CN113328705A - Broadband out-phase MMIC power amplifier and design method thereof - Google Patents
Broadband out-phase MMIC power amplifier and design method thereof Download PDFInfo
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Abstract
The invention discloses a broadband out-of-phase MMIC power amplifier and a design method thereof. The power amplifier comprises two paths of power amplifying circuits and a high-low-pass phase-shifting power synthesis circuit; each path of power amplification circuit comprises a broadband input matching circuit, an RC (resistor-capacitor) stabilizing circuit, a grid biasing circuit, a transistor, a drain biasing circuit integrating parasitic compensation of the transistor and a blocking capacitor. The broadband outphasing MMIC power amplifier is operated by inputting the equal-amplitude outphasing signals with different frequencies. The invention realizes the design of a novel broadband out-phase MMIC power amplifier by adopting a high-low-pass phase shifting technology under the background that the requirement of the broadband power amplifier is sharply increased, and has the advantages of simple and compact structure, strong practicability and the like.
Description
Technical Field
The invention relates to the field of radio frequency microwave communication, and provides an out-phase MMIC power amplifier capable of working in a wide frequency band range.
Background
In recent years, microwave and millimeter wave communication technologies are the focus of intense competition in various countries, and the application fields of the technology can radiate to various aspects such as national defense safety, military combat, satellite systems, phased array radars and the like. Currently, the spectrum resources of the low frequency band tend to be saturated, and the requirements of the development of wireless communication cannot be met gradually. Therefore, new generation communication technologies are beginning to move to higher frequency bands, such as Ku, K, Ka, etc., to meet the requirements of wide frequency band, high speed, and high capacity. As a key component in a communication system, a power amplifier determines the performance of the whole system. In order to meet the explosive application requirements brought by the new generation of mobile communication, the power amplifier tends to develop in the direction of microminiaturization, high integration and low power consumption.
In order to transmit as large an amount of data as possible within a limited spectrum bandwidth, the rf microwave transceiving system usually needs to adopt a complex modulation method, which results in a high peak-to-average power ratio (abbreviated as peak-to-average ratio) of a signal, i.e. a signal envelope varies greatly in amplitude. Although the traditional power amplifier forms such as class a and class AB can realize high fidelity amplification, the amplification efficiency of non-constant envelope signals is low, especially in high-power back-off. Therefore, a radio frequency power amplifier that can achieve both high efficiency and high linearity for high peak-to-average ratio signals has become one of the research hotspots in recent years in academic and industrial fields.
Out-of-phase power amplifiers (OPAs) have gained much attention from researchers of radio frequency microwave power amplifiers because they can achieve high efficiency amplification of modulated signals while maintaining high linearity of the output signals. The outphasing power amplifier circuit comprises an upper sub amplifier and a lower sub amplifier, when the outphasing power amplifier circuit works, a signal modulation circuit carries out up-conversion and pre-amplification on a baseband signal in advance, the baseband signal is divided into two paths of modulation signals with constant amplitude and different phases, and then the modulation signals are amplified through a high-efficiency nonlinear amplifier. And then, two paths of signals with equal amplitude and out of phase are combined through an output end synthesizer, and a modulation signal which is consistent with the input signal waveform is restored again, so that the high linearity is realized while the signals are amplified at high efficiency. The mainstream out-phase power synthesis circuit has two types, namely an isolated type and a non-isolated type. The isolation type synthesis circuit comprises a resistive element, and the efficiency is low at a power back-off point. To ensure high efficiency, the industry tends to employ an isolation-free output combiner to combine two signals efficiently. However, this form of synthesizer (Chireix synthesizer) introduces a reactive imaginary part for both sub-amplifiers. In order to eliminate the influence of the imaginary part on the efficiency of the amplifier, a classic Chireix outphasing power amplifier needs to provide proper imaginary part compensation and impedance matching for the sub-amplifiers at the output end, so that the circuit structure is complex. Recently, a power combiner based on a non-equal length transmission line structure is proposed and used to implement an outphasing power amplifier. The principle is to eliminate the influence of a reactive imaginary part caused by a non-isolated combined network by using non-equal-length transmission lines. The design method has the advantages that an extra imaginary part compensation network is omitted, the method can be realized only by using unequal-length transmission lines, and the design complexity of the outphasing amplifier is greatly reduced. However, the power combiner based on the unequal length transmission line structure generates an extra phase shift in a wide frequency band, and rapidly deteriorates an impedance modulation effect, and thus cannot achieve a good out-of-phase amplification effect in a wide frequency band.
However, with the rapid development of communication technology, various modulation modes appear successively, and the authorized frequencies obtained by each operator are different. In order to improve the adaptability of the communication system to various standard signals, a wideband high-efficiency power amplifier capable of supporting wideband operation needs to be developed urgently. Broadband outphasing power amplifiers have also of course become a hotspot of academic and industrial research.
On the other hand, Monolithic Microwave Integrated Circuits (MMICs) are semiconductor devices manufactured by a series of process technologies such as epitaxy, ion implantation, and photolithography on a semiconductor substrate, and various functional modules are designed and produced by a complex and highly Integrated Circuit design. MMIC modules commonly used in communication systems include radio frequency power amplifiers, low noise amplifiers, radio frequency switches, and the like. The MMIC in the early stage is mostly applied to military and plays a significant role in the fields of military radars, electronic warfare, combat commands, weapon guidance and the like. With the development of the civil market, the MMIC is beginning to be widely applied to various fields such as wireless communication, intelligent mobile devices, satellite communication, positioning and navigation systems and the like by virtue of the characteristics of miniaturization, stability, high reliability, mass production, good product performance consistency and the like.
With the improvement of the working frequency of the circuit, particularly in a millimeter wave band, the problems of large loss, poor radio frequency performance and the like are highlighted by the Si-based process. Therefore, the Si-based millimeter wave wireless communication system cannot be widely applied to the military and civil fields. In the millimeter wave frequency band, gallium arsenide (GaAs) devices are very suitable for designing and manufacturing millimeter wave band integrated circuits due to their low noise, high electron mobility, and other characteristics, compared to conventional silicon devices. With the great reduction of cost, GaAs becomes the most widely applied semiconductor material in the manufacture of millimeter wave integrated circuits, and is widely applied to amplifiers of Ku-Ka wave bands.
In view of the present needs, there is a need for research to provide a solution for MMIC broadband outphasing power amplifiers.
Disclosure of Invention
The invention aims to provide an outphasing MMIC power amplifier capable of working in a wide frequency band based on the outphasing power amplifier theory of unequal length transmission lines and the high-low pass filter phase shifting principle aiming at the defects of the prior art, and the broadband outphasing MMIC power amplifier can work by inputting equal-amplitude outphasing signals with different frequencies. The invention is a brand new broadband power synthesizer, adopts the high-low pass phase shifting technology, realizes the design of a brand new compact broadband anisotropic MMIC power amplifier, and has the advantages of simple and compact structure, strong practicability and convenient popularization.
The invention relates to a broadband out-of-phase MMIC power amplifier, which comprises two paths of power amplifying circuits and a high-low-pass phase-shifting power synthesis circuit; each power amplification circuit comprises a broadband input matching circuit, an RC (resistor-capacitor) stabilizing circuit, a grid biasing circuit, a transistor, a drain biasing circuit integrating parasitic compensation of the transistor and a blocking capacitor; the output end of each path of broadband input matching circuit is connected with the input end of the RC stable circuit, and the output end of the RC stable circuit is connected with the grid electrode of the transistor; the input end of the grid biasing circuit is connected with a direct current power supply, and the output end of the grid biasing circuit is connected with the input end of the RC stabilizing circuit; the input end of the drain electrode bias circuit which is parasitically supplemented by the integrated transistor is connected with a direct current power supply, the output end of the drain electrode bias circuit is connected with the drain electrode of the transistor and then simultaneously connected with the input end of a blocking capacitor, and the output end of the blocking capacitor is used as the output end of one path of power amplification circuit.
And the output ends of the two blocking capacitors are respectively connected with two input ends of the high-low-pass phase-shifting power synthesis circuit.
The high-low-pass phase-shifting power synthesis circuit is composed of an upper-path low-pass phase lag filter and a lower-path high-pass phase lead filter; the input end of the low-pass phase lag filter is connected with the output end of one of the blocking capacitors, the input end of the high-pass phase lead filter is connected with the output end of the other blocking capacitor, and the output end of the low-pass phase lag filter and the output end of the high-pass phase lead filter are connected and then used as the output end of the broadband out-of-phase MMIC power amplifier. Within the working frequency band, the equivalent transmission line length of the upper path low-pass phase lag filter and the lower path high-pass phase lead filter approximately satisfies
And
in the context of (a) or (b),
representing the equivalent transmission line electrical length.
The broadband input matching circuit is designed by adopting a low-Q-value broadband matching design method, and constant-amplitude out-phase signals with different frequencies are respectively input from the input ends of the two broadband input matching circuits.
The RC stabilizing circuit consists of parallel RC circuits and is used for improving the stability of the amplifier.
The integrated transistor parasitic compensation drain biasing circuit is used for counteracting transistor parasitic capacitance and providing drain biasing voltage for the transistor.
Preferably, the low-pass phase lag filter and the high-pass phase lead filter both adopt pi-type structures;
the high-low pass phase-shifting power synthesis circuit is equivalent
Unequal length transmission line electrical lengths; equivalent electrical length versus normalized frequency for an upper path low pass phase lag filter
The change relationship is as follows:
where Δ f denotes the offset frequency, f0Represents the center frequency;
the change relation of the equivalent electrical length of the lower-path high-pass phase lead filter along with the normalized frequency is as follows:
the two formulas show that the phases of the upper path and the lower path of the proposed power synthesizer structure are always in a symmetrical relation about 0 degree in a wide frequency band range, so that the equivalent impedance produced by the upper path and the lower path is in an approximately conjugate relation, and a reconstruction circuit is not needed to realize the modulation impedance of the outphasing amplifier.
An electrical length of transmission line can be made equivalent to the principle of phase advance with a high pass filter. In the same way, the method for preparing the composite material,
an electrical length of transmission line can be made equivalent to the principle of phase lag with a low pass filter. High-low pass filter equivalent using pi-type capacitance-inductance structure
The unequal length transmission line electrical length can ensure that the equivalent electrical lengths of the upper path and the lower path of the broadband combiner keep a symmetrical relation of 0 degree under each frequency point in a broadband range.
Another object of the present invention is to provide a design method of a wideband outphasing MMIC power amplifier, which is characterized by the following steps:
the method comprises the following steps: designing an RC (resistance-capacitance) stabilizing circuit, and continuously adjusting the values of a resistor and a capacitor to enable a stabilizing parameter to be larger than 1 in a full frequency band;
step two: the input and output impedances of the transistors are determined for subsequent matching. Meanwhile, a drain electrode bias circuit for parasitic compensation of the integrated transistor is debugged, a compensation reactance value considering all frequency points is selected within the working frequency range, and the compensation reactance value is realized by selecting a proper microstrip line;
step three: using the optimal input impedance obtained in the second step as a broadband input matching circuit;
step four: designing a high-low pass phase-shifting power synthesis circuit; the high-low-pass phase-shifting power synthesis circuit is composed of an upper-path low-pass phase lag filter and a lower-path high-pass phase lead filter; within the working frequency band, the equivalent transmission line length of the upper path low-pass phase lag filter and the lower path high-pass phase lead filter approximately satisfies
And
in the context of (a) or (b),
representing the equivalent transmission line electrical length;
step five: and combining and debugging the debugged broadband input matching circuit, the RC stabilizing circuit, the grid biasing circuit, the transistor, the drain biasing circuit integrating parasitic compensation of the transistor and the high-low-pass phase-shifting power synthesis circuit.
The invention has the beneficial effects that: and a high-low pass filter is adopted to generate positive and negative phase shift values for replacing two transmission lines with different lengths. The high-low pass filter with the pi-shaped structure can ensure that the electrical lengths of the upper and lower equivalent transmission lines of the broadband combiner keep a symmetrical relation of 0 degree at each frequency point in a frequency band in a wide frequency band range, and a stable impedance modulation relation is realized. Meanwhile, the power synthesis circuit adopting the lumped element has a compact structure, can greatly reduce the size of a chip and has good economic benefit.
Drawings
Fig. 1 is a schematic diagram of a wideband outphasing MMIC power amplifier in accordance with the present invention.
FIG. 2 is a schematic diagram based on
A schematic diagram of an outphasing power amplifier power combiner for unequal length transmission lines.
FIG. 3 is a simulation of the equivalence of the present invention using simulation software
A theoretical schematic diagram of a power combiner with unequal transmission line lengths.
FIG. 4 is an implementation using a high-low pass filter
A schematic diagram of a power combiner for line lengths of unequal length transmission lines.
FIG. 5 is a graph showing the simulation results of the present invention in a wide frequency band (15GHz-17GHz) using simulation software.
Detailed Description
The following are specific embodiments of the present invention and are further described with reference to the drawings, but the present invention is not limited to these embodiments.
Fig. 1 is a schematic structural diagram of a wideband out-of-phase MMIC power amplifier according to the present invention, where the power amplifier includes two power amplification circuits and a high-low pass phase-shifting power synthesis circuit; each power amplification circuit comprises a broadband input matching circuit, an RC (resistor-capacitor) stabilizing circuit, a grid biasing circuit, a drain biasing circuit integrating parasitic compensation of a transistor and a blocking capacitor.
The broadband input matching circuit is constructed by adopting a low Q value Chebyshev step-type broadband matching method, namely a low-pass filter structure with alternative series inductance and parallel capacitance of lumped elements is used, the lumped elements need to be converted into microstrip lines in order to enable the structure to be suitable for high-frequency occasions, the series inductance is equivalent to series low-impedance microstrip lines, and finally a high-low-impedance alternative capacitance-microstrip line structure is formed. The circuit is used for ensuring low-loss transmission of signals, has small size, simplifies the circuit structure and realizes the design purpose. The microstrip line capacitance detection circuit specifically comprises a first series microstrip line, a first series DC blocking capacitor, a first parallel matching capacitor, a second series microstrip line, a second parallel matching capacitor and a third series microstrip line which are connected in sequence; one end of the first series microstrip line is connected with the signal input unit, and the other end of the first series microstrip line is connected with one end of the first series blocking capacitor. The other end of the first series blocking capacitor is connected with one end of the second series microstrip line and one end of the first parallel matching capacitor. The other end of the first parallel matching capacitor is grounded. The other end of the second series microstrip line is connected with one end of the third series microstrip line and one end of the second parallel matching capacitor. The other end of the second parallel matching capacitor is grounded. The other end of the third series microstrip line is used as the output end of the broadband input matching circuit.
The RC stabilizing circuit consists of a parallel resistor and a capacitor, and a consumption component is added at the input end of the transistor, so that the stability of the amplifier is improved.
The gate bias circuit biases the transistor to class AB, and comprises a parallel microstrip line with grounded input end capacitance for providing gate bias voltage.
The drain bias circuit for integrated transistor parasitic compensation is used for providing drain bias voltage for the transistor while offsetting transistor parasitic capacitance, and comprises a parallel microstrip line with grounded input end capacitance.
The high-low-pass phase-shifting power synthesis circuit adopts phase lead or lag generated by a high-low-pass filter to ensure the symmetrical relation of equivalent electrical lengths of an upper path and a lower path of a broadband combiner under each frequency point in a frequency band, and finally synthesizes and outputs two paths of signals with high efficiency. The device consists of an upper path and a lower path, and each path adopts a pi-shaped structure. The two paths of pi-shaped structures are respectively a low-pass phase lag pi-shaped filter and a high-pass phase lead pi-shaped filter. The low-pass phase lag pi-type filter is formed by connecting one end of a third parallel capacitor with one end of a first series inductor, grounding the other end of the third parallel capacitor, connecting one end of a fourth parallel capacitor with the other end of the first series inductor, and grounding the other end of the fourth parallel capacitor. And the third parallel capacitor and the fourth parallel capacitor have the same capacitance value. The high-pass phase lead pi-type filter is formed by connecting one end of a second parallel inductor with one end of a fifth series capacitor, grounding the other end of the second parallel inductor, connecting one end of a third parallel inductor with the other end of the fifth series capacitor and grounding the other end of the third parallel inductor. The inductance values of the second parallel inductor and the third parallel inductor are equal. In the working frequency band of the amplifier, the electrical length of the equivalent transmission lines of the upper path and the lower path approximately meets the requirement
And
the relationship (2) of (c).
The broadband heterogeneous MMIC power amplifier is designed to mainly work at 15GHz-17 GHz. Obviously, the design can be extended to other frequencies.
The design method of the broadband out-phase MMIC power amplifier is realized by the following steps:
the method comprises the following steps: and designing an RC (resistor-capacitor) stabilizing circuit, and continuously adjusting the values of the resistor and the capacitor to ensure that the stabilizing parameter is more than 1 in the full frequency band. Specifically, circuit simulation software can be used for analyzing and comparing the stability of the amplifier before and after the RC stabilizing circuit is added, and in the example, a 12-ohm resistor and a 2pF capacitor are selected to be connected in parallel to serve as a final form of the stabilizing circuit.
Step two: the input-output impedance of the transistor is determined for subsequent matching. Meanwhile, a drain electrode bias circuit for parasitic compensation of the integrated transistor is debugged, a compensation reactance value considering all frequency points is selected within the working frequency range, and the compensation reactance value is realized by selecting a proper microstrip line; the specific method comprises the following steps: the scalable transistor model in the GaAs _ pHEMT process provided by the foundry company and the previously designed stable circuit are brought into the templates of load traction and source traction of specific circuit simulation software to obtain the optimal ranges of input impedance, output impedance and output impedance during power rollback. And the size of the drain electrode biased microstrip line is adjusted in the template circuit drawn by the load, so that the optimal range of the output impedance and the output impedance during power back-off is as far as possible on the horizontal axis of the Smith chart. The microstrip line with the biased drain electrode can be connected with a direct current power supply to provide drain electrode bias voltage for the transistor, and meanwhile parasitic capacitance of the transistor can be compensated.
Step three: and D, using the optimal input impedance obtained in the step two to make a broadband input matching circuit. The input matching circuit realizes the matching of the broadband by using a step-type broadband matching circuit formed by high impedance and low impedance, and the specific method is realized by using known matching technology such as Chebyshev and the like.
Step four: designing a high-low pass phase-shifting power synthesis circuit.
Fig. 2 is a schematic diagram of a conventional power combiner based on transmission lines with unequal lengths. Based on
For the upper circuit of the combiner, the change relationship of the actual electrical length along with the normalized frequency is as follows:
for the lower path of the combiner, the actual electrical length variation with the normalized frequency is:
from the above two formulas, when the frequency changes, the phases of the upper and lower transmission lines are no longer maintained
The relationship (D) is such that the effect of modulating the impedance is deteriorated, and mainly 90 DEG.Deltaf/f exists0The influence of the term. If the phase of the upper path and the phase of the lower path are symmetrical about 90 degrees, the equivalent impedance of the upper path and the lower path of the combiner is in an approximate conjugate relation at a plurality of frequency points, and the equivalent impedance can be used as the modulation impedance of the out-phase amplifier. To eliminate 90 DEG.DELTA.f/f0And the reconfigurable method can be used for eliminating the influence of the item on the bandwidth of the combiner one by one in the band.
FIG. 3 shows the power combining circuit of the present invention using the equivalent
Unequal length transmission lines, the mechanism of operation of which utilizes the same as described in FIG. 2
The effect of non-equal length transmission lines to eliminate the imaginary reactive part caused by the non-isolated combining network is similar. However, the variation relationship of the actual equivalent electrical length along with the normalized frequency is as follows:
for the following path, the variation relationship of the actual equivalent electrical length with the normalized frequency is:
the two formulas are observed to find that the phases of the upper path and the lower path of the proposed synthesizer structure are always in a symmetrical relation about 0 degrees in a wide frequency band range, so that the equivalent impedance produced by the upper path and the lower path is in an approximately conjugate relation, and a reconstruction circuit is not needed to realize the modulation impedance of the outphasing amplifier.
FIG. 4 shows the equivalent
And (3) implementation of a non-equal length transmission line power combiner.
The fourth step of designing the broadband out-of-phase MMIC power amplifier is as follows:
step 4-1: firstly, using circuit simulation software to make center frequency f be0Ideal point pair for upper and lower paths
The unequal length transmission line combiner is selectively designed to select proper transmission line combiner
The phase and Z-impedance enable a well-behaved power combiner that also optimizes the performance of the outphasing power amplifier.
Step 4-2:
an electrical length of transmission line can be made equivalent to the principle of phase advance with a high pass filter circuit. In the same way, the method for preparing the composite material,
an electrical length of transmission line can be made equivalent to the principle of phase lag with a low pass filter circuit. Both ideal transmission line characteristic impedances are Z.
For a low pass filter, its normalized ABCD matrix is:
for an electrical length of
A transmission line with a characteristic impedance Z, whose ABCD matrix can be expressed as:
the two are equivalent to obtain an equation system:
thus, in
And Z is known, b, x can be obtained.
From the admittance and impedance relationships of the capacitance and inductance:
similarly, for a high-pass filter, its normalized ABCD matrix is:
for an electrical length of
A transmission line with a characteristic impedance Z, whose ABCD matrix can be expressed as:
the two are equivalent to obtain an equation system:
thus, in
And Z is known, b, x can be obtained.
From the admittance and impedance relationships of the capacitance and inductance:
step five: the debugged broadband input matching circuit, the RC stabilizing circuit, the drain electrode bias circuit of the integrated transistor parasitic compensation and the high-low-pass phase-shifting power synthesis circuit are combined to realize the broadband out-of-phase MMIC power amplifier, and the whole is debugged to an optimal effect again.
Fig. 5 is a diagram showing simulation results obtained by the circuit simulation software according to the present invention, and it can be known from the simulation results that the saturated output power is greater than 32dBm, the saturated output efficiency is greater than 60%, and the 6dB back-off efficiency is greater than 50% in the frequency band range of 15GHz-17 GHz. The above results demonstrate the function of implementing a wideband outphasing power MMIC amplifier.
The above description of the embodiments is only intended to facilitate the understanding of the method of the invention and its core idea. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A broadband out-of-phase MMIC power amplifier is characterized by comprising two paths of power amplifying circuits and a high-low-pass phase-shifting power synthesis circuit; each power amplification circuit comprises a broadband input matching circuit, an RC (resistor-capacitor) stabilizing circuit, a grid biasing circuit, a transistor, a drain biasing circuit integrating parasitic compensation of the transistor and a blocking capacitor; the output end of each path of broadband input matching circuit is connected with the input end of the RC stable circuit, and the output end of the RC stable circuit is connected with the grid electrode of the transistor; the input end of the grid biasing circuit is connected with a direct current power supply, and the output end of the grid biasing circuit is connected with the input end of the RC stabilizing circuit; the input end of a drain electrode biasing circuit which is parasitically supplemented by the integrated transistor is connected with a direct current power supply, the output end of the drain electrode biasing circuit is connected with the drain electrode of the transistor and then is simultaneously connected with the input end of a blocking capacitor, and the output end of the blocking capacitor is used as the output end of one path of power amplifying circuit;
the output ends of the two blocking capacitors are respectively connected with two input ends of the high-low-pass phase-shifting power synthesis circuit;
the high-low-pass phase-shifting power synthesis circuit is composed of an upper-path low-pass phase lag filter and a lower-path high-pass phase lead filter; the input end of the low-pass phase lag filter is connected with the output end of one of the stopping capacitors, the input end of the high-pass phase lead filter is connected with the output end of the other stopping capacitor, and the output end of the low-pass phase lag filter and the output end of the high-pass phase lead filter are connected and then used as the output end of the broadband out-of-phase MMIC power amplifier; within the working frequency band, the equivalent transmission line length of the upper path low-pass phase lag filter and the lower path high-pass phase lead filter approximately satisfies
And
in the context of (a) or (b),
representing the equivalent transmission line electrical length.
2. The wideband outphasing MMIC power amplifier as claimed in claim 1, wherein the wideband input matching circuit is designed using low Q wideband matching.
3. A wideband outphasing MMIC power amplifier according to claim 1 characterised in that the RC stabilizing circuit consists of parallel RC circuits for improving the stability of the amplifier.
4. The wideband outphasing MMIC power amplifier according to claim 1 wherein the gate bias circuit biases the transistors to class AB.
5. The wideband outphasing MMIC power amplifier as claimed in claim 1, wherein the integrated transistor parasitic compensation drain bias circuit is used to cancel transistor parasitic capacitance while providing drain bias voltage to the transistor.
6. The wideband outphasing MMIC power amplifier according to claim 1, wherein the low pass phase lag filter and the high pass phase lead filter are of pi type structure.
7. The wideband outphasing MMIC power amplifier as claimed in claim 1, wherein the high-low pass phase-shifting power combining circuit is equivalent to a high-low pass phase-shifting power combining circuit
Unequal length transmission line electrical lengths; equivalent electrical length versus normalized frequency for an upper path low pass phase lag filter
The change relationship is as follows:
where Δ f denotes the offset frequency、f0Represents the center frequency;
the change relation of the equivalent electrical length of the lower-path high-pass phase lead filter along with the normalized frequency is as follows:
8. a method of designing a wideband outphasing MMIC power amplifier according to any one of claims 1 to 7, characterised by the steps of:
the method comprises the following steps: designing an RC (resistance-capacitance) stabilizing circuit, and continuously adjusting the values of a resistor and a capacitor to enable a stabilizing parameter to be larger than 1 in a full frequency band;
step two: determining the input and output impedance of the transistor for subsequent matching; meanwhile, a drain electrode bias circuit for parasitic compensation of the integrated transistor is debugged, a compensation reactance value considering all frequency points is selected within the working frequency range, and the compensation reactance value is realized by selecting a proper microstrip line;
step three: using the optimal input impedance obtained in the second step as a broadband input matching circuit;
step four: designing a high-low pass phase-shifting power synthesis circuit; the high-low-pass phase-shifting power synthesis circuit is composed of an upper-path low-pass phase lag filter and a lower-path high-pass phase lead filter; within the working frequency band, the equivalent transmission line length of the upper path low-pass phase lag filter and the lower path high-pass phase lead filter approximately satisfies
And
in the context of (a) or (b),
representing the equivalent transmission line electrical length;
step five: and combining and debugging the debugged broadband input matching circuit, the RC stabilizing circuit, the grid biasing circuit, the transistor, the drain biasing circuit integrating parasitic compensation of the transistor and the high-low-pass phase-shifting power synthesis circuit.
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