CN113346776A - Double-main-loop driving device and control method thereof - Google Patents

Double-main-loop driving device and control method thereof Download PDF

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CN113346776A
CN113346776A CN202110665251.1A CN202110665251A CN113346776A CN 113346776 A CN113346776 A CN 113346776A CN 202110665251 A CN202110665251 A CN 202110665251A CN 113346776 A CN113346776 A CN 113346776A
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igbt
mosfet
main
circuit
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CN113346776B (en
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申永鹏
王延峰
刘普
李海林
梁伟华
王明杰
王乾
张细政
杨小亮
贺振东
杜海明
和萍
武洁
邱洪波
郭磊磊
李从善
谢小品
袁小芳
刘东奇
刘迪
武克轩
王帅兵
孙嵩楠
李信波
闫增伟
于福星
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Zhengzhou University of Light Industry
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
    • H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
    • H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
    • H02P27/08—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters with pulse width modulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Control Of Ac Motors In General (AREA)

Abstract

The invention discloses a double-main-loop driving device and a control method thereof, wherein a double main loop is formed by an IGBT three-phase bridge type inverter circuit and a SIC-MOSFET three-phase bridge type inverter circuit; the PWM driving signal output by the microcontroller is communicated with the multi-channel gate, and the multi-channel gate drives and protects the circuit through a single-pole double-throw gate IGBT or a SIC-MOSFET drive and protect circuit; the SIC-MOSFET driving and protecting circuit outputs a PWM driving signal to be connected with the SIC-MOSFET three-phase bridge inverter circuit; and the IGBT driving and protecting circuit outputs PWM driving signals to be connected with the IGBT three-phase bridge type inverter circuit. The conduction control signal output by the microcontroller is communicated with the multi-way gate; the multiplexer determines the main loop to be gated according to the conducting control signal. And optimizing a main loop gating control method according to the loss difference percentage of the IGBT and the SIC-MOSFET, and dynamically selecting the main loop. The invention can be used for an electric drive system, improves the efficiency of the drive system, and has important significance for improving the utilization efficiency of electric energy and realizing the aims of energy conservation and emission reduction.

Description

Double-main-loop driving device and control method thereof
Technical Field
The invention relates to the technical field of power electronics, in particular to a double-main-loop driving device and a control method thereof.
Background
The main links influencing the efficiency of the alternating current driving system are as follows: motor efficiency and power electronics drive efficiency. The method for improving the efficiency of the power electronic driving device commonly used in engineering comprises the following steps: optimizing a motor drive control method and a novel pulse width modulation method.
Optimizing motor drive control methods, for example: patent CN112060923A, a method, a device, a medium, and a motor controller for improving efficiency of an electric drive system, which provides a drive control method for dynamically adjusting d-axis current and q-axis current in real time according to bus voltage and motor temperature; patent CN111781853A, an efficiency optimization method for electric drive system of electric vehicle, proposes an optimized drive control method for finding an optimal excitation current value according to the information of networked vehicles.
Novel pulse width modulation methods, for example: ZHENGNAN L, Qing C, Xin H, et al.A new method to provide the limit cycle of PWM Inverter [ C ]//2017 Chinese International Electric and Energy Conference (CIEEC). IEEE,2017: 687-.
Conventional medium and high power electronic driving devices generally employ an Insulated Gate Bipolar Transistor (IGBT) as a main loop driving element. In recent years, due to the development of wide bandgap power electronic devices, silicon carbide-metal semiconductor oxide field effect transistors (SIC-MOSFETs) have been used in a large scale, and SIC-MOSFETs have the following advantages over IGBTs: lower switching losses; and under the condition of small current, the conduction loss is lower.
Because the IGBT has a tailing phenomenon when being turned off, the turn-off time is prolonged, and the turn-off energy E is U I t, the larger the tailing currents I and t are, the larger the loss in the turn-off process is; whereas the SIC-MOSFET will go to 0 in a shorter time and only 1/4 times for the IGBT due to the elimination of the current tail during turn-off. Thus, the SIC-MOSFET has lower switching losses.
The conduction voltage drop and the current of the SIC-MOSFET are in a direct proportion relation, and Vds is I Rdson; while the turn-on voltage drop Vce of the IGBT generally has a larger threshold value. Therefore, the SIC-MOSFET has lower conduction loss in a low-current operating state.
Based on the advantages of the SIC-MOSFET, the SIC-MOSFET can be used for replacing the IGBT, and the efficiency of the power electronic driving device can be improved to a certain extent. In general, compared with an IGBT, the driving efficiency can be improved by about 7% by using the SIC-MOSFET (the value is only an engineering probability depending on working conditions and rated values).
However, the simple replacement of the IGBT by the SIC-MOSFET does not achieve the optimum efficiency, because the turn-on voltage Vce of the IGBT varies nonlinearly with Ic, and the increase of Vce is insignificant at large current. Based on this, when the system works in a large current, the conduction voltage drop of the SIC-MOSFET is higher than that of the IGBT, and the driving efficiency of the SIC-MOSFET is not as good as that of the IGBT under the working condition due to the higher conduction voltage drop.
Therefore, an IGBT and SIC-MOSFET double-main-loop driving device is constructed; through a full-working-condition experiment, an efficiency MAP graph of an IGBT main loop and an SIC-MOSFET main loop is constructed, and the efficient main loop is dynamically selected according to the MAP graph, so that the method is a feasible method for realizing the efficiency improvement of the power electronic driving device.
Disclosure of Invention
In order to solve the defects in the prior art, the invention aims to provide a double-main-loop driving device and a control method thereof.
In order to realize the purpose of the invention, the technical scheme adopted by the invention is as follows:
a double-main-loop driving device comprises a double main loop formed by connecting an IGBT three-phase bridge type inverter circuit and a SIC-MOSFET three-phase bridge type inverter circuit in parallel;
the gating switching circuit of the double-main-loop PWM driving signal is composed of an IGBT driving and protecting circuit, a SIC-MOSFET driving and protecting circuit, a multi-channel gating device and a microcontroller;
the PWM driving signal output by the microcontroller is communicated with the multi-channel gate, and the multi-channel gate is communicated with the IGBT driving and protecting circuit or the SIC-MOSFET driving and protecting circuit through single-pole double-throw gating;
the SIC-MOSFET driving and protecting circuit outputs a PWM driving signal to be connected with the SIC-MOSFET three-phase bridge inverter circuit; and the IGBT driving and protecting circuit outputs PWM driving signals to be connected with the IGBT three-phase bridge type inverter circuit.
Furthermore, a conduction control signal output by the microcontroller is communicated with the multi-way gate; the multiplexer determines the main loop to be gated according to the conducting control signal.
Furthermore, the conduction control signal of the microcontroller is communicated with the S0\ S1\ S2\ EN pin of the multi-way gate through the GPIO0\1\2\3 pin of the microcontroller, and the gating relation is determined through the gating truth table of the multi-way pin.
Furthermore, the IGBT three-phase bridge type inverter circuit and the upper and lower bridge arm midpoints of ABC three phases of the SIC-MOSFET three-phase bridge type inverter circuit are respectively connected in parallel and connected to the motor.
Furthermore, the direct current bus capacitor module comprises n direct current bus capacitors connected in series, and the anode and the cathode of the direct current bus capacitors connected in series are respectively connected to the anode and the cathode of the SIC-MOSFET three-phase bridge inverter circuit and the IGBT three-phase bridge inverter circuit.
Furthermore, the SIC-MOSFET driving and protecting circuit and the IGBT driving and protecting circuit receive three paths of upper bridge arm switching signals and convert the three paths of upper bridge arm switching signals into three complementary lower bridge arm switching signals according to the set dead zone control time.
A control method of a double-main-loop driving device comprises the following steps:
(1) calculating the loss difference percentage eta of the IGBTs and SIC-MOSFETs of the M-N working condition points, constructing an eta [ M ] [ N ] matrix, and arranging the eta [ M ] [ N ] matrix in a microcontroller; wherein M is the number of torque points, and N is the number of rotating speed points;
(2) collecting real-time working condition points (omega, T); wherein, omega is a rotating speed value, and T is a torque value;
(3) calculating the loss difference percentage eta (omega, T) of the IGBT and SIC-MOSFET of the real-time working condition point (omega, T) according to the built-in eta [ M ] [ N ] matrix;
(4) when eta (omega, T) is increased and is larger than the upper limit eta of switchingaWhen the control circuit is used, the microcontroller controls the multi-channel gate to be switched to the SiC-MOSFET three-phase bridge type inverter circuit; when eta (omega, T) is reduced and is less than the lower limit eta of switchingbAnd when the circuit is in use, the microcontroller controls the multi-way gate to be switched to the IGBT three-phase bridge type inverter circuit.
Further, the constructing of the η [ M ] [ N ] matrix in the step (1) specifically includes:
(1.1) selecting an IGBT three-phase bridge type inverter circuit as a main circuit;
(1.2) connecting the double-main-loop driving device to a motor, connecting the motor to a dynamometer, and adjusting the dynamometer to a working condition point (omega)i,Tj) And measuring the power loss value P of the IGBT main loopIGBT(ii) a When the measurement of one working condition point is finished, switching to the next working condition point until all the M x N points are measured;
(1.3) selecting a SiC-MOSFET three-phase bridge type inverter circuit as a main circuit;
(1.4) adjusting the dynamometer to the operating point (omega)i,Tj) And measuring the power loss value P of the main loop of the SiC-MOSFETSiC(ii) a When the measurement of one working condition point is finished, switching to the next working condition point until all the M x N points are measured;
(1.5) calculating the loss difference percentage eta (omega, T) of the M × N IGBTs and the SiC-MOSFET, and constructing a eta [ M ] [ N ] matrix;
percentage difference in loss η (ω, T) for IGBT and SiC-MOSFET:
Figure BDA0003117087140000031
wherein, PIGBTAnd PSiCRespectively representing the power loss value of the IGBT and the SiC-MOSFET at the corresponding operating points (omega, T).
Further, the calculation of η (ω, T) in the step (3) is specifically:
determining four near points (omega) according to the real-time operating points (omega, T)1,T1)(ω1,T2)(ω2,T1)(ω2,T2)；
Figure BDA0003117087140000032
Figure BDA0003117087140000033
Figure BDA0003117087140000034
Wherein, ω is1<ω<ω2、T1<T<T2。
Further, the time η (ω, T) is calculated as the carrier cycle center time, and the main circuit switching time is set as the carrier cycle end time.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, a SIC-MOSFET main loop and an IGBT main loop are connected in parallel to form a double main loop of a three-phase bridge type inverter circuit; setting a gating switching circuit of a double-main-loop PWM driving signal; the main loop optimization gating control method based on the double-main loop efficiency MAP dynamically selects the high-efficiency main loop.
The invention can be used for a motor driving system, an alternating current driving system and the like of the electric automobile. The efficiency of the driving system is improved, and the method has important significance for improving the electric energy utilization efficiency, prolonging the driving range of the electric automobile and realizing the aims of energy conservation and emission reduction.
Principle analysis and experimental results show that for a permanent magnet synchronous motor driving system with bus voltage of 600V and rated power of 45kW, under the working condition of highway economy test (HWFET), the double-main-loop driving device and the control method thereof have the efficiency improved by 3.6 percent compared with a SIC-MOSFET main loop; compared with the IGBT main loop, the efficiency is improved by 10.6%.
Drawings
FIG. 1 is a schematic diagram of a dual primary loop drive;
FIG. 2 is an IGBT main circuit power loss graph;
FIG. 3 is a graph of SiC-MOSFET main loop power loss;
FIG. 4 is a graph of the percentage difference in loss for an IGBT and a SiC-MOSFET;
FIG. 5 is a schematic view of four proximity points;
FIG. 6 is a schematic diagram of the main loop hysteresis selection;
fig. 7 is a schematic diagram of the main workflow and the switching time.
Detailed Description
The technical solution of the present invention is further described below with reference to the accompanying drawings and examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present application is not limited thereby.
As shown in fig. 1, the double-main-loop driving device of the present invention includes an IGBT three-phase bridge inverter circuit 1, a SIC-MOSFET three-phase bridge inverter circuit 2, a dc bus capacitor module 3, an IGBT driving and protecting circuit 4, a SIC-MOSFET driving and protecting circuit 5, a multiplexer 6, and a microcontroller 7.
The double-main-loop driving device comprises a double main loop and a gate switching circuit of double main loop PWM driving signals.
The IGBT three-phase bridge type inverter circuit 1, the SIC-MOSFET three-phase bridge type inverter circuit 2 and the direct current bus capacitor module 3 form a double main loop.
The SIC-MOSFET three-phase bridge type inverter circuit 2 is a three-phase bridge type inverter circuit consisting of six SIC-MOSFETs; the IGBT three-phase bridge type inverter circuit 1 is a three-phase bridge type inverter circuit formed by six IGBTs, and a SIC-MOSFET three-phase bridge type inverter circuit 2 together form a double main loop. And the direct current bus capacitor module 3 is a capacitor bank for filtering the direct current bus voltage and can provide stable direct current voltage for the main loop.
The middle points of the upper and lower bridge arms of ABC three phases of the IGBT three-phase bridge type inverter circuit 1 and the SIC-MOSFET three-phase bridge type inverter circuit 2 are respectively connected in parallel and output to a motor 8. The motor 8 is the control target of the double main loop.
The dc bus capacitor module 3 includes n dc bus capacitors connected in series, in this embodiment, two dc bus capacitors are connected in series, and the positive and negative electrodes after series connection are respectively connected to the positive and negative electrodes of the SIC-MOSFET three-phase bridge inverter circuit 1 and the IGBT three-phase bridge inverter circuit 2.
The IGBT driving and protecting circuit 4, the SIC-MOSFET driving and protecting circuit 5, the multi-way gate 6 and the microcontroller 7 form a gate switching circuit of double main loop PWM driving signals.
A microcontroller 7 for executing a motor control algorithm, outputting an enhanced pulse width modulator EPWM1, an enhanced pulse width modulator EPWM2 and an enhanced pulse width modulator EPWM 3. An EPWM1\2\3 output pin of the microcontroller 7 is communicated with an A \ B \ C pin of the multi-way gate 6 respectively; GPIO0\1\2\3 of the microcontroller 7 is respectively communicated with the S0\1\2\ EN pin of the multi-way gate 6.
The multiplexer 6 comprises A3-channel SPDT (single pole double throw) dual-way multiplexer, determines the conduction relations of A and A0/A1, B and B0/B1 and C0/C1 through the levels of S0\ S1\ S2\ EN, and determines the conduction relations according to a multi-way gating truth table shown in Table 1.
TABLE 1
Figure BDA0003117087140000051
The A0\ B0\ C0 pin of the multi-way gate 6 is connected with the pulse input pin of the SIC-MOSFET driving and protecting circuit 5; the A1\ B1\ C1 pin of the multiplexer 6 is connected with the pulse input pin of the IGBT driving and protecting circuit 4.
Six paths of PWM driving signals output by the SIC-MOSFET driving and protecting circuit 5 are respectively connected with the grids of six SIC-MOSFETs in the SIC-MOSFET three-phase bridge type inverter circuit 1; six paths of PWM driving signals output by the IGBT driving and protecting circuit 4 are respectively connected with the grid electrodes of six IGBTs in the IGBT three-phase bridge type inverter circuit 1.
The SIC-MOSFET driving and protecting circuit 5 receives the three upper bridge arm switching signals A0, B0 and C0, and converts A0, B0 and C0 into complementary three lower bridge arm switching signals according to the set dead zone control time
Figure BDA0003117087140000052
And
Figure BDA0003117087140000053
and simultaneously provides protection functions of overvoltage, overcurrent and the like.
The IGBT driving and protecting circuit 4 receives the three upper bridge arm switching signals A1, B1 and C1, and converts A1, B1 and C1 into complementary three lower bridge arm switching signals according to the set dead zone control time
Figure BDA0003117087140000062
And
Figure BDA0003117087140000063
and simultaneously provides protection functions of overvoltage, overcurrent and the like.
The invention also provides an optimized gating control method of the double main loops, which is based on the efficiency MAP of the double main loops and dynamically selects the high-efficiency main loop.
The method specifically comprises the following steps:
(1) according to the real-time rotating speed and the torque, obtaining the loss difference percentage of the IGBT and the SiC-MOSFET, and constructing an MAP (MAP) to determine a switching curve;
percentage difference in loss for IGBT and SiC-MOSFET:
Figure BDA0003117087140000061
wherein, PIGBTAnd PSiCAnd respectively represents the power loss value of the IGBT and the SiC-MOSFET at the corresponding operating point (omega, T) in the unit of W.
When the loss difference percentage MAP is determined, a switching curve can be drawn along the 0% equal loss difference, as shown in fig. 4.
The specific acquisition steps of the loss difference percentage are as follows:
(1.1) sequentially setting GPIO0\1\2\3 of the microcontroller 7 to be in an LHHH state, and selecting a main circuit of the IGBT three-phase bridge type inverter circuit to be in a working state;
(1.2) connecting the double-main-loop driving device to a motor, connecting the motor to a dynamometer, and adjusting the dynamometer to a working condition point (omega)i,Tj) And measuring the power loss value P of the IGBT main loopIGBT(ii) a When the measurement of one working condition point is finished, switching to the next working condition point until all the M x N points are measured;
in this example, M is 81, N is 37, and of these, 37 rotation points, 81 torque points, and 81 × 37PIGBTA value; and stored in the table of values igbt.
The obtained MAP of the power loss of the IGBT main loop is shown in FIG. 2.
(1.3) sequentially setting GPIO0\1\2\3 of the microcontroller 7 to be in an LLLL state, wherein a main circuit of the SiC-MOSFET three-phase bridge type inverter circuit is selected to be in a working state;
(1.4) adjusting the dynamometer to the operating point (omega)i,Tj) And measuring the power loss value P of the main loop of the SiC-MOSFETSiC(ii) a When the measurement of one working condition point is finished, switching to the next working condition point until all the M x N points are measured;
keeping the power loss value of the main loop of the IGBT consistent with that of the main loop of the IGBT during testing, wherein M is 81, and N is 37; wherein, 37 rotation speed points, 81 torque points and 81 × 37PSiCA value; and stored in the table of values SiC-mosfet.
The resulting SiC-MOSFET main loop power loss MAP is shown in fig. 3.
(1.5) the percentage of the difference in losses between M x N IGBTs and SiC-MOSFETs is calculated according to equation (1) and stored in the table of values percentage.
The obtained loss difference percentage MAP of the IGBT and the SiC-MOSFET is shown in figure 4.
(2) Determining the loss difference percentage of the IGBT and the SiC-MOSFET according to the real-time rotating speed and the torque, and selecting a corresponding main loop to participate in driving;
the specific process is as follows:
(2.1) constructing the obtained loss difference percentage data of M × N IGBTs and SiC-MOSFETs into an η [ M ] [ N ] matrix, wherein M is 81, N is 37, and the matrix is built in the microcontroller 7;
(2.2) acquiring the rotating speed and torque values (omega, T) of the real-time working condition point;
(2.3) determining four near points [ x ] of the real-time working condition points according to (omega, T)1][y1]、[x1][y2]、[x2][y1]And [ x ]2][y2](ii) a Wherein x is1 x2 y1 y2Is near point of η [ M ]][N]An index value in the matrix; corresponding to a rotational speed torque value of (ω)1,T1)(ω1,T2)、(ω2,T1) And (ω)2,T2) And ω is1<ω<ω2、T1<T<T2。
(2.4) as shown in fig. 5, calculating η (ω, T), where η (ω, T) refers to the percentage of the difference in the IGBT and SiC-MOSFET loss at the real-time operating point (ω, T);
calculating eta (omega, T)1) And η (ω, T)2)：
Figure BDA0003117087140000071
Figure BDA0003117087140000072
In the formula, eta (omega)1,T1)＝η[x1][y1]；η(ω2,T1)＝η[x2][y1]；η(ω1,T2)＝η[x1][y2]；η(ω2,T2)＝η[x2][y2]. All can be obtained by looking up the table.
Calculate η (ω, T):
Figure BDA0003117087140000073
(2.5) selecting a main loop hysteresis;
according to the loss difference value percentage of the IGBT and the SiC-MOSFET at the real-time eta (omega, T) and the real-time working condition point (omega, T), the switching selection of the main circuit of the SiC-MOSFET three-phase bridge inverter circuit and the main circuit of the IGBT three-phase bridge inverter circuit is realized by controlling GPIO0\1\2\3 of the microcontroller 7.
As shown in FIG. 6, a hysteresis switching selection method is adopted to avoid frequent switching and set a switching upper limit ηaAnd a lower switching limit ηb. When the real-time eta (omega, T) is increased and is larger than the switching upper limit etaaAnd when the voltage is in the voltage, GPIO0\1\2\3 of the control microcontroller is sequentially set to be in a LLLL state and is switched to the main circuit of the SiC-MOSFET three-phase bridge inverter circuit. When the real-time eta (omega, T) is reduced and is less than the switching lower limit etabAnd when the voltage is measured, GPIO0\1\2\3 of the control microcontroller is sequentially set to be in an LHHH state and is switched to the main circuit of the IGBT three-phase bridge type inverter circuit. In this example, ηa＝10.0％、ηb＝-2.0％。
(3) Relying on the main work flow of the SVPWM modulation method;
as shown in fig. 7, the SVPWM carrier generator adopts a "count down-up" manner, i.e., TBCTR is increased after being decreased, and the carrier frequency is 50Khz, i.e., PRD is 6000; shown as 3 carrier cycles.
The main workflow involves calculating the η (ω, T) time and the switching time determination as follows:
(3.1) calculating the eta (omega, T) time;
the time of calculation η (ω, T) is set as the carrier center time, that is, the time at which TBCTR decreases to 0, and η (ω, T) calculation work is performed.
(3.2) switching time;
when the switching timing is set to the end of the carrier cycle, that is, when TBCTR is 6000, an appropriate main loop is determined based on the result of η (ω, T).
Compared with the prior art, the invention has the beneficial effects that:
the invention comprises a double main loop of a three-phase bridge type inverter circuit formed by connecting a SIC-MOSFET main loop and an IGBT main loop in parallel; a gate switching circuit of the double main loop PWM driving signal; a main loop optimization gating control method based on a double main loop efficiency MAP graph.
The invention can be used for a motor driving system, an alternating current driving system and the like of the electric automobile. The efficiency of the driving system is improved, and the method has important significance for improving the electric energy utilization efficiency, prolonging the driving range of the electric automobile and realizing the aims of energy conservation and emission reduction.
Principle analysis and experimental results show that for a permanent magnet synchronous motor driving system with bus voltage of 600V and rated power of 45kW, under the working condition of highway economy test (HWFET), the double-main-loop driving device and the control method thereof have the efficiency improved by 3.6 percent compared with a SIC-MOSFET main loop; compared with the IGBT main loop, the efficiency is improved by 10.6%.
The present applicant has described and illustrated embodiments of the present invention in detail with reference to the accompanying drawings, but it should be understood by those skilled in the art that the above embodiments are merely preferred embodiments of the present invention, and the detailed description is only for the purpose of helping the reader to better understand the spirit of the present invention, and not for limiting the scope of the present invention, and on the contrary, any improvement or modification made based on the spirit of the present invention should fall within the scope of the present invention.

Claims (10)

1. A double-main-loop driving device is characterized by comprising a double main loop formed by connecting an IGBT three-phase bridge type inverter circuit (1) and a SIC-MOSFET three-phase bridge type inverter circuit (2) in parallel;
the gating switching circuit of the double-main-loop PWM driving signal is composed of an IGBT driving and protecting circuit (4), a SIC-MOSFET driving and protecting circuit (5), a multi-path gating device (6) and a microcontroller (7);
PWM driving signals output by the microcontroller (7) are communicated with the multi-channel gate (6), and the multi-channel gate (6) is communicated with the IGBT driving and protecting circuit (4) or the SIC-MOSFET driving and protecting circuit (5) through single-pole double-throw gating;
the SIC-MOSFET driving and protecting circuit (5) outputs a PWM driving signal to be connected with the SIC-MOSFET three-phase bridge type inverter circuit (1); the IGBT driving and protecting circuit (4) outputs PWM driving signals to be connected with the IGBT three-phase bridge type inverter circuit (1).
2. The double-main-loop driving device as claimed in claim 1, wherein the conduction control signal output by the microcontroller (7) is communicated with the multiplexer (6); the multiplexer (6) determines the main loop to be gated according to the conduction control signal.
3. The dual-main-loop driving device as claimed in claim 2, wherein the turn-on control signal of the microcontroller is communicated with the S0\ S1\ S2\ EN pin of the multiplexer (6) through the GPIO0\1\2\3 pin of the microcontroller (7), and the gating relationship is determined through the gating truth table of the multiplexer pin.
4. The double-main-circuit driving device as claimed in claim 1, wherein the IGBT three-phase bridge inverter circuit (1) is connected in parallel with the upper and lower bridge arm midpoints of the ABC three phases of the SIC-MOSFET three-phase bridge inverter circuit (2), respectively, and is connected to the motor (8).
5. The double-main-loop driving device as claimed in claim 1, further comprising a dc bus capacitor module (3) comprising n series-connected dc bus capacitors, wherein the positive and negative electrodes of the series-connected dc bus capacitors are respectively connected to the positive electrode and the negative electrode of the SIC-MOSFET three-phase bridge inverter circuit (1) and the IGBT three-phase bridge inverter circuit (2).
6. The dual main loop driving device according to claim 1, wherein the SIC-MOSFET driving and protecting circuit (5) and the IGBT driving and protecting circuit (4) receive the three upper leg switching signals and convert them into complementary three lower leg switching signals according to the set dead zone control time.
7. A control method of a double main circuit driving apparatus for controlling the double main circuit driving apparatus of claims 1 to 6, comprising the steps of:
(1) calculating the loss difference percentage eta of the IGBTs and SIC-MOSFETs of the M-N working condition points, constructing an eta [ M ] [ N ] matrix, and arranging the eta [ M ] [ N ] matrix in a microcontroller; wherein M is the number of torque points, and N is the number of rotating speed points;
(2) collecting real-time working condition points (omega, T); wherein, omega is a rotating speed value, and T is a torque value;
(3) calculating the loss difference percentage eta (omega, T) of the IGBT and SIC-MOSFET of the real-time working condition point (omega, T) according to the built-in eta [ M ] [ N ] matrix;
(4) when eta (omega, T) is increased and is larger than the upper limit eta of switchingaWhen the control circuit is used, the microcontroller controls the multi-channel gate to be switched to the SiC-MOSFET three-phase bridge type inverter circuit; when eta (omega, T) is reduced and is less than the lower limit eta of switchingbAnd when the circuit is in use, the microcontroller controls the multi-way gate to be switched to the IGBT three-phase bridge type inverter circuit.
8. The control method of the dual-main-loop driving device according to claim 7, wherein the constructing η [ M ] [ N ] matrix in the step (1) is specifically:
(1.1) selecting an IGBT three-phase bridge type inverter circuit as a main circuit;
(1.2) connecting the double-main-loop driving device to a motor, connecting the motor to a dynamometer, and adjusting the dynamometer to a working condition point (omega)i,Tj) And measuring the power of the IGBT main loopLoss value PIGBT(ii) a When the measurement of one working condition point is finished, switching to the next working condition point until all the M x N points are measured;
(1.3) selecting a SiC-MOSFET three-phase bridge type inverter circuit as a main circuit;
(1.4) adjusting the dynamometer to the operating point (omega)i,Tj) And measuring the power loss value P of the main loop of the SiC-MOSFETSiC(ii) a When the measurement of one working condition point is finished, switching to the next working condition point until all the M x N points are measured;
(1.5) calculating the loss difference percentage eta (omega, T) of the M × N IGBTs and the SiC-MOSFET, and constructing a eta [ M ] [ N ] matrix;
percentage difference in loss η (ω, T) for IGBT and SiC-MOSFET:
Figure FDA0003117087130000021
wherein, PIGBTAnd PSiCRespectively representing the power loss value of the IGBT and the SiC-MOSFET at the corresponding operating points (omega, T).
9. The control method of a dual main circuit driving apparatus according to claim 7, wherein the calculation η (ω, T) in the step (3) is specifically:
determining four near points (omega) according to the real-time operating points (omega, T)1,T1)(ω1,T2)(ω2,T1)(ω2,T2)；
Figure FDA0003117087130000022
Figure FDA0003117087130000023
Figure FDA0003117087130000024
Wherein, ω is1<ω<ω2、T1<T<T2。
10. The control method of a dual main circuit drive apparatus according to claim 7, wherein the calculation η (ω, T) timing is set to a carrier cycle center timing, and the main circuit switching timing is set to a carrier cycle end timing.
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