CN113314588A - 一种具有高抗闩锁能力的iegt器件 - Google Patents
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Abstract
本发明公开了一种具有高抗闩锁能力的IEGT器件,在N‑型漂移层的上方间隔设置P型基区和栅极,栅极之间设置所述浮动P区,P沟道MOSFET管设置在浮动P区,除设置有P沟道MOSFET管的P型基区以外的其它P型基区表面一侧设有P+型基区、另一侧设有N+型发射区,N+型发射区上方设有与n+型发射区连接的发射极;N‑型漂移层的下方设置N型缓冲区,N型缓冲区的下方设置所述P‑型集电极区,P‑型集电极区的下方连接集电极。本发明通过在浮动P区增加P沟道MOSFET作为空穴分流器,旁路空穴电流以降低高空穴密度,提高抗闩锁能力。
Description
技术领域
本发明属于半导体技术领域,具体涉及一种具有高抗闩锁能力的IEGT器件。
背景技术
如今,在许多应用中都使用了采用IGBT和IEGT的功率逆变器***。特别在由电池供电的电动汽车背景下,IEGT器件的改善和功率损耗的减少变得越来越重要。功率转换器应用中最严重的问题是在同时施加高电流,高电压和高温的情况下的灾难性故障。一般而言,在IGBT和IEGT应用中,内置晶闸管的闩锁现象会导致灾难性故障,而该故障是IGBT和IEGT应用中最严重的问题。
IEGT器件闩锁现象的原因是:IEGT器件内存在寄生的晶闸管,即NPNP结构。在器件正常工作的过程中,不希望开通所述寄生的晶闸管。若所述寄生晶闸管处于开通状态,那么IEGT器件的栅极将失去对电流的控制。然而,在IEGT工作过程中,如果流过发射极下方的空穴电流太大,那么发射极和基区的PN结就会正偏,即发射极开始向基区注入电子,基区开始向源极注入空穴,此时寄生的晶闸管导通,即IGBT器件处于闩锁状态。
图1显示了常规IEGT的横截面图,图2显示了导通期间IEGT中的电流流动,很明显横向孔流来自相邻的浮动p区。高空穴电流流过n+发射极区域下方的p-和p+区域,n+发射极区域下方的p-区域的电阻产生电压降,使n+和p-区域之间的结正向偏置。当正向偏压足以促进电子从n+发射区的注入时,寄生晶闸管被触发,导致发生闩锁故障。
因此如何提高IEGT器件的抗闩锁能力是急需解决的技术问题。
发明内容
本发明的目的在于克服现有技术中的不足,提供了一种具有高抗闩锁能力的IEGT器件,在浮动P区增加P沟道MOSFET作为空穴分流器,旁路空穴电流以降低高空穴密度,提高抗闩锁能力。
为解决上述技术问题,本发明提供了一种具有高抗闩锁能力的IEGT器件,包括:发射极、N+型发射区、栅极、浮动P区、P型基区、P+型基区、P沟道MOSFET 管、N-型漂移层、N型缓冲区、P-型集电极区、以及集电极;
所述N-型漂移层的上方间隔设置所述P型基区和栅极,所述栅极之间设置所述浮动P区,所述P沟道MOSFET管设置在所述浮动P区,除设置有所述P沟道MOSFET管的所述P型基区以外的其它P型基区表面一侧设有所述P+型基区、另一侧设有所述N+型发射区,所述N+型发射区上方设有与所述N+型发射区连接的所述发射极;
所述N-型漂移层的下方设置所述N型缓冲区,所述N型缓冲区的下方设置所述P-型集电极区,所述P-型集电极区的下方连接所述集电极。
可选的,所述P沟道MOSFET管在IEGT器件的导通周期被关断,在IEGT器件的关断期间打开。
可选的,所述N+型发射区为垂直设置。
可选的,所述垂直的N+型发射区域使用CVD PSG的横向扩散技术形成。
可选的,在所述P+型基区和N+型发射区的下方布置反向P+型基区。
可选的,所述反向P+型基区使用高压离子注入。
与现有技术相比,本发明所达到的有益效果是:本发明通过在浮动P区增加P沟道MOSFET作为空穴分流器,旁路空穴电流以降低高空穴密度,提高抗闩锁能力,并且通过设置垂直的N+型发射区以缩短N+型发射区的长度,在N+型发射区下方增加反向P+型基区以降低P区的寄生电阻,进一步提高器件的抗闩锁能力。
附图说明
图1为现有技术中IEGT的横截面;
图2为现有技术中IEGT导通时的电流流向;
图3为本发明带空穴分流器的IEGT结构;
图4为本发明IEGT器件在导通和关断时的电流流向:(1)是导通时候的电流流向,(2)是关断时候的电流流向;
图5为本发明IEGT器件的工艺流程;
图6为增加反向P+区的横截面器件结构;
图7为沿图6中A-A’线施加在反向P+区的详细掺杂分布。
具体实施方式
下面结合附图对本发明作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案,而不能以此来限制本发明的保护范围。
在本发明专利的描述中,需要说明的是,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,除了包含所列的那些要素,而且还可包含没有明确列出的其他要素。
在本发明专利的描述中,需要说明的是,术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明专利和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明专利的限制。此外,术语“第一”、“第二”、“第三”仅用于描述目的,而不能理解为指示或暗示相对重要性。
在本发明专利的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本发明专利中的具体含义。
图2显示了现有IEGT接通时的电流流向。从图2可以看出,空穴电流从p区集中到相邻的有源单元中,导致n+发射区下方p区的电压降增加。用Rb1和Rb2来表示寄生电阻,空穴电流流过这些电阻。当电压降超过n+发射极和p基区之间的p-n+结的内建电压Vbi时,寄生晶闸管发生闭锁,导致IEGT的灾难性失效。并且n+发射区长度越小,锁存电流越大。为了防止寄生晶闸管的闭锁(即提高抗闩锁能力),可以采用的技术方案有增加空穴分流器(p沟道MOSFET)、减小n+发射极长度和p区电阻。
本发明的一种具有高抗闩锁能力的IEGT器件,参见图3所示,包括:发射极、N+型发射区、栅极、浮动P区、P型基区、P+型基区、P沟道MOSFET 管、N-型漂移层、N型缓冲区、P-型集电极区、以及集电极;
所述N-型漂移层的上方间隔设置所述P型基区和栅极,所述栅极之间设置所述浮动P区,所述p 型MOSFET管设置在所述浮动P区,除设置有所述P沟道MOSFET管的所述P型基区以外的其它P型基区表面一侧设有所述P+型基区、另一侧设有所述N+型发射区,所述N+型发射区上方设有与所述N+型发射区连接的所述发射极;
所述N-型漂移层的下方设置所述N型缓冲区,所述N型缓冲区的下方设置所述P-型集电极区,所述P-型集电极区的下方连接所述集电极。
其中P沟道MOSFET 管作为空穴旁路、空穴分流器,布置在有源沟道栅极之间的浮动P区中,相对较宽的浮动P区可以在不牺牲任何性能的情况下提供空穴旁路。在IEGT器件的导通周期,图3中的附加P沟道MOSFET被关断,如图4(1)所示。在IEGT器件的关断期间,可以打开浮动P区中的附加P沟道MOSFET,P沟道MOSFET将提供空穴旁路,如图4(2)所示。在关断期间,空穴旁路的存在可以在有源单元的n+发射极区域下方实现较低的空穴电流密度。
进一步地,所述N+型发射区为垂直设置。 垂直N+型发射区域如图6所示形成,并且该结构导致使用垂直结构的非常短的N+型发射区长度,该垂直结构应用了使用来自固体源CVD PSG的横向扩散的新处理技术。图6显示了完成的横截面器件结构以及N+发射极和P+区域下方的反向P+区域。图7示出了沿图6中的A–A'线施加在反向P+区的详细掺杂分布,并实现了在N+发射区下方的较低电阻。
与传统的IGBT和IEGT相比,由横向N+发射区转变为垂直N+发射区的新型N+发射区结构在减小N+发射区长度和N+发射区下寄生电阻方面具有极大的优势。利用CVD-PSG形成的固体源扩散和自对准电极接触法。横截面图如图6所示,可以清楚地看出,准垂直n+发射极区域是使用CVD PSG的横向扩散形成的,并且使用锥形蚀刻形成具有倾斜角度的PSG和BPSG,并且它能够实现自对准电极接触。
进一步地,在P+型基区和N+型发射区的下方布置了使用高压离子注入的反向P+型基区。该技术的应用导致了N+型发射区下方P型基区寄生电阻的显著降低。
图5示出了实现本发明的IEGT器件的构建方法,图5表示如下的过程步骤顺序,
(a) 采用化学气相沉积法(CVD)沉积Si3N4,然后进行光刻和刻蚀;
(b) 局部氧化SiO2生长;
(c) 用RIE(反应离子腐蚀技术)进行氧化物刻蚀和用CDE(化学干法刻蚀技术)进行浅Si刻蚀;
(d) 采用RIE和H2退火进行Si沟道刻蚀,获得沟道顶部和底部的软角;
(e) 牺牲SiO2生长,刻蚀出SiO2,形成栅氧化层,然后进行掺杂多晶硅沉积;
(f) 多晶硅和栅极SiO2的刻蚀直至设计深度在硅表面下1μm左右;
(g) PSG(磷硅玻璃)、BPSG(硼磷硅玻璃)和Si3N4沉积;
(h) 无需任何光刻工艺的Si3N4 RIE蚀刻;
(i) PSG和BPSG采用逐渐改变刻蚀速率的锥形干法刻蚀,然后采用BPSG回流工艺进行n+型发射区扩散,并采用干法刻蚀去除接触区中的残余氧化物,采用溅射沉积Al-Si-Cu电极。
本发明的IEGT器件进行试验,得到作为P沟道MOSFET的空穴分流器布置在浮动P区,使RBSOA(反向偏置安全工作区)的耐压性能提高了约35%。在FBSOA(正向偏置安全工作区)和SCSOA(短路安全工作区)测试中,缩短N+发射极长度和降低N+发射极下的P区寄生电阻可以提高30%左右。在FBSOA和SCSOA测试中,反向扩散的p+基区获得了25%的改善。总的来说,SOA测试的改进比传统的IGBT和IEGT提高了25-35%。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明技术原理的前提下,还可以做出若干改进和变型,这些改进和变型也应视为本发明的保护范围。
Claims (6)
1. 一种具有高抗闩锁能力的IEGT器件,其特征是,包括:发射极、N+型发射区、栅极、浮动P区、P型基区、P+型基区、P沟道MOSFET 管、N-型漂移层、N型缓冲区、P-型集电极区、以及集电极;
所述N-型漂移层的上方间隔设置所述P型基区和栅极,所述栅极之间设置所述浮动P区,所述P沟道MOSFET管设置在所述浮动P区内,除设置有所述P沟道MOSFET管的所述P型基区以外的其它P型基区表面一侧设有所述P+型基区、另一侧设有所述N+型发射区,所述N+型发射区上方设有与所述N+型发射区连接的所述发射极;
所述N-型漂移层的下方设置所述N型缓冲区,所述N型缓冲区的下方设置所述P-型集电极区,所述P-型集电极区的下方连接所述集电极。
2.根据权利要求1所述的一种具有高抗闩锁能力的IEGT器件,其特征是,所述P沟道MOSFET管在IEGT器件的导通周期关断,在IEGT器件的关断期间打开。
3.根据权利要求1所述的一种具有高抗闩锁能力的IEGT器件,其特征是,所述N+型发射区为垂直设置。
4. 根据权利要求3所述的一种具有高抗闩锁能力的IEGT器件,其特征是,所述垂直的N+型发射区域使用CVD PSG的横向扩散技术形成。
5.根据权利要求1所述的一种具有高抗闩锁能力的IEGT器件,其特征是,在所述P+型基区和N+型发射区的下方布置反向P+型基区。
6.根据权利要求5所述的一种具有高抗闩锁能力的IEGT器件,其特征是,所述反向P+型基区使用高压离子注入。
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