

一种缓冲电路(10)、分频电路(1)以及通信设备，能够消除分频电路(1)产生的相位噪声，提升输出信号的相位噪声性能。缓冲电路(10)包括缓冲器(100)、第一控制电路(200)和第二控制电路(300)；缓冲器(100)耦合至分频器(20)，缓冲器(100)用于接收分频器(20)输出的第一信号，并在第一信号的驱动下，由缓冲电路(10)的输出端(400)输出第四信号，其中，第一信号是分频器(20)对一组差分信号进行分频得到的，差分信号包括第二信号和第三信号；第一控制电路(200)用于根据第二信号，对第四信号的上升沿进行延迟控制；第二控制电路(300)用于根据第三信号，对第四信号的下降沿进行延迟控制。

Description

PCT国内申请，说明书已公开。

Claims (16)

  1. PCT国内申请，权利要求书已公开。
CN201980090368.2A 2019-01-31 2019-01-31 一种缓冲电路、分频电路以及通信设备 Pending CN113348627A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/074222 WO2020155033A1 (zh) 2019-01-31 2019-01-31 一种缓冲电路、分频电路以及通信设备

Publications (1)

Publication Number Publication Date
CN113348627A true CN113348627A (zh) 2021-09-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980090368.2A Pending CN113348627A (zh) 2019-01-31 2019-01-31 一种缓冲电路、分频电路以及通信设备

Country Status (4)

Country Link
US (1) US11716075B2 (zh)
EP (1) EP3910793A4 (zh)
CN (1) CN113348627A (zh)
WO (1) WO2020155033A1 (zh)

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* Cited by examiner, † Cited by third party
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GB2415844A (en) * 2004-06-30 2006-01-04 Renesas Tech Corp Programmable gain amplifier with reduced gain switching transients
CN101355353A (zh) * 2007-07-23 2009-01-28 统宝光电股份有限公司 半导体集成电路、反相电路、缓冲电路及位准移位器电路
US20120081156A1 (en) * 2010-09-30 2012-04-05 Leonardus Hesen High Speed RF Divider
CN104335488A (zh) * 2012-06-27 2015-02-04 国际商业机器公司 差分时钟信号发生器
US20140266350A1 (en) * 2013-03-18 2014-09-18 Realtek Semiconductor Corp. Signal generating circuit and method thereof

Also Published As

Publication number Publication date
US20210359671A1 (en) 2021-11-18
WO2020155033A1 (zh) 2020-08-06
US11716075B2 (en) 2023-08-01
EP3910793A1 (en) 2021-11-17
EP3910793A4 (en) 2022-02-09

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