CN113305412A - Diffusion welding method for tungsten target and copper back plate - Google Patents
Diffusion welding method for tungsten target and copper back plate Download PDFInfo
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- CN113305412A CN113305412A CN202110678110.3A CN202110678110A CN113305412A CN 113305412 A CN113305412 A CN 113305412A CN 202110678110 A CN202110678110 A CN 202110678110A CN 113305412 A CN113305412 A CN 113305412A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
- B23K20/026—Thermo-compression bonding with diffusion of soldering material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/24—Preliminary treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P23/00—Machines or arrangements of machines for performing specified combinations of different metal-working operations not covered by a single other subclass
- B23P23/04—Machines or arrangements of machines for performing specified combinations of different metal-working operations not covered by a single other subclass for both machining and other metal-working operations
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- Optics & Photonics (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
The invention provides a diffusion welding method of a tungsten target and a copper back plate, which comprises the following steps: carrying out fine grinding and PVD (physical vapor deposition) film coating on the welding surface of the tungsten target in sequence, and carrying out polishing treatment on the non-welding surface; carrying out PVD coating on the welding surface of the copper back plate; and assembling the tungsten target material, the welding surface and the middle layer, and sequentially performing sheath welding and hot isostatic pressing welding. The diffusion welding method can improve the bonding performance of the tungsten target and the copper back plate and solve the problem of insufficient bonding capability of the tungsten target and the copper back plate.
Description
Technical Field
The invention belongs to the field of target material manufacturing, and relates to a diffusion welding method of a tungsten target material and a copper back plate.
Background
Sputtering Target Back Plate (BP): metal sputtering targets are materials used as cathodes in sputter deposition techniques. The cathode material is separated from the cathode in the form of molecules, atoms or ions under the impact of positive charged cations in a sputtering machine and is redeposited on the surface of the anode. Since the metal sputtering target is usually a relatively expensive material such as high-purity aluminum, copper, titanium, nickel, tantalum, and noble metal, a relatively common material is often used as the backing plate in the manufacturing process. The back plate has the functions of supporting the target material, cooling, reducing the cost and the like, and common materials comprise aluminum Alloy (ALBP), copper alloy (CUBP) and the like.
Hot Isostatic Press (Hot Isostatic Press, HIP): the hot isostatic pressing machine is an instrument for forming a high-density blank (or part) by applying isotropic static pressure to powder in the hot isostatic pressing machine or a sintered blank to be compacted or a dissimilar metal in a high-temperature high-pressure sealed container by using a hot isostatic pressing technology and taking high-pressure inert gas as a medium. The hot isostatic pressing machine becomes key equipment in the fields of advanced forming technology and advanced material development, such as high-temperature powder metallurgy, casting defect elimination, dissimilar metal diffusion connection, novel engineering ceramics, composite materials, refractory materials, high-strength graphite carbon and the like.
And (3) canning: a closed container is used for placing a product, and hot isostatic pressing can be carried out only by vacuumizing a sheath to a certain vacuum degree after welding, for example, the sheath bulges due to air leakage in the production process.
CN108544045A discloses a tungsten target welding method and a tungsten target assembly, relating to the technical field of semiconductor manufacturing. The tungsten target welding method comprises the steps of firstly processing and cleaning a tungsten target and a copper back plate before welding, placing a solder drainage piece between the tungsten target and the copper back plate, then brazing the tungsten target and the copper back plate by using a brazing process to obtain a tungsten target assembly, and cooling the tungsten target assembly. The tungsten target welding method places the solder drainage piece between the tungsten target and the copper back plate before welding, so that the uniform distribution of the solder between the tungsten target and the copper back plate is ensured, and the uniformity of a welding seam, the success rate of welding and the stability of welding are improved.
CN106378507A discloses a welding method of a tungsten-titanium target assembly, which comprises: providing a tungsten titanium target material and a back plate; placing a first amount of solder on the welding surface of the tungsten-titanium target material and performing first infiltration treatment; placing a second amount of solder on the welding surface of the back plate and carrying out second infiltration treatment; adding a third amount of solder to the soldering surface of the back plate after the second wetting treatment; after the third amount of solder is added to the welding surface of the back plate, and after the first infiltration treatment, the welding surface of the tungsten-titanium target material is buckled on the welding surface of the back plate. The welding method can improve the welding strength of the tungsten-titanium target assembly.
Disclosure of Invention
In order to solve the technical problems, the application provides a diffusion welding method for a tungsten target and a copper back plate, which can improve the bonding performance of the tungsten target and the copper back plate and solve the problem of insufficient bonding capability of the tungsten target and the copper back plate.
In order to achieve the technical effect, the invention adopts the following technical scheme:
the invention provides a diffusion welding method of a tungsten target and a copper back plate, which comprises the following steps:
carrying out fine grinding and PVD (physical vapor deposition) film coating on the welding surface of the tungsten target in sequence, and carrying out polishing treatment on the non-welding surface;
carrying out PVD coating on the welding surface of the copper back plate;
and assembling the tungsten target material, the welding surface and the middle layer, and sequentially performing sheath welding and hot isostatic pressing welding.
According to the invention, the surfaces of the welding surfaces of the tungsten target material and the copper back plate are respectively subjected to PVD (physical vapor deposition) coating treatment, and are combined with assembly and welding processes such as sheath welding and hot isostatic pressing welding, so that the combination rate of the tungsten target material and the copper back plate is improved.
As a preferable technical proposal of the invention, Ra of the roughness of the welding surface after the fine grinding is less than or equal to 3 μm.
Preferably, the refining is followed by IPA ultrasonic cleaning.
As a preferable technical scheme of the invention, the tungsten target PVD coating is a PVD titanium coating.
Preferably, the titanium film has a thickness of 3 to 6 μm, such as 3.5 μm, 4 μm, 4.5 μm, 5 μm, or 5.5 μm, but not limited to the recited values, and other values not recited within the range of values are also applicable.
Preferably, the titanium film completely shields the sputtering surface.
Preferably, the titanium film shields the side surface area of the tungsten target by more than 50%.
As a preferable technical scheme of the invention, IPA ultrasonic cleaning is carried out after the polishing treatment.
As a preferable technical scheme of the invention, the PVD coating of the copper back plate is a PVD titanium coating.
Preferably, the titanium film has a thickness of 3 to 6 μm, such as 3.5 μm, 4 μm, 4.5 μm, 5 μm, or 5.5 μm, but not limited to the recited values, and other values not recited within the range of values are also applicable.
Preferably, IPA ultrasonic cleaning is carried out after the PVD coating.
As a preferable technical scheme of the invention, the copper back plate is machined to an assembly size before PVD coating.
Preferably, the machining is followed by IPA ultrasonic cleaning.
As a preferred embodiment of the present invention, the intermediate layer is machined to an assembly dimension before assembly.
Preferably, the surface roughness Ra of the intermediate layer is less than or equal to 1.6 mu m.
Preferably, the machining is followed by IPA ultrasonic cleaning.
In a preferred embodiment of the present invention, the assembly gap of the assembly is 0.4 to 0.8mm, such as 0.45mm, 0.5mm, 0.55mm, 0.6mm, 0.65mm, 0.7mm, or 0.75mm, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned range are also applicable.
Preferably, the degassing process in the sheath welding is carried out at the temperature of 250-350 ℃, the vacuum degree is less than or equal to 0.002Pa, and the time is 1-3 h.
The temperature may be 260 ℃, 270 ℃, 280 ℃, 290 ℃, 300 ℃, 310 ℃, 320 ℃, 330 ℃ or 340 ℃ and the time may be 1.2h, 1.5h, 1.8h, 2h, 2.2h, 2.5h or 2.8h, but is not limited to the recited values, and other values not recited in the above numerical ranges are also applicable.
In a preferred embodiment of the present invention, the hot isostatic pressing welding temperature is 300 to 400 ℃, such as 310 ℃, 320 ℃, 330 ℃, 340 ℃, 350 ℃, 360 ℃, 370 ℃, 380 ℃ or 390 ℃, but is not limited to the values listed above, and other values not listed above within the range of values are also applicable.
Preferably, the hot isostatic pressure welding is performed at a pressure of 105MPa or more, such as 110MPa, 120MPa, 130MPa, 140MPa, 150MPa, 160MPa, 170MPa, 180MPa, 190MPa or 200MPa, but not limited to the recited values, and other values not recited in the range of values are equally applicable.
Preferably, the time for the hot isostatic pressing welding is 3-8 h, such as 3.5h, 4h, 4.5h, 5h, 5.5h, 6h, 6.5h, 7h or 7.5h, etc., but not limited to the recited values, and other values not recited in the range of the values are also applicable.
In the present invention, after the IPA ultrasonic cleaning, drying treatment is performed, and preferably vacuum drying is performed.
As a preferred technical solution of the present invention, the diffusion welding method of the tungsten target and the copper backing plate includes the following steps:
carrying out fine grinding on a welding surface of a tungsten target material, wherein Ra of roughness of the welding surface after the fine grinding is less than or equal to 3 microns, carrying out PVD titanium coating after IPA ultrasonic cleaning, wherein the thickness of the titanium coating is 3-6 microns, carrying out polishing treatment on a non-welding surface, and carrying out IPA ultrasonic cleaning after the polishing treatment;
machining a copper back plate to an assembly size, carrying out PVD titanium coating on a welding surface of the copper back plate after IPA ultrasonic cleaning, wherein the thickness of the titanium film is 3-6 mu m, and carrying out IPA ultrasonic cleaning after the PVD coating;
machining the intermediate layer to an assembly size, wherein the surface roughness Ra of the intermediate layer is less than or equal to 1.6 mu m, and carrying out IPA ultrasonic cleaning after machining;
assembling the tungsten target, the welding surface and the middle layer, wherein the assembling clearance of the assembly is 0.4-0.8 mm, and sequentially performing sheath welding and hot isostatic pressing welding;
the degassing process in the sheath welding is carried out at the temperature of 250-350 ℃, the vacuum degree is less than or equal to 0.002Pa, and the time is 1-3 h;
the hot isostatic pressing welding temperature is 300-400 ℃, the pressure is more than or equal to 105MPa, and the time is 3-8 h.
Compared with the prior art, the invention has at least the following beneficial effects:
the application provides a diffusion welding method of a tungsten target and a copper back plate, the diffusion welding method can improve the bonding performance of the tungsten target and the copper back plate, the bonding rate can reach more than 98.5%, and the problem of insufficient bonding capability of the tungsten target and the copper back plate is solved.
Detailed Description
For the purpose of facilitating an understanding of the present invention, the present invention will now be described by way of examples. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
Example 1
The embodiment provides a diffusion welding method for a tungsten target and a copper back plate, which comprises the following steps:
carrying out fine grinding on a welding surface of a tungsten target material, wherein Ra of roughness of the welding surface after the fine grinding is less than or equal to 3 micrometers, carrying out PVD titanium coating after IPA ultrasonic cleaning, wherein the thickness of the titanium coating is 3 micrometers, carrying out polishing treatment on a non-welding surface, and carrying out IPA ultrasonic cleaning after the polishing treatment;
machining a copper back plate to an assembly size, carrying out PVD titanium coating on a welding surface of the copper back plate after IPA ultrasonic cleaning, wherein the thickness of the titanium film is 3 mu m, and carrying out IPA ultrasonic cleaning after the PVD coating;
machining the intermediate layer to an assembly size, wherein the surface roughness Ra of the intermediate layer is less than or equal to 1.6 mu m, and carrying out IPA ultrasonic cleaning after machining;
assembling the tungsten target, the welding surface and the middle layer, wherein the assembling clearance of the assembly is 0.4mm, and sequentially performing sheath welding and hot isostatic pressing welding;
the degassing process in the sheath welding is carried out at the temperature of 250 ℃, the vacuum degree is less than or equal to 0.002Pa, and the time is 3 h;
the hot isostatic pressing welding temperature is 300 ℃, the pressure is 150MPa, and the time is 8 h.
Example 2
The embodiment provides a diffusion welding method for a tungsten target and a copper back plate, which comprises the following steps:
carrying out fine grinding on a welding surface of a tungsten target material, wherein Ra of roughness of the welding surface after the fine grinding is less than or equal to 3 microns, carrying out PVD titanium coating after IPA ultrasonic cleaning, wherein the thickness of the titanium coating is 6 microns, carrying out polishing treatment on a non-welding surface, and carrying out IPA ultrasonic cleaning after the polishing treatment;
machining a copper back plate to an assembly size, carrying out PVD titanium coating on a welding surface of the copper back plate after IPA ultrasonic cleaning, wherein the thickness of the titanium film is 6 mu m, and carrying out IPA ultrasonic cleaning after the PVD coating;
machining the intermediate layer to an assembly size, wherein the surface roughness Ra of the intermediate layer is less than or equal to 1.6 mu m, and carrying out IPA ultrasonic cleaning after machining;
assembling the tungsten target, the welding surface and the middle layer, wherein the assembling clearance of the assembly is 0.8mm, and sequentially performing sheath welding and hot isostatic pressing welding;
the degassing process in the sheath welding is carried out at the temperature of 350 ℃, the vacuum degree is less than or equal to 0.002Pa, and the time is 1 h;
the hot isostatic pressing welding temperature is 400 ℃, the pressure is 120MPa, and the time is 3 h.
Example 3
The embodiment provides a diffusion welding method for a tungsten target and a copper back plate, which comprises the following steps:
carrying out fine grinding on a welding surface of a tungsten target material, wherein Ra of roughness of the welding surface after the fine grinding is less than or equal to 3 mu m, carrying out PVD titanium coating after IPA ultrasonic cleaning, wherein the thickness of the titanium coating is 3.5 mu m, carrying out polishing treatment on a non-welding surface, and carrying out IPA ultrasonic cleaning after the polishing treatment;
machining a copper back plate to an assembly size, carrying out PVD titanium coating on a welding surface of the copper back plate after IPA ultrasonic cleaning, wherein the thickness of the titanium film is 3.5 mu m, and carrying out IPA ultrasonic cleaning after the PVD coating;
machining the intermediate layer to an assembly size, wherein the surface roughness Ra of the intermediate layer is less than or equal to 1.6 mu m, and carrying out IPA ultrasonic cleaning after machining;
assembling the tungsten target, the welding surface and the middle layer, wherein the assembling clearance of the assembly is 0.45mm, and sequentially performing sheath welding and hot isostatic pressing welding;
the degassing process in the sheath welding is carried out at the temperature of 280 ℃, the vacuum degree is less than or equal to 0.002Pa, and the time is 2.5 h;
the temperature of the hot isostatic pressing welding is 320 ℃, the pressure is 140MPa, and the time is 7 h.
Example 4
The embodiment provides a diffusion welding method for a tungsten target and a copper back plate, which comprises the following steps:
carrying out fine grinding on a welding surface of a tungsten target material, wherein Ra of roughness of the welding surface after the fine grinding is less than or equal to 3 mu m, carrying out PVD titanium coating after IPA ultrasonic cleaning, wherein the thickness of the titanium coating is 5.5 mu m, carrying out polishing treatment on a non-welding surface, and carrying out IPA ultrasonic cleaning after the polishing treatment;
machining a copper back plate to an assembly size, carrying out PVD titanium coating on a welding surface of the copper back plate after IPA ultrasonic cleaning, wherein the thickness of the titanium film is 5.5 mu m, and carrying out IPA ultrasonic cleaning after the PVD coating;
machining the intermediate layer to an assembly size, wherein the surface roughness Ra of the intermediate layer is less than or equal to 1.6 mu m, and carrying out IPA ultrasonic cleaning after machining;
assembling the tungsten target, the welding surface and the middle layer, wherein the assembling clearance of the assembly is 0.7mm, and sequentially performing sheath welding and hot isostatic pressing welding;
the degassing process in the sheath welding is carried out at the temperature of 330 ℃, the vacuum degree is less than or equal to 0.002Pa, and the time is 1.6 h;
the temperature of the hot isostatic pressing welding is 380 ℃, the pressure is 130MPa, and the time is 4 h.
Example 5
The embodiment provides a diffusion welding method for a tungsten target and a copper back plate, which comprises the following steps:
carrying out fine grinding on a welding surface of a tungsten target material, wherein Ra of roughness of the welding surface after the fine grinding is less than or equal to 3 mu m, carrying out PVD titanium coating after IPA ultrasonic cleaning, wherein the thickness of the titanium coating is 4.5 mu m, carrying out polishing treatment on a non-welding surface, and carrying out IPA ultrasonic cleaning after the polishing treatment;
machining a copper back plate to an assembly size, carrying out PVD titanium coating on a welding surface of the copper back plate after IPA ultrasonic cleaning, wherein the thickness of the titanium film is 4.5 mu m, and carrying out IPA ultrasonic cleaning after the PVD coating;
machining the intermediate layer to an assembly size, wherein the surface roughness Ra of the intermediate layer is less than or equal to 1.6 mu m, and carrying out IPA ultrasonic cleaning after machining;
assembling the tungsten target, the welding surface and the middle layer, wherein the assembling clearance of the assembly is 0.6mm, and sequentially performing sheath welding and hot isostatic pressing welding;
the degassing process in the sheath welding is carried out at the temperature of 300 ℃, the vacuum degree is less than or equal to 0.002Pa, and the time is 3 h;
the temperature of hot isostatic pressing welding is 350 ℃, the pressure is 135MPa, and the time is 5 h.
Comparative example 1
The comparative example was conducted under the same conditions as those in example 5 except that the welding surface of the tungsten target was not subjected to PVD coating.
Comparative example 2
The comparative example was carried out under the same conditions as in example 5 except that the PVD coating process was not carried out on the bonding surface of the copper backing plate.
The IPA ultrasonic cleaning time in examples 1-5 and comparative examples 1-2 was 10min, and the IPA ultrasonic cleaning or vacuum drying was carried out uniformly under a vacuum degree of 0.01Pa or less for 60 min.
The method for assembling the tungsten target, the welding surface and the middle layer in the examples 1 to 5 and the comparative examples 1 to 2 comprises the following steps: the tungsten target material coating surface is assembled with the intermediate layer, and the intermediate layer is arranged on the copper back plate coating surface and assembled upwards.
Examples 1-5 and comparative examples 1-2 use back sheets of CuZn alloy, type C46400, conductivity range: 14.5-15.6ms/m, and the middle layer is an aluminum middle layer. The welding effect is verified by adopting C-SCAN detection, the detection conditions are shown in table 1, and the results are shown in table 2.
TABLE 1
| Detection conditions | Product(s) |
| Probe head | 10MHZ |
| Sensitivity of the device | 36dB |
| Acoustic velocity of material | 4000m/s |
| Distance to water | 85.38mm |
| Distance between X-axis | 0.2mm |
| Distance between Y-axis | 0.2mm |
| Scanning speed | 100mm/s |
| Scanning range | / |
| Scanning direction | Y-X |
| Threshold value | TH＝60 |
TABLE 2
The applicant states that the present invention is illustrated by the above examples to show the detailed process equipment and process flow of the present invention, but the present invention is not limited to the above detailed process equipment and process flow, i.e. it does not mean that the present invention must rely on the above detailed process equipment and process flow to be implemented. It should be understood by those skilled in the art that any modification of the present invention, equivalent substitutions of the raw materials of the product of the present invention, addition of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
Claims (10)
1. A diffusion welding method of a tungsten target and a copper back plate is characterized by comprising the following steps:
carrying out fine grinding and PVD (physical vapor deposition) film coating on the welding surface of the tungsten target in sequence, and carrying out polishing treatment on the non-welding surface;
carrying out PVD coating on the welding surface of the copper back plate;
and assembling the tungsten target material, the welding surface and the middle layer, and sequentially performing sheath welding and hot isostatic pressing welding.
2. The diffusion welding method of claim 1, wherein the Ra of the roughness of the weld face after the finish grinding is less than or equal to 3 μm;
preferably, the refining is followed by IPA ultrasonic cleaning.
3. The diffusion welding method according to claim 1 or 2, wherein the tungsten target PVD coating is a PVD titanium coating;
preferably, the thickness of the titanium film is 3-6 μm;
preferably, the titanium film completely shields the sputtering surface;
preferably, the titanium film shields the side surface area of the tungsten target by more than 50%.
4. The diffusion bonding method of any one of claims 1 to 3, wherein the polishing treatment is followed by IPA ultrasonic cleaning.
5. The diffusion welding method of any one of claims 1-4, characterized in that the copper backing plate PVD coating is a PVD titanium coating;
preferably, the thickness of the titanium film is 3-6 μm;
preferably, IPA ultrasonic cleaning is carried out after the PVD coating.
6. The diffusion bonding method of any of claims 1-5, wherein the copper backing plate is machined to fit dimensions prior to PVD coating;
preferably, the machining is followed by IPA ultrasonic cleaning.
7. The diffusion bonding method of any of claims 1-6, wherein the intermediate layer is machined to a fit size prior to assembly;
preferably, the surface roughness Ra of the intermediate layer is less than or equal to 1.6 mu m;
preferably, the machining is followed by IPA ultrasonic cleaning.
8. The diffusion welding method of any one of claims 1-7, wherein the fit-up clearance of the fit-up is 0.4-0.8 mm;
preferably, the degassing process in the sheath welding is carried out at the temperature of 250-350 ℃, the vacuum degree is less than or equal to 0.002Pa, and the time is 1-3 h.
9. The diffusion welding method of any one of claims 1-8, wherein the hot isostatic pressing welding is at a temperature of 300-400 ℃;
preferably, the pressure of the hot isostatic pressing welding is more than or equal to 105 MPa;
preferably, the time for the hot isostatic pressing welding is 3-8 h.
10. Diffusion welding method according to any of the claims 1-9, characterized in that the diffusion welding method comprises the steps of:
carrying out fine grinding on a welding surface of a tungsten target material, wherein Ra of roughness of the welding surface after the fine grinding is less than or equal to 3 microns, carrying out PVD titanium coating after IPA ultrasonic cleaning, wherein the thickness of the titanium coating is 3-6 microns, carrying out polishing treatment on a non-welding surface, and carrying out IPA ultrasonic cleaning after the polishing treatment;
machining a copper back plate to an assembly size, carrying out PVD titanium coating on a welding surface of the copper back plate after IPA ultrasonic cleaning, wherein the thickness of the titanium film is 3-6 mu m, and carrying out IPA ultrasonic cleaning after the PVD coating;
machining the intermediate layer to an assembly size, wherein the surface roughness Ra of the intermediate layer is less than or equal to 1.6 mu m, and carrying out IPA ultrasonic cleaning after machining;
assembling the tungsten target, the welding surface and the middle layer, wherein the assembling clearance of the assembly is 0.4-0.8 mm, and sequentially performing sheath welding and hot isostatic pressing welding;
the degassing process in the sheath welding is carried out at the temperature of 250-350 ℃, the vacuum degree is less than or equal to 0.002Pa, and the time is 1-3 h;
the hot isostatic pressing welding temperature is 300-400 ℃, the pressure is more than or equal to 105MPa, and the time is 3-8 h.
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| CN114054991A (en) * | 2021-11-25 | 2022-02-18 | 宁波江丰热等静压技术有限公司 | Welding method of target assembly |
| CN114193106A (en) * | 2022-01-14 | 2022-03-18 | 西安天力金属复合材料股份有限公司 | Processing method for compounding copper-based material on inner hole surface of tungsten-based material |
| CN114393449A (en) * | 2022-01-24 | 2022-04-26 | 宁波江丰电子材料股份有限公司 | Preparation method of monocrystalline silicon target material of molybdenum back plate substrate |
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