CN113300211B

CN113300211B - Semiconductor laser packaging structure and preparation method thereof

Info

Publication number: CN113300211B
Application number: CN202110703277.0A
Authority: CN
Inventors: 许大强; 许超; 鲍锋辉
Original assignee: Xi'an Jiahe Chaoyi Photoelectric Technology Co ltd
Current assignee: Xi'an Jiahe Chaoyi Photoelectric Technology Co ltd
Priority date: 2021-06-24
Filing date: 2021-06-24
Publication date: 2022-07-15
Anticipated expiration: 2041-06-24
Also published as: CN113300211A

Abstract

A semiconductor laser package structure comprising: heat sink, laser assembly and lens. The heat sink is provided with a groove. The laser assembly comprises a ceramic substrate and a laser chip, the ceramic substrate is arranged in the groove, one surface, away from the groove, of the ceramic substrate is provided with a conductive coating, the laser chip is arranged on the conductive coating, the laser chip is electrically connected with the conductive coating, and the surface of the laser chip is provided with a heat dissipation layer. The lens is detachably connected with the heat sink, the lens is provided with a light transmission cavity, and the light transmission cavity is communicated with the groove. Through setting up the recess, the heat that the laser chip during operation produced also can be exported outside environment fast through the recess, is favorable to improving heat dispersion, and the surface of laser chip is provided with the heat dissipation layer, is favorable to exporting the heat that the laser chip produced fast, has further improved this semiconductor laser packaging structure's heat dispersion, through setting up lens, can converge the light that the laser chip sent, is favorable to improving the luminous effect of laser chip.

Description

Semiconductor laser packaging structure and preparation method thereof

Technical Field

The invention relates to the technical field of lasers, in particular to a semiconductor laser packaging structure and a preparation method thereof.

Background

The semiconductor laser is a device which generates laser by using a certain semiconductor material as a working substance, is widely applied to the fields of optical fiber communication, laser printers, laser scanners, laser pens and the like, is the laser with the largest production capacity at present, has the advantages of high efficiency, small volume, light weight, convenience in carrying and low price, and brings great convenience to the life and work of people.

However, semiconductor laser is owing to have the concentrated characteristics of luminous beam, and semiconductor laser has the problem that the heat is concentrated in the course of the work to make semiconductor laser the high temperature's the condition appear easily, cause semiconductor laser to damage easily, thereby greatly reduced semiconductor laser's life, cause inconvenience for the user.

Disclosure of Invention

In view of the foregoing, there is a need for a semiconductor laser package structure and a method for fabricating the same.

The technical scheme for solving the technical problems is as follows: a semiconductor laser package structure comprising:

the heat sink is provided with a groove;

the laser assembly comprises a ceramic substrate and a laser chip, the ceramic substrate is arranged in the groove, a conductive coating is arranged on one surface of the ceramic substrate, which is far away from the groove, the laser chip is arranged on the conductive coating, the laser chip is electrically connected with the conductive coating, and a heat dissipation layer is arranged on the surface of the laser chip; and

the lens is detachably connected with the heat sink, a light transmitting cavity is formed in the lens, and the light transmitting cavity is communicated with the groove.

In one embodiment, one end of the heat sink is provided with a first ventilation opening, the other end of the heat sink is provided with a second ventilation opening, the first ventilation opening and the second ventilation opening are arranged oppositely, and the first ventilation opening and the second ventilation opening are respectively communicated with the groove.

In one embodiment, a protrusion is disposed on a side wall of the groove, the ceramic substrate is disposed on a side of the protrusion away from the heat sink, a first extending portion and a second extending portion are respectively disposed at two ends of the ceramic substrate, the first extending portion is detachably connected with one end of the protrusion, and the second extending portion is detachably connected with the other end of the protrusion.

In one embodiment, a copper-gold heat conduction layer is arranged on one surface, far away from the heat sink, of the bump, and the copper-gold heat conduction layer is connected with the ceramic substrate.

In one embodiment, the heat dissipation layer comprises an inner core layer and a conductive outer cladding layer, the conductive outer cladding layer covers the inner core layer, and the conductive outer cladding layer is connected with the surface of the laser chip.

In one embodiment, the inner core layer includes aluminium carbon layer, aluminium silicon layer and aluminium silicon carbide layer, aluminium silicon carbide layer aluminium silicon layer reaches the aluminium carbon layer by being close to laser chip's one end is to keeping away from laser chip's one end is folded in proper order and is established, electrically conductive surrounding layer cladding in aluminium silicon carbide layer aluminium silicon layer reaches outside the aluminium carbon layer.

In one embodiment, the heat sink further comprises a mounting seat, wherein the mounting seat is provided with a mounting groove, the mounting seat is detachably connected with the heat sink, the mounting groove is communicated with the groove, and the lens is connected with the inner side wall of the mounting groove.

In one embodiment, the laser chip is disposed on the first conductive layer, the laser chip is electrically connected to the first conductive layer, one end of the conductive wire is electrically connected to the laser chip, and the other end of the conductive wire is electrically connected to the second conductive layer.

In one embodiment, the heat sink further comprises a plurality of heat radiating fins, each heat radiating fin is arranged on one surface of the heat sink far away from the groove, and the heat radiating fins are arranged at intervals.

A preparation method of a semiconductor laser packaging structure comprises the following steps:

providing a heat sink, and performing slotting operation on the heat sink to form a groove on the heat sink;

providing a ceramic substrate, and carrying out metallization treatment on one surface of the ceramic substrate to form a conductive coating;

providing a laser chip, carrying out surface treatment on the laser chip, and forming a heat dissipation layer on the surface of the laser chip;

welding the laser chip and the conductive coating, wherein the laser chip is electrically connected with the conductive coating, and then installing the ceramic substrate in the groove;

and providing a lens, wherein the lens is provided with a light-transmitting cavity, the lens is arranged on one surface of the heat sink provided with the groove, so that the light-transmitting cavity is communicated with the groove, and the lens covers the upper part of the laser chip to obtain a semiconductor laser packaging structure.

Compared with the prior art, the invention has at least the following advantages:

the invention is provided with the heat sink and the groove for accommodating and mounting the ceramic substrate and the laser chip, the heat generated by the laser chip during working can be quickly led out to the external environment through the groove, which is beneficial to improving the heat radiation performance, the surface of the laser chip is provided with the heat radiation layer which is beneficial to quickly leading out the heat generated by the laser chip and radiating the heat to the external environment through the groove, the heat can be transferred into the heat sink through the ceramic substrate, the heat can be quickly transferred to the external environment through the heat sink, the heat radiation performance of the semiconductor laser packaging structure is further improved, the lens is provided with the light transmission cavity communicated with the groove, the lens is matched with the laser chip in position and covers the laser chip, so that the light emitted by the laser chip can be converged, and the light emitting effect of the laser chip can be improved, therefore, the quality of the finished product of the semiconductor laser packaging structure is improved, the heat dissipation performance of the semiconductor laser packaging structure is good, and the service life of the semiconductor laser packaging structure is prolonged.

Drawings

Fig. 1 is a schematic structural diagram of a semiconductor laser package structure according to an embodiment;

fig. 2 is a schematic view of another view of the semiconductor laser package shown in fig. 1;

fig. 3 is a schematic structural diagram of a portion of a semiconductor laser package structure of an embodiment;

fig. 4 is a schematic diagram of a heat spreading layer of a semiconductor laser package structure of an embodiment;

fig. 5 is a flow chart of a method of fabricating a semiconductor laser package structure of an embodiment.

Detailed Description

It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The technical solutions of the present invention will be further described below with reference to the drawings of the embodiments of the present invention, and the present invention is not limited to the following specific embodiments.

It should be understood that the same or similar reference numerals in the drawings of the embodiments correspond to the same or similar parts. In the description of the present invention, it should be understood that if there are terms such as "upper", "lower", "front", "rear", "left", "right", "top", "bottom", etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the drawings, it is only for convenience of description and simplicity of description, but does not indicate or imply that the equipment or elements referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, the terms describing the positional relationships in the drawings are only used for illustrative purposes and are not to be construed as limiting the patent, and the specific meanings of the terms will be understood by those skilled in the art according to specific situations.

Referring to fig. 1 and 3, in one embodiment, a semiconductor laser package structure 10 includes a heat sink 100, a laser element 200, and a lens 300. The heat sink 100 is formed with a recess 101. Laser subassembly 200 includes ceramic substrate 210 and laser chip 220, ceramic substrate 210 set up in the recess 101, ceramic substrate 210 keeps away from the one side of recess 101 is provided with electrically conductive cladding layer 211, laser chip 220 set up in on the electrically conductive cladding layer 211, laser chip 220 with electrically conductive cladding layer 211 electric connection, the surface of laser chip 220 is provided with heat dissipation layer 221. The lens 300 is detachably connected with the heat sink 100, the lens 300 is provided with a light transmission cavity, and the light transmission cavity is communicated with the groove 101.

In this embodiment, a conductive plating layer 211 is disposed on a surface of the ceramic substrate 210 facing away from the bottom of the groove 101.

It should be noted that, by providing the heat sink 100, the heat sink 100 may be made of aluminum alloy, and the aluminum heat sink has the characteristics of easy processing and forming, low cost, and excellent heat dissipation performance, a groove 101 is formed on one surface of the heat sink 100 for accommodating and mounting the ceramic substrate 210 and the laser chip 220, and the groove 101 is communicated with the external environment, the heat generated by the laser chip 220 during operation can be quickly transferred to the external environment through the groove 101, which is beneficial to improving the heat dissipation performance, a conductive plating layer 211 is plated on one surface of the ceramic substrate 210, and the laser chip 220 is soldered on the conductive plating layer 211, the conductive member, for example, a metal wire, may be used to electrically connect the laser chip 220 and the conductive plating layer 211, thereby ensuring the normal operation of the laser chip 220, and the laser chip 220 is mounted in the recess 101 by mounting the ceramic substrate 210 in the recess 101.

In this embodiment, a mounting hole is formed in the ceramic substrate 210, a threaded hole is formed in each of the inner sidewalls of the groove 101, and a screw is disposed to penetrate through the mounting hole and then threadedly coupled to the inner sidewall of the threaded hole, so that the ceramic substrate 210 is mounted in the groove 101, which is convenient to mount and dismount, the surface of the laser chip 220 is provided with the heat dissipation layer 221, which facilitates rapid dissipation of heat generated by the laser chip 220 during operation and dissipation to the external environment through the groove 101, and also can be transferred to the heat sink 100 through the ceramic substrate 210, and rapidly transferred to the external environment through the heat sink 100, the lens 300 is detachably coupled to the side of the heat sink 100 where the groove 101 is formed, and the light-transmitting cavity is communicated with the groove 101, that is, the lens 300 covers the groove 101, and the position of the lens 300 is adapted to the position of the laser chip 220 and covers the laser chip 220, so that light emitted by the laser chip 220 can transmit through the lens 300, the light emitted from the laser chip 220 is condensed by the lens 300, thereby improving the light emitting effect.

By arranging the heat sink 100 and arranging the groove 101 on the heat sink 100, the heat generated by the laser chip 220 during operation can be quickly led out to the external environment through the groove 101, the surface of the laser chip 220 is provided with the heat dissipation layer 221, which is beneficial to rapidly guiding out the heat generated by the laser chip 220, further improving the heat dissipation performance of the semiconductor laser packaging structure, by arranging the lens 300, the light emitting effect of the laser chip 220 is improved, and the lens is prevented from being detachably connected with the heat sink 100, covering the laser chip 220, directly covering the laser chip 220, thereby facilitating the timely discharge of the heat generated by the laser chip 220 during operation, avoiding the heat concentration phenomenon, therefore, the quality of the finished product of the semiconductor laser packaging structure is improved, the heat dissipation performance of the semiconductor laser packaging structure is good, and the service life of the semiconductor laser packaging structure is prolonged.

In order to further improve the heat dissipation performance of the semiconductor laser package structure, in an embodiment, one end of the heat sink 100 is provided with a first vent, the other end of the heat sink 100 is provided with a second vent, the first vent and the second vent are oppositely disposed, and the first vent and the second vent are respectively communicated with the groove 101. It can be understood that first vent and second vent have been seted up respectively to the both ends of heat sink 100, and first vent and second vent are respectively with the tip parallel and level at heat sink 100 both ends, first vent reaches second vent communicates with recess 101 respectively to make recess 101 switch on with external environment through first vent and second vent in length direction's both sides, thereby be favorable to setting up the heat that laser chip 220 during operation in recess 101 produced and discharge to external environment through first vent and second vent fast in, thereby be favorable to further improving this semiconductor laser packaging structure's heat dispersion, the radiating rate is fast, the radiating effect is good.

In order to facilitate the detachment and installation of the ceramic substrate 210, referring to fig. 1, fig. 2 and fig. 3, in an embodiment, a protrusion 104 is disposed on a sidewall of the groove 101, the ceramic substrate 210 is disposed on a side of the protrusion 104 away from the heat sink 100, a first extending portion 212 and a second extending portion 213 are respectively disposed at two ends of the ceramic substrate 210, the first extending portion 212 is detachably connected to one end of the protrusion 104, and the second extending portion 213 is detachably connected to the other end of the protrusion 104.

It can be understood that, by disposing the bump 104 on the sidewall of the groove 101, the length direction of the bump 104 is parallel to the length direction of the groove 101, and may be used as a mounting table for the ceramic substrate 210, and mounting the ceramic substrate 210 on the bump 104, thereby mounting the ceramic substrate 210 on the sidewall of the groove 101, which is beneficial for realizing positioning and mounting, two ends of the ceramic substrate 210 are respectively disposed with the first extending portion 212 and the second extending portion 213, specifically, the first extending portion 212 and the ceramic substrate 210 are disposed perpendicular to each other, and the second extending portion 213 and the ceramic substrate 210 are disposed perpendicular to each other, thereby forming a U-shaped structure, so that the first extending portion 212 and the second extending portion 213 are respectively attached to two ends of the bump 104, thereby enabling the ceramic substrate 210 to be better attached to the bump 104, and the first extending portion 212 and the second extending portion 213 are respectively detachably connected to two ends of the bump 104, in this embodiment, mounting holes are formed in the first extension part 212 and the second extension part 213, threaded holes are formed in two ends of the projection 104, screws are arranged, the screws penetrate through the mounting holes and are in threaded connection with the inner side walls of the threaded holes, thereby, the ceramic substrate 210 is detachably mounted on the bump 104, on one hand, the arrangement of the connecting component on the working surface of the ceramic substrate 210 can be avoided, i.e., screws, are advantageously used to avoid damage to the laser chip 220 on the working surface of the ceramic substrate 210 when the ceramic substrate 210 is mounted, and, on the other hand, since the first extension part 212 and the second extension part 213 are detachably connected to both ends of the protrusion 104, thereby being capable of respectively entering the groove 101 through the first vent and the second vent to disassemble and assemble the ceramic substrate 210, facilitating the disassembly and assembly of the ceramic substrate 210, thereby facilitating removal of the laser chip 220 and facilitating rapid repair and maintenance of the laser chip 220.

Referring to fig. 3, in an embodiment, a copper-gold heat conduction layer 105 is disposed on a surface of the bump 104 away from the heat sink 100, and the copper-gold heat conduction layer 105 is connected to the ceramic substrate 210. It can be understood that, by disposing the cu-au heat conducting layer 105 on the bump 104, the ceramic substrate 210 can be connected to the cu-au heat conducting layer 105, and the cu-au heat conducting layer 105 has excellent heat conducting performance, so as to facilitate conducting heat on the ceramic substrate 210 to the heat sink 100 through the bump 104, and dissipating heat through the heat sink 100, thereby facilitating further improving the heat dissipation performance of the semiconductor laser package structure.

In order to improve the heat dissipation performance of the semiconductor laser package structure and the structural compactness of the semiconductor laser package structure, referring to fig. 4, in one embodiment, the heat dissipation layer 221 includes an inner core layer 222 and a conductive outer cladding layer 223, the conductive outer cladding layer 223 is wrapped outside the inner core layer 222, and the conductive outer cladding layer 223 is connected to the surface of the laser chip 220. It can be understood that, through setting up electrically conductive surrounding layer 223, electrically conductive surrounding layer 223 cladding is outside inner core layer 222, inner core layer 222 can adopt the preparation of the good material of multiple heat dispersion to obtain, be favorable to guaranteeing the heat dispersion of heat dissipation layer 221, set up heat dissipation layer 221 when laser chip 220 outer surface, electrically conductive surrounding layer 223 can play electric connection's effect, thereby can reduce the setting of outside electrically conductive piece, thereby be favorable to improving this semiconductor laser packaging structure's compactness, in this embodiment, electrically conductive surrounding layer 223 is the electrically conductive surrounding layer 223 of alloy, for example electrically conductive surrounding layer 223 is the electrically conductive surrounding layer of tungsten copper alloy, the material of electrically conductive surrounding layer 223 is the tungsten copper alloy promptly.

In one embodiment, referring to fig. 4, the inner core layer 222 includes an aluminum carbon layer 222a, an aluminum silicon layer 222b and an aluminum silicon carbide layer 222c, the aluminum silicon layer 222b and the aluminum carbon layer 222a are sequentially stacked from one end close to the laser chip 220 to one end away from the laser chip 220, and the conductive outer cladding layer 223 is wrapped outside the aluminum silicon carbide layer 222c, the aluminum silicon layer 222b and the aluminum carbon layer 222 a. It can be understood that the aluminum carbon layer 222a, the aluminum silicon layer 222b and the aluminum silicon carbide layer 222c are all heat dissipation materials with excellent heat conduction performance, the inner core layer 222 adopts three heat dissipation layers 221, namely, the aluminum carbon layer 222a, the aluminum silicon layer 222b and the aluminum silicon carbide layer 222c, which can achieve good heat conduction and dissipation effects, specifically, the thermal conductivity of the aluminum carbon layer 222a, the aluminum silicon layer 222b and the aluminum silicon carbide layer 222c gradually increases, the aluminum silicon carbide layer 222c, the aluminum silicon layer 222b and the aluminum carbon layer 222a are sequentially stacked from one end close to the laser chip 220 to one end far away from the laser chip 220, therefore, the aluminum silicon carbide layer 222c is close to the laser chip 220, the thermal conductivity of the aluminum silicon carbide layer 222c is the highest, after the heat generated by the laser chip 220 during operation is transferred to the aluminum silicon carbide layer 222c through the conductive outer cladding 223, the heat can be rapidly further conducted to the aluminum silicon layer 222b and the aluminum carbon layer 222a, thereby rapidly separating the heat from the laser chip 220, and the heat is diffused to the external environment, or is guided out to the ceramic substrate 210 and transferred to the heat sink 100 for rapid heat dissipation, so that the heat dissipation effect is optimal, the heat dissipation efficiency is highest, and the quality of the semiconductor laser packaging structure can be further improved.

Referring to fig. 1 and 2, in order to facilitate the installation and detachment of the lens 300, in one embodiment, the lens module further includes an installation seat 400, the installation seat 400 is provided with an installation groove 401, the installation seat 400 is detachably connected to the heat sink 100, the installation groove 401 is communicated with the groove 101, and the lens 300 is connected to an inner side wall of the installation groove 401.

In this embodiment, the mounting seat 400 is provided with a mounting groove 401 penetrating through two opposite surfaces of the mounting seat 400, the mounting groove 401 is communicated with the groove 101, it can be understood that by providing the mounting seat 400, the mounting groove 401 is provided for accommodating the lens 300, the mounting seat 400 is mounted on one surface of the heat sink 100 provided with the groove 101 and is located above the groove 101, the position of the mounting seat 400 corresponds to the position of the laser chip 220 in the groove 101, so that the mounting seat 400 is located above the laser chip 220, so that the lens 300 is located above the laser chip 220, thereby converging light emitted by the laser chip 220 is realized, in this embodiment, the mounting seat 400 is provided with a through hole, the heat sink 100 is provided with a threaded mounting hole, and similarly, by providing a screw, the screw penetrates through the through hole and is in threaded connection with a side wall of the threaded mounting hole, thereby realizing detachable connection of the mounting seat 400 and the heat sink 100, the installation and the dismantlement are convenient.

Referring to fig. 1 and fig. 2, in order to facilitate replacement and maintenance of the lens 300, in an embodiment, a first elastic clip 310 is disposed on one side of the lens 300, a second elastic clip 320 is disposed on the other side of the lens 300, the mounting base 400 is provided with a first locking slot and a second locking slot, one end of the first elastic clip 310, which is far away from the lens 300, is movably abutted against an inner side wall of the first locking slot, and one end of the second elastic clip 320, which is far away from the lens 300, is movably abutted against an inner side wall of the second locking slot. It can be understood that, by providing the first elastic buckle 310 and the second elastic buckle 320, the first elastic buckle 310 and the second elastic buckle 320 are symmetrically arranged, when the lens 300 is installed in the mounting seat 400, the lens 300 can be inserted into the mounting groove 401 by pressing the first elastic buckle 310 and the second elastic buckle 320, when the first elastic buckle 310 and the second elastic buckle 320 reach the first locking groove and the second locking groove respectively, the first elastic buckle 310 and the second elastic buckle 320 can automatically pop out and extend into the first locking groove and the second locking groove respectively, so that the first elastic buckle 310 and the second elastic buckle 320 are respectively engaged with the first locking groove and the second locking groove, thereby installing the lens 300 in the mounting groove 401, when the lens 300 needs to be replaced or maintained, the lens 300 can be taken out by pressing the ends of the first elastic buckle 310 and the second elastic buckle 320 through the first locking groove and the second locking groove simultaneously, the lens 300 is convenient to maintain and replace, and the applicability is better.

In an embodiment, referring to fig. 3, the conductive plating layer 211 further includes a conductive line 500, the conductive plating layer 211 includes a first conductive layer 211a and a second conductive layer 211b, the first conductive layer 211a and the second conductive layer 211b are respectively disposed on a surface of the ceramic substrate 210 away from the groove 101, the first conductive layer 211a and the second conductive layer 211b are disposed at an interval, the laser chip 220 is disposed on the first conductive layer 211a, the laser chip 220 is electrically connected to the first conductive layer 211a, one end of the conductive line 500 is electrically connected to the laser chip 220, and the other end of the conductive line 500 is electrically connected to the second conductive layer 211 b. It can be understood that the first conductive layer 211a and the second conductive layer 211b are disposed at an interval and can respectively serve as an anode pad and a cathode pad, that is, the first conductive layer 211a can serve as an anode pad, the second conductive layer 211b can serve as a cathode pad, in addition, the first conductive layer 211a can also serve as a cathode pad, and the second conductive layer 211b can serve as an anode pad, the laser chip 220 is disposed on the first conductive layer 211a, and the conductive wire 500 is disposed to electrically connect the laser chip 220 and the second conductive layer 211b, so as to achieve circuit connection, ensure normal operation of the laser chip 220, and have a simple structure and are easy to mount and prepare, for example, the conductive wire 500 is a gold wire.

Referring to fig. 1 and fig. 2 again, in an embodiment, the heat sink further includes a plurality of heat dissipation plates 600, each of the heat dissipation plates 600 is disposed on a side of the heat sink 100 away from the recess 101, and each of the heat dissipation plates 600 is disposed at an interval. It can be understood that, by arranging the heat sink 600, a quick heat dissipation effect can be further achieved, which is beneficial to further improving the heat dissipation performance of the semiconductor laser packaging structure.

In order to improve the durability of the semiconductor laser package structure and further improve the service life of the semiconductor laser package structure, in one embodiment, the inner side wall of the mounting seat 400 is provided with a phase-change heat storage coating, the phase-change heat storage coating comprises a substrate layer and expanded graphite particles, the surface of the expanded graphite particles is provided with a phase-change material, the substrate layer is coated on the expanded graphite particles and outside the phase-change material, and the substrate layer is connected with the inner side wall of the mounting seat 400. It can be understood that, by providing the phase-change heat storage coating on the inner sidewall of the mounting seat 400, the phase-change heat storage coating can be used for absorbing and storing heat, specifically, the phase-change heat storage coating includes a substrate layer and expanded graphite particles, the surface of the expanded graphite particles is provided with a phase-change material, the substrate layer can be made of a resin material, such as any one of acrylic resin, polyurethane resin and epoxy resin, the substrate layer serves as a carrier of the expanded graphite particles and is connected with the inner sidewall of the mounting seat 400, so as to dispose the expanded graphite particles on the inner sidewall of the mounting seat 400, wherein the expanded graphite particles have excellent adsorption performance and can adsorb the phase-change material, in this embodiment, the phase-change material is heated to a molten state, the expanded graphite particles are added and stirred, the phase-change material is adsorbed by the expanded graphite particles, and then dried, so as to obtain the expanded graphite particles with the phase-change material on the surface, phase change material can play the effect of heat absorption heat-retaining, at laser chip 220 during operation, the heat of production passes through mounting groove 401 and transmits to mount pad 400 during, phase change material can absorb the heat, and get up the heat storage, thereby be favorable to further improving this semiconductor laser packaging structure's heat dispersion, additionally, when ambient temperature crosses lowly, the heat that phase change material stored can distribute to in the mounting groove 401, and transmit to in the recess 101, can play certain heat preservation effect to laser chip 220, guarantee the normal work of laser chip 220 in low temperature, thereby improve this semiconductor laser packaging structure's low temperature resistant performance, thereby improve this semiconductor laser packaging structure's durability and life, the finished product quality is high.

As a further preferable scheme, the inner side wall of the mounting seat is provided with a plurality of guide grooves, and the phase-change heat storage coating is partially filled in each guide groove. It can be understood, a plurality of guide ways have been seted up to the inside wall of mount pad, the surface area of the inside wall that can greatly increased mount pad, thereby can greatly increased phase change heat-retaining coating and the area of contact of mount pad inside wall, on the one hand, can improve the cohesion of the inside wall of phase change heat-retaining coating and mount pad, it drops to place phase change heat-retaining coating, be favorable to improving the structural stability of phase change heat-retaining coating, on the other hand, the area of contact increase of phase change heat-retaining coating and mount pad inside wall, the heat transfer effect is better faster.

Referring to fig. 5, in one embodiment, a method for fabricating a semiconductor laser package structure is provided, which includes the following steps:

s110, providing a heat sink, and performing slotting operation on the heat sink to form a groove on the heat sink.

It should be noted that, in this embodiment, the grooving operation is performed on one surface of the heat sink, so that the groove structure is formed on one surface of the heat sink, and the groove structure is formed, so that the ceramic substrate and the laser chip can be accommodated and mounted, and the groove is communicated with the external environment.

And S120, providing a ceramic substrate, and carrying out metallization treatment on one surface of the ceramic substrate to form a conductive plating layer.

It should be noted that, by means of an electroplating process, a plating layer is plated on one surface of the ceramic substrate according to a specific circuit design, so as to obtain a conductive plating layer for mounting a laser chip and realizing circuit communication of the laser chip.

S130, providing a laser chip, carrying out surface treatment on the laser chip, and forming a heat dissipation layer on the surface of the laser chip.

It should be noted that, the heat dissipation layer is arranged on the surface of the laser chip, so that heat generated during the operation of the laser chip can be quickly conducted out, the heat is prevented from being concentrated in the laser chip, and the heat dissipation performance of the semiconductor laser packaging structure can be improved.

In one embodiment, in the operation of performing the surface treatment on the laser chip and forming the heat dissipation layer on the surface of the laser chip, a conductive outer covering bottom layer is plated on the surface of the laser chip, an aluminum silicon carbide layer is plated on the conductive outer covering bottom layer, the edge of the aluminum silicon carbide layer is positioned inside the conductive outer covering bottom layer, an aluminum silicon layer is plated on the surface of the aluminum silicon carbide layer, the edge of the aluminum silicon layer is flush with the edge of the aluminum silicon carbide layer, an aluminum carbon layer is plated on the surface of the aluminum silicon layer, the edge of the aluminum carbon layer is flush with the edge of the aluminum silicon layer, and conductive outer covering top layers are plated on the surfaces of the aluminum carbon layer, the aluminum silicon layer and the aluminum silicon carbide layer, so that the conductive outer covering top layers cover the aluminum carbon layer, the aluminum silicon layer and the aluminum silicon carbide layer and are connected with the conductive outer covering bottom layer, the conductive outer cladding top layer and the conductive outer cladding bottom layer surround a conductive outer cladding layer together. It can be understood that, by plating the conductive outer cladding bottom layer on the surface of the laser chip, and then sequentially plating the aluminum silicon carbide layer, the aluminum silicon layer and the aluminum carbon layer, the aluminum silicon carbide layer, the aluminum silicon layer and the aluminum carbon layer are sequentially stacked from one end close to the laser chip to one end far away from the laser chip, and finally by plating the conductive outer cladding top layer, the conductive outer cladding top layer and the conductive outer cladding bottom layer jointly enclose a conductive outer cladding layer, so as to ensure the circuit conduction on the surface of the laser chip, in this embodiment, the conductive outer cladding layer is an alloy conductive outer cladding layer, for example, the conductive outer cladding layer is a tungsten-copper alloy conductive outer cladding layer, the aluminum silicon carbide layer is close to the laser chip, the thermal conductivity of the aluminum silicon carbide layer is the highest, after the heat generated during the operation of the laser chip is transferred to the aluminum silicon carbide layer through the conductive outer cladding layer, the heat can be rapidly further conducted to the aluminum silicon layer and the aluminum carbon layer, so as to rapidly separate the heat from the laser chip, and the heat is diffused to the external environment or is guided out to the ceramic substrate and transferred to the heat sink for rapid heat dissipation, so that the heat dissipation effect is optimal, the heat dissipation efficiency is highest, and the quality of the semiconductor laser packaging structure can be further improved.

S140, welding the laser chip and the conductive coating, wherein the laser chip is electrically connected with the conductive coating, and then installing the ceramic substrate in the groove.

It should be noted that, the laser chip is fixed on the conductive plating layer by welding, specifically, the conductive plating layer includes a first conductive layer and a second conductive layer, the first conductive layer and the second conductive layer are arranged at intervals and can be respectively used as an anode pad and a cathode pad, that is, the first conductive layer can be used as an anode pad, the second conductive layer can be used as a cathode pad, additionally, the first conductive layer can also be used as a cathode pad, the second conductive layer can be used as an anode pad, the laser chip is arranged on the first conductive layer, and the electrical connection between the laser chip and the second conductive layer is realized by arranging a conductive wire, so as to realize circuit communication, ensure the normal operation of the laser chip, the structure is simple, the installation and the preparation are easy, and then the ceramic substrate is installed on the groove, so as to realize the installation of the laser chip in the groove.

S150, providing a lens, wherein the lens is provided with a light-transmitting cavity, the lens is arranged on one surface of the heat sink, which is provided with the groove, so that the light-transmitting cavity is communicated with the groove, and the lens covers the upper part of the laser chip, so that a semiconductor laser packaging structure is obtained.

It should be noted that, by installing the lens above the groove, light emitted by the semiconductor laser in the groove can be converged, and the light emitting effect is improved, so that a semiconductor laser packaging structure with higher quality is prepared.

the invention is provided with the heat sink and the groove for accommodating and mounting the ceramic substrate and the laser chip, the heat generated by the laser chip during operation can be quickly led out to the external environment through the groove, which is beneficial to improving the heat dissipation performance, the surface of the laser chip is provided with the heat dissipation layer which is beneficial to quickly leading out the heat generated by the laser chip and dissipating the heat to the external environment through the groove, and can also be transmitted to the heat sink through the ceramic substrate, the heat is quickly transmitted to the external environment through the heat sink, the heat dissipation performance of the semiconductor laser packaging structure is further improved, the lens is provided with the light transmission cavity communicated with the groove, the lens is matched with the laser chip in position and covers the laser chip, thereby converging the light emitted by the laser chip, and being beneficial to improving the light emitting effect of the laser chip, therefore, the quality of the finished product of the semiconductor laser packaging structure is improved, the heat dissipation performance of the semiconductor laser packaging structure is good, and the service life of the semiconductor laser packaging structure is prolonged.

It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. A semiconductor laser package structure, comprising:

the heat sink is provided with a groove;

the lens is detachably connected with the heat sink, a light transmitting cavity is formed in the lens, and the light transmitting cavity is communicated with the groove;

the heat sink comprises a groove, a first vent, a second vent, a first vent and a second vent, wherein one end of the heat sink is provided with the first vent, the other end of the heat sink is provided with the second vent, the first vent and the second vent are oppositely arranged, and the first vent and the second vent are respectively communicated with the groove;

the side wall of the groove is provided with a convex block, the ceramic substrate is arranged on one surface of the convex block, which is far away from the heat sink, two ends of the ceramic substrate are respectively provided with a first extending part and a second extending part, the first extending part is detachably connected with one end of the convex block, and the second extending part is detachably connected with the other end of the convex block;

the heat dissipation layer includes inner core layer and electrically conductive surrounding layer, electrically conductive surrounding layer cladding in outside the inner core layer, electrically conductive surrounding layer with laser chip's surface is connected, the inner core layer includes aluminium carbon layer, aluminium silicon layer and aluminium carborundum layer, aluminium carborundum layer aluminium silicon layer reaches the aluminium carbon layer is by being close to laser chip's one end is to keeping away from laser chip's one end is folded in proper order and is established, electrically conductive surrounding layer cladding in aluminium carborundum layer aluminium silicon layer reaches outside the aluminium carbon layer.

2. The semiconductor laser package of claim 1, wherein a copper-gold thermally conductive layer is disposed on a side of the bump away from the heat sink, the copper-gold thermally conductive layer being connected to the ceramic substrate.

3. The semiconductor laser package structure of claim 1, further comprising a mounting base, wherein the mounting base defines a mounting groove, the mounting base is detachably connected to the heat sink, the mounting groove is in communication with the recess, and the lens is connected to an inner sidewall of the mounting groove.

4. The semiconductor laser package structure of claim 1, further comprising a conductive line, wherein the conductive plating layer comprises a first conductive layer and a second conductive layer, the first conductive layer and the second conductive layer are respectively disposed on a surface of the ceramic substrate away from the groove, the first conductive layer and the second conductive layer are disposed at an interval, the laser chip is disposed on the first conductive layer, the laser chip is electrically connected to the first conductive layer, one end of the conductive line is electrically connected to the laser chip, and the other end of the conductive line is electrically connected to the second conductive layer.

5. The semiconductor laser package of any of claims 1-4, further comprising a plurality of heat sinks, each of the heat sinks being disposed on a side of the heat sink remote from the recess, the heat sinks being spaced apart.

6. A preparation method of a semiconductor laser packaging structure is characterized by comprising the following steps:

and providing a lens, wherein the lens is provided with a light-transmitting cavity, and the lens is arranged on one surface of the heat sink provided with the groove, so that the light-transmitting cavity is communicated with the groove, and the lens covers the laser chip to obtain a semiconductor laser packaging structure.